JPH0590218A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH0590218A
JPH0590218A JP25077991A JP25077991A JPH0590218A JP H0590218 A JPH0590218 A JP H0590218A JP 25077991 A JP25077991 A JP 25077991A JP 25077991 A JP25077991 A JP 25077991A JP H0590218 A JPH0590218 A JP H0590218A
Authority
JP
Japan
Prior art keywords
etching
gas
silicon substrate
polysilicon layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25077991A
Other languages
Japanese (ja)
Other versions
JP2817470B2 (en
Inventor
Yasunobu Tsukamoto
泰信 塚本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP3250779A priority Critical patent/JP2817470B2/en
Publication of JPH0590218A publication Critical patent/JPH0590218A/en
Application granted granted Critical
Publication of JP2817470B2 publication Critical patent/JP2817470B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To make it possible to conduct etching on a silicon substrate and a polysilicon layer in the degree equal to that of the past using gas not subjected to fluorocarbon regulation by a method wherein the specific ratio of Cl2 or Cl2 and CHF3 is added to the etching gas of dry etching method using SF6 as etching gas. CONSTITUTION:When a groove 3 is formed by etching a silicon substrate 1 using a photoresist film 2 by bringing the total amount of flow of Cl2 to 5 to 15% by an SF6+Cl2 gas system, an anisotropic etching having less side etching can be conducted. As a result, an anisotropic etching can be conducted on a polysilicon layer and a silicon substrate in the same manner as in the past not using gas subjected to fluorocarbon regulation at all.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は半導体装置の製造方法に
関し、特にシリコン層の加工を行うドライエッチング方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing method, and more particularly to a dry etching method for processing a silicon layer.

【０００２】[0002]

【従来の技術】半導体装置の製造工程において、フォト
レジスト膜をマスクとして例えばシリコン基板にドライ
エッチング法により深い溝を形成しようとした場合、従
来、ＳＦ6 にＣＣｌ2 Ｆ2 （フロン１２）やＣ2 ＣｌＦ
5 （フロン１１５）やＣＣｌ4 を添加したエッチングガ
スが用いられていた。2. Description of the Related Art In the process of manufacturing a semiconductor device, when a deep groove is to be formed in a silicon substrate by using a photoresist film as a mask by a dry etching method, conventionally, SF 6 is replaced with CCl 2 F 2 (CFC 12) or C. 2 ClF
An etching gas added with 5 (Freon 115) or CCl 4 has been used.

【０００３】すなわちＳＦ6 をシリコンに対するメイン
エッチングガスとしているが、ＳＦ6 単独では、等方性
エッチングとなってしまうため、ＳＦ6 にＣＣｌ
2 Ｆ2 ，Ｃ2 ＣｌＦ5 ，ＣＣｌ4 等を添加することによ
り、添加ガスによるエッチング部の側壁への保護膜形成
作用により、異方性エッチングを実現していた。[0003] That has been the main etching gas SF6 for silicon, because the SF 6 alone becomes isotropic etching, CCl to SF 6
By adding 2 F 2 , C 2 ClF 5 , CCl 4, etc., anisotropic etching has been realized by the action of forming a protective film on the side wall of the etched portion by the added gas.

【０００４】上述のエッチングガス系は、シリコン基板
のエッチング工程においてのみでなく、ポリシリコン層
のエッチング工程においても、ポリシリコン中の不純物
の種類によってエッチング特性があまり変化しないガス
系として、現在に至るまで用いられてきている。The above-mentioned etching gas system is a gas system whose etching characteristics do not change much depending on the type of impurities in the polysilicon not only in the etching process of the silicon substrate but also in the etching process of the polysilicon layer. Has been used up to.

【０００５】[0005]

【発明が解決しようとする課題】この従来のシリコンの
ドライエッチングにおけるエッチングガスとして用いら
れている添加ガス（ＣＣｌ2 Ｆ2 ，Ｃ2 ＣｌＦ5 ，ＣＣ
ｌ4 ）は、全てフロン規制対象ガスであるため、フロン
規制が施行された場合、半導体装置の製造に支障をきた
すという問題点がある。The additive gas (CCl 2 F 2 , C 2 ClF 5 , CC used as an etching gas in the conventional dry etching of silicon is used.
l 4) are the all CFC regulated gas, if the CFC regulations are enforced, there is a problem that hinders the production of semiconductor devices.

【０００６】[0006]

【課題を解決するための手段】本発明は、エッチングガ
スとしてＳＦ6 を用いるドライエッチング法によりシリ
コン層に溝を形成する半導体装置の製造方法において、
エッチングガスに５〜１５％のＣｌ2 またはＣｌ2 とＣ
ＨＦ3 を添加することを特徴とするものである。The present invention provides a method of manufacturing a semiconductor device in which a groove is formed in a silicon layer by a dry etching method using SF 6 as an etching gas,
5 to 15% Cl 2 or Cl 2 and C in the etching gas
It is characterized by adding HF 3 .

【０００７】[0007]

【実施例】次に本発明について図面を参照して説明を行
う。エッチングガスとしてＳＦ6 にＣｌ2 を混合したガ
スを用い、フォトレジスト膜をマスクとしてシリコン基
板のエッチングを行った場合のトータル流量に占めるＣ
ｌ2 ガスの割合とエッチング速度との関係を図１に、そ
して図１のＡ〜Ｄ点におけるシリコン基板のエッチング
形状を図２に示す。The present invention will be described below with reference to the drawings. A gas which is a mixture of SF 6 and Cl 2 is used as an etching gas, and C accounts for the total flow rate when the silicon substrate is etched using the photoresist film as a mask.
The relationship between the ratio of l 2 gas and the etching rate is shown in FIG. 1, and the etching shapes of the silicon substrate at points A to D in FIG. 1 are shown in FIG.

【０００８】シリコン基板１にフォトレジスト膜２から
なるマスクを形成したのち、ＳＦ6 にＣｌ2 を添加した
エッチングガスを用いるドライエッチング法によりシリ
コン基板１をエッチングし溝３を形成した。この時Ｃｌ
2 の混合比が少い程エッチング速度は高いが、混合比が
少なすぎると、大きなサイドエッチングが入ってしま
う。After forming a mask of the photoresist film 2 on the silicon substrate 1, the silicon substrate 1 was etched by a dry etching method using an etching gas in which Cl 2 was added to SF 6 to form the groove 3. At this time Cl
The smaller the mixing ratio of 2, the higher the etching rate, but if the mixing ratio is too small, large side etching will occur.

【０００９】またＣｌ2 の混合比を増大して行くと、エ
ッチング速度は急激に低下して行き、エッチング形状も
縦方向にエチングが進まない分だけ横方向にエッチング
が進行するため、サイドエッチングの少い形状とはなら
ない。Further, as the mixing ratio of Cl 2 is increased, the etching rate sharply decreases, and the etching shape also advances in the lateral direction by the amount that the etching does not proceed in the vertical direction. Not a small shape.

【００１０】エッチングにより深い溝を形成する場合特
に必要とされるのは、サイドエッチングが少いこととエ
ッチング速度が速いことであるが、図１より明らかな様
に、以上の２点を満足させるトータルガス流量に占める
Ｃｌ2 ガス混合比の割合は、５〜１５％という範囲にし
か存在しない。What is particularly required when forming a deep groove by etching is that the side etching is small and the etching rate is fast. As is clear from FIG. 1, the above two points are satisfied. The ratio of the Cl 2 gas mixture ratio to the total gas flow rate is only in the range of 5 to 15%.

【００１１】以上、シリコン基板のエッチングの場合に
ついて説明したが、ポリシリコン層のエッチングの場合
についても、シリコン基板と同様サイドエッチングの少
いエッチングが実現できる。また上記実施例において
は、メインガスのＳＦ6 にＣｌ2 を添加した場合につい
て述べたが、Ｃｌ2 の代りにＣｌ2 ＋ＣＨＦ3 を５〜１
５％添加してもよい。Although the case of etching a silicon substrate has been described above, also in the case of etching a polysilicon layer, etching with less side etching can be realized as in the case of a silicon substrate. Also in the above embodiment, it has dealt with the case of adding Cl 2 to SF 6 the main gas, the Cl 2 + CHF 3 instead of Cl 2 5 to 1
You may add 5%.

【００１２】この場合Ｃｌ2 の他にさらにＣＨＦ3 を添
加するため、ＣＨＦ3 ガス中のＣ及びＨの被エッチング
物側壁への付着による側壁保護効果により、さらにサイ
ドエッチングの少い溝を形成することができる。In this case, since CHF 3 is further added in addition to Cl 2, the side wall protection effect by adhering C and H in the CHF 3 gas to the side wall of the object to be etched forms a groove with less side etching. be able to.

【００１３】[0013]

【発明の効果】以上説明したように本発明は、ＳＦ6 に
Ｃｌ2 またはＣｌ2 とＣＨＦ3 を添加することにより、
フロン規制ガスを全く使わずに従来と同様に、ポリシリ
コン層及びシリコン基板の異方性エッチングを行うこと
ができるという効果がある。As described above, according to the present invention, by adding Cl 2 or Cl 2 and CHF 3 to SF 6 ,
As in the conventional case, anisotropic etching of the polysilicon layer and the silicon substrate can be performed without using any CFC regulating gas.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の実施例に用いるエッチングガス中のＣ
ｌ2 の割合とエッチング速度との関係を示す図。FIG. 1 C in etching gas used in Examples of the present invention
diagram showing the relationship between the ratio of l 2 and the etching rate.

【図２】Ｃｌ2 ガスの割合による溝の形状の変化を示す
図。FIG. 2 is a diagram showing changes in the shape of the groove depending on the ratio of Cl 2 gas.

【符号の説明】[Explanation of symbols]

１ シリコン基板 ２ フォトレジスト膜 ３ 溝 1 Silicon substrate 2 Photoresist film 3 Groove

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】 エッチングガスとしてＳＦ6 を用いるド
ライエッチング法によりシリコン層に溝を形成する半導
体装置の製造方法において、エッチングガスに５〜１５
％のＣｌ2 またはＣｌ2 とＣＨＦ3を添加することを特
徴とする半導体装置の製造方法。1. A method of manufacturing a semiconductor device in which a groove is formed in a silicon layer by a dry etching method using SF 6 as an etching gas, the etching gas is 5 to 15
% Cl 2 or Cl 2 and CHF 3 are added.
JP3250779A 1991-09-30 1991-09-30 Method for manufacturing semiconductor device Expired - Fee Related JP2817470B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3250779A JP2817470B2 (en) 1991-09-30 1991-09-30 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3250779A JP2817470B2 (en) 1991-09-30 1991-09-30 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPH0590218A true JPH0590218A (en) 1993-04-09
JP2817470B2 JP2817470B2 (en) 1998-10-30

Family

ID=17212923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3250779A Expired - Fee Related JP2817470B2 (en) 1991-09-30 1991-09-30 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2817470B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148313A (en) * 1995-11-22 1997-06-06 Nec Corp Dry etching process
CN107895694A (en) * 2017-11-14 2018-04-10 扬州扬杰电子科技股份有限公司 A kind of method for dry etching silicon groove

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55119177A (en) * 1979-02-21 1980-09-12 Ibm Silicon etching method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55119177A (en) * 1979-02-21 1980-09-12 Ibm Silicon etching method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148313A (en) * 1995-11-22 1997-06-06 Nec Corp Dry etching process
CN107895694A (en) * 2017-11-14 2018-04-10 扬州扬杰电子科技股份有限公司 A kind of method for dry etching silicon groove

Also Published As

Publication number Publication date
JP2817470B2 (en) 1998-10-30

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