JPH0593276A - Plasma cvd apparatus - Google Patents
Plasma cvd apparatusInfo
- Publication number
- JPH0593276A JPH0593276A JP25377591A JP25377591A JPH0593276A JP H0593276 A JPH0593276 A JP H0593276A JP 25377591 A JP25377591 A JP 25377591A JP 25377591 A JP25377591 A JP 25377591A JP H0593276 A JPH0593276 A JP H0593276A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- high frequency
- cvd apparatus
- film
- plasma cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は各種半導体デバイスの製
造、液晶表示装置の製造、基体上への超電導膜の形成、
機械部品等への耐腐食性、耐磨耗性膜の形成等に利用さ
れるプラズマＣＶＤ装置、特に、高周波電極と接地電極
を対向させたプラズマＣＶＤ装置に関する。BACKGROUND OF THE INVENTION The present invention relates to the production of various semiconductor devices, the production of liquid crystal display devices, the formation of superconducting films on substrates,
The present invention relates to a plasma CVD apparatus used for forming a corrosion resistant and abrasion resistant film on mechanical parts and the like, and particularly to a plasma CVD apparatus in which a high frequency electrode and a ground electrode are opposed to each other.
【０００２】[0002]
【従来の技術】高周波電極と接地電極を対向させたプラ
ズマＣＶＤ装置は、代表例として平行平板電極型のプラ
ズマＣＶＤ装置を挙げることができるが、それは図２に
例示するように、真空室１中に平板状の高周波電極２
と、平板状の接地電極を兼ねる基体ホルダ３とを平行に
向かい合わせて配置し、高周波電極２にはマッチングボ
ックス４を介して高周波電源５を接続するとともに、基
体ホルダ３を接地し、且つ、ヒータ６にて基体ホルダ３
上に設置される基体９を成膜温度に制御できるように
し、さらに、真空室１内を所定の成膜真空度に維持する
ための真空ポンプを含む排気系７及び真空室１内に原料
ガスを供給するためのガス導入口８を設けたものであ
る。高周波電極２は原料ガスの噴射ノズルを兼ねてい
る。2. Description of the Related Art As a plasma CVD apparatus in which a high frequency electrode and a ground electrode are opposed to each other, a parallel plate electrode type plasma CVD apparatus can be mentioned as a typical example. As shown in FIG. Flat plate high frequency electrode 2
And a substrate holder 3 also serving as a flat plate-shaped ground electrode are arranged in parallel to face each other, a high frequency power source 5 is connected to the high frequency electrode 2 via a matching box 4, and the substrate holder 3 is grounded, and Heater 6 for substrate holder 3
The base material 9 installed on the substrate 9 can be controlled to a film forming temperature, and further, an exhaust system 7 including a vacuum pump for maintaining the inside of the vacuum chamber 1 at a predetermined film forming vacuum degree and a source gas in the vacuum chamber 1. The gas inlet 8 for supplying the gas is provided. The high frequency electrode 2 also serves as a nozzle for injecting the raw material gas.
【０００３】基体ホルダ３には、例えば半導体デバイス
基板９が設置され、しかるのち、該基板９がヒータ６に
て所定の成膜温度に制御されるとともに真空室１内が所
定の成膜真空度に維持されつつガス導入口８から原料ガ
スが供給され、このガスに高周波電極２から高周波電圧
が印加されることで該ガスがプラズマ化し、このプラズ
マに基板９表面が曝されることで、該表面に所望の薄膜
が形成される。A semiconductor device substrate 9, for example, is installed on the substrate holder 3, and then the substrate 9 is controlled to a predetermined film forming temperature by a heater 6 and the inside of the vacuum chamber 1 has a predetermined film forming vacuum degree. The raw material gas is supplied from the gas introduction port 8 while being maintained at a high temperature, and a high frequency voltage is applied to the gas from the high frequency electrode 2, so that the gas is turned into plasma, and the surface of the substrate 9 is exposed to the plasma. A desired thin film is formed on the surface.
【０００４】[0004]
【発明が解決しようとする課題】しかし、この種の従来
プラズマＣＶＤ装置においては、例えばシリコンウエハ
基板に原料ガスとしてＳｉＨ4 やＳｉ2 Ｈ6 等を用いて
アモルファスシリコン（ａ−Ｓｉ）膜を形成したり、原
料ガスにＳｉＨ4 、ＮＨ3 、Ｎ2 等を用いてＳｉＮｘ膜
を成膜する際、膜欠陥の原因となる高次シラン化合物の
パーティクルが発生し、これが基板上に降り注ぎ、膜に
付着したり、混入したりする。However, in this type of conventional plasma CVD apparatus, for example, an amorphous silicon (a-Si) film is formed on a silicon wafer substrate by using SiH 4 or Si 2 H 6 as a raw material gas. In addition, when forming a SiNx film using SiH 4 , NH 3 , N 2 or the like as a source gas, particles of a high-order silane compound, which causes a film defect, are generated, and these particles fall onto the substrate and form a film. Adhere or mix.
【０００５】このパーティクルを減らすため、例えば数
１０ｍＴｏｒｒ程度の低圧下における成膜、低高周波電
力による成膜が試みられているが、このような成膜条件
では成膜速度が大幅に低下する。そこで本発明は、成膜
速度を大幅に低下させずに成膜へのパーティクル付着や
混入を従来より防止できる平行平板電極型プラズマＣＶ
Ｄ装置を提供することを課題とする。In order to reduce the particles, it has been attempted to form a film under a low pressure of, for example, about several tens of mTorr or a film with a low high frequency power. However, under such a film forming condition, the film forming speed is significantly reduced. Therefore, the present invention is a parallel plate electrode type plasma CV capable of preventing particles from adhering to or mixing into a film without significantly reducing the film forming rate.
An object is to provide a D device.
【０００６】[0006]
【課題を解決するための手段】本発明者は前記課題を解
決するにあたり、プラズマＣＶＤ装置の気相中に発生す
るパーティクルは、通常、負に帯電していること、従っ
て、基体ホルダの前に負電位部を設ければ、該パーティ
クルがホルダ上の基体に近づけないか、近づき難くなる
ことに着目し、また、このような負電位部を設けると、
連続して高周波電力を印加する場合、気相中にパーティ
クルが停滞し、成膜に寄与する活性種の基体への供給量
も低減して成膜速度が低下するが、これは、高周波電極
に永久磁石を配置してプラズマ密度上げれば解決できる
ことを見出し、本発明を完成した。In order to solve the above-mentioned problems, the present inventor has found that the particles generated in the gas phase of a plasma CVD apparatus are usually negatively charged. Paying attention to the fact that, if a negative potential part is provided, the particles will not approach or become difficult to approach the substrate on the holder, and if such a negative potential part is provided,
When high-frequency power is continuously applied, particles are stagnated in the gas phase, and the amount of active species that contribute to film formation is also reduced to the substrate to reduce the film formation rate. We have found that the problem can be solved by disposing a permanent magnet and increasing the plasma density, and completed the present invention.
【０００７】すなわち本発明は、先ず、高周波電極と接
地電極を対向させたプラズマＣＶＤ装置において、前記
高周波電極と接地電極との間にメッシュ状電極を配置
し、該メッシュ状電極に負電圧を印加できるように構成
したことを特徴とするプラズマＣＶＤ装置を提供するも
のである。また、本発明は、前記メッシュ状電極を設け
ることによる成膜速度の低下を防止するため、高周波電
極にプラズマ密度を上げるための永久磁石を配置した前
記プラズマＣＶＤ装置を提供するものである。That is, according to the present invention, first, in a plasma CVD apparatus in which a high frequency electrode and a ground electrode are opposed to each other, a mesh electrode is arranged between the high frequency electrode and the ground electrode, and a negative voltage is applied to the mesh electrode. The present invention provides a plasma CVD apparatus characterized by being configured so that it can be performed. Further, the present invention provides the plasma CVD apparatus in which a permanent magnet for increasing the plasma density is arranged in the high frequency electrode in order to prevent the film formation rate from being lowered by providing the mesh electrode.
【０００８】前記メッシュ状電極の材質としては、ステ
ンレス鋼、モリブデン、カーボン等が考えられ、また、
開口の形状も四角形、丸形等種々考えられる。開口寸法
も本発明の課題を解決できる範囲で任意であり、例えば
四角開口、丸形開口については、一辺又は直径が０．５
〜２ｍｍ程度を例示できる。前記メッシュ状電極に印加
する負電圧の大きさは、基体の種類、形成すべき膜の種
類、高周波電力の大きさ等の条件によって異なるが、成
膜速度をあまり低下させない範囲で、パーティクルが基
体に近づけないか、近づき難くなるように任意に定める
ことができる。一般的な成膜条件では、例えば０＜｜負
電圧｜＜２００Ｖの範囲を例示できる。但しこれに限定
されない。ガラス基板やシリコンウエハにａ−Ｓｉ膜や
ＳｉＮｘ膜を形成するときは、略この範囲でよい。The material of the mesh electrode may be stainless steel, molybdenum, carbon, etc.
The shape of the opening may be various, such as square or round. The opening size is also optional within the range in which the problems of the present invention can be solved. For example, for a square opening or a round opening, one side or the diameter is 0.5.
An example is about 2 mm. The magnitude of the negative voltage applied to the mesh electrode varies depending on the type of substrate, the type of film to be formed, the magnitude of high-frequency power, etc. It can be arbitrarily set so as not to approach or difficult to approach. In general film forming conditions, for example, a range of 0 <| negative voltage | <200V can be exemplified. However, it is not limited to this. When forming an a-Si film or a SiNx film on a glass substrate or a silicon wafer, it may be in this range.
【０００９】[0009]
【作用】本発明装置によると、成膜中、高周波電極と接
地電極との間に設けたメッシュ状電極に負電圧を印加す
ることにより、気相中に発生する負帯電のパーティクル
がこのメッシュ状電極に遮られて基体ホルダ上の基体へ
近づけないか、近づき難くなり、あまり成膜速度が低下
することなく、基体上膜へのパーティクルの付着や混入
が従来より防止される。According to the apparatus of the present invention, during film formation, by applying a negative voltage to the mesh-shaped electrode provided between the high frequency electrode and the ground electrode, the negatively charged particles generated in the gas phase are generated in the mesh-like shape. As a result of being blocked by the electrodes and not approaching or approaching the substrate on the substrate holder, it is possible to prevent particles from adhering to or mixing with the film on the substrate more than before, without significantly reducing the film formation rate.
【００１０】高周波電極に永久磁石を設けるときは、こ
の磁石と電界の作用で電子のサイククロトロン運動が発
生してガス分解速度が速まり、それだけプラズマ密度が
上がり、メッシュ状電極を設けたことによる成膜速度の
低下がそれだけ解消され、成膜速度が向上する。When a permanent magnet is provided on the high-frequency electrode, the cyclotron motion of electrons is generated by the action of the magnet and the electric field to accelerate the gas decomposition rate, thereby increasing the plasma density and providing the mesh electrode. The decrease in the film formation rate is eliminated, and the film formation rate is improved.
【００１１】[0011]
【実施例】以下、本発明の実施例を図面を参照して説明
する。図１は本発明の一実施例の概略構成を示してい
る。このプラズマＣＶＤ装置は平行平板電極型プラズマ
ＣＶＤ装置で、高周波電極２と基体ホルダ３との間にメ
ッシュ状電極１０を配置し、これに電圧可変の電源１０
ａから負電圧を印加できるようにしてある点、及び高周
波電極に複数の永久磁石Ｍが等間隔で配置してある点を
除いて、図２の従来装置と同構造である。従来装置にお
ける部品と同じ部品については同じ参照符号を付してあ
る。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a schematic configuration of an embodiment of the present invention. This plasma CVD apparatus is a parallel plate electrode type plasma CVD apparatus, in which a mesh-shaped electrode 10 is arranged between a high frequency electrode 2 and a substrate holder 3 and a voltage-variable power source 10 is provided therein.
The structure is the same as that of the conventional device of FIG. 2 except that a negative voltage can be applied from a and a plurality of permanent magnets M are arranged at equal intervals on the high frequency electrode. The same parts as those in the conventional apparatus are designated by the same reference numerals.
【００１２】複数の永久磁石Ｍは、それぞれ円筒形のも
ので、５重リング形に配置してあり、基体ホルダ３の方
に向く磁極がＮ極、Ｓ極、Ｎ極、Ｓ極・・・・と交互に
なるように配置してある。この装置によると、基体ホル
ダ３には、例えば半導体デバイス基板９が設置され、し
かるのち、該基板９がヒータ６にて所定の成膜温度に制
御されるとともに真空室１内が所定の成膜真空度に維持
されつつガス導入口８から原料ガスが供給され、このガ
スに高周波電極２から高周波電圧が印加されることで該
ガスがプラズマ化し、このプラズマに基板９表面が曝さ
れることで、該表面に所望の薄膜が形成される。The plurality of permanent magnets M each have a cylindrical shape and are arranged in a quintuple ring shape. The magnetic poles facing the base holder 3 are N poles, S poles, N poles, S poles ...・ It is arranged so that it alternates with. According to this apparatus, for example, a semiconductor device substrate 9 is installed on the substrate holder 3, and then the substrate 9 is controlled to a predetermined film forming temperature by the heater 6 and a predetermined film is formed in the vacuum chamber 1. A raw material gas is supplied from the gas introduction port 8 while maintaining the degree of vacuum, and a high frequency voltage is applied to the gas from the high frequency electrode 2, whereby the gas is turned into plasma, and the surface of the substrate 9 is exposed to this plasma. , A desired thin film is formed on the surface.
【００１３】この薄膜形成中、高周波電極２と接地電極
である基体ホルダ３との間に設けたメッシュ状電極１０
に電源１０ａにて負電圧が印加され、気相中に発生する
負帯電のパーティクルがこのメッシュ状電極に遮られて
基体ホルダ上の基体９へ近づけないか、近づき難くな
り、基体膜へのパーティクルの付着や混入が従来より防
止される。また、高周波電極２に永久磁石Ｍが設けてあ
ることにより、この磁石と電界の作用で電子のサイクロ
トロン運動が生じ、そのためガスの分解速度が速まり、
そだけプラズマ密度が上がり、メッシュ状電極１０を設
けたことによる成膜速度の低下がそれだけ解消され、成
膜速度が向上する。During the formation of this thin film, the mesh electrode 10 provided between the high frequency electrode 2 and the substrate holder 3 which is a ground electrode.
When a negative voltage is applied to the substrate 10 by a power source 10a, the negatively charged particles generated in the gas phase are blocked by the mesh-shaped electrode and cannot approach the substrate 9 on the substrate holder, or become difficult to approach the particles. It is possible to prevent the adherence and mixing of the product. Further, since the high-frequency electrode 2 is provided with the permanent magnet M, the action of the magnet and the electric field causes cyclotron motion of electrons, which accelerates the decomposition rate of gas,
The plasma density is increased by that much, the decrease in the film formation rate due to the provision of the mesh-shaped electrode 10 is eliminated, and the film formation rate is improved.
【００１４】前記装置を用い、次の条件で成膜を行って
みた。 例１：ａ−Ｓｉ膜形成 成膜条件 成膜真空度 ： ０．5 〜１．０Ｔｏｒｒ 基板温度 ： ３００℃ 高周波電極 ： 直径 ８インチ 永久磁石 ： Ｓｍ−Ｃｏ系の磁力約５０００ガ
ウスの円筒形磁石を１０ｍｍピッチで５重リング形に配
置 高周波電力 ： 約２００Ｗ １３．５６ＭＨｚ 基体ホルダ ： 直径 ８インチ 使用ガス ： ＳｉＨ4 １０〜１００ｃｃｍ メッシュ状電極 ： ステンレス鋼製、各開口は一辺約
１ｍｍの四角形、全体サイズ直径１０インチ 印加電圧 −６０Ｖ 基板 ： ６インチ シリコンウエハ 結果 成膜速度 ： 約５００Å／ｍｉｎ 膜厚 ： １０００Å パーティクル密度： ５０個／６インチシリコンウエハ
（０．3 μｍ以上） 例２：ＳｉＮｘ膜形成 成膜条件 成膜真空度 ： ０．４〜０．８Ｔｏｒｒ 基板温度 ： ３５０℃ 高周波電極 ： 直径 ８インチ 永久磁石 ： 実施例１と同じ 高周波電力 ： 約２００Ｗ １３．５６ＭＨｚ 基体ホルダ ： 直径 ８インチ 使用ガス ： ＳｉＨ4 １０〜１００ｃｃｍ ＮＨ3 約２００ｃｃｍ Ｎ2 約１００ｃｃｍ メッシュ状電極 ： 実施例１と同じ 印加電圧 −４０Ｖ 基板 ： ６インチ シリコンウエハ 結果 成膜速度 ： 約６００Å／ｍｉｎ 膜厚 ： ３０００Å パーティクル密度： ７０個／６インチシリコンウエハ
（粒径0.3 μｍ以上）以上の具体例によると、いずれ
も、粒径０．３μｍ以上のパーティクルが従来例の数百
個／６インチシリコンウエハの１／５〜１／１０とな
り、成膜速度は１．５〜２倍となった。Film formation was attempted using the above apparatus under the following conditions. Example 1: a-Si film formation Film forming conditions Film forming vacuum degree: 0.5 to 1.0 Torr Substrate temperature: 300 ° C. High frequency electrode: 8 inch diameter Permanent magnet: Sm-Co magnetic force approximately 5000 gauss cylindrical magnet Are arranged in a quintuple ring shape at a pitch of 10 mm. High frequency power: Approx. 200 W 13.56 MHz Substrate holder: 8 inches in diameter Working gas: SiH 4 10 to 100 ccm Mesh electrode: Stainless steel, each opening is a square of about 1 mm on one side, whole Size Diameter 10 inches Applied voltage -60V Substrate: 6 inches Silicon wafer result Deposition rate: About 500Å / min Film thickness: 1000Å Particle density: 50/6 inches silicon wafer (0.3 μm or more) Example 2: SiNx film formation Film forming conditions Film forming vacuum degree: 0.4 to 0.8 Torr Substrate temperature: 350 ° C. High frequency electrode: Straight 8 inches permanent magnets: the same high-frequency power as in Example 1: about 200 W 13.56 MHz base holder: diameter of 8 inches using Gas: SiH 4 10~100ccm NH 3 to about 200 ccm N 2 about 100ccm meshed electrode: same applied as in Example 1 Voltage -40V Substrate: 6 inch silicon wafer result Deposition rate: about 600Å / min Film thickness: 3000Å Particle density: 70/6 inch silicon wafer (particle size 0.3 μm or more) The number of particles having a diameter of 0.3 μm or more was 1/5 to 1/10 of that of several hundreds / 6 inch silicon wafer of the conventional example, and the film forming rate was 1.5 to 2 times.
【００１５】[0015]
【発明の効果】本発明によると、高周波電極に接地電極
を対向させたプラズマＣＶＤ装置において、成膜速度を
大幅に低下させずに成膜へのパーティクル付着や混入を
従来より防止できる。高周波電極にプラズマ密度を上げ
るための永久磁石を設けるときは、メッシュ状電極を設
けたことによる成膜速度の低下がそれだけ解消され、成
膜速度が向上する。According to the present invention, in the plasma CVD apparatus in which the ground electrode is opposed to the high frequency electrode, it is possible to prevent particles from adhering to or mixing into the film without significantly reducing the film forming rate. When a permanent magnet for increasing the plasma density is provided on the high-frequency electrode, the decrease in the film formation rate due to the provision of the mesh-shaped electrode is eliminated, and the film formation rate is improved.
【図１】本発明の一実施例の概略構成を示す図である。FIG. 1 is a diagram showing a schematic configuration of an embodiment of the present invention.
【図２】従来例の概略構成を示す図である。FIG. 2 is a diagram showing a schematic configuration of a conventional example.
１ 真空室 ２ 高周波電極 ３ 基体ホルダ ４ マッチングボックス ５ 高周波電源 ６ ヒータ ７ 排気系 ８ ガス導入口 ９ 基板 １０ メッシュ状電極 １０ａ 電源 Ｍ 永久磁石 1 Vacuum Chamber 2 High Frequency Electrode 3 Substrate Holder 4 Matching Box 5 High Frequency Power Supply 6 Heater 7 Exhaust System 8 Gas Inlet 9 Substrate 10 Mesh Electrode 10a Power Supply M Permanent Magnet
Claims (2)
ズマＣＶＤ装置において、前記高周波電極と接地電極と
の間にメッシュ状電極を配置し、該メッシュ状電極に負
電圧を印加できるように構成したことを特徴とするプラ
ズマＣＶＤ装置。1. A plasma CVD apparatus in which a high-frequency electrode and a ground electrode are opposed to each other, a mesh-shaped electrode is arranged between the high-frequency electrode and the ground electrode, and a negative voltage can be applied to the mesh-shaped electrode. A plasma CVD apparatus characterized by the above.
ための永久磁石を配置した請求項１記載のプラズマＣＶ
Ｄ装置。2. The plasma CV according to claim 1, wherein a permanent magnet for increasing plasma density is arranged on the high frequency electrode.
D device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25377591A JPH0593276A (en) | 1991-10-01 | 1991-10-01 | Plasma cvd apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25377591A JPH0593276A (en) | 1991-10-01 | 1991-10-01 | Plasma cvd apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0593276A true JPH0593276A (en) | 1993-04-16 |
Family
ID=17255976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25377591A Pending JPH0593276A (en) | 1991-10-01 | 1991-10-01 | Plasma cvd apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0593276A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06283454A (en) * | 1993-01-28 | 1994-10-07 | Applied Materials Inc | Method for deposition of silicon nitride thin film at high deposition speed on large-area glass substrate by cvd |
| JP2010001535A (en) * | 2008-06-20 | 2010-01-07 | Fujifilm Corp | Method of forming gas barrier film, and gas barrier film |
-
1991
- 1991-10-01 JP JP25377591A patent/JPH0593276A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06283454A (en) * | 1993-01-28 | 1994-10-07 | Applied Materials Inc | Method for deposition of silicon nitride thin film at high deposition speed on large-area glass substrate by cvd |
| JP2010001535A (en) * | 2008-06-20 | 2010-01-07 | Fujifilm Corp | Method of forming gas barrier film, and gas barrier film |
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