JPH06151308A - Evaporation equipment - Google Patents
Evaporation equipmentInfo
- Publication number
- JPH06151308A JPH06151308A JP29184992A JP29184992A JPH06151308A JP H06151308 A JPH06151308 A JP H06151308A JP 29184992 A JP29184992 A JP 29184992A JP 29184992 A JP29184992 A JP 29184992A JP H06151308 A JPH06151308 A JP H06151308A
- Authority
- JP
- Japan
- Prior art keywords
- fixing plate
- substrate
- vapor deposition
- light
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基板上に所望の物質の
蒸着膜を形成する蒸着装置に係わり、特に基板を加熱し
ながら蒸着するのに適した蒸着装置の改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor deposition apparatus for forming a vapor deposition film of a desired substance on a substrate, and more particularly to improvement of the vapor deposition apparatus suitable for vapor deposition while heating the substrate.
【０００２】[0002]
【従来の技術】従来の蒸着装置は一般に真空容器内に蒸
発源と基板とを互いに所定距離離して配置し、蒸着物質
を加熱蒸発させて基板上に蒸着し、所望の物質の蒸着膜
を形成するように構成されている。2. Description of the Related Art In a conventional vapor deposition apparatus, an evaporation source and a substrate are generally arranged in a vacuum container at a predetermined distance from each other, and a vapor deposition substance is heated and vaporized to deposit on a substrate to form a vapor deposition film of a desired substance. Is configured to.
【０００３】ところで、このような蒸着においては、基
板を加熱しながら蒸着を行う加熱蒸着がしばしば行われ
る。第２図に上記のような加熱蒸着ができる従来の蒸着
装置の構成例を断面図で示す。図において、１０１は真
空容合、１０２はるつぼで、るつぼ中には蒸着物質１０
２ａが収納されている。また、１０３はるつぼ加熱用の
フィラメント、１０４はフィラメント加熱用電源、１０
５は基板加熱用のヒータ（通常ハロゲンランプが用いら
れる）、１０６はヒータ加熱用電源、１０７は基板固定
板、１０８は基板である。By the way, in such vapor deposition, heating vapor deposition is often performed in which vapor deposition is performed while heating the substrate. FIG. 2 is a sectional view showing an example of the configuration of a conventional vapor deposition apparatus capable of performing the above-described vapor deposition. In the figure, 101 is a vacuum fit, 102 is a crucible, and the evaporation material 10 is contained in the crucible.
2a is stored. Further, 103 is a filament for heating the crucible, 104 is a power source for heating the filament, 10
Reference numeral 5 is a heater for heating the substrate (usually a halogen lamp is used), 106 is a power source for heating the heater, 107 is a substrate fixing plate, and 108 is a substrate.
【０００４】蒸着膜を形成する際には第２図に示す構成
の装置を使用し、所望の蒸着物質１０２ａをるつぼ１０
２に入れ、真空容器１０１内を高真空状態に減圧する。
次に基板加熱用ヒータ１０５をヒータ加熱用電源１０６
で加熱し、ヒータ１０５の輻射熱で基板１０８を所定の
温度に加熱する。次にるつぼ加熱用のフィラメント１０
３をフィラメント加熱用電源１０４により加熱し、蒸着
物質１０２ａが溶融し蒸気となり、これが基板１０８上
に衝突、付着して基板１０８上に蒸着膜が形成される。When forming a vapor deposition film, the apparatus having the configuration shown in FIG. 2 is used to deposit a desired vapor deposition material 102a on the crucible 10.
Then, the inside of the vacuum container 101 is depressurized to a high vacuum state.
Next, the substrate heating heater 105 is connected to the heater heating power source 106.
The substrate 108 is heated to a predetermined temperature by the radiant heat of the heater 105. Next, the filament 10 for heating the crucible
3 is heated by the filament heating power source 104, the vapor deposition substance 102a is melted and becomes vapor, which collides and adheres to the substrate 108 to form a vapor deposition film on the substrate 108.
【０００５】[0005]
【発明が解決しようとする課題】第２図に示す従来例の
蒸着装置では、加熱蒸着を行う際、基板加熱用フィラメ
ントヒータ１０５にヒータ加熱用電源１０６で電流を流
し、その輻射熱で基板１０８加熱する。しかしながら、
この方法では真空容器１０１内全体が加熱されてしまう
ため、高真空状態に減圧後の真空容器１０１の壁面から
吸着分子が再放出された不純物が取り込まれ、例えば電
極配線用蒸着の場合は配線抵抗率が高くなったり、耐エ
レクトロマイグレーション性が低下するなどの問題があ
った。In the conventional vapor deposition apparatus shown in FIG. 2, when heating vapor deposition, an electric current is supplied to the substrate heating filament heater 105 by the heater heating power source 106, and the radiant heat heats the substrate 108. To do. However,
In this method, since the entire interior of the vacuum container 101 is heated, impurities from which the adsorbed molecules are re-released are taken in from the wall surface of the vacuum container 101 after depressurization to a high vacuum state. For example, in the case of vapor deposition for electrode wiring, wiring resistance There are problems such as a high rate and a decrease in electromigration resistance.
【０００６】本発明はこの問題を解消し、加熱蒸着を行
う際に不純物の取り込み量の少ない優れた蒸質の蒸着膜
を得ることを可能とする蒸着装置を提供することを目的
とする。An object of the present invention is to solve this problem and to provide a vapor deposition apparatus which makes it possible to obtain a vapor-deposited film of excellent vapor quality in which the amount of impurities taken in is small when performing heating vapor deposition.
【０００７】[0007]
【課題を解決するための手段】本発明に係る蒸着装置
は、気密容器と、前記気密容器内に配置された蒸着源
と、前記蒸着源の加熱手段と、光吸収性材でなり基板の
被蒸着主面を前記蒸着源に対向させ、かつ前記主面の反
対側主面に接して基板を支持固定する基板固定板と、光
の反射率が高くまたは吸収率が低い材質でなり前記基板
固定板の周縁部に断熱材を介して接しこれを保持する固
定板保持部材と、前記基板固定板に対し基板が接する主
面と反対の主面側に設けられて前記基板固定板を加熱す
る加熱光源とを具備したことを特徴とする。A vapor deposition apparatus according to the present invention includes an airtight container, a vapor deposition source arranged in the airtight container, a heating means for the vapor deposition source, and a substrate made of a light absorbing material. A substrate fixing plate that has a vapor deposition main surface facing the vapor deposition source and supports and fixes the substrate by contacting the main surface opposite to the main surface, and a substrate fixing plate made of a material having a high light reflectance or a low absorptivity. A fixing plate holding member which is in contact with the peripheral portion of the plate via a heat insulating material and holds it, and heating for heating the substrate fixing plate which is provided on the main surface side opposite to the main surface where the substrate contacts the substrate fixing plate. And a light source.
【０００８】[0008]
【作用】本発明による蒸着装置は、光を吸収する材質で
構成される基板固定板と、光を反射または吸収しにくい
材質で構成される該基板固定板を保持する固定板保持部
材と、該基板固定板を加熱するための光源とを具備して
いる。加熱用の光源により基板固定板は加熱され、この
固定板に密着して配置される基板も加熱される。一方、
固定板保持部材は光を反射するためほとんど加熱されな
い。このため真空容器内において、加熱される箇所が基
板固定板及び基板周辺部のみに限定され、真空容器壁面
等から吸着分子が脱離することにより真空度の低下を最
小限に少なくすることができる。この結果、不純物の取
り込み量の少ない良質の蒸着膜を得ることが可能とな
る。The vapor deposition apparatus according to the present invention includes a substrate fixing plate made of a material that absorbs light, a fixing plate holding member that holds the substrate fixing plate made of a material that hardly reflects or absorbs light, And a light source for heating the substrate fixing plate. The substrate fixing plate is heated by the heating light source, and the substrate placed in close contact with the fixing plate is also heated. on the other hand,
Since the fixing plate holding member reflects light, it is hardly heated. Therefore, in the vacuum container, the heated portion is limited to only the substrate fixing plate and the peripheral portion of the substrate, and the desorption of adsorbed molecules from the wall surface of the vacuum container can minimize the decrease in the degree of vacuum. . As a result, it becomes possible to obtain a good quality vapor deposition film with a small amount of impurities taken in.
【０００９】[0009]
【実施例】以下、本発明の実施例について第１図を参照
して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described below with reference to FIG.
【００１０】第１図に本発明に係る蒸着装置を断面図で
示す。なお、図中において従来例の説明における第２図
の部分と変わらない部分は同じ符号を付けて示し説明を
省略する。FIG. 1 is a sectional view showing a vapor deposition apparatus according to the present invention. In the figure, the same parts as those of FIG. 2 in the description of the conventional example are designated by the same reference numerals and the description thereof will be omitted.
【００１１】図において、１０１は真空容器、１０２は
るつぼ、１０２ａは蒸着物質、１０３はるつぼ加熱用の
フィラメント、１０４はフィラメント加熱用電源、であ
る。被蒸着基板１０８は光を吸収する材質でできた基板
固定板１７（本実施例では光源に面する面をグラファイ
トでコーティングしたステンレスを用いている）に固定
され、さらに基板固定板７は断熱材１３を介し、たとえ
ば石英基板の片面にＡｌ蒸着膜を被覆した保持板１２に
より真空容器１０１内に固定されている。また、加熱用
の光源１０は基板固定板１７を挟んで、蒸発源であるる
つぼ１０３と反対側に配置されている。１１は光源用電
源である。上記のように構成された本実施例の蒸着装置
においては、従来装置と同様に、蒸着材質１０２ａとし
てたとえばＡｌをるつぼ１０２内に入れ、真空容器１０
１を高真空状態に減圧する。次に基板を加熱するため
に、光源用電源１１により光源１０から光を発生させ
る。保持板１２は鏡面加工してあり、光を反射するため
加熱されることはない。一方、基板固定板１７はグラフ
ァイトコーティングしてあるため光を吸収し、加熱され
る。この際、加熱されるのは基板固定板１７だけであ
り、被蒸着基板１０８の底面のみに基板固定板１７を配
置することで、従来例のように真空容器１０１全体が加
熱されることはない。したがって真空容器１０１の壁面
からの吸着物質の再放出がほとんどないため真空度の低
下も少ない。このため、蒸着膜中に不純物が取り込ま
れ、膜質が低下することがない。In the figure, 101 is a vacuum vessel, 102 is a crucible, 102a is a vapor deposition material, 103 is a filament for heating the crucible, and 104 is a power source for heating the filament. The deposition target substrate 108 is fixed to a substrate fixing plate 17 made of a light absorbing material (in this embodiment, a surface facing the light source is made of stainless steel coated with graphite), and the substrate fixing plate 7 is a heat insulating material. It is fixed in the vacuum container 101 via a holding plate 12 having a surface of a quartz substrate coated with an Al vapor deposition film, for example. Further, the light source 10 for heating is arranged on the opposite side of the crucible 103, which is an evaporation source, with the substrate fixing plate 17 interposed therebetween. Reference numeral 11 is a light source power source. In the vapor deposition apparatus of the present embodiment configured as described above, similar to the conventional apparatus, for example, Al as the vapor deposition material 102a is put in the crucible 102, and the vacuum container 10 is placed.
Depressurize 1 to high vacuum. Next, in order to heat the substrate, the light source 11 generates light from the light source 10. Since the holding plate 12 is mirror-finished and reflects light, it is not heated. On the other hand, since the substrate fixing plate 17 is coated with graphite, it absorbs light and is heated. At this time, only the substrate fixing plate 17 is heated, and by disposing the substrate fixing plate 17 only on the bottom surface of the deposition target substrate 108, the entire vacuum container 101 is not heated unlike the conventional example. . Therefore, since the adsorbed substance is hardly re-released from the wall surface of the vacuum container 101, the degree of vacuum is not significantly lowered. Therefore, impurities are not taken into the deposited film and the film quality does not deteriorate.
【００１２】なお上記実施例では、蒸着物質の加熱方式
として低抗加熱型を例示したが、本発明は何らこれに拘
束されるものではなく、例えば電子ビームにより蒸着物
質を溶融せしめる型の装置についても本発明が使用でき
ることは上述の説明から明らかである。また、上記実施
例においては、保持板１２が固定されている場合につい
て説明したが、保持板１２、あるいは、基板固定板１７
を各々公転、自転させる機構を付加することも、加熱用
光源１０と保持板１２あるいは基板固定板１７とが非接
触であるため容易である。In the above embodiment, the low resistance heating type is exemplified as the heating method of the vapor deposition material, but the present invention is not limited to this, for example, an apparatus of a type in which the vapor deposition material is melted by an electron beam. It is clear from the above description that the present invention can also be used. Further, although the case where the holding plate 12 is fixed has been described in the above embodiment, the holding plate 12 or the substrate fixing plate 17 is used.
It is also easy to add a mechanism for orbiting and revolving respectively, because the heating light source 10 is not in contact with the holding plate 12 or the substrate fixing plate 17.
【００１３】また、上記実施例では光を吸収しやすい材
質としてグラファイトでコーティングしたステンレスを
例示したが、何らこれに限定されるものではなく光を吸
収しやすい材質であればよく、また光を反射または吸収
しにくい材質についても上記Ａｌを蒸着した石英板に限
定されるものではない。Further, in the above embodiment, stainless steel coated with graphite is illustrated as a material that easily absorbs light, but the material is not limited to this, and any material that easily absorbs light and that reflects light can be used. Also, the material that is difficult to absorb is not limited to the above quartz plate on which Al is deposited.
【００１４】[0014]
【発明の効果】以上説明したように本発明によれば、従
来の薄膜蒸着装置では避けることが困難であった加熱蒸
着時の真空度の低下を少なくできるため、不純物の少な
い良質の蒸着膜を形成することができる。As described above, according to the present invention, it is possible to reduce a decrease in vacuum degree during heating vapor deposition, which is difficult to avoid by a conventional thin film vapor deposition apparatus. Can be formed.
【図１】本発明に係る蒸着装置の一実施例の構成を示す
断面図。FIG. 1 is a sectional view showing the configuration of an embodiment of a vapor deposition device according to the present invention.
【図２】従来の蒸着装置の構成を示す断面図。FIG. 2 is a cross-sectional view showing the configuration of a conventional vapor deposition device.
１０ 加熱用の光源 １１ 光源用電源 １２ 基板保持部材 １３ 断熱材 １７ 基板固定板 １０１ 真空容器 １０２ るつぼ １０３ るつぼ加熱用フィラメント １０４ フィラメント加熱用電源 １０８ 基板 10 heating light source 11 light source power supply 12 substrate holding member 13 heat insulating material 17 substrate fixing plate 101 vacuum container 102 crucible 103 crucible heating filament 104 filament heating power supply 108 substrate
Claims (1)
た蒸着源と、前記蒸着源の加熱手段と、光吸収性材でな
り基板をその被蒸着主面が前記蒸着源に対向するよう
に、かつ前記主面の反対側主面に接して支持固定する基
板固定板と、光の反射率が高くまたは吸収率が低い材質
でなり前記基板固定板の周縁部に断熱材を介して接しこ
れを保持する固定板保持板と、前記基板固定板に対し基
板が接する主面と反対の主面側に設けられて前記基板固
定板を加熱する加熱光源とを具備した蒸着装置。1. An airtight container, a vapor deposition source arranged in the airtight container, a heating means of the vapor deposition source, and a substrate made of a light absorbing material so that its main surface to be vapor-deposited faces the vapor deposition source. And a substrate fixing plate that is supported and fixed in contact with the main surface on the side opposite to the main surface, and is made of a material having a high light reflectance or a low absorptivity and is in contact with the peripheral portion of the substrate fixing plate via a heat insulating material. A vapor deposition apparatus comprising: a fixing plate holding plate for holding the plate; and a heating light source provided on a main surface side opposite to a main surface of the substrate fixing plate in contact with the substrate to heat the substrate fixing plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29184992A JPH06151308A (en) | 1992-10-30 | 1992-10-30 | Evaporation equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29184992A JPH06151308A (en) | 1992-10-30 | 1992-10-30 | Evaporation equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06151308A true JPH06151308A (en) | 1994-05-31 |
Family
ID=17774218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29184992A Pending JPH06151308A (en) | 1992-10-30 | 1992-10-30 | Evaporation equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06151308A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007335098A (en) * | 2006-06-12 | 2007-12-27 | Koito Mfg Co Ltd | Colored mirror, and method for manufacturing colored mirror |
-
1992
- 1992-10-30 JP JP29184992A patent/JPH06151308A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007335098A (en) * | 2006-06-12 | 2007-12-27 | Koito Mfg Co Ltd | Colored mirror, and method for manufacturing colored mirror |
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