JPH05306458A - Wafer treatment device - Google Patents
Wafer treatment deviceInfo
- Publication number
- JPH05306458A JPH05306458A JP13806892A JP13806892A JPH05306458A JP H05306458 A JPH05306458 A JP H05306458A JP 13806892 A JP13806892 A JP 13806892A JP 13806892 A JP13806892 A JP 13806892A JP H05306458 A JPH05306458 A JP H05306458A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- sample table
- processed
- sample base
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、真空中又は減圧雰囲
気中にて半導体ウエハ等のウエハの処理中に加熱を行な
うウエハ処理装置に関し、特に中央部がわずかに***す
るよう球面状に加工した試料台上面にウエハ周辺部を押
しつけて固定した状態で加熱を行なうことによりウエハ
温度の安定性を向上させるようにしたものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer processing apparatus that heats a semiconductor wafer or the like during processing in a vacuum or a reduced pressure atmosphere, and in particular, it is processed into a spherical shape so that its central portion is slightly raised. By heating the peripheral portion of the wafer against the upper surface of the sample table while fixing the peripheral portion, the stability of the wafer temperature is improved.
【０００２】[0002]
【従来の技術】従来、シリコンウエハ等の半導体ウエハ
にスパッタリング等の処理を施すウエハ処理装置にあっ
ては、処理中にウエハを加熱することが多い。このよう
な加熱に用いられる加熱手段としては、図３に示すよう
に保持具１で保持されたウエハ２を、ランプ、抵抗線ヒ
ータ等の熱源３により裏側から非接触で加熱するものが
提案されている。2. Description of the Related Art Conventionally, in a wafer processing apparatus for performing processing such as sputtering on a semiconductor wafer such as a silicon wafer, the wafer is often heated during the processing. As a heating means used for such heating, there is proposed one that heats the wafer 2 held by the holder 1 from the back side in a non-contact manner by a heat source 3 such as a lamp or a resistance wire heater as shown in FIG. ing.
【０００３】[0003]
【発明が解決しようとする課題】上記した加熱手段によ
ると、ウエハ温度を安定に制御するのが困難である。そ
の理由は、次の通りである。According to the above heating means, it is difficult to stably control the wafer temperature. The reason is as follows.
【０００４】（イ）ランプ又はヒータに投入する電力に
よって温度制御を行なうことになるが、電力とウエハ温
度との関係は一義的に決まらない。一般には、その相関
関係を予めとっておき、再現性に期待するという方法を
とるが、スパッタリング、エッチング等のようにプロセ
ス中に温度変化をもたらすものについては誤差が大きく
なる。(A) Although the temperature is controlled by the electric power supplied to the lamp or the heater, the relationship between the electric power and the wafer temperature is not uniquely determined. Generally, a method of obtaining the correlation beforehand and expecting the reproducibility is adopted, but an error becomes large with respect to those such as sputtering and etching that cause a temperature change during the process.
【０００５】（ロ）ウエハ温度を熱電対、赤外線温度計
等のセンサでモニタし、投入電力を制御すればよさそう
に思われるが、一般に真空中では放熱が悪いので、前記
のようなプロセス中の温度変化（特に温度上昇）を打消
すように制御するのは容易でない。(B) It seems that it would be better to monitor the wafer temperature with a sensor such as a thermocouple or an infrared thermometer and control the input power, but in general, heat dissipation is poor in a vacuum, so during the above process. It is not easy to control so as to cancel the temperature change (especially temperature rise).
【０００６】上記のような困難を解消する方策として
は、図４に示すようにヒータ５を有するヒータブロック
４等の大きな熱浴にウエハ２を接触させ、常に熱浴との
熱平衡を実現させるものが考えられる。しかし、ウエハ
２をヒータブロック４上に単に載置するだけでは、ウエ
ハ２のそり等によりウエハ２とヒータブロック４との間
に微小な隙間が生じ、ウエハ内及びウエハ間で温度がば
らつくおそれがある。As a measure to solve the above-mentioned difficulties, the wafer 2 is brought into contact with a large heat bath such as a heater block 4 having a heater 5 as shown in FIG. 4 so that thermal equilibrium with the heat bath is always realized. Can be considered. However, if the wafer 2 is simply placed on the heater block 4, a minute gap may be generated between the wafer 2 and the heater block 4 due to the warp of the wafer 2 or the like, and the temperature may vary within the wafer or between the wafers. is there.
【０００７】このような温度ばらつきをなくすには、密
着露光用アライナ等で用いられている密着技術の採用が
考えられる。すなわち、図５に示すようにヒータブロッ
ク４のウエハ載置部に真空吸引路６を設け、ウエハ２を
真空チャックの原理でウエハ載置部に密着させる。しか
し、真空状態又は減圧状態に排気される処理室内では大
気圧がそのまま作用しないので、図５の対策は有効でな
い。また、ウエハ２を上方から全面的に押圧する機構を
設けることも考えられるが、これではウエハ表面にスパ
ッタリング等の処理を施すことができない不都合があ
る。In order to eliminate such temperature variations, it is conceivable to adopt the contact technique used in aligners for contact exposure. That is, as shown in FIG. 5, a vacuum suction path 6 is provided in the wafer mounting portion of the heater block 4, and the wafer 2 is brought into close contact with the wafer mounting portion on the principle of the vacuum chuck. However, since the atmospheric pressure does not act as it is in the processing chamber that is evacuated to a vacuum state or a reduced pressure state, the measure in FIG. 5 is not effective. It is also possible to provide a mechanism for pressing the wafer 2 entirely from above, but this has the disadvantage that the surface of the wafer cannot be subjected to processing such as sputtering.
【０００８】この発明の目的は、真空中又は減圧雰囲気
中にてウエハを処理する際にウエハを安定した温度で加
熱することができる新規なウエハ処理装置を提供するこ
とにある。An object of the present invention is to provide a novel wafer processing apparatus capable of heating a wafer at a stable temperature when processing the wafer in a vacuum or a reduced pressure atmosphere.
【０００９】[0009]
【課題を解決するための手段】この発明は、真空状態又
は減圧状態になるように排気される処理室内に、加熱手
段を有し且つ被処理ウエハを保持する試料台を設け、該
加熱手段により該試料台を介して該被処理ウエハを加熱
しつつ該被処理ウエハに所望の処理を施すようにしたウ
エハ処理装置において、前記試料台のウエハ保持面を周
辺部より中央部がわずかに上方に***するように加工し
ておく一方、前記試料台のウエハ保持面に前記被処理ウ
エハを載置した状態でウエハ周辺部を該ウエハ保持面に
押し付けて固定する固定手段を設けたことを特徴とする
ものである。According to the present invention, a sample stage having a heating means and holding a wafer to be processed is provided in a processing chamber which is evacuated to a vacuum state or a reduced pressure state, and the heating means is provided. In a wafer processing apparatus that heats the wafer to be processed through the sample table and performs a desired process on the wafer to be processed, the wafer holding surface of the sample table is slightly higher in the central portion than in the peripheral portion. While being processed so as to be raised, a fixing means is provided for pressing and fixing the peripheral portion of the wafer on the wafer holding surface of the sample stage while the wafer to be processed is placed on the wafer holding surface. To do.
【００１０】[0010]
【作用】この発明の構成によれば、中央部が周辺部より
わずかに上方に***するように加工したウエハ保持面に
被処理ウエハを載置し、固定手段によりウエハ周辺部を
ウエハ保持面に押し付けて固定するようにしたので、ウ
エハは試料台に全面的に密に接触するようになり、試料
台とウエハの間の熱平衡は良好となる。従って、試料台
の温度を希望する温度に制御することで安定したウエハ
温度を維持することができる。According to the structure of the present invention, the wafer to be processed is placed on the wafer holding surface which is processed so that the central portion thereof is slightly raised above the peripheral portion, and the peripheral portion of the wafer is fixed to the wafer holding surface by the fixing means. Since the wafer is pressed and fixed, the wafer comes into close contact with the sample table over the entire surface, and the thermal equilibrium between the sample table and the wafer becomes good. Therefore, a stable wafer temperature can be maintained by controlling the temperature of the sample table to a desired temperature.
【００１１】また、ウエハ保持面に押し付けるのは、ウ
エハ周辺部であるので、ウエハの大部分については、ス
パッタリング、ドライエッチング、ＣＶＤ（ケミカル・
ベーパー・デポジション）等の処理を施すのに何の支障
もない。Further, since it is the peripheral portion of the wafer that is pressed against the wafer holding surface, most of the wafer is subjected to sputtering, dry etching, CVD (chemical
There is no problem in carrying out processing such as vapor deposition.
【００１２】[0012]
【実施例】図１は、この発明の一実施例によるウエハ処
理装置を示すものである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT FIG. 1 shows a wafer processing apparatus according to an embodiment of the present invention.
【００１３】処理室１０は、排気管１０Ａを介して排気
系１２により真空状態又は減圧状態に排気されるもの
で、必要に応じて反応ガス等を供給する給気管１８Ｂが
設けられていてもよい。処理室１０内では、スパッタリ
ング、ドライエッチング、ＣＶＤ等の処理が行なわれる
が、このような処理を行なうための手段については図示
を省略してある。The processing chamber 10 is evacuated to a vacuum state or a reduced pressure state by an exhaust system 12 via an exhaust pipe 10A, and an air supply pipe 18B for supplying a reaction gas or the like may be provided if necessary. .. Processing such as sputtering, dry etching, and CVD is carried out in the processing chamber 10, but the means for carrying out such processing is not shown.
【００１４】処理室１０の底部には、ヒータ１６及び温
度センサ１８を内蔵したヒータブロックからなる試料台
１４が設けられている。電力制御装置２０は、ヒータ１
６への供給電力を制御するもので、温度センサ１８で検
知する温度が目標温度に等しくなるように電力制御を行
なうことができる。At the bottom of the processing chamber 10, there is provided a sample table 14 composed of a heater block containing a heater 16 and a temperature sensor 18. The power control device 20 includes the heater 1
The power supplied to the temperature sensor 6 is controlled, and the power can be controlled so that the temperature detected by the temperature sensor 18 becomes equal to the target temperature.
【００１５】試料台１４は、熱伝導のよい金属、例えば
Ａｌ又はＡｌ合金からなるもので、その上面は、周辺部
より中央部がわずかに上方に***するように、好ましく
は球面状に加工されている。このような球面状の加工
は、試料台１４の上面に被処理ウエハ２２を載置してウ
エハ周辺部を試料台上面に押し付けることでウエハ裏面
を試料台上面に密に接触させるのを可能にするためであ
る。The sample table 14 is made of a metal having good heat conductivity, for example, Al or Al alloy, and its upper surface is preferably processed into a spherical shape so that the central portion is slightly elevated above the peripheral portion. ing. Such spherical processing makes it possible to place the wafer 22 to be processed on the upper surface of the sample table 14 and press the peripheral portion of the wafer against the upper surface of the sample table to bring the back surface of the wafer into close contact with the upper surface of the sample table. This is because
【００１６】ウエハ２２の周辺部を試料台上面に押し付
けて固定するため、クランプリング２４が使用される。
試料台１４の側部には、クランプリング２４を係止する
ための係止リング２６が設けられている。A clamp ring 24 is used to press and fix the peripheral portion of the wafer 22 against the upper surface of the sample table.
A locking ring 26 for locking the clamp ring 24 is provided on the side of the sample table 14.
【００１７】試料台１４の上面にウエハ２２を載置した
状態で図２に示すようにウエハ２２にクランプリング２
４をかぶせ、試料台１４に押し付け、係止リング２６に
係止させることによりウエハ裏面を試料台上面に密に接
触させた状態でウエハ固定を行なうことができる。With the wafer 22 placed on the upper surface of the sample table 14, the clamp ring 2 is attached to the wafer 22 as shown in FIG.
4 is covered, pressed against the sample table 14, and locked by the locking ring 26, the wafer can be fixed while the back surface of the wafer is in close contact with the upper surface of the sample table.
【００１８】ウエハ２２としては、例えばシリコンウエ
ハを用いることができる。シリコンウエハは、平坦性が
極めて良好で、例えば直径１５０［ｍｍ］のものではそ
りが３０［μｍ］以下である。従って、試料台１４とし
て直径１５０［ｍｍ］のものを用い、その上面を中央部
が周辺部より５０［μｍ］程度***するように球面状に
研磨すれば、ウエハ周辺部をクランプリング２４で押え
ることでウエハ裏面を試料台上面に密着させることがで
きる。すなわち、シリコンウエハは、適度の弾性を有す
るので、前述のように中央部が***した球面状の試料台
上面に押えつけても、破壊したり、塑性変形したりする
ことがなく、裏面全体が試料台上面に密着するようにな
る。As the wafer 22, for example, a silicon wafer can be used. A silicon wafer has extremely good flatness, and for example, a wafer having a diameter of 150 [mm] has a warp of 30 [μm] or less. Therefore, if a sample table 14 having a diameter of 150 [mm] is used and the upper surface of the sample table 14 is polished spherically so that the central part is raised by about 50 [μm] from the peripheral part, the peripheral part of the wafer is pressed by the clamp ring 24. This allows the back surface of the wafer to be in close contact with the top surface of the sample table. That is, since the silicon wafer has an appropriate elasticity, even if the silicon wafer is pressed against the upper surface of the spherical sample stand whose central portion is raised as described above, it is not broken or plastically deformed, and the entire back surface is It comes into close contact with the upper surface of the sample table.
【００１９】従って、ウエハ２２と試料台１４との間に
は良好な熱平衡が実現されるので、試料台１４の温度を
所望の温度に制御していればよく、プロセス中のウエハ
温度変化の影響も無視できる。Therefore, since a good thermal equilibrium is realized between the wafer 22 and the sample stage 14, it is sufficient to control the temperature of the sample stage 14 to a desired temperature, and the influence of the wafer temperature change during the process. Can be ignored.
【００２０】[0020]
【発明の効果】以上のように、この発明によれば、加熱
手段を有する試料台において上面を中央部がわずかに上
方に***するように球面状に加工しておき、被処理ウエ
ハを試料台上面に載置した状態でウエハ周辺部を試料台
上面に押し付けて固定しつつ加熱を行なうようにしたの
で、ウエハ温度の安定性が向上すると共にウエハ温度の
精密な制御が可能となり、スパッタリング、ドライエッ
チング、ＣＶＤ等の処理の歩留りが大幅に向上する効果
が得られるものである。As described above, according to the present invention, in the sample stage having the heating means, the upper surface is processed into a spherical shape so that the central portion is slightly raised, and the wafer to be processed is processed into the sample stage. Since the wafer periphery is pressed against and fixed to the upper surface of the sample table while it is placed on the upper surface, heating is performed while the stability of the wafer temperature is improved and precise control of the wafer temperature becomes possible, and sputtering and dry The yield of the processing such as etching and CVD is significantly improved.
【図１】 この発明の一実施例によるウエハ処理装置を
示す断面図である。FIG. 1 is a sectional view showing a wafer processing apparatus according to an embodiment of the present invention.
【図２】 ウエハの固定状態を示す上面図である。FIG. 2 is a top view showing a fixed state of a wafer.
【図３】 従来のウエハ加熱手段を示す断面図である。FIG. 3 is a sectional view showing a conventional wafer heating means.
【図４】及びFIG. 4 and
【図５】 ウエハ加熱手段の異なる例をそれぞれ示す断
面図である。FIG. 5 is a sectional view showing a different example of the wafer heating means.
１０：処理室、１２：排気系、１４：試料台、１６：ヒ
ータ、１８：温度センサ、２０：電力制御装置、２２：
被処理ウエハ、２４：クランプリング、２６：係止リン
グ。10: processing chamber, 12: exhaust system, 14: sample stage, 16: heater, 18: temperature sensor, 20: power control device, 22:
Wafer to be processed, 24: clamp ring, 26: locking ring.
Claims (1)
される処理室内に、加熱手段を有し且つ被処理ウエハを
保持する試料台を設け、該加熱手段により該試料台を介
して該被処理ウエハを加熱しつつ該被処理ウエハに所望
の処理を施すようにしたウエハ処理装置において、 前記試料台のウエハ保持面を周辺部より中央部がわずか
に上方に***するように加工しておく一方、前記試料台
のウエハ保持面に前記被処理ウエハを載置した状態でウ
エハ周辺部を該ウエハ保持面に押し付けて固定する固定
手段を設けたことを特徴とするウエハ処理装置。1. A sample table having a heating means and holding a wafer to be processed is provided in a processing chamber which is evacuated to a vacuum state or a reduced pressure state, and the heating means causes the sample table to pass through the sample table. In a wafer processing apparatus in which a desired wafer is subjected to desired processing while heating the wafer to be processed, a wafer holding surface of the sample table is processed so that a central portion thereof is slightly elevated above a peripheral portion thereof. On the other hand, the wafer processing apparatus is provided with a fixing means for pressing and fixing the peripheral portion of the wafer on the wafer holding surface of the sample stage while the wafer to be processed is placed on the wafer holding surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13806892A JPH05306458A (en) | 1992-04-30 | 1992-04-30 | Wafer treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13806892A JPH05306458A (en) | 1992-04-30 | 1992-04-30 | Wafer treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05306458A true JPH05306458A (en) | 1993-11-19 |
Family
ID=15213225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13806892A Pending JPH05306458A (en) | 1992-04-30 | 1992-04-30 | Wafer treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05306458A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006093194A (en) * | 2004-09-21 | 2006-04-06 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| KR20150140562A (en) | 2014-06-06 | 2015-12-16 | 캐논 톡키 가부시키가이샤 | Film-forming apparatus |
-
1992
- 1992-04-30 JP JP13806892A patent/JPH05306458A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006093194A (en) * | 2004-09-21 | 2006-04-06 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| JP4555647B2 (en) * | 2004-09-21 | 2010-10-06 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, temperature control method |
| KR20150140562A (en) | 2014-06-06 | 2015-12-16 | 캐논 톡키 가부시키가이샤 | Film-forming apparatus |
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