JPH0362518A - Etching process - Google Patents
Etching processInfo
- Publication number
- JPH0362518A JPH0362518A JP19755289A JP19755289A JPH0362518A JP H0362518 A JPH0362518 A JP H0362518A JP 19755289 A JP19755289 A JP 19755289A JP 19755289 A JP19755289 A JP 19755289A JP H0362518 A JPH0362518 A JP H0362518A
- Authority
- JP
- Japan
- Prior art keywords
- freon
- film
- chlorine
- etching
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000005530 etching Methods 0.000 title claims description 20
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000460 chlorine Substances 0.000 claims abstract description 12
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 11
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims abstract description 9
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910021342 tungsten silicide Inorganic materials 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000001020 plasma etching Methods 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 239000007789 gas Substances 0.000 abstract description 8
- AJDIZQLSFPQPEY-UHFFFAOYSA-N 1,1,2-Trichlorotrifluoroethane Chemical compound FC(F)(Cl)C(F)(Cl)Cl AJDIZQLSFPQPEY-UHFFFAOYSA-N 0.000 abstract description 6
- RFCAUADVODFSLZ-UHFFFAOYSA-N 1-Chloro-1,1,2,2,2-pentafluoroethane Chemical compound FC(F)(F)C(F)(F)Cl RFCAUADVODFSLZ-UHFFFAOYSA-N 0.000 abstract description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 235000019406 chloropentafluoroethane Nutrition 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 229910015844 BCl3 Inorganic materials 0.000 abstract 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 abstract 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 3
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造方法に関し、応性イオンエツ
チングの方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of reactive ion etching.
特に反
〔従来の技術〕
従来、多結晶シリコンおよびタングステンシリサイドの
反応性イオンエツチングでは、エツチングに使用するガ
スとして六弗化硫黄（ｓ Ｆ６）とフロン１１３ （Ｏ
２Ｃ４３Ｆ３）又は、六弗化硫黄（ＳＦ’６）とフロン
１１５ （Ｃ２ＣｕＦｓ）の混合ガスを使用していた。Conventionally, in reactive ion etching of polycrystalline silicon and tungsten silicide, sulfur hexafluoride (sF6) and Freon 113 (O
2C43F3) or a mixed gas of sulfur hexafluoride (SF'6) and Freon 115 (C2CuFs).
上述した従来のエツチング方法は、オゾン層を破壊する
フロン１１３又はフロン１１５を使用しているため、フ
ロン規制により、今後使用できなくなるという欠点があ
る。The conventional etching method described above uses Freon 113 or Freon 115, which destroys the ozone layer, and therefore has the disadvantage that it will no longer be usable due to regulations on Freon.
上述した従来のエツチング方法に対し、本発明は塩素（
Ｃｎｚ）、三塩化硼素（ＢＣｊ７３）、フロン１４（Ｃ
Ｆ４）および酸素（Ｏ２）を使用するという相違点を有
する。In contrast to the conventional etching method described above, the present invention uses chlorine (
Cnz), boron trichloride (BCj73), Freon 14 (C
The difference is that F4) and oxygen (O2) are used.
本発明のエツチング方法は、フォトレジストをマスクと
して、酸化膜上の多結晶シリコンおよびタングステンシ
リサイドの反応性イＴンエッチングを行なう方法におい
て、塩素（Ｃ４’２）、三塩化硼素（Ｂ Ｃｕ ３）
、フロン１４（ＣＦ４）、および酸素（Ｏ２）の混合ガ
スを用いるという特徴を有している。The etching method of the present invention is a method of performing reactive etching of polycrystalline silicon and tungsten silicide on an oxide film using a photoresist as a mask.
It is characterized by using a mixed gas of , Freon 14 (CF4), and oxygen (O2).
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例のエツチング前の半導体
チップ（ウェハー）の縦断面図である。FIG. 1 is a longitudinal sectional view of a semiconductor chip (wafer) before etching according to a first embodiment of the present invention.
シリコン基板４０表面に酸化膜３を形成し、さらに被エ
ツチング膜である多結晶シリコン膜２を形成した後にフ
ォトレジスト１によってパターンを形成する。この半導
体基板な塩素（Ｃｊ７２）、三塩化硼素（Ｂ ＣＩ２３
） 、フロン１４ （ＣＦ４）、酸素（Ｏ２）の混合ガ
スを用いた反応性イオンエツチングによりエツチングを
行なう。After forming an oxide film 3 on the surface of a silicon substrate 40 and further forming a polycrystalline silicon film 2 as a film to be etched, a pattern is formed using a photoresist 1. This semiconductor substrate contains chlorine (Cj72), boron trichloride (B CI23)
), fluorocarbon 14 (CF4), and oxygen (O2).
第２図は、本発明の第１の実施例のエツチング後の半導
体チップの縦断面図である。多結晶シリコン膜２は、フ
ォトレジスト１に対して、垂直にエツチングされる。FIG. 2 is a longitudinal sectional view of the semiconductor chip after etching according to the first embodiment of the present invention. Polycrystalline silicon film 2 is etched perpendicularly to photoresist 1.
第３図は本発明の第１の実施例のエツチング特性図であ
る。混合ガス中のＢ Ｃ１２３流量を１２０３ＣＣＭ。FIG. 3 is an etching characteristic diagram of the first embodiment of the present invention. B C123 flow rate in mixed gas is 1203 CCM.
ＣＦ、流量を１０ｓｃｃｙｚ ０２流量を１０３００Ｍ
とし、高周波電力を１３００Ｗとした場合、圧力２５ｍ
Ｔｏｒｒから４０ｍＴｏｒｒの範囲で塩素流量２０５ｃ
ｃｈ＜２１ではエツチング速度は３７５人／ｍｉｎから
４３０人／山となり、塩素流ｔ ３０ ｓ。０Ｍ２２で
はエツチング速度は４７５人／而か面５３０Ａ／ｍｉｎ
となる。CF, flow rate 10sccyz 02 flow rate 10300M
If the high frequency power is 1300W, the pressure is 25m.
Chlorine flow rate 205c in the range of Torr to 40mTorr
When ch<21, the etching rate changes from 375 people/min to 430 people/min, and the chlorine flow is t 30 s. At 0M22, the etching speed is 475 people/and 530A/min.
becomes.
第４図は本発明の第２の実施例のエツチング前の半導体
チップの縦断面図である。シリコン基板４の上に酸化膜
３を形成し、この上に電極材料となるタングステンシリ
サイド膜５を形成した後にフォトレジスト１によってパ
ターンを形成し、塩素、三塩化硼素、フロン１４．酸素
の混合ガスによってエツチングを行なう。この実施例で
は、電極材料にタングステンシリサイドを使用している
ため、抵抗値をポリシリコンに比べ低くできる利点があ
る。FIG. 4 is a longitudinal sectional view of a semiconductor chip before etching according to a second embodiment of the present invention. After forming an oxide film 3 on a silicon substrate 4 and forming a tungsten silicide film 5 as an electrode material thereon, a pattern is formed using a photoresist 1, and chlorine, boron trichloride, and chlorofluorocarbons 14. Etching is performed using a mixed gas of oxygen. In this embodiment, since tungsten silicide is used as the electrode material, there is an advantage that the resistance value can be lower than that of polysilicon.
以上説明したように、本発明は、塩素、三塩化硼素、フ
ロン１４．酸素の混合ガスにより多結晶シリコン膜ある
いはタングステンシリサイド膜をエツチングすることに
よりオゾン層を破壊するフロン１１３．フロン１１３を
使用する必要がなくなるという効果がある。As explained above, the present invention uses chlorine, boron trichloride, fluorocarbon 14. CFC 113, which destroys the ozone layer by etching a polycrystalline silicon film or a tungsten silicide film with a mixed gas of oxygen. This has the effect of eliminating the need to use Freon 113.
第１図は本発明の第１の実施例のエツチング前の半導体
チップの縦断面図、第２図は本発明の第１の実施例のエ
ツチング後の半導体チップの縦断面図、第３図は本発明
の第１の実施例のエツチング特性図、第４図は本発明の
第２の実施例のエツチング前の半導体チップの縦断面図
である。
１・・・・・・フォトレジスト、２・・・・・・多結晶
シリコン膜、３・・・・・・酸化膜、４・・・・・・シ
リコン基板、５・・・・・・タングステンシリサイド膜
、２１・旧・・塩素流量２０ ｓｃｃＭでのエツチング
特性、２２・・・・・・塩素流量３０、。。８でのエツ
チング特性。FIG. 1 is a vertical cross-sectional view of a semiconductor chip before etching according to a first embodiment of the present invention, FIG. 2 is a vertical cross-sectional view of a semiconductor chip after etching according to a first embodiment of the present invention, and FIG. FIG. 4 is a longitudinal sectional view of the semiconductor chip before etching according to the second embodiment of the present invention. 1... Photoresist, 2... Polycrystalline silicon film, 3... Oxide film, 4... Silicon substrate, 5... Tungsten Silicide film, 21. Old... Etching characteristics at chlorine flow rate of 20 sccM, 22... Chlorine flow rate of 30. . Etching characteristics at 8.
Claims (2)
晶シリコンおよびタングステンシリサイドの反応性イオ
ンエッチングを行なう方法において、塩素（Ｃｌ＿２）
、三塩化硼素（ＢＣｌ＿３）、フロン１４（ＣＦ＿４）
、および酸素（Ｏ＿２）の混合ガスを用いることを特徴
とするエッチング方法。(1) In a method of reactive ion etching of polycrystalline silicon and tungsten silicide on an oxide film using a photoresist as a mask, chlorine (Cl_2)
, boron trichloride (BCl_3), Freon-14 (CF_4)
, and oxygen (O_2).
を特徴とする特許請求の範囲第（１）項記載のエッチン
グ方法。(2) The etching method according to claim (1), wherein the etching is performed perpendicularly to the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1197552A JP3000593B2 (en) | 1989-07-28 | 1989-07-28 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1197552A JP3000593B2 (en) | 1989-07-28 | 1989-07-28 | Etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0362518A true JPH0362518A (en) | 1991-03-18 |
| JP3000593B2 JP3000593B2 (en) | 2000-01-17 |
Family
ID=16376388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1197552A Expired - Fee Related JP3000593B2 (en) | 1989-07-28 | 1989-07-28 | Etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3000593B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001029882A3 (en) * | 1999-10-21 | 2001-11-08 | Applied Materials Inc | Method for in situ removal of a dielectric antireflective coating during a gate etch process |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101447434B1 (en) | 2008-09-09 | 2014-10-13 | 주성엔지니어링(주) | Solar cell, method and apparatus for fabrication of the solar cell |
-
1989
- 1989-07-28 JP JP1197552A patent/JP3000593B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001029882A3 (en) * | 1999-10-21 | 2001-11-08 | Applied Materials Inc | Method for in situ removal of a dielectric antireflective coating during a gate etch process |
| US6613682B1 (en) | 1999-10-21 | 2003-09-02 | Applied Materials Inc. | Method for in situ removal of a dielectric antireflective coating during a gate etch process |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3000593B2 (en) | 2000-01-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR0185372B1 (en) | Fabrication method of semiconductor device | |
| KR940022724A (en) | Dry etching method | |
| TW200839847A (en) | Method for fabricating semiconductor device | |
| JPS6477128A (en) | Material and method for etching tungsten polycrystalline silicide with silicon compound as mask | |
| US5167762A (en) | Anisotropic etch method | |
| US10573529B2 (en) | Method of etching a three-dimensional dielectric layer | |
| KR930014829A (en) | Etching method | |
| US6069087A (en) | Highly selective dry etching process | |
| KR19990027887A (en) | Fine Pattern Forming Method of Semiconductor Device Using Spacer | |
| JPH0362518A (en) | Etching process | |
| JPS62142326A (en) | Etching method | |
| JPH0462839A (en) | Dry etching | |
| KR920018858A (en) | Etching Method of Silicon-Containing Layer | |
| JPH0645290A (en) | Manufacture of semiconductor device | |
| JPS6043829A (en) | Dry etching method | |
| JP2817470B2 (en) | Method for manufacturing semiconductor device | |
| KR100281549B1 (en) | Polysilicon film pattern formation method | |
| JPH05217955A (en) | Dryetching method | |
| JPH0661189A (en) | Dry etching method | |
| TW434825B (en) | Method for forming an opening | |
| KR20000014406A (en) | Method for manufacturing semiconductor devices | |
| JP2884852B2 (en) | Dry etching method | |
| JP2600839B2 (en) | Etching method of silicon nitride film | |
| KR950025915A (en) | Method for forming conductive film of semiconductor device | |
| JPH02271614A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |