JPH0574767A - Wiring pattern structure - Google Patents
Wiring pattern structureInfo
- Publication number
- JPH0574767A JPH0574767A JP23632791A JP23632791A JPH0574767A JP H0574767 A JPH0574767 A JP H0574767A JP 23632791 A JP23632791 A JP 23632791A JP 23632791 A JP23632791 A JP 23632791A JP H0574767 A JPH0574767 A JP H0574767A
- Authority
- JP
- Japan
- Prior art keywords
- wiring pattern
- resin
- substrate
- metal
- metal particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は基板あるいは半導体素子
上に形成した配線パターンの構造に係わり、更に詳しく
は安価であり微細なピッチに好適な配線パターンの構造
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring pattern structure formed on a substrate or a semiconductor element, and more particularly to a wiring pattern structure which is inexpensive and suitable for a fine pitch.
【０００２】[0002]
【従来の技術】図４は、ガラス基板上に配線パターンを
形成した従来例を示す断面図であり、１０１はガラス基
板、１０２は基板１０１上に形成された透明導電膜、１
０３は透明導電膜１０２上に形成された金属膜である。
また図５はガラスエポキシ基板上に銅箔により配線パタ
ーンを形成した従来例を示す断面図であり、１０４はガ
ラスエポキシ基板、１０５は接着剤、１０６はＣｕ箔で
ある。2. Description of the Related Art FIG. 4 is a sectional view showing a conventional example in which a wiring pattern is formed on a glass substrate, 101 is a glass substrate, 102 is a transparent conductive film formed on the substrate 101, and 1 is a transparent conductive film.
Reference numeral 03 is a metal film formed on the transparent conductive film 102.
FIG. 5 is a cross-sectional view showing a conventional example in which a wiring pattern is formed on a glass epoxy substrate with a copper foil, 104 is a glass epoxy substrate, 105 is an adhesive, and 106 is a Cu foil.
【０００３】図４に示したガラス基板上への配線パター
ンの形成方法は以下の通りである。まず、酸化イリジュ
ウム等で形成される透明導電膜１０２を真空スパッタ装
置等を用いてガラス基板１０１の一面全体に０．１μｍ
程度成長させる。この透明導電膜１０２上にレジスト等
を用いて配線パターンを描画し、基板１０１をエッチン
グ液に浸しレジストの覆っていない部分の透明導電膜１
０２を溶解除去する。レジストをレジスト除去のエッチ
ング液で除去し、さらに必要に応じて透明導電膜１０２
上にＮｉ、Ａｕ等の金属膜１０３を無電解メッキ法等に
より０．１〜０．５μｍ程度形成する。The method of forming the wiring pattern on the glass substrate shown in FIG. 4 is as follows. First, the transparent conductive film 102 made of iridium oxide or the like is formed on the entire surface of the glass substrate 101 by 0.1 μm by using a vacuum sputtering apparatus or the like.
Grow to a degree. A wiring pattern is drawn on the transparent conductive film 102 by using a resist or the like, and the substrate 101 is dipped in an etching solution so that the transparent conductive film 1 is not covered with the resist.
02 is dissolved and removed. The resist is removed with an etching solution for removing the resist, and if necessary, the transparent conductive film 102.
A metal film 103 made of Ni, Au, or the like is formed on the upper surface by electroless plating to have a thickness of about 0.1 to 0.5 μm.
【０００４】図５に示したガラスエポキシ基板上への配
線パターンの形成方法は以下の通りである。まず、ガラ
スエポキシ基板１０４の片面全面に３５μｍ程度の厚み
を持つＣｕ箔１０６を接着剤１０５を用いて接着する。
次にＣｕ箔１０６上にレジスト等を用いて配線パターン
を描画し、Ｃｕのエッチング液にガラスエポキシ基板１
０４を浸漬しレジストの覆っていない部分のＣｕ箔１０
６を溶解除去し、さらにレジストをエッチング除去する
ことで配線パターンを形成する。The method of forming the wiring pattern on the glass epoxy substrate shown in FIG. 5 is as follows. First, a Cu foil 106 having a thickness of about 35 μm is bonded to the entire surface of one surface of the glass epoxy substrate 104 using an adhesive agent 105.
Next, a wiring pattern is drawn on the Cu foil 106 using a resist or the like, and the glass epoxy substrate 1 is applied to the Cu etching solution.
Cu foil 10 in a portion not covered with resist by immersing 04
6 is dissolved and removed, and the resist is removed by etching to form a wiring pattern.
【０００５】[0005]
【発明が解決しようとする課題】上記従来技術では、例
えばガラス基板上に配線パターンを形成する前述の方法
においては、真空スパッタリング方法等のコストの高い
工程を用いるため、配線パターンの製造単価が高くな
る。さらに、真空スパッタリング方法で形成される薄膜
は、膜厚を厚くする事が物理的にも経済的にも困難なた
め、形成された配線パターンの抵抗が大きくならざるを
得ない。抵抗を下げるために金属膜をメッキするとさら
にコストの増加を招く。また、前述のガラスエポキシ基
板上への配線パターンの形成方法においては、配線パタ
ーンがＣｕの厚膜で構成されているため抵抗は小さく抑
えることが出来るが、Ｃｕ箔のエッチング時にサイドエ
ッチ等の現象が生じるため、配線パターンのピッチを細
密にすることが出来なかった。本発明は、上記の課題を
解決すべくなされたもので、安価な工程により配線パタ
ーンを形成し、なおかつ微細ピッチの配線パターンを形
成することを目的としたものである。In the above-mentioned prior art, for example, in the above-described method of forming a wiring pattern on a glass substrate, a costly process such as a vacuum sputtering method is used, so that the manufacturing cost of the wiring pattern is high. Become. Further, it is difficult to increase the thickness of the thin film formed by the vacuum sputtering method physically and economically, so that the resistance of the formed wiring pattern must be increased. If a metal film is plated to reduce the resistance, the cost will be further increased. Further, in the above-described method of forming a wiring pattern on the glass epoxy substrate, since the wiring pattern is made of a thick film of Cu, the resistance can be suppressed to a small value, but when etching the Cu foil, a phenomenon such as side etching occurs. Therefore, the pitch of the wiring pattern could not be made fine. The present invention has been made to solve the above problems, and an object of the present invention is to form a wiring pattern by an inexpensive process and to form a wiring pattern with a fine pitch.
【０００６】[0006]
【課題を解決するための手段】上記目的は、基板あるい
は半導体素子上に金属粒子を一様に分散させた樹脂によ
るパターンを形成し、無電解メッキ浴中で金属粒子を核
として成長させた金属膜により配線パターンを形成する
ことにより達成される。Means for Solving the Problems The above-mentioned object is to form a pattern of a resin in which metal particles are uniformly dispersed on a substrate or a semiconductor element, and grow the metal particles as nuclei in an electroless plating bath. This is achieved by forming a wiring pattern with a film.
【０００７】[0007]
【作用】基板あるいは半導体素子上に金属粒子を含有し
た樹脂の層を形成し、樹脂を選択的に硬化させ未硬化部
分を取り除いた後、無電解メッキ浴に浸漬し、金属粒子
を核として成長した金属膜が樹脂上を覆うことにより配
線パターンが形成される。[Function] A resin layer containing metal particles is formed on a substrate or a semiconductor element, the resin is selectively cured to remove the uncured portion, and then the resin is immersed in an electroless plating bath to grow using the metal particles as nuclei. A wiring pattern is formed by covering the resin with the formed metal film.
【０００８】[0008]
【実施例】以下、実施例により本発明の詳細を説明す
る。The present invention will be described in detail below with reference to examples.
【０００９】図１は、本発明の一実施例を示す配線パタ
ーンの断面図であり、図２（Ａ）〜図２（Ｃ）は、図１
に示した配線パターンを形成する工程を示した断面図で
あり、図３は本発明の一応用例を示した斜視図である。
１は基板、２は樹脂、３は金属性の粒子、３ａは樹脂２
より突出した金属粒子、４は金属膜、２ａは樹脂２の硬
化した領域、２ｂは樹脂２の未硬化領域、５はマスク、
６は紫外線の照射方向を示す矢印、７は金属配線、８は
電極、９は半導体素子、１０は本発明による配線パター
ン、１１は金属線、１２は半導体素子９上の保護膜であ
る。FIG. 1 is a sectional view of a wiring pattern showing an embodiment of the present invention, and FIGS. 2 (A) to 2 (C) are shown in FIG.
4 is a cross-sectional view showing a step of forming the wiring pattern shown in FIG. 3, and FIG. 3 is a perspective view showing an application example of the present invention.
1 is a substrate, 2 is resin, 3 is metallic particles, and 3a is resin 2.
More protruding metal particles, 4 is a metal film, 2a is a cured region of resin 2, 2b is an uncured region of resin 2, 5 is a mask,
6 is an arrow indicating the direction of irradiation of ultraviolet rays, 7 is a metal wiring, 8 is an electrode, 9 is a semiconductor element, 10 is a wiring pattern according to the present invention, 11 is a metal wire, and 12 is a protective film on the semiconductor element 9.
【００１０】まず、ガラス性の基板１上に０．１〜１μ
ｍの粒径を持つＡｇ−Ｐｄ粒子３を５〜２０％含有する
樹脂２を適量滴下する。このガラス基板１をスピンコー
ターにより３０００ｒｐｍの回転速度で２０秒間回転さ
せ、ガラス基板１上に樹脂２を約２μｍの厚みとなるよ
う形成した。このとき樹脂２の厚みは、樹脂２の粘度お
よびスピンコーターの回転速度を変化させることにより
０．２〜１５０μｍの範囲内の任意の値に設定すること
が可能であり、また樹脂２の塗布方法を凹版印刷あるい
は、スキージによるレベリング等を用いることにより２
０μｍ〜数ｍｍの範囲の値にすることも可能である。樹
脂２として、紫外線硬化型のポリイミド系樹脂を用いて
いる。このようにして図２（Ａ）に示した構造を得る。First, 0.1 to 1 μm is formed on the glass substrate 1.
An appropriate amount of resin 2 containing 5 to 20% of Ag-Pd particles 3 having a particle diameter of m is dropped. The glass substrate 1 was rotated by a spin coater at a rotation speed of 3000 rpm for 20 seconds to form the resin 2 on the glass substrate 1 so as to have a thickness of about 2 μm. At this time, the thickness of the resin 2 can be set to an arbitrary value within the range of 0.2 to 150 μm by changing the viscosity of the resin 2 and the rotation speed of the spin coater. 2 by using intaglio printing or squeegee leveling
It is also possible to set the value in the range of 0 μm to several mm. As the resin 2, an ultraviolet curable polyimide resin is used. In this way, the structure shown in FIG. 2A is obtained.
【００１１】次に、図２（Ｂ）に示すように樹脂２上に
マスク５を位置合わせし、紫外線を３０ｍＪ／ｃｍ2の
照度で３０秒間矢印６の方向に照射し、樹脂２を選択的
に硬化させ、硬化領域２ａおよび未硬化領域２ｂを得
る。このガラス基板１を樹脂２の溶解液に２分間浸漬
し、未硬化領域２ｂを除去することで図２（Ｃ）に示し
た構造を得る。この時、樹脂２の硬化領域２ａの樹脂表
面も０．０５〜０．１μｍ溶解するため金属粒子３ａの
様に樹脂２の表面近傍にある金属粒子３は樹脂２の表面
より突出することになる。このガラス基板１を７０℃に
加温したＮｉ無電解メッキ浴中に約１０分浸漬する。メ
ッキ浴中のＮｉは樹脂２より突出した金属粒子３ａを核
として成長をはじめ樹脂２の表面を覆い図１に示すよう
にＮｉ金属膜４が約１μｍ成長し配線パターンが形成さ
れる。Ｎｉメッキの厚みは、メッキ液の種類およびメッ
キ時間により０．０５μｍから３０μｍ程度まで任意の
厚みに設定可能であるが、通常用いられるような配線パ
ターンの場合は１〜５μｍの厚みで十分である。また、
金属粒子３ａのアンカー効果により金属膜４と樹脂２と
の密着力を大幅に向上させている。Next, as shown in FIG. 2B, a mask 5 is aligned on the resin 2 and ultraviolet rays are irradiated in the direction of arrow 6 for 30 seconds at an illuminance of 30 mJ / cm 2 to selectively coat the resin 2. Then, the cured region 2a and the uncured region 2b are obtained. The glass substrate 1 is dipped in a solution of the resin 2 for 2 minutes to remove the uncured region 2b to obtain the structure shown in FIG. 2 (C). At this time, the resin surface of the cured region 2a of the resin 2 is also melted by 0.05 to 0.1 μm, so that the metal particles 3 near the surface of the resin 2 like the metal particles 3a project from the surface of the resin 2. .. The glass substrate 1 is immersed in a Ni electroless plating bath heated to 70 ° C. for about 10 minutes. Ni in the plating bath begins to grow with the metal particles 3a protruding from the resin 2 as a nucleus and covers the surface of the resin 2, and the Ni metal film 4 grows by about 1 μm to form a wiring pattern as shown in FIG. The thickness of the Ni plating can be set to any thickness from 0.05 μm to 30 μm depending on the type of plating solution and the plating time, but in the case of a wiring pattern that is usually used, a thickness of 1 to 5 μm is sufficient. .. Also,
The adhesion effect between the metal film 4 and the resin 2 is greatly improved by the anchor effect of the metal particles 3a.
【００１２】このようにして形成された配線パターン
は、真空スパッタ装置の如き高価で巨大な製造設備を必
要とせず、また紫外線感光樹脂をパターンの形成に用い
ていることから微細なピッチの配線が容易である。また
配線パターンの高さ及び面積を任意の大きさにする事が
可能であり、例えば図３に示したように他の金属配線７
や電極８を有するような半導体素子９上に本発明による
配線パターン１０を形成し、更に配線パターン１０同
士、あるいは配線パターン１０と他の電極８や金属配線
７等を金属線１１を用いて立体的に接続することが容易
に行え、また樹脂の特性から凹凸を有する基板、あるい
は柔軟性を有する基板上にも対応することが出来る。The wiring pattern formed in this manner does not require expensive and huge manufacturing equipment such as a vacuum sputtering apparatus, and since the ultraviolet photosensitive resin is used for forming the pattern, wiring with a fine pitch can be formed. It's easy. Further, the height and area of the wiring pattern can be arbitrarily set. For example, as shown in FIG.
The wiring pattern 10 according to the present invention is formed on the semiconductor element 9 having the electrodes 8 and the electrodes 8, and the wiring patterns 10 or the wiring pattern 10 and other electrodes 8 and the metal wiring 7 are three-dimensionally formed by using the metal wire 11. Can be easily connected electrically, and it can be applied to a substrate having irregularities or a substrate having flexibility due to the characteristics of the resin.
【００１３】[0013]
【発明の効果】以上の説明から明らかなように、本発明
は基板あるいは半導体素子上に金属粒子含有する樹脂を
配置し、前記樹脂上に金属膜を製膜する事により、低コ
ストで微細なピッチの配線パターンを提供できる。ま
た、凹凸や曲面を有する表面上にも配線パターンを形成
でき、さらに柔軟性を有し折り曲げて使用するような基
板上にも配線パターンを形成することが可能となる。As is apparent from the above description, according to the present invention, a resin containing metal particles is arranged on a substrate or a semiconductor element, and a metal film is formed on the resin, whereby a fine pattern can be produced at low cost. A pitch wiring pattern can be provided. In addition, the wiring pattern can be formed on the surface having the unevenness or the curved surface, and the wiring pattern can be formed on the substrate which is flexible and can be bent and used.
【図１】本発明による配線パターンの一実施例を示した
断面図である。FIG. 1 is a sectional view showing an embodiment of a wiring pattern according to the present invention.
【図２】本発明による配線パターンの製造工程を示した
断面図である。FIG. 2 is a cross-sectional view showing a manufacturing process of a wiring pattern according to the present invention.
【図３】本発明による配線パターンの一応用例を示した
斜視図である。FIG. 3 is a perspective view showing an application example of a wiring pattern according to the present invention.
【図４】従来例による配線パターンを示した断面図であ
る。FIG. 4 is a cross-sectional view showing a wiring pattern according to a conventional example.
【図５】従来例による配線パターンを示した断面図であ
る。FIG. 5 is a sectional view showing a wiring pattern according to a conventional example.
１ 基板 ２ 樹脂 ２ａ 樹脂２の硬化領域 ２ｂ 樹脂２の未硬化領域 ３ 金属粒子 ３ａ 樹脂２より突出した金属粒子 ４ 金属膜 ５ マスク ６ 紫外線の照射方向を示す矢印 ７ 金属配線 ８ 電極 ９ 半導体素子 １０ 本発明による配線パターン １１ 金属線 １２ 保護膜 １０１ ガラス基板 １０２ 透明導電膜 １０３ 金属膜 １０４ ガラスエポキシ基板 １０５ 接着剤 １０６ Ｃｕ箔 DESCRIPTION OF SYMBOLS 1 Substrate 2 Resin 2a Cured region 2 of resin 2 Uncured region of resin 2 3 Metal particles 3a Metal particles protruding from resin 2 4 Metal film 5 Mask 6 Arrows indicating the irradiation direction of ultraviolet rays 7 Metal wiring 8 Electrode 9 Semiconductor element 10 Wiring pattern according to the present invention 11 Metal line 12 Protective film 101 Glass substrate 102 Transparent conductive film 103 Metal film 104 Glass epoxy substrate 105 Adhesive 106 Cu foil
Claims (3)
は半導体素子上に形成する配線パターンにおいて、前記
基板あるいは前記半導体素子上に、金属粒子を含有した
樹脂を配置し、前記樹脂上に金属被覆を施すことにより
形成したことを特徴とする配線パターンの構造。1. In a wiring pattern formed on a substrate or a semiconductor element for the purpose of transmitting an electric signal, a resin containing metal particles is arranged on the substrate or the semiconductor element, and the resin is metal-coated. A wiring pattern structure characterized by being formed by applying
線、電子線、等の空間における直進性を有するエネルギ
ー伝送体により選択的に硬化し、かつまた未硬化領域を
選択的に溶解、あるいは分解、あるいは溶融除去するこ
とが可能な樹脂を用いた請求項１記載の配線パターンの
構造。2. The resin as described above is selectively cured by an energy transfer material having a linear property in a space such as visible light, ultraviolet ray, infrared ray, electron beam, etc., and an uncured region is selectively dissolved or decomposed. The structure of the wiring pattern according to claim 1, wherein a resin capable of being melted and removed is used.
ｄ、Ｃｕ、Ｚｎ、Ｓｎ、Ａｇ、等の無電解メッキ可能な
金属、あるいは前記金属の合金による金属粒子を用いた
請求項１記載の配線パターンの構造。3. The metal particles include Ni, Co and P.
The structure of a wiring pattern according to claim 1, wherein a metal capable of electroless plating such as d, Cu, Zn, Sn, Ag, or metal particles of an alloy of the metal is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23632791A JPH0574767A (en) | 1991-09-17 | 1991-09-17 | Wiring pattern structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23632791A JPH0574767A (en) | 1991-09-17 | 1991-09-17 | Wiring pattern structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0574767A true JPH0574767A (en) | 1993-03-26 |
Family
ID=16999165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23632791A Pending JPH0574767A (en) | 1991-09-17 | 1991-09-17 | Wiring pattern structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0574767A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007000833A1 (en) * | 2005-06-29 | 2007-01-04 | Harima Chemicals, Inc. | Method for electrically conductive circuit formation |
| JP2014011281A (en) * | 2012-06-29 | 2014-01-20 | Shinwa Industry Co Ltd | Conductive pattern forming method and electric wiring circuit board manufactured using the same |
| JP2016058545A (en) * | 2014-09-09 | 2016-04-21 | 住友電気工業株式会社 | Substrate for printed wiring board, printed wiring board and method of manufacturing printed wiring board |
-
1991
- 1991-09-17 JP JP23632791A patent/JPH0574767A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007000833A1 (en) * | 2005-06-29 | 2007-01-04 | Harima Chemicals, Inc. | Method for electrically conductive circuit formation |
| JPWO2007000833A1 (en) * | 2005-06-29 | 2009-01-22 | ハリマ化成株式会社 | Method for forming conductive circuit |
| KR100957737B1 (en) * | 2005-06-29 | 2010-05-12 | 하리마 카세이 가부시키가이샤 | Method for electrically conductive circuit formation |
| JP4599403B2 (en) * | 2005-06-29 | 2010-12-15 | ハリマ化成株式会社 | Method for forming conductive circuit |
| JP2014011281A (en) * | 2012-06-29 | 2014-01-20 | Shinwa Industry Co Ltd | Conductive pattern forming method and electric wiring circuit board manufactured using the same |
| JP2016058545A (en) * | 2014-09-09 | 2016-04-21 | 住友電気工業株式会社 | Substrate for printed wiring board, printed wiring board and method of manufacturing printed wiring board |
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