JPH0565109B2 - - Google Patents
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- Publication number
- JPH0565109B2 JPH0565109B2 JP30968487A JP30968487A JPH0565109B2 JP H0565109 B2 JPH0565109 B2 JP H0565109B2 JP 30968487 A JP30968487 A JP 30968487A JP 30968487 A JP30968487 A JP 30968487A JP H0565109 B2 JPH0565109 B2 JP H0565109B2
- Authority
- JP
- Japan
- Prior art keywords
- movable electrode
- electrode
- cantilever
- plate
- fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001133 acceleration Effects 0.000 claims description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- 239000011521 glass Substances 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 14
- 230000005484 gravity Effects 0.000 claims description 8
- 238000001514 detection method Methods 0.000 description 39
- 238000000605 extraction Methods 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 16
- 238000006073 displacement reaction Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000004945 silicone rubber Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は加速度センサに係り、特に自動車の車
体制御システムに好適な加速度センサに関するも
のである。なお、加速度センサとしては０〜±
1G、０〜10Hzの範囲を高精度に検出できるもの
が要求される。ここで、1G＝9.8ｍ／S2である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an acceleration sensor, and particularly to an acceleration sensor suitable for a vehicle body control system. In addition, as an acceleration sensor, 0 to ±
A device that can detect 1G with high accuracy in the 0-10Hz range is required. Here, 1G=9.8m/ S2 .
加速度センサとしては圧電材料の圧電効果を利
用した圧電式、ピエゾ抵抗効果を利用した歪ゲー
ジ式、力のフイードバツク機構を有するサーボ
式、差動トランスを利用した磁気式、フオトイン
タラプタを利用した光式、シリコンの微細加工技
術を利用した容量式など数多くの方式が知られて
いる。これらの加速度センサに関しては、例え
ば、シリコン・ダイヤフラム・キヤパシテイブ・
センサ・フオア・プレツシヤ・フロー・アクセレ
ーシヨン・アンド・アチチユード・メジヤーメン
ト（Transducers'87、The 4th International
Conference on Solid−State Sensors and
Actuators、1987年６月）に記載の技術が公知で
ある。
Acceleration sensors include a piezoelectric type that uses the piezoelectric effect of piezoelectric materials, a strain gauge type that uses the piezoresistive effect, a servo type that has a force feedback mechanism, a magnetic type that uses a differential transformer, and an optical type that uses a photointerrupter. Many methods are known, including a capacitive method using silicon microfabrication technology. Regarding these acceleration sensors, for example, silicon diaphragm capacitive
Sensors for Pressure Flow Acceleration and Attitude Measurement (Transducers'87, The 4th International
Conference on Solid−State Sensors and
Actuators, June 1987) is known.
上記各種の加速度センサの内、圧電式は構造簡
単であるが低周波成分の加速度を検出できない。
歪ゲージ式は小型、高精度であるが耐衝撃性に劣
る。サーボ式は高精度であるが構造複雑、高価格
である。磁気式は大型で構造複雑であり、光式は
測定分解能が低い。また、シリコンの微細加工技
術を利用した容量式は低感度で分解能が低く、他
軸方向の加速度成分に影響される。このように、
従来技術の加速度センサは車体制御システムへの
適用を考えると、上記の如く欠点を有する。
Among the various acceleration sensors mentioned above, the piezoelectric type has a simple structure, but cannot detect acceleration of low frequency components.
Strain gauge types are small and highly accurate, but have poor impact resistance. The servo type has high precision, but has a complicated structure and is expensive. The magnetic type is large and has a complicated structure, and the optical type has low measurement resolution. Furthermore, the capacitive type using silicon microfabrication technology has low sensitivity and resolution, and is affected by acceleration components in other axis directions. in this way,
The acceleration sensors of the prior art have drawbacks as described above when considering application to vehicle body control systems.
本発明の目的は構造が簡単（低価格）で耐衝撃
性に優れ、高感度で高精度な加速度センサを提供
することにある。 An object of the present invention is to provide an acceleration sensor that has a simple structure (low cost), excellent impact resistance, high sensitivity, and high accuracy.
上記目的は、シリコンの微細加工技術を利用し
た容量式加速度センサにおいて検出部の構造を工
夫することにより、達成される。即ち、シリコン
板を両面からエツチングしてカンチレバーの先端
に重りの役目をなす可動電極を形成した後、固定
電極を表面に形成したガラス板をシリコン板の両
面に接着し、可動電極と固定電極間の容量変化か
ら加速度を検出する構造とすることにより、従来
技術の欠点を解消することができる。
The above object is achieved by devising the structure of the detection section in a capacitive acceleration sensor that utilizes silicon microfabrication technology. That is, after etching a silicon plate from both sides to form a movable electrode that acts as a weight at the tip of the cantilever, glass plates with fixed electrodes formed on the surface are adhered to both sides of the silicon plate, and the gap between the movable electrode and the fixed electrode is By adopting a structure in which acceleration is detected from a change in capacitance, the drawbacks of the prior art can be overcome.
上記のカンチレバーを２個設けて同心に配列す
ると両持ち梁を形成することになる。このように
構成しても同様の作用、効果が得られる。 If two of the above cantilevers are provided and arranged concentrically, a double-supported beam will be formed. Even with this configuration, similar actions and effects can be obtained.
シリコンカンチレバーの先端に可動電極を形成
し、可動電極と固定電極間のギヤツプが数μｍに
なるように実装することにより可動電極の小さな
変位で、０〜±1G程度の加速度を高感度に測定
することができる。このとき、シリコンカンチレ
バーを数十μｍと厚くしても、加速度に対する電
極間の容量変化を大きくとれる故、耐衝撃性を損
うことなく高感度化を達成することができる。カ
ンチレバーの中心軸上に可動電極の重心を位置せ
しめると、可動電極の変位方向以外の加速度成分
に対して、該カンチレバーは曲げモーメントを受
けない。それ故、可動電極に直交する加速度成分
のみを検出することができる。 By forming a movable electrode at the tip of a silicon cantilever and mounting it so that the gap between the movable electrode and the fixed electrode is several μm, accelerations of about 0 to ±1G can be measured with high sensitivity with small displacements of the movable electrode. be able to. At this time, even if the silicon cantilever is made as thick as several tens of micrometers, the capacitance change between the electrodes with respect to acceleration can be large, so high sensitivity can be achieved without impairing impact resistance. When the center of gravity of the movable electrode is located on the central axis of the cantilever, the cantilever does not receive a bending moment with respect to acceleration components other than the direction of displacement of the movable electrode. Therefore, only the acceleration component perpendicular to the movable electrode can be detected.
シリコン板を両面からエツチングしてカンチレ
バーと可動電極を形成するとき、半導体歪ゲージ
式の加速度センサのような拡散低抗体や電極がな
い故、両面エツチングの時の特別なパツシベーシ
ヨンは不要であり、製作時の歩留りが向上し低コ
スト化を図れる。シリコンカンチレバーを数十μ
ｍと厚くできる故、カンチレバーと可動電極から
なる変位部分の共振点は1kHzのオーダになる。
この値は、測定範囲の０〜10Hzに対して十分大き
く、変位部分にシリコンオイルなどを封入して、
特にこれをダンピングさせなくても、耐衝撃性と
検出時の高精度化を図ることができる。このぶ
ん、検出部の構造と製法が簡単になり、低コスト
になる。カンチレバーと可動電極を有するシリコ
ン板は、これと熱膨張係数のほぼ等しい２枚のガ
ラス板の間に接着される。それ故、接着部の熱歪
は小さく、使用状態での温度変化（−40〜＋100
℃）に対して、可動電極の温度に対する変位は極
めて小さくなる。それ故加速度センサの温度特性
は良好で、高精度な加速度センサを実現できる。
なお、検出部はシリコンカンチレバーに対して対
称積層体の構造になつている。それ故、接着部の
熱歪は上部ガラス板部と下部ガラス板部で等し
く、温度変化に対して可動電極を上下に変位させ
る要因は相殺し、その変位をさらに小さくするこ
とができる。このように、検出部の対称積層体構
造も温度特性の向上に大きく寄与する。 When etching a silicon plate from both sides to form the cantilever and movable electrode, there is no need for a special passivation when etching both sides, as there is no diffusion barrier or electrodes like in a semiconductor strain gauge type acceleration sensor. The time yield can be improved and costs can be reduced. silicon cantilever several tens of microns
Since it can be made as thick as m, the resonance point of the displacement part consisting of the cantilever and the movable electrode will be on the order of 1 kHz.
This value is sufficiently large for the measurement range of 0 to 10 Hz, and by filling the displacement part with silicone oil, etc.
In particular, even if this is not damped, impact resistance and high accuracy during detection can be achieved. This simplifies the structure and manufacturing method of the detection section, resulting in lower costs. A silicon plate with a cantilever and a movable electrode is bonded between it and two glass plates having approximately the same coefficient of thermal expansion. Therefore, the thermal distortion of the bonded part is small, and the temperature change during use (-40 to +100
℃), the displacement of the movable electrode with respect to temperature becomes extremely small. Therefore, the temperature characteristics of the acceleration sensor are good, and a highly accurate acceleration sensor can be realized.
Note that the detection section has a symmetrical stacked structure with respect to the silicon cantilever. Therefore, the thermal strain of the adhesive portion is equal in the upper glass plate portion and the lower glass plate portion, and the factors that cause the movable electrode to move up and down in response to temperature changes can be canceled out and the displacement can be further reduced. In this way, the symmetrical stacked structure of the detection section also greatly contributes to improving the temperature characteristics.
以下、本発明の一実施例を第１図により説明す
る。本実施例に係る加速度センサの検出部は、シ
リコン板１を両面から異方性エツチングして、カ
ンチレバー２とその先端に重錘の役目をなす可動
電極３を形成した後、固定電極４と同５とを蒸着
その他の方法で形成したガラス板６と同７とをシ
リコン板１の両面に接着したものよりなる。可動
電極３は溝状の貫通溝８によつてシリコン板１か
ら分離されている故、それに垂直な加速度成分
（図中の矢印Ｙ方向）に応じて上下に変位できる
ようになつている。なお、９は可動電極３の引出
し電極であり、これを介して外部の電子回路と接
続される。 An embodiment of the present invention will be described below with reference to FIG. The detection part of the acceleration sensor according to this embodiment is constructed by anisotropically etching a silicon plate 1 from both sides to form a cantilever 2 and a movable electrode 3 serving as a weight at its tip. A glass plate 6 and a glass plate 7 formed by vapor deposition or other methods are bonded to both sides of a silicon plate 1. Since the movable electrode 3 is separated from the silicon plate 1 by the groove-shaped through groove 8, it can be displaced up and down in response to an acceleration component perpendicular thereto (in the direction of the arrow Y in the figure). Note that 9 is an extraction electrode of the movable electrode 3, and is connected to an external electronic circuit via this.
加速度Ｇに応じて可動電極３が上下に変位する
と、可動電極３と固定電極４と同５との間の静電
容量（キヤパシタンス）が変化する。本発明によ
るセンサは、この容量変化から加速度を検出する
ものである。車体制御用の加速度センサとして
は、特定の加速度成分（図においてはＹ方向）を
高精度に検出する必要があり、他軸方向の加速度
成分（図においてはＹ軸に垂直なＸ方向）に感じ
てはならない。シリコンカンチレバー２の長手方
向の中心軸上に重錘の機能を有する可動電極３の
重心が位置するように、シリコン板１を両面から
エツチングする。このように構成すると、Ｘ軸方
向の加速度を受けた場合、可動電極３を上下（Ｙ
軸方向）に変位させる曲げモーメントはカンチレ
バー２に作用しない。この結果、本発明による加
速度センサはＸ軸方向の加速度成分には不感で、
Ｙ軸方向の加速度成分のみを正確に検出すること
ができる。 When the movable electrode 3 is displaced up and down according to the acceleration G, the capacitance between the movable electrode 3 and the fixed electrodes 4 and 5 changes. The sensor according to the present invention detects acceleration from this capacitance change. As an acceleration sensor for vehicle body control, it is necessary to detect a specific acceleration component (in the Y direction in the figure) with high precision, and it is necessary to detect acceleration components in other axis directions (in the X direction perpendicular to the Y axis in the figure). must not. The silicon plate 1 is etched from both sides so that the center of gravity of the movable electrode 3 having a weight function is located on the central axis of the silicon cantilever 2 in the longitudinal direction. With this configuration, when receiving acceleration in the X-axis direction, the movable electrode 3 is moved up and down (Y
The bending moment that causes the cantilever to be displaced in the axial direction does not act on the cantilever 2. As a result, the acceleration sensor according to the present invention is insensitive to the acceleration component in the X-axis direction,
Only the acceleration component in the Y-axis direction can be accurately detected.
加速度以外の要因（例えば、周囲温度の変化な
ど）によつて、可動電極３と固定電極４，５間の
ギヤツプが変化すると検出誤差を発生することに
なる。加速度センサは車体に装着後、−40〜＋100
℃の広い温度範囲内で使用されるので、温度影響
の少ないことが要求される。周囲温度の変化に対
して、シリコン板１とガラス板６，７との接着部
の熱歪の温度影響が大きな問題となるので、この
部分の熱歪を極力小さくしなければならない。固
定電極４，５を表面に蒸着その他の方法で形成し
たガラス板６，７の材質をホウケイ酸系のガラス
とし、その熱膨張係数がシリコン板１と等しいも
のを選定する。シリコン板１とガラス板４，５と
を良く知られた陽極接合法（300℃以上の高温で、
高電圧を印加して接合する方法）によつて接着す
ることにより、接着部の熱歪を極力、小さくでき
る。図により明らかなように、シリコン板１、カ
ンチレバー２、可動電極３よりなる検出部の構造
は上下に対称な積層体になつている。ガラス板６
と同７との接着部の熱歪が可動電極３を上下に変
位させる要因は、対称積層体のため互いに相殺さ
れる。このように本実施例は、検出部の構造自体
も、加速度センサの温度特性を向上させるように
なつている。 If the gap between the movable electrode 3 and the fixed electrodes 4 and 5 changes due to factors other than acceleration (for example, changes in ambient temperature), a detection error will occur. -40 to +100 after installing the acceleration sensor on the vehicle body
Since it is used within a wide temperature range of °C, it is required to have little temperature influence. Since the temperature effect of thermal strain on the bonded portion between the silicon plate 1 and the glass plates 6 and 7 becomes a big problem due to changes in ambient temperature, the thermal strain in this portion must be minimized as much as possible. The glass plates 6 and 7 on which the fixed electrodes 4 and 5 are formed by vapor deposition or other methods are made of borosilicate glass whose thermal expansion coefficient is equal to that of the silicon plate 1. The silicon plate 1 and the glass plates 4 and 5 are bonded together by the well-known anodic bonding method (at a high temperature of 300°C or higher,
By bonding using a method of bonding by applying a high voltage, thermal distortion of the bonded portion can be minimized as much as possible. As is clear from the figure, the structure of the detection section consisting of the silicon plate 1, the cantilever 2, and the movable electrode 3 is a stacked body that is vertically symmetrical. glass plate 6
The factors that cause the movable electrode 3 to be vertically displaced due to thermal strain at the bonded portion between the electrode 3 and the electrode 7 cancel each other out because of the symmetrical stacked structure. In this way, in this embodiment, the structure of the detection section itself is designed to improve the temperature characteristics of the acceleration sensor.
容量式加速度センサの基本原理を第２図に示
す。可動電極３と固定電極４との間の静電容量
C1及び可動電極３と固定電極５との間の静電容
量C2は電極取出用リード１０，１１，１２を介
して電子回路（図示せず）に接続されて検出され
る。可動電極３と固定電極４と間の初期ギヤツプ
doは数μｍに作られる。今、可動電極３が加速
度による力を受けて、固定電極５の方へｗだけ変
位すると、容量C1は減少し、容量C2は増加する。
この容量の差分値ΔC（ΔC＝C2−C1）から、車体
に作用する加速度Ｇを検出するものである。 Figure 2 shows the basic principle of a capacitive acceleration sensor. Capacitance between movable electrode 3 and fixed electrode 4
C 1 and the capacitance C 2 between the movable electrode 3 and the fixed electrode 5 are connected to an electronic circuit (not shown) via electrode lead leads 10, 11, and 12 and detected. Initial gap between movable electrode 3 and fixed electrode 4
do is made several micrometers. Now, when the movable electrode 3 receives a force due to acceleration and is displaced by w toward the fixed electrode 5, the capacitance C 1 decreases and the capacitance C 2 increases.
The acceleration G acting on the vehicle body is detected from this capacitance difference value ΔC (ΔC=C 2 −C 1 ).
検出部の展開図を第３図に示す。検出部は上部
ガラス板部、中部シリコン板部、下部ガラス板部
よりなる。ガラス板６には孔１５，１６がサンド
ブラストその他の方法であけられており、片方の
面に固定電極４が、反対の面に引出し電極１３
が、蒸着、スパツタなどの方法で形成される。 A developed view of the detection section is shown in FIG. 3. The detection part consists of an upper glass plate part, a middle silicon plate part, and a lower glass plate part. Holes 15 and 16 are made in the glass plate 6 by sandblasting or other methods, and the fixed electrode 4 is placed on one side and the lead electrode 13 is placed on the opposite side.
is formed by methods such as vapor deposition and sputtering.
固定電極４は引出し電極１３と、孔１５の内面
にメツキによつて形成したメツキ接続リード部分
１４とによつて接続され、リード取り出し電極１
８からワイヤボンデイングによつて外部の容量検
出回路（図示せず）と結線される。 The fixed electrode 4 is connected by a lead-out electrode 13 and a plating connection lead portion 14 formed on the inner surface of the hole 15 by plating, and the lead-out electrode 1
8 to an external capacitance detection circuit (not shown) by wire bonding.
シリコン板１には、カンチレバー２と可動電極
３とがエツチングによつて加工された後、リード
引出し電極１７が蒸着その他の方法で形成され
る。 After the cantilever 2 and the movable electrode 3 are processed by etching on the silicon plate 1, a lead extraction electrode 17 is formed by vapor deposition or other method.
ガラス板７には固定電極５が蒸着、スパツタそ
の他の方法で形成され、リーダ取出し電極１９に
より外部の容量検出回路（図示せず）へ結線され
る。 A fixed electrode 5 is formed on the glass plate 7 by vapor deposition, sputtering or other methods, and is connected to an external capacitance detection circuit (not shown) through a leader extraction electrode 19.
なお、上部ガラス板部、中部シリコン板部及び
下部ガラス板部をウエハ状態で接合した後、各検
出チツプにダイシングする。ダイシング時の切粉
や洗浄水が可動電極３と固定電極４，５との間に
侵入しないように、ダイシング前に孔１５と同１
６とに軟かい接着剤（例えば、シリコンゴムな
ど）を注入する。 Note that after the upper glass plate part, the middle silicon plate part, and the lower glass plate part are bonded in a wafer state, they are diced into each detection chip. In order to prevent chips and cleaning water from entering between the movable electrode 3 and fixed electrodes 4 and 5 during dicing, holes 15 and 15 are made before dicing.
Inject a soft adhesive (for example, silicone rubber) into 6 and 6.
第４図にシリコン板１の詳細を示す。シリコン
板１は（100）ウエハよりなり、良く知られたア
ルカリ溶液中での異方性エツチングによつて両面
から加工される。カンチレバー２と可動電極３と
の周囲には、溝孔状の貫通溝８が形成され、可動
電極３はカンチレバー２の固定端を支点として、
加速度に対し上下に変位できるようになつてい
る。なお、２１は貫通溝８を加工したときに発生
する斜めエチツング部を示している。 FIG. 4 shows details of the silicon plate 1. The silicon plate 1 consists of a (100) wafer and is processed from both sides by well-known anisotropic etching in an alkaline solution. A slot-like through groove 8 is formed around the cantilever 2 and the movable electrode 3, and the movable electrode 3 uses the fixed end of the cantilever 2 as a fulcrum.
It is designed to be able to move up and down in response to acceleration. Note that 21 indicates a diagonally etched portion that occurs when the through groove 8 is processed.
切断代マーク２０、リード取出し通路２２，２
３（２３はシリコン板１の裏面に形成される）は
数μｍの深さにエツチング加工される。リード取
出し通路２２，２３を固定電極４，５の電極引出
し部分が通り、固定電極４，５がシリコン板１と
接触しないようにする。貫通孔２４はガラス板６
に形成した孔１６（第３図参照）から軟かい接着
剤をリード取出し通路部２３へ注入するために設
けられている。２５はリード取出し電極１９から
ワイヤボンデイングによつて、固定電極５を外部
の容量検出回路と結線するために、エツチング加
工されたワイヤボンデイング用のリード取出し空
所である。 Cutting allowance mark 20, lead extraction passage 22, 2
3 (23 is formed on the back surface of the silicon plate 1) is etched to a depth of several μm. The electrode extraction portions of the fixed electrodes 4 and 5 pass through the lead extraction passages 22 and 23, so that the fixed electrodes 4 and 5 do not come into contact with the silicon plate 1. The through hole 24 is inserted into the glass plate 6
It is provided for injecting a soft adhesive into the lead extraction passage 23 through a hole 16 (see FIG. 3) formed in the hole 16 (see FIG. 3). Reference numeral 25 designates a lead extraction space for wire bonding which is etched to connect the fixed electrode 5 to an external capacitance detection circuit from the lead extraction electrode 19 by wire bonding.
−断面を第５図に示す。本図に示すよう
に、シリコン板１を両面からエツチングすること
によつてカンチレバー２と可動電極３とが形成さ
れ、重錘の機能も有する可動電極３の重心がカン
チレバー２の長手方向に中心軸上にくるように、
シリコンウエハ１の厚さ方向に関して対称となる
ように加工する。本例においては、歪ゲージ式加
速度センサにおける如き拡散抵抗を設けていない
ので、前記カンチレバーのエツチング加工に際し
て格別のパツシベーシヨン対策を必要とせず、歩
留り良く製作できる。 - A cross section is shown in FIG. As shown in this figure, a cantilever 2 and a movable electrode 3 are formed by etching a silicon plate 1 from both sides, and the center of gravity of the movable electrode 3, which also functions as a weight, is aligned with the central axis of the cantilever 2 in the longitudinal direction. so that it comes to the top,
The silicon wafer 1 is processed symmetrically in the thickness direction. In this example, since a diffusion resistor as in a strain gauge type acceleration sensor is not provided, no special measures against passivation are required when etching the cantilever, and the cantilever can be manufactured at a high yield.
本発明に係る加速度センサの製造プロセスの一
例を第６図に示す。本実施例における上部ガラス
ウエハ、中部シリコンウエハ及び下部ガラスウエ
ハには、直径３〜４インチ、その厚さがそれぞれ
0.3mm、0.2mm、0.3mmのものを用い、検出部の試作
を行なつた。上部ガラスウエハにサイドブラスト
で孔１５，１６を加工後、１５の内面に導電性の
金属を無電解メツキによつて形成した。このメツ
キ接続リード１４と電気的に接続するように、一
方の面に引出し電極１３、リード取出し電極１
８、他方の面に固定電極４を蒸着によつて形成し
た。 An example of the manufacturing process of the acceleration sensor according to the present invention is shown in FIG. In this example, the upper glass wafer, middle silicon wafer, and lower glass wafer each have a diameter of 3 to 4 inches and a thickness of
We prototyped the detection part using 0.3mm, 0.2mm, and 0.3mm. After forming holes 15 and 16 in the upper glass wafer by side blasting, a conductive metal was formed on the inner surface of the holes 15 by electroless plating. A lead-out electrode 13 is provided on one side so as to be electrically connected to the plated connection lead 14.
8. A fixed electrode 4 was formed on the other surface by vapor deposition.
中部シリコンウエハは熱酸化膜をアルカリエツ
チング時の保護マスクとして、貫通溝８となるス
リツト部、可動電極３、カンチレバー２の順で加
工を行なつた。なお、リード取出し通路２２，２
３は可動電極３と同時に、貫通孔２４とリード取
出し空所２５はスリツト部の貫通溝８と同時に加
工を行なつた。可動電極３、リード取出し通路２
２，２３はシリコン板１の表面から、その深さが
数μｍ（望ましくは２〜3μｍ）になるようにエ
ツチングされる。 Using the thermal oxide film as a protective mask during alkali etching, the central silicon wafer was processed in the following order: the slit portion to become the through groove 8, the movable electrode 3, and the cantilever 2. In addition, the lead extraction passages 22, 2
3 was machined at the same time as the movable electrode 3, and the through hole 24 and lead extraction space 25 were machined at the same time as the through groove 8 of the slit portion. Movable electrode 3, lead extraction passage 2
2 and 23 are etched from the surface of the silicon plate 1 to a depth of several micrometers (preferably 2 to 3 micrometers).
下部ガラスウエハへ、蒸着によつて固定電極５
とリード引出し電極１９とを同時に形成した。な
お、電極材料にはAlあるいはAuなどの金属を用
いた。 A fixed electrode 5 is attached to the lower glass wafer by vapor deposition.
and lead extraction electrodes 19 were formed at the same time. Note that a metal such as Al or Au was used as the electrode material.
上部ガラスウエハ、中部シリコンウエハ及び下
部ガラスウエハを積層後、適当な位置合せ治具で
３枚の位置合せを行う。これらの積層ウエハを
300℃以上の高温度に加熱後、高電圧を印加し、
いわゆる陽極接合法によつて接合した。このと
き、可動電極３は固定電極４と同５との中央にく
るように接着される。ガラス板にほうけい酸系の
ガラス材を用いると、ガラス板とシリコン板との
熱膨張係数はほぼ等しくなり、両者の接合面の熱
歪みは極めて小さくなる。それ故、検出部の周囲
温度が変化しても、接着部の熱歪みを原因として
カンチレバー２の固定端を支点とした可動電極３
の上下動変位は微小である。この結果、周囲温度
の変化に対する可動電極３と固定電極４，５との
間の容量変化が僅小であり、温度影響の少ない高
精度な加速度センサを得ることができる。また、
シリコンカンチレバー２の中心軸上に重錘の機能
も含む可動電極３の重心がくるようにエツチング
加工されているため、検出部は可動電極３の変位
方向に対して、上下対称構造になつている。それ
故、上部ガラス板とシリコン板との界面の接着歪
及び下部ガラス板とシリコン板との界面の接着歪
が、可動電極３を上下に変位させる要因は互いに
相殺され、周囲温度の変化に対する可動電極３と
固定電極４，５との間の静電容量の変化を一層小
さくさせ、加速度センサの高性能化に寄与してい
る。 After stacking the upper glass wafer, middle silicon wafer, and lower glass wafer, the three wafers are aligned using an appropriate alignment jig. These stacked wafers
After heating to a high temperature of 300℃ or more, a high voltage is applied,
The bonding was performed by a so-called anodic bonding method. At this time, the movable electrode 3 is bonded to the fixed electrode 4 and the fixed electrode 5 so as to be located in the center thereof. When a borosilicate glass material is used for the glass plate, the coefficients of thermal expansion of the glass plate and the silicon plate are approximately equal, and the thermal distortion of the bonded surface between the two becomes extremely small. Therefore, even if the ambient temperature of the detection part changes, the movable electrode 3 with the fixed end of the cantilever 2 as a fulcrum is caused by thermal distortion of the adhesive part.
The vertical displacement of is minute. As a result, a capacitance change between the movable electrode 3 and the fixed electrodes 4 and 5 due to a change in ambient temperature is small, and a highly accurate acceleration sensor with little temperature influence can be obtained. Also,
Since the etching process is performed so that the center of gravity of the movable electrode 3, which also functions as a weight, is located on the central axis of the silicon cantilever 2, the detection part has a vertically symmetrical structure with respect to the displacement direction of the movable electrode 3. . Therefore, the factors that cause the movable electrode 3 to move up and down, such as the adhesive strain at the interface between the upper glass plate and the silicon plate and the adhesive strain at the interface between the lower glass plate and the silicon plate, cancel each other out, and the This further reduces the change in capacitance between the electrode 3 and the fixed electrodes 4 and 5, contributing to higher performance of the acceleration sensor.
次に、シリコン板１上に可動電極３のワイヤボ
ンデイング用のリード取出し電極２６（後述の第
７図参照）を蒸着によつて形成した。 Next, a lead extraction electrode 26 (see FIG. 7, which will be described later) for wire bonding of the movable electrode 3 was formed on the silicon plate 1 by vapor deposition.
孔１５と１６に軟かい接着剤を注入し、ダイシ
ング時に切粉や水などが可動電極３付近へ侵入す
るのを防止した。次に、目視観察による接合界面
の接合状態のチエツクや容量テスタによる可動電
極３と固定電極４，５との間の電気容量の計測を
行い、不良検出部を抽出してマーキングを行い、
ダイシング時に選別、除去できるようにした。 A soft adhesive was injected into the holes 15 and 16 to prevent chips, water, etc. from entering the vicinity of the movable electrode 3 during dicing. Next, the bonding state of the bonding interface is checked by visual observation, the capacitance between the movable electrode 3 and the fixed electrodes 4 and 5 is measured by a capacitance tester, and defective detection areas are extracted and marked.
It can now be sorted and removed during dicing.
次に、積層ウエハを同時にダイシングして、一
度に数百個の検出チツプを製作した。このよう
に、検出部の接着、選別、ダイシングをウエハ状
態で実行することにより、製造コストを低下させ
ることができる。 Next, the stacked wafers were diced simultaneously to produce several hundred detection chips at once. In this way, manufacturing costs can be reduced by performing bonding, sorting, and dicing of the detection portion in the wafer state.
良品の検出チツプを第７図に示す如く、有機接
着剤３４でステム３１へ接合した後、ワイヤボン
デイングとキヤプ接合作業を行い、加速度センサ
としての総合的な特性評価を行なつた。 As shown in FIG. 7, a non-defective detection chip was bonded to the stem 31 using an organic adhesive 34, and then wire bonding and cap bonding were performed to conduct a comprehensive characteristic evaluation as an acceleration sensor.
本発明による加速度センサの検出部の部組構造
を第７図に示す。ガラス板６、シリコン板１及び
ガラス板７を積層した検出チツプを縦弾性係数の
小さい（軟かい）有機接着剤３４（例えば、シリ
コンゴム）でステム３１上へ固定している。金属
性のステム３１には孔２７があいており、ガラス
材２８でリード２９をハーメチツクシール的に装
着している。ステム３１とガラス板７との熱膨張
係数は等しくないので、この部分の接着歪みが上
部の検出チツプに伝達しないように、接着剤３４
には軟かい接着剤であるシリコンゴムなどを用い
た。 FIG. 7 shows the subassembly structure of the detection section of the acceleration sensor according to the present invention. A detection chip in which a glass plate 6, a silicon plate 1, and a glass plate 7 are laminated is fixed onto a stem 31 with a soft organic adhesive 34 (for example, silicone rubber) having a small (soft) modulus of longitudinal elasticity. A metal stem 31 has a hole 27, and a lead 29 is attached thereto with a glass material 28 in a hermetically sealed manner. Since the thermal expansion coefficients of the stem 31 and the glass plate 7 are not equal, the adhesive 34 is
A soft adhesive such as silicone rubber was used.
次に、リード取出し電極２６とリード２９とに
導線３０をワイヤボンデイングして電気的に結線
した。N2あるいは乾燥大気中でキヤツプ３３を
ステム３１に接合し、部屋３２中にN2あるいは
乾燥大気を封入した。 Next, a conductive wire 30 was wire-bonded to the lead extraction electrode 26 and the lead 29 to electrically connect them. The cap 33 was joined to the stem 31 in N 2 or dry atmosphere, and the chamber 32 was filled with N 2 or dry atmosphere.
第７図の−視図、即ち平面図を第８図に示
す。リード取出し電極１８，１７，１９はそれぞ
れ孔２７−ａ，２７−ｂ，２７−ｃ内にハーメチ
ツク的にシールされたりリード２９−ａ，２９−
ｂ，２９−ｃに導線によつて外部の容量検出回路
と電気的に結線される。 FIG. 8 shows a - perspective view of FIG. 7, that is, a plan view. The lead extraction electrodes 18, 17, 19 are hermetically sealed in the holes 27-a, 27-b, 27-c, respectively, and the leads 29-a, 29-
b, 29-c are electrically connected to an external capacitance detection circuit by conductive wires.
可動電極の変位と変量変化との関係を第９図に
より説明する。可動電極３はＹ軸方向の加速度成
分に応答として、カンチレバー２の固定端３６を
支点としてＹ軸方向に上下動する。可動電極３と
固定電極４，５との間の初期ギヤツプをdoとす
る。doは高感度化の点から数μｍが望ましく、
do＝3μｍのものを試作し評価を行なつた。可動
電極３の重心を３５として、点線で示すようにそ
の重心位置が加速度によつてｗだけ変位したとす
る。図に示すように可動電極３の重心３５部のｗ
が大きくなるにつれて、可動電極３と固定電極
４，５との平行度のズレは高きくなる。 The relationship between the displacement of the movable electrode and the variable change will be explained with reference to FIG. The movable electrode 3 moves up and down in the Y-axis direction using the fixed end 36 of the cantilever 2 as a fulcrum in response to the acceleration component in the Y-axis direction. Let do be the initial gap between the movable electrode 3 and the fixed electrodes 4 and 5. From the point of view of high sensitivity, do is desirably several μm.
A prototype with do = 3 μm was manufactured and evaluated. Assume that the center of gravity of the movable electrode 3 is 35, and the center of gravity position is displaced by w due to acceleration as shown by the dotted line. As shown in the figure, w at the center of gravity 35 of the movable electrode 3
As becomes larger, the deviation in parallelism between the movable electrode 3 and the fixed electrodes 4 and 5 increases.
この平行度のズレを考慮して、可動電極３と固
定電極４，５との間の容量を解析した。この結果
を第１０図に示す。可動電極３の重心３５の変位
ｗに対する可動電極３と個低電極４，５との間の
容量C1，C2、及び容量の差分値ΔC（ΔC＝C2−
C1）の関係を示したものである。可動電極３の
表面電極部が長さ1.26mm、幅1.76mm、カンチレバ
ー２の長さが0.8mmのときの解析結果を示した。
可動電極３の変位ｗが大きくなるにつれて、変位
ｗに対する容量C1，C2及びその差分値ΔCの非線
形性が大きくなる。 The capacitance between the movable electrode 3 and the fixed electrodes 4 and 5 was analyzed in consideration of this deviation in parallelism. The results are shown in FIG. The capacitances C 1 and C 2 between the movable electrode 3 and the individual low electrodes 4 and 5 and the difference in capacitance ΔC (ΔC=C 2 −
This shows the relationship C1 ). The analysis results are shown when the surface electrode portion of the movable electrode 3 has a length of 1.26 mm and a width of 1.76 mm, and the length of the cantilever 2 is 0.8 mm.
As the displacement w of the movable electrode 3 increases, the nonlinearity of the capacitances C 1 and C 2 and their difference value ΔC with respect to the displacement w increases.
本発明による加速度センサの加速度に対する非
直線誤差の解析結果を第１１図に示す。±1Gの加
速度に対して、カンチレバー２の変位ｗ±0.6μｍ
になるように、カンチレバー２の幅を0.2mm、そ
の厚さを0.02mm、にエツチング加工したときの解
析結果を示した。０〜±1Gの測定範囲に対して、
約±３％の非直線誤差を有する。それ故、後述す
るような非直線誤差補償回路によつて、直線性の
改善を行なつた。なお、可動電極３と固定電極
４，５との間の容量C1，C2の変化ΔC1／C1及び
ΔC2／C2は約0.20で、歪ゲージ式加速度センサの
感度ΔR／Ｒ（Ｒは拡散抵抗の抵抗値）の約10倍
の値になり、高感度化を達成することができる。
しかも、±1Gの加速度が作用したときに、カンチ
レバー２の固定端３６に発生する最大応力は約
1MPa程度と小さく、歪ゲージ式の加速度センサ
の場合の約数十分の一に抑えることができ、高感
度化を達成しつつ耐衝撃性を向上させることがで
きる。よつて、約１ｍの高さからコンクリート上
へ落下（このとき、可動電極３には瞬間的に約
100G程度の衝撃加速度が作用する）させても、
カンチレバー２は破損することはなく、高い信頼
性を示した。また、カンチレバー２の厚さを20μ
ｍ（歪ゲージ式加速度センサの場合は約10μｍ）
と厚くできるので、カンチレバー２と可動電極３
よりなる検出部の固有振動数は約1.5kHzになる。
従つて、固有振動数は車体制御用加速度センサの
検出すべき周波数成分の０〜10Hzに対して十分に
大きく、変位部分にシリコンオイルなどの液体を
封入して、特にこれをダンピングさせなくても、
耐衝撃性を検出時の高精度化を両立させることが
できる。この分、検出部の部分組立構造と組立作
業とが簡単になり、低価格化に適している。 FIG. 11 shows an analysis result of non-linear error with respect to acceleration of the acceleration sensor according to the present invention. Displacement of cantilever 2 w±0.6μm for acceleration of ±1G
The analysis results are shown when the cantilever 2 is etched to have a width of 0.2 mm and a thickness of 0.02 mm. For a measurement range of 0 to ±1G,
It has a nonlinear error of approximately ±3%. Therefore, linearity was improved by using a non-linear error compensation circuit as described below. Note that the changes in capacitances C 1 and C 2 between the movable electrode 3 and fixed electrodes 4 and 5 ΔC 1 /C 1 and ΔC 2 /C 2 are approximately 0.20, and the sensitivity ΔR/R of the strain gauge type acceleration sensor ( R is approximately 10 times the resistance value of the diffused resistor, and high sensitivity can be achieved.
Moreover, when an acceleration of ±1G is applied, the maximum stress generated at the fixed end 36 of the cantilever 2 is approximately
It is as small as about 1 MPa, which is about a few tenths of that of a strain gauge type acceleration sensor, making it possible to achieve high sensitivity and improve impact resistance. Therefore, it fell onto the concrete from a height of about 1 m (at this time, the movable electrode 3 momentarily
Even if an impact acceleration of about 100G is applied,
Cantilever 2 was not damaged and showed high reliability. Also, the thickness of cantilever 2 is 20μ
m (approximately 10 μm for strain gauge type acceleration sensor)
cantilever 2 and movable electrode 3.
The natural frequency of the detection section is approximately 1.5kHz.
Therefore, the natural frequency is sufficiently large for the frequency component of 0 to 10 Hz that should be detected by the acceleration sensor for vehicle body control, and it is possible to do so without damping it by filling the displacement part with a liquid such as silicone oil. ,
It is possible to achieve both impact resistance and high accuracy during detection. This simplifies the partial assembly structure and assembly work of the detection section, making it suitable for lowering costs.
本発明に係る加速センサの、前記と異なる実施
例を第１２図に示す。 FIG. 12 shows a different embodiment of the acceleration sensor according to the present invention.
検出部の基本構造は、下記の点を除いて第１図
の実施例と同様である。 The basic structure of the detection section is the same as the embodiment shown in FIG. 1 except for the following points.
即ち、可動電極３が、図の左右に配置した１対
のシリコンのビーム４０，４１によつて支持され
ている。 That is, the movable electrode 3 is supported by a pair of silicon beams 40 and 41 placed on the left and right sides of the figure.
第１図の片持ち梁構造に比して第１２図は両持
ち梁構造であり、これにより感度は約1/10になる
が、大きくＧに耐え得る。その他の点については
前記実施例と同様の効果が得られる。 Compared to the cantilever structure shown in FIG. 1, the one shown in FIG. 12 has a double-end structure, which reduces the sensitivity to about 1/10, but can withstand a large amount of G. In other respects, the same effects as in the previous embodiment can be obtained.
本実施例の加速度センサの検出回路の構成を第
１３図に示す。検出部５３は固定端３６によつて
支持されたカンチレバー２の先端に形成された可
動電極３及び固定電極４，５よりなる。加速度に
対応して変化する可動電極３と固定電極４，５間
の静電容量を容量検出回路５０で測定し、増幅回
路５１で、増幅後、非線形補償回路５２により、
加速度に対する出力電圧V0の値線性を改善した。 FIG. 13 shows the configuration of the detection circuit of the acceleration sensor of this embodiment. The detection section 53 includes a movable electrode 3 and fixed electrodes 4 and 5 formed at the tip of the cantilever 2 supported by the fixed end 36. The capacitance between the movable electrode 3 and the fixed electrodes 4 and 5, which changes in response to acceleration, is measured by the capacitance detection circuit 50, amplified by the amplifier circuit 51, and then by the nonlinear compensation circuit 52.
The value linearity of output voltage V 0 with respect to acceleration has been improved.
試作センサの出力特性の一例を第１４図に示
す。図に示すように、０〜±1Gの加速度を高精
度に検出でき、車体制御用加速度センサとして好
適であることを確認した。 An example of the output characteristics of the prototype sensor is shown in FIG. As shown in the figure, it was confirmed that acceleration of 0 to ±1G can be detected with high accuracy, making it suitable as an acceleration sensor for vehicle body control.
本発明に係る容量式加速度センサは、構造が簡
単である。構造が簡単であるため価格が安く、小
型軽量に構成でき、信頼性が高い。しかも耐衝撃
性に優れ、かつ高感度である。
The capacitive acceleration sensor according to the present invention has a simple structure. Since the structure is simple, the price is low, it can be configured to be small and lightweight, and it is highly reliable. Moreover, it has excellent impact resistance and high sensitivity.
第１図は本発明による加速度センサ検出部の基
本構造を示す模式図、第２図は容量式加速度セン
サの基本構造図、第３図は検出部の展開図、第４
図は検出部シリコン板の詳細図、第５図はその断
面図、第６図は検出部の製造プロセスの説明図、
第７図は検出部の部分組立構造を示す断面図、第
８図はその平面図、第９図は可動電極の変位と容
量変化の関係の説明図、第１０図はその解析結果
を示す図表、第１１図は非直線誤差の解析結果を
示す図表、第１２図は本発明による加速度センサ
検出部の他の実施例、第１３図は検出回路の構成
説明図、第１４図は試作センサの出力特性を示す
図表である。
１……シリコン板、２……カンチレバー、３…
…可動電極、４，５……固定電極、６，７……ガ
ラス板、４０，４１……ビーム。
Fig. 1 is a schematic diagram showing the basic structure of the acceleration sensor detection section according to the present invention, Fig. 2 is a basic structure diagram of the capacitive acceleration sensor, Fig. 3 is an exploded view of the detection section, and Fig. 4
The figure is a detailed view of the detection unit silicon plate, Figure 5 is its cross-sectional view, and Figure 6 is an explanatory diagram of the manufacturing process of the detection unit.
Fig. 7 is a sectional view showing the partially assembled structure of the detection section, Fig. 8 is a plan view thereof, Fig. 9 is an explanatory diagram of the relationship between displacement of the movable electrode and capacitance change, and Fig. 10 is a diagram showing the analysis results. , Fig. 11 is a chart showing the analysis results of non-linear errors, Fig. 12 is another embodiment of the acceleration sensor detection section according to the present invention, Fig. 13 is an explanatory diagram of the configuration of the detection circuit, and Fig. 14 is a diagram of the prototype sensor. It is a chart showing output characteristics. 1... Silicon plate, 2... Cantilever, 3...
...Movable electrode, 4, 5... Fixed electrode, 6, 7... Glass plate, 40, 41... Beam.
Claims (1)
成した可動電極と、シリコン板を両面からエツ
チングして形成したカンチレバーとを一体に連
設して、上記カンチレバーによつて可動電極を
弾性的に支承し、 (b) 上記の可動電極及びカンチレバーを形成した
シリコン板を１対のガラス板で挟持し、 (c) 上記１対のガラス板のそれぞれが前記の可動
電板に対向している部分に板状の固定電極を固
着し、 (d) 前記のガラス板に固着された固定電極と、前
記カンチレバーによつて弾性的に支承された可
動電極との間に空隙を形成したことを特徴とす
る容量式加速度センサ。 ２ 前記可動電極の重心を、前記カンチレバーの
中心線上に位置せしめたことを特徴とする特許請
求の範囲第１項に記載の容量式加速度センサ。 ３ (a) シリコン板を両面からエツチングして形
成した可動電極と、上記シリコン板を両面から
エツチングして形成され、上記可動電極と一体
に連設された両持ち形の梁とを設け、 (b) 上記の可動電極及び両持ち梁とを形成したシ
リコン板を１対のガラス板で挟持し、 (c) 上記１対のガラス板のそれぞれが前記の可動
電板に対向している部分に板状の固定電極を固
着し、 (d) 前記のガラス板に固着された固定電極と、前
記のカンチレバーによつて弾性的に支承された
可動電極との間に空隙を形成したことを特徴と
する容量式加速度センサ。[Claims] 1 (a) A movable electrode formed by etching a silicon plate from both sides and a cantilever formed by etching a silicon plate from both sides are integrally connected, and the movable electrode is movable by the cantilever. (b) the silicon plate on which the movable electrode and cantilever are formed is sandwiched between a pair of glass plates; (c) each of the pair of glass plates is attached to the movable electric plate; A plate-shaped fixed electrode is fixed to the opposing parts, and (d) a gap is formed between the fixed electrode fixed to the glass plate and the movable electrode elastically supported by the cantilever. A capacitive acceleration sensor characterized by: 2. The capacitive acceleration sensor according to claim 1, wherein the center of gravity of the movable electrode is located on the center line of the cantilever. 3 (a) A movable electrode formed by etching a silicon plate from both sides, and a double-sided beam formed by etching the silicon plate from both sides and integrally connected to the movable electrode, ( b) The silicon plate forming the movable electrode and the double-supported beam is sandwiched between a pair of glass plates, and (c) Each of the pair of glass plates is placed in a portion facing the movable electric plate. A plate-shaped fixed electrode is fixed, and (d) a gap is formed between the fixed electrode fixed to the glass plate and the movable electrode elastically supported by the cantilever. Capacitive acceleration sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30968487A JPH01152369A (en) | 1987-12-09 | 1987-12-09 | Capacity type acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30968487A JPH01152369A (en) | 1987-12-09 | 1987-12-09 | Capacity type acceleration sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01152369A JPH01152369A (en) | 1989-06-14 |
| JPH0565109B2 true JPH0565109B2 (en) | 1993-09-17 |
Family
ID=17996033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30968487A Granted JPH01152369A (en) | 1987-12-09 | 1987-12-09 | Capacity type acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01152369A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0833410B2 (en) * | 1990-01-12 | 1996-03-29 | 株式会社日立製作所 | Acceleration sensor |
| JP2512171B2 (en) * | 1989-10-18 | 1996-07-03 | 株式会社日立製作所 | Acceleration detector |
| JPH0833411B2 (en) * | 1990-06-15 | 1996-03-29 | 株式会社日立製作所 | Semiconductor acceleration sensor |
| JPH0447271A (en) * | 1990-06-15 | 1992-02-17 | Hitachi Ltd | Acceleration sensor and method for controlling output voltage thereof |
| JPH04130277A (en) * | 1990-09-21 | 1992-05-01 | Nissan Motor Co Ltd | Semiconductor acceleration sensor |
| JP3194594B2 (en) * | 1990-09-26 | 2001-07-30 | 株式会社日立製作所 | Structure manufacturing method |
| DE4339190B4 (en) * | 1992-11-16 | 2006-04-13 | Denso Corp., Kariya | Semiconductor accelerometer |
| JP3303430B2 (en) * | 1993-05-21 | 2002-07-22 | 株式会社デンソー | FET type acceleration sensor |
| JP2010066231A (en) * | 2008-09-12 | 2010-03-25 | Mitsubishi Electric Corp | Acceleration sensor |
| JP4962482B2 (en) * | 2008-12-18 | 2012-06-27 | 株式会社デンソー | Semiconductor device |
-
1987
- 1987-12-09 JP JP30968487A patent/JPH01152369A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01152369A (en) | 1989-06-14 |
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