JPH05335630A - Thermoelectric conversion module and thermoelectric conversion device using it - Google Patents
Thermoelectric conversion module and thermoelectric conversion device using itInfo
- Publication number
- JPH05335630A JPH05335630A JP3290132A JP29013291A JPH05335630A JP H05335630 A JPH05335630 A JP H05335630A JP 3290132 A JP3290132 A JP 3290132A JP 29013291 A JP29013291 A JP 29013291A JP H05335630 A JPH05335630 A JP H05335630A
- Authority
- JP
- Japan
- Prior art keywords
- thermoelectric conversion
- type
- heat
- conversion module
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は，Ｎ型及びＰ型の半導体
素子チップ一対を基本ユニットとし，ゼーベック効果に
よって熱的エネルギーを電気的エネルギーに，又は，ペ
ルチェ効果によって電気的エネルギーを熱的エネルギー
に変換する熱電気変換モジュールとそれを用いた熱電気
変換装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention uses a pair of N-type and P-type semiconductor element chips as a basic unit and converts thermal energy into electric energy by the Seebeck effect or electric energy by the Peltier effect. The present invention relates to a thermoelectric conversion module for converting into a thermoelectric conversion module and a thermoelectric conversion device using the same.
【０００２】[0002]
【従来の技術】図１２は従来の熱電気変換装置の熱電気
変換モジュールを示す図である（特願平３−１８５３１
８号，以下，参考文献１と呼ぶ）。図１２で示すよう
に，熱電子変換モジュールは，耐熱絶縁平板５２上に，
金属セグメント５３，５３…を半田５４接合し，この金
属セグメント５３に，機械的に，そして適当に切断され
た一対のＮ型及びＰ型の半導体素子チップ５１ａ及び５
１ｂを電気的に直列に，そして熱的に並列となるように
半田５４で接合して，熱電対を形成し，また，こうして
作製した複数の熱電対を前記したものと同様の耐熱絶縁
平板５２上に配列された金属セグメント５３と接合し
て，丁度一対の耐熱絶縁平板５１，５２に挟み込まれた
ような形状に組み立てられている。2. Description of the Related Art FIG. 12 is a view showing a thermoelectric conversion module of a conventional thermoelectric conversion device (Japanese Patent Application No. 3-18531).
No. 8, hereinafter referred to as Reference Document 1). As shown in FIG. 12, the thermionic conversion module has a heat-resistant insulating flat plate 52,
The metal segments 53, 53 ... Are joined to the solder 54, and the pair of N-type and P-type semiconductor element chips 51a and 5 mechanically and appropriately cut to the metal segment 53.
1b is electrically connected in series and thermally parallel to each other with solder 54 to form a thermocouple, and a plurality of thermocouples thus produced are heat-resistant insulating flat plates 52 similar to those described above. It is assembled into a shape such that it is joined to the metal segment 53 arranged above and sandwiched between a pair of heat-resistant insulating flat plates 51 and 52.
【０００３】このＮ型及びＰ型半導体素子材５１ａ，５
１ｂとして，Ｂｉ2 Ｔｅ3 系半導体化合物単結晶材が最
も優れた熱電特性を示す事は，古くから良く知られてい
るが，約４０年間，室温近傍でこれを凌駕する特性を持
つ材料は，未だ発見されていない。この半導体化合物単
結晶材を用いた熱電気変換素子が熱電子冷却用モジュー
ルとして，現在も尚，広く使用されている。また，上記
半導体化合物単結晶材のｃ面内に結晶軸を持つ方向の熱
電特性は，溶製材及び粉末焼結材のそれに比して，より
優れていることも既に知られている。The N-type and P-type semiconductor element materials 51a, 5
As 1b, it has been well known for a long time that Bi 2 Te 3 based semiconductor compound single crystal materials have the best thermoelectric properties, but materials with properties that surpass this at room temperature for about 40 years are as follows. It has not been discovered yet. A thermoelectric conversion element using this semiconductor compound single crystal material is still widely used as a module for thermoelectric cooling. Further, it has been already known that the thermoelectric properties of the semiconductor compound single crystal material in the direction having the crystal axis in the c-plane are superior to those of the ingot material and the powder sintered material.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら，前記半
導体化合物単結晶材は，結晶構造上ｃ面間の結合力が弱
く，振動衝撃又は熱歪み等によってｃ面で剥離し易いと
いう欠陥を有している。そのために，この単結晶材を使
用して熱電気変換素子を構成した場合に，素子間の接合
面での破壊が生じ易く，熱電特性の劣化を引き起こし易
いという欠点を有している。これらの理由から，前記単
結晶材は，優れた熱電特性を有しながらも，実用材とし
ての利用は敬遠されてきた。勿論，従来から使用されて
いる前記溶成材及び粉末焼結材の場合にも，相対的な問
題ではあるが，前記接合面での熱歪みによる破壊に対す
るモジュール構造上の優れた防御策は，未だ完成されて
いない。従って，小さなＮ型及びＰ型半導体化合物素子
チップを電気的に平面内に配列し，固定した従来の熱電
気変換モジュールをもって，熱歪みによる熱電気変換素
子の破壊に対する防御策をたてることは，構造上難し
い。その意味から，従来の熱電気変換モジュール構造
は，古くから使用されてはいるが未だ完成されてないと
言えよう。However, the above-mentioned semiconductor compound single crystal material has a defect that the bonding force between the c-planes is weak due to its crystal structure and that the semiconductor compound single-crystal material is easily separated at the c-plane due to vibration impact or thermal strain. There is. Therefore, when a thermoelectric conversion element is constructed by using this single crystal material, there is a drawback that the joint surface between the elements is easily broken and the thermoelectric characteristics are easily deteriorated. For these reasons, the single crystal material has been avoided from being used as a practical material while having excellent thermoelectric properties. Of course, even in the case of the above-mentioned fused material and powder-sintered material which have been used conventionally, although there is a relative problem, an excellent defense measure in the module structure against the destruction due to the thermal strain at the joint surface is still unsolved. Not completed. Therefore, with the conventional thermoelectric conversion module in which small N-type and P-type semiconductor compound device chips are electrically arranged in a plane and fixed, it is necessary to take a protective measure against the destruction of the thermoelectric conversion device due to thermal strain. Structurally difficult. In that sense, it can be said that the conventional thermoelectric conversion module structure has been used for a long time but has not been completed yet.
【０００５】そこで，本発明の技術的課題は，一方向凝
固（単結晶ライク）チップ材の優れた特性を生かし，し
かも，その欠点の一つである素子材料の機械的強度の弱
さ（熱歪みによる，素子破壊，半田接合点での剥離等）
に対する補強構造を持つ，熱電気変換モジュールを使用
し，更に，そのシステム上においても熱歪みに対する防
御策を考慮した構造を持つ熱電気変換モジュールとそれ
を用いた熱電気変換装置を提供することにある。Therefore, the technical problem of the present invention is to make use of the excellent characteristics of the unidirectionally solidified (single crystal-like) chip material, and yet one of the drawbacks is the weak mechanical strength of the element material (heat resistance). Destruction due to distortion, peeling at solder joints, etc.)
To provide a thermoelectric conversion module and a thermoelectric conversion device using the thermoelectric conversion module, which has a structure that takes into consideration protection measures against thermal strain in the system, using the thermoelectric conversion module having a reinforcement structure for is there.
【０００６】[0006]
【課題を解決するための手段】本発明では，上記素子歳
材チップ接合面に加わる機械的剪断応力を如何にして吸
収回避するかという技術的課題を解決するために，素子
固定部として，耐熱絶縁材の孔の中で，上記Ｎ型及びＰ
型半導体素子材原料を直接溶解，凝固させた熱電気変換
素子チップか，或いは又既に溶解，焼結等の方法で作製
された熱電気変換素子チップが，耐熱絶縁材の中に，挿
入，配列，固定されたものが用いられる。この時，この
耐熱絶縁材の貫通孔の内壁が外力に対して，防壁とな
り，その貫通孔の中に固定されている熱電気変換素子チ
ップの破壊を防ぐ。これを本発明の熱電気変換モジュー
ルの基本構造とする。According to the present invention, in order to solve the technical problem of how to avoid and avoid the mechanical shear stress applied to the joining surface of the element aged material chip, the element fixing portion is made of a heat-resistant material. In the hole of the insulating material, the N type and P
Type semiconductor element material raw material is directly melted and solidified thermoelectric conversion element chip, or the thermoelectric conversion element chip already manufactured by the method such as melting and sintering is inserted and arranged in the heat resistant insulating material. , The fixed one is used. At this time, the inner wall of the through-hole of the heat-resistant insulating material serves as a barrier against external force and prevents the thermoelectric conversion element chip fixed in the through-hole from being destroyed. This is the basic structure of the thermoelectric conversion module of the present invention.
【０００７】即ち，本発明によれば，第１耐熱絶縁材の
複数の貫通孔にＮ型又はＰ型半導体素子チップが少なく
とも隣り合う一対の半導体素子チップがＮ型及びＰ型と
なるようにＮ，Ｐ，Ｎ，Ｐ…の順で，両端を露出するよ
うに挿入された素子固定部と，複数個の金属セグメント
が配列し接合され，当該金属セグメントを有する面を互
いに対向させて，前記Ｎ型又はＰ型半導体素子チップの
夫々の両端を接続するように，前記素子固定部を挟み込
む第１及び第２耐熱性絶縁材とを備えていることを特徴
とする熱電気変換モジュールが得られる。That is, according to the present invention, the N-type or P-type semiconductor element chips are at least N-type and P-type so that a pair of semiconductor element chips adjacent to each other are N-type and P-type in the plurality of through holes of the first heat-resistant insulating material. , P, N, P ... In this order, a plurality of metal segments are arranged and joined to the element fixing part inserted so that both ends are exposed, and the surfaces having the metal segments are made to face each other, and the N A thermoelectric conversion module is provided, which is provided with first and second heat-resistant insulating materials that sandwich the element fixing portion so as to connect both ends of each of the P-type or P-type semiconductor element chips.
【０００８】本発明では，前述した基本構造を採ること
によって，従来の熱電気変換モジュールの機械的及び熱
歪みに対する弱さを補強することが可能になった。According to the present invention, by adopting the above-mentioned basic structure, it becomes possible to reinforce the weakness of the conventional thermoelectric conversion module against mechanical and thermal distortion.
【０００９】また，本発明においては，別々の一層から
なる耐熱絶縁材の孔の中で，Ｎ型及びＰ型半導体素子材
チップを持つ個々の素子固定部を交互に平面的に重ね合
わせ，配設し，一定の枠型の中に固定することによっ
て，或いは又，上記Ｎ型及びＰ型半導体素子材原料の溶
製材及び焼結材から切断された素子チップを耐熱絶縁材
の孔の中にＮＰＮＰ…の順に配設すること等によって，
素子固定部は作製される。それらの素子チップと金属セ
グメントをもって，Ｎ型及びＰ型半導体素子対を形成さ
せ，電気的に直列に結合させ，それを熱電気変換モジュ
ールとする。金属セグメントを使用せずに，素子固定部
内の素子を低融点材でもって，電気的に直列に結合させ
てモジュールとすることも可能である。Further, according to the present invention, the individual element fixing portions having the N-type and P-type semiconductor element material chips are alternately superposed and arranged in a plane in the holes of the heat-resistant insulating material formed of separate layers. Device and fixed in a fixed frame shape, or alternatively, the element chip cut from the ingot and sintered material of the N-type and P-type semiconductor element material is placed in the hole of the heat-resistant insulating material. By arranging NPNP ... in order,
The element fixing portion is manufactured. An N-type and P-type semiconductor element pair is formed with those element chips and metal segments, and electrically coupled in series to form a thermoelectric conversion module. It is also possible to electrically connect the elements in the element fixing portion with a low melting point material in series without using metal segments to form a module.
【００１０】即ち，本発明によれば，耐熱絶縁体の複数
の貫通孔にＮ型又はＰ型半導体素子チップがＮ，Ｐ，
Ｎ，Ｐ…の順で，両端を露出するように挿入された素子
固定部と，前記Ｎ型又はＰ型半導体素子チップの両端同
士を夫々接合する低融点導電性接合材とを備えたことを
特徴とする熱電気変換モジュールが得られる。That is, according to the present invention, the N-type or P-type semiconductor device chip is provided with N, P,
In the order of N, P ..., An element fixing portion inserted so as to expose both ends and a low melting point conductive bonding material for bonding both ends of the N-type or P-type semiconductor element chip are provided. A characteristic thermoelectric conversion module is obtained.
【００１１】本発明においては，このように構成された
熱電気変換モジュールと，高熱流伝達管と，低熱流伝達
管と，システム連結帯からなり，それを，一定の圧力
で，平行に押さえ付けて，互いの熱の伝達をスムーズに
する。これを熱電気変換装置の基本システムとする。用
途規模に応じて，これを連続的に結合させ，熱電気変換
総合システムを構築することも可能である。According to the present invention, the thermoelectric conversion module, the high heat flow transfer tube, the low heat flow transfer tube, and the system connecting zone configured as described above are pressed in parallel at a constant pressure. Smooth the heat transfer between each other. This is the basic system of the thermoelectric converter. It is also possible to construct a total thermoelectric conversion system by continuously connecting them according to the scale of application.
【００１２】即ち，本発明によれば，前記したいずれか
の熱電気変換モジュールを複数と，前記複数の熱電気変
換モジュール間に，交互に配置される低熱流伝達管及び
高熱流伝達管と，少なくとも前記熱電気変換モジュール
を覆うシステム連結帯からなる基本ユニットを備えたこ
とを特徴とする熱電気変換装置が得られる。That is, according to the present invention, a plurality of any one of the thermoelectric conversion modules described above, and a low heat flow transfer tube and a high heat flow transfer tube alternately arranged between the plurality of thermoelectric conversion modules, A thermoelectric conversion device comprising a basic unit including a system coupling band covering at least the thermoelectric conversion module is obtained.
【００１３】[0013]
【作用】本発明においては，Ｎ型又はＰ型半導体素子チ
ップが，複数個の金属セグメントに接合されており，こ
の一端の接合部分に熱を加えるとゼーベック効果によっ
て，ＰからＮ型半導体素子の方向に起電力が生じる。In the present invention, an N-type or P-type semiconductor element chip is joined to a plurality of metal segments, and when heat is applied to the joint portion at one end, the Seebeck effect causes the P to N-type semiconductor element chip to move. An electromotive force is generated in the direction.
【００１４】[0014]
【実施例】以下に本発明の実施例について，図面を参照
して説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１５】図１は本発明の実施例に係る熱電気変換冷
却装置の基本ユニットの構成を示す部分断面図である。
図１に示すように，熱電気変換装置の基本ユニットは，
Ｐ型半導体化合物を有する熱電気変換モジュール１と，
この熱電気変換モジュール１の両側に設けられた高熱流
伝達管２，２と，この熱電気変換モジュール１，１間に
配置された低熱流伝達管３とを備えている。熱電気変換
モジュール１は，耐熱絶縁材の夫々の図示しない孔の中
でそれぞれ成長させたＮ型及びＰ型半導体の単結晶又は
一方向凝固素子を備えている。高熱流伝達管２は中空の
導電性材料からなる。また，低熱流伝達管３も中空の導
電性材料からなる。低熱流伝達管３とその両側の熱電気
変換モジュール１と，この熱電気変換モジュール１の両
側に接する高熱流伝達管３の各々の一端部とは，弾力性
のある断熱材システム連結帯５によって覆われている。
このシステム連結帯５と各熱電気変換モジュール１，１
との間には，断熱材６が充填されている。尚，図面で
は，低熱流伝達管３，３の他端側は，他の基本ユニット
を形成するために，前記基本ユニットと同様にシステム
連結帯５によって覆われている。低熱流伝達管３の一端
３ａ（図では下方）は，延在して断熱材システム連結帯
５より突出し，更に断熱材７の壁部を貫通して外部に突
出している。また，各熱電気変換モジュールの断熱材６
とは，対向する側に電気接続端８が，断熱材及びシステ
ム連結帯５に設けられた貫通孔を貫通して引き出されて
いる。FIG. 1 is a partial sectional view showing the construction of a basic unit of a thermoelectric conversion cooling device according to an embodiment of the present invention.
As shown in Fig. 1, the basic unit of the thermoelectric converter is
A thermoelectric conversion module 1 having a P-type semiconductor compound;
The thermoelectric conversion module 1 is provided with high heat flow transfer tubes 2 and 2 provided on both sides thereof and a low heat flow transfer tube 3 disposed between the thermoelectric conversion modules 1 and 1. The thermoelectric conversion module 1 comprises single crystal or unidirectionally solidified elements of N-type and P-type semiconductors respectively grown in holes (not shown) of a heat-resistant insulating material. The high heat flow transfer tube 2 is made of a hollow conductive material. The low heat flow transfer pipe 3 is also made of a hollow conductive material. The low heat flow transfer pipe 3 and the thermoelectric conversion modules 1 on both sides thereof, and one end of each of the high heat flow transfer pipes 3 contacting both sides of the thermoelectric conversion module 1 are connected by the elastic heat insulating material system connection band 5. Is covered.
This system connection belt 5 and each thermoelectric conversion module 1, 1
A heat insulating material 6 is filled in between. In the drawing, the other ends of the low heat flow transfer pipes 3 are covered with a system connecting band 5 in the same manner as the basic unit to form another basic unit. One end 3a (downward in the figure) of the low heat flow transfer pipe 3 extends and projects from the heat insulating material system connecting band 5, and further penetrates the wall of the heat insulating material 7 and projects to the outside. In addition, the heat insulating material 6 of each thermoelectric conversion module
Means that the electric connection end 8 is pulled out through the through holes provided in the heat insulating material and the system connecting band 5 on the opposite side.
【００１６】図２（ａ），（ｂ），図３（ａ），
（ｂ），図４（ａ），（ｂ）は，本発明の一実施例に係
る熱電気変換モジュールを構成する部品を示す図で，図
２（ａ），（ｂ）は金属セグメントが接合（又は，接
着）された耐熱絶縁材である第１接合部を示す側面図及
び正面図，図３（ａ），（ｂ）は素子固定部を示す側断
面図及び正面図，図４（ａ），（ｂ）は金属セグメント
が接合（又は，接着）された耐熱絶縁材である第２接合
部を示す側面図及び正面図である。2 (a), 2 (b), 3 (a),
4 (a), 4 (a) and 4 (b) are views showing components constituting a thermoelectric conversion module according to an embodiment of the present invention. In FIGS. 2 (a) and 2 (b), metal segments are joined. FIG. 3A and FIG. 3B are side views and a front view showing the first joint part which is (or is bonded to) the heat-resistant insulating material, and FIG. 3A and FIG. ), (B) are a side view and a front view showing a second joint portion which is a heat-resistant insulating material in which metal segments are joined (or bonded).
【００１７】図２（ａ），（ｂ）において，第１接合部
２０は，四角形の耐熱絶縁材表面に直方体状の金属セグ
メント２２が半田固定されている。In FIGS. 2A and 2B, in the first joint portion 20, a rectangular parallelepiped metal segment 22 is soldered and fixed to the surface of a quadrangular heat-resistant insulating material.
【００１８】図３（ａ），（ｂ）において，素子固定部
２３は，耐熱絶縁材２４に設けられた角柱状の貫通孔２
４ａ，２４ａ，…にＮ型半導体素子材及びＰ型半導体素
子材を相隣あう半導体素子材がそれぞれ別の極性をもつ
ように，それぞれ挿入して，凝固固定してＮ型半導体素
子チップ２５，Ｐ型半導体素子チップ２６が形成されて
いる。In FIGS. 3A and 3B, the element fixing portion 23 has a prismatic through hole 2 provided in the heat resistant insulating material 24.
The N-type semiconductor element material and the P-type semiconductor element material are respectively inserted into 4a, 24a, ... so that the adjacent semiconductor element materials have different polarities, and solidified and fixed to form the N-type semiconductor element chip 25, A P-type semiconductor element chip 26 is formed.
【００１９】図４（ａ），（ｂ）において，第２接合部
２７は，金属セグメント３０が，耐熱絶縁材２８に半田
層２９を介して固定されている。In FIGS. 4A and 4B, in the second joint portion 27, the metal segment 30 is fixed to the heat resistant insulating material 28 via the solder layer 29.
【００２０】図５は図２（ａ），（ｂ），図３（ａ），
（ｂ），図４（ａ），（ｂ）に夫々示した第１接合部，
素子固定部，第２接合部から熱電気変換モジュールを組
み立てたときの図である。FIG. 5 shows FIGS. 2 (a), 2 (b), 3 (a),
(B), the first joint shown in FIGS. 4 (a) and 4 (b),
It is a figure when a thermoelectric conversion module is assembled from an element fixing part and a 2nd junction.
【００２１】図５で示すように，素子固定部２３の両端
が，第１接合部２０及び第２接合部２７の夫々の金属セ
グメント２２及び３０にって挟み込まれた形状となって
いる。素子固定部２３のＰ型半導体素子チップの露出面
は，両端面がちぐはぐに金属セグメント２２及び３０に
半田３１によって，Ｎ型半導体素チップ及びＰ型半導体
素子チップがＮ型，Ｐ型，Ｎ型と交互に，且つ電気的に
直列となるように接合されている。このようにして，熱
電気変換モジュール１が形成されている。As shown in FIG. 5, both ends of the element fixing portion 23 are shaped so as to be sandwiched between the metal segments 22 and 30 of the first joining portion 20 and the second joining portion 27, respectively. The exposed surface of the P-type semiconductor element chip of the element fixing portion 23 has N-type semiconductor element chip and P-type semiconductor element chip of N-type, P-type, N-type And are connected alternately and electrically in series. In this way, the thermoelectric conversion module 1 is formed.
【００２２】図６は，図５の熱電気変換モジュールの変
形例を示す図である。図６において，固定部２３のＰ型
及びＮ型半導体素子材の両端は，半田付３３により接合
され，Ｎ型，Ｐ型，Ｎ型，Ｐ型，…と電気的に直列とな
るように，形成されている。この両端の半田面は，絶縁
性の樹脂３２に埋設される。FIG. 6 is a diagram showing a modification of the thermoelectric conversion module of FIG. In FIG. 6, both ends of the P-type and N-type semiconductor element materials of the fixing portion 23 are joined by soldering 33 so as to be electrically in series with N-type, P-type, N-type, P-type ,. Has been formed. The solder surfaces at both ends are embedded in the insulating resin 32.
【００２３】図７（ａ），（ｂ）は本発明の他の実施例
に係る熱電気変換モジュールの金属セグメントを設けた
耐熱絶縁材を示す側面図及び正面図，図８（ａ），
（ｂ）は，図７（ａ），（ｂ）の熱電気変換モジュール
の素子固定部を示す側断面図及び正面図，図９（ａ），
（ｂ）は，図７（ａ），（ｂ）の熱電気変換モジュール
に金属セグメントを設けた耐熱絶縁平板を示す側面図及
び正面図である。7 (a) and 7 (b) are a side view and a front view showing a heat-resistant insulating material provided with metal segments of a thermoelectric conversion module according to another embodiment of the present invention, FIG. 8 (a),
FIG. 9B is a side sectional view and a front view showing the element fixing portion of the thermoelectric conversion module of FIGS. 7A and 7B, FIG.
7B is a side view and a front view showing a heat-resistant insulating flat plate provided with metal segments in the thermoelectric conversion module of FIGS. 7A and 7B.
【００２４】図７（ａ），（ｂ）において，第１接合部
３５は，四角の耐熱絶縁材３６表面に，金属セグメント
３７が接着剤３８を介して接合されている。In FIGS. 7A and 7B, the first joint portion 35 has a metal segment 37 joined to the surface of a square heat-resistant insulating material 36 with an adhesive 38.
【００２５】図８（ａ），（ｂ）において，素子固定部
３９は，各耐熱絶縁材４０ａ，４０ｂ…に夫々一列に設
けられた貫通孔４１ａ，４１ｂ…に，半導体素子材を挿
入し凝固固定して半導体素子チップを形成し，この耐熱
絶縁材を交互に側面同志を接着して構成されている。8 (a) and 8 (b), the element fixing portion 39 is formed by inserting the semiconductor element material into the through holes 41a, 41b ... Which are provided in a row in each heat resistant insulating material 40a, 40b. The semiconductor element chips are fixed and formed, and the heat-resistant insulating materials are alternately bonded to the side surfaces.
【００２６】図９（ａ），（ｂ）において，第２接合部
４４は，四角の耐熱絶縁材４５の一面に金属セグメント
４６が接着剤４７を介して接合されている。In FIGS. 9A and 9B, in the second joint portion 44, a metal segment 46 is joined to one surface of a square heat-resistant insulating material 45 with an adhesive 47.
【００２７】図１０は，図７（ａ），（ｂ），図８
（ａ），（ｂ），図９（ａ），（ｂ）に夫々示した第１
接合部３５，素子固定部３９，第２接合部４４から熱電
気変換モジュールを組み立てたときの図である。FIG. 10 shows FIGS. 7 (a), (b) and FIG.
(A), (b), the first shown in FIG. 9 (a), (b) respectively
It is a figure when a thermoelectric conversion module is assembled from the joining part 35, the element fixing part 39, and the 2nd joining part 44.
【００２８】図１０で示すように，素子固定部２３の両
端を，耐熱絶縁材に金属セグメントで半田接合して形成
されている。金属セグメントは，Ｎ型半導体素子及びＰ
型半導体素子が夫々１個又は２個がＮ型，Ｐ型，Ｎ型…
と電気的に直列となるような形状を有している。このよ
うにして，熱電気変換モジュール１ａ´が形成されてい
る。As shown in FIG. 10, both ends of the element fixing portion 23 are formed by soldering a heat-resistant insulating material with metal segments. The metal segment is composed of N-type semiconductor element and P
One or two type semiconductor elements are N type, P type, N type ...
Has a shape such that it is electrically connected in series. In this way, the thermoelectric conversion module 1a 'is formed.
【００２９】図１１は，図１０の熱電気変換モジュール
の変形例を示す断面図である。図１１で示すように，熱
電気変換モジュール１ｂは，素子固定部３９の両端を半
田３３で互い違いに固定して，電気的直列となるように
形成されている。FIG. 11 is a sectional view showing a modification of the thermoelectric conversion module of FIG. As shown in FIG. 11, the thermoelectric conversion module 1b is formed so that both ends of the element fixing portion 39 are alternately fixed by the solder 33 and are electrically connected in series.
【００３０】次に本発明の実施例に係る熱電気変換装置
の製造の具体例について説明する。Ｐ型及びＮ型半導体
素子材の製造は，参考文献１に記載された製法に従っ
た。即ち，表１で示すような，良く知られているＢｉ2
Ｔｅ3 系化合物を原料として，夫々１ｋｇ秤量して，石
英管中に真空封入し，高周波炉中で溶解，凝固させた鋳
塊を，石英管ルツボ中に第１多孔性耐熱絶縁材とともに
挿入し，この鋳塊を溶解し，孔の深さの方向に温度勾配
を持たせてゆっくり凝固させた。その後，凝固点直下
で，そして真空中で，４８時間熱処理することによっ
て，上記化合物を生成させた。この素子材チップの形状
は，第１多孔性耐熱絶縁体の孔形によって決定される。
得られた素子材の形状は，１×１×４（ｍｍ）である。
又，これらの素子材は，長手方向に結晶ｃ面をもち，こ
れにほぼ平行に成長している単結晶又は柱状晶であるこ
とをＸ線的に確かめた。それらのＰ型及びＮ型半導体素
子材を別々の第２，第３の耐熱絶縁体４１の孔４１ａの
中で夫々凝固させて，一方凝固したＰ型及びＮ型半導体
素子チップ４２，４３を形成し，図３（ａ），（ｂ），
図８（ａ），（ｂ）で示すように，熱電気変換モジュー
ル１ａ，１ａ´を形成した。この熱電気変換モジュール
を複数用意し，これらの間に低熱流（又は高熱流）伝達
管３を，そしてその両外側に高熱流（又は，低熱流）伝
達管２を配設する。これをシステム連結帯５で結合す
る。そして両熱電気変換モジュールの電極端子８，８を
電気的に直列に結合させた。尚，Ｎ型及びＰ型素子チッ
プの測定結果は次に表２の通りである。Next, a specific example of manufacturing the thermoelectric conversion device according to the embodiment of the present invention will be described. The P-type and N-type semiconductor element materials were manufactured according to the manufacturing method described in Reference 1. That is, as shown in Table 1, well-known Bi 2
Using Te 3 compounds as raw materials, 1 kg each was weighed, vacuum-sealed in a quartz tube, and the ingot melted and solidified in a high-frequency furnace was inserted into a quartz tube crucible together with the first porous heat-resistant insulating material. , The ingot was melted and slowly solidified with a temperature gradient in the depth direction of the hole. Then, the above compound was produced by heat treatment just below the freezing point and in vacuum for 48 hours. The shape of the element material chip is determined by the hole shape of the first porous heat resistant insulator.
The shape of the obtained element material is 1 × 1 × 4 (mm).
Further, it was confirmed by X-ray that these element materials were single crystals or columnar crystals having a crystal c-plane in the longitudinal direction and growing substantially parallel to the crystal c-plane. These P-type and N-type semiconductor element materials are solidified in the holes 41a of the second and third heat-resistant insulators 41, respectively, to form solidified P-type and N-type semiconductor element chips 42, 43. 3 (a), (b),
As shown in FIGS. 8A and 8B, thermoelectric conversion modules 1a and 1a 'were formed. A plurality of the thermoelectric conversion modules are prepared, a low heat flow (or high heat flow) transfer pipe 3 is arranged between them, and a high heat flow (or low heat flow) transfer pipe 2 is arranged on both outer sides thereof. These are connected by the system connecting band 5. Then, the electrode terminals 8 of both thermoelectric conversion modules were electrically connected in series. The measurement results of the N-type and P-type element chips are shown in Table 2 below.
【００３１】[0031]
【表１】 [Table 1]
【００３２】[0032]
【表２】 [Table 2]
【００３３】上記熱電気変換モジュールを熱電気変換装
置として組み立て作動させると，極めて良好に作動し
た。低熱流伝達管３内は，−１℃まで冷却された。周囲
の断熱構造完備すれば，もっと低温まで冷却すること
は，それ程難しくない。When the thermoelectric conversion module was assembled and operated as a thermoelectric conversion device, it worked extremely well. The inside of the low heat flow transfer pipe 3 was cooled to -1 ° C. It is not so difficult to cool to a lower temperature if the surrounding heat insulation structure is complete.
【００３４】以上，本発明の実施例で説明したように，
複数の孔を有する耐熱絶縁材の孔の中で，単結晶材又は
一方向性凝固材を成長させる構造を採ることによって，
その優れた単結晶の熱電特性を生かし，この耐熱絶縁材
の孔の内壁によって機械的強度に対して弱い半導体素子
チップの破壊を保護することを可能ならしめた。As described above in the embodiments of the present invention,
By adopting a structure in which a single crystal material or a unidirectionally solidified material is grown in a hole of a heat resistant insulating material having a plurality of holes,
Taking advantage of the excellent thermoelectric characteristics of the single crystal, the inner wall of the hole of this heat-resistant insulating material made it possible to protect the destruction of the semiconductor element chip, which is weak against mechanical strength.
【００３５】尚，本発明の実施例による熱電気変換装置
では，従来のモジュールの長所である複数個の小さな素
子チップを電気的に直列に結合して，高電圧での発電構
造はそのまま生かしている。In the thermoelectric converter according to the embodiment of the present invention, a plurality of small element chips, which are advantages of the conventional module, are electrically connected in series, and the high voltage power generation structure is used as it is. There is.
【００３６】[0036]
【発明の効果】以上，説明したように，本発明において
は，素子固定部を持つ新規モジュールを用いることによ
って，この種のモジュールの最大の弱点である機械的強
度の弱さに対する補強が可能になった。As described above, in the present invention, by using the novel module having the element fixing portion, it is possible to reinforce the weakness of the mechanical strength which is the greatest weak point of this type of module. became.
【００３７】また，本発明によれば，従来実用材料とし
ての実現し得なかった単結晶材モジュールの使用を上記
構造を採ることによって始めて実現可能ならしめた。Further, according to the present invention, the use of the single crystal material module, which could not be realized as a conventional practical material, can be realized only by adopting the above structure.
【００３８】更に，本発明によれば，システム連結帯
に，弾力性のある断熱材を使用することによって，外的
な衝撃圧，熱膨脹による熱歪み等の機械的剪断応力を吸
収させることも可能である。Further, according to the present invention, it is possible to absorb mechanical shear stress such as external impact pressure and thermal strain due to thermal expansion by using an elastic heat insulating material for the system connecting band. Is.
【図１】本発明の実施例に係る熱電気変換冷却装置の基
本ユニットの構成を示す部分断面図である。FIG. 1 is a partial cross-sectional view showing the configuration of a basic unit of a thermoelectric conversion cooling device according to an embodiment of the present invention.
【図２】（ａ），（ｂ）は金属セグメントが接合（又
は，接着）された耐熱絶縁材である第１接合部を示す側
面図及び正面図である。2A and 2B are a side view and a front view showing a first joint portion which is a heat-resistant insulating material in which metal segments are joined (or bonded).
【図３】（ａ），（ｂ）は素子固定部を示す側断面図及
び正面図である。3A and 3B are a side sectional view and a front view showing an element fixing portion.
【図４】（ａ），（ｂ）は金属セグメントが接合（又
は，接着）された耐熱絶縁材である第２接合部を示す側
面図及び正面図である。4 (a) and 4 (b) are a side view and a front view showing a second joint portion which is a heat resistant insulating material in which metal segments are joined (or bonded).
【図５】図２（ａ），（ｂ），図３（ａ），（ｂ），図
４（ａ），（ｂ）に夫々示した第１接合部，素子固定
部，第２接合部から熱電気変換モジュールを組み立てた
ときの図である。5A, 5B, 3A, 3B, 4A, and 4B are respectively the first joint portion, the element fixing portion, and the second joint portion. It is a figure when the thermoelectric conversion module is assembled.
【図６】図５の熱電気変換モジュールの変形例を示す図
である。6 is a diagram showing a modification of the thermoelectric conversion module of FIG.
【図７】（ａ），（ｂ）は本発明の他の実施例に係る熱
電気変換モジュールの金属セグメントを設けた耐熱絶縁
材を示す側面図及び正面図である。7 (a) and 7 (b) are a side view and a front view showing a heat-resistant insulating material provided with metal segments of a thermoelectric conversion module according to another embodiment of the present invention.
【図８】（ａ），（ｂ）は，図７（ａ），（ｂ）の熱電
気変換モジュールの素子固定部を示す側断面図及び正面
図である。8 (a) and 8 (b) are a side sectional view and a front view showing an element fixing portion of the thermoelectric conversion module of FIGS. 7 (a) and 7 (b).
【図９】（ａ），（ｂ）は，図７（ａ），（ｂ）の熱電
気変換モジュールに金属セグメントを設けた耐熱絶縁平
板を示す側面図及び正面図である。9 (a) and 9 (b) are a side view and a front view showing a heat-resistant insulating flat plate provided with metal segments on the thermoelectric conversion module of FIGS. 7 (a) and 7 (b).
【図１０】図７（ａ），（ｂ），図８（ａ），（ｂ），
図９（ａ），（ｂ）に夫々示した第１接合部３５，素子
固定部３８，第２接合部４３から熱電気変換モジュール
を組み立てたときの図である。FIG. 10 (a), (b), FIG. 8 (a), (b),
It is a figure when the thermoelectric conversion module was assembled from the 1st junction part 35, the element fixing | fixed part 38, and the 2nd junction part 43 which were each shown to FIG. 9 (a), (b).
【図１１】図１０の熱電気変換モジュールの変形例を示
す断面図である。11 is a cross-sectional view showing a modified example of the thermoelectric conversion module in FIG.
【図１２】従来例に係る熱電気変換モジュールを示す図
である。FIG. 12 is a view showing a thermoelectric conversion module according to a conventional example.
１ 熱電気変換モジュール １ａ 熱電気変換モジュール １ａ´ 熱電気変換モジュール １ｂ 熱電気変換モジュール １ｂ´ 熱電気変換モジュール ２ 高熱流伝達管 ３ 低熱流伝達管 ５ システム連結帯 ６，７ 断熱材 ２０，３５ 第１接合部 ２２，３０，３７，４６ 金属セグメント ２３，３９ 素子固定部 ２４，２８，４５ 耐熱絶縁材 ２４ａ 貫通孔 ２５ Ｎ型半導体素子チップ ２６ Ｐ型半導体素子チップ ２７，４４ 第２接合部 ２９，３１，３３ 半田層 ３２ 樹脂 1 thermoelectric conversion module 1a thermoelectric conversion module 1a 'thermoelectric conversion module 1b thermoelectric conversion module 1b' thermoelectric conversion module 2 high heat flow transfer tube 3 low heat flow transfer tube 5 system connection zone 6,7 heat insulating material 20,35th 1 joining part 22,30,37,46 metal segment 23,39 element fixing part 24,28,45 heat resistant insulating material 24a through hole 25 N type semiconductor element chip 26 P type semiconductor element chip 27,44 second joining section 29, 31, 33 Solder layer 32 Resin
Claims (3)
はＰ型半導体素子材が少なくとも隣り合う一対の半導体
素子チップがＮ型及びＰ型となるようにＮ，Ｐ，Ｎ，Ｐ
…の順で，両端を露出するように挿入された素子固定部
と，複数個の金属セグメントが配列し接合され，当該金
属セグメントを有する面を互いに対向させて，前記Ｎ型
又はＰ型半導体素子チップの夫々の両端を接続するよう
に，前記素子固定部を挟み込む第２及び第３耐熱性絶縁
材とを備えていることを特徴とする熱電気変換モジュー
ル。1. A N, P, N, P such that a pair of semiconductor element chips in which at least N-type or P-type semiconductor element materials are adjacent to each other in a plurality of through holes of the first heat resistant insulating material are N-type and P-type.
In this order, the element fixing part inserted so that both ends are exposed and a plurality of metal segments are arranged and joined, and the surfaces having the metal segments are made to face each other to form the N-type or P-type semiconductor element. A thermoelectric conversion module comprising: a second and a third heat resistant insulating material sandwiching the element fixing portion so as to connect both ends of each chip.
はＰ型半導体素子チップがＮ，Ｐ，Ｎ，Ｐ…の順で，両
端を露出するように挿入された素子固定部と，前記Ｎ型
又はＰ型半導体素子チップの両端同士を夫々接合する低
融点導電性接合材とを備えたことを特徴とする熱電気変
換モジュール。2. An element fixing part in which N-type or P-type semiconductor element chips are inserted into the plurality of through holes of the first heat-resistant insulating material in order of N, P, N, P ... , A low-melting point conductive bonding material for bonding both ends of the N-type or P-type semiconductor element chip to each other, respectively.
ールを複数と，前記複数の熱電気変換モジュール間に，
交互に配置される低熱流伝達管及び高熱流伝達管と，少
なくとも前記熱電気変換モジュールの夫々を覆うシステ
ム連結帯からなる基本ユニットを備えたことを特徴とす
る熱電気変換装置。3. A plurality of thermoelectric conversion modules according to claim 1 or 2, and between the plurality of thermoelectric conversion modules,
A thermoelectric conversion device comprising: a low heat flow transfer pipe and a high heat flow transfer pipe, which are alternately arranged, and a basic unit including a system connection band covering at least each of the thermoelectric conversion modules.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3290132A JPH05335630A (en) | 1991-11-06 | 1991-11-06 | Thermoelectric conversion module and thermoelectric conversion device using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3290132A JPH05335630A (en) | 1991-11-06 | 1991-11-06 | Thermoelectric conversion module and thermoelectric conversion device using it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05335630A true JPH05335630A (en) | 1993-12-17 |
Family
ID=17752212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3290132A Withdrawn JPH05335630A (en) | 1991-11-06 | 1991-11-06 | Thermoelectric conversion module and thermoelectric conversion device using it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05335630A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09293909A (en) * | 1996-02-26 | 1997-11-11 | Matsushita Electric Works Ltd | Thermoelectric module and method for manufacturing it |
| EP0827215A2 (en) * | 1996-08-27 | 1998-03-04 | Kubota Corporation | Thermoelectric modules and thermoelectric elements |
| WO1998022984A1 (en) * | 1996-11-15 | 1998-05-28 | Citizen Watch Co., Ltd. | Method of manufacturing thermionic element |
| WO1999007024A1 (en) * | 1997-08-01 | 1999-02-11 | Citizen Watch Co., Ltd. | Thermoelectric element and method for manufacturing the same |
| WO1999010937A1 (en) * | 1997-08-25 | 1999-03-04 | Citizen Watch Co., Ltd. | Thermoelectric device |
-
1991
- 1991-11-06 JP JP3290132A patent/JPH05335630A/en not_active Withdrawn
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09293909A (en) * | 1996-02-26 | 1997-11-11 | Matsushita Electric Works Ltd | Thermoelectric module and method for manufacturing it |
| EP0827215A2 (en) * | 1996-08-27 | 1998-03-04 | Kubota Corporation | Thermoelectric modules and thermoelectric elements |
| EP0827215A3 (en) * | 1996-08-27 | 2000-09-20 | Kubota Corporation | Thermoelectric modules and thermoelectric elements |
| WO1998022984A1 (en) * | 1996-11-15 | 1998-05-28 | Citizen Watch Co., Ltd. | Method of manufacturing thermionic element |
| US6232542B1 (en) | 1996-11-15 | 2001-05-15 | Citizen Watch Co., Ltd. | Method of fabricating thermoelectric device |
| US6441295B2 (en) | 1996-11-15 | 2002-08-27 | Citizen Watch Co. Ltd. | Method of fabricating thermoelectric device |
| US6441296B2 (en) | 1996-11-15 | 2002-08-27 | Citizen Watch Co., Ltd. | Method of fabricating thermoelectric device |
| WO1999007024A1 (en) * | 1997-08-01 | 1999-02-11 | Citizen Watch Co., Ltd. | Thermoelectric element and method for manufacturing the same |
| US6310383B1 (en) | 1997-08-01 | 2001-10-30 | Citizen Watch Co., Ltd. | Thermoelectric element and method for manufacturing the same |
| US6329217B1 (en) | 1997-08-01 | 2001-12-11 | Citizen Watch Co., Ltd. | Thermoelectric device and method of fabricating the same |
| WO1999010937A1 (en) * | 1997-08-25 | 1999-03-04 | Citizen Watch Co., Ltd. | Thermoelectric device |
| US6314741B1 (en) | 1997-08-25 | 2001-11-13 | Citizen Watch Co., Ltd. | Thermoelectric device |
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