JPH07302785A - Apparatus for treatment of substrate and control of substrate temperature - Google Patents
Apparatus for treatment of substrate and control of substrate temperatureInfo
- Publication number
- JPH07302785A JPH07302785A JP9475594A JP9475594A JPH07302785A JP H07302785 A JPH07302785 A JP H07302785A JP 9475594 A JP9475594 A JP 9475594A JP 9475594 A JP9475594 A JP 9475594A JP H07302785 A JPH07302785 A JP H07302785A
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- substrate
- temperature
- gas
- stage
- processed
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- Drying Of Semiconductors (AREA)
- Control Of Temperature (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置の製造プロセ
スにおいて, 被処理基板にドライエッチングや気相成長
(CVD) 等の処理を行う基板処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is applied to dry etching or vapor phase growth on a substrate to be processed in a semiconductor device manufacturing process.
The present invention relates to a substrate processing apparatus that performs processing such as (CVD).
【０００２】[0002]
【従来の技術】半導体装置の製造プロセスにおけるドラ
イエッチングや気相成長等の技術はガスまたはガスのプ
ラズマと被処理基板表面との化学反応を利用しているた
め，良好なエッチングあるいは堆積を得るためには，被
処理基板の温度制御が重要である。2. Description of the Related Art Techniques such as dry etching and vapor phase growth in a semiconductor device manufacturing process utilize a chemical reaction between a gas or a plasma of a gas and a surface of a substrate to be processed. For this reason, temperature control of the substrate to be processed is important.
【０００３】被処理基板の温度を変化させる例として，
例えばドライエッチングにおいては，シリコン(Si)基板
を−100 ℃以下に冷却してエッチングすることにより,
高エッチングレートを保ったままで垂直な加工形状の達
成が可能なことや, また，反対に被処理基板を 300℃以
上に加熱すると, 室温ではエッチングが困難な銅(Cu)の
加工を可能とすることが開示されている。As an example of changing the temperature of the substrate to be processed,
For example, in dry etching, by cooling the silicon (Si) substrate to -100 ° C or lower and etching it,
It is possible to achieve a vertical processing shape while maintaining a high etching rate, and conversely, if the substrate to be processed is heated to 300 ° C or higher, processing of copper (Cu), which is difficult to etch at room temperature, becomes possible. It is disclosed.
【０００４】これらの開示例における被処理基板の温度
制御は，被処理基板を載置したステージの中に液体窒素
を流したり，あるいはヒータを埋め込むという手法をと
っている。このような方法では，基板温度の制御はステ
ージと基板との熱伝導に依存しており, 基板 (ステー
ジ) の熱を効率よくステージ (基板) に伝えるのは困難
である。The temperature control of the substrate to be processed in these disclosed examples employs a method of flowing liquid nitrogen or embedding a heater in the stage on which the substrate to be processed is placed. In such a method, control of the substrate temperature depends on the heat conduction between the stage and the substrate, and it is difficult to efficiently transfer the heat of the substrate (stage) to the stage (substrate).
【０００５】しかも, ドライエッチングや気相成長は減
圧下で行うため，熱伝達はステージと基板との接触によ
る熱伝導もしくは赤外放射による輻射にたよる以外にな
い。そして，ステージ表面及び基板裏面とも微視的に見
れば凹凸があり，有効な接触面積は極めて小さい。この
ため，基板の固着に静電吸引を用いて密着を良くする方
法もあるが, それでも不十分である。In addition, since dry etching and vapor phase growth are performed under reduced pressure, heat transfer can be achieved only by heat conduction by contact between the stage and the substrate or radiation by infrared radiation. Microscopically, both the surface of the stage and the back of the substrate have irregularities, and the effective contact area is extremely small. For this reason, there is a method to improve the adhesion by using electrostatic suction to fix the substrate, but it is still insufficient.
【０００６】そこで，ステージと基板間にヘリウム(He)
や四弗化炭素(CF4) のような熱輸送用のガスを流す方法
が利用されており，この方法によりば熱伝導性はかなり
改善される。Therefore, helium (He) is provided between the stage and the substrate.
A method of flowing a gas for heat transport such as carbon tetrafluoride (CF 4 ) is used, and this method can significantly improve the thermal conductivity.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら，上記の
熱輸送用ガスは通常室温で供給されており，ステージと
基板間に導入されてから, ステージあるいは基板の温度
まで加熱あるいは冷却される。However, the above-mentioned heat-transporting gas is usually supplied at room temperature, and after being introduced between the stage and the substrate, it is heated or cooled to the temperature of the stage or the substrate.
【０００８】もし，エッチングが室温で行われる場合は
問題はないが，室温から大きく離れた高温, または低温
で行われる場合, この熱輸送用ガスはステージを冷却す
るかまたは加熱する方向にはたらくことになり, 被処理
基板の温度制御が難しくなる。If the etching is carried out at room temperature, there is no problem, but if the etching is carried out at a high temperature or a low temperature largely separated from the room temperature, this heat transporting gas works in the direction of cooling or heating the stage. Therefore, it becomes difficult to control the temperature of the substrate to be processed.
【０００９】熱輸送用ガスはエッチング雰囲気に対して
比較的高い圧力で用いられることから，ステージと基板
間での滞在時間が長く，熱伝導性の改善という本来の目
的は達せられるが，上記のように被処理基板の温度制御
性が悪くなる。Since the heat-transporting gas is used at a relatively high pressure with respect to the etching atmosphere, the residence time between the stage and the substrate is long and the original purpose of improving the thermal conductivity can be achieved. Thus, the temperature controllability of the substrate to be processed becomes poor.
【００１０】本発明は，被処理基板とステージ間に熱輸
送用ガスを流して基板温度の制御を行う基板処理装置に
おいて, 基板温度の制御性の向上を目的とする。An object of the present invention is to improve the controllability of the substrate temperature in a substrate processing apparatus that controls the substrate temperature by flowing a heat transporting gas between the substrate to be processed and the stage.
【００１１】[0011]
【課題を解決するための手段】上記課題の解決は（図１
〜３参照）， １）排気口を有する処理室 1と, 該処理室内に被処理基
板 3を載置するステージ4と，該ステージ 4と被処理基
板 3との間にガスを供給する手段 7と，該ガスの温度を
変更できる手段 8とを有する基板処理装置，あるいは ２）前記ガスの温度制御と前記ステージの温度制御とを
兼用する制御手段6Aを有する前記１記載の基板処理装
置，あるいは ３）前記被処理基板 3の温度測定手段11, 111 と，該被
処理基板 3の温度に応じて前記ガスの温度を変更できる
手段 8に帰還をかけるガス温度制御手段12とを有する前
記１あるいは２記載の基板処理装置，あるいは ４）前記１記載の基板処理装置において，前記ガスの温
度を前記ステージの温度と同等にする基板温度制御方
法，あるいは ５）前記３記載の基板処理装置において，前記被処理基
板 3の温度に応じて前記ガス温度制御手段12により, 前
記ガスの温度を変更できる手段 8に帰還をかける基板温
度制御方法により達成される。[Means for Solving the Problems]
3), 1) a processing chamber 1 having an exhaust port, a stage 4 for mounting a substrate 3 to be processed in the processing chamber, and means 7 for supplying a gas between the stage 4 and the substrate 3 to be processed 7 And the substrate processing apparatus having the means 8 capable of changing the temperature of the gas, or 2) the substrate processing apparatus according to the above 1, having the control means 6A for both the temperature control of the gas and the temperature control of the stage, or 3) The above 1 or 2 having temperature measuring means 11, 111 for the substrate 3 to be processed and gas temperature control means 12 for feeding back to a means 8 for changing the temperature of the gas according to the temperature of the substrate 3 to be processed. 2) The substrate processing apparatus according to 2 or 4) In the substrate processing apparatus according to 1 above, a substrate temperature control method for making the temperature of the gas equal to the temperature of the stage, or 5) the substrate processing apparatus according to 3 above, Substrate to be processed 3 This is achieved by a substrate temperature control method in which the gas temperature control means 12 feeds back to the means 8 that can change the temperature of the gas according to the temperature of the gas.
【００１２】[0012]
【作用】本発明によれば，ステージと熱輸送用ガスの温
度をあらかじめ同一にしておくことにより, ステージ温
度が熱輸送用ガスの導入によって変化することがないた
め，温度制御が効率良く行える。According to the present invention, by making the temperature of the stage and the heat-transporting gas the same in advance, the stage temperature does not change due to the introduction of the heat-transporting gas, so that the temperature control can be efficiently performed.
【００１３】いま，ステージと基板間の熱伝達の基礎原
理について図５を用いて説明する。２枚の板，が間
隔Ｄをおいて固定され，それぞれの温度がＴ0 , Ｔ1 と
する。板が磨いた金属のように低い放射率を持つ場合
は, ２枚の板の間の赤外放射による熱伝達は無視でき
る。板の間のガス圧力ｐ，ガス温度をＴとし，ガス分子
の平均自由行程をλとして，間隔Ｄが小さく，Ｄ≪λ
の条件が満たされる場合，すなわち，板のＡ面で跳ね
返ったガス分子が途中で他のガス分子と衝突しないでそ
のまま板のＢ面に達する場合を考える。Now, the basic principle of heat transfer between the stage and the substrate will be described with reference to FIG. Two plates are fixed at a distance D, and their temperatures are T 0 and T 1 . If the plate has a low emissivity, such as polished metal, the heat transfer due to infrared radiation between the two plates is negligible. The gas pressure between the plates is p, the gas temperature is T, the mean free path of the gas molecules is λ, the distance D is small, and D << λ
Consider the case where the condition (1) is satisfied, that is, the gas molecules repelled on the A surface of the plate reach the B surface of the plate as they are without colliding with other gas molecules on the way.
【００１４】この場合，単位時間に単位体積当たりにガ
ス分子が温度Ｔ0 の壁から持ち去る熱量Ｑ0 は， Ｑ0 ∝ｐα（Ｔ−Ｔ0 ） (1) と表せる。ここで，αは熱適応係数と呼ばれる。In this case, the heat quantity Q 0 taken away from the wall of the temperature T 0 by the gas molecules per unit volume per unit time can be expressed as Q 0 ∝pα (T−T 0 ) (1). Here, α is called the thermal adaptation coefficient.
【００１５】温度Ｔのガス分子が温度Ｔ0 の壁に衝突し
て温度Ｔ2 になったとすると，熱適応係数αは， α＝（Ｔ−Ｔ2 ）／（Ｔ−Ｔ0 ） (2) であり，０≦α≦１である。Assuming that gas molecules of temperature T collide with the wall of temperature T 0 to reach temperature T 2 , the thermal adaptation coefficient α is α = (T−T 2 ) / (T−T 0 ) (2) And 0 ≦ α ≦ 1.
【００１６】もし，ここで本発明に従って，Ｔ＝Ｔ0 と
おけば， Ｑ0 ∝ｐα（Ｔ−Ｔ0 ）＝０ (3） となり，ガス分子が温度Ｔ0 の壁から持ち去る熱量Ｑ0
は０となる。[0016] If, in accordance with the present invention wherein, if put as T = T 0, Q 0 αpα (T-T 0) = 0 (3) , and the heat quantity Q 0 of the gas molecules carried away from the wall of the temperature T 0
Is 0.
【００１７】同様に，温度Ｔ1 の壁から持ち去る熱量Ｑ
1 は， Ｑ1 ∝ｐα（Ｔ−Ｔ1 ） (4） と表せ，Ｔ＝Ｔ0 の場合は， Ｑ1 ∝ｐα（Ｔ0 −Ｔ1 ） (5) となり，式(3），(5) から，本発明の条件であるＴ＝Ｔ
0 の場合には，ガス分子は温度Ｔ1 の壁からのみ熱交換
をすることになる。Similarly, the amount of heat Q taken away from the wall at temperature T 1
1 can be expressed as Q 1 ∝pα (T−T 1 ) (4), and when T = T 0 , it becomes Q 1 ∝pα (T 0 −T 1 ) (5), and equations (3) and (5 ), The condition of the present invention is T = T
In the case of 0 , the gas molecules exchange heat only from the wall of temperature T 1 .
【００１８】[0018]
【実施例】以下の実施例では，基板処理装置として通常
の平行平板型反応性イオンエッチング(RIE) 装置を代表
例として説明する。EXAMPLES In the following examples, a typical parallel plate type reactive ion etching (RIE) apparatus will be described as a typical example of a substrate processing apparatus.
【００１９】図１は本発明の実施例１の説明図である。
図において， 1は処理室 (エッチング室) , 2は高周波
電源, 3は被処理基板, 4はステージで静電チャック,
5は冷却水通路, 6は基板冷却用恒温チラー,61は基板
冷却用恒温チラー内の恒温室, 7 は熱輸送用ガス通路,
8はガス冷却用チラー, 9は圧力計, 10はコンダクタン
スバルブである。FIG. 1 is an explanatory diagram of Embodiment 1 of the present invention.
In the figure, 1 is a processing chamber (etching chamber), 2 is a high frequency power supply, 3 is a substrate to be processed, 4 is a stage electrostatic chuck,
5 is a cooling water passage, 6 is a constant temperature chiller for cooling the substrate, 61 is a constant temperature chamber inside the constant temperature chiller for cooling the substrate, 7 is a gas passage for heat transport,
8 is a gas cooling chiller, 9 is a pressure gauge, and 10 is a conductance valve.
【００２０】被処理基板 3を載置するステージ 4は冷媒
により−10℃に冷却されており，ステージ 4と被処理基
板 3との間に熱輸送用ガスとしてHeガスをガス冷却用チ
ラー8 を経由して供給する。被処理基板 3の保持には静
電チャックを使用している。Heガスは被処理基板 3の裏
面に導入される前に, ガス冷却用チラー8 によりあらか
じめ−10℃に冷却される。The stage 4 on which the substrate 3 to be processed is placed is cooled to −10 ° C. by a coolant, and a He gas is used as a heat transporting gas between the stage 4 and the substrate 3 to be processed. Supply via. An electrostatic chuck is used to hold the substrate 3 to be processed. Before the He gas is introduced to the back surface of the substrate 3 to be processed, it is previously cooled to −10 ° C. by the gas cooling chiller 8.
【００２１】圧力計 9は熱輸送用ガスの圧力を測定す
る。例えば, 処理室の圧力 0.1 Torrに対し, 熱輸送用
ガスの圧力を 1〜10 Torr に保つように, コンダクタン
スバルブ10を調節する。The pressure gauge 9 measures the pressure of the heat transport gas. For example, the conductance valve 10 is adjusted so that the pressure of the heat-transporting gas is maintained at 1 to 10 Torr with respect to the pressure of the processing chamber of 0.1 Torr.
【００２２】図２は本発明の実施例２の説明図である。
この例は，ガス冷却用チラー8 を用いる代わりに，ステ
ージ冷却用の恒温チラー 6を熱輸送用ガス冷却に兼用し
ている。FIG. 2 is an explanatory view of the second embodiment of the present invention.
In this example, instead of using the gas cooling chiller 8, the constant temperature chiller 6 for stage cooling is also used for gas cooling for heat transport.
【００２３】すなわち, 熱輸送用Heガスの配管を, ステ
ージ冷却用の恒温チラー 6A の恒温槽6A1 内を通すこと
により, ステージの温度を制御する手段と熱輸送用Heガ
スの温度を制御する手段とを兼用している。That is, a means for controlling the temperature of the stage and a means for controlling the temperature of the He gas for heat transport are provided by passing the He gas pipe for heat transport through the constant temperature tank 6A1 of the constant temperature chiller 6A for cooling the stage. Is also used as.
【００２４】図３は本発明の実施例３の説明図である。
図において，11は光ファイバ温度計, 111 は光ファイバ
温度計のプローブ, 12は基板温度制御装置である。FIG. 3 is an explanatory view of the third embodiment of the present invention.
In the figure, 11 is an optical fiber thermometer, 111 is an optical fiber thermometer probe, and 12 is a substrate temperature controller.
【００２５】この例は，被処理基板の温度測定手段とし
て光ファイバ温度計を用い, 基板温度の測定値を制御装
置12を介してガス冷却用チラー 8に帰還して, 被処理基
板の温度を制御している。In this example, an optical fiber thermometer is used as the temperature measuring means of the substrate to be processed, and the measured value of the substrate temperature is returned to the gas cooling chiller 8 via the controller 12 to measure the temperature of the substrate to be processed. Have control.
【００２６】図４は本発明の効果を説明する図である。
図はステージの設定温度が−10℃のときの基板温度の経
時変化を示す。図において，(a) は従来例による結果を
示し, 熱輸送用Heガスを室温で供給する方法であり,
(b) は実施例１あるいは２による結果を示し，エッチン
グ開始とともにイオン照射や反応熱により基板温度が急
激に上昇するが，この場合は基板温度の上昇を半分程度
に抑えることができる。FIG. 4 is a diagram for explaining the effect of the present invention.
The figure shows the change over time in the substrate temperature when the set temperature of the stage is -10 ° C. In the figure, (a) shows the result of the conventional example, which is a method of supplying He gas for heat transport at room temperature.
(b) shows the results according to Example 1 or 2, and the substrate temperature rises rapidly due to ion irradiation and reaction heat at the start of etching, but in this case, the rise in substrate temperature can be suppressed to about half.
【００２７】(c) は実施例３の結果を示し，エッチング
開始とともに実施例１，２と同様に瞬間的に基板温度が
上昇するが，基板温度制御装置12の帰還処理により基板
温度は速やかに設定温度までもどっている。(C) shows the result of the third embodiment, in which the substrate temperature rises instantaneously with the start of etching similarly to the first and second embodiments, but the substrate temperature is quickly returned by the feedback process of the substrate temperature control device 12. It has returned to the set temperature.
【００２８】以上の実施例では, 基板を冷却して処理を
行う場合について説明したが, 基板を加熱して処理する
場合にも発明の要旨は変わらない。また，エッチング装
置以外にもその他の処理装置，例えば気相成長装置にも
本発明は適用可能である。In the above embodiments, the case where the substrate is cooled for processing is explained, but the gist of the invention does not change when the substrate is heated for processing. Further, the present invention can be applied to other processing apparatuses besides the etching apparatus, for example, a vapor phase growth apparatus.
【００２９】[0029]
【発明の効果】本発明によれば，被処理基板とステージ
間に熱輸送用ガスを流して基板温度の制御を行う基板処
理装置において, 基板温度の制御性を向上することがで
きた。According to the present invention, the controllability of the substrate temperature can be improved in the substrate processing apparatus for controlling the substrate temperature by flowing the heat transporting gas between the substrate to be processed and the stage.
【００３０】この結果，近年，微細化されたデバイスの
製造プロセスに必要になってきた，減圧雰囲気中での低
温または高温のエッチング処理や成膜処理を確実に行う
ことができる。As a result, the low-temperature or high-temperature etching treatment or film-forming treatment in a decompressed atmosphere, which has become necessary in recent years for the manufacturing process of miniaturized devices, can be reliably performed.
【図１】 本発明の実施例１の説明図FIG. 1 is an explanatory diagram of a first embodiment of the present invention.
【図２】 本発明の実施例２の説明図FIG. 2 is an explanatory diagram of a second embodiment of the present invention.
【図３】 本発明の実施例３の説明図FIG. 3 is an explanatory diagram of Embodiment 3 of the present invention.
【図４】 本発明の効果を説明する図FIG. 4 is a diagram for explaining the effect of the present invention.
【図５】 本発明の原理説明図FIG. 5 is an explanatory view of the principle of the present invention.
1 処理室でエッチング室 2 高周波電源 3 被処理基板 4 ステージ 5 冷却水通路 6 基板冷却用恒温チラー 6A ガス温度制御を兼用した基板冷却用恒温チラー 7 熱輸送用ガス通路 8 ガス冷却用チラー 9 圧力計 10 コンダクタンスバルブ 11 光ファイバ温度計 111 光ファイバ温度計のプローブ 12 温度制御装置 1 Etching chamber in processing chamber 2 High frequency power supply 3 Substrate to be processed 4 Stage 5 Cooling water passage 6 Constant temperature chiller for substrate cooling 6A Constant temperature chiller for substrate cooling also serving as gas temperature control 7 Gas passage for heat transport 8 Gas cooling chiller 9 Total 10 Conductance valve 11 Optical fiber thermometer 111 Optical fiber thermometer probe 12 Temperature controller
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/205 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI technical display location H01L 21/205
Claims (5)
内に被処理基板(3）を載置するステージ(4）と，該ステ
ージ(4）と被処理基板(3）との間にガスを供給する手段
(7) と，該ガスの温度を変更できる手段(8) とを有する
ことを特徴とする基板処理装置。1. A processing chamber (1) having an exhaust port, a stage (4) for mounting a substrate (3) to be processed in the processing chamber, and the stage (4) and the substrate (3) to be processed. Means for supplying gas between
A substrate processing apparatus comprising: (7); and means (8) capable of changing the temperature of the gas.
度制御とを兼用する制御手段(6A)を有することを特徴と
する請求項１記載の基板処理装置。2. The substrate processing apparatus according to claim 1, further comprising a control means (6A) that also serves to control the temperature of the gas and the temperature of the stage.
111) と，該被処理基板(3）の温度に応じて前記ガスの
温度を変更できる手段(8) に帰還をかけるガス温度制御
手段(12)とを有することを特徴とする請求項１あるいは
２記載の基板処理装置。3. A temperature measuring means (11, 11) for measuring the substrate (3) to be processed.
111) and gas temperature control means (12) for feeding back to a means (8) capable of changing the temperature of the gas according to the temperature of the substrate (3) to be processed. 2. The substrate processing apparatus according to item 2.
前記ガスの温度を前記ステージの温度と同等にすること
を特徴とする基板温度制御方法。4. The substrate processing apparatus according to claim 1,
A substrate temperature control method, wherein the temperature of the gas is made equal to the temperature of the stage.
前記被処理基板(3）の温度に応じて前記ガス温度制御手
段(12)により, 前記ガスの温度を変更できる手段(8) に
帰還をかけることを特徴とする基板温度制御方法。5. The substrate processing apparatus according to claim 3,
A substrate temperature control method, wherein the gas temperature control means (12) feeds back to a means (8) capable of changing the temperature of the gas according to the temperature of the substrate (3) to be processed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9475594A JPH07302785A (en) | 1994-05-09 | 1994-05-09 | Apparatus for treatment of substrate and control of substrate temperature |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9475594A JPH07302785A (en) | 1994-05-09 | 1994-05-09 | Apparatus for treatment of substrate and control of substrate temperature |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07302785A true JPH07302785A (en) | 1995-11-14 |
Family
ID=14118929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9475594A Withdrawn JPH07302785A (en) | 1994-05-09 | 1994-05-09 | Apparatus for treatment of substrate and control of substrate temperature |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07302785A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998014999A1 (en) * | 1996-09-30 | 1998-04-09 | Lam Research Corporation | Variable high temperature chuck for high density plasma chemical vapor deposition |
| US7290589B2 (en) | 2001-03-05 | 2007-11-06 | Isis Innovation Limited | Control of deposition and other processes |
-
1994
- 1994-05-09 JP JP9475594A patent/JPH07302785A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998014999A1 (en) * | 1996-09-30 | 1998-04-09 | Lam Research Corporation | Variable high temperature chuck for high density plasma chemical vapor deposition |
| US5835334A (en) * | 1996-09-30 | 1998-11-10 | Lam Research | Variable high temperature chuck for high density plasma chemical vapor deposition |
| US7290589B2 (en) | 2001-03-05 | 2007-11-06 | Isis Innovation Limited | Control of deposition and other processes |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20010731 |