JPH06112078A - Manufacture of co-cu artificial grating film - Google Patents
Manufacture of co-cu artificial grating filmInfo
- Publication number
- JPH06112078A JPH06112078A JP28243992A JP28243992A JPH06112078A JP H06112078 A JPH06112078 A JP H06112078A JP 28243992 A JP28243992 A JP 28243992A JP 28243992 A JP28243992 A JP 28243992A JP H06112078 A JPH06112078 A JP H06112078A
- Authority
- JP
- Japan
- Prior art keywords
- ratio
- artificial lattice
- lattice film
- layer mainly
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、強磁性磁気抵抗効果を
利用して磁界を検出する磁気抵抗効果素子として有用な
Ｃｏ−Ｃｕ系人工格子膜の製造方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a Co-Cu based artificial lattice film useful as a magnetoresistive effect element for detecting a magnetic field by utilizing a ferromagnetic magnetoresistive effect.
【０００２】[0002]
【従来の技術】磁気抵抗効果を用いて磁界を検出する磁
気抵抗効果素子は、磁気センサー、磁気ヘッド、回転検
出素子、位置検出素子等として現在盛んに用いられてい
る。一般に磁気抵抗効果素子として挙げられるパーマロ
イは異方性磁界４ガウス程度と小さく、非常に良好な軟
磁気特性を示す。このため、磁気記録の分野において
は、微弱な信号磁界を読み出す磁気抵抗（ＭＲ）ヘッド
用材料に適している。2. Description of the Related Art Magnetoresistive elements for detecting a magnetic field by utilizing the magnetoresistive effect are currently actively used as magnetic sensors, magnetic heads, rotation detecting elements, position detecting elements and the like. Permalloy, which is generally mentioned as a magnetoresistive element, has a small anisotropic magnetic field of about 4 Gauss and exhibits very good soft magnetic characteristics. Therefore, in the field of magnetic recording, it is suitable as a material for a magnetoresistive (MR) head that reads out a weak signal magnetic field.
【０００３】しかし、今後さらに進展すると思われる高
密度磁気記録に対応するため、より大きな磁気抵抗比
（ＭＲ比）を持つ材料が必要である。Ｆｅ層とＣｒ層を
交互に繰り返して作製された積層体において、４．２Ｋ
の低温、磁場２Ｔの下で、約５０％のＭＲ比が観測され
注目を集めた（M.N.Baibich,et al; Phys.Rev.Lett. 61
(1988)2472.)。However, a material having a larger magnetoresistive ratio (MR ratio) is required in order to cope with high density magnetic recording which is expected to progress further in the future. 4.2K in a laminated body made by alternately repeating Fe layers and Cr layers
At a low temperature of 2T and a magnetic field of 2T, an MR ratio of about 50% was observed and attracted attention (MNBaibich, et al; Phys. Rev. Lett. 61).
(1988) 2472.).
【０００４】その後、Ｃｏ−Ｃｕ（（Ｃｏ 1.5nm−Ｃｕ
0.9nm）×３０層）人工格子膜において、室温，磁場
０．５Ｔなる条件下で、４８％のＭＲ比が観察され、Ｃ
ｏ−Ｃｕ（（Ｃｏ 1.5nm−Ｃｕ 2nm）×３０層）人工格
子膜においては、室温，磁場０．０５Ｔなる条件下で、
約１９％のＭＲ比が観察された（D.H.Mosca et al; J.M
ag.Magn.Mat. 94(1991)L1.）。After that, Co-Cu ((Co 1.5nm-Cu
In an artificial lattice film of 0.9 nm) × 30 layers), an MR ratio of 48% was observed under the conditions of room temperature and magnetic field of 0.5 T, and C
In an o-Cu ((Co 1.5nm-Cu 2nm) x 30 layer) artificial lattice film, at room temperature and a magnetic field of 0.05T,
An MR ratio of about 19% was observed (DHMosca et al; JM
ag.Magn.Mat. 94 (1991) L1.).
【０００５】また、バイアス・スパッタの条件について
調べたものとして、三村哲哉等の報告（日本応用磁気学
会16(1992)319.）があるが、室温での最大のＭＲ比は１
３．１％であった。In addition, as a study of the conditions of bias sputtering, there is a report by Tetsuya Mimura et al. (Japan Applied Magnetics Society 16 (1992) 319.), But the maximum MR ratio at room temperature is 1
It was 3.1%.
【０００６】一般に、人工格子膜は真空蒸着法、スパッ
タリング法、イオンプレーティング法等で形成されるの
であるが、報告者により装置も作製条件も異なってい
る。また、基板も単にガラスの他に、人工格子膜のエピ
タキシャル成長を考慮して単結晶のＧａＡｓ，Ｓｉ，Ｍ
ｇＯ基板等を使用していることも多く、最適な条件が未
だ明らかにされていない。Generally, the artificial lattice film is formed by a vacuum vapor deposition method, a sputtering method, an ion plating method or the like, but the apparatus and the manufacturing conditions differ depending on the reporter. The substrate is not only glass but also single crystal GaAs, Si, M in consideration of the epitaxial growth of the artificial lattice film.
Since the gO substrate is often used, the optimum conditions have not been clarified yet.
【０００７】[0007]
【発明が解決しようとする課題】このように、より大き
なＭＲ比を得るために様々な作製条件で人工格子膜が作
製されているが、大きな外部磁場を必要とする等、十分
なものではなかった。そこで本発明は、かかる実情に鑑
みて提案されたものであり、Ｃｏ−Ｃｕ系人工格子膜の
作製条件を最適化し、室温，磁場０．１Ｔ以下なる条件
下でも大きなＭＲ比を示すような優れたＣｏ−Ｃｕ系人
工格子膜を製造する方法を提供することを目的とする。As described above, artificial lattice films are produced under various production conditions in order to obtain a larger MR ratio, but they are not sufficient because they require a large external magnetic field. It was Therefore, the present invention has been proposed in view of such circumstances, and is excellent in that the manufacturing conditions of the Co—Cu artificial lattice film are optimized and that a large MR ratio is exhibited even under the conditions of room temperature and a magnetic field of 0.1 T or less. Another object of the present invention is to provide a method for producing a Co-Cu based artificial lattice film.
【０００８】[0008]
【課題を解決するための手段】本発明は、上述の目的を
達成するために提案されたものである。本発明は、０．
０７〜０．５Ｐａなる不活性ガス雰囲気下でスパッタリ
ングすることによって、非磁性支持体上にＣｏを主体と
する層とＣｕを主体とする層とを交互に積層してＣｏ−
Ｃｕ系人工格子膜を形成することを特徴とするものであ
る。The present invention has been proposed to achieve the above object. The present invention relates to
By sputtering in an inert gas atmosphere of 07 to 0.5 Pa, Co-based layers and Cu-based layers are alternately laminated on the non-magnetic support to form Co-
It is characterized in that a Cu-based artificial lattice film is formed.
【０００９】特に、Ｃｏを主体とする層の厚みを０．５
〜３ｎｍ、且つ、Ｃｕを主体とする層の厚みを１．７〜
４ｎｍに形成することが好ましい。また、Ｃｏ層−Ｃｕ
層の１組を１層として、上記人工格子膜は１０層以上積
層されることが好ましい。In particular, the thickness of the layer mainly composed of Co is 0.5
~ 3 nm, and the thickness of the layer mainly composed of Cu is 1.7 ~
The thickness is preferably 4 nm. Also, Co layer-Cu
It is preferable that 10 or more layers of the artificial lattice film are laminated with one set of layers as one layer.
【００１０】スパッタリング時の不活性ガス圧力が０．
５Ｐａ以上になると、Ｃｏ−Ｃｕ系人工格子膜の比抵抗
ρは徐々に増加し、Δρは急激に減少する。よって、Ｍ
Ｒ比（磁気抵抗比）は急激に減少して１０％以下の値と
なってしまう。一方、上記不活性ガス圧力が０．０７Ｐ
ａ以下になると、比抵抗ρが増加し始め、ＭＲ比も急激
に減少してしまうので好ましくない。The inert gas pressure during sputtering is 0.
Above 5 Pa, the specific resistance ρ of the Co—Cu artificial lattice film gradually increases and Δρ rapidly decreases. Therefore, M
The R ratio (magnetic resistance ratio) sharply decreases to a value of 10% or less. On the other hand, the inert gas pressure is 0.07P
When it becomes a or less, the specific resistance ρ starts to increase and the MR ratio also sharply decreases, which is not preferable.
【００１１】また、Ｃｕを主体とする層の厚さが４ｎｍ
以上であるとＭＲ比が１０％以下となってしまい、１．
７ｎｍ以下であるとＭＲ比が小さい上、磁気抵抗が飽和
する外部磁場が０．１Ｔよりも大きくなるので弱磁場で
の検出に好ましくない。同様に、Ｃｏを主体とする層の
厚さが３ｎｍ以上であったり、０．５ｎｍ以下であった
りするとＭＲ比が急減し１５％を下回るため好ましくな
い。The thickness of the layer mainly composed of Cu is 4 nm.
If it is above, the MR ratio becomes 10% or less, and 1.
If it is 7 nm or less, the MR ratio is small and the external magnetic field at which the magnetic resistance saturates becomes larger than 0.1 T, which is not preferable for detection in a weak magnetic field. Similarly, if the thickness of the layer mainly composed of Co is 3 nm or more or 0.5 nm or less, the MR ratio sharply decreases and falls below 15%, which is not preferable.
【００１２】[0012]
【作用】Ｃｏ−Ｃｕ系人工格子膜のＭＲ比は、製造工程
における諸条件、例えば、スパッタリング時の不活性ガ
ス圧力、Ｃｏ或いはＣｕの層の厚さ等で変化してくる。
このため、最適な製造条件を選んでやると、室温下しか
も０．１Ｔ以下の低磁場においても大きなＭＲ比を持つ
Ｃｏ−Ｃｕ系人工格子膜が得られる。The MR ratio of the Co-Cu artificial lattice film changes depending on various conditions in the manufacturing process, for example, the pressure of the inert gas during sputtering, the thickness of the Co or Cu layer, and the like.
Therefore, if optimal manufacturing conditions are selected, a Co—Cu artificial lattice film having a large MR ratio at room temperature and in a low magnetic field of 0.1 T or less can be obtained.
【００１３】[0013]
【実施例】以下、本発明を適用した具体的な実施例につ
いて、実験結果に基づき説明する。本実施例では、様々
な作製条件下でＣｏ−Ｃｕ系人工格子膜を作製し、ＭＲ
比等を測定した。EXAMPLES Specific examples to which the present invention is applied will be described below based on experimental results. In this example, Co-Cu based artificial lattice film was prepared under various preparation conditions, and MR
The ratio etc. were measured.
【００１４】Ｃｏ−Ｃｕ系人工格子膜はスパッタリング
装置を用いガラス基板上に形成したＣｏとＣｕからなる
多層膜である。スパッタリング装置は１×１０-4Ｐａま
で減圧し、直径５インチのＣｕと直径６インチのＣｏタ
ーゲットを使用し、室温でＡｒガス雰囲気下、回転して
いる基板上にＣｏとＣｕを交互に膜付けし、１５０層の
多層膜を作製した。The Co-Cu artificial lattice film is a multilayer film composed of Co and Cu formed on a glass substrate by using a sputtering device. The sputtering system reduced the pressure to 1 × 10 -4 Pa, used Cu with a diameter of 5 inches and a Co target with a diameter of 6 inches, and alternately deposited Co and Cu on a rotating substrate in an Ar gas atmosphere at room temperature. Then, a multilayer film having 150 layers was produced.
【００１５】上記スパッタリングの方法として、ＲＦマ
グネトロン方式，ＤＣマグネトロン方式，対向ターゲッ
ト方式等が有効である。なお、人工格子膜の積層周期は
ＣｏとＣｕのターゲットに加える電力と基板の回転数の
コントロールにより制御した。As the sputtering method, the RF magnetron method, DC magnetron method, facing target method, etc. are effective. The stacking period of the artificial lattice film was controlled by controlling the power applied to the Co and Cu targets and the rotation speed of the substrate.
【００１６】実験１ 先ず、スパッタリング時のＡｒガス圧がＣｏ−Ｃｕ系人
工格子膜の形成にどのように影響するのかを調べた。種
々のＡｒガス圧（1.5, 0.67, 0.34, 0.24, 0.13, 0.11P
a ）でスパッタリングしたＣｏ 0.5nm−Ｃｕ 2nm（各Ｃ
ｏ層が0.5nm 厚，各Ｃｕ層が2nm 厚で積層されているこ
とを示す。）人工格子膜を作製した。 Experiment 1 First, how the Ar gas pressure during sputtering influences the formation of a Co-Cu artificial lattice film was examined. Various Ar gas pressure (1.5, 0.67, 0.34, 0.24, 0.13, 0.11P
a) sputtered Co 0.5nm-Cu 2nm (each C
It shows that the o layer is 0.5 nm thick and each Cu layer is 2 nm thick. ) An artificial lattice film was prepared.
【００１７】全ての試料について、小角Ｘ線回折により
積層周期を、中角Ｘ線回折により結晶構造を調べた。上
記試料のＸ線回折像を図１に示す。この図から小角での
回折が１．５Ｐａのとき１次、０．６７Ｐａのとき２
次、０．３４Ｐａ以下のとき３次までのピークが検出さ
れ、Ａｒガス圧力が低い方が積層膜の界面での拡散が小
さいことを示している。For all samples, the stacking period was examined by small-angle X-ray diffraction, and the crystal structure was examined by medium-angle X-ray diffraction. The X-ray diffraction image of the above sample is shown in FIG. From this figure, it is the first order when the small angle diffraction is 1.5 Pa, and the second when 0.67 Pa.
Next, when the pressure is 0.34 Pa or less, peaks up to the third order are detected, indicating that the lower the Ar gas pressure, the smaller the diffusion at the interface of the laminated film.
【００１８】なお、図中矢印Ａは１次の回折ピーク、矢
印Ｂは２次の回折ピーク、矢印Ｃは３次の回折ピークを
示す。In the figure, arrow A indicates the first-order diffraction peak, arrow B indicates the second-order diffraction peak, and arrow C indicates the third-order diffraction peak.
【００１９】中角Ｘ線回折で５本の回折ピークが観測さ
れ、これらは面心立方（以下FCC とする。）（１１
１），（２００），（２２０），（３１１），（２２
２）と同定される。なお、図１中では、順に矢印ａ，
ｂ，ｃ，ｄ，ｅで示されている。しかし、各々のピーク
の２θ位置はFCC Ｃｕのそれよりも高角度側にずれ、FC
C Ｃｏのそれよりも低角度側に観測される。従って、FC
C ＣｏとFCC Ｃｕとの干渉またはFCC ＣｏとFCC Ｃｕと
エピタキシャル成長していることを示唆している。Five diffraction peaks were observed by medium-angle X-ray diffraction, and these were face-centered cubic (hereinafter referred to as FCC) (11).
1), (200), (220), (311), (22
2) identified. In FIG. 1, arrow a,
It is indicated by b, c, d and e. However, the 2θ position of each peak is shifted to a higher angle side than that of FCC Cu, and FC
It is observed on the lower angle side than that of C Co. Therefore, FC
It suggests that the interference between C Co and FCC Cu or the epitaxial growth of FCC Co and FCC Cu.
【００２０】この図１を見ると、０．１３Ｐａのとき
（１１１）の回折線が最も強く結晶配向していることが
わかる。また、Ｃｏ−Ｃｕ系人工格子膜において、（１
１１）配向の方が（１００）配向のときよりもＣｏとＣ
ｕの界面での拡散が少ないことが知られている。他のＡ
ｒガス圧、積層周期の試料でも主ピークの回りにサテラ
イトピークが加わる他はほぼ同じである。From FIG. 1, it can be seen that the diffraction line of (111) has the strongest crystal orientation at 0.13 Pa. In addition, in the Co-Cu-based artificial lattice film, (1
11) orientation is Co and C more than when it is (100) orientation
It is known that the diffusion of u at the interface is small. Other A
A sample with r gas pressure and stacking period is almost the same except that a satellite peak is added around the main peak.
【００２１】上述の試料について、室温，外部磁場±
０．１Ｔなる条件下でＭＲ比を測り、その結果を図２に
示す。図２より、スパッタリング時のＡｒガス圧よって
ＭＲ比が変化することが判る。これによると、０．１３
Ｐａでスパッタリングされた人工格子膜が最も大きなＭ
Ｒ比をとっている。For the above samples, room temperature, external magnetic field ±
The MR ratio was measured under the condition of 0.1T, and the result is shown in FIG. From FIG. 2, it can be seen that the MR ratio changes depending on the Ar gas pressure during sputtering. According to this, 0.13
The artificial lattice film sputtered at Pa has the largest M
It takes the R ratio.
【００２２】この０．１３Ｐａなるガス圧でスパッタリ
ングされた人工格子膜は、先のＸ線回折測定で最も強い
結晶配向をしているものであることが示されており、こ
れより、結晶配向性の良いものほどＭＲ比が大きいと考
えられる。The artificial lattice film sputtered at the gas pressure of 0.13 Pa was shown to have the strongest crystal orientation in the above X-ray diffraction measurement. It is considered that the better the value is, the larger the MR ratio is.
【００２３】なお、各Ｃｏ層が１．５ｎｍ厚であること
以外は上記のＣｏ−Ｃｕ系人工格子膜と同様にして、種
々のＡｒガス圧でスパッタリングして作製された人工格
子膜についても同様にＭＲ比を測定したところ、０．２
４Ｐａのガス圧でスパッタリングされたものが最も大き
な値をとった。It should be noted that, except that each Co layer has a thickness of 1.5 nm, the same applies to artificial lattice films prepared by sputtering with various Ar gas pressures in the same manner as the above Co-Cu artificial lattice film. The MR ratio was measured to be 0.2
The largest value was obtained by sputtering at a gas pressure of 4 Pa.
【００２４】実験２ 次に、Ｃｏ 1nm−Ｃｕ 2nm 人工格子膜において、作製
時のＡｒガス圧力が０．６７Ｐａと０．２４Ｐａの２種
の試料について比較した。 Experiment 2 Next, two samples of Co 1 nm-Cu 2 nm artificial lattice film having Ar gas pressures of 0.67 Pa and 0.24 Pa at the time of production were compared.
【００２５】図３（Ｉ）はＡｒガス圧０．６７Ｐａでス
パッタリングした人工格子膜の、磁化容易軸Ｍに垂直に
磁場Ｈと電流Ｉを流したときの磁気抵抗Ｒを示し、（Ｉ
Ｉ）は同じく磁化容易軸Ｍに平行に磁場Ｈと電流Ｉを流
したときの磁気抵抗Ｒを示す。また、図４はＡｒガス圧
０．２４Ｐａでスパッタリングした人工格子膜の、磁化
容易軸Ｍに垂直に磁場Ｈと電流Ｉを流したときの磁気抵
抗Ｒを示す。FIG. 3 (I) shows the magnetic resistance R of an artificial lattice film sputtered at an Ar gas pressure of 0.67 Pa when a magnetic field H and a current I are applied perpendicularly to the easy axis M of magnetization.
Similarly, I) shows the magnetic resistance R when a magnetic field H and a current I are passed in parallel with the easy axis M. Further, FIG. 4 shows the magnetic resistance R of the artificial lattice film sputtered at an Ar gas pressure of 0.24 Pa when a magnetic field H and a current I are passed perpendicularly to the easy axis M of magnetization.
【００２６】なお、図４に示される人工格子膜には、試
料の膜面内で等方的であり、磁化容易軸Ｍに対して平行
に磁場Ｈと電流Ｉを流しても、殆ど同様の結果となっ
た。It should be noted that the artificial lattice film shown in FIG. 4 is isotropic in the film plane of the sample, and is almost the same even when the magnetic field H and the current I are passed in parallel to the easy axis M of magnetization. It became a result.
【００２７】図３（Ｉ）で示される人工格子膜のＭＲ比
（室温，±０．１Ｔ）は０．３６％であり、図３（Ｉ
Ｉ）に示される人工格子膜のＭＲ比は０．３９％であっ
た。また、図４に示される人工格子膜のＭＲ比は２７．
８％と大きな値をとる。なお、比抵抗ρ及びΔρは０．
６７Ｐａのとき２３．６μΩ.cm ，０．０８μΩ.cm
で、０．２４Ｐａのとき１３．８９μΩ.cm ，３．０μ
Ω.cm であった。The MR ratio (room temperature, ± 0.1T) of the artificial lattice film shown in FIG. 3 (I) is 0.36%.
The MR ratio of the artificial lattice film shown in I) was 0.39%. The MR ratio of the artificial lattice film shown in FIG.
It takes a large value of 8%. The specific resistances ρ and Δρ are 0.
At 67 Pa, 23.6 μΩ.cm, 0.08 μΩ.cm
At 0.24Pa, 13.89μΩ.cm, 3.0μ
It was Ω.cm.
【００２８】実験３ さらに、人工格子膜を構成する層の厚さがＭＲ比に与え
る影響を調べた。ここでは、０．２４ＰａのＡｒガス圧
力下でスパッタリングしたＣｏ−Ｃｕ系人工格子膜につ
いて層の厚さを変化させた。 Experiment 3 Furthermore, the influence of the thickness of the layers constituting the artificial lattice film on the MR ratio was investigated. Here, the layer thickness of the Co—Cu based artificial lattice film sputtered under the Ar gas pressure of 0.24 Pa was changed.
【００２９】先ず、Ｃｕ層の厚さを２．１ｎｍに定めた
状態でＣｏ層の厚さを種々に変化させ、Ｃｏ層の膜厚と
ＭＲ比（室温，±０．１Ｔ）との関係を調べる。この結
果を図５に示す。これより、Ｃｏ層が１．０〜１．５ｎ
ｍの厚さのとき２５％以上の大きなＭＲ比が得られるこ
とが判る。First, the thickness of the Co layer was variously changed while the thickness of the Cu layer was set to 2.1 nm, and the relationship between the thickness of the Co layer and the MR ratio (room temperature, ± 0.1 T) was calculated. Find out. The result is shown in FIG. From this, the Co layer is 1.0 to 1.5 n
It can be seen that when the thickness is m, a large MR ratio of 25% or more can be obtained.
【００３０】次に、Ｃｏ層の厚さを０．５ｎｍ又は１．
５ｎｍに定めてＣｕ層の厚さを変化させ、ＭＲ比を測定
した。この結果を図６に示す。図中、○でプロットされ
た曲線がＣｏ層厚１．５ｎｍのものであり、△でプロッ
トされた曲線がＣｏ層厚０．５ｎｍのものである。この
図より、ＭＲ比の値がＣｕ層の厚さによって振動してお
り、Ｃｕ層が２．０ｎｍ付近で最大値をとるのが判る。Next, the thickness of the Co layer is set to 0.5 nm or 1.
The MR ratio was measured by setting the thickness to 5 nm and changing the thickness of the Cu layer. The result is shown in FIG. In the figure, the curve plotted with ◯ is for the Co layer thickness of 1.5 nm, and the curve plotted with Δ is for the Co layer thickness of 0.5 nm. From this figure, it can be seen that the MR ratio value oscillates depending on the thickness of the Cu layer, and the Cu layer takes the maximum value in the vicinity of 2.0 nm.
【００３１】この結果は、人工格子膜の積層数の違いの
ためかD.H.Mosca 等の報告と大きく異なるものとなっ
た。This result is significantly different from the report of DH Mosca et al., Probably because of the difference in the number of laminated artificial lattice films.
【００３２】実験４ そこで、上記のように積層数によってＭＲ比が変化する
かどうか調べた。ここでは、Ｃｏ 1.5nm−Ｃｕ 2.0nm
人工格子膜の積層数を変化させた試料を作製し、室温，
磁場±０．１Ｔなる条件下でＭＲ比を測定した。この結
果を図７に示す。これより、積層数を増加させると１０
層付近で急激にＭＲ比が上昇することが判る。 Experiment 4 Therefore, it was examined whether the MR ratio changes depending on the number of stacked layers as described above. Here, Co 1.5nm-Cu 2.0nm
Samples with different number of artificial lattice films were prepared and
The MR ratio was measured under the condition of a magnetic field of ± 0.1T. The result is shown in FIG. 7. From this, it is 10 when the number of layers is increased.
It can be seen that the MR ratio sharply increases near the layer.
【００３３】実験５ 最後に、人工格子膜を形成させる基板の違いによるＭＲ
比の変化も調べた。（Ｃｏ 1.5nm−Ｃｕ 2.1nm）×１５
５層 人工格子膜を種々の下地基板（ガラス，ホトセラ
ム，石英ガラス，ポリイミド，シリコン）に対して膜付
けし、室温，磁場±０．１Ｔなる条件下でＭＲ比を測定
し、この結果を図８に示す。 Experiment 5 Finally, MR due to the difference in the substrate on which the artificial lattice film is formed
The change in ratio was also examined. (Co 1.5nm-Cu 2.1nm) x 15
A 5-layer artificial lattice film is attached to various base substrates (glass, photocellum, quartz glass, polyimide, silicon) and the MR ratio is measured under room temperature and magnetic field of ± 0.1T. 8 shows.
【００３４】ＭＲ比の値は以下に示すようになり、基板
によってＭＲ比に違いがあることが判る。The values of the MR ratio are as shown below, and it can be seen that the MR ratio differs depending on the substrate.
【００３５】（Ｌ）ガラス ： ２１．８％ （Ｍ）ホトセラム ： ２４．８％ （Ｎ）石英ガラス ： １９．８％ （Ｏ）ポリイミド ： ２４．０％ （Ｐ）シリコン ： ２０．８％(L) Glass: 21.8% (M) Photoceram: 24.8% (N) Quartz glass: 19.8% (O) Polyimide: 24.0% (P) Silicon: 20.8%
【００３６】以上の結果より、Ｃｏ−Ｃｕ系人工格子膜
を作製する際、Ａｒガス圧力は０．０７〜０．５Ｐａで
あること、Ｃｏ層の厚さは０．５〜３ｎｍ且つＣｕ層の
厚さが１．７〜４ｎｍであること、積層数は１０層以上
であること等を満たして作製すると、優れたＭＲ比を有
するＣｏ−Ｃｕ系人工格子膜となることが判った。From the above results, when the Co-Cu artificial lattice film is produced, the Ar gas pressure is 0.07 to 0.5 Pa, the Co layer thickness is 0.5 to 3 nm and the Cu layer thickness is 0.5 to 3 nm. It was found that a Co—Cu based artificial lattice film having an excellent MR ratio can be obtained when the film is manufactured so that the thickness is 1.7 to 4 nm and the number of layers is 10 or more.
【００３７】なお、本発明に係わる磁気抵抗効果膜は、
その膜面と平行な向きに磁場を印加するとともに電流を
流す場合、磁場印加方向が電流と平行であっても、垂直
な方向であっても殆ど同じ磁気抵抗を示している。The magnetoresistive film according to the present invention is
When a magnetic field is applied and a current is passed in a direction parallel to the film surface, almost the same magnetic resistance is exhibited regardless of whether the magnetic field application direction is parallel or perpendicular to the current.
【００３８】ところで、本発明の人工格子膜はＣｏとＣ
ｕからなるが、これらの一部を他の元素で置換すること
も可能である。例えば、Ｃｏは約５０原子％までＦｅや
Ｎｉ等強磁性物質で置換することができ、Ｃｏを５０原
子％Ｎｉで置換した Ｃｏ50Ｎｉ50 1nm−Ｃｕ 2nm 人
工格子膜を０．２４ＰａのＡｒガス圧力下でスパッタリ
ングして作製した場合、ＭＲ比は１９．２％となる。By the way, the artificial lattice film of the present invention contains Co and C.
Although it is composed of u, it is also possible to replace some of these with other elements. For example, Co can be replaced with a ferromagnetic material such as Fe or Ni up to about 50 atomic%, and a Co 50 Ni 50 1nm-Cu 2nm artificial lattice film in which Co is replaced with 50 atomic% Ni is used as an Ar gas of 0.24 Pa. When manufactured by sputtering under pressure, the MR ratio is 19.2%.
【００３９】一方、Ｃｕは約１０原子％まではＰｔやＡ
ｇ等の非磁性物質で置換しても、１５％程度のＭＲ比を
保持することができる。On the other hand, Cu is Pt or A up to about 10 atomic%.
Even if it is replaced with a non-magnetic substance such as g, an MR ratio of about 15% can be maintained.
【００４０】[0040]
【発明の効果】以上の説明からも明らかなように、Ｃｏ
−Ｃｕ系人工格子膜のＭＲ比は、製造工程における諸条
件、例えば、スパッタリング時のＡｒガス圧力、Ｃｏ或
いはＣｕの層の厚さ、積層数、基板の違い等で変化して
くる。このため、最適な製造条件を選んでやると、室温
下しかも０．１Ｔ以下の低磁場においても大きなＭＲ比
を持つＣｏ−Ｃｕ系人工格子膜を得ることができる。As is clear from the above description, Co
The MR ratio of the —Cu-based artificial lattice film changes depending on various conditions in the manufacturing process, for example, the Ar gas pressure during sputtering, the thickness of the Co or Cu layer, the number of stacked layers, the difference in the substrate, and the like. Therefore, if optimal manufacturing conditions are selected, a Co—Cu artificial lattice film having a large MR ratio at room temperature and in a low magnetic field of 0.1 T or less can be obtained.
【図１】人工格子膜のＸ線回折像を示す特性図である。FIG. 1 is a characteristic diagram showing an X-ray diffraction image of an artificial lattice film.
【図２】Ａｒガス圧力とＭＲ比の関係を示す特性図であ
る。FIG. 2 is a characteristic diagram showing the relationship between Ar gas pressure and MR ratio.
【図３】外部磁場と磁気抵抗の関係を示す特性図であ
る。FIG. 3 is a characteristic diagram showing a relationship between an external magnetic field and a magnetic resistance.
【図４】外部磁場と磁気抵抗の関係を示す特性図であ
る。FIG. 4 is a characteristic diagram showing a relationship between an external magnetic field and a magnetic resistance.
【図５】Ｃｏ層の膜厚とＭＲ比の関係を示す特性図であ
る。FIG. 5 is a characteristic diagram showing a relationship between a film thickness of a Co layer and an MR ratio.
【図６】Ｃｕ層の膜厚とＭＲ比の関係を示す特性図であ
る。FIG. 6 is a characteristic diagram showing the relationship between the thickness of a Cu layer and the MR ratio.
【図７】積層数とＭＲ比の関係を示す特性図である。FIG. 7 is a characteristic diagram showing the relationship between the number of stacked layers and the MR ratio.
【図８】基板の種類による磁気抵抗効果の違いを示す特
性図である。FIG. 8 is a characteristic diagram showing a difference in magnetoresistive effect depending on the type of substrate.
Claims (2)
囲気下でスパッタリングすることによって、非磁性支持
体上にＣｏを主体とする層とＣｕを主体とする層とを交
互に積層してＣｏ−Ｃｕ系人工格子膜を形成することを
特徴とするＣｏ−Ｃｕ系人工格子膜の製造方法。1. A layer mainly containing Co and a layer mainly containing Cu are alternately laminated on a non-magnetic support by sputtering in an inert gas atmosphere of 0.07 to 0.5 Pa. A method for producing a Co-Cu artificial lattice film, which comprises forming a Co-Cu artificial lattice film.
ｎｍ、且つ、Ｃｕを主体とする層の厚みを１．７〜４ｎ
ｍとすることを特徴とする請求項１記載のＣｏ−Ｃｕ系
人工格子膜の製造方法。2. The thickness of the layer mainly composed of Co is 0.5 to 3
nm, and the thickness of the layer mainly composed of Cu is 1.7 to 4n.
The method for producing a Co-Cu-based artificial lattice film according to claim 1, wherein m is m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28243992A JPH06112078A (en) | 1992-09-28 | 1992-09-28 | Manufacture of co-cu artificial grating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28243992A JPH06112078A (en) | 1992-09-28 | 1992-09-28 | Manufacture of co-cu artificial grating film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06112078A true JPH06112078A (en) | 1994-04-22 |
Family
ID=17652434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28243992A Withdrawn JPH06112078A (en) | 1992-09-28 | 1992-09-28 | Manufacture of co-cu artificial grating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06112078A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000025371A1 (en) * | 1998-10-26 | 2000-05-04 | Mitsubishi Denki Kabushiki Kaisha | Magnetoresistant device and a magnetic sensor comprising the same |
-
1992
- 1992-09-28 JP JP28243992A patent/JPH06112078A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000025371A1 (en) * | 1998-10-26 | 2000-05-04 | Mitsubishi Denki Kabushiki Kaisha | Magnetoresistant device and a magnetic sensor comprising the same |
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