JPH058869B2 - - Google Patents

Info

Publication number
JPH058869B2
JPH058869B2 JP16102486A JP16102486A JPH058869B2 JP H058869 B2 JPH058869 B2 JP H058869B2 JP 16102486 A JP16102486 A JP 16102486A JP 16102486 A JP16102486 A JP 16102486A JP H058869 B2 JPH058869 B2 JP H058869B2
Authority
JP
Japan
Prior art keywords
layer
emitter
base
thickness
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP16102486A
Other languages
Japanese (ja)
Other versions
JPS6316661A (en
Inventor
Toshiro Futaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP16102486A priority Critical patent/JPS6316661A/en
Publication of JPS6316661A publication Critical patent/JPS6316661A/en
Publication of JPH058869B2 publication Critical patent/JPH058869B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

〔概要〕 この発明は、バリア層をトンネル効果でぬけた
ホツトエレクトロンを応用する半導体装置にかか
り、 エミツタ層と該バリア層との間にポテンシヤル
井戸を設けて電子を蓄積することにより、 ホツトエレクトロン注入量を増大して、特性を
改善するものである。 〔産業上の利用分野〕 本発明はホツトエレクトロントランジスタ
（Hot Electron Transistor；HET）等の、バリ
ア層をトンネル効果により突き抜けたホツトエレ
クトロンを応用する半導体装置の改善に関する。 化合物半導体のヘテロ接合を用い、新しい動作
原理に基づく半導体装置の研究が最近盛んに行わ
れており、予測される可能性を実現して実用化を
推進することが強く期待されている。 〔従来の技術〕 HETは第２図ａのポテンシヤル図に示す如く、
エミツタ、ベース、コレクタの３領域と、エミツ
タ・ベース間及びベース・コレクタ間にそれぞれ
ポテンシヤルバリア領域とを備えている。 このHETに例えば温度77Kにおいて、エミツ
タをベースに対して負電位とするバイアス電圧
VBEを加えたとき、電子がエミツタ−ベース間の
バリアφEをトンネル効果により突き抜けてベー
ス領域に入る。 この電子はベース領域においては、エミツタ・
ベース間の電位差VBEによつて伝導帯端に対して
ほぼeVBEだけ高いエネルギー準位にあり、ホツ
トエレクトロン状態でコレクタに向かつて進む。
このホツトエレクトロンのエネルギーがベース領
域に対するコレクタ側のバリア高さφcより大であ
れば、エミツタ電流IEの大部分はコレクタ側のバ
リアφcを越えてコレクタに到達する。 このHETを半導体装置として具体化した従来
例の模式側断面図を第２図ｂに示す。同図におい
て、２１はｎ型砒化ガリウム（GaAs）基板、２
２はｎ型GaAsコレクタ層、２３は砒化アルミニ
ウムガリウム（AlGaAs）バリア層、２４はｎ型
GaAsベース層、２５はAlGaAsバリア層、２７
はｎ型GaAsエミツタ層、２８はコレクタ電極、
２９はベース電極、３０はエミツタ電極である。 本従来例の半導体基体のコレクタ層２２乃至エ
ミツタ層２７は例えば下記例の如く構成されてい
る。 [Summary] The present invention relates to a semiconductor device that applies hot electrons that tunnel through a barrier layer. By providing a potential well between an emitter layer and the barrier layer to store electrons, hot electron injection is achieved. The amount is increased to improve the properties. [Industrial Field of Application] The present invention relates to the improvement of semiconductor devices, such as hot electron transistors (HET), that utilize hot electrons that penetrate through a barrier layer due to the tunnel effect. Recently, research on semiconductor devices based on new operating principles using compound semiconductor heterojunctions has been actively conducted, and there are strong expectations that the predicted possibilities will be realized and practical application will be promoted. [Prior art] As shown in the potential diagram in Figure 2a, HET
It has three regions: an emitter, a base, and a collector, and potential barrier regions between the emitter and the base and between the base and the collector. Apply a bias voltage to this HET to make the emitter a negative potential with respect to the base at a temperature of 77K, for example.
When V BE is applied, electrons penetrate the emitter-base barrier φ E and enter the base region due to the tunnel effect. In the base region, these electrons are
Due to the potential difference V BE between the bases, the electrons are at an energy level approximately eV BE higher than the conduction band edge, and proceed toward the collector in a hot electron state.
If the energy of this hot electron is greater than the barrier height φ c on the collector side with respect to the base region, most of the emitter current I E crosses the barrier φ c on the collector side and reaches the collector. A schematic side sectional view of a conventional example in which this HET is embodied as a semiconductor device is shown in FIG. 2b. In the figure, 21 is an n-type gallium arsenide (GaAs) substrate;
2 is an n-type GaAs collector layer, 23 is an aluminum gallium arsenide (AlGaAs) barrier layer, and 24 is an n-type
GaAs base layer, 25 is AlGaAs barrier layer, 27
is an n-type GaAs emitter layer, 28 is a collector electrode,
29 is a base electrode, and 30 is an emitter electrode. The collector layer 22 to the emitter layer 27 of the semiconductor substrate of this conventional example are constructed as shown in the example below, for example.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

HETでは上述の如くトンネル効果によりバリ
ア層２５を突き抜けて、電子がエミツタ層２７か
らベース層２４に遷移するが、前記従来例ではこ
れに関与するエミツタ層２７の電子のエネルギー
準位幅は50meV程度に過ぎず、注入されるホツ
トエレクトロンの量すなわちエミツタ電流IEを大
きくすることが困難で、電流駆動能力が小さいた
めにHETの高速性が活かされず、ホツトエレク
トロン注入量の増大が強く要望されている。 〔問題点を解決するための手段〕 前記問題点は、ｎ型GaAs基板上に、膜厚300n
ｍのｎ型GaAsコレクタ層と、膜厚150nｍである
第１のノンドープAl0.3Ga0.7Asバリア層と、膜厚
50nｍであるｎ型Al0.1Ga0.9Asベース層と、膜厚
25nｍである第２のノンドープAl0.3Ga0.7AsGバリ
ア層と、膜厚300nｍであるAl0.1Ga0.9Asエミツタ
層が順次形成されてなり、該ベース層上に形成さ
れたベース電極と、該エミツタ層上に形成された
エミツタ電極と、該基板裏面に形成されたコレク
タ電極とを有するホツトエレクトロントランジス
タにおいて、前記第２のバリア層とエミツタ層と
の間に形成され、膜厚が10nｍであるノンドープ
GaAsウエル層を有することを特徴とする半導体
装置により解決される。 〔作用〕 本発明によれば第１図ａのポテンシヤル図に示
す如く、エミツタ層７とバリア層５との間にウエ
ル層６を設けてポテンシヤル井戸を形成し、此処
に電子を蓄積してバリア層５のエミツタ側でトン
ネル効果に関与する電子量を大幅に増加し、ホツ
トエレクトロンの注入量すなわちエミツタ電流IE
を増大する。 なおこのウエル層６をノンドープ等の低キヤリ
ア濃度とすれば、バイアス電圧を印加したときに
その伝導帯底が傾斜してエミツタ層７側からみた
バリア層５の高さが低くなり、トンネル確率が増
大する効果が得られる。 〔実施例〕 以下本発明を第１図ｂに模式側断面図を示す実
施例により具体的に説明する。 本実施例では、不純物濃度が例えば２×1018cm
-3程度のｎ型GaAs基板１上に、分子線エピタキ
シヤル成長方法（MBE法）等により、ｎ型
GaAsコレクタ層２、AlGaAsバリア層３、ｎ型
AlGaAsベース層４、AlGaAsバリア層５、本発
明によるGaAsウエル層６及びｎ型AlGaAsエミ
ツタ層７が下記例の様に順次エピタキシヤル成長
されている。 In HET, as described above, electrons penetrate through the barrier layer 25 due to the tunnel effect and transfer from the emitter layer 27 to the base layer 24, but in the conventional example, the energy level width of the electrons in the emitter layer 27 involved in this is about 50 meV. However, it is difficult to increase the amount of hot electrons injected, that is, the emitter current IE , and the high speed of HET is not utilized due to the small current driving ability, and there is a strong demand for an increase in the amount of hot electrons injected. There is. [Means for solving the problem] The problem is that the film thickness is 300n on the n-type GaAs substrate.
a first non-doped Al 0.3 Ga 0.7 As barrier layer with a thickness of 150 nm;
50nm n-type Al 0.1 Ga 0.9 As base layer and film thickness
A second non-doped Al 0.3 Ga 0.7 AsG barrier layer with a thickness of 25 nm and an Al 0.1 Ga 0.9 As emitter layer with a film thickness of 300 nm are sequentially formed, and the base electrode formed on the base layer and the emitter layer In a hot electron transistor having an emitter electrode formed on the substrate and a collector electrode formed on the back surface of the substrate, a non-doped layer having a thickness of 10 nm is formed between the second barrier layer and the emitter layer.
The problem is solved by a semiconductor device characterized by having a GaAs well layer. [Function] According to the present invention, as shown in the potential diagram of FIG. The amount of electrons involved in the tunnel effect on the emitter side of layer 5 is significantly increased, and the amount of hot electron injection, that is, the emitter current I E
increase. Note that if this well layer 6 is made with a low carrier concentration such as non-doped, the conduction band bottom will be inclined when a bias voltage is applied, and the height of the barrier layer 5 as seen from the emitter layer 7 side will be lowered, and the tunnel probability will be reduced. An increasing effect can be obtained. [Example] The present invention will be specifically explained below with reference to an example whose schematic side sectional view is shown in FIG. 1b. In this example, the impurity concentration is, for example, 2×10 18 cm
-3 n-type GaAs substrate 1 by molecular beam epitaxial growth method (MBE method) etc.
GaAs collector layer 2, AlGaAs barrier layer 3, n-type
An AlGaAs base layer 4, an AlGaAs barrier layer 5, a GaAs well layer 6 according to the present invention, and an n-type AlGaAs emitter layer 7 are epitaxially grown in sequence as shown in the example below.

〔発明の効果〕〔Effect of the invention〕

以上説明した如く本発明によれば、バリア層を
トンネル効果でぬけたホツトエレクトロンを応用
するHET等の半導体装置において、そのベース
領域に注入されるホツトエレクトロンの量すなわ
ちエミツタ電流を増大して、増幅率の向上などの
特性改善が実現され、この種の半導体装置の開発
が大きく前進する効果が得られる。 As explained above, according to the present invention, in a semiconductor device such as an HET that applies hot electrons that tunnel through a barrier layer, the amount of hot electrons injected into the base region, that is, the emitter current, is increased and amplified. This results in improvements in characteristics such as an increase in efficiency, and has the effect of greatly advancing the development of this type of semiconductor device.

【図面の簡単な説明】[Brief explanation of drawings]

第１図ａは本発明によるHETのポテンシヤル
図、第１図ｂはHETの実施例の模式側断面図、
第２図ａはHETの従来例のポテンシヤル図、第
２図ｂはHETの従来例の模式側断面図である。 図において、１はｎ型GaAs基板、２はｎ型
GaAsコレクタ層、３はAlGaAsバリア層、４は
ｎ型AlGaAsベース層、５はAlGaAsバリア層、
６は本発明によるGaAsウエル層、７はｎ型
AlGaAsエミツタ層、８はコレクタ電極、９はベ
ース電極、１０はエミツタ電極を示す。 FIG. 1a is a potential diagram of the HET according to the present invention, FIG. 1b is a schematic side sectional view of an embodiment of the HET,
FIG. 2a is a potential diagram of a conventional example of HET, and FIG. 2b is a schematic side sectional view of the conventional example of HET. In the figure, 1 is an n-type GaAs substrate, 2 is an n-type
GaAs collector layer, 3 AlGaAs barrier layer, 4 n-type AlGaAs base layer, 5 AlGaAs barrier layer,
6 is a GaAs well layer according to the present invention, 7 is an n-type
In the AlGaAs emitter layer, 8 is a collector electrode, 9 is a base electrode, and 10 is an emitter electrode.

Claims (1)

【特許請求の範囲】 １ ｎ型GaAs基板上に、膜厚300nｍのｎ型
GaAsコレクタ層と、膜厚150nｍである第１のノ
ンドープAl0.3Ga0.7Asバリア層と、膜厚50nｍで
あるｎ型Al0.1Ga0.9Asベース層と、膜厚25nｍで
ある第２のノンドープAl0.3Ga0.7Asバリア層と、
膜厚300nｍであるAl0.1Ga0.9Asエミツタ層が順次
形成されてなり、該ベース層上に形成されたベー
ス電極と、該エミツタ層上に形成されたエミツタ
電極と、該基板裏面に形成されたコレクタ電極と
を有するホツトエレクトロントランジスタにおい
て、 前記第２のバリア層とエミツタ層との間に形成
され、膜厚が10nｍであるノンドープGaAsウエ
ル層を有することを特徴とする半導体装置。[Claims] 1. An n-type film with a thickness of 300 nm on an n-type GaAs substrate.
A GaAs collector layer, a first non-doped Al 0.3 Ga 0.7 As barrier layer with a thickness of 150 nm, an n-type Al 0.1 Ga 0.9 As base layer with a thickness of 50 nm, and a second non-doped Al 0.3 with a thickness of 25 nm. Ga 0.7 As barrier layer,
An Al 0.1 Ga 0.9 As emitter layer with a film thickness of 300 nm is formed in sequence, with a base electrode formed on the base layer, an emitter electrode formed on the emitter layer, and an emitter layer formed on the back surface of the substrate. What is claimed is: 1. A hot electron transistor having a collector electrode, comprising: a non-doped GaAs well layer formed between the second barrier layer and the emitter layer and having a thickness of 10 nm.
JP16102486A 1986-07-09 1986-07-09 Semiconductor device Granted JPS6316661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16102486A JPS6316661A (en) 1986-07-09 1986-07-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16102486A JPS6316661A (en) 1986-07-09 1986-07-09 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6316661A JPS6316661A (en) 1988-01-23
JPH058869B2 true JPH058869B2 (en) 1993-02-03

Family

ID=15727136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16102486A Granted JPS6316661A (en) 1986-07-09 1986-07-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6316661A (en)

Also Published As

Publication number Publication date
JPS6316661A (en) 1988-01-23

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