JPH0555282A - Manufacture of semiconductor device sealed with resin - Google Patents

Manufacture of semiconductor device sealed with resin

Info

Publication number
JPH0555282A
JPH0555282A JP21493591A JP21493591A JPH0555282A JP H0555282 A JPH0555282 A JP H0555282A JP 21493591 A JP21493591 A JP 21493591A JP 21493591 A JP21493591 A JP 21493591A JP H0555282 A JPH0555282 A JP H0555282A
Authority
JP
Japan
Prior art keywords
resin
lead frame
thin plate
leads
sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21493591A
Other languages
Japanese (ja)
Inventor
Hideyuki Nishikawa
秀幸 西川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21493591A priority Critical patent/JPH0555282A/en
Publication of JPH0555282A publication Critical patent/JPH0555282A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To dispense with a press mold for cutoff and removal of a tie bar by laying a lead frame without tie bars on a thin plate, having projections in the positions corresponding to the space between the adjacent plural leads of the lead frame, and then, sealing them with resin. CONSTITUTION:A rectangular hole 4 is formed in the section to be sealed with resin, and projections 5 are provided, in the positions corresponding to the space between the adjacent plural leads 2 of the lead frame 8 around the peripheries of the long sides so as to constitute a thin plate. Next, a semiconductor device 9 is mounted on the device mounting part 1 of the lead frame 8 without tie bars between the leads 2, and the device 9 and the tops of the leads 2 are connected by metallic fine wires. Next, the lead frame 8 is put on the thin plate, with the projections 5 inserted into the space between the leads, and then those are put on the lower mold for sealing with resin, and are clamped with the upper mold and the lower mold. Subsequently, sealing resin is injected into between the molds to seal the above parts with resin. At this time, the sealing resin is dammed with the projections 5. After the sealing resin has been cured, the lead frame 8 and the thin plate are separated.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は樹脂封止型半導体装置の
製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a resin-sealed semiconductor device.

【０００２】[0002]

【従来の技術】従来の樹脂封止型半導体装置は、まず、
図５に示すリードフレームの素子搭載部１に半導体素子
を搭載し、半導体素子とリード２の先端とを金属細線で
接続した後、リードフレームを樹脂封止金型で型締め
し、型内に封止樹脂を注入することにより、素子搭載部
に搭載された半導体素子，金属細線，内部リードなどを
樹脂封止する。2. Description of the Related Art A conventional resin-sealed semiconductor device is
A semiconductor element is mounted on the element mounting portion 1 of the lead frame shown in FIG. 5, the semiconductor element and the tip of the lead 2 are connected with a thin metal wire, and then the lead frame is clamped with a resin-sealed mold to be inserted into the mold. By injecting the sealing resin, the semiconductor element mounted on the element mounting portion, the thin metal wires, the internal leads, etc. are resin-sealed.

【０００３】この場合、樹脂封止金型の上型と下型に形
成された型の周辺部において、隣り合う複数のリード２
のすきまに充填される樹脂は、型の周囲を所定の間隔で
取り囲んで複数のリード２を連結するタイバー３によっ
てせき止められるようにしているのが一般的である。In this case, a plurality of leads 2 adjacent to each other are provided in the peripheral portion of the upper and lower molds of the resin sealing mold.
It is general that the resin filled in the clearance is surrounded by a tie bar 3 that surrounds the periphery of the mold at a predetermined interval and connects a plurality of leads 2.

【０００４】その後、タイバー３を切断除去し、外部リ
ードに半田めっき等の外装処理を行い、外部リードを所
定の形状に成形して得られる。After that, the tie bar 3 is cut and removed, the outer leads are subjected to an exterior treatment such as solder plating, and the outer leads are molded into a predetermined shape.

【０００５】[0005]

【発明が解決しようとする課題】上述した従来の技術で
は、樹脂封止後に複数のリードを連結しているタイバー
を切断除去しなければならない。タイバーは、通常、金
型により切断除去されるが、半導体装置の形状が異なる
ごとに専用の金型を製作しなければならず、多大の費用
がかかると同時に、金型製作に長時間を要するという問
題点がある。In the above-mentioned conventional technique, the tie bar connecting the plurality of leads must be cut and removed after the resin sealing. The tie bar is usually cut and removed by a mold, but it is necessary to manufacture a dedicated mold for each different shape of the semiconductor device, which is very expensive and requires a long time for mold manufacture. There is a problem.

【０００６】また、外部リードのピッチが小さくなるに
つれて金型の製造は難しくなり種々の問題が生じてき
た。たとえば、外部リードのピッチが０．４ｍｍで外部
リードの幅が０．２ｍｍの場合には、切断刃の先端の厚
さは、最大でも０．４−０．２＝０．２ｍｍにしかなら
ない。このように薄い切断刃は、かすづまり等の負荷に
より刃先が容易に破損してしまうため、保守に手間がか
かるという問題点もある。Further, as the pitch of the external leads becomes smaller, it becomes more difficult to manufacture the mold, and various problems have arisen. For example, when the pitch of the external leads is 0.4 mm and the width of the external leads is 0.2 mm, the thickness of the tip of the cutting blade is 0.4-0.2 = 0.2 mm at maximum. In such a thin cutting blade, the blade edge is easily damaged by a load such as clogging, so that maintenance is troublesome.

【０００７】さらに、金型によりタイバーを切断除去す
るときのリードフレームの位置合わせは、通常、リード
フレームに設けられている位置決め穴に、金型に設けら
れている位置決めピンを挿入することによってなされる
が、リードフレームおよび金型の製作時の誤差により多
少の位置ずれが生じる。外部リードピッチが小さい半導
体装置の場合には、たとえわずかな位置ずれであって
も、切断刃がリードにくいこんでしまい、歩留りを低下
させてしまうという問題点がある。Further, when the tie bar is cut and removed by the mold, the lead frame is generally aligned by inserting a positioning pin provided in the mold into a positioning hole provided in the lead frame. However, some misalignment occurs due to an error in manufacturing the lead frame and the mold. In the case of a semiconductor device having a small external lead pitch, there is a problem that even if the positional deviation is slight, the cutting blade is difficult to lead and the yield is reduced.

【０００８】本発明の目的は、金型の製作と保守が容易
で、歩留の高い樹脂封止型半導体装置の製造方法を提供
することにある。It is an object of the present invention to provide a method of manufacturing a resin-sealed semiconductor device, which is easy to manufacture and maintain a mold and has a high yield.

【０００９】[0009]

【課題を解決するための手段】本発明は、樹脂封止する
工程を含む樹脂封止型半導体装置の製造方法において、
タイバーのないリードフレームと該リードフレームの隣
り合う複数のリードのすきまと対応する位置に前記すき
まに挟入する突起を有する薄板を前記突起を前記すきま
に挟入して重ね合わせて樹脂封止し、樹脂封止後前期リ
ードフレームと前記薄板とを分離する工程を含む。The present invention provides a method of manufacturing a resin-encapsulated semiconductor device including a step of resin-encapsulating,
A thin plate having a lead frame without a tie bar and a protrusion to be inserted into the gap at a position corresponding to the gap between a plurality of adjacent leads of the lead frame is sandwiched with the protrusion and is overlapped and resin-sealed. After the resin encapsulation, the step of separating the lead frame from the thin plate is included.

【００１０】[0010]

【実施例】次に、本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will now be described with reference to the drawings.

【００１１】図１は本発明の第１の実施例に用いるリー
ドフレームに半導体素子を搭載した部分平面図、図２は
本発明の第１の実施例に用いる薄板の部分平面図、図３
は図１のリードフレームを図２の薄板上に重ね合わせた
ときの部分平面図である。FIG. 1 is a partial plan view of a semiconductor device mounted on a lead frame used in the first embodiment of the present invention. FIG. 2 is a partial plan view of a thin plate used in the first embodiment of the present invention.
FIG. 3 is a partial plan view of the lead frame of FIG. 1 superposed on the thin plate of FIG. 2.

【００１２】第１の実施例は、まず、図１に示すリード
２間にタイバーのないリードフレーム８を用い、素子搭
載部１に半導体素子９を搭載し、半導体素子９とリード
２の先端とを金属細線１０で接続し、このリードフレー
ム８を図２に示す薄板上に図３に示すように、突起８を
リード２間のすきまに挟入して重ね合わせる。In the first embodiment, first, the lead frame 8 having no tie bar between the leads 2 shown in FIG. 1 is used, the semiconductor element 9 is mounted on the element mounting portion 1, and the semiconductor element 9 and the tip of the lead 2 are connected. Are connected by metal wires 10, and the lead frame 8 is superposed on the thin plate shown in FIG. 2 by inserting the projections 8 into the gaps between the leads 2 as shown in FIG.

【００１３】図２に示すこの薄板の材質は銅であり、樹
脂封止部分には長方形の穴４があいており、その長辺の
周囲には突起５が図１のリードフレーム８の隣り合う複
数のリード２のすきまに対応した位置に設けられてい
る。この突起５は耐熱性ゴムでできており、その厚みは
図１のリードフレーム８の厚みよりも若干大きめになっ
ている。すなわち、リードフレーム８の厚みが２００μ
ｍであるのに対し、突起５の厚みは２２０μｍとする。The material of this thin plate shown in FIG. 2 is copper, a rectangular hole 4 is formed in the resin sealing portion, and a projection 5 is adjacent to the lead frame 8 of FIG. It is provided at a position corresponding to the clearance between the leads 2. The protrusion 5 is made of heat resistant rubber, and its thickness is slightly larger than the thickness of the lead frame 8 in FIG. That is, the thickness of the lead frame 8 is 200 μ
However, the thickness of the protrusions 5 is 220 μm.

【００１４】次に、図３に示す重ね合わされたリードフ
レーム８と薄板を樹脂封止金型の下型に乗せ、下型と上
型で型締めする。耐熱性ゴムでできた突起５は型締めの
圧力により、厚みが２２０μｍからリードフレーム８の
厚みである２００μｍにまで圧縮される。Next, the superposed lead frame 8 and thin plate shown in FIG. 3 are placed on the lower mold of the resin-sealed mold, and the lower mold and the upper mold are clamped. The protrusion 5 made of heat-resistant rubber is compressed by the pressure of the mold clamping from 220 μm in thickness to 200 μm which is the thickness of the lead frame 8.

【００１５】その後、封止樹脂を金型内に注入して樹脂
封止する。このとき、封止樹脂は、図３に示すように、
複数のリード２間のすきまに位置している耐熱性ゴムで
できた突起５によってせき止められる。封止樹脂が硬化
した後、重ね合わされて樹脂封止されたリードフレーム
８と薄板を金型からとりだしリードフレーム８と薄板を
分離する。After that, a sealing resin is injected into the mold for resin sealing. At this time, the sealing resin, as shown in FIG.
The protrusions 5 made of heat-resistant rubber, which are located in the clearances between the leads 2, block the leads 2. After the sealing resin is cured, the lead frame 8 and the thin plate which are superposed and resin-sealed are taken out from the mold, and the lead frame 8 and the thin plate are separated.

【００１６】従来技術では樹脂封止後、金型によりタイ
バーを切断除去する必要があったが、本実施例ではその
必要がなくなる。In the prior art, it was necessary to cut and remove the tie bar with a mold after resin sealing, but this is not necessary in this embodiment.

【００１７】図４は本発明の第２の実施例を説明するリ
ードフレームと薄板の要部断面図である。FIG. 4 is a sectional view of the main parts of the lead frame and the thin plate for explaining the second embodiment of the present invention.

【００１８】第２の実施例は、図４に示すように、第１
の実施例と同様、図１のタイバーのないリードフレーム
８を用いるのであるが、第１の実施例とは異なり、突起
５のある薄板を２枚用いる。すなわち、上側の薄板６と
下側の薄板７でリードフレーム８をはさんで樹脂封止金
型で型締めする。上側の薄板６の突起５および下側の薄
板７の突起５はいずれもリードフレーム８の隣り合う複
数のリード２のすきまに対応して設けられている。ま
た、いずれも材質は耐熱性ゴムであり、厚みは１１０μ
ｍである。The second embodiment, as shown in FIG.
Similar to the first embodiment, the lead frame 8 without the tie bar of FIG. 1 is used, but unlike the first embodiment, two thin plates having the protrusions 5 are used. That is, the lead frame 8 is sandwiched between the upper thin plate 6 and the lower thin plate 7, and the mold is clamped with a resin sealing mold. The protrusions 5 of the upper thin plate 6 and the protrusions 5 of the lower thin plate 7 are both provided in correspondence with the clearances between the adjacent leads 2 of the lead frame 8. In addition, the material is heat resistant rubber, and the thickness is 110μ.
m.

【００１９】上側，下側それぞれの薄板に設けられた突
起の厚みの和は、１１０＋１１０＝２２０μｍである
が、型締めの圧力によりリードフレームの厚みである２
２０μｍにまで圧縮される。The sum of the thicknesses of the protrusions provided on the upper and lower thin plates is 110 + 110 = 220 μm, which is the thickness of the lead frame due to the mold clamping pressure.
Compressed to 20 μm.

【００２０】樹脂封止後には、上側の薄板６，リードフ
レーム８，下側の薄板７を分離する。After the resin sealing, the upper thin plate 6, the lead frame 8 and the lower thin plate 7 are separated.

【００２１】このようにすると、第１の実施例よりも封
止樹脂を効果的にせきとめることができ、封止樹脂がは
み出して外部リードに付着することを防止できるという
利点がある。This has the advantage that the sealing resin can be more effectively stopped than in the first embodiment, and the sealing resin can be prevented from protruding and adhering to the external leads.

【００２２】[0022]

【発明の効果】以上説明したように本発明は、タイバー
のないリードフレームとリードフレームの隣り合う複数
のリードのすきまに対応する位置に突起の設けられてい
る薄板を重ね合わせて樹脂封止することにより、半導体
装置の形状が異なるごとに製作する必要のあった高価な
タイバー切断除去用プレス金型を不要にすることができ
るという効果がある。As described above, according to the present invention, a lead frame having no tie bar and a thin plate provided with a projection at a position corresponding to the clearance between a plurality of adjacent leads of the lead frame are superposed and resin-sealed. As a result, it is possible to eliminate the need for an expensive press die for cutting and removing the tie bar, which has to be manufactured for each different shape of the semiconductor device.

【００２３】また、リード間ピッチが小さくなるにつれ
てタイバー切断ずれによる不良が増加する傾向にあった
が、タイバー切断ずれによる不良を完全になくすことが
でき、安定したリード形状を得ることができるという効
果がある。Further, although the defects due to the tie bar cutting deviation tended to increase as the lead pitch became smaller, the defects due to the tie bar cutting deviation could be completely eliminated, and a stable lead shape could be obtained. There is.

【００２４】また、タイバー切断除去時にプレスによる
衝撃が生じたが、衝撃は全くなくなり、半導体装置の品
質向上がはかれるという効果がある。Further, when the tie bar is cut and removed, a shock is generated by the press, but there is an effect that the shock is completely eliminated and the quality of the semiconductor device is improved.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の第１の実施例に用いるリードフレーム
に半導体素子を搭載した部分平面図である。FIG. 1 is a partial plan view of a semiconductor device mounted on a lead frame used in a first embodiment of the present invention.

【図２】本発明の第１の実施例に用いる薄板の部分平面
図である。FIG. 2 is a partial plan view of a thin plate used in the first embodiment of the present invention.

【図３】図１のリードフレームを図２の薄板上に重ね合
わせたときの部分平面図である。FIG. 3 is a partial plan view of the lead frame of FIG. 1 superposed on the thin plate of FIG.

【図４】本発明の第２の実施例を説明するリードフレー
ムと薄板の要部断面図である。FIG. 4 is a sectional view of a main part of a lead frame and a thin plate for explaining a second embodiment of the present invention.

【図５】従来の樹脂封止型半導体装置の製造方法を説明
するリードフレームの一例の部分平面図である。FIG. 5 is a partial plan view of an example of a lead frame for explaining a conventional method for manufacturing a resin-sealed semiconductor device.

【符号の説明】[Explanation of symbols]

１ 素子搭載部 ２ リード ３ タイバー ４ 穴 ５ 突起 ６ 上側の薄板 ７ 下側の薄板 ８ リードフレーム ９ 半導体素子 １０ 金属細線 1 Element Mounting Part 2 Lead 3 Tie Bar 4 Hole 5 Protrusion 6 Upper Thin Plate 7 Lower Thin Plate 8 Lead Frame 9 Semiconductor Element 10 Thin Metal Wire

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】 樹脂封止する工程を含む樹脂封止型半導
体装置の製造方法において、タイバーのないリードフレ
ームと該リードフレームの隣り合う複数のリードのすき
まと対応する位置に前記すきまに挟入する突起を有する
薄板を前記突起を前記すきまに挟入して重ね合わせて樹
脂封止し、樹脂封止後前期リードフレームと前記薄板と
を分離する工程を含むことを特徴とする樹脂封止型半導
体装置の製造方法。1. A method of manufacturing a resin-encapsulated semiconductor device including a step of resin-encapsulating, wherein a lead frame having no tie bar and a gap between a plurality of adjacent leads of the lead frame are inserted into the gap. A resin-sealing type, which comprises a step of inserting a thin plate having a protrusion into the gap, superposing the protrusion on the protrusion, and resin-sealing the resin, and separating the lead frame from the thin plate after the resin-sealing. Method of manufacturing semiconductor device.
JP21493591A 1991-08-27 1991-08-27 Manufacture of semiconductor device sealed with resin Pending JPH0555282A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21493591A JPH0555282A (en) 1991-08-27 1991-08-27 Manufacture of semiconductor device sealed with resin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21493591A JPH0555282A (en) 1991-08-27 1991-08-27 Manufacture of semiconductor device sealed with resin

Publications (1)

Publication Number Publication Date
JPH0555282A true JPH0555282A (en) 1993-03-05

Family

ID=16664013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21493591A Pending JPH0555282A (en) 1991-08-27 1991-08-27 Manufacture of semiconductor device sealed with resin

Country Status (1)

Country Link
JP (1) JPH0555282A (en)

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