JPH0566698B2 - - Google Patents
Info
- Publication number
- JPH0566698B2 JPH0566698B2 JP7730585A JP7730585A JPH0566698B2 JP H0566698 B2 JPH0566698 B2 JP H0566698B2 JP 7730585 A JP7730585 A JP 7730585A JP 7730585 A JP7730585 A JP 7730585A JP H0566698 B2 JPH0566698 B2 JP H0566698B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- tip
- ion source
- reservoir
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000002500 ions Chemical class 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 229910052580 B4C Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000284 extract Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000010884 ion-beam technique Methods 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 229910052790 beryllium Inorganic materials 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910021397 glassy carbon Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000007750 plasma spraying Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002296 pyrolytic carbon Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
Description
（産業上の利用分野）
本発明は、高輝度で、かつ点状のイオンビーム
が得られる液体金属イオン源構造体に関する。
液体金属を用いたイオンビームは、従来の電子
ビーム露光がサブミクロンの微細加工が限界であ
るのに対して、ナノメーターの微細加工が可能で
あるため、これらはマスクレスイオン注入、シー
リング、Ｘ線マスクの修正用等の用途に使用でき
る可能性が大であるので注目されている。
これらの分野のうち、イオン注入用には、Ｂ、
As、Ｐ、Si、Beなど多種類のイオン源が必要で
ある。従来のGa金属イオン源は、タングステン
線の先端を電解研磨により尖がらせたエミツター
が使用されている。この場合、Gaの融点が30℃
と低いので、100〜200℃のイオンビームを発生で
きる。従つて、タングステンエミツターとGaの
反応も起らず、長期間安定に使用できる。
一方、前記した各種のイオン源を含んだ金属の
場合、融点も高く、反応性が激しいので、タング
ステンエミツターを使用すると、極端な場合数秒
で反応が起り、安定したイオンビームが得られな
い。特に、Ｂを含んだ合金の場合に、この現象が
顕著である。この他、エミツターに要求される性
能としては、(l)液体金属との濡れが良いこと、(2)
密度が高く、先端部に気泡や欠陥を含まないこと
と、(3)機械的強度が大で、熱的電気的衝撃で先端
がかけないこと、(4)電気抵抗が小さいこと、(5)リ
ザーバー及びヒーターとの反応がないことなどで
ある。
エミツターの材質としては、従来のタングステ
ンの他に、Ti、Zr、Hf、Ｖ、Nb、Taの炭化物、
窒化物、二硼化物、原子番号57から70までの希土
類元素の六硼化物または炭素（特開昭57−132632
号公報、以下公知例１と云う）や、シリコンカー
バイト（SiC）（特開昭59−31542号公報、以下公
知例２と云う）や、BNとTiB2の複合物（特開昭
60−1717号公報、以下公知例３と云う）等が提案
されている。
公知例１には、H2、He、Ar、O2のガス及び
Ga、In、Bi、Au、Pbと、前記した炭化物、窒化
物、硼化物との相互作用が少なく、かつ金属との
濡れが良いこと、
公知例２には、ＢまたはAlなど反応性の大き
い元素を含む合金用に、グラツシーカーボンより
も濡れが良く、耐食性も優れているエミツター材
料として、SiCが良いこと、
公知例３には、Al金属に適したエミツター材
料として、TiB2、CrB2の硼化物、TiCの炭化物、
TiB2−BNの複合物が検討され、特にTiB2−BN
系がAlとの濡れ及び耐食性の点で優れているこ
とが示されている。
しかし、これらの公知例の技術では、合金組成
に合つたエミツター材料を選択しなければならな
い。さらに、後記する様に、従来のエミツター材
料には欠点が多く、改良すべき点が多い。
すなわち、SiCは比抵抗が200Ωcmと大きいの
で、エミツター材料には不適当である。また、
Ti、Zr、Hf、Ｖ、Nb、Ta等の周期律率第ａ
族元素及び第Va族元素の硼化物、炭化物、窒化
物は、いずれも融点が3000℃近くあり、フローテ
イングゾーン法での良質な単結晶化が難しい。ま
たホツトプレス法でも気孔率10％以下の成型体を
作ることは困難である。従つて、これらの単結晶
や焼結体を加工して作つたエミツターは、歩留り
良く先端の曲率半径を１−2μｍに加工すること
が著しく困難である。また、LaB6をはじめとす
るランタンノイドの六硼化物は、電子放射材料と
して、さらにその製法や加工法が知られている
が、Ｂ含有金属、特にNi−Ｂ系の合金と反応し
やすい欠点がある。
（問題点を解決するための手段）
本発明は金属または合金を保持すると共に先端
が針状であるエミツタチツプを具えたリザーバと
ヒーターを介してエミツターチツプに電解をかけ
イオンを引出す電極と接続した液体の金属または
合金のイオン源構造体において、前記エミツター
チツプをボロンカーバイドまたはシリコンボライ
ドもしくはこれらの複合物の成形体からなること
を特徴とするイオン源構造体である。
以下さらに本発明を詳しく説明する。
本発明で言う液体金属とは、Ga、In、Bi、Al、
Pb、等の低融点の単一金属をはじめとして、Au
−Si−Be、Pt−As、Ni−Pd−Ｂ等の低融点合金
であり、Be、Si、Ｂ、As、Ｐ等を含むものをい
う。
エミツター材質は、ボロンカーバイドまたはシ
リコンボライドもしくはこれらの複合物からなる
ものである。しかしボロンカーバイドはB4Cの化
学式で示す定比化合物ばかりでなく、不定比化合
物であつても良い。またシリコンボライドは、
SiB4とSiB6のいずれのものであつてもよく、さ
らに前記と同様に定比、不定比を問わない。ま
た、これらを任意の割合で混合した複合物でも良
い。なおSiB4は融点が127℃であるから、低融点
合金に適する。これらは、いづれも電気抵抗が
1Ωcm以下である。
エミツターチツプは、50Kg／cm2以上の加圧下
で、1200〜2100℃以下の温度範囲でホツトプレス
成型した焼結体、またはフラツクス法やフローテ
イングゾーン法等で作成した単結晶を切断し、先
端を機械研磨又は電解研磨で、先端曲率半径が１
−2μｍ以下になる様に加工する。
また、あらかじめ先端曲率半径１−2μｍに研
磨したＷ、Ta、Mo等の高融点金属成形体に、前
記したボロンカーバイトまたはシリコンボライド
もしくはこれらの複合物を、CVD法、プラズマ
溶射法等で薄く被覆しても良い。
リザーバは、Ta等の加工しやすい高融点金属
を用いて、必要により、表面にCVD法又はプラ
ズマ溶射法等でTi、Zr、Hf、Ｖ、NbTa等の炭
化物又は硼化物を被覆する。リザーバの形状は、
実質的に溶融金属を保持すると共にエミツターに
該溶融金属を安定に供給できる構造であれば良
い。
ヒーターは、Ｗ、Ta、等の高融点金属線をリ
ザーバ又はエミツタの一部にスポツト溶接等で接
合する。又、グラツシーカーボンもしくは熱分解
カーボン等の炭素質ヒータを、リザーバ又はエミ
ツターの一部に接合しても良い。以上説明した方
法により第１図に示されるイオン源構造体が得ら
れる。
（発明の実施例）
実施例 １
第１表に示す成分組成及びホツトプレス条件
で、焼結体を製造した。各々の相対密度は、90％
以上であつた。これを、0.5×0.5×３mmに切断し
た。次いでこれを先端の円錐角30°先端曲率半径
2μｍに機械研磨し、エミツタチツプを作成した。
これを第２図に示す幅0.7mm、流さ６mm、厚さ0.1
mmのTa板３の中央部に該チツプ底部４を電子ビ
ーム溶接した後、そのTa板３を第３図に示すよ
うに折り曲げてリザーバ５を作成した。さらに、
リザーバ５の底部に経0.18mmのＷ線７をスポツト
溶接して、第１図に示す様な液体金属イオン源を
作成した。
また１×10-6Torrの真空下で、BNルツボ中
に、Alを溶かし、エミツタを加熱しながら該溶
融Alに浸し、エミツタとリザーバとの間に10mg
を溜めた。この様にして作成した液体金属イオン
源のエミツタチツプを温度700℃にして、イオン
ビームの取出しを行つたところ、引出し電圧kv
で100μAのイオンビームが、300時間安定であつ
た。
実施例 ２
実施例１で作成した各エミツタチツプにおい
て、Ni、Pd、Ｂ、Beの合金（30、60、８、２）
を10mg溜めた液体金属イオン源を作成した。エミ
ツタの温度850℃の時、引出し電圧5kvで100μA
を1000時間安定であつた。
実施例 ３
実施例１で作成した各エミツタチツプにおい
て、Pt、Asの合金（70、30）を10mg溜めた液体
金属イオン源を作成した。エミツタの温度800℃
の時、引出し電圧7kvで、50μAのイオンビーム
を200時間安定であつた。
(Industrial Application Field) The present invention relates to a liquid metal ion source structure capable of producing a high-intensity, point-shaped ion beam. Ion beams using liquid metals are capable of nanometer microfabrication, whereas conventional electron beam exposure is limited to submicron microfabrication. It is attracting attention because it has great potential to be used for applications such as line mask correction. Among these fields, for ion implantation, B,
Many types of ion sources such as As, P, Si, and Be are required. Conventional Ga metal ion sources use emitters made by sharpening the tips of tungsten wires by electrolytic polishing. In this case, the melting point of Ga is 30℃
Because the temperature is so low, it is possible to generate an ion beam at a temperature of 100 to 200 degrees Celsius. Therefore, no reaction occurs between the tungsten emitter and Ga, and it can be used stably for a long period of time. On the other hand, metals containing the various ion sources described above have high melting points and are highly reactive, so if a tungsten emitter is used, in extreme cases a reaction will occur within a few seconds, making it impossible to obtain a stable ion beam. This phenomenon is particularly noticeable in the case of alloys containing B. Other performance requirements for emitters include (l) good wettability with liquid metal; (2)
High density, no bubbles or defects in the tip, (3) high mechanical strength, so the tip will not be damaged by thermal or electrical shock, (4) low electrical resistance, (5) There is no reaction with the reservoir or heater. In addition to conventional tungsten, the material of the emitter is Ti, Zr, Hf, V, Nb, Ta carbide,
Nitride, diboride, hexaboride of rare earth elements with atomic numbers from 57 to 70 or carbon (JP-A-57-132632
Publication No. 59-31542 (hereinafter referred to as Publication Example 1), silicon carbide (SiC) (Japanese Unexamined Patent Publication No. 59-31542, hereinafter referred to as Publication Example 2), and a composite of BN and TiB 2 (Japanese Patent Application Laid-Open No.
60-1717 (hereinafter referred to as known example 3), etc. have been proposed. Known example 1 includes gases such as H 2 , He, Ar, O 2 and
There is little interaction between Ga, In, Bi, Au, and Pb and the above-mentioned carbides, nitrides, and borides, and there is good wettability with metals. SiC is a good emitter material for alloys containing elements, as it has better wettability and corrosion resistance than glassy carbon. Known Example 3 describes TiB 2 and CrB 2 as emitter materials suitable for Al metals. boride, TiC carbide,
Composites of TiB 2 −BN have been investigated, especially TiB 2 −BN
It has been shown that the system is excellent in terms of wetting with Al and corrosion resistance. However, in these known techniques, it is necessary to select an emitter material that matches the alloy composition. Furthermore, as will be described later, conventional emitter materials have many drawbacks and there are many points to be improved. In other words, SiC has a high specific resistance of 200 Ωcm, so it is not suitable as an emitter material. Also,
Periodic ratio a of Ti, Zr, Hf, V, Nb, Ta, etc.
Borides, carbides, and nitrides of group elements and group Va elements all have melting points of nearly 3000°C, making it difficult to form high-quality single crystals using the floating zone method. Furthermore, even with the hot press method, it is difficult to produce a molded body with a porosity of 10% or less. Therefore, it is extremely difficult to process emitters made by processing these single crystals or sintered bodies to a radius of curvature of 1 to 2 μm at the tip with a good yield. In addition, lanthanoid hexaborides such as LaB 6 are known as electron emitting materials, and their manufacturing and processing methods are known, but they have the disadvantage of easily reacting with B-containing metals, especially Ni-B alloys. There is. (Means for Solving the Problems) The present invention consists of a reservoir that holds a metal or an alloy and is equipped with an emitter tip with a needle-like tip, and a liquid that is connected to an electrode that applies electrolysis to the emitter tip via a heater and extracts ions. An ion source structure made of metal or alloy, characterized in that the emitter chip is made of a molded body of boron carbide, silicon boride, or a composite thereof. The present invention will be further explained in detail below. The liquid metals referred to in the present invention include Ga, In, Bi, Al,
In addition to low melting point single metals such as Pb, Au
- A low melting point alloy such as Si-Be, Pt-As, Ni-Pd-B, etc., which includes Be, Si, B, As, P, etc. The emitter material is made of boron carbide, silicon boride, or a composite thereof. However, boron carbide is not limited to the stoichiometric compound represented by the chemical formula B 4 C, but may also be a non-stoichiometric compound. Also, silicon boride is
It may be either SiB 4 or SiB 6 , and as mentioned above, it does not matter whether it is stoichiometric or non-stoichiometric. Alternatively, a composite obtained by mixing these in an arbitrary ratio may be used. Note that SiB 4 has a melting point of 127°C, so it is suitable as a low melting point alloy. All of these have electrical resistance.
It is less than 1Ωcm. Emitter chips are made by cutting a sintered body hot press-molded at a temperature range of 1200 to 2100°C or less under pressure of 50 kg/cm 2 or more, or a single crystal made by the flux method or floating zone method, and then mechanically cutting the tip. By polishing or electrolytic polishing, the tip curvature radius is 1
-Process so that it is less than 2μm. In addition, the above-mentioned boron carbide, silicon boride, or a composite thereof is applied to a molded body of a high-melting metal such as W, Ta, or Mo that has been polished to a radius of curvature of 1 to 2 μm at the tip using a CVD method, plasma spraying method, etc. It may be coated thinly. The reservoir is made of a high melting point metal such as Ta that is easy to process, and if necessary, the surface is coated with carbide or boride such as Ti, Zr, Hf, V, NbTa, etc. by CVD or plasma spraying. The shape of the reservoir is
Any structure may be used as long as it can substantially hold the molten metal and stably supply the molten metal to the emitter. The heater is made by joining a high melting point metal wire such as W or Ta to a part of the reservoir or emitter by spot welding or the like. Furthermore, a carbonaceous heater such as glassy carbon or pyrolytic carbon may be joined to a portion of the reservoir or emitter. By the method described above, the ion source structure shown in FIG. 1 can be obtained. (Examples of the Invention) Example 1 A sintered body was manufactured using the component composition and hot pressing conditions shown in Table 1. The relative density of each is 90%
That's all. This was cut into 0.5 x 0.5 x 3 mm. Next, change this to the tip cone angle of 30° and the tip curvature radius.
It was mechanically polished to 2 μm to create an emitter chip.
This is shown in Figure 2 with a width of 0.7 mm, a flow of 6 mm, and a thickness of 0.1 mm.
The bottom part 4 of the chip was electron beam welded to the center of a Ta plate 3 having a diameter of 1 mm, and then the Ta plate 3 was bent as shown in FIG. 3 to form a reservoir 5. moreover,
A W wire 7 with a diameter of 0.18 mm was spot welded to the bottom of the reservoir 5 to create a liquid metal ion source as shown in FIG. Also, under a vacuum of 1 × 10 -6 Torr, Al was melted in a BN crucible, and the emitter was immersed in the molten Al while heating, and 10mg of aluminum was placed between the emitter and the reservoir.
I accumulated. When the emitter chip of the liquid metal ion source prepared in this way was heated to a temperature of 700℃ and the ion beam was extracted, the extraction voltage kv
The 100 μA ion beam was stable for 300 hours. Example 2 In each emitter chip created in Example 1, alloys of Ni, Pd, B, and Be (30, 60, 8, 2) were used.
A liquid metal ion source containing 10 mg of ion was created. When the temperature of the emitter is 850℃, the extraction voltage is 100μA at 5kV.
was stable for 1000 hours. Example 3 In each emitter chip prepared in Example 1, a liquid metal ion source was prepared in which 10 mg of an alloy of Pt and As (70, 30) was stored. Emitsuta temperature 800℃
At that time, the ion beam of 50μA was stable for 200 hours at an extraction voltage of 7kV.
【表】
（発明の効果）
本発明の液体イオン源構造体は、ボロンカーバ
イド及びシリコンボライドもしくはこれらの複合
物からなるエミツタチツプを用いた液体金属イオ
ン源であるので、各種の液体金属に対して濡れが
よく、反応しにくいものであるので長時間安定に
使用できる。[Table] (Effects of the Invention) The liquid ion source structure of the present invention is a liquid metal ion source using an emitter tip made of boron carbide, silicon boride, or a composite thereof, so it is suitable for various liquid metals. It wets well and does not react easily, so it can be used stably for a long time.
図面は本発明の実施例を示すもので、第１図は
イオン源構造体の説明図、第２図及び第３図はそ
の製造工程の説明図である。
付号、１……エミツ−チツプ、２……チツプ先
端、３……Ta板、４……チツプ底部、５……リ
ザーバ、６……電極、７……ヒーター、８……溶
融金属、９……絶縁碍子。
The drawings show an embodiment of the present invention, and FIG. 1 is an explanatory diagram of an ion source structure, and FIGS. 2 and 3 are explanatory diagrams of its manufacturing process. Number, 1... Emitchip, 2... Chip tip, 3... Ta plate, 4... Chip bottom, 5... Reservoir, 6... Electrode, 7... Heater, 8... Molten metal, 9 ...Insulator.
Claims (1)
であるエミツタチツプを具えたリザーバとヒータ
ーを介してエミツタチツプに電界をかけイオンを
引出す電極と接続した液体の金属または合金のイ
オン源構造体において、前記エミツタチツプをボ
ロンカーバイドまたはシリコンボライドもしくは
これらの複合物の成形体からなることを特徴とす
るイオン源構造体。1 In a liquid metal or alloy ion source structure connected to a reservoir equipped with an emitter tip that holds a metal or alloy and has a needle-like tip, and an electrode that applies an electric field to the emitter tip via a heater and extracts ions, the emitter tip An ion source structure comprising a molded body of boron carbide, silicon boride, or a composite thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7730585A JPS61237327A (en) | 1985-04-11 | 1985-04-11 | Ion source structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7730585A JPS61237327A (en) | 1985-04-11 | 1985-04-11 | Ion source structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61237327A JPS61237327A (en) | 1986-10-22 |
| JPH0566698B2 true JPH0566698B2 (en) | 1993-09-22 |
Family
ID=13630197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7730585A Granted JPS61237327A (en) | 1985-04-11 | 1985-04-11 | Ion source structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61237327A (en) |
-
1985
- 1985-04-11 JP JP7730585A patent/JPS61237327A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61237327A (en) | 1986-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4721878A (en) | Charged particle emission source structure | |
| EP1035231B1 (en) | Electrode rod for spark deposition, process for the production thereof, and process for covering with superabrasive-containing layer | |
| WO1987003739A1 (en) | Liquid metal ion source | |
| US4752713A (en) | Thermionic cathode of high emissive power for an electric tube, and process for its manufacture | |
| KR20190030703A (en) | Electron source and manufacturing method thereof | |
| GB2099625A (en) | Thermionic emission cathode | |
| JPH0566698B2 (en) | ||
| JPH0752623B2 (en) | Liquid boron-containing alloy ion source structure | |
| JPH026184B2 (en) | ||
| US4624833A (en) | Liquid metal ion source and apparatus | |
| JPS6386332A (en) | Resistance heating type single crystal | |
| US4629931A (en) | Liquid metal ion source | |
| JP5047062B2 (en) | Thermionic emission cathode | |
| JPH0676730A (en) | Thermonic emission cathode | |
| US3515574A (en) | Method for metallizing a boron nitride containing body | |
| JP2517678B2 (en) | Liquid metal ion source | |
| JPS63221541A (en) | Liquid metal ion source | |
| WO2023189842A1 (en) | Emitter and device comprising same | |
| US5124528A (en) | Gas tungsten and plasma arc welding electrode having a carbide emitter end | |
| JP2510719B2 (en) | Liquid metal ion source structure | |
| JPH0460946B2 (en) | ||
| JPS6276242A (en) | Ion source | |
| JPH0421976B2 (en) | ||
| JPS62234834A (en) | Liquid-metal ion source | |
| JPS5911172B2 (en) | thermionic emission cathode |