JPH0540919A - Magneto-resistance effect type head - Google Patents
Magneto-resistance effect type headInfo
- Publication number
- JPH0540919A JPH0540919A JP19797891A JP19797891A JPH0540919A JP H0540919 A JPH0540919 A JP H0540919A JP 19797891 A JP19797891 A JP 19797891A JP 19797891 A JP19797891 A JP 19797891A JP H0540919 A JPH0540919 A JP H0540919A
- Authority
- JP
- Japan
- Prior art keywords
- conductor layer
- capacitor
- magneto
- draw
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は磁気抵抗効果型ヘッドに
関し、磁気ディスク装置に用いられる薄膜の磁気抵抗効
果型ヘッドに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive head, and more particularly to a thin film magnetoresistive head used in a magnetic disk device.
【０００２】近年、コンピュータの外部記憶装置である
磁気ディスク装置の大容量化に伴い、磁気ヘッドの高性
能化が要求され、記録媒体との相対速度に依存せず高出
力が得られる磁気効果型ヘッド（ＭＲヘッド）が注目さ
れている。In recent years, with the increase in capacity of magnetic disk devices, which are external storage devices for computers, magnetic heads are required to have higher performance, and a magnetic effect type device that can obtain a high output without depending on the relative speed of a recording medium. A head (MR head) is drawing attention.
【０００３】[0003]
【従来の技術】図４，図５夫々は従来のＭＲヘッドと再
生回路の回路構成図、等価回路図を示す。2. Description of the Related Art FIGS. 4 and 5 show a circuit configuration diagram and an equivalent circuit diagram of a conventional MR head and a reproducing circuit, respectively.
【０００４】図４において、１１はＮｉＦｅ（ニッケル
鉄）の矩形のＭＲ素子、１２ａ，１２ｂは引き出し導体
層であり、１３は記録媒体である。In FIG. 4, 11 is a rectangular MR element of NiFe (nickel iron), 12a and 12b are lead conductor layers, and 13 is a recording medium.
【０００５】引き出し導体層１２ａ，１２ｂはＭＲ素子
１１の両端に電気的に接続され、引き出し導体層１２
ａ，１２ｂを介し電流源１５によって、ＭＲ素子１１の
信号検知領域１１ａにセンス電流が通電される。これに
より、図５に示す如く、ＭＲ素子１１は、信号検知領域
においてヘッド直下の記録媒体１３からの信号磁界によ
る抵抗変化を２つの引き出し導体層１２ａ，１２ｂの間
の電圧変化に変換し、そして、この電圧変化を差動増幅
器１７で増幅して記録媒体の情報を再生していた。 こ
こで、ＭＲ素子１１と差動増幅器１７との間にあるコン
デンサ１６は、直流分をカットして信号磁界による電圧
変化の交流分のみを増幅するためのカップリングコンデ
ンサである。The lead conductor layers 12a and 12b are electrically connected to both ends of the MR element 11, and
A current source 15 supplies a sense current to the signal detection region 11a of the MR element 11 via a and 12b. As a result, as shown in FIG. 5, the MR element 11 converts the resistance change due to the signal magnetic field from the recording medium 13 immediately below the head in the signal detection region into a voltage change between the two lead conductor layers 12a and 12b, and The voltage change is amplified by the differential amplifier 17 to reproduce the information on the recording medium. Here, the capacitor 16 between the MR element 11 and the differential amplifier 17 is a coupling capacitor for cutting the direct current component and amplifying only the alternating current component of the voltage change due to the signal magnetic field.
【０００６】[0006]
【発明が解決しようとする課題】コンデンサ１６はマイ
クロファラッド・オーダーの大容量のもので、差動増幅
器１７を集積化した集積回路内に集積化すると大面積と
なるために単体のものが用いられる。磁気ディスク装置
は複数のＭＲ素子を有するのが一般的であり、コンデン
サ１６は差動増幅器１７の集積回路の周辺にＭＲ素子数
だけ外付けされ、磁気ディスク装置をより小型化するこ
とができないという問題があった。The capacitor 16 has a large capacity on the order of microfarads, and since it has a large area when integrated in an integrated circuit in which the differential amplifier 17 is integrated, a single capacitor is used. Generally, the magnetic disk device has a plurality of MR elements, and the capacitor 16 is externally attached to the periphery of the integrated circuit of the differential amplifier 17 by the number of MR elements, and the magnetic disk device cannot be further miniaturized. There was a problem.
【０００７】本発明は上記の点に鑑みなされたもので、
コンデンサをＭＲ素子と一体化して磁気ディスク装置を
小型化できる磁気抵抗効果型ヘッドを提供することを目
的とする。The present invention has been made in view of the above points,
An object of the present invention is to provide a magnetoresistive head capable of integrating a capacitor with an MR element to downsize a magnetic disk device.
【０００８】[0008]
【課題を解決するための手段】本発明の磁気抵抗効果型
ヘッドは、磁気抵抗効果素子に引き出し導体層を通して
磁気抵抗効果素子に電流源よりセンス電流を通電し、記
録媒体からの信号磁界に応じた磁気抵抗効果素子の抵抗
変化を引き出し導体層より電圧変化として取り出し、コ
ンデンサを介して増幅器に供給して増幅する磁気抵抗効
果型ヘッドにおいて、引き出し導体層の一部と離間対向
する導体層と、引き出し導体層と導体層との間に形成さ
れた誘電体薄膜とで、コンデンサを形成する。In the magnetoresistive head of the present invention, a sense current is supplied from a current source to the magnetoresistive element through a lead conductor layer to the magnetoresistive element, and the magnetoresistive element responds to a signal magnetic field from the recording medium. In a magnetoresistive head in which a resistance change of a magnetoresistive effect element is extracted as a voltage change from an extraction conductor layer and is supplied to an amplifier via a capacitor for amplification, a conductor layer facing apart from a part of the extraction conductor layer, A capacitor is formed by the lead conductor layer and the dielectric thin film formed between the conductor layer.
【０００９】[0009]
【作用】本発明においては、引き出し導体層と誘電体薄
膜を挟んだ導体層とによりコンデンサを形成することに
よりコンデンサをヘッドと一体化して磁気ディスク装置
を小型化できる。In the present invention, the magnetic disk device can be miniaturized by forming the capacitor with the head by forming the capacitor with the lead conductor layer and the conductor layers sandwiching the dielectric thin film.
【００１０】[0010]
【実施例】図１は本発明ヘッドと再生回路の一実施例の
回路構成図を示す。同図中、図４と同一部分には同一符
号を付し、その説明を省略する。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a circuit diagram of an embodiment of the head and reproducing circuit of the present invention. In the figure, those parts which are the same as those corresponding parts in FIG. 4 are designated by the same reference numerals, and a description thereof will be omitted.
【００１１】図１において、１１はＮｉＦｅの矩形のＭ
Ｒ素子、１２ａ，１２ｂはＡｕ（金）の導体層であり、
１３は記録媒体である。In FIG. 1, 11 is a rectangular M of NiFe.
R elements, 12a, 12b are conductor layers of Au (gold),
Reference numeral 13 is a recording medium.
【００１２】引き出し導体層１２ａの一端１２ａ1 は図
２の断面図を示す如く、基板２０上に形成されたＭＲ素
子１１に接触させて形成されている。また引き出し導体
層１２ａの他端１２ａ2 は、基板２０上に形成したＡｕ
の導体層２１上に更にＢａＴｉＯ3 （チタン酸バリウ
ム），又はＡｌ2 Ｏ3 （アルミナ），ＳｉＯ2 （酸化シ
リコン）等の誘電体薄膜２２を形成し、この誘電体薄膜
２２上にかぶせた状態で導体層２１と離間対向して形成
されている。One end 12a 1 of the lead conductor layer 12a is formed in contact with the MR element 11 formed on the substrate 20, as shown in the sectional view of FIG. The other end 12a 2 of the lead conductor layer 12a is made of Au formed on the substrate 20.
A dielectric thin film 22 of BaTiO 3 (barium titanate), Al 2 O 3 (alumina), SiO 2 (silicon oxide), or the like is further formed on the conductor layer 21 of FIG. Is formed so as to face the conductor layer 21 at a distance.
【００１３】引き出し導体層１２ａは図１に示す如く電
流源１５に接続され、引き出し導体層１２ｂは差動増幅
器１７の反転入力端子に接続されると共に接地されてお
り、電流源１５よりのセンス電流が引き出し導体層１２
ａ，１２ｂを通してＭＲ素子１１に通電される。The lead conductor layer 12a is connected to the current source 15 as shown in FIG. 1, and the lead conductor layer 12b is connected to the inverting input terminal of the differential amplifier 17 and grounded. Is the lead conductor layer 12
The MR element 11 is energized through a and 12b.
【００１４】引き出し導体層１２ａの他端１２ａ2 と導
体層２１との間で図３の等価回路図に示すコンデンサ２
３が形成されており、導体層２１は差動増幅器１７の非
反転入力端子に接続されている。Between the other end 12a 2 of the lead conductor layer 12a and the conductor layer 21, the capacitor 2 shown in the equivalent circuit diagram of FIG.
3 is formed, and the conductor layer 21 is connected to the non-inverting input terminal of the differential amplifier 17.
【００１５】ＭＲ素子１１及び引き出し導体層１２ａ，
１２ｂのパターンは差動増幅器１７を集積化した集積回
路を構成するパターンに比して大きく、引き出し導体層
１２ａの端部１２ａ2 と、これに誘電体薄膜２２を挟ん
で対向する導体層２１によって大容量のコンデンサ２３
を形成することができ、このために引き出し導体層１２
ａを大型化する必要はない。The MR element 11 and the lead conductor layer 12a,
The pattern 12b is larger than the pattern forming an integrated circuit in which the differential amplifier 17 is integrated, and is formed by the end portion 12a 2 of the lead conductor layer 12a and the conductor layer 21 facing the end portion 12a 2 with the dielectric thin film 22 interposed therebetween. Large-capacity capacitor 23
The lead conductor layer 12
There is no need to upsize a.
【００１６】これによって従来の如く複数の差動増幅器
１７を集積化した集積回路にＭＲ素子数分のコンデンサ
を外付けする必要がなく、磁気ディスク装置を小型化す
ることが可能となる。As a result, it is not necessary to externally attach capacitors for the number of MR elements to an integrated circuit in which a plurality of differential amplifiers 17 are integrated as in the conventional case, and the magnetic disk device can be miniaturized.
【００１７】[0017]
【発明の効果】上述の如く、本発明の磁気抵抗効果型ヘ
ッドによれば、コンデンサをＭＲ素子と一体化して磁気
ディスク装置を小型化でき、実用上きわめて有用であ
る。As described above, according to the magnetoresistive head of the present invention, the capacitor can be integrated with the MR element to miniaturize the magnetic disk device, which is extremely useful in practice.
【図１】本発明ヘッドと再生回路の一実施例の回路構成
図である。FIG. 1 is a circuit configuration diagram of an embodiment of a head and a reproducing circuit of the present invention.
【図２】図１のヘッドの断面図である。FIG. 2 is a cross-sectional view of the head of FIG.
【図３】図１の等価回路図である。FIG. 3 is an equivalent circuit diagram of FIG.
【図４】従来ヘッドと再生回路の一例の回路構成図であ
る。FIG. 4 is a circuit configuration diagram of an example of a conventional head and a reproducing circuit.
【図５】図４の等価回路図である。5 is an equivalent circuit diagram of FIG.
１１ ＭＲ素子 １２ａ，１２ｂ 引き出し導体層 １３ 記録媒体 １７ 差動増幅器 ２０ 基板 ２１ 導体層 ２２ 誘電体薄膜 ２３ コンデンサ 11 MR element 12a, 12b Lead-out conductor layer 13 Recording medium 17 Differential amplifier 20 Substrate 21 Conductor layer 22 Dielectric thin film 23 Capacitor
Claims (1)
体層（１２ａ）を通して該磁気抵抗効果素子（１１）に
電流源（１５）よりセンス電流を通電し、記録媒体（１
３）からの信号磁界に応じた該磁気抵抗効果素子の抵抗
変化を該引き出し導体層（１２ａ）より電圧変化として
取り出し、コンデンサ（２３）を介して増幅器（１７）
に供給して増幅する磁気抵抗効果型ヘッドにおいて、 該引き出し導体層（１２ａ）の一部と離間対向する導体
層（２１）と、 該引き出し導体層（１２ａ）と導体層（２１）との間に
形成された誘電体薄膜とで、該コンデンサ（２３）を形
成したことを特徴とする磁気抵抗効果型ヘッド。1. A recording medium (1) is obtained by passing a sense current from a current source (15) to the magnetoresistive effect element (11) through a lead conductor layer (12a).
3) The resistance change of the magnetoresistive element according to the signal magnetic field from 3) is taken out as a voltage change from the lead-out conductor layer (12a), and the amplifier (17) is passed through the capacitor (23).
In a magnetoresistive head for supplying and amplifying to a conductor, a conductor layer (21) facing apart from a part of the lead conductor layer (12a) and between the lead conductor layer (12a) and the conductor layer (21). A magnetoresistive head, wherein the capacitor (23) is formed of the dielectric thin film formed on the.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19797891A JPH0540919A (en) | 1991-08-07 | 1991-08-07 | Magneto-resistance effect type head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19797891A JPH0540919A (en) | 1991-08-07 | 1991-08-07 | Magneto-resistance effect type head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0540919A true JPH0540919A (en) | 1993-02-19 |
Family
ID=16383485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19797891A Withdrawn JPH0540919A (en) | 1991-08-07 | 1991-08-07 | Magneto-resistance effect type head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0540919A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8117736B2 (en) | 2008-12-11 | 2012-02-21 | Tdk Corporation | Method of lapping a magnetic head slider |
-
1991
- 1991-08-07 JP JP19797891A patent/JPH0540919A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8117736B2 (en) | 2008-12-11 | 2012-02-21 | Tdk Corporation | Method of lapping a magnetic head slider |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19981112 |