JPH06168904A - Vertical reactor - Google Patents
Vertical reactorInfo
- Publication number
- JPH06168904A JPH06168904A JP34171192A JP34171192A JPH06168904A JP H06168904 A JPH06168904 A JP H06168904A JP 34171192 A JP34171192 A JP 34171192A JP 34171192 A JP34171192 A JP 34171192A JP H06168904 A JPH06168904 A JP H06168904A
- Authority
- JP
- Japan
- Prior art keywords
- boat
- gap
- gas
- rotating
- flange
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体製造装置の１つ
であるＣＶＤ装置、拡散装置等に於ける縦型反応炉に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical reactor in a CVD apparatus, a diffusion apparatus or the like which is one of semiconductor manufacturing apparatuses.
【０００２】[0002]
【従来の技術】半導体製造工程の１つにシリコンウェー
ハの表面に薄膜を生成し、或いは不純物を拡散する工程
がある。2. Description of the Related Art One of semiconductor manufacturing processes is a process of forming a thin film on the surface of a silicon wafer or diffusing impurities.
【０００３】これは、ウェーハを反応炉内に装入し、反
応炉内を高温に維持し、更に炉内に反応ガスを導入して
シリコンウェーハの表面に薄膜を生成し、或いは不純物
を拡散する。In this method, a wafer is loaded into a reaction furnace, the inside of the reaction furnace is maintained at a high temperature, and a reaction gas is further introduced into the furnace to form a thin film on the surface of a silicon wafer or diffuse impurities. .
【０００４】図３に於いて、従来の縦型反応管について
説明する。A conventional vertical reaction tube will be described with reference to FIG.
【０００５】図中、１は鉛直な軸心を有する反応管であ
り、２は該反応管１の周囲を覆うヒータユニットであ
る。該ヒータユニット２と前記反応管１との間には、均
熱管３が設けられている。前記反応管１に、シリコンウ
ェーハ４が多段に装填されたボート５が下方より装入さ
れる様になっており、該ボート５はボートキャップ６を
介してボート受台７に載置される様になっている。In the figure, 1 is a reaction tube having a vertical axis, and 2 is a heater unit that covers the periphery of the reaction tube 1. A soaking tube 3 is provided between the heater unit 2 and the reaction tube 1. A boat 5 loaded with silicon wafers 4 in multiple stages is loaded into the reaction tube 1 from below, and the boat 5 is mounted on a boat cradle 7 via a boat cap 6. It has become.
【０００６】該ボート受台７はボートエレベータ（図示
せず）によって昇降自在に支持されると共に前記反応管
１下面炉口部を気密に閉塞する炉口フランジ８を有して
いる。更に、ボート受台７はボート回転機構９を具備
し、該ボート回転機構９は前記ボートキャップ６を介し
て前記ボート５を鉛直軸心を中心に所要の速度で回転さ
せ得る様になっている。The boat pedestal 7 is supported by a boat elevator (not shown) so as to be able to move up and down, and has a furnace port flange 8 that hermetically closes the furnace port portion on the lower surface of the reaction tube 1. Further, the boat pedestal 7 is provided with a boat rotating mechanism 9, which can rotate the boat 5 about the vertical axis via the boat cap 6 at a required speed. .
【０００７】シリコンウェーハ４の処理は前記ヒータユ
ニット２により反応管１内を所定温度に加熱した状態
で、シリコンウェーハ４を装填したボート５を反応管１
内に装入し、前記炉口フランジ８により炉口部を閉塞
し、更に前記反応管１内に反応ガスを導入排出すること
で、シリコンウェーハ４表面に薄膜を生成する。For the processing of the silicon wafer 4, the boat 5 loaded with the silicon wafer 4 is placed in the reaction tube 1 while the inside of the reaction tube 1 is heated to a predetermined temperature by the heater unit 2.
A thin film is formed on the surface of the silicon wafer 4 by charging the inside of the reactor, closing the furnace opening by the furnace flange 8 and introducing and discharging the reaction gas into the reaction tube 1.
【０００８】前記した様に、ボート５は前記ボート受台
７により反応管１内で回転される様になっているが、こ
れは反応ガスの流れに起因する膜厚の不均一が生じない
様にするものである。As described above, the boat 5 is adapted to be rotated in the reaction tube 1 by the boat pedestal 7, but this does not cause unevenness of the film thickness due to the flow of the reaction gas. It is something to do.
【０００９】図４に於いて、従来の縦型反応炉のボート
回転機構９について詳述する。Referring to FIG. 4, the boat rotating mechanism 9 of the conventional vertical reactor will be described in detail.
【００１０】図示しないボートエレベータ昇降台にギア
ケース１０が固着され、該ギアケース１０に軸受ハウジ
ング１１が固着されている。該軸受ハウジング１１に軸
受１２を介して下部回転軸１３が回転自在に設けられ、
該下部回転軸１３の下端部は前記ギアケース１０内部に
露出し、該下端部にウォームホイール１４が嵌着され、
又前記ギアケース１０に回転自在に設けられたウォーム
１５が前記ウォームホイール１４に嵌合し、該ウォーム
１５の回転軸１６は図示しないボート回転モータに連結
されている。A gear case 10 is fixed to a boat elevator lift (not shown), and a bearing housing 11 is fixed to the gear case 10. A lower rotary shaft 13 is rotatably provided in the bearing housing 11 via a bearing 12,
A lower end of the lower rotary shaft 13 is exposed inside the gear case 10, and a worm wheel 14 is fitted to the lower end.
A worm 15 rotatably provided on the gear case 10 is fitted to the worm wheel 14, and a rotation shaft 16 of the worm 15 is connected to a boat rotation motor (not shown).
【００１１】前記軸受ハウジング１１の上端には、ベー
スフランジ１７が固着され、該ベースフランジ１７の上
面に前記炉口フランジ８が固着される。A base flange 17 is fixed to the upper end of the bearing housing 11, and the furnace port flange 8 is fixed to the upper surface of the base flange 17.
【００１２】前記反応管１下端に形成された反応管フラ
ンジ１ａに対峙する前記炉口フランジ８の部分に、炉口
シール１８を設け、該炉口シール１８が前記反応管フラ
ンジ１ａに密着して炉口部を気密に閉塞する。又、該反
応管フランジ１ａはフランジ押え１９によってベース２
０に固定され、該フランジ押え１９には前記炉口シール
１８を冷却する為の冷却水路２１が形成されている。
又、前記ベースフランジ１７にも前記炉口シール１８の
位置に対応して冷却水路２２が形成されている。A furnace opening seal 18 is provided at a portion of the furnace opening flange 8 facing the reaction tube flange 1a formed at the lower end of the reaction tube 1, and the furnace opening seal 18 is closely attached to the reaction tube flange 1a. The furnace mouth is closed airtightly. Further, the reaction tube flange 1a is attached to the base 2 by the flange retainer 19.
The flange retainer 19 is fixed at 0, and a cooling water passage 21 for cooling the furnace port seal 18 is formed.
Further, the base flange 17 is also formed with a cooling water passage 22 corresponding to the position of the furnace port seal 18.
【００１３】前記ベースフランジ１７、炉口フランジ８
を貫通する上部回転軸２３が前記下部回転軸１３に同心
に設けられ、該上部回転軸２３の上端部に回転フランジ
２４が嵌着され、該回転フランジ２４に前記ボートキャ
ップ６が乗置固定されている。該ボートキャップ６の下
面周辺部、及び該下面周辺部に対峙する前記炉口フラン
ジ８の部分には相互に遊嵌する凹凸部が形成され、これ
ら凹凸部によって気体シール部２５が形成される。The base flange 17 and the furnace port flange 8
An upper rotary shaft 23 penetrating through is provided concentrically with the lower rotary shaft 13, a rotary flange 24 is fitted to an upper end portion of the upper rotary shaft 23, and the boat cap 6 is mounted and fixed on the rotary flange 24. ing. Concavo-convex portions that are loosely fitted to each other are formed in the peripheral portion of the lower surface of the boat cap 6 and the portion of the furnace port flange 8 that faces the peripheral portion of the lower surface.
【００１４】而して、前記ボートキャップ６と前記炉口
フランジ８との間、前記回転フランジ２４と前記炉口フ
ランジ８との間には、僅かな間隙が形成され、ボートキ
ャップ６が回転するに支障ない様になっている。Thus, a slight gap is formed between the boat cap 6 and the furnace port flange 8 and between the rotary flange 24 and the furnace port flange 8 to rotate the boat cap 6. It doesn't hurt.
【００１５】次に、前記ボートキャップ６を介して前記
ボート５を回転させる場合、図示しないボート回転モー
タにより前記回転軸１６を介して前記ウォーム１５を回
転させ、該ウォーム１５によって前記ウォームホイール
１４が回転され、更に下部回転軸１３、上部回転軸２３
を介して前記ボート５が回転される。Next, when the boat 5 is rotated through the boat cap 6, the worm 15 is rotated through the rotation shaft 16 by a boat rotation motor (not shown), and the worm wheel 14 is moved by the worm 15. Rotated, further lower rotary shaft 13, upper rotary shaft 23
The boat 5 is rotated via the.
【００１６】[0016]
【発明が解決しようとする課題】前記した様に、ボート
５を回転させる為、ボートキャップ６と前記炉口フラン
ジ８との間、前記回転フランジ２４と前記炉口フランジ
８との間には、僅かな間隙が必要となるが、前記した様
に反応管１内には反応ガスを導入するので、前記間隙に
反応ガス或いは排気すべき高温のガスが浸入してしま
う。この為、前記間隙に反応生成物が付着し、該反応生
成物の為に回転部と固定部が固着し、回転が不能とな
り、更にはボートキャップ６と炉口フランジ８との分解
ができなくなってしまう。或いは、高温のガスが浸入す
ることで前記上部回転軸２３周りのシール部が焼損する
という問題があった。As described above, in order to rotate the boat 5, between the boat cap 6 and the furnace port flange 8 and between the rotary flange 24 and the furnace port flange 8, Although a small gap is required, the reaction gas is introduced into the reaction tube 1 as described above, so that the reaction gas or the high-temperature gas to be exhausted enters the gap. Therefore, the reaction product adheres to the gap, the rotating part and the fixed part are fixed due to the reaction product, the rotation becomes impossible, and further, the boat cap 6 and the furnace port flange 8 cannot be disassembled. Will end up. Alternatively, there is a problem that the seal portion around the upper rotary shaft 23 is burned out due to the intrusion of high-temperature gas.
【００１７】従来、早め早めにメンテナンスを行って前
記間隙の清浄、シール部材の交換を行い、斯かる不具合
が発生することを防止しているが、その為メンテナンス
サイクルが短周期となり、装置の稼働率の低下と共に、
メンテナンスコストが増大していた。Conventionally, maintenance is performed early and early to clean the gap and replace the seal member to prevent the occurrence of such a problem. However, the maintenance cycle becomes short and the operation of the apparatus is reduced. As the rate declines,
Maintenance costs were increasing.
【００１８】本発明は斯かる実情に鑑み、縦型反応炉の
ボート回転部と固定部間の間隙に反応生成物が付着する
ことを防止すると共に高温ガスによるシール部の焼損を
防止しようとするものである。In view of the above situation, the present invention aims to prevent the reaction products from adhering to the gap between the rotating part of the boat and the fixed part of the vertical reactor, and to prevent the seal part from being burnt out due to the high temperature gas. It is a thing.
【００１９】[0019]
【課題を解決するための手段】本発明は、立設された反
応管と、該反応管の周囲を覆うヒータユニットと、シリ
コンウェーハを多段に保持するボートと、該ボートを受
載すると共に該ボートを回転可能なボート受台とを有す
る縦型反応炉に於いて、前記ボート回転部と固定部との
間に形成される間隙に非酸化性ガスを導入する様にした
ことを特徴とするものである。DISCLOSURE OF THE INVENTION The present invention provides a standing reaction tube, a heater unit for covering the circumference of the reaction tube, a boat for holding silicon wafers in multiple stages, a boat for receiving the boat, In a vertical reactor having a boat pedestal capable of rotating a boat, a non-oxidizing gas is introduced into a gap formed between the boat rotating part and a fixed part. It is a thing.
【００２０】[0020]
【作用】回転部と固定部との間に形成される間隙に、非
酸化性ガスを導入することで間隙が非酸化性ガスで充満
され、該間隙に反応ガスが侵入することが抑止され、該
間隙に反応生成物が付着することが防止され、更に前記
間隙に高温のガスが浸入することが抑止され、回転部と
固定部との間に設けられたシール部材の焼損が防止され
る。The non-oxidizing gas is introduced into the gap formed between the rotating part and the fixed part so that the gap is filled with the non-oxidizing gas and the reaction gas is prevented from entering the gap. It is possible to prevent the reaction product from adhering to the gap, prevent the high temperature gas from entering the gap, and prevent the seal member provided between the rotating portion and the fixed portion from being burnt.
【００２１】[0021]
【実施例】以下、図面を参照しつつ本発明の一実施例を
説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００２２】尚、図１中、図４中で示したものと同一の
ものには同符号を付し、その説明を省略する。In FIG. 1, the same parts as those shown in FIG. 4 are designated by the same reference numerals, and the description thereof will be omitted.
【００２３】上部回転軸２３の中心部に下端側から導引
路３１を穿設し、その上端が炉口フランジ８とベースフ
ランジ１７の境界部に達する様にし、前記導引路３１と
炉口フランジ８とベースフランジ１７とがなす間隙３０
とを連通する連絡路３２を穿設する。前記導引路３１の
下端には非酸化性ガス導入管３３を接続し、該非酸化性
ガス導入管３３を窒素ガス源に接続する。A guide passage 31 is formed at the center of the upper rotary shaft 23 from the lower end side so that its upper end reaches the boundary between the furnace port flange 8 and the base flange 17, and the guide passage 31 and the furnace port are provided. Gap 30 formed by the flange 8 and the base flange 17
A communication path 32 communicating with and is provided. A non-oxidizing gas introducing pipe 33 is connected to the lower end of the guiding passage 31, and the non-oxidizing gas introducing pipe 33 is connected to a nitrogen gas source.
【００２４】而して、前記非酸化性ガス導入管３３より
前記導引路３１を経て前記間隙３０に窒素ガスを導入
し、間隙３０を窒素ガスで充満させ、更に該間隙３０が
反応管１内に対して陽圧となる様にする。Then, nitrogen gas is introduced into the gap 30 from the non-oxidizing gas introduction pipe 33 through the guide passage 31 to fill the gap 30 with nitrogen gas, and the gap 30 is further filled with the reaction pipe 1. Make a positive pressure against the inside.
【００２５】該間隙３０を窒素ガスにより陽圧とする
と、該間隙３０に反応ガスが浸入するのが防止され、間
隙に反応生成物が付着するのを防止する。更に高温ガス
の浸入も防止され、高温ガスによるシール部材の焼損も
防止される。従って、前記間隙３０の清浄、シール部材
の交換間隔が長くでき、装置の稼働率が向上し、又メン
テナンスコストが低下する。When the gap 30 is made to have a positive pressure by nitrogen gas, the reaction gas is prevented from entering the gap 30 and the reaction product is prevented from adhering to the gap. Further, invasion of high temperature gas is prevented, and burning of the seal member due to high temperature gas is also prevented. Therefore, the clearance of the gap 30 and the replacement interval of the seal member can be lengthened, the operating rate of the apparatus is improved, and the maintenance cost is reduced.
【００２６】次に、図２は他の実施例を示すものであ
り、該実施例ではベースフランジ１７に貫通する導引路
３４を穿設し、該導引路３４を前記間隙３０に連通さ
せ、該導引路３４に非酸化性ガス導入管３５を接続す
る。而して、該非酸化性ガス導入管３５、前記導引路３
４を経て前記間隙３０に窒素ガスを導入し、間隙３０を
前述の実施例と同様窒素ガスで陽圧にする。Next, FIG. 2 shows another embodiment. In this embodiment, a guide path 34 penetrating the base flange 17 is bored, and the guide path 34 is communicated with the gap 30. A non-oxidizing gas introducing pipe 35 is connected to the guide passage 34. Thus, the non-oxidizing gas introducing pipe 35 and the guide passage 3
Nitrogen gas is introduced into the gap 30 via 4 and the gap 30 is made to have a positive pressure with nitrogen gas as in the above-described embodiment.
【００２７】尚、上記した実施例では非酸化性ガスとし
て窒素ガスを使用したが、ヘリウムガス、アルゴンガス
等の不活性ガスを使用してもよい。Although nitrogen gas was used as the non-oxidizing gas in the above-mentioned embodiments, an inert gas such as helium gas or argon gas may be used.
【００２８】[0028]
【発明の効果】以上述べた如く本発明によれば、ボート
回転方式の縦型反応炉に於いてボート回転部と固定部と
の間隙に反応生成物が付着することが防止されると共に
高温のガスが浸入するのが防止され、シール部材の焼損
が防止されるので、メンテナンス間隔が長くなり、装置
の稼働率が向上すると共にメンテナンスコストの低減が
図れる。As described above, according to the present invention, it is possible to prevent the reaction product from adhering to the gap between the rotating portion of the boat and the fixed portion in the vertical reactor of the boat rotating system, and to prevent the high temperature. Since gas is prevented from entering and the seal member is prevented from being burnt out, the maintenance interval is extended, the operating rate of the apparatus is improved, and the maintenance cost is reduced.
【図１】本発明の一実施例の要部を示す断面図である。FIG. 1 is a sectional view showing a main part of an embodiment of the present invention.
【図２】本発明の他の実施例の要部を示す断面図であ
る。FIG. 2 is a cross-sectional view showing the main parts of another embodiment of the present invention.
【図３】従来の縦型反応炉の断面図である。FIG. 3 is a cross-sectional view of a conventional vertical reactor.
【図４】従来例の要部を示す断面図である。FIG. 4 is a cross-sectional view showing a main part of a conventional example.
１ 反応管 ２ ヒータユニット ４ シリコンウェーハ ５ ボート ６ ボートキャップ ７ ボート受台 ８ 炉口フランジ ９ ボート回転機構 １３ 下部回転軸 １７ ベースフランジ ２３ 上部回転軸 ２４ 回転フランジ ３１ 導引路 ３４ 導引路 1 Reaction Tube 2 Heater Unit 4 Silicon Wafer 5 Boat 6 Boat Cap 7 Boat Cradle 8 Furnace Flange 9 Boat Rotating Mechanism 13 Lower Rotating Shaft 17 Base Flange 23 Upper Rotating Shaft 24 Rotating Flange 31 Guideway 34 Guideway
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小池 秀樹 東京都港区虎ノ門二丁目３番13号 国際電 気株式会社内 (72)発明者 狩野 利一 東京都港区虎ノ門二丁目３番13号 国際電 気株式会社内 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Hideki Koike 2-3-13 Toranomon, Minato-ku, Tokyo Kokusai Electric Co., Ltd. (72) Inventor Riichi Kano 2-3-13 Toranomon, Minato-ku, Tokyo International Electric Co., Ltd.
Claims (2)
覆うヒータユニットと、シリコンウェーハを多段に保持
するボートと、該ボートを受載すると共に該ボートを回
転可能なボート受台とを有する縦型反応炉に於いて、前
記ボート回転部と固定部との間に形成される間隙に非酸
化性ガスを導入する様にしたことを特徴とする縦型反応
炉。1. A standing reaction tube, a heater unit that covers the periphery of the reaction tube, a boat that holds silicon wafers in multiple stages, a boat pedestal that can carry the boat and rotate the boat. A vertical reaction furnace having: a non-oxidizing gas introduced into a gap formed between the boat rotating part and the fixed part.
し、該導引路よりボート回転部と固定部との間に形成さ
れる間隙に非酸化性ガスを導入する様にした請求項１の
縦型反応炉。2. A guide passage is bored in a shaft for rotating a boat, and a non-oxidizing gas is introduced into the gap formed between the boat rotating portion and the fixed portion through the guide passage. Item 1. The vertical reactor of item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34171192A JP3253384B2 (en) | 1992-11-27 | 1992-11-27 | Vertical reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34171192A JP3253384B2 (en) | 1992-11-27 | 1992-11-27 | Vertical reactor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06168904A true JPH06168904A (en) | 1994-06-14 |
| JP3253384B2 JP3253384B2 (en) | 2002-02-04 |
Family
ID=18348191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34171192A Expired - Lifetime JP3253384B2 (en) | 1992-11-27 | 1992-11-27 | Vertical reactor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3253384B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0992627A (en) * | 1995-09-26 | 1997-04-04 | Kokusai Electric Co Ltd | Method for purging rotary shaft seal of semiconductor manufacturing device |
| US6030457A (en) * | 1997-05-20 | 2000-02-29 | Tokyo Electron Limited | Substrate processing apparatus |
| US6235121B1 (en) * | 1999-01-26 | 2001-05-22 | Tokyo Electron Limited | Vertical thermal treatment apparatus |
| WO2003085710A1 (en) * | 2002-04-09 | 2003-10-16 | Tokyo Electron Limited | Vertical heat treating equipment |
| JP2007027772A (en) * | 2006-08-25 | 2007-02-01 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing equipment |
| US8591657B2 (en) | 2008-08-29 | 2013-11-26 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
-
1992
- 1992-11-27 JP JP34171192A patent/JP3253384B2/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0992627A (en) * | 1995-09-26 | 1997-04-04 | Kokusai Electric Co Ltd | Method for purging rotary shaft seal of semiconductor manufacturing device |
| US6030457A (en) * | 1997-05-20 | 2000-02-29 | Tokyo Electron Limited | Substrate processing apparatus |
| US6235121B1 (en) * | 1999-01-26 | 2001-05-22 | Tokyo Electron Limited | Vertical thermal treatment apparatus |
| WO2003085710A1 (en) * | 2002-04-09 | 2003-10-16 | Tokyo Electron Limited | Vertical heat treating equipment |
| US6957956B2 (en) | 2002-04-09 | 2005-10-25 | Tokyo Electron Limited | Vertical heat treating equipment |
| CN100338735C (en) * | 2002-04-09 | 2007-09-19 | 东京毅力科创株式会社 | Vertical heat treating equipment |
| JP2007027772A (en) * | 2006-08-25 | 2007-02-01 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing equipment |
| US8591657B2 (en) | 2008-08-29 | 2013-11-26 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3253384B2 (en) | 2002-02-04 |
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