JP2000091665A - Magnetoresistance effect film and manufacture thereof - Google Patents
Magnetoresistance effect film and manufacture thereofInfo
- Publication number
- JP2000091665A JP2000091665A JP10254474A JP25447498A JP2000091665A JP 2000091665 A JP2000091665 A JP 2000091665A JP 10254474 A JP10254474 A JP 10254474A JP 25447498 A JP25447498 A JP 25447498A JP 2000091665 A JP2000091665 A JP 2000091665A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- buffer layer
- magnetic
- substrate
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は磁気抵抗効果膜及び
その製造方法に関し、特に磁気センサや薄膜磁気ヘッド
等に用いられる磁気抵抗効果膜及びその製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive film and a method of manufacturing the same, and more particularly to a magnetoresistive film used for a magnetic sensor, a thin film magnetic head, and the like, and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】印加磁場により抵抗が変化する磁気抵抗
効果を利用した磁気抵抗効果膜は、磁場検出用センサや
磁気ヘッド等に用いられている。現在のところ、磁気抵
抗効果膜には、パーマロイを中心とした磁性合金薄膜が
用いられている。2. Description of the Related Art A magnetoresistive film utilizing a magnetoresistive effect in which the resistance changes according to an applied magnetic field is used for a magnetic field detecting sensor, a magnetic head and the like. At present, a magnetic alloy thin film mainly made of permalloy is used as the magnetoresistive film.
【０００３】この磁気抵抗効果膜は、電流方向と磁化方
向の相対角度に依存して生じる抵抗の差を利用したもの
であるが、その磁気抵抗比は３〜４％程度と小さく、高
感度化のためには、より磁気抵抗比の大きな材料が望ま
れている。This magnetoresistive film utilizes a difference in resistance generated depending on the relative angle between the current direction and the magnetization direction. The magnetoresistive ratio is as small as about 3 to 4%, and the sensitivity is increased. Therefore, a material having a larger magnetoresistance ratio is desired.
【０００４】このような材料の中で、コバルト（Ｃ
ｏ）、鉄（Ｆｅ）等の磁性層と銅（Ｃｕ）、クロム（Ｃ
ｒ）等の非磁性層を数ナノメーターの周期で交互に積層
した人工格子膜は、磁気抵抗比がパーマロイより１桁以
上大きく、磁気抵抗効果素子への応用が期待されてい
る。Among such materials, cobalt (C
o), a magnetic layer such as iron (Fe) and copper (Cu), chromium (C
An artificial lattice film in which non-magnetic layers such as r) are alternately laminated at a period of several nanometers has a magnetoresistance ratio one order of magnitude higher than that of Permalloy, and is expected to be applied to a magnetoresistance effect element.
【０００５】Ｃｏ／ＣｕやＦｅ／Ｃｒなどの人工格子膜
では、非磁性層の厚さが約１ｎｍであるとき、磁性層間
に反強磁性相互作用が働き、磁性層の磁化が一層おきに
逆方向を向く（反強磁性配列）。In an artificial lattice film such as Co / Cu or Fe / Cr, when the thickness of the nonmagnetic layer is about 1 nm, antiferromagnetic interaction acts between the magnetic layers, and the magnetization of the magnetic layer is reversed every other layer. Orient (antiferromagnetic array).
【０００６】磁気抵抗効果は、この磁化の反強磁性配列
が磁場の印加によって強磁性配列に変化することによっ
て生じる。反強磁性配列の時の抵抗をＲｍａｘ、強磁性
配列の時の抵抗をＲｍｉｎとして表わされる磁気抵抗比
（Ｒｍａｘ−Ｒｍｉｎ）／Ｒｍｉｎは、Ｃｏ／Ｃｕ人工
格子膜においては、室温で６５％以上に達する。[0006] The magnetoresistance effect is generated when the antiferromagnetic arrangement of the magnetization changes to a ferromagnetic arrangement by application of a magnetic field. The magnetoresistance ratio (Rmax−Rmin) / Rmin, where the resistance in the antiferromagnetic array is Rmax and the resistance in the ferromagnetic array is Rmin, is 65% or more at room temperature in the Co / Cu artificial lattice film. Reach.
【０００７】この技術は「１９９１年６月１０日、アプ
ライド・フィジックス・レター、第５８巻、第２３号、
第２７１０〜２７１２頁（Ｓ．Ｓ．Ｐ．Ｐａｒｋｉｎ
ｅｔａｌ．，Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．，Ｐ．２
７１０，ＶＯＬ．５８，ＮＯ．２３，１９９１）」（以
下、文献１という）に開示されている。This technique is described in "Applied Physics Letter, Vol. 58, No. 23, June 10, 1991,
2710 to 2712 (SSP Parkin)
et al. , Appl. Phys. Lett. , P. 2
710, VOL. 58, NO. 23, 1991) "(hereinafter referred to as Document 1).
【０００８】又、磁性層と非磁性層とを交互に積層させ
て得られる磁気抵抗素子の他の例が特開平７−２１１９
５５号公報（以下、文献２という）及び特開平６−２９
５８１８号公報（以下、文献３という）に開示されてい
る。Another example of a magnetoresistive element obtained by alternately laminating magnetic layers and nonmagnetic layers is disclosed in Japanese Patent Application Laid-Open No. 7-2119.
No. 55 (hereinafter referred to as Document 2) and JP-A-6-29
No. 5818 (hereinafter referred to as Reference 3).
【０００９】[0009]
【発明が解決しようとする課題】しかし、文献１に示さ
れる磁性層間に反強磁性相互作用が働く人工格子膜は、
磁気抵抗の飽和する（強磁性配列になる）磁場が室温で
数ｋＯｅ〜１０ｋＯｅと大きく、高い磁場感度が必要と
される磁気センサや磁気ヘッドに適用することは困難で
あった。However, the artificial lattice film in which an anti-ferromagnetic interaction between magnetic layers described in Document 1 works,
The magnetic field at which the magnetic resistance saturates (becomes a ferromagnetic arrangement) is as large as several kOe to 10 kOe at room temperature, and it has been difficult to apply the magnetic field to a magnetic sensor or a magnetic head that requires high magnetic field sensitivity.
【００１０】一方、人工格子膜の磁場感度を上げる試み
としては、磁性層の金属を軟磁性体のパーマロイ（Ｎｉ
Ｆｅ）やニッケル鉄コバルト合金（ＮｉＦｅＣｏ）に変
えるという方法が「１９９３年、ジャーナル・オブ・ア
プライド・フィジクス、第７４巻、第４０９６頁（Ｋ．
Ｉｎｏｍａｔａ ｅｔ ａｌ．，Ｊ．Ａｐｐｌ．Ｐｈｙ
ｓ．，Ｐ．４０９６，ＶＯＬ．７４，１９９３）」（以
下、文献４という）、「１９９３年、ジャーナル・オブ
・マグネティズム・アンド・マグネティック・マテリア
ルズ、第１２１巻、第３７４頁（Ｈ．Ｓａｋａｋｉｍａ
ｅｔ ａｌ．，Ｊ．Ｍａｇｎ．Ｍａｇｎ．Ｍａｔｅ
ｒ．，Ｐ．３７４，ＶＯＬ．１２１，１９９３）」（以
下、文献５という）が開示されているが、これら文献４
及び５の技術では磁場感度は改善しても、磁気抵抗比が
下がるという問題があった。On the other hand, as an attempt to increase the magnetic field sensitivity of the artificial lattice film, the metal of the magnetic layer was replaced with a soft magnetic material of permalloy (Ni
Fe) or a nickel-iron-cobalt alloy (NiFeCo) is described in "1993, Journal of Applied Physics, Vol. 74, p. 4096 (K.
Inomata et al. , J. et al. Appl. Phys
s. , P. 4096, VOL. 74, 1993) "(hereinafter referred to as Reference 4)," 1993, Journal of Magnetics and Magnetic Materials, Vol. 121, p. 374 (H. Sakakima).
et al. , J. et al. Magn. Magn. Mate
r. , P. 374, VOL. 121, 1993) "(hereinafter referred to as Reference 5).
In the techniques of and 5, there is a problem that the magnetoresistance ratio decreases even though the magnetic field sensitivity is improved.
【００１１】又、人工格子膜の大きな磁気抵抗比を保ち
つつ、その飽和磁場を小さくするための手段として、膜
面内に一軸磁気異方性を導入することが提案されてい
る。It has been proposed to introduce uniaxial magnetic anisotropy in the film plane as a means for reducing the saturation magnetic field while maintaining a large magnetoresistance ratio of the artificial lattice film.
【００１２】例えば、Ｆｅ／Ｃｒ人工格子膜の成膜時に
永久磁石により膜面内に１００Ｏｅ程度の磁場を印加
し、膜面内に一軸磁気異方性を導入する方法が特開平４
−２１２４０２号公報（以下、文献６という）に開示さ
れ、（１１０）面をエピタキシャル成長させたＦｅ／Ｃ
ｒ人工格子膜に生ずる微細構造に由来する形状磁気異方
性により膜面内に一軸磁気異方性を導入する方法が「１
９９３年、ジャーナル・オブ・アプライド・フィジク
ス、第７３巻、第３９２２頁（Ｗ．Ｆｏｌｋｅｒｔｓ
ａｎｄ Ｆ．Ｈａｋｋｅｎｓ，Ｊ．Ａｐｐｌ．Ｐｈｙ
ｓ．，Ｐ．３９２２，ＶＯＬ．７３，１９９３）」（以
下、文献７という）に開示されている。For example, a method of applying a magnetic field of about 100 Oe to the film surface with a permanent magnet during the formation of the Fe / Cr artificial lattice film to introduce uniaxial magnetic anisotropy in the film surface is disclosed in Japanese Patent Application Laid-Open No. HEI 4 (1999) -197686.
-212402 (hereinafter referred to as Reference 6), which is obtained by epitaxially growing the (110) plane of Fe / C.
The method of introducing uniaxial magnetic anisotropy in the film plane by the shape magnetic anisotropy derived from the microstructure generated in the r artificial lattice film is described in “1.
993, Journal of Applied Physics, 73, 3922 (W. Folkerts)
and F. Hakkens, J .; Appl. Phys
s. , P. 3922, VOL. 73, 1993) ”(hereinafter referred to as Reference 7).
【００１３】しかしながら、文献６の磁場中成膜により
一軸磁気異方性を導入して飽和磁場を下げる方法では、
導入しない時の飽和磁場を半減させる程度しか効果がな
く、又、文献７の微細構造により一軸磁気異方性を導入
して飽和磁場を下げる方法では、使用できる磁性金属が
制限されるという問題があった。However, in the method described in Document 6, the method of introducing uniaxial magnetic anisotropy by film formation in a magnetic field to lower the saturation magnetic field is as follows:
The effect of reducing the saturation magnetic field by introducing a uniaxial magnetic anisotropy by the microstructure of Reference 7 to reduce the saturation magnetic field is only limited to the extent that the saturation magnetic field when not introduced is reduced by half. there were.
【００１４】なお、文献２及び３にもこれらの問題点を
解決する手段は開示されていない。[0014] Documents 2 and 3 do not disclose means for solving these problems.
【００１５】このように、従来の技術では、磁性層間に
反強磁性相互作用が働く人工格子膜の磁気抵抗比を下げ
ることなく、飽和磁場を下げて磁場感度を上げることが
できないという問題点があった。As described above, the conventional technique has a problem in that the saturation magnetic field cannot be reduced to increase the magnetic field sensitivity without lowering the magnetoresistance ratio of the artificial lattice film in which antiferromagnetic interaction occurs between the magnetic layers. there were.
【００１６】そこで本発明の目的は、磁性層間に反強磁
性相互作用が働く人工格子膜の磁気抵抗比を下げること
なく、飽和磁場を下げて磁場感度を上げることができる
磁気抵抗効果膜及びその製造方法を提供することにあ
る。Accordingly, an object of the present invention is to provide a magnetoresistive film capable of increasing the magnetic field sensitivity by lowering the saturation magnetic field without lowering the magnetoresistance ratio of an artificial lattice film in which an antiferromagnetic interaction acts between magnetic layers. It is to provide a manufacturing method.
【００１７】[0017]
【課題を解決するための手段】前記課題を解決するため
に本発明は、磁性層と非磁性層とを交互に積層させた人
工格子膜を含む磁気抵抗効果膜であって、前記磁性層は
単結晶化された磁性層で形成されることを特徴とする。According to the present invention, there is provided a magnetoresistive film including an artificial lattice film in which magnetic layers and nonmagnetic layers are alternately laminated, wherein the magnetic layer is It is characterized by being formed of a single-crystallized magnetic layer.
【００１８】本発明による他の発明は、磁性層と非磁性
層とを交互に積層させた人工格子膜を含む磁気抵抗効果
膜の製造方法であって、その方法は前記磁性層を単結晶
化する第１工程を含むことを特徴とする。Another invention according to the present invention is a method of manufacturing a magnetoresistive effect film including an artificial lattice film in which magnetic layers and nonmagnetic layers are alternately stacked, the method comprising: It is characterized by including the first step of performing.
【００１９】本発明及び本発明による他の発明によれ
ば、磁性層を単結晶化したとき結晶磁気異方性により薄
膜面内に４回対称の立方磁気異方性が生じる。その薄膜
面内の磁化容易軸方向に磁場を印加することにより、磁
化の飽和する磁場が最小となる。この単結晶化した磁性
薄膜と非磁性金属薄膜を交互に積層して人工格子膜を形
成することによって、磁気抵抗比の飽和磁場を下げるこ
とができる。According to the present invention and another invention according to the present invention, when the magnetic layer is single-crystallized, a cubic magnetic anisotropy of four times symmetry is generated in the plane of the thin film due to the magnetocrystalline anisotropy. By applying a magnetic field in the direction of the easy axis of magnetization in the plane of the thin film, the magnetic field at which the magnetization is saturated is minimized. By forming the artificial lattice film by alternately laminating the single crystallized magnetic thin film and the nonmagnetic metal thin film, the saturation magnetic field of the magnetoresistance ratio can be reduced.
【００２０】又、磁気抵抗比は磁性層の種類によって決
まり、磁性層の結晶性が変わっても変化しない。従っ
て、磁気抵抗比が下がることもない。The magnetoresistance ratio is determined by the type of the magnetic layer, and does not change even if the crystallinity of the magnetic layer changes. Therefore, the magnetoresistance ratio does not decrease.
【００２１】なお、前述の文献４では、磁性層そのもの
を変えて飽和磁場を下げているので磁気抵抗比が下がる
場合がある。In the above-mentioned reference 4, since the saturation magnetic field is lowered by changing the magnetic layer itself, the magnetoresistance ratio may decrease.
【００２２】[0022]
【発明の実施の形態】以下、本発明の実施の形態につい
て添付図面を参照しながら説明する。まず、第１の実施
の形態について説明する。図１は本発明に係る磁気抵抗
効果膜の第１の実施の形態の断面図である。Embodiments of the present invention will be described below with reference to the accompanying drawings. First, a first embodiment will be described. FIG. 1 is a sectional view of a first embodiment of a magnetoresistive film according to the present invention.
【００２３】図１を参照して、磁気抵抗効果膜は基板１
と、この基板１上に設けられた第１バッファ層２と、こ
の第１バッファ層２上に設けられた人工格子膜５とから
なる。Referring to FIG. 1, a magnetoresistive film is formed on a substrate 1.
And a first buffer layer 2 provided on the substrate 1 and an artificial lattice film 5 provided on the first buffer layer 2.
【００２４】そして、人工格子膜５は単結晶化された磁
性層３と非磁性層４を交互に複数回積層して形成されて
いる。The artificial lattice film 5 is formed by alternately laminating a single crystallized magnetic layer 3 and a non-magnetic layer 4 a plurality of times.
【００２５】なお、バッファ層は、複数の金属からなる
多層膜でもよい。又、磁性層３の単結晶性を高めるに
は、非磁性層４の単結晶化も不可欠であり、そのために
は、基板１、バッファ層２の選択の最適化が必要であ
る。Incidentally, the buffer layer may be a multilayer film composed of a plurality of metals. In addition, in order to enhance the single crystallinity of the magnetic layer 3, it is essential that the nonmagnetic layer 4 be monocrystallized. For that purpose, it is necessary to optimize the selection of the substrate 1 and the buffer layer 2.
【００２６】次に、第２の実施の形態について説明す
る。第２の実施の形態は磁気抵抗効果膜の製造方法に関
するものである。図２は第２の実施の形態の処理工程を
示すフローチャートである。Next, a second embodiment will be described. The second embodiment relates to a method for manufacturing a magnetoresistive film. FIG. 2 is a flowchart showing the processing steps of the second embodiment.
【００２７】図２を参照して、まず単結晶基板１を２０
０℃〜７００℃に加熱する（Ｓ１）。次に、この単結晶
基板１上に第１バッファ層２として２ｎｍ〜１０ｎｍの
体心立方格子金属または面心立方格子金属の単結晶膜を
形成する（Ｓ２）。Referring to FIG. 2, first, single crystal substrate 1 is
Heat to 0 ° C to 700 ° C (S1). Next, a single crystal film of a body-centered cubic lattice metal or a face-centered cubic lattice metal of 2 nm to 10 nm is formed as the first buffer layer 2 on the single crystal substrate 1 (S2).
【００２８】次に、この単結晶基板１及び第１バッファ
層２を２５０℃〜７５０℃で３〜７時間真空焼鈍する
（Ｓ３）。Next, the single crystal substrate 1 and the first buffer layer 2 are annealed in a vacuum at 250 ° C. to 750 ° C. for 3 to 7 hours (S3).
【００２９】次に、第２バッファ層６を形成する場合は
（Ｓ４にてイエスの場合）、第１バッファ層２上に第２
バッファ層６として室温で５ｎｍ〜２０ｎｍの立方格子
金属の単結晶膜を形成する（Ｓ５）。Next, when forming the second buffer layer 6 (Yes in S4), the second buffer layer 6 is formed on the first buffer layer 2.
A single crystal film of a cubic lattice metal of 5 nm to 20 nm is formed at room temperature as the buffer layer 6 (S5).
【００３０】次に、第２バッファ層６上に立方格子金属
の単結晶膜からなる磁性層と非磁性層のペアを１０〜５
０回積層して人工格子５を形成する（Ｓ６）。Next, a pair of a magnetic layer and a non-magnetic layer made of a single crystal film of a cubic lattice metal is formed on the second buffer layer 6 by 10 to 5 minutes.
The artificial lattice 5 is formed by laminating 0 times (S6).
【００３１】一方、Ｓ４にて第２バッファ層６を形成し
ない場合は（Ｓ４にてノーの場合）、Ｓ３に続いてＳ６
の処理を行う。On the other hand, when the second buffer layer 6 is not formed in S4 (No in S4), S6 follows S3.
Is performed.
【００３２】なお、第２バッファ層６の形成を省略して
も本発明の目的は達成される。The object of the present invention is achieved even if the formation of the second buffer layer 6 is omitted.
【００３３】次に、実施例について説明する。Next, an embodiment will be described.
【００３４】[0034]
【実施例】本発明の実施に当たっては、超高真空電子ビ
ーム蒸着装置（到達真空度は１×１０−１０トール）を
用いた。図３は超高真空電子ビーム蒸着装置の一例の構
成図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS In carrying out the present invention, an ultra-high vacuum electron beam evaporation apparatus (attained vacuum of 1.times.10.sup.-10 torr) was used. FIG. 3 is a configuration diagram of an example of an ultrahigh vacuum electron beam evaporation apparatus.
【００３５】超高真空電子ビーム蒸着装置１０の真空チ
ャンバー１１内には、基板加熱用ヒータ１２と、蒸着速
度をモニターするための水晶振動子膜厚計１３と、基板
１上に成長した膜の表面構造評価を行うための反射高速
電子線回折（ＲＨＥＥＤ）用の電子銃１４と、蛍光スク
リーン１５と、シャッタ１６〜２１と、蒸着源２２〜２
６（２４〜２６は３連）と、ノーブルポンプ２７と、導
入室２８とが設けられている。In a vacuum chamber 11 of the ultra-high vacuum electron beam evaporation apparatus 10, a heater 12 for heating a substrate, a quartz crystal film thickness meter 13 for monitoring a deposition rate, and a film An electron gun 14 for reflection high-energy electron diffraction (RHEED) for evaluating the surface structure, a fluorescent screen 15, shutters 16 to 21, and evaporation sources 22 to 2
6 (three for 24-26), a noble pump 27, and an introduction chamber 28 are provided.
【００３６】蒸着時の真空度は１０-9トール台であり、
膜成長速度は０．０１〜０．０２ｎｍ／ｓとした。The degree of vacuum at the time of vapor deposition is on the order of 10 -9 torr,
The film growth rate was 0.01 to 0.02 nm / s.
【００３７】この超高真空電子ビーム蒸着装置１０の機
能を簡単に説明すると、まず蒸着源２２として磁性層３
用の金属、蒸着源２３として非磁性層４用の金属、蒸着
源２４〜２６として第１及び第２バッファ２，６用の金
属が配置される。The function of the ultra-high vacuum electron beam evaporation apparatus 10 will be briefly described.
And a metal for the nonmagnetic layer 4 as the vapor deposition source 23, and a metal for the first and second buffers 2 and 6 as the vapor deposition sources 24-26.
【００３８】又、基板１はヒータ１２により加熱され、
この基板１上に第１バッファ層２を形成する場合は、シ
ャッタ１９〜２１のいずれかを開き、蒸着源２４〜２６
のいずれかを基板１上に蒸着する。The substrate 1 is heated by the heater 12,
When forming the first buffer layer 2 on the substrate 1, one of the shutters 19 to 21 is opened and the evaporation sources 24 to 26 are opened.
Is deposited on the substrate 1.
【００３９】次に、第１バッファ層２上に第２バッファ
層６を形成する場合も、シャッタ１９〜２１のいずれか
を開き、蒸着源２４〜２６のいずれかを第１バッファ層
２上に蒸着する。Next, also when forming the second buffer layer 6 on the first buffer layer 2, one of the shutters 19 to 21 is opened, and one of the evaporation sources 24 to 26 is placed on the first buffer layer 2. Evaporate.
【００４０】次に、第２バッファ層６上に磁性層３を形
成する場合は、シャッタ１７を開き、蒸着源２２を第２
バッファ層６上に蒸着する。Next, when forming the magnetic layer 3 on the second buffer layer 6, the shutter 17 is opened and the evaporation source 22 is switched to the second
It is deposited on the buffer layer 6.
【００４１】次に、磁性層３上に非磁性層４を形成する
場合は、シャッタ１８を開き、蒸着源２３を磁性層３上
に蒸着する。Next, when the non-magnetic layer 4 is formed on the magnetic layer 3, the shutter 18 is opened, and the vapor deposition source 23 is vapor-deposited on the magnetic layer 3.
【００４２】磁気抵抗は、室温で磁場を膜面に平行に印
加し、直流４端子法により測定した。磁化は、振動試料
型磁力計を用いて室温で測定した。磁気トルクは膜面に
平行に１０ｋＯｅの磁場を印加して３６０度回転させる
ことによって測定した。The magnetic resistance was measured at room temperature by applying a magnetic field parallel to the film surface and by a DC four-terminal method. The magnetization was measured at room temperature using a vibrating sample magnetometer. The magnetic torque was measured by applying a magnetic field of 10 kOe parallel to the film surface and rotating the film 360 degrees.
【００４３】まず、第１実施例について説明する。図４
は第１実施例の処理工程を示すフローチャートである。First, the first embodiment will be described. FIG.
5 is a flowchart showing the processing steps of the first embodiment.
【００４４】超高真空電子ビーム蒸着装置１０を用い、
Ｃｏ／Ｃｕ人工格子膜を作製した。Using the ultra-high vacuum electron beam evaporation apparatus 10,
A Co / Cu artificial lattice film was produced.
【００４５】基板１としてＭｇＯ（００１）単結晶を用
いた。まず、ＭｇＯ基板１を４００℃に加熱する（Ｓ１
１）。As the substrate 1, an MgO (001) single crystal was used. First, the MgO substrate 1 is heated to 400 ° C. (S1
1).
【００４６】次に、このＭｇＯ基板１上に３．５ｎｍの
（体心立方格子金属である）Ｆｅバッファ層２を形成す
る（Ｓ１２）。Next, an Fe buffer layer 2 (which is a body-centered cubic lattice metal) of 3.5 nm is formed on the MgO substrate 1 (S12).
【００４７】次に、このＭｇＯ基板１及びＦｅバッファ
層２を４５０℃で５時間真空焼鈍する（Ｓ１３）。Next, the MgO substrate 1 and the Fe buffer layer 2 are subjected to vacuum annealing at 450 ° C. for 5 hours (S13).
【００４８】次に、室温で７ｎｍの（面心立方格子金属
である）Ｃｕバッファ層６をＦｅバッファ層２上に形成
する（Ｓ１４）。Next, a Cu buffer layer 6 (which is a face-centered cubic lattice metal) of 7 nm is formed on the Fe buffer layer 2 at room temperature (S14).
【００４９】次に、室温で膜厚１．７ｎｍの（面心立方
格子金属である）Ｃｏ磁性層３及び膜厚１．２ｎｍの
（面心立方格子金属である）Ｃｕ非磁性層４のペアを３
０回Ｃｕバッファ層６上に積層する（Ｓ１５）。Next, a pair of a 1.7 nm-thick Co magnetic layer 3 (which is a face-centered cubic lattice metal) and a 1.2 nm-thick (non-face-centered cubic lattice metal) Cu magnetic layer 4 at room temperature. 3
It is stacked on the Cu buffer layer 6 zero times (S15).
【００５０】以下、得られたこの人工格子膜を試料＃１
とする。ＲＨＥＥＤパターンとｘ線回折パターンによ
り、試料＃１が（００１）面がエピタキシャル成長した
単結晶膜であることを確かめた。Hereinafter, the obtained artificial lattice film was used as a sample # 1.
And From the RHEED pattern and the x-ray diffraction pattern, it was confirmed that Sample # 1 was a single crystal film in which the (001) plane was epitaxially grown.
【００５１】図５は試料＃１の室温でのトルク曲線図で
ある。磁場の初期印加方向（θ＝０度）は、ほぼ［１０
０］方向である。FIG. 5 is a torque curve diagram of Sample # 1 at room temperature. The initial application direction of the magnetic field (θ = 0 degrees) is approximately [10
0] direction.
【００５２】このトルク曲線図から、試料＃１は、［１
１０］方向を磁化容易軸とする４回対称の立方磁気異方
性をもつことが分かる。From the torque curve diagram, the sample # 1 is [1
It can be seen that the cubic magnetic anisotropy is four-fold symmetric with the [10] direction as the easy axis of magnetization.
【００５３】ここで、（００１）面、［１００］方向及
び［１１０］方向について説明する。これらは結晶学に
おける記号である。Here, the (001) plane, the [100] direction and the [110] direction will be described. These are symbols in crystallography.
【００５４】図６は（００１）面、［１００］方向及び
［１１０］方向の説明用模式図である。FIG. 6 is a schematic diagram for explaining the (001) plane, the [100] direction and the [110] direction.
【００５５】同図に示すように（００１）面とは、直方
体の上面をいい、［１００］方向はｘ軸方向、［０１
０］方向はｙ軸方向、［００１］方向はｚ軸方向をい
い、［１１０］方向は［０１０］方向と［１００］方向
との中間の方向をいう。As shown in the figure, the (001) plane refers to the upper surface of a rectangular parallelepiped, the [100] direction is the x-axis direction, and the [01] direction is the [01] direction.
The [0] direction refers to the y-axis direction, the [001] direction refers to the z-axis direction, and the [110] direction refers to an intermediate direction between the [010] direction and the [100] direction.
【００５６】次に、トルク曲線図について補足説明す
る。図７はトルク曲線図補足説明用模式図である。Next, a supplementary explanation of the torque curve diagram will be given. FIG. 7 is a schematic diagram for supplementary explanation of a torque curve diagram.
【００５７】本発明の人工格子５は図７に示すように
［１１０］方向（トルク曲線で４５度方向）が磁化容易
軸で、さらに９０度ずれた方向（トルク曲線で１３５度
方向）も磁化容易軸となる。As shown in FIG. 7, in the artificial lattice 5 of the present invention, the [110] direction (45 ° direction in the torque curve) is the easy axis of magnetization, and the direction shifted further by 90 ° (135 ° direction in the torque curve) is also magnetized. Easy axis.
【００５８】この人工格子５のトルク曲線は図５に示す
ように４５度、１３５度、２２５度及び３１５度でゼロ
となり、４回対称の立方磁気異方性を示す。As shown in FIG. 5, the torque curve of the artificial lattice 5 becomes zero at 45 degrees, 135 degrees, 225 degrees, and 315 degrees, indicating a cubic magnetic anisotropy with fourfold symmetry.
【００５９】図８及び図９は磁場対磁気抵抗比特性図で
ある。図８及び図９は、試料＃１の結晶磁気異方性の磁
化容易軸方向（［１１０］方向）と磁化困難軸方向
（［１００］方向）に磁場を印加したときの磁気抵抗比
の磁場依存性をそれぞれ示す。なお、測定電流は磁場の
印加方向と垂直である。FIGS. 8 and 9 are magnetic field versus magnetoresistance ratio characteristics. FIGS. 8 and 9 show the magnetic field of the magnetoresistance ratio when a magnetic field is applied in the easy axis direction ([110] direction) and the hard axis direction ([100] direction) of the crystal magnetic anisotropy of sample # 1. Dependencies are indicated. The measurement current is perpendicular to the direction in which the magnetic field is applied.
【００６０】図１０及び図１１は磁場対磁化特性図であ
る。図１０及び図１１は、試料＃１の結晶磁気異方性の
磁化容易軸方向（［１１０］方向）と磁化困難軸方向
（［１００］方向）に磁場を印加したときの磁化曲線を
それぞれ示す。FIGS. 10 and 11 are magnetic field versus magnetization characteristic diagrams. FIG. 10 and FIG. 11 show the magnetization curves of Sample # 1 when a magnetic field is applied in the easy axis direction ([110] direction) and the hard axis direction ([100] direction) of the magnetocrystalline anisotropy, respectively. .
【００６１】図８〜図１１より、試料＃１の飽和磁場
は、磁化容易軸方向で２００Ｏｅ、磁化困難軸方向で
１．５ｋＯｅであり、試料＃１の磁場感度は、磁化容易
軸方向で磁化困難軸方向より７倍以上向上していること
が分かる。8 to 11, the saturation magnetic field of the sample # 1 is 200 Oe in the easy axis direction and 1.5 kOe in the hard axis direction, and the magnetic field sensitivity of the sample # 1 is the magnetization in the easy axis direction. It can be seen that it is improved by 7 times or more than the hard axis direction.
【００６２】上記におけるような磁場感度の向上は、単
結晶基板をＳｉ（００１）に変えても同様な結果が得ら
れた。又、Ｆｅバッファ層２を同じ体心立方格子金属で
あるクロム（Ｃｒ）に変えても同様な結果が得られた。
さらに、人工格子の磁性層３と非磁性層４をそれぞれ体
心立方格子金属のＦｅとＣｒに変えても同様の結果が得
られた。The same result as described above was obtained by changing the single crystal substrate to Si (001). Similar results were obtained by changing the Fe buffer layer 2 to chromium (Cr), which is the same body-centered cubic lattice metal.
Further, similar results were obtained by changing the magnetic layer 3 and the nonmagnetic layer 4 of the artificial lattice to Fe and Cr of the body-centered cubic lattice metals, respectively.
【００６３】次に、第２実施例について説明する。第２
実施例は（００１）面がエピタキシャル成長したＣｏ／
Ｃｕ人工格子膜の磁気抵抗比に及ぼす人工格子のエピタ
キシャル性（Ｃｏ磁性層の単結晶性）の影響を調べたも
のである。Next, a second embodiment will be described. Second
In the example, Co / (001) plane was epitaxially grown.
It is an investigation of the effect of the epitaxial property of the artificial lattice (single crystallinity of the Co magnetic layer) on the magnetoresistance ratio of the Cu artificial lattice film.
【００６４】まず、その説明に入る前にｘ線回折パタン
及びロッキングカーブについて簡単に説明する。図１２
はｘ線回折パタン説明用模式図である。First, an x-ray diffraction pattern and a rocking curve will be briefly described before starting the description. FIG.
FIG. 3 is a schematic diagram for explaining an x-ray diffraction pattern.
【００６５】図１２に示すように、ｘ線回折は試料にｘ
線を入射して反射してくるｘ線の強度（図１３の縦軸）
を観測するものである。As shown in FIG. 12, x-ray diffraction was
The intensity of the x-ray that is incident upon and reflected by the ray (vertical axis in FIG. 13)
Is observed.
【００６６】その際、試料と入射ｘ線とのなす角θ（観
測する反射ｘ線と試料とのなす角も同じθに固定）を変
化させながら観測する。図１２の横軸２θはその変化量
を示す。このようなｘ線の測定方法をθ−２θ測定とい
う。At this time, observation is performed while changing the angle θ between the sample and the incident x-ray (the angle between the reflected x-ray to be observed and the sample is fixed to the same θ). The horizontal axis 2θ in FIG. 12 indicates the amount of change. Such an x-ray measurement method is referred to as θ-2θ measurement.
【００６７】一方、ロッキングカーブはこの測定方法と
異なり、２θを固定したまま試料だけを回転させて測定
する方法である。この方法は、試料のエピタキシャル性
を調べるのに使用される。On the other hand, the rocking curve is different from this measuring method in that only the sample is rotated while 2θ is fixed and measured. This method is used to determine the epitaxial nature of a sample.
【００６８】Ｃｏ／Ｃｕ人工格子膜の（００１）面に対
応するピークに関して、ロッキングカーブを測定した。A rocking curve was measured for a peak corresponding to the (001) plane of the Co / Cu artificial lattice film.
【００６９】図１３は磁気抵抗比、飽和磁場等を試料別
に記録した図である。図１３に、Ｃｏ／Ｃｕ人工格子膜
の磁気抵抗比とＣｏ／Ｃｕ人工格子膜の（００１）面に
対応するピークのロッキングカーブにおける半値幅Δω
との関係をまとめた。FIG. 13 is a diagram in which the magnetoresistance ratio, the saturation magnetic field and the like are recorded for each sample. FIG. 13 shows the magnetoresistance ratio of the Co / Cu artificial lattice film and the half width Δω in the rocking curve of the peak corresponding to the (001) plane of the Co / Cu artificial lattice film.
I summarized the relationship with.
【００７０】一般に、半値幅Δωが小さくなる程、人工
格子のエピタキシャル性（単結晶性）は向上する。In general, the smaller the half width Δω, the better the epitaxial property (single crystal property) of the artificial lattice.
【００７１】次に、Ｃｏ／Ｃｕ人工格子膜の磁気抵抗比
に及ぼす人工格子のＣｏ／Ｃｕ界面の平坦性の影響を調
べた。図１４は低角ｘ線回折パタン図である。縦軸はｘ
線の強度（ａ．ｕ．）、横軸はｘ線の反射角２θ（度；
ｄｅｇ）を示す。Next, the influence of the flatness of the Co / Cu interface of the artificial lattice on the magnetoresistance ratio of the Co / Cu artificial lattice film was examined. FIG. 14 is a low-angle x-ray diffraction pattern diagram. The vertical axis is x
Line intensity (au), the horizontal axis is the x-ray reflection angle 2θ (degrees;
deg).
【００７２】試料＃１では、人工格子の周期性と界面の
平坦性の良さを反映して、４次のピークまで観測されて
いる。同図に、１次ピークを３１、２次ピークを３２、
３次ピークを３３、４次ピークを３４で示す。In sample # 1, up to the fourth peak is observed, reflecting the periodicity of the artificial lattice and the good flatness of the interface. In the figure, the primary peak is 31, the secondary peak is 32,
The third peak is indicated by 33 and the fourth peak by 34.
【００７３】一般に、人工格子の界面の平坦性がよいほ
ど、より高次までピークが観測される。Generally, the higher the flatness of the interface of the artificial lattice, the higher the peak is observed.
【００７４】次に、図１３に、Ｃｏ／Ｃｕ人工格子膜の
磁気抵抗比とＣｏ／Ｃｕ人工格子膜の低角の１次のピー
ク強度Ｉ1 に対する４次のピーク強度Ｉ4 の割合（Ｉ4
／Ｉ1 ）との関係をまとめた。Next, FIG. 13 shows the magnetoresistance ratio of the Co / Cu artificial lattice film and the ratio of the fourth-order peak intensity I 4 to the low-angle first-order peak intensity I 1 of the Co / Cu artificial lattice film (I Four
/ I 1 ).
【００７５】又、図１５に、Ｃｏ／Ｃｕ人工格子膜の磁
気抵抗比、Ｃｏ／Ｃｕ人工格子膜の（００１）面に対応
するピークのロッキングカーブにおける半値幅Δωの逆
数、及び、Ｉ4 ／Ｉ1 との間の相関を示す。FIG. 15 shows the magnetoresistance ratio of the Co / Cu artificial lattice film, the reciprocal of the half width Δω in the rocking curve of the peak corresponding to the (001) plane of the Co / Cu artificial lattice film, and I 4 / 2 shows the correlation with I 1 .
【００７６】ロッキングカーブの半値幅Δωが小さくな
る（逆数１／Δωが大きくなる）ほど、人工格子のエピ
タキシャル性はよくなり、Ｉ4 ／Ｉ1 が大きくなるほ
ど、人工格子の界面の平坦性はよくなる。As the half width Δω of the rocking curve decreases (the reciprocal 1 / Δω increases), the epitaxial property of the artificial lattice improves, and as I 4 / I 1 increases, the flatness of the interface of the artificial lattice improves. .
【００７７】従って、図１５に示すように、１／Δωと
Ｉ4 ／Ｉ1 とが増加するにつれて磁気抵抗比が大きくな
ることから、「エピタキシャル性と平坦性がよいほど、
磁気抵抗比が大きくなる」といえる。Therefore, as shown in FIG. 15, the magnetoresistance ratio increases as 1 / Δω and I 4 / I 1 increase.
The magnetoresistance ratio increases. "
【００７８】次に、第３実施例について説明する。第３
実施例は（００１）面がエピタキシャル成長したＣｏ／
Ｃｕ人工格子膜の飽和磁場に及ぼす人工格子の結晶磁気
異方性の影響を調べたものである。トルク曲線の振幅か
ら磁気異方性定数の大きさを求めた。Next, a third embodiment will be described. Third
In the example, Co / (001) plane was epitaxially grown.
It is an examination of the effect of the crystal magnetic anisotropy of the artificial lattice on the saturation magnetic field of the Cu artificial lattice film. The magnitude of the magnetic anisotropy constant was determined from the amplitude of the torque curve.
【００７９】図１３にＣｏ／Ｃｕ人工格子膜の飽和磁場
と磁気異方性定数の大きさとの関係をまとめた。図１３
から分かるように、異方性定数の大きさが最大の時（試
料＃１）、飽和磁場が最小になる（２００Ｏｅ）が、磁
気抵抗比が１０％未満の試料（＃２，＃３，＃５，＃
９）では、異方性定数の大きさと飽和磁場との相関がな
くなる。FIG. 13 summarizes the relationship between the saturation magnetic field of the Co / Cu artificial lattice film and the magnitude of the magnetic anisotropy constant. FIG.
As can be seen from the graph, when the magnitude of the anisotropy constant is maximum (sample # 1), the saturation magnetic field becomes minimum (200 Oe), but the samples (# 2, # 3, ##) having a magnetoresistance ratio of less than 10% are obtained. 5, #
In 9), there is no correlation between the magnitude of the anisotropic constant and the saturation magnetic field.
【００８０】このことは、飽和磁場の減少に対しても、
Ｃｏ／Ｃｕ人工格子膜の（００１）面のエピタキシャル
性とＣｏ／Ｃｕ界面の平坦性が重要であることを示して
いる。This means that the reduction of the saturation magnetic field
This indicates that the epitaxial property of the (001) plane of the Co / Cu artificial lattice film and the flatness of the Co / Cu interface are important.
【００８１】次に、実施例４について説明する。図１６
は実施例４の処理工程を示すフローチャートである。Next, a fourth embodiment will be described. FIG.
9 is a flowchart illustrating processing steps of a fourth embodiment.
【００８２】実施例１と同様にして、基板１としてＭｇ
Ｏ（００１）単結晶を用いた。まず、ＭｇＯ基板１を６
００℃に加熱する（Ｓ２１）。In the same manner as in Example 1, Mg
An O (001) single crystal was used. First, the MgO substrate 1
Heat to 00 ° C (S21).
【００８３】次に、このＭｇＯ基板１上に５ｎｍの（面
心立方格子金属である）Ｐｔバッファ層２を形成する
（Ｓ２２）。Next, a 5 nm (face-centered cubic lattice metal) Pt buffer layer 2 is formed on the MgO substrate 1 (S22).
【００８４】次に、このＭｇＯ基板１及びＰｔバッファ
層２を４５０℃で４〜５時間真空焼鈍する（Ｓ２３）。Next, the MgO substrate 1 and the Pt buffer layer 2 are annealed in a vacuum at 450 ° C. for 4 to 5 hours (S23).
【００８５】次に、室温で７ｎｍの（面心立方格子金属
である）Ｃｕバッファ層６をＰｔバッファ層２上に形成
する（Ｓ２４）。Next, a Cu buffer layer 6 (which is a face-centered cubic lattice metal) of 7 nm is formed on the Pt buffer layer 2 at room temperature (S24).
【００８６】次に、室温で膜厚１．７ｎｍの（面心立方
格子金属である）Ｃｏ磁性層３及び膜厚１．２ｎｍの
（面心立方格子金属である）Ｃｕ非磁性層４のペアを３
０回Ｃｕバッファ層６上に積層する（Ｓ２５）。Next, a pair of a 1.7 nm-thick Co magnetic layer 3 (which is a face-centered cubic lattice metal) and a 1.2 nm thick Cu non-magnetic layer 4 (which is a face-centered cubic lattice metal) at room temperature. 3
It is laminated on the Cu buffer layer 6 0 times (S25).
【００８７】以下、得られたこの人工格子膜を試料＃１
０とする。ＲＨＥＥＤパターンとｘ線回折パターンによ
り、試料＃１０が（００１）面がエピタキシャル成長し
た単結晶膜であることを確かめた。Hereinafter, the obtained artificial lattice film was used as a sample # 1.
Set to 0. From the RHEED pattern and the x-ray diffraction pattern, it was confirmed that Sample # 10 was a single crystal film in which the (001) plane was epitaxially grown.
【００８８】又、室温でのトルク測定により、試料＃１
０が［１１０］方向を磁化容易軸とする４回対称の立方
磁気異方性をもつことがわかった。The torque of the sample # 1 was measured at room temperature.
It was found that 0 had a cubic magnetic anisotropy of four times symmetry with the [110] direction as the easy axis of magnetization.
【００８９】図１７及び図１８は磁場対磁気抵抗比特性
図である。図１７及び図１８は、試料＃１０の結晶磁気
異方性の磁化容易軸方向（［１１０］方向）と磁化困難
軸方向（［１００］方向）に磁場を印加したときの磁気
抵抗比の磁場依存性をそれぞれ示す。測定電流は磁場の
印加方向と垂直である。FIGS. 17 and 18 are magnetic field versus magnetoresistance ratio characteristics. FIGS. 17 and 18 show the magnetic field of the magnetoresistance ratio when a magnetic field is applied in the easy axis direction ([110] direction) and the hard axis direction ([100] direction) of the crystal magnetic anisotropy of sample # 10. Dependencies are indicated. The measurement current is perpendicular to the direction of application of the magnetic field.
【００９０】又、図１９及び図２０は磁場対磁化特性図
である。図１９と図２０は、試料＃１０の結晶磁気異方
性の磁化容易軸方向（［１１０］方向）と磁化困難軸方
向（［１００］方向）に磁場を印加したときの磁化曲線
をそれぞれ示す。FIGS. 19 and 20 are magnetic field versus magnetization characteristic diagrams. FIGS. 19 and 20 show magnetization curves of the sample # 10 when a magnetic field is applied in the easy axis direction ([110] direction) and the hard axis direction ([100] direction) of the crystal magnetic anisotropy, respectively. .
【００９１】図１７〜図２０より、試料＃１０の飽和磁
場は、磁化容易軸方向で３００Ｏｅ、磁化困難軸方向で
１．５ｋＯｅであり、試料＃１０の磁場感度は、磁化容
易軸方向で磁化困難軸方向より５倍向上している。17 to 20, the saturation magnetic field of sample # 10 is 300 Oe in the easy axis direction and 1.5 kOe in the hard axis direction, and the magnetic field sensitivity of sample # 10 is the magnetization in the easy axis direction. 5 times higher than in the hard axis direction.
【００９２】上記におけるような磁場感度の向上は、単
結晶基板をＳｉ（００１）に変えても同様な結果が得ら
れた。また、Ｐｔバッファ層を同じ面心立方格子金属で
あるパラジウム（Ｐｄ）に変えても同様な結果が得られ
た。The same improvement in the magnetic field sensitivity as described above was obtained even when the single crystal substrate was changed to Si (001). Similar results were obtained by changing the Pt buffer layer to palladium (Pd), which is the same face-centered cubic lattice metal.
【００９３】次に、第５実施例について説明する。第５
実施例では、実施例２と同様にＰｔをバッファ層とする
（００１）面がエピタキシャル成長したＣｏ／Ｃｕ人工
格子膜の磁気抵抗比に及ぼす人工格子のエピタキシャル
性（Ｃｏ磁性層の単結晶性）とＣｏ／Ｃｕ界面の平坦性
の影響を調べた。Next, a fifth embodiment will be described. Fifth
In the embodiment, the epitaxial property of the artificial lattice (the single crystallinity of the Co magnetic layer) affects the magnetoresistance ratio of the Co / Cu artificial lattice film in which the (001) plane with Pt as the buffer layer is epitaxially grown, as in the second embodiment. The influence of the flatness of the Co / Cu interface was examined.
【００９４】図２１は磁気抵抗比、飽和磁場等を試料別
に記録した図である。図２１に、Ｃｏ／Ｃｕ人工格子膜
の磁気抵抗比とＣｏ／Ｃｕ人工格子膜の（００１）面に
対応するピークのロッキングカーブにおける半値幅Δ
ω、及び、Ｉ4 ／Ｉ1 との関係をまとめた。FIG. 21 is a diagram in which the magnetoresistance ratio, the saturation magnetic field and the like are recorded for each sample. FIG. 21 shows the magnetoresistance ratio of the Co / Cu artificial lattice film and the half width Δ in the rocking curve of the peak corresponding to the (001) plane of the Co / Cu artificial lattice film.
The relationship between ω and I 4 / I 1 was summarized.
【００９５】試料＃１０の低角ｘ線回折パターンを図１
４（ｂ）に示す。同図から分かるように、Ｐｔをバッフ
ァ層としたＣｏ／Ｃｕ人工格子膜においても、その（０
０１）面のエピタキシャル性とＣｏ／Ｃｕ界面の平坦性
がよい程、磁気抵抗比が大きくなるといえる。FIG. 1 shows the low-angle x-ray diffraction pattern of sample # 10.
This is shown in FIG. As can be seen from the figure, even in the Co / Cu artificial lattice film using Pt as the buffer layer, the (0
It can be said that the better the epitaxial property of the (01) plane and the flatness of the Co / Cu interface, the higher the magnetoresistance ratio.
【００９６】同図に、１次ピークを４１、２次ピークを
４２、３次ピークを４３、４次ピークを４４で示す。In the figure, the first peak is indicated by 41, the second peak is indicated by 42, the third peak is indicated by 43, and the fourth peak is indicated by 44.
【００９７】次に、第６実施例について説明する。第６
実施例では、実施例３と同様に、（００１）面がエピタ
キシャル成長したＣｏ／Ｃｕ人工格子膜の飽和磁場に及
ぼす人工格子の結晶磁気異方性の影響を調べた。トルク
曲線の振幅から磁気異方性定数の大きさを求めた。Next, a sixth embodiment will be described. Sixth
In the example, as in the example 3, the influence of the crystal magnetic anisotropy of the artificial lattice on the saturation magnetic field of the Co / Cu artificial lattice film having the (001) plane epitaxially grown was examined. The magnitude of the magnetic anisotropy constant was determined from the amplitude of the torque curve.
【００９８】図２１に、Ｃｏ／Ｃｕ人工格子膜の飽和磁
場と磁気異方性定数の大きさとの関係をまとめた。図２
１から分かるように、異方性定数の大きさが最大の時
（試料＃１０）、飽和磁場が最小になる（３００Ｏｅ）
が、磁気抵抗比が１０％未満の試料では、異方性定数の
大きさと飽和磁場との相関がなくなる。FIG. 21 summarizes the relationship between the saturation magnetic field of the Co / Cu artificial lattice film and the magnitude of the magnetic anisotropy constant. FIG.
As can be seen from FIG. 1, when the magnitude of the anisotropy constant is maximum (sample # 10), the saturation magnetic field becomes minimum (300 Oe).
However, in a sample having a magnetoresistance ratio of less than 10%, there is no correlation between the magnitude of the anisotropic constant and the saturation magnetic field.
【００９９】このことは、飽和磁場の減少に対しても、
Ｃｏ／Ｃｕ人工格子膜の（００１）面のエピタキシャル
性とＣｏ／Ｃｕ界面の平坦性が重要であることを示して
いる。This means that the decrease in the saturation magnetic field
This indicates that the epitaxial property of the (001) plane of the Co / Cu artificial lattice film and the flatness of the Co / Cu interface are important.
【０１００】[0100]
【発明の効果】本発明によれば、磁性層と非磁性層とを
交互に積層させた人工格子膜を含む磁気抵抗効果膜であ
って、前記磁性層は単結晶化された磁性層で形成される
ため、磁性層間に反強磁性相互作用が働く人工格子膜の
磁気抵抗比を下げることなく、飽和磁場を下げて磁場感
度を上げることができる。According to the present invention, there is provided a magnetoresistance effect film including an artificial lattice film in which magnetic layers and nonmagnetic layers are alternately laminated, wherein the magnetic layer is formed of a single-crystallized magnetic layer. Therefore, the saturation magnetic field can be reduced and the magnetic field sensitivity can be increased without lowering the magnetoresistance ratio of the artificial lattice film in which antiferromagnetic interaction acts between the magnetic layers.
【０１０１】又、本発明による他の発明によれば、磁性
層と非磁性層とを交互に積層させた人工格子膜を含む磁
気抵抗効果膜の製造方法であって、その方法は前記磁性
層を単結晶化する第１工程を含むため、磁性層間に反強
磁性相互作用が働く人工格子膜の磁気抵抗比を下げるこ
となく、飽和磁場を下げて磁場感度を上げることができ
る。According to another aspect of the present invention, there is provided a method for manufacturing a magnetoresistive effect film including an artificial lattice film in which magnetic layers and nonmagnetic layers are alternately stacked, the method comprising: Since the first step of single crystallizing is performed, the saturation magnetic field can be reduced and the magnetic field sensitivity can be increased without lowering the magnetoresistance ratio of the artificial lattice film in which antiferromagnetic interaction acts between the magnetic layers.
【図１】本発明に係る磁気抵抗効果膜の第１の実施の形
態の断面図である。FIG. 1 is a sectional view of a first embodiment of a magnetoresistive film according to the present invention.
【図２】第２の実施の形態の処理工程を示すフローチャ
ートである。FIG. 2 is a flowchart illustrating processing steps according to a second embodiment.
【図３】超高真空電子ビーム蒸着装置の一例の構成図で
ある。FIG. 3 is a configuration diagram of an example of an ultra-high vacuum electron beam evaporation apparatus.
【図４】第１実施例の処理工程を示すフローチャートで
ある。FIG. 4 is a flowchart showing processing steps of the first embodiment.
【図５】試料＃１の室温でのトルク曲線図である。FIG. 5 is a torque curve diagram of Sample # 1 at room temperature.
【図６】（００１）面、［１００］方向及び［１１０］
方向の説明用模式図である。FIG. 6: (001) plane, [100] direction and [110]
It is an explanatory schematic diagram of a direction.
【図７】トルク曲線図補足説明用模式図である。FIG. 7 is a schematic diagram for supplementary explanation of a torque curve diagram.
【図８】磁場対磁気抵抗比特性図である。FIG. 8 is a characteristic diagram of a magnetic field versus a magnetoresistance ratio.
【図９】磁場対磁気抵抗比特性図である。FIG. 9 is a characteristic diagram of a magnetic field versus a magnetoresistance ratio.
【図１０】磁場対磁化特性図である。FIG. 10 is a diagram showing a magnetic field versus magnetization characteristic.
【図１１】磁場対磁化特性図である。FIG. 11 is a diagram showing magnetic field versus magnetization characteristics.
【図１２】ｘ線回折パタン説明用模式図である。FIG. 12 is a schematic diagram for explaining an x-ray diffraction pattern.
【図１３】磁気抵抗比、飽和磁場等を試料別に記録した
図である。FIG. 13 is a diagram in which a magnetoresistance ratio, a saturation magnetic field, and the like are recorded for each sample.
【図１４】低角ｘ線回折パタン図である。FIG. 14 is a low-angle x-ray diffraction pattern diagram.
【図１５】磁気抵抗比、ロッキングカーブにおける半値
幅Δωの逆数及びＩ4 ／Ｉ1 の相関を示す図である。FIG. 15 is a diagram showing the correlation between the magnetoresistance ratio, the reciprocal of the half width Δω in the rocking curve, and I 4 / I 1 .
【図１６】実施例４の処理工程を示すフローチャートで
ある。FIG. 16 is a flowchart illustrating processing steps according to a fourth embodiment.
【図１７】磁場対磁気抵抗比特性図である。FIG. 17 is a graph showing a magnetic field versus magnetoresistance ratio characteristic.
【図１８】磁場対磁気抵抗比特性図である。FIG. 18 is a diagram showing a magnetic field versus magnetoresistance ratio characteristic.
【図１９】磁場対磁化特性図である。FIG. 19 is a diagram showing magnetic field versus magnetization characteristics.
【図２０】磁場対磁化特性図である。FIG. 20 is a diagram showing a magnetic field versus magnetization characteristic.
【図２１】磁気抵抗比、飽和磁場等を試料別に記録した
図である。FIG. 21 is a diagram in which a magnetoresistance ratio, a saturation magnetic field, and the like are recorded for each sample.
１ 基板 ２ 第１バッファ層 ３ 磁性層 ４ 非磁性層 ５ 人工格子膜 ６ 第２バッファ層 Reference Signs List 1 substrate 2 first buffer layer 3 magnetic layer 4 nonmagnetic layer 5 artificial lattice film 6 second buffer layer
Claims (28)
人工格子膜を含む磁気抵抗効果膜であって、 前記磁性層は単結晶化された磁性層で形成されることを
特徴とする磁気抵抗効果膜。1. A magnetoresistance effect film including an artificial lattice film in which magnetic layers and nonmagnetic layers are alternately stacked, wherein the magnetic layer is formed of a single-crystallized magnetic layer. Magnetoresistive film.
で形成されることを特徴とする請求項１記載の磁気抵抗
効果膜。2. The magnetoresistive film according to claim 1, wherein said nonmagnetic layer is formed of a single crystallized nonmagnetic layer.
ァ層と、このバッファ層上に設けられた前記人工格子膜
とからなることを特徴とする請求項１又は２記載の磁気
抵抗効果膜。3. The magnetoresistive film according to claim 1, comprising a substrate, a buffer layer provided on the substrate, and the artificial lattice film provided on the buffer layer. .
第２バッファ層からなることを特徴とする請求項３記載
の磁気抵抗効果膜。4. The magnetoresistive film according to claim 3, wherein said buffer layer comprises first and second buffer layers made of different materials.
金属の単結晶膜で形成され、前記磁性層及び非磁性層は
立方格子金属の単結晶膜で形成されることを特徴とする
請求項３記載の磁気抵抗効果膜。5. The method according to claim 1, wherein the buffer layer is formed of a single-crystal film of a body-centered or face-centered cubic lattice metal, and the magnetic layer and the nonmagnetic layer are formed of a single-crystal film of a cubic lattice metal. Item 4. A magnetoresistive film according to item 3.
格子金属の単結晶膜で形成され、前記第２バッファ層は
立方格子金属の単結晶膜で形成され、前記磁性層及び非
磁性層は立方格子金属の単結晶膜で形成されることを特
徴とする請求項４記載の磁気抵抗効果膜。6. The first buffer layer is formed of a single-crystal film of a body-centered or face-centered cubic lattice metal, and the second buffer layer is formed of a single-crystal film of a cubic lattice metal. 5. The magnetoresistive film according to claim 4, wherein the layer is formed of a cubic lattice metal single crystal film.
単結晶で形成され、前記バッファ層は鉄（Ｆｅ）で形成
され、前記磁性層はコバルト（Ｃｏ）で形成され、前記
非磁性層は銅（Ｃｕ）で形成されることを特徴とする請
求項３又は５記載の磁気抵抗効果膜。7. The substrate is made of magnesium oxide (MgO).
The buffer layer is formed of iron (Fe), the magnetic layer is formed of cobalt (Co), and the nonmagnetic layer is formed of copper (Cu). 6. The magnetoresistive film according to 3 or 5.
成され、前記バッファ層はクロム（Ｃｒ）で形成され、
前記磁性層は鉄（Ｆｅ）で形成され、前記非磁性層はク
ロム（Ｃｒ）で形成されることを特徴とする請求項３又
は５記載の磁気抵抗効果膜。8. The substrate is formed of silicon (Si) single crystal, the buffer layer is formed of chromium (Cr),
The magnetoresistive film according to claim 3, wherein the magnetic layer is formed of iron (Fe), and the nonmagnetic layer is formed of chromium (Cr).
単結晶で形成され、前記第１バッファ層は鉄（Ｆｅ）で
形成され、前記第２バッファ層は銅（Ｃｕ）で形成さ
れ、前記磁性層はコバルト（Ｃｏ）で形成され、前記非
磁性層は銅（Ｃｕ）で形成されることを特徴とする請求
項４又は６記載の磁気抵抗効果膜。9. The method according to claim 1, wherein the substrate is magnesium oxide (MgO).
The first buffer layer is formed of iron (Fe), the second buffer layer is formed of copper (Cu), the magnetic layer is formed of cobalt (Co), and the non-magnetic layer is formed of single crystal. 7. The magnetoresistive effect film according to claim 4, wherein is formed of copper (Cu).
形成され、前記第１バッファ層はクロム（Ｃｒ）で形成
され、前記第２バッファ層は銅（Ｃｕ）で形成され、前
記磁性層は鉄（Ｆｅ）で形成され、前記非磁性層はクロ
ム（Ｃｒ）で形成されることを特徴とする請求項４又は
６記載の磁気抵抗効果膜。10. The substrate is formed of silicon (Si) single crystal, the first buffer layer is formed of chromium (Cr), the second buffer layer is formed of copper (Cu), and the magnetic layer is formed of 7. The magnetoresistive film according to claim 4, wherein the nonmagnetic layer is formed of iron (Fe), and the nonmagnetic layer is formed of chromium (Cr).
Ｏ）単結晶で形成され、前記バッファ層は白金（Ｐｔ）
で形成され、前記磁性層はコバルト（Ｃｏ）で形成さ
れ、前記非磁性層は銅（Ｃｕ）で形成されることを特徴
とする請求項３又は５記載の磁気抵抗効果膜。11. The substrate is made of magnesium oxide (Mg).
O) a single crystal, wherein the buffer layer is platinum (Pt)
6. The magnetoresistive film according to claim 3, wherein the magnetic layer is formed of cobalt (Co), and the nonmagnetic layer is formed of copper (Cu).
形成され、前記バッファ層はパラジウム（Ｐｄ）で形成
され、前記磁性層はコバルト（Ｃｏ）で形成され、前記
非磁性層は銅（Ｃｕ）で形成されることを特徴とする請
求項３又は５記載の磁気抵抗効果膜。12. The substrate is formed of silicon (Si) single crystal, the buffer layer is formed of palladium (Pd), the magnetic layer is formed of cobalt (Co), and the nonmagnetic layer is copper (Cu). 6. The magnetoresistive film according to claim 3, wherein the magnetoresistive effect film is formed by:
Ｏ）単結晶で形成され、前記第１バッファ層は白金（Ｐ
ｔ）で形成され、前記第２バッファ層は銅（Ｃｕ）で形
成され、前記磁性層はコバルト（Ｃｏ）で形成され、前
記非磁性層は銅（Ｃｕ）で形成されることを特徴とする
請求項４又は６記載の磁気抵抗効果膜。13. The method according to claim 1, wherein the substrate is made of magnesium oxide (Mg).
O) single crystal, and the first buffer layer is formed of platinum (P
t), wherein the second buffer layer is formed of copper (Cu), the magnetic layer is formed of cobalt (Co), and the nonmagnetic layer is formed of copper (Cu). The magnetoresistive film according to claim 4.
形成され、前記第１バッファ層はパラジウム（Ｐｄ）で
形成され、前記第２バッファ層は銅（Ｃｕ）で形成さ
れ、前記磁性層はコバルト（Ｃｏ）で形成され、前記非
磁性層は銅（Ｃｕ）で形成されることを特徴とする請求
項４又は６記載の磁気抵抗効果膜。14. The substrate is made of silicon (Si) single crystal, the first buffer layer is made of palladium (Pd), the second buffer layer is made of copper (Cu), and the magnetic layer is 7. The magnetoresistive film according to claim 4, wherein the nonmagnetic layer is formed of cobalt (Co), and the nonmagnetic layer is formed of copper (Cu).
た人工格子膜を含む磁気抵抗効果膜の製造方法であっ
て、 前記磁性層を単結晶化する第１工程を含むことを特徴と
する磁気抵抗効果膜の製造方法。15. A method for manufacturing a magnetoresistive film including an artificial lattice film in which magnetic layers and nonmagnetic layers are alternately stacked, comprising a first step of monocrystallizing the magnetic layer. A method for manufacturing a magnetoresistive film.
することも含まれることを特徴とする請求項１５記載の
磁気抵抗効果膜の製造方法。16. The method according to claim 15, wherein the first step includes single crystallizing the non-magnetic layer.
工程と、この第２工程の次に前記基板上にバッファ層を
形成する第３工程と、この第３工程の次に前記バッファ
層上に単結晶化された前記磁性層及び前記非磁性層を形
成する第４工程とからなることを特徴とする請求項１５
又は１６記載の磁気抵抗効果膜の製造方法。17. The method according to claim 17, wherein the first step includes heating a substrate.
A step of forming a buffer layer on the substrate after the second step; and a step of forming the single crystallized magnetic layer and the non-magnetic layer on the buffer layer after the third step. 16. The method according to claim 15, comprising a fourth step of forming.
17. A method for producing a magnetoresistive film according to item 16.
する第５工程と、第２バッファ層を形成する第６工程と
からなることを特徴とする請求項１７記載の磁気抵抗効
果膜の製造方法。18. The magnetoresistive film according to claim 17, wherein said third step includes a fifth step of forming a first buffer layer and a sixth step of forming a second buffer layer. Production method.
層は体心又は面心立方格子金属の単結晶膜であり、前記
第４工程にて形成された磁性層及び非磁性層は立方格子
金属の単結晶膜であることを特徴とする請求項１７記載
の磁気抵抗効果膜の製造方法。19. The buffer layer formed in the third step is a single crystal film of a body-centered or face-centered cubic lattice metal, and the magnetic layer and the non-magnetic layer formed in the fourth step are cubic lattices. 18. The method according to claim 17, wherein the method is a metal single crystal film.
ファ層は体心又は面心立方格子金属の単結晶膜であり、
前記第６工程にて形成された第２バッファ層は立方格子
金属の単結晶膜であり、前記第４工程にて形成された磁
性層及び非磁性層は立方格子金属の単結晶膜であること
を特徴とする請求項１８記載の磁気抵抗効果膜の製造方
法。20. The first buffer layer formed in the fifth step is a single crystal film of a body-centered or face-centered cubic lattice metal,
The second buffer layer formed in the sixth step is a single crystal film of a cubic lattice metal, and the magnetic layer and the nonmagnetic layer formed in the fourth step are single crystal films of a cubic lattice metal 19. The method of manufacturing a magnetoresistive film according to claim 18, wherein:
Ｏ）単結晶で形成され、前記バッファ層は鉄（Ｆｅ）で
形成され、前記磁性層はコバルト（Ｃｏ）で形成され、
前記非磁性層は銅（Ｃｕ）で形成されることを特徴とす
る請求項１７又は１９記載の磁気抵抗効果膜の製造方
法。21. The method according to claim 19, wherein the substrate is made of magnesium oxide (Mg).
O) a single crystal, the buffer layer is formed of iron (Fe), the magnetic layer is formed of cobalt (Co),
20. The method according to claim 17, wherein the nonmagnetic layer is formed of copper (Cu).
記バッファ層はクロム（Ｃｒ）で形成され、前記磁性層
は鉄（Ｆｅ）で形成され、前記非磁性層はクロム（Ｃ
ｒ）で形成されることを特徴とする請求項１７又は１９
記載の磁気抵抗効果膜の製造方法。22. The substrate is formed of single crystal Si, the buffer layer is formed of chromium (Cr), the magnetic layer is formed of iron (Fe), and the nonmagnetic layer is formed of chromium (C).
20. The method as claimed in claim 19, characterized in that it is formed in r).
A method for producing the magnetoresistive film according to the above.
Ｏ）単結晶で形成され、前記第１バッファ層は鉄（Ｆ
ｅ）で形成され、前記第２バッファ層は銅（Ｃｕ）で形
成され、前記磁性層はコバルト（Ｃｏ）で形成され、前
記非磁性層は銅（Ｃｕ）で形成されることを特徴とする
請求項１８又は２０記載の磁気抵抗効果膜の製造方法。23. The method according to claim 20, wherein the substrate is made of magnesium oxide (Mg).
O) single crystal, and the first buffer layer is made of iron (F)
e), wherein the second buffer layer is formed of copper (Cu), the magnetic layer is formed of cobalt (Co), and the non-magnetic layer is formed of copper (Cu). The method for manufacturing a magnetoresistive film according to claim 18.
形成され、前記第１バッファ層はクロム（Ｃｒ）で形成
され、前記第２バッファ層は銅（Ｃｕ）で形成され、前
記磁性層は鉄（Ｆｅ）で形成され、前記非磁性層はクロ
ム（Ｃｒ）で形成されることを特徴とする請求項１８又
は２０記載の磁気抵抗効果膜の製造方法。24. The substrate, wherein the substrate is made of silicon (Si) single crystal, the first buffer layer is made of chromium (Cr), the second buffer layer is made of copper (Cu), and the magnetic layer is 21. The method according to claim 18, wherein the nonmagnetic layer is formed of iron (Fe), and the nonmagnetic layer is formed of chromium (Cr).
Ｏ）単結晶で形成され、前記バッファ層は白金（Ｐｔ）
で形成され、前記磁性層はコバルト（Ｃｏ）で形成さ
れ、前記非磁性層は銅（Ｃｕ）で形成されることを特徴
とする請求項１７又は１９記載の磁気抵抗効果膜の製造
方法。25. The method according to claim 25, wherein the substrate is made of magnesium oxide (Mg).
O) a single crystal, wherein the buffer layer is platinum (Pt)
20. The method of claim 17, wherein the magnetic layer is formed of cobalt (Co), and the nonmagnetic layer is formed of copper (Cu).
形成され、前記バッファ層はパラジウム（Ｐｄ）で形成
され、前記磁性層はコバルト（Ｃｏ）で形成され、前記
非磁性層は銅（Ｃｕ）で形成されることを特徴とする請
求項１７又は１９記載の磁気抵抗効果膜の製造方法。26. The substrate is formed of silicon (Si) single crystal, the buffer layer is formed of palladium (Pd), the magnetic layer is formed of cobalt (Co), and the non-magnetic layer is formed of copper (Cu). 20. The method of manufacturing a magnetoresistive film according to claim 17 or 19, wherein
Ｏ）単結晶で形成され、前記第１バッファ層は白金（Ｐ
ｔ）で形成され、前記第２バッファ層は銅（Ｃｕ）で形
成され、前記磁性層はコバルト（Ｃｏ）で形成され、前
記非磁性層は銅（Ｃｕ）で形成されることを特徴とする
請求項１８又は２０記載の磁気抵抗効果膜の製造方法。27. The method according to claim 27, wherein the substrate is made of magnesium oxide (Mg).
O) single crystal, and the first buffer layer is formed of platinum (P
t), wherein the second buffer layer is formed of copper (Cu), the magnetic layer is formed of cobalt (Co), and the nonmagnetic layer is formed of copper (Cu). The method for manufacturing a magnetoresistive film according to claim 18.
形成され、前記第１バッファ層はパラジウム（Ｐｄ）で
形成され、前記第２バッファ層は銅（Ｃｕ）で形成さ
れ、前記磁性層はコバルト（Ｃｏ）で形成され、前記非
磁性層は銅（Ｃｕ）で形成されることを特徴とする請求
項１８又は２０記載の磁気抵抗効果膜の製造方法。28. The substrate, wherein the substrate is made of single crystal silicon (Si), the first buffer layer is made of palladium (Pd), the second buffer layer is made of copper (Cu), and the magnetic layer is 21. The method according to claim 18, wherein the nonmagnetic layer is formed of cobalt (Co), and the nonmagnetic layer is formed of copper (Cu).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10254474A JP2000091665A (en) | 1998-09-09 | 1998-09-09 | Magnetoresistance effect film and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10254474A JP2000091665A (en) | 1998-09-09 | 1998-09-09 | Magnetoresistance effect film and manufacture thereof |
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| Publication Number | Publication Date |
|---|---|
| JP2000091665A true JP2000091665A (en) | 2000-03-31 |
Family
ID=17265556
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10254474A Pending JP2000091665A (en) | 1998-09-09 | 1998-09-09 | Magnetoresistance effect film and manufacture thereof |
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| Country | Link |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003001614A1 (en) * | 2001-06-26 | 2003-01-03 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistive device and its producing method |
| JP2010192907A (en) * | 2002-06-07 | 2010-09-02 | Seagate Technology Llc | Film device having perpendicular exchange bias |
| WO2015129865A1 (en) * | 2014-02-27 | 2015-09-03 | 国立大学法人東京工業大学 | Layered structure, switching element, magnetic device, and method for manufacturing layered structure |
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- 1998-09-09 JP JP10254474A patent/JP2000091665A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003001614A1 (en) * | 2001-06-26 | 2003-01-03 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistive device and its producing method |
| JP2010192907A (en) * | 2002-06-07 | 2010-09-02 | Seagate Technology Llc | Film device having perpendicular exchange bias |
| WO2015129865A1 (en) * | 2014-02-27 | 2015-09-03 | 国立大学法人東京工業大学 | Layered structure, switching element, magnetic device, and method for manufacturing layered structure |
| JP2015162536A (en) * | 2014-02-27 | 2015-09-07 | 国立大学法人東京工業大学 | Laminate structure, switching element, magnetic device, and manufacturing method of laminate structure |
| CN106062901A (en) * | 2014-02-27 | 2016-10-26 | 国立大学法人东京工业大学 | Layered structure, switching element, magnetic device, and method for manufacturing layered structure |
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| JP7261901B2 (en) | 2019-03-13 | 2023-04-20 | ノースロップ グラマン システムズ コーポレーション | Repeated alternating multilayer buffer layers |
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