JPH05326633A - Method and apparatus for mounting semiconductor chip - Google Patents
Method and apparatus for mounting semiconductor chipInfo
- Publication number
- JPH05326633A JPH05326633A JP12376192A JP12376192A JPH05326633A JP H05326633 A JPH05326633 A JP H05326633A JP 12376192 A JP12376192 A JP 12376192A JP 12376192 A JP12376192 A JP 12376192A JP H05326633 A JPH05326633 A JP H05326633A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- substrate
- mounting
- measuring
- distance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、Si−LSI、GaA
s−LSI、および液晶ディスプレイ(LCD)等の大
型半導体チップの実装方法および実装装置に関する。The present invention relates to Si-LSI and GaA.
The present invention relates to a mounting method and a mounting device for a large semiconductor chip such as an s-LSI and a liquid crystal display (LCD).
【0002】[0002]
【従来の技術】フリップチップの実装方法は、半導体チ
ップに設けられた全てのバンプを基板上のパッドに接続
して行う。このため、半導体チップと基板の平行度を保
つ技術が極めて重要である。このように半導体チップと
基板とを平行に保つための従来の技術としては、例えば
光学プローブを用いる方法がある。この方法は、半導体
チップおよび基板にプローブ光を照射し、その反射光を
測定することによって、両者の平行度を調整するもので
ある。2. Description of the Related Art A flip chip mounting method is performed by connecting all bumps provided on a semiconductor chip to pads on a substrate. For this reason, the technique of maintaining the parallelism between the semiconductor chip and the substrate is extremely important. As a conventional technique for keeping the semiconductor chip and the substrate parallel to each other as described above, there is a method using an optical probe, for example. In this method, the semiconductor chip and the substrate are irradiated with probe light, and the reflected light is measured to adjust the parallelism between them.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、近年の
半導体チップおよび基板の大型化によって、従来の調整
方法では半導体チップと基板とを平行に保つことが困難
になってきた。その原因として以下の2点が考えられ
る。第1に、従来の方法では平行度のずれを反射光の角
度のずれで検出していたが、この検出方法での誤差が大
きくなってきたためである。つまり、ある測定点での角
度のずれがわずかな場合でも、半導体チップおよび基板
の大型化に伴い、測定点から離れた部分での角度のずれ
が非常に大きくなるからである。第2に、基板がセラミ
ックの場合には、焼き物の特性として反りやうねりが存
在するが、基板の大型化に伴い、これらの反りやうねり
が無視できなくなってきたためである。However, due to the recent increase in the size of the semiconductor chip and the substrate, it has become difficult to keep the semiconductor chip and the substrate parallel to each other by the conventional adjusting method. The following two points can be considered as the cause. First, in the conventional method, the deviation of the parallelism was detected by the deviation of the angle of the reflected light, but the error in this detection method became large. That is, even if the angle deviation at a certain measurement point is slight, the angle deviation at a portion distant from the measurement point becomes very large as the semiconductor chip and the substrate become larger. Secondly, when the substrate is a ceramic, there are warps and undulations as characteristics of the baked product, but these warpages and undulations cannot be ignored as the size of the substrate increases.
【0004】本発明は、半導体チップおよび基板の大型
化によっても、半導体チップと基板とを十分に平行に保
ち、高い実装歩留りを確保することができる半導体チッ
プの実装方法および実装装置を提供することを目的とす
る。The present invention provides a semiconductor chip mounting method and a semiconductor chip mounting apparatus which can keep the semiconductor chip and the substrate sufficiently parallel to each other even when the size of the semiconductor chip and the substrate is increased, and ensure a high mounting yield. With the goal.
【0005】[0005]
【課題を解決するための手段】上記課題を解決するため
に、本発明の半導体実装方法は、基板表面の立体形状を
測定する第1のステップと、測定結果を基に基板と半導
体チップとの平行度を調整する第2のステップと、半導
体チップを実装する基板上の領域内の少なくとも3か所
の測定点で、半導体チップと基板間の距離を測定する第
3のステップと、測定した距離から基板と半導体チップ
との平行度を調整する第4のステップと、基板装着手段
と半導体チップ保持手段とを接近させて、基板上に半導
体チップを実装する第5のステップとを備える。In order to solve the above problems, the semiconductor mounting method of the present invention comprises a first step of measuring a three-dimensional shape of a substrate surface, and a substrate and a semiconductor chip based on the measurement result. A second step of adjusting the parallelism, a third step of measuring the distance between the semiconductor chip and the substrate at at least three measuring points in a region on the substrate on which the semiconductor chip is mounted, and the measured distance The fourth step of adjusting the parallelism between the substrate and the semiconductor chip and the fifth step of bringing the substrate mounting means and the semiconductor chip holding means close to each other to mount the semiconductor chip on the substrate.
【0006】また、本発明の半導体実装装置は、基板表
面の立体形状を測定し、かつ半導体チップを実装する基
板上の領域内の少なくとも3か所の測定点で、半導体チ
ップと基板間の距離を測定する測定手段と、測定手段で
の測定結果を基に基板と半導体チップとの平行度を調整
する調整手段とを備える。Further, the semiconductor mounting apparatus of the present invention measures the three-dimensional shape of the substrate surface and measures the distance between the semiconductor chip and the substrate at at least three measurement points within the region on the substrate on which the semiconductor chip is mounted. And a adjusting means for adjusting the parallelism between the substrate and the semiconductor chip based on the measurement result of the measuring means.
【0007】[0007]
【作用】本発明の半導体実装方法によれば、基板表面の
立体形状を測定し、この測定結果に基づいて基板と半導
体チップとの平行度を調整する。次に、半導体チップと
基板間の距離を、半導体チップを実装する基板上の領域
内の少なくとも3か所の測定点で測定する。この測定結
果に基づいて基板と半導体チップとの平行度を再調整す
る。以上の調整が終了した後に、基板装着手段と半導体
チップ保持手段とを接近させて、基板上に半導体チップ
を実装させる。According to the semiconductor mounting method of the present invention, the three-dimensional shape of the substrate surface is measured, and the parallelism between the substrate and the semiconductor chip is adjusted based on the measurement result. Next, the distance between the semiconductor chip and the substrate is measured at at least three measuring points in the area on the substrate on which the semiconductor chip is mounted. The parallelism between the substrate and the semiconductor chip is readjusted based on this measurement result. After the above adjustment is completed, the board mounting means and the semiconductor chip holding means are brought close to each other to mount the semiconductor chip on the board.
【0008】また、本発明の半導体チップ実装装置によ
れば、測定手段によって、基板表面の立体形状を測定す
る。測定手段での測定結果に基づいて、調整手段で基板
と半導体チップとの平行度を調整する。次に、測定手段
によって、半導体チップと基板間の距離を、半導体チッ
プを実装する基板上の領域内の少なくとも3か所の測定
点で測定する。測定手段での測定結果に基づいて、調整
手段で基板と半導体チップとの平行度を再調整する。以
上の調整が終了した後に、基板装着手段と半導体チップ
保持手段とを接近させて基板上に半導体チップを実装さ
せる。Further, according to the semiconductor chip mounting apparatus of the present invention, the three-dimensional shape of the substrate surface is measured by the measuring means. The adjusting means adjusts the parallelism between the substrate and the semiconductor chip based on the measurement result of the measuring means. Next, the distance between the semiconductor chip and the substrate is measured by the measuring means at at least three measuring points in the region on the substrate on which the semiconductor chip is mounted. Based on the measurement result of the measuring means, the parallelism between the substrate and the semiconductor chip is readjusted by the adjusting means. After the above adjustment is completed, the board mounting means and the semiconductor chip holding means are brought close to each other to mount the semiconductor chip on the board.
【0009】[0009]
【実施例】以下、本発明の一実施例について、添付図面
を参照しつつ説明する。図1は本実施例の半導体チップ
実装装置の構成を示す外観図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is an external view showing the configuration of the semiconductor chip mounting apparatus of this embodiment.
【0010】本実施例の半導体チップ実装装置には、半
導体チップ10が真空吸着により下面に装着された半導
体チップ装着部11と、基板12が真空吸着により上面
に装着された基板装着部13とを備え、半導体チップ装
着部11は枠体100の上部に、基板装着部13は枠体
100の下部に固定されている。半導体チップ装着部1
1と基板装着部13の間には、基板12表面の立体形状
を測定する距離センサ装置14が備えられている。半導
体チップ装着部11の側面部の直交する2つの面には、
半導体チップ10の上面と平行な方向の調整を行うアク
チュエータ11a、11bと、半導体チップ10の傾き
の調整を行うアクチュエータ11c、11dが備えられ
ている。距離センサ装置14には、基板12表面との距
離を測定するセンサ部14aと、センサ部14aを水平
な2次元方向に移動させるアーム部14bとが備えられ
ている。The semiconductor chip mounting apparatus of this embodiment includes a semiconductor chip mounting portion 11 on which the semiconductor chip 10 is mounted on the lower surface by vacuum suction and a substrate mounting portion 13 on which the substrate 12 is mounted on the upper surface by vacuum suction. The semiconductor chip mounting portion 11 is fixed to the upper portion of the frame body 100, and the substrate mounting portion 13 is fixed to the lower portion of the frame body 100. Semiconductor chip mounting part 1
A distance sensor device 14 that measures the three-dimensional shape of the surface of the substrate 12 is provided between the substrate 1 and the substrate mounting portion 13. On the two orthogonal sides of the side surface of the semiconductor chip mounting portion 11,
Actuators 11a and 11b for adjusting the direction parallel to the upper surface of the semiconductor chip 10 and actuators 11c and 11d for adjusting the inclination of the semiconductor chip 10 are provided. The distance sensor device 14 includes a sensor unit 14a that measures a distance from the surface of the substrate 12 and an arm unit 14b that moves the sensor unit 14a in a horizontal two-dimensional direction.
【0011】半導体チップ装着部11は半導体チップ1
0を吸着する吸着ブロック111と、この吸着ブロック
111が固定され揺動自在の揺動ステージ112と、こ
の揺動ステージ112が固定され水平な2次元方向に可
動な水平移動ステージ113とを有している。この水平
移動ステージ113の側面部の直交する2つの面には、
半導体チップ10の上面と平行な方向の調整を行うアク
チュエータ11a、11bが設けられ、揺動ステージ1
12の側面部の直交する2つの面には、半導体チップ1
0の傾きの調整を行うアクチュエータ11c、11dが
設けられている。The semiconductor chip mounting portion 11 is the semiconductor chip 1.
It has an adsorption block 111 for adsorbing 0, an oscillating stage 112 to which the adsorption block 111 is fixed, and an oscillating stage 112, and a horizontal moving stage 113 to which the oscillating stage 112 is fixed and movable in a horizontal two-dimensional direction. ing. On the two orthogonal surfaces of the side surface of the horizontal movement stage 113,
The swing stage 1 is provided with actuators 11a and 11b for adjusting the direction parallel to the upper surface of the semiconductor chip 10.
The semiconductor chip 1 is provided on the two orthogonal surfaces of the side surface portion of the semiconductor chip 1.
Actuators 11c and 11d for adjusting the inclination of 0 are provided.
【0012】基板装着部13は基板12を吸着する吸着
ブロック131と、この吸着ブロック131が固定され
てこれを上下動するボンディング機構部132と、この
ボンディング機構部132が固定され揺動自在の揺動ス
テージ133と、この揺動ステージ133が固定され水
平な2次元方向に可動な水平移動ステージ134とを有
している。水平移動ステージ134の側面部の直交する
2つの面には、基板12の上面と平行な方向の調整を行
うアクチュエータ13a、13bが設けられ、揺動ステ
ージ133の側面部の直交する2つの面には、基板12
の傾きの調整を行うアクチュエータ13c、13dが設
けられている。The substrate mounting portion 13 has a suction block 131 for sucking the substrate 12, a bonding mechanism section 132 for fixing the suction block 131 and moving the block up and down, and a swinging swing for fixing the bonding mechanism section 132. It has a moving stage 133 and a horizontal moving stage 134 to which the swinging stage 133 is fixed and movable in a horizontal two-dimensional direction. Actuators 13a and 13b for adjusting in a direction parallel to the upper surface of the substrate 12 are provided on the two orthogonal surfaces of the side surface of the horizontal movement stage 134, and the two orthogonal surfaces of the lateral surface of the swing stage 133 are provided. Is the substrate 12
Actuators 13c and 13d for adjusting the inclination of are provided.
【0013】さらに、半導体チップ実装装置には、半導
体チップ10と基板12の平行度を調整するコントロー
ラ15が備えられている。コントローラ15は距離セン
サ装置14からの測定結果のデータを入力し、このデー
タに基づいて、アクチュエータ11a〜11dおよびア
クチュエータ13a〜13dに対し必要な指令を出力し
ている。Further, the semiconductor chip mounting apparatus is provided with a controller 15 for adjusting the parallelism between the semiconductor chip 10 and the substrate 12. The controller 15 inputs the data of the measurement result from the distance sensor device 14, and outputs necessary commands to the actuators 11a to 11d and the actuators 13a to 13d based on this data.
【0014】距離センサ装置14は三角測量の原理を用
いて測定している。距離センサ装置14の測定原理を図
2に示す。距離センサ装置14は、半導体レーザ21の
スポット光を基板12表面上に照射して、その反射光を
半導***置検出器22の観測面22aに結像させてい
る。観測面22aに結像したスポット像の位置は、半導
体レーザ21と基板12表面との距離に比例する。つま
り、半導体レーザ21と基板12表面との距離がΔyだ
け変動すると、観測面22aのスポット像の位置がΔμ
だけ変化するのである。したがって、基板12表面を距
離センサ装置14からのスポット光で走査して、基板1
2表面の凹凸によって生じるスポット像の位置変化を半
導***置検出器22で測定することによって、基板12
表面の立体形状を求めることができる。The distance sensor device 14 measures using the principle of triangulation. The measurement principle of the distance sensor device 14 is shown in FIG. The distance sensor device 14 irradiates the surface light of the semiconductor laser 21 onto the surface of the substrate 12 and forms an image of the reflected light on the observation surface 22 a of the semiconductor position detector 22. The position of the spot image formed on the observation surface 22a is proportional to the distance between the semiconductor laser 21 and the surface of the substrate 12. That is, when the distance between the semiconductor laser 21 and the surface of the substrate 12 changes by Δy, the position of the spot image on the observation surface 22a changes by Δμ.
It only changes. Therefore, the surface of the substrate 12 is scanned with the spot light from the distance sensor device 14,
2 The position change of the spot image caused by the unevenness of the surface is measured by the semiconductor position detector 22,
The three-dimensional shape of the surface can be obtained.
【0015】次に、この半導体チップ実装装置を用いた
実装方法について、図3の斜視図を用いて説明する。ま
ず半導体チップ10を半導体チップ装着部11の吸着ブ
ロック111に吸引装着させ、基板12を基板装着部1
3の吸着ブロック131に吸引装着させる。そして、距
離センサ装置14を用いて、基板12表面を走査するこ
とにより、基板12表面の立体形状が測定できる。この
測定によって、基板12表面が平坦であるかの確認がで
きる。このような平坦性の確認が実装前に必要なのは、
第1に半導体チップ10と基板12の大型化によって表
面全体の平行度確保が困難となったため、第2に基板に
セラミックを用いた場合にその特質として反りやうねり
を有するためである。特に、図4(a)、(b)に示す
ように、PI(ポリイミド)/Cuなどの多層薄膜31
が表面に堆積されたAl2 O3 やAlNなどのセラミッ
ク基板32の場合には、反りやうねりが顕著となる。Next, a mounting method using this semiconductor chip mounting apparatus will be described with reference to the perspective view of FIG. First, the semiconductor chip 10 is suction mounted on the suction block 111 of the semiconductor chip mounting portion 11, and the substrate 12 is mounted on the substrate mounting portion 1.
The suction block 131 of No. 3 is attached by suction. Then, by scanning the surface of the substrate 12 using the distance sensor device 14, the three-dimensional shape of the surface of the substrate 12 can be measured. By this measurement, it can be confirmed whether the surface of the substrate 12 is flat. It is necessary to check such flatness before mounting.
Firstly, it is difficult to secure the parallelism of the entire surface due to the increase in size of the semiconductor chip 10 and the substrate 12, and secondly, when the substrate is made of ceramic, it has a warp or a swell. In particular, as shown in FIGS. 4A and 4B, a multilayer thin film 31 such as PI (polyimide) / Cu is formed.
In the case of a ceramic substrate 32 such as Al 2 O 3 or AlN deposited on the surface, warpage and undulation are significant.
【0016】基板12表面の立体形状の測定には、この
距離センサ装置14を用いた方法以外に次の方法があ
る。まずモアレ縞を用いる方法である。この方法は図5
に示すように、点光源41の照射光を格子フィルタ42
を通して、基板12の表面に投影する。基板12表面に
は、格子フィルタ42によって格子の影が投影される
が、基板12表面には凹凸があるので、部分的に曲がっ
た格子模様となる。この格子模様を、格子フィルタ42
を通してCCDカメラ43で観察すると、格子フィルタ
42でさらに格子模様の曲がりが拡大したモアレ縞が現
れる。このモアレ縞の格子幅から基板12の立体形状が
測定できる。For measuring the three-dimensional shape of the surface of the substrate 12, there are the following methods other than the method using the distance sensor device 14. First, the method using moire fringes. This method is shown in Figure 5.
As shown in FIG.
Through to project onto the surface of the substrate 12. Although the shadow of the grid is projected on the surface of the substrate 12 by the grid filter 42, since the surface of the substrate 12 has irregularities, it has a partially curved grid pattern. This grid pattern is used as a grid filter 42.
When observing with a CCD camera 43, the moire fringes in which the bending of the lattice pattern is further expanded appear in the lattice filter 42. The three-dimensional shape of the substrate 12 can be measured from the grid width of the moire fringes.
【0017】また、機械的に接触させる方法がある。こ
の方法は図6に示す座標測定機51を用いて、先端のフ
ィーラ(触針)52で基板12表面を走査することによ
り、基板12の立体形状を測定するものである。この場
合は、実装面にダメージを与えないために、基板12の
裏面を用いて測定を行う。There is also a method of mechanical contact. In this method, a coordinate measuring machine 51 shown in FIG. 6 is used to scan the surface of the substrate 12 with a feeler (stylus) 52 at the tip to measure the three-dimensional shape of the substrate 12. In this case, in order to prevent the mounting surface from being damaged, the back surface of the substrate 12 is used for the measurement.
【0018】さらに、傾き量を測定して、その値を積分
する方法がある。この方法は図7に示すように、平行度
測定装置60を用いて基板12表面を走査することによ
り、基板12表面全体の傾きを測定するものである。具
体的には、光源61の照射光をハーフミラー62で反射
させて、光学プローブ63に与える。この照射光を光学
プローブ63からプローブ光として基板12に照射し、
基板12からの反射光を半導***置検出器64で検出す
る。基板12の測定点が傾いている場合には、ずれた位
置で反射光が検出される。この検出値は基板12の傾き
量なので、この検出値を積分することにより基板12の
立体形状が算出できる。Further, there is a method of measuring the amount of inclination and integrating the value. In this method, as shown in FIG. 7, the parallelism measuring device 60 is used to scan the surface of the substrate 12 to measure the inclination of the entire surface of the substrate 12. Specifically, the irradiation light from the light source 61 is reflected by the half mirror 62 and given to the optical probe 63. The substrate 12 is irradiated with this irradiation light as probe light from the optical probe 63,
The semiconductor position detector 64 detects the reflected light from the substrate 12. When the measurement point of the substrate 12 is tilted, the reflected light is detected at the shifted position. Since this detected value is the amount of inclination of the substrate 12, the three-dimensional shape of the substrate 12 can be calculated by integrating this detected value.
【0019】光学プローブ63の測定原理を、図8を用
いて説明する。同図より、光源から平行に入射した入射
光A1 、B1 はライトガイド63aを通して反射鏡63
b、63cで反射し、半導体チップ10の下面と基板1
2の上面に照射する。そして、これらの照射光A2 、B
2 が半導体チップ10の下面と基板12の上面で反射し
て、反射鏡63b、63c介して出射する。これらの出
射光A3 、B3 の出射位置を、半導***置検出器64で
測定することによって、半導体チップ10の下面と基板
12の上面の角度のずれが判定できる。The measuring principle of the optical probe 63 will be described with reference to FIG. As shown in the figure, the incident lights A 1 and B 1 which are incident in parallel from the light source pass through the light guide 63a and are reflected by the reflecting mirror 63.
Reflected by b and 63c, the lower surface of the semiconductor chip 10 and the substrate 1
Irradiate the upper surface of 2. Then, these irradiation lights A 2 , B
2 is reflected by the lower surface of the semiconductor chip 10 and the upper surface of the substrate 12 and emitted through the reflecting mirrors 63b and 63c. By measuring the emission positions of these emission lights A 3 and B 3 with the semiconductor position detector 64, it is possible to determine the deviation of the angle between the lower surface of the semiconductor chip 10 and the upper surface of the substrate 12.
【0020】上記測定方法で測定した結果は、コントロ
ーラ15に与えられ、半導体チップ10と基板12との
平行度が検討される。コントローラ15による検討処理
の結果、半導体チップ10の角度調整が必要であると判
断した場合には、コントローラ15から半導体チップ装
着部11のアクチュエータ11c、11dに指令が送ら
れ、必要な角度調整が行われる。一方、基板12の角度
調整が必要であるとコントローラ15が判断した場合に
は、基板装着部13のアクチュレータ13c、13dに
指令が送られ、必要な角度調整が行われる。また、コン
トローラ15による検討処理の結果、基板12の立体形
状の測定値が平坦度の許容値よりも悪いと判断した場合
は、半導体チップ10の実装が中止となる。さらに、基
板12の測定値の内、半導体チップ10が搭載される領
域の測定値が上記許容値よりも悪いと判断された場合に
も、半導体チップ10の実装が中止となる。ここでの平
坦度の許容値は、複数の基板のそり量や凹凸部の変化量
に基づいて予め設定されている。The result measured by the above measuring method is given to the controller 15, and the parallelism between the semiconductor chip 10 and the substrate 12 is examined. As a result of the examination process by the controller 15, when it is determined that the angle adjustment of the semiconductor chip 10 is necessary, the controller 15 sends a command to the actuators 11c and 11d of the semiconductor chip mounting portion 11 to perform the necessary angle adjustment. Be seen. On the other hand, when the controller 15 determines that the angle adjustment of the board 12 is necessary, a command is sent to the actuators 13c and 13d of the board mounting portion 13 to perform the necessary angle adjustment. Further, as a result of the examination process by the controller 15, when it is determined that the measured value of the three-dimensional shape of the substrate 12 is worse than the flatness allowable value, the mounting of the semiconductor chip 10 is stopped. Further, even if it is determined that the measured value of the area on which the semiconductor chip 10 is mounted among the measured values of the substrate 12 is worse than the allowable value, the mounting of the semiconductor chip 10 is stopped. The allowable value of the flatness here is set in advance based on the warp amount of the plurality of substrates and the change amount of the uneven portion.
【0021】以上の調整によって、半導体チップ10と
基板12とを平行にすることができるが、より厳密な角
度調整が必要な場合には、次のいずれかの角度調整処理
を行えばよい。まず、第1の角度調整処理を図9
(a)、(b)を用いて説明する。第1の角度調整処理
は、距離センサ装置14を用いて、半導体チップ10を
実装する基板上の領域12aと半導体チップ10の距離
を領域12a内の所定の3か所の測定点12b〜12d
で測定する。距離センサ装置14による距離の測定方法
は、まず距離センサ装置14と基板12の距離を測定す
る。次に距離センサ装置14を上向きに反転させて、距
離センサ装置14と半導体チップの距離を測定する。測
定した2つの距離の合計から、半導体チップ10と基板
12の距離が判る。このように測定した、各測定点の測
定値はコントローラ15に与えられ、半導体チップ10
と基板12との平行度が検討される。この検討の結果、
半導体チップ10または基板12の角度調整が必要であ
るとコントローラ15が判断した場合には、アクチュエ
ータ11c、11dに指令が送られ、必要な角度調整が
行われる。さらに、基板12の角度調整が必要であると
コントローラ15が判定した場合には、基板装着部13
のアクチュエータ13c、13dに指令が送られ、必要
な角度調整が行われる。By the above adjustment, the semiconductor chip 10 and the substrate 12 can be made parallel to each other. However, if more strict angle adjustment is required, one of the following angle adjustment processes may be performed. First, the first angle adjustment process is shown in FIG.
This will be described with reference to (a) and (b). In the first angle adjustment processing, the distance sensor device 14 is used to determine the distance between the region 12a on the substrate on which the semiconductor chip 10 is mounted and the semiconductor chip 10 at three predetermined measurement points 12b to 12d in the region 12a.
To measure. In the method of measuring the distance by the distance sensor device 14, first, the distance between the distance sensor device 14 and the substrate 12 is measured. Next, the distance sensor device 14 is turned upside down and the distance between the distance sensor device 14 and the semiconductor chip is measured. From the total of the two measured distances, the distance between the semiconductor chip 10 and the substrate 12 can be known. The measured value at each measurement point measured in this way is given to the controller 15, and the semiconductor chip 10
And the parallelism between the substrate 12 and the substrate 12 is examined. As a result of this examination,
When the controller 15 determines that the angle adjustment of the semiconductor chip 10 or the substrate 12 is necessary, a command is sent to the actuators 11c and 11d, and the necessary angle adjustment is performed. Further, when the controller 15 determines that the angle of the board 12 needs to be adjusted, the board mounting portion 13
A command is sent to the actuators 13c and 13d, and the necessary angle adjustment is performed.
【0022】次に、第2の角度調整処理を図10
(a)、(b)を用いて説明する。第2の角度調整処理
は、距離センサ装置14を用いて、実装面が方形の半導
体チップ10を実装する基板上の領域12aと半導体チ
ップ10の距離を領域12a内の3か所の測定点12b
〜12dで測定する。測定点12b〜12dは、領域1
2aの4つの角の所定の3つの角に近接した点が選択さ
れる。各測定点の測定値はコントローラ15に与えら
れ、半導体チップ10と基板12との平行度が検討され
る。この検討の結果、半導体チップ10または基板12
の角度調整が必要であるとコントローラ15が判断した
場合には、アクチュエータ11c、11dに指令が送ら
れ、必要な角度調整が行われる。さらに、基板12の角
度調整が必要であるとコントローラ15が判定した場合
には、基板装着部13のアクチュエータ13c、13d
に指令が送られ、必要な角度調整が行われる。Next, the second angle adjustment processing is shown in FIG.
This will be described with reference to (a) and (b). In the second angle adjustment process, the distance sensor device 14 is used to measure the distance between the semiconductor chip 10 and the region 12a on the substrate on which the semiconductor chip 10 having a rectangular mounting surface is mounted, at three measurement points 12b in the region 12a.
Measure at ~ 12d. Measurement points 12b to 12d are in area 1
Points are selected which are close to the predetermined three corners of the four corners of 2a. The measured value at each measurement point is given to the controller 15, and the parallelism between the semiconductor chip 10 and the substrate 12 is examined. As a result of this examination, the semiconductor chip 10 or the substrate 12
When the controller 15 determines that the angle adjustment is required, the command is sent to the actuators 11c and 11d, and the necessary angle adjustment is performed. Further, when the controller 15 determines that the angle adjustment of the board 12 is necessary, the actuators 13c and 13d of the board mounting portion 13 are provided.
Command is sent to and the necessary angle adjustment is performed.
【0023】[0023]
【発明の効果】本発明の半導体実装方法であれば、基板
表面の立体形状を測定し、この測定結果に基づいて基板
と半導体チップとの平行度を調整する。次に、半導体チ
ップと基板間の距離を、半導体チップを実装する基板上
の領域内の少なくとも3か所の測定点で測定する。この
測定結果に基づいて基板と半導体チップとの平行度を再
調整する。以上の調整が終了した後に、基板装着手段と
半導体チップ保持手段とを接近させて、基板上に半導体
チップを実装させる。According to the semiconductor mounting method of the present invention, the three-dimensional shape of the substrate surface is measured, and the parallelism between the substrate and the semiconductor chip is adjusted based on the measurement result. Next, the distance between the semiconductor chip and the substrate is measured at at least three measuring points in the area on the substrate on which the semiconductor chip is mounted. The parallelism between the substrate and the semiconductor chip is readjusted based on this measurement result. After the above adjustment is completed, the board mounting means and the semiconductor chip holding means are brought close to each other to mount the semiconductor chip on the board.
【0024】また、本発明の半導体チップ実装装置であ
れば、測定手段によって、基板表面の立体形状を測定す
る。測定手段での測定結果に基づいて、調整手段で基板
と半導体チップとの平行度を調整する。次に、測定手段
によって、半導体チップと基板間の距離を、半導体チッ
プを実装する基板上の領域内の少なくとも3か所の測定
点で測定する。測定手段での測定結果に基づいて、調整
手段で基板と半導体チップとの平行度を再調整する。以
上の調整が終了した後に、基板装着手段と半導体チップ
保持手段とを接近させて基板上に半導体チップを実装さ
せる。In the semiconductor chip mounting apparatus of the present invention, the three-dimensional shape of the substrate surface is measured by the measuring means. The adjusting means adjusts the parallelism between the substrate and the semiconductor chip based on the measurement result of the measuring means. Next, the distance between the semiconductor chip and the substrate is measured by the measuring means at at least three measuring points in the region on the substrate on which the semiconductor chip is mounted. Based on the measurement result of the measuring means, the parallelism between the substrate and the semiconductor chip is readjusted by the adjusting means. After the above adjustment is completed, the board mounting means and the semiconductor chip holding means are brought close to each other to mount the semiconductor chip on the board.
【0025】このように本発明の半導体実装方法および
実装装置は、基板表面の立体形状を測定し、この測定結
果に基づいて基板と半導体チップとの平行度を調整して
いるので、半導体チップに設けられたの全てのバンプ
と、これらのバンプに相対する基板に設けられたパッド
とを接合することができる。このため、パンブとパッド
間の接触不良を防止でき、実装時の歩留りを向上させる
ことができる。As described above, the semiconductor mounting method and mounting apparatus of the present invention measure the three-dimensional shape of the surface of the substrate and adjust the parallelism between the substrate and the semiconductor chip based on the measurement result. All of the bumps provided and the pads provided on the substrate facing these bumps can be joined. Therefore, it is possible to prevent the contact failure between the bump and the pad and improve the yield at the time of mounting.
【図1】本実施例の半導体チップ実装装置の構成を示す
外観図である。FIG. 1 is an external view showing a configuration of a semiconductor chip mounting apparatus of this embodiment.
【図2】距離センサ装置の測定原理を示す斜視図であ
る。FIG. 2 is a perspective view showing a measurement principle of a distance sensor device.
【図3】半導体チップ実装装置を用いた実装方法を示す
斜視図である。FIG. 3 is a perspective view showing a mounting method using a semiconductor chip mounting apparatus.
【図4】反りやうねりを有するセラミック基板を示す断
面図である。FIG. 4 is a cross-sectional view showing a ceramic substrate having warpage and undulation.
【図5】立体形状の測定方法を示す平面図である。FIG. 5 is a plan view showing a method for measuring a three-dimensional shape.
【図6】立体形状の測定方法を示す平面図である。FIG. 6 is a plan view showing a method for measuring a three-dimensional shape.
【図7】立体形状の測定方法を示す平面図である。FIG. 7 is a plan view showing a method for measuring a three-dimensional shape.
【図8】光学プローブの測定原理を示す斜視図である。FIG. 8 is a perspective view showing the measurement principle of the optical probe.
【図9】第1の角度調整処理を示す平面図である。FIG. 9 is a plan view showing a first angle adjustment process.
【図10】第2の角度調整処理を示す平面図である。FIG. 10 is a plan view showing a second angle adjustment process.
10…半導体チップ、11…半導体チップ装着部、12
…基板、13…基板装着部、14…距離センサ装置、1
5…コントローラ。10 ... Semiconductor chip, 11 ... Semiconductor chip mounting portion, 12
... board, 13 ... board mounting portion, 14 ... distance sensor device, 1
5 ... Controller.
Claims (8)
導体チップ保持手段により前記基板の上部に保持された
半導体チップを実装する半導体チップ実装方法におい
て、 前記基板表面の立体形状を測定する第1のステップと、 測定結果を基に前記基板と前記半導体チップとの平行度
を調整する第2のステップと、 前記半導体チップを実装する前記基板上の領域内の少な
くとも3か所の測定点で、前記半導体チップと前記基板
間の距離を測定する第3のステップと、 測定した距離から前記基板と前記半導体チップとの平行
度を調整する第4のステップと、 前記基板装着手段と前記半導体チップ保持手段とを接近
させて、前記基板上に前記半導体チップを実装する第5
のステップとを備えることを特徴とする半導体チップ実
装方法。1. A semiconductor chip mounting method for mounting a semiconductor chip held on an upper portion of the substrate by a semiconductor chip holding means on a substrate fixed to the substrate mounting means, wherein a three-dimensional shape of the surface of the substrate is measured. 1 step, a second step of adjusting the parallelism between the substrate and the semiconductor chip based on the measurement result, and at least 3 measurement points in an area on the substrate where the semiconductor chip is mounted. A third step of measuring a distance between the semiconductor chip and the substrate, a fourth step of adjusting parallelism between the substrate and the semiconductor chip from the measured distance, the substrate mounting means and the semiconductor chip A fifth method for mounting the semiconductor chip on the substrate by bringing the holding means close to each other.
A semiconductor chip mounting method, comprising:
導体チップ保持手段により前記基板の上部に保持された
実装面が方形の半導体チップを実装する半導体チップ実
装方法において、 前記基板表面の立体形状を測定する第1のステップと、 測定結果を基に前記基板と前記半導体チップとの平行度
を調整する第2のステップと、 前記半導体チップを実装する前記基板上の方形領域の4
か所の角の内、所定の3か所の角にそれぞれ近接する当
該領域内の3か所の測定点で、前記半導体チップと前記
基板間の距離を測定する第3のステップと、 測定した距離から前記基板と前記半導体チップとの平行
度を調整する第4のステップと、 前記基板装着手段と前記半導体チップ保持手段とを接近
させて、前記基板上に前記半導体チップを実装する第5
のステップとを備えることを特徴とする半導体チップ実
装方法。2. A semiconductor chip mounting method for mounting a semiconductor chip, the mounting surface of which is held on the upper portion of the substrate by a semiconductor chip holding means and has a rectangular mounting surface, on a substrate fixed to the substrate mounting means, wherein the three-dimensional surface of the substrate is mounted. A first step of measuring the shape; a second step of adjusting the parallelism between the substrate and the semiconductor chip based on the measurement result; and a square area 4 on the substrate on which the semiconductor chip is mounted.
The third step of measuring the distance between the semiconductor chip and the substrate at three measurement points in the area, which are close to the predetermined three corners of the corners, respectively. A fourth step of adjusting the parallelism between the substrate and the semiconductor chip from a distance, and a fifth step of mounting the semiconductor chip on the substrate by bringing the substrate mounting means and the semiconductor chip holding means close to each other.
A semiconductor chip mounting method, comprising:
の平坦度が所定の許容値より悪い場合に、実装処理を中
止するステップを備えることを特徴とする請求項1また
は請求項2記載の半導体チップ実装方法。3. The method according to claim 1, further comprising a step of stopping the mounting process when the flatness of the three-dimensional shape measured in the first step is worse than a predetermined allowable value. Semiconductor chip mounting method.
いて、前記半導体チップを実装する前記基板上の領域の
立体形状の平坦度が所定の許容値より悪い場合に、実装
処理を中止するステップを備えることを特徴とする請求
項1または請求項2記載の半導体チップ実装方法。4. The mounting process is stopped when the flatness of the three-dimensional shape of the region on the substrate on which the semiconductor chip is mounted is worse than a predetermined allowable value based on the measurement result in the first step. The semiconductor chip mounting method according to claim 1 or 2, further comprising a step.
導体チップ保持手段により前記基板の上部に保持された
半導体チップを実装する半導体チップ実装装置におい
て、 前記基板表面の立体形状を測定し、かつ前記半導体チッ
プを実装する前記基板上の領域内の少なくとも3か所の
測定点で、前記半導体チップと前記基板間の距離を測定
する測定手段と、 前記測定手段での測定結果を基に前記基板と前記半導体
チップとの平行度を調整する調整手段とを備えることを
特徴とする半導体チップ実装装置。5. A semiconductor chip mounting apparatus for mounting a semiconductor chip held on an upper part of the substrate by a semiconductor chip holding unit on a substrate fixed to a substrate mounting unit, measuring a three-dimensional shape of the substrate surface, And, at least at three measuring points in the area on the substrate on which the semiconductor chip is mounted, measuring means for measuring the distance between the semiconductor chip and the substrate, and the measuring result by the measuring means. A semiconductor chip mounting apparatus comprising: an adjusting unit that adjusts the parallelism between a substrate and the semiconductor chip.
導体チップ保持手段により前記基板の上部に保持された
半導体チップを実装する半導体チップ実装装置におい
て、 前記基板表面の立体形状を測定し、かつ前記半導体チッ
プを実装する前記基板上の方形領域の4か所の角の内、
所定の3か所の角にそれぞれ近接する当該領域内の3か
所の測定点で、前記半導体チップと前記基板間の距離を
測定する測定手段と、 前記測定手段での測定結果を基に前記基板と前記半導体
チップとの平行度を調整する調整手段とを備えることを
特徴とする半導体チップ実装装置。6. A semiconductor chip mounting apparatus for mounting a semiconductor chip held on an upper part of the substrate by a semiconductor chip holding unit on a substrate fixed to the substrate mounting unit, measuring a three-dimensional shape of the substrate surface, And among the four corners of the rectangular area on the substrate on which the semiconductor chip is mounted,
Measuring means for measuring the distance between the semiconductor chip and the substrate at three measuring points in the region respectively close to three predetermined corners, and the measuring means for measuring the distance based on the measurement result by the measuring means. A semiconductor chip mounting apparatus comprising: an adjusting unit that adjusts the parallelism between a substrate and the semiconductor chip.
度が所定の許容値より悪い場合に、実装処理を中止する
実装中止手段を備えることを特徴とする請求項5または
請求項6記載の半導体チップ実装装置。7. The mounting stopping means for stopping the mounting processing when the flatness of the three-dimensional shape measured by the measuring means is worse than a predetermined allowable value, and the mounting stopping means is provided. Semiconductor chip mounting equipment.
前記半導体チップを実装する前記基板上の領域の立体形
状の平坦度が所定の許容値より悪い場合に、実装処理を
中止する実装中止手段を備えることを特徴とする請求項
5または請求項6記載の半導体チップ実装装置。8. Based on the measurement result by the measuring means,
7. The mounting stopping means for stopping the mounting process when the flatness of the three-dimensional shape of the area on the substrate on which the semiconductor chip is mounted is worse than a predetermined allowable value. Semiconductor chip mounting device.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12376192A JPH05326633A (en) | 1992-05-15 | 1992-05-15 | Method and apparatus for mounting semiconductor chip |
TW082103249A TW278212B (en) | 1992-05-06 | 1993-04-27 | |
AU38208/93A AU654775B2 (en) | 1992-05-06 | 1993-04-28 | Semiconductor chip mounting method and apparatus |
CA002095171A CA2095171A1 (en) | 1992-05-06 | 1993-04-29 | Semiconductor chip mounting method and apparatus |
US08/056,777 US5324381A (en) | 1992-05-06 | 1993-05-04 | Semiconductor chip mounting method and apparatus |
EP93107357A EP0569011A1 (en) | 1992-05-06 | 1993-05-06 | Semiconductor chip mounting method and apparatus |
KR1019930007722A KR930024128A (en) | 1992-05-06 | 1993-05-06 | Semiconductor chip mounting method and device |
US08/205,416 US5384000A (en) | 1992-05-06 | 1994-03-03 | Semiconductor chip mounting method and apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12376192A JPH05326633A (en) | 1992-05-15 | 1992-05-15 | Method and apparatus for mounting semiconductor chip |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05326633A true JPH05326633A (en) | 1993-12-10 |
Family
ID=14868633
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12376192A Pending JPH05326633A (en) | 1992-05-06 | 1992-05-15 | Method and apparatus for mounting semiconductor chip |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05326633A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009010074A (en) * | 2007-06-27 | 2009-01-15 | Shinko Electric Ind Co Ltd | Electronic component mounting device and manufacturing method of electronic device |
JP2009139175A (en) * | 2007-12-05 | 2009-06-25 | Denso Corp | Parallel mirror device and method of manufacturing the same |
JP2009200117A (en) * | 2008-02-19 | 2009-09-03 | Nikon Corp | Bonding device and manufacturing method |
-
1992
- 1992-05-15 JP JP12376192A patent/JPH05326633A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009010074A (en) * | 2007-06-27 | 2009-01-15 | Shinko Electric Ind Co Ltd | Electronic component mounting device and manufacturing method of electronic device |
JP2009139175A (en) * | 2007-12-05 | 2009-06-25 | Denso Corp | Parallel mirror device and method of manufacturing the same |
JP2009200117A (en) * | 2008-02-19 | 2009-09-03 | Nikon Corp | Bonding device and manufacturing method |
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