JPH0567026U - Through electrode of substrate - Google Patents
Through electrode of substrateInfo
- Publication number
- JPH0567026U JPH0567026U JP1241792U JP1241792U JPH0567026U JP H0567026 U JPH0567026 U JP H0567026U JP 1241792 U JP1241792 U JP 1241792U JP 1241792 U JP1241792 U JP 1241792U JP H0567026 U JPH0567026 U JP H0567026U
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- Prior art keywords
- substrate
- electrode
- hole
- film
- magnetic
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- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
(57)【要約】
【目的】 本発明は、貫通電極としての信頼性を向上す
る。
【構成】 基板１０を表裏方向に貫通する貫通孔３０を
形成し、この貫通孔３０内に基板１０の表裏間を導通接
続する貫通電極１２を設けてなる基板であって、貫通孔
３０の内面に導電性被膜１２を形成し、かつ貫通孔３０
内に絶縁体１３を充填する。
【効果】 基板の貫通孔が消滅して平坦化され、スピン
コート等によるレジストが均一に塗布でき、しかも、貫
通孔内にレジスト等の異物の残留が解消できることか
ら、貫通電極の信頼性を向上させることができ、また、
センサ形成面に凹凸がないため、保護膜による封止信頼
性も向上できる。
(57) [Summary] [Object] The present invention improves reliability as a through electrode. A substrate having a through hole (30) penetrating the substrate (10) in the front-back direction, and a through electrode (12) electrically connecting between the front and back of the substrate (10) is provided in the through hole (30), and an inner surface of the through hole (30). A conductive coating 12 is formed on the
The inside is filled with the insulator 13. [Effect] Since the through holes of the substrate are eliminated and flattened, the resist can be uniformly applied by spin coating or the like, and foreign substances such as resist can be eliminated in the through holes, so that the reliability of the through electrodes is improved. Can also be
Since there is no unevenness on the sensor forming surface, the sealing reliability of the protective film can be improved.
Description
【０００１】[0001]
本考案は、基板の貫通電極に関する。さらに詳述すると、本考案は、特に基板 の表面に磁気抵抗素子やホール素子等を形成した磁気センサに好適な基板の貫通 電極に関する。 The present invention relates to a through electrode of a substrate. More specifically, the present invention relates to a through electrode of a substrate, which is suitable for a magnetic sensor in which a magnetoresistive element, a Hall element or the like is formed on the surface of the substrate.
【０００２】[0002]
この種の基板、特に表面に磁気検知部を形成したチップ基板の貫通電極は図５ に示すように中空構造になっている。この貫通電極１の導電性被膜２は、Ａｇ、 Ｃｕ等の単金属もしくはそれらの金属の合金を主成分とする金属材料を、基板３ に形成した貫通孔４の内面に印刷形成した後に焼成することにより形成される。 The through electrode of this type of substrate, particularly a chip substrate having a magnetic detection portion formed on the surface thereof, has a hollow structure as shown in FIG. The conductive coating film 2 of the through electrode 1 is formed by printing a metal material containing a single metal such as Ag or Cu or an alloy of these metals as a main component on the inner surface of the through hole 4 formed in the substrate 3 and then firing it. It is formed by
【０００３】[0003]
従来の基板の貫通電極のように内部を中空構造とした場合、特に磁気センサ用 であるときは、表面の磁気検知部及び貫通電極１には、一般に信頼性を確保する ために保護膜を形成する必要がある。しかしながら、貫通電極１の直径は微細で あり、しかも、形状が複雑な貫通孔４内に保護膜を形成することは、技術的にも きわめて困難であることから保護膜の信頼性が低くなる。この結果、水分の侵入 によって導電性被膜２が断線する等の不良が生ずる原因となっている。また、貫 通孔４が形成されていると、スピンコートによる均一なレジスト形成が困難であ り、均一性が低下して歩留りが著しく低下する他、貫通孔４内にレジストが残留 する場合があり、このレジストによって、表面の磁気検知部を汚染する問題点が ある。 When the inside has a hollow structure like a through electrode of a conventional substrate, especially for a magnetic sensor, a protective film is generally formed on the surface magnetic detection portion and the through electrode 1 to ensure reliability. There is a need to. However, it is technically extremely difficult to form the protective film in the through-hole 4 having a fine diameter and a complicated shape, and therefore the reliability of the protective film becomes low. As a result, intrusion of water causes a defect such as disconnection of the conductive film 2. Further, when the through holes 4 are formed, it is difficult to form a uniform resist by spin coating, the uniformity is deteriorated, the yield is significantly reduced, and the resist may remain in the through holes 4. However, there is a problem that this resist contaminates the magnetic detection portion on the surface.
【０００４】 本考案は、このような問題点を解消するためになされたもので、内面に導電性 被膜を形成した貫通孔内に絶縁体を充填することによって、貫通電極としての信 頼性を向上することのできる基板の貫通電極を提供することを目的とする。The present invention has been made in order to solve such a problem, and by filling the inside of the through hole having the conductive coating film with an insulator, the reliability of the through electrode can be improved. It is an object to provide a through electrode of a substrate that can be improved.
【０００５】[0005]
本考案は、基板を表裏方向に貫通する貫通孔を形成し、この貫通孔内に上記基 板の表裏間を導通接続する貫通電極を設けてなる基板であって、上記貫通孔の内 面に導電性被膜を形成し、かつ貫通孔内に絶縁体を充填したことを特徴とする。 The present invention is a substrate in which a through hole penetrating the substrate in the front and back direction is formed, and a through electrode for electrically connecting between the front and back of the substrate is provided in the through hole, the inner surface of the through hole being formed. It is characterized in that a conductive film is formed and the through holes are filled with an insulator.
【０００６】[0006]
内面に導電性被膜を形成た貫通孔内に絶縁体を充填すると、基板の貫通孔が消 滅して平坦化され、スピンコート等によりレジストが均一に塗布でき、しかも、 貫通孔内にレジスト等の異物の残留が解消できることから、貫通電極の信頼性が 向上する。また、基板を磁気センサ等に使用する場合は、貫通孔の無い平坦な基 板が形成されるので、表面に磁気検知部等を形成するためのパターン転写の精度 及び基板間の均一性や再現性が良好となって、均一なセンサが歩留り良く製造で きる。 By filling the inside of the through-hole with the conductive coating with an insulator, the through-hole of the substrate is extinguished and flattened, and the resist can be evenly applied by spin coating or the like. Since the residual foreign matter can be eliminated, the reliability of the through electrode is improved. When using a substrate for a magnetic sensor, etc., a flat substrate without through-holes is formed, so the accuracy of pattern transfer for forming a magnetic detection part, etc. on the surface and the uniformity and reproduction between substrates As a result, a uniform sensor can be manufactured with high yield.
【０００７】[0007]
以下、図面を参照しながら本考案にかかる基板の貫通電極の実施例について説 明する。 図１において、基板１０は、アルミナ等のセラミック、或いは結晶化ガラス等 の材料によって形成されている。中でも特に貫通電極を形成する上では、感光性 結晶化ガラスが好ましい。かかる基板１０には、図３の（Ａ）（Ｂ）に示すよう な基板１０の内方に、基板１０を表裏方向に貫通する後に詳述する円形の貫通孔 が複数個形成され、この貫通孔内には基板１０の表裏間を導通接続する貫通電極 １１が設けられている。貫通電極１１は、上記貫通孔の内面にＡｇ，Ａｕ，Ｐｔ ，Ｃｕ，Ｍｏもしくはこれら金属の一種または複数種を含む合金からなる導電性 被膜１２が中空円筒状に形成されている。さらに、導電性被膜１２の内部には、 基板１０の熱膨張係数に合わせたシリコン，アルミナ，亜鉛，カルシウム，バリ ウム或いはほうそ等の酸化物、窒化物もしくは炭化物の一種或いは複数種の混合 物よりなる絶縁体１３が充填されている。 Hereinafter, embodiments of the through electrode of the substrate according to the present invention will be described with reference to the drawings. In FIG. 1, the substrate 10 is formed of a ceramic such as alumina or a material such as crystallized glass. Above all, photosensitive crystallized glass is particularly preferable for forming the through electrode. In this substrate 10, a plurality of circular through holes, which will be described in detail after penetrating the substrate 10 in the front-back direction, are formed inside the substrate 10 as shown in FIGS. A through electrode 11 is provided in the hole to electrically connect the front and back of the substrate 10. The through electrode 11 has a hollow cylindrical conductive coating 12 formed on the inner surface of the through hole and made of Ag, Au, Pt, Cu, Mo or an alloy containing one or more of these metals. Further, inside the conductive film 12, one or a mixture of one or more kinds of oxides, nitrides or carbides such as silicon, alumina, zinc, calcium, barium or arsenic according to the thermal expansion coefficient of the substrate 10 is used. Is filled with an insulator 13.
【０００８】 上記貫通電極１１の表裏端面は、基板１０と同一面に平坦に形成され、基板１ ０表面の貫通電極１１上端には配線電極１４が形成されると共に、この配線電極 １４に連通した磁気検知部１５の複数状のストライプが形成されている。さらに これら配線電極１４及び磁気検知部１５を含む基板１０の表面には、外部から物 理化学的なダメージから磁気検知部１５等を保護するための保護膜１６が被膜形 成されている。この保護膜１６としては、例えばシリコン酸化物、窒素化物、ア ルミ酸化物等の無機膜、及びエポキシ樹脂やフェノール樹脂等の有機膜が使用さ れる。The front and back end surfaces of the through electrode 11 are formed flat on the same surface as the substrate 10, and a wiring electrode 14 is formed on the upper end of the through electrode 11 on the surface of the substrate 10 and communicates with the wiring electrode 14. A plurality of stripes of the magnetic detection unit 15 are formed. Further, a protective film 16 is formed on the surface of the substrate 10 including the wiring electrodes 14 and the magnetic sensing portion 15 to protect the magnetic sensing portion 15 and the like from physical damage from the outside. As the protective film 16, for example, an inorganic film made of silicon oxide, a nitride, an aluminum oxide or the like, or an organic film made of an epoxy resin or a phenol resin is used.
【０００９】 さらに、基板１０表面の貫通電極１１下端には、図示しない外部回路等に接続 するための外部リード１７が接続されている。この外部リード１７を含む図示し ない裏面電極等は、外部リード１７に接続するリード線（図示しない）との接続 補強や保護のために、エポキシ樹脂或いはフェノール樹脂等によって保護されて いる。Further, an external lead 17 for connecting to an external circuit (not shown) or the like is connected to the lower end of the through electrode 11 on the surface of the substrate 10. The back surface electrode (not shown) including the external leads 17 is protected by an epoxy resin or a phenol resin to reinforce and protect the connection with a lead wire (not shown) connected to the external leads 17.
【００１０】 図２は貫通電極２０を基板１０の側面に形成した例を示すものである。即ち、 基板１０には、図３の（Ｃ）（Ｄ）及び（Ｅ）に示すように、基板１０の側面或 いは４隅に、基板１０を表裏方向に貫通する略半円形或いは扇形の貫通溝が複数 個形成され、この貫通溝内には基板１０の表裏間を導通接続する貫通電極２１が 設けられている。かかる例においても、貫通電極２１は、上記貫通孔の内面に前 述の例と同様な金属の一種または複数種を含む合金からなる導電性被膜２２が形 成されている。そして、導電性被膜２２の内部には、前述の例と同様の酸化物、 窒化物もしくは炭化物の一種或いは複数種の混合物よりなる絶縁体２３が充填さ れている。この導電性被膜２２及び絶縁体２３は、基板１０の側面と同一面とな るように設けられている。FIG. 2 shows an example in which the through electrode 20 is formed on the side surface of the substrate 10. That is, as shown in FIGS. 3C, 3D, and 3E, the substrate 10 has a substantially semicircular shape or a fan shape that penetrates the substrate 10 in the front-back direction on the side surface or the four corners of the substrate 10. A plurality of through-grooves are formed, and a through-hole electrode 21 that electrically connects the front and back of the substrate 10 is provided in the through-groove. In this example as well, the through electrode 21 has a conductive coating film 22 formed on the inner surface of the through hole and made of an alloy containing one or more of the same metals as in the above example. The inside of the conductive film 22 is filled with an insulator 23 made of one kind or a mixture of plural kinds of oxides, nitrides or carbides similar to the above-mentioned example. The conductive film 22 and the insulator 23 are provided so as to be flush with the side surface of the substrate 10.
【００１１】 基板１０の表面には、前述の例と同様に配線電極１４及び磁気検知部１５が形 成されると共に、保護膜１６が形成されている。保護膜１６は基板１０の側面に 形成した導電性被膜２２及び絶縁体２３を外部の物理化学的なダメージから保護 するために基板１０の側面にも被膜形成されている。また、基板１０の裏面には 前述の例と同様に外部リード１７が接続され、かつエポキシ樹脂等によって保護 されている。On the surface of the substrate 10, the wiring electrode 14 and the magnetic sensing portion 15 are formed as in the above-described example, and the protective film 16 is formed. The protective film 16 is also formed on the side surface of the substrate 10 in order to protect the conductive film 22 and the insulator 23 formed on the side surface of the substrate 10 from external physicochemical damage. Further, the external leads 17 are connected to the back surface of the substrate 10 as in the above-mentioned example, and are protected by an epoxy resin or the like.
【００１２】 次に、かかる基板の貫通電極の製造方法の一例について、磁気センサの製造方 法を含め図４に基づいて説明する。まず、基板１０のとしては、アルミナ等のセ ラミック基板、或いはガラスや結晶化ガラス基板等の基板材料を使用し、（Ａ） の如く基板１０に表裏方向に貫通する貫通孔３０を形成する。この貫通孔３０は セラミック基板にあっては、グリーンシート状態にてパンチプレスにより穿設す る方法や、焼成後にレーザー加工等により穿設する方法が採用される。また、ガ ラス基板にあっては、フォトリソグラフィ技術によるエッチング加工により穿設 する方法や、超音波印加によるドリル加工により穿設する方法が採用される。さ らに、感光性結晶化ガラス基板にあっては、貫通孔３０を形成する位置に紫外線 を照射した後に熱処理を行い、その後弗酸によって紫外線を照射した部分を溶解 することにより光化学的に穿設する方法が採用され、基板表面に磁気センサを形 成する場合には、上記感光性結晶化ガラス基板が好適である。Next, an example of a method of manufacturing the through electrode of the substrate will be described based on FIG. 4 including a method of manufacturing the magnetic sensor. First, as the substrate 10, a ceramic substrate such as alumina, or a substrate material such as glass or a crystallized glass substrate is used, and through holes 30 are formed in the substrate 10 as shown in FIG. For the ceramic substrate, the through hole 30 may be formed by punching in a green sheet state, or by laser processing after firing. For a glass substrate, a method of making a hole by etching using a photolithography technique or a method of making a hole by drilling by applying ultrasonic waves is adopted. Furthermore, in the case of the photosensitive crystallized glass substrate, heat treatment is performed after irradiating the position where the through hole 30 is formed with ultraviolet light, and then the portion irradiated with ultraviolet light is dissolved by hydrofluoric acid to perform photochemical perforation. The above-mentioned photosensitive crystallized glass substrate is suitable when the method of installation is adopted and the magnetic sensor is formed on the surface of the substrate.
【００１３】 以上によって穿設された貫通孔３０の内面には、Ａｇ，Ａｕ，Ｐｔ，Ｃｕ，Ｍ ｏもしくはこれら金属の一種または複数種を含む合金からなる導電性被膜１２を 図４（Ｂ）に示すように中空円筒状（スルーホール）に形成する。上記導電性金 属はバイダーと混合されたペースト状のものを使用しても良く、例えばスクリー ン印刷法によって導電性被膜１２を形成する。The conductive film 12 made of Ag, Au, Pt, Cu, Mo, or an alloy containing one or more of these metals is formed on the inner surface of the through hole 30 formed as described above. As shown in, it is formed in a hollow cylindrical shape (through hole). The conductive metal may be in the form of a paste mixed with a binder, and the conductive coating 12 is formed by, for example, a screen printing method.
【００１４】 しかる後に、導電性被膜１２の中空円筒内に、シリコン，アルミナ，亜鉛，カ ルシウム，バリウム或いはほうそ等の酸化物、窒化物もしくは炭化物の一種或い は複数種の混合物よりなる絶縁体１３を、図４（Ｃ）または（Ｄ）の如く充填す る。この絶縁体１３の充填方法としては、例えばスクリーン印刷法が良い。その 後、基板１０の表裏面を研磨し、図４（Ｃ）または（Ｄ）の如く表面から突出し た導電性被膜１２及び絶縁体１３を除去し、図４（Ｅ）のように導電性被膜１２ 及び絶縁体１３の上下端面を基板１０の表面と同一面の平坦に形成することによ り貫通電極１１が形成される。尚、上記導電性被膜１２のの外周面は、基板１０ が密着しているので、封止が省略されると共に、信頼性が向上するので好都合で ある。After that, in the inside of the hollow cylinder of the conductive coating film 12, an insulating film made of one kind or a mixture of plural kinds of oxides, nitrides or carbides such as silicon, alumina, zinc, calcium, barium or hawthorn. The body 13 is filled as shown in FIG. 4 (C) or (D). As a method of filling the insulator 13, for example, a screen printing method is preferable. After that, the front and back surfaces of the substrate 10 are polished to remove the conductive coating 12 and the insulator 13 protruding from the surface as shown in FIG. 4 (C) or (D), and the conductive coating as shown in FIG. 4 (E). The through electrode 11 is formed by forming the upper and lower end surfaces of the insulator 12 and the insulator 13 so as to be flush with the surface of the substrate 10. Since the substrate 10 is in close contact with the outer peripheral surface of the conductive coating 12, sealing is omitted and reliability is improved, which is convenient.
【００１５】 さらに、このように貫通電極１１が形成された基板１０を用いて、磁気抵抗素 子等の磁気センサを製造する場合は、図４（Ｅ）の如く基板１０の表面にパーマ ロイやニッケル−コバルト等の磁性金属からなる磁性膜３１を蒸着もしくはスパ ッタリングによって形成する。その後、磁性膜３１の表面にレジスト３２をスピ ンコートによって被覆する。上記貫通電極１１には絶縁体１３が充填されている ので、基板１０の表面は平坦であることから、スピンコートを施す際に均一厚の レジスト３２が形成される。さらに、磁気検知部３３の複数条のストライプ、及 び配線電極１４を残して他の磁性膜３１を除去する。このとき、配線電極１４の 一部は、平坦に形成された導電性被膜１２の上に位置しており、磁性膜３１を形 成する段階で既に電気的に接続される。しかる後に、磁気検知部３３及び配線電 極１４の表面に残されたレジスト３２（図４（Ｆ）参照）を除去する。Further, when a magnetic sensor such as a magnetoresistive element is manufactured using the substrate 10 on which the through electrode 11 is formed in this way, as shown in FIG. A magnetic film 31 made of a magnetic metal such as nickel-cobalt is formed by vapor deposition or sputtering. Then, the surface of the magnetic film 31 is covered with a resist 32 by spin coating. Since the through electrode 11 is filled with the insulator 13, the surface of the substrate 10 is flat, so that the resist 32 having a uniform thickness is formed when the spin coating is performed. Further, the other magnetic film 31 is removed while leaving the plurality of stripes of the magnetic detection portion 33 and the wiring electrode 14. At this time, a part of the wiring electrode 14 is located on the conductive film 12 formed flat, and is already electrically connected at the stage of forming the magnetic film 31. Then, the resist 32 (see FIG. 4 (F)) left on the surfaces of the magnetic detector 33 and the wiring electrode 14 is removed.
【００１６】 以上の場合、配線電極１４は磁気検知部３３と同じ磁性膜によって形成されて おり、この状態にて実用上の問題はない。しかし、特に、貫通電極１１との電気 的接続を確実にする場合や、配線電極１４を長尺に形成した場合の抵抗値を減少 する場合には、図４（Ｇ）に示すように、配線電極１４の表面に導電率の高い金 属配線膜３４を重合形成することが望ましい。この金属配線膜３４としては、Ｎ ｉ，Ｃｒ，Ｍｏ，Ｆｅ，Ｃｏ，Ａｌ，Ｃｕ，Ａｕ，Ｐｔ，Ａｇの一種もしくは複 数種の合金によって形成される。In the above case, the wiring electrode 14 is formed of the same magnetic film as the magnetic detection portion 33, and there is no practical problem in this state. However, in particular, in the case of ensuring the electrical connection with the through electrode 11 or in the case of reducing the resistance value when the wiring electrode 14 is formed in a long size, as shown in FIG. It is desirable to polymerize and form a metal wiring film 34 having high conductivity on the surface of the electrode 14. The metal wiring film 34 is formed of one or a plurality of alloys of Ni, Cr, Mo, Fe, Co, Al, Cu, Au, Pt and Ag.
【００１７】 その後、配線電極１４及び磁気検知部３３を含む基板１０の表面に、図４（Ｈ ）のように、酸化シリコン（ＳｉＯ2)等の無機膜からなる単層の保護膜１６を蒸 着またはスパッタリング等の手段によって形成したり、または、上記無機膜の表 面にエポキシ樹脂やフェノール樹脂等の有機膜を等の有機膜を積層した保護膜１ ６を形成する。このとき、基板１０の表面が平坦であるので、平面封止で良好な 信頼性が確保できる。そして、基板１０の裏面に露出した導電性被膜１２に外部 リード１７を接続し、貫通電極を形成した基板を用いた磁気センサが完成する。Then, as shown in FIG. 4H, a single-layer protective film 16 made of an inorganic film such as silicon oxide (SiO 2 ) is vaporized on the surface of the substrate 10 including the wiring electrodes 14 and the magnetic sensing portion 33. The protective film 16 is formed by a method such as coating or sputtering, or a protective film 16 is formed by laminating an organic film such as an organic film of epoxy resin or phenol resin on the surface of the inorganic film. At this time, since the surface of the substrate 10 is flat, good reliability can be ensured by plane sealing. Then, the external leads 17 are connected to the conductive film 12 exposed on the back surface of the substrate 10 to complete a magnetic sensor using the substrate on which the through electrodes are formed.
【００１８】 尚、図３（Ｃ）乃至（Ｅ）に示すように、基板１０の側面に貫通電極２１を形 成する場合には、先ず、周知の半導体用ウエハと同等の大きさを有する大きな基 板に、多数個の上記磁気センサを配列しした後、ダイシングする際に上記貫通電 極２１の中心を分割すればよい。この場合には、配線電極１４及び磁気検知部３ ２等の位置については、先に説明した図２に示した配置に設定される。As shown in FIGS. 3C to 3E, when the through electrode 21 is formed on the side surface of the substrate 10, first, a large-sized semiconductor wafer having the same size as a well-known semiconductor wafer is formed. After arranging a large number of the magnetic sensors on the substrate, the center of the through electrode 21 may be divided when dicing. In this case, the positions of the wiring electrode 14 and the magnetic sensing portion 32 are set to the arrangement shown in FIG. 2 described above.
【００１９】 このように、基板１０の側面に貫通電極２１を形成した場合にも、側面が平坦 に形成される。このため、側面に保護膜を１６を形成する際にも、慣用的な平面 封止技術か使用できるので、信頼性が一段と向上する利点がある。As described above, even when the through electrode 21 is formed on the side surface of the substrate 10, the side surface is formed flat. Therefore, even when the protective film 16 is formed on the side surface, the conventional flat surface sealing technique can be used, which has the advantage of further improving the reliability.
【００２０】 本考案は上記の各実施例に限定されるものではなく、貫通電極１１を形成した 基板１０を磁気抵抗素子の磁気センサとしたが、この他にもホール素子等の磁気 センサを形成する等、本考案の要旨を逸脱しない範囲において種々変形実施可能 である。The present invention is not limited to the above embodiments, and the substrate 10 on which the through electrode 11 is formed is used as a magnetic sensor of a magnetoresistive element, but in addition to this, a magnetic sensor such as a Hall element is formed. Therefore, various modifications can be made without departing from the scope of the present invention.
【００２１】[0021]
以上の説明から明らかなように、本考案の基板の貫通電極は、内面に導電性被 膜を形成た貫通孔内に絶縁体を充填しているので、基板の貫通孔が消滅して平坦 化され、スピンコート等によるレジストが均一に塗布でき、しかも、貫通孔内に レジスト等の異物の残留が解消できることから、貫通電極の信頼性を向上させる ことができ、また、センサ形成面に凹凸がないため、保護膜による封止信頼性も 向上できる利点がある。また、基板を磁気センサ等に使用する場合は、貫通孔の 無い平坦な基板が形成されるので、表面に磁気検知部等を形成するためのパター ン転写の精度及び基板間の均一性や再現性が良好となって、均一なセンサが歩留 り良く製造できる利点もある。 As is clear from the above description, since the through electrode of the substrate of the present invention is filled with the insulator in the through hole having the conductive film formed on the inner surface, the through hole of the substrate disappears and is flattened. As a result, the resist can be uniformly applied by spin coating, etc., and the foreign matter such as the resist can be retained in the through holes, so that the reliability of the through electrode can be improved and the sensor forming surface is not uneven. Since it is not present, there is an advantage that the reliability of sealing by the protective film can be improved. When using a substrate for a magnetic sensor, etc., a flat substrate without through-holes is formed. Therefore, the accuracy of pattern transfer for forming the magnetic detection part on the surface and the uniformity and reproduction between the substrates. This also has the advantage that the uniformity is improved and uniform sensors can be manufactured with high yield.
【００２２】[0022]
【図１】本考案にかかる基板の貫通電極の第１の実施例
を示す断面図である。FIG. 1 is a sectional view showing a first embodiment of a through electrode of a substrate according to the present invention.
【図２】同上基板の貫通電極の第２の実施例を示す断面
図である。FIG. 2 is a cross-sectional view showing a second embodiment of a through electrode of the same substrate.
【図３】同上基板の各所に貫通電極を形成した例を示す
斜視図であって、（Ａ）（Ｂ）は基板の内部に貫通電極
を形成した例であり、（Ｃ）（Ｄ）（Ｅ）は基板の側面
に貫通電極を形成した例を示す。FIG. 3 is a perspective view showing an example in which through electrodes are formed at various places on the same substrate, (A) and (B) are examples in which through electrodes are formed inside the substrate, and (C) (D) ( E) shows an example in which a through electrode is formed on the side surface of the substrate.
【図４】同上基板の貫通電極の製造方法を（Ａ）乃至
（Ｈ）に示す工程図である。FIG. 4 is a process diagram showing steps (A) to (H) of the method for manufacturing the through electrode of the same substrate.
【図５】従来の基板の貫通電極を示す要部断面図であ
る。FIG. 5 is a cross-sectional view of an essential part showing a through electrode of a conventional substrate.
１０ 基板 １１ 貫通電極 １２ 導電性被膜 １３ 絶縁体 ３０ 貫通孔 10 Substrate 11 Through Electrode 12 Conductive Film 13 Insulator 30 Through Hole
Claims (1)
し、この貫通孔内に上記基板の表裏間を導通接続する貫
通電極を設けてなる基板であって、上記貫通孔の内面に
導電性被膜を形成し、かつ貫通孔内に絶縁体を充填して
なる基板の貫通電極。1. A substrate comprising a through hole penetrating the substrate in a front-back direction, and a through electrode provided in the through hole for electrically connecting between the front and back sides of the substrate, wherein the inner surface of the through hole is electrically conductive. Electrode of a substrate formed by forming a conductive coating and filling an insulating material in the through hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1241792U JPH0567026U (en) | 1992-02-06 | 1992-02-06 | Through electrode of substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1241792U JPH0567026U (en) | 1992-02-06 | 1992-02-06 | Through electrode of substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0567026U true JPH0567026U (en) | 1993-09-03 |
Family
ID=11804695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1241792U Withdrawn JPH0567026U (en) | 1992-02-06 | 1992-02-06 | Through electrode of substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0567026U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005003477A (en) * | 2003-06-11 | 2005-01-06 | Matsushita Electric Ind Co Ltd | Magnetic sensor |
| US9894763B2 (en) | 2014-02-26 | 2018-02-13 | Ngk Insulators, Ltd. | Insulating substrates including through holes |
-
1992
- 1992-02-06 JP JP1241792U patent/JPH0567026U/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005003477A (en) * | 2003-06-11 | 2005-01-06 | Matsushita Electric Ind Co Ltd | Magnetic sensor |
| US9894763B2 (en) | 2014-02-26 | 2018-02-13 | Ngk Insulators, Ltd. | Insulating substrates including through holes |
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