JPH0576041U - Dry etching equipment - Google Patents
Dry etching equipmentInfo
- Publication number
- JPH0576041U JPH0576041U JP1457092U JP1457092U JPH0576041U JP H0576041 U JPH0576041 U JP H0576041U JP 1457092 U JP1457092 U JP 1457092U JP 1457092 U JP1457092 U JP 1457092U JP H0576041 U JPH0576041 U JP H0576041U
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- dry etching
- base
- guide portion
- back surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
(57)【要約】
【目的】 簡単な構成によりウェハの裏面全体をドライ
エッチングできるドライエッチング装置を提供する。
【構成】 基台１からウェハａを離間して載置するため
のガイド部２を基台１上に設け、ガイド部２におけるウ
ェハａとの接触部分Ａをテーパー状に形成してある。
(57) [Summary] [Object] To provide a dry etching apparatus capable of dry etching the entire back surface of a wafer with a simple configuration. [Structure] A guide portion 2 for mounting a wafer a apart from a base 1 is provided on the base 1, and a contact portion A of the guide portion 2 with the wafer a is formed in a tapered shape.
Description
【０００１】[0001]
本考案は、ドライエッチング装置に関するものである。 The present invention relates to a dry etching device.
【０００２】[0002]
半導体装置を製造する際、例えば、ＬＯＣＯＳ（LOCal Oxidation of Silicon ）形成用に成膜した窒化シリコンがウェハ裏面に残っていると、その後の工程に おいてウェハにそりが生じることがあるため、ウェハ裏面の窒化シリコンをプラ ズマ等のドライエッチングにより除去している。このための従来のドライエッチ ング装置は、図３に示すように、基台２１からウェハｂを離間して載置するため のガイド部２２が設けてあり、このガイド部２２はウェハとの接触部分が水平と なっていた。 When manufacturing a semiconductor device, for example, if the silicon nitride film formed for LOCOS (LOCal Oxidation of Silicon) formation remains on the back surface of the wafer, the wafer may warp in the subsequent steps. The silicon nitride on the back surface is removed by dry etching such as plasma. As shown in FIG. 3, the conventional dry etching apparatus for this purpose is provided with a guide portion 22 for placing the wafer b away from the base 21, and the guide portion 22 makes contact with the wafer. The part was horizontal.
【０００３】[0003]
上記従来のドライエッチング装置では、ガイド部におけるウェハとの接触部分 が水平であるため、ウェハの裏面とガイド部が密着する部分ができ、その部分の 窒化シリコンがエッチングされない。 In the conventional dry etching apparatus described above, since the contact portion of the guide portion with the wafer is horizontal, there is a portion where the back surface of the wafer and the guide portion are in close contact with each other, and the silicon nitride in that portion is not etched.
【０００４】 本考案は、簡単な構成によりウェハの裏面全体をドライエッチングできるドラ イエッチング装置を提供することを目的としている。An object of the present invention is to provide a dry etching apparatus capable of dry etching the entire back surface of a wafer with a simple structure.
【０００５】[0005]
本考案は、基台からウェハを離間して載置するためのガイド部を上記基台上に 設け、上記ガイド部におけるウェハとの接触部分をテーパー状に形成することに より、上記課題を解決するものである。 The present invention solves the above-mentioned problems by providing a guide part on the base for placing the wafer away from the base, and forming a contact portion of the guide part with the wafer in a tapered shape. To do.
【０００６】[0006]
以下、本考案の一実施例を図面に基づいて説明する。 An embodiment of the present invention will be described below with reference to the drawings.
【０００７】 図１はプラズマドライエッチング装置の内部構成の一部にウェハを載置した状 態の断面を示したものであり、同図において、１は基台、２は基台１からウェハ を離間して載置するためのガイド部であり、ウェハａを載置する接触部分Ａをテ ーパー状に形成してある。FIG. 1 shows a cross section of a state in which a wafer is placed on a part of the internal structure of a plasma dry etching apparatus. In FIG. 1, 1 is a base and 2 is a wafer from the base 1. A guide portion for placing the wafer a apart from each other, and a contact portion A on which the wafer a is placed is formed in a taper shape.
【０００８】 図２にガイド部２にウェハａを載置した状態を拡大して示す。同図のように、 ウェハを載置するための接触部分Ａをテーパー状に形成してあるので、ウェハａ の裏面とガイド部２とが従来のように密着することがなく、ウェハａの裏面全体 が完全にドライエッチングされる。FIG. 2 is an enlarged view showing a state where the wafer a is placed on the guide portion 2. As shown in the figure, since the contact portion A for mounting the wafer is formed in a tapered shape, the back surface of the wafer a and the guide portion 2 do not adhere to each other as in the conventional case, and the back surface of the wafer a is not contacted. The whole is completely dry-etched.
【０００９】[0009]
本考案によれば、簡単な構成によりウェハの裏面全体をドライエッチングする ことが可能である。 According to the present invention, it is possible to dry-etch the entire back surface of a wafer with a simple structure.
【図面の簡単な説明】[Brief description of drawings]
【図１】本考案の一実施例を説明するための説明図FIG. 1 is an explanatory view for explaining an embodiment of the present invention.
【図２】本考案の一実施例を説明するための説明図FIG. 2 is an explanatory view for explaining an embodiment of the present invention.
【図３】従来例を説明するための説明図FIG. 3 is an explanatory diagram for explaining a conventional example.
１ 基台 ２ ガイド部 1 base 2 guide part
Claims (1)
のガイド部を上記基台上に設け、上記ガイド部における
ウェハとの接触部分をテーパー状に形成したことを特徴
とするドライエッチング装置。1. A dry etching, characterized in that a guide portion for mounting a wafer on a base apart from the base is provided on the base, and a contact portion of the guide portion with the wafer is formed in a tapered shape. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1457092U JPH0576041U (en) | 1992-03-18 | 1992-03-18 | Dry etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1457092U JPH0576041U (en) | 1992-03-18 | 1992-03-18 | Dry etching equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0576041U true JPH0576041U (en) | 1993-10-15 |
Family
ID=11864820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1457092U Pending JPH0576041U (en) | 1992-03-18 | 1992-03-18 | Dry etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0576041U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0397869A (en) * | 1989-08-25 | 1991-04-23 | Applied Materials Inc | Method and apparatus for removing contaminant from back side and edge of semiconductor wafer |
| JP3128948B2 (en) * | 1992-05-26 | 2001-01-29 | 株式会社日立製作所 | Coordinate input device |
-
1992
- 1992-03-18 JP JP1457092U patent/JPH0576041U/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0397869A (en) * | 1989-08-25 | 1991-04-23 | Applied Materials Inc | Method and apparatus for removing contaminant from back side and edge of semiconductor wafer |
| JP3128948B2 (en) * | 1992-05-26 | 2001-01-29 | 株式会社日立製作所 | Coordinate input device |
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