JPH05291225A - Evaluation method of cleaning ability - Google Patents
Evaluation method of cleaning abilityInfo
- Publication number
- JPH05291225A JPH05291225A JP9508592A JP9508592A JPH05291225A JP H05291225 A JPH05291225 A JP H05291225A JP 9508592 A JP9508592 A JP 9508592A JP 9508592 A JP9508592 A JP 9508592A JP H05291225 A JPH05291225 A JP H05291225A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- foreign matter
- positions
- foreign
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Testing Of Individual Semiconductor Devices (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、洗浄能力評価方法に
関するもので、詳しくはウェハ上の特定位置において異
物の数の増減があった位置の数、大きさの増減があった
位置の数を検査し、ならびにその位置の数が異物が存在
する全位置の数に対する割合を算出して洗浄能力を評価
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning ability evaluation method, and more specifically, it determines the number of positions where the number of foreign particles has increased or decreased and the number of positions where size has increased or decreased at a specific position on a wafer. The cleaning performance is evaluated by inspecting and calculating the ratio of the number of the positions to the total number of the positions where the foreign matter exists.
【０００２】[0002]
【従来の技術】ＬＳＩの製造は約１００工程を約２カ月
前後の日時を要して行う。この様な長い工期の間には、
工程間の搬送や放置、あるいは作業者の介在により半製
品は各種の汚染を受ける。これらの汚染を最小限にする
ことによってデバイスの製造歩留まりは向上し、プロセ
スの信頼性、再現性を著しく改善できる。そのためプロ
セスの各工程前に洗浄を行い、表面の汚染物を除去する
ことは従来より重要な課題であった。例えば、４Ｍビッ
トのＤＲＡＭの設計には０．８μｍ、１６Ｍビットでは
０．５μｍの配線技術が必要であり、この様な微細加工
を可能にするには、それぞれ０．２μｍ、０．１μｍ程
度の汚染粒子の制御が必要である。そのため従来は当初
の目的を達成するためＲＣＡ洗浄とＩＰＡ気相乾燥を併
用した洗浄に代表されるウェット洗浄で汚染粒子の除去
を行っていた。2. Description of the Related Art The manufacturing of an LSI requires about 100 processes, which takes about 2 months. During such a long construction period,
Semi-finished products are subject to various types of contamination due to transportation between processes, leaving them unattended, or intervention of workers. By minimizing these contaminations, the manufacturing yield of devices is improved, and the process reliability and reproducibility can be significantly improved. Therefore, it has been more important than before to perform cleaning before each step of the process to remove contaminants on the surface. For example, a wiring technology of 0.8 μm is required for designing a 4 Mbit DRAM and 0.5 μm is required for a 16 Mbit DRAM, and 0.2 μm and 0.1 μm are required to enable such fine processing. Control of pollutant particles is required. Therefore, conventionally, in order to achieve the initial purpose, contaminant particles are removed by wet cleaning represented by cleaning in which RCA cleaning and IPA vapor phase drying are used together.
【０００３】前記、従来の技術（洗浄）については、例
えば「小嶋、第２５回応用スペクトルメトリー、ｐ１９
１〜１９６(１９９０)」、「化学総説、Ｎo.４４、表面
の改質、日本化学会編、ｐ１４７〜１５５(１９８
４)」、「土橋、精密工学会誌、５４、１０、ｐ１８４
０〜１８４４(１９８８)」、「センエンジニアリング
(株)カタログ紫外線利用技術」等に詳細に記載されてい
る。Regarding the above-mentioned conventional technique (cleaning), see, for example, "Kojima, 25th Applied Spectrometry, p19.
1-196 (1990) "," Chemical Review, No.44, Surface Modification, Japan Chemical Society, pp.147-155 (198).
4) ”,“ Tsuchabashi, Journal of Precision Engineering, 54, 10, p184
0-1844 (1988) "," Sen Engineering "
It is described in detail in "Catalog Co., Ltd. Ultraviolet Utilization Technology".
【０００４】前記記載の洗浄効果の評価については、ウ
ェハ表面に存在する異物の数を計測する方法、例えばレ
ーザ表面検査装置等によるウェハ上の異物計測が行われ
ている。現行のレーザ表面検査装置は、ウェハ表面全域
にレーザ光を走査照射し、この時の暗視野部に設けた光
検出器の出力と走査レーザ光の同期をもって、異物の存
在とその存在位置を特定する検出装置（例えば、レーザ
光照射位置にたまたま異物が存在するとレーザ光はほぼ
異物の大きさに依存した強度で乱反射され、この乱反射
光が暗視野部に備え付けた光検出器に入射し、信号とし
て検出され、レーザ光照射位置に異物が存在することが
確認されるものである）と、その結果を表示する装置と
で構成されたものである。In order to evaluate the cleaning effect described above, a method of measuring the number of foreign matters existing on the wafer surface, for example, measuring the foreign matters on the wafer by a laser surface inspection device or the like is performed. The current laser surface inspection device scans and irradiates the entire surface of the wafer with laser light, and at this time, the presence of foreign matter and its location are identified by synchronizing the output of the photodetector provided in the dark field and the scanning laser light. Detector (for example, if a foreign substance happens to be present at the laser beam irradiation position, the laser beam is diffusely reflected with an intensity substantially dependent on the size of the foreign substance, and this diffusely reflected light is incident on the photodetector provided in the dark field section, and the Is detected, and it is confirmed that foreign matter is present at the laser beam irradiation position), and a device for displaying the result.
【０００５】なお、ここでいうレーザ表面検査装置とし
ては、例えば日立電子エンジニアリング株式会社製ＬＳ
−６０００レーザ表面検査装置、ＩＳ−２０００レーザ
表面検査装置等がある。それらについての検査原理及び
その装置性能等については、それぞれの装置取扱い説明
書に詳細に記載されている。The laser surface inspection device referred to here is, for example, LS manufactured by Hitachi Electronics Engineering Co., Ltd.
-6000 laser surface inspection device, IS-2000 laser surface inspection device and the like. The inspection principle and the device performance of these devices are described in detail in each device instruction manual.
【０００６】[0006]
【発明が解決しようとする課題】さて、洗浄に伴う異物
数の変化が持つ構成要素について分類すると、異物の除
去、異物の非除去及び汚染による異物の付着という３つ
の異なる要素から構成されていることに気づく。The constituent elements of the change in the number of foreign matters due to cleaning are classified into three different elements: removal of foreign matter, non-removal of foreign matter, and adhesion of foreign matter due to contamination. Notice that.
【０００７】しかし、従来のレーザ表面検査装置に代表
される評価方法は、ただ単に任意のウェハ表面上に存在
する異物とその存在位置を計測し、それを表示するにと
どまっていた。そのため従来のレーザ表面検査装置で
は、同一ウェハの異物測定においても洗浄工程に関係な
く異物の位置と個数のみを表示するため、洗浄に伴う個
々の異物の変化についての情報は全く得られなかった
（洗浄前後のウェハにおいて、ウェハ上のどの位置の異
物が洗浄されたか、あるいは洗浄されなかったか、また
は洗浄工程によってどの粒子が新たに汚染されたかわか
らなかった。また、各異物の洗浄に伴う成長の有無につ
いてもわからなかった）。そのため従来のレーザ表面検
査装置に代表される評価方法では、洗浄に伴う異物の追
跡調査ができないため、検討する洗浄方法あるいは洗浄
装置の持つ洗浄能力、または汚染粒子の数がどの様にな
っているか全く判断することができないという問題点が
あった。さらに、各異物（洗浄される異物、洗浄されな
かった異物、新たに汚染された異物）の数がわからない
ため、それぞれの粒子の数の全体の粒子数に対する比率
等も算出できない等、どのような洗浄がどの様な種類の
異物と強い相関関係を持つかわかりにくく、異物変化に
ついて定量的に客観的に表現できる手法の適応ができな
いという問題点があった。そのため、結果として、優れ
た洗浄方法あるいは洗浄装置の客観的な選定ができず、
十分なデバイスの製造歩留まりを得ることができなかっ
た。However, the evaluation method typified by the conventional laser surface inspection apparatus merely measures the foreign matter existing on an arbitrary wafer surface and its existing position and displays it. Therefore, in the conventional laser surface inspection apparatus, even when measuring the foreign matter on the same wafer, only the position and the number of the foreign matter are displayed regardless of the cleaning process. Therefore, no information about the change of each foreign matter due to the cleaning can be obtained ( In the wafer before and after cleaning, it was not known which position on the wafer the foreign matter was or was not cleaned, or which particle was newly contaminated by the cleaning process. I didn't even know about it. Therefore, in the evaluation method typified by the conventional laser surface inspection apparatus, since it is not possible to trace and check the foreign substances involved in cleaning, the cleaning method to be examined, the cleaning ability of the cleaning apparatus, or the number of contaminant particles is determined. There was a problem that I could not judge at all. Furthermore, since the number of each foreign substance (the foreign substance to be washed, the foreign substance which has not been washed, the newly contaminated foreign substance) is unknown, the ratio of the number of each particle to the total number of particles cannot be calculated. There is a problem that it is difficult to understand what kind of foreign matter the cleaning has a strong correlation with, and it is not possible to apply a method that can quantitatively and objectively express the foreign matter change. Therefore, as a result, it is not possible to objectively select an excellent cleaning method or cleaning device,
It was not possible to obtain a sufficient device manufacturing yield.
【０００８】この発明は、かかる従来の問題点を解決す
るためになされたもので、例えば検討した洗浄方法及び
洗浄装置の能力を定量的に評価できる評価方法を提供す
ることを目的とする。特に、洗浄前後のウェハにおい
て、ウェハ上のどの位置の異物が洗浄されたか、あるい
は洗浄されなかったか、さらに洗浄工程によってどの粒
子が新たに汚染されたかを分別する評価方法、及び洗浄
評価を与える洗浄能の評価パラメーターを与えるもので
ある。The present invention has been made to solve the above-mentioned conventional problems, and an object thereof is to provide an evaluation method capable of quantitatively evaluating the performance of the cleaning method and cleaning apparatus studied. In particular, in a wafer before and after cleaning, an evaluation method for discriminating which position on the wafer was cleaned or not cleaned, and which particle was newly contaminated by the cleaning process, and a cleaning evaluation. It gives the evaluation parameters of Noh.
【０００９】[0009]
【課題を解決するための手段】この発明の洗浄能力評価
方法は、洗浄前後にウェハ表面を検査し、この検査で観
測される複数個の異物の観測位置及び大きさを特定記憶
し、上記洗浄前後それぞれの検査で観測された複数個の
異物の観測位置を順次照合することにより、上記各観測
位置における異物の数及び大きさの増減を検査するとと
もに、異物減少があった位置の数Ｐc ，異物変化がなか
った位置の数Ｐn ，異物増加があった位置の数Ｐp ，洗
浄前の全異物数Ｐt，洗浄後の全異物数Ｐt’，異物の大
きさが大きくなった位置の数Ｐg ，異物が小さくなった
位置の数Ｐd として、以下に示す算出式に従って上記洗
浄前後のウェハ上異物の数及び大きさの増減評価を行
い、洗浄能力を評価するようにしたものである。 洗浄能 Ａc ＝ Ｐc ／ Ｐt × １００ (％) 非洗浄能 Ａn ＝ Ｐn ／ Ｐt × １００ (％) 汚染粒子割合 Ａp ＝ Ｐp ／ Ｐt’× １００ (％) 成長能 Ａg ＝ Ｐg ／ Ｐn × １００ (％) 退化能 Ａd ＝ Ｐd ／ Ｐn × １００ (％)According to a cleaning ability evaluation method of the present invention, a wafer surface is inspected before and after cleaning, and observation positions and sizes of a plurality of foreign matters observed in this inspection are specified and stored, and the cleaning is performed. By sequentially comparing the observation positions of a plurality of foreign substances observed in the front and rear inspections, the increase and decrease in the number and size of the foreign substances at each observation position can be inspected, and the number Pc of the positions where the foreign substances have decreased, The number Pn of positions where there is no foreign matter change, the number Pp of positions where foreign matter has increased, the total number of foreign matter Pt before cleaning, the total number of foreign matter Pt 'after cleaning, and the number Pg of locations where the size of foreign matter has increased, As the number Pd of the positions where the foreign matter becomes small, the cleaning ability is evaluated by increasing or decreasing the number and size of the foreign matter on the wafer before and after the cleaning according to the following calculation formula. Cleaning capacity Ac = Pc / Pt × 100 (%) Non-cleaning capacity An = Pn / Pt × 100 (%) Contamination particle ratio Ap = Pp / Pt '× 100 (%) Growth capacity Ag = Pg / Pn × 100 (%) ) Degradation ability Ad = Pd / Pn × 100 (%)
【００１０】[0010]
【作用】この発明においては、洗浄前のウェハ検査で観
測される個々の異物のあった位置について、洗浄後のウ
ェハ検査で観測される個々の異物のあった位置を順次照
合することにより、洗浄されたか（洗浄前のウェハ検査
で異物観測された位置に洗浄後のウェハ検査で異物観測
がされない場合、異物は洗浄されたと判断する）、ある
いは洗浄されなかったか（洗浄前のウェハ検査で異物観
測された位置に洗浄後のウェハ検査でも異物観測される
場合、異物は洗浄されなかったと判断する）、または洗
浄工程によって新たに汚染されたか（洗浄前のウェハ検
査で異物観測されなかった位置に洗浄後のウェハ検査で
異物観測される場合、新たに汚染された異物があったと
判断する）を分別することが容易にできる。また、洗浄
されなかった異物について、洗浄前後でその異物の大き
さを比較することにより、洗浄に伴う異物成長の有無を
検査することが容易にできる。さらに上記算出式を適応
してウェハ上異物増減評価及び異物の大きさの増減評価
等が行えるので洗浄方法及び洗浄装置の能力を定量的に
容易に評価できる。According to the present invention, the position of each foreign matter observed in the wafer inspection before cleaning is sequentially compared with the position of each foreign matter observed in the wafer inspection after cleaning. Whether the foreign matter was observed (if the foreign matter was not observed in the wafer inspection after cleaning at the position where the foreign matter was observed in the wafer inspection before cleaning, it is determined that the foreign matter was cleaned) or was not cleaned (the foreign matter was observed in the wafer inspection before cleaning) If foreign matter is observed in the wafer inspection after cleaning at the designated position, it is determined that the foreign matter was not cleaned), or if it was newly contaminated by the cleaning process (cleaning at the position where no foreign matter was observed in the wafer inspection before cleaning) If foreign matter is observed in the subsequent wafer inspection, it is easily determined that there is a newly contaminated foreign matter). Further, by comparing the size of the foreign matter that has not been cleaned before and after cleaning, it is possible to easily inspect whether or not the foreign matter has grown due to cleaning. Further, since the above-mentioned calculation formula is applied to perform the foreign matter increase / decrease evaluation on the wafer, the increase / decrease evaluation of the foreign matter size, etc., the cleaning method and the performance of the cleaning apparatus can be quantitatively and easily evaluated.
【００１１】[0011]
実施例１ 図３は例えば日立電子エンジニアリング株式会社製ＬＳ
−６０００レーザ表面検査装置等を用いて、洗浄前にお
けるウェハ表面上に存在する異物とその存在位置を計測
した結果をそのまま示す模式図である。図中、Ａ〜Ｑ及
びａ〜ｎはウェハの位置を示す添字である。またウェハ
で一部欠けている部分はウェハのオリフラを示す。そし
て●はウェハ上の異物を示しており、図３中には２０個
の異物が存在している。Example 1 FIG. 3 shows, for example, LS manufactured by Hitachi Electronics Engineering Co., Ltd.
FIG. 6 is a schematic diagram showing the results of measuring the foreign matter existing on the wafer surface before cleaning and the existing position thereof using a −6000 laser surface inspection device or the like as they are. In the figure, A to Q and a to n are subscripts indicating the position of the wafer. The part of the wafer that is partially missing indicates the orientation flat of the wafer. The solid circles represent foreign matter on the wafer, and there are 20 foreign matter in FIG.
【００１２】図４は洗浄後におけるウェハ表面上に存在
する異物とその存在位置を計測した結果をそのまま示す
の模式図である。図４中には２０個の異物が存在してい
る。FIG. 4 is a schematic diagram showing the results of measuring the foreign matter existing on the wafer surface after cleaning and the existing position thereof as they are. In FIG. 4, 20 foreign substances are present.
【００１３】図３、図４中の異物数はたまたまどちらも
２０個であるため、あたかも洗浄前後で異物の増減が無
かったようにみえる。Since the number of foreign matters in FIGS. 3 and 4 happens to be 20 in both cases, it seems as if the foreign matter did not increase or decrease before and after the cleaning.
【００１４】図１、図２はこの発明に係わる洗浄能力評
価方法を上記計測検査結果に適応した模式図で、図１は
洗浄前の異物観測結果、図２は洗浄後の異物観測結果
で、図中、○は洗浄された異物、◆は洗浄されなかった
異物、二重丸は新たに汚染された異物を示す。洗浄前の
ウェハ検査で観測される個々の異物のあった位置につい
て（図３参照）、洗浄後のウェハ検査で観測される個々
の異物のあった位置（図４参照）を順次照合することに
より、洗浄されたか（洗浄前のウェハ検査で異物観測さ
れた位置に洗浄後のウェハ検査で異物観測がされない場
合、異物は洗浄されたと判断する：図１で○で表現され
る異物）、あるいは洗浄されなかったか（洗浄前のウェ
ハ検査で異物観測された位置に洗浄後のウェハ検査でも
異物観測される場合、異物は洗浄されなかったと判断す
る：図１、図２で◆で表現される異物）、または洗浄工
程によって新たに汚染されたか（洗浄前のウェハ検査で
異物観測されなかった位置に洗浄後のウェハ検査で異物
観測される場合、新たに汚染された異物があったと判断
する：図２で二重丸で表現される異物）を分別する。1 and 2 are schematic diagrams in which the cleaning ability evaluation method according to the present invention is applied to the above measurement inspection results. FIG. 1 is a result of foreign matter observation before cleaning, and FIG. 2 is a result of foreign matter observation after cleaning. In the figure, ○ indicates a cleaned foreign matter, ◆ indicates a non-cleaned foreign matter, and double circle indicates a newly contaminated foreign matter. By sequentially comparing the positions of individual foreign particles observed in the wafer inspection before cleaning (see FIG. 3), the positions of individual foreign particles observed in the wafer inspection after cleaning (see FIG. 4) , Washed (if no foreign matter is observed in the wafer inspection after cleaning at the position where foreign matter was observed in the wafer inspection before cleaning, it is judged that the foreign matter has been cleaned: foreign matter represented by a circle in FIG. 1) or washed Was it not done? (If foreign matter is observed in the wafer inspection after cleaning at the position where foreign matter was observed in the wafer inspection before cleaning, it is judged that the foreign matter was not cleaned: foreign matter represented by ◆ in Figs. 1 and 2.) , Or if it was newly contaminated by the cleaning process (if a foreign substance is observed in the wafer inspection after cleaning at a position where no foreign substance was observed in the wafer inspection before cleaning, it is determined that there is a newly contaminated foreign substance: Figure In fractionating foreign matter) that it is represented by a double circle.
【００１５】図１から洗浄で７個の異物が除去されたこ
と、１３個の異物が洗浄されずにそのまま残ったこと等
がわかる。一方、図２からは、洗浄したために７個の異
物が新たに付着したこと、洗浄したにも拘らず１３個の
異物がそのまま残ったこと等がわかる。It can be seen from FIG. 1 that 7 foreign matters were removed by washing, 13 foreign matters remained without being washed, and the like. On the other hand, it can be seen from FIG. 2 that seven foreign substances are newly attached due to the cleaning, and that 13 foreign substances remain as they are despite the cleaning.
【００１６】以上説明したように、この発明に係わる洗
浄能力評価方法を適応した場合、どの異物が洗浄された
か、あるいは洗浄されなかったか、または洗浄工程によ
って新たに汚染されたかを分別することが容易にできる
ことがわかる。洗浄されなかった異物が特定でき、これ
を物理的あるいは化学的に分析することで洗浄されにく
い異物の正体を解析することも可能となる。As described above, when the cleaning ability evaluation method according to the present invention is applied, it is easy to distinguish which foreign matter has been cleaned, which has not been cleaned, or which is newly contaminated by the cleaning process. You can see that The foreign matter that has not been cleaned can be specified, and by physically or chemically analyzing it, it is possible to analyze the identity of the foreign matter that is difficult to clean.
【００１７】また、洗浄されなかった異物について、洗
浄前後でその異物の大きさを比較することにより洗浄に
伴う異物成長の有無を容易に検査することができる。こ
れによって検討した洗浄が異物を溶かして洗浄に寄与す
るのか（異物の大きさが小さくなる場合）、あるいはそ
うでないのかがわかる。Further, by comparing the sizes of the uncleaned foreign matter before and after the cleaning, it is possible to easily inspect whether or not the foreign matter has grown due to the cleaning. From this, it is possible to know whether the examined cleaning contributes to the cleaning by melting the foreign matter (when the size of the foreign matter becomes small) or not.
【００１８】さらに、各異物観測位置において、異物減
少があった位置の数Ｐc ，異物変化がなかった位置の数
Ｐn ，異物増加があった位置の数Ｐp ，洗浄前の全異物
数Ｐt，洗浄後の全異物数Ｐt’，及び異物の大きさが大
きくなった位置の数Ｐg ，異物が小さくなった位置の数
Ｐd というように各種の異物数を特定できるため、以下
に示すような数学的手法による客観的な洗浄能力評価パ
ラメータの適応が可能となる効果が得られ、ウェハ上異
物数増減評価及び異物の大きさの増減評価等が行えるた
め、洗浄方法及び洗浄装置の能力を定量的に容易に評価
できるようになる。 洗浄能 Ａc ＝ Ｐc ／ Ｐt × １００ (％) 非洗浄能 Ａn ＝ Ｐn ／ Ｐt × １００ (％) 汚染粒子割合 Ａp ＝ Ｐp ／ Ｐt’× １００ (％) 成長能 Ａg ＝ Ｐg ／ Ｐn × １００ (％) 退化能 Ａd ＝ Ｐd ／ Ｐn × １００ (％)Further, at each foreign matter observing position, the number Pc of the locations where the foreign matter has decreased, the number Pn of the locations where the foreign matter has not changed, the number Pp of the locations where the foreign matter has increased, the total number of foreign matter Pt before cleaning, and the cleaning It is possible to specify various foreign matter numbers such as the total number of foreign matter Pt ', the number Pg of positions where the size of the foreign matter becomes large, and the number Pd of positions where the size of the foreign matter becomes smaller. The effect that the objective cleaning capacity evaluation parameter can be applied by the method can be obtained, and the evaluation of the number of foreign particles on the wafer and the evaluation of the size of foreign particles can be performed. It will be easy to evaluate. Cleaning capacity Ac = Pc / Pt × 100 (%) Non-cleaning capacity An = Pn / Pt × 100 (%) Contamination particle ratio Ap = Pp / Pt '× 100 (%) Growth capacity Ag = Pg / Pn × 100 (%) ) Degradation ability Ad = Pd / Pn × 100 (%)
【００１９】これによって、種々の洗浄条件との比較を
行うことができるようになり、洗浄される異物と洗浄さ
れない異物、あるいは洗浄工程によって新たに汚染され
た異物がどの様な関係（割合）となるか等が定量的に評
価できるため、検討した洗浄方法及び洗浄装置の能力が
客観的に判断でき、結果的に優れた洗浄方法及び洗浄装
置の開発ならびに検討に要する実験項目、実験数（再現
性確認のための実験）、また所要時間の大幅な短縮が可
能となる。As a result, it becomes possible to compare various cleaning conditions, and the relationship (ratio) between the foreign matter to be cleaned and the foreign matter not to be cleaned, or the foreign matter newly contaminated by the cleaning process. Since it is possible to quantitatively evaluate whether the cleaning method and cleaning device that have been studied can be objectively judged, and as a result, the experimental items and the number of experiments (reproduction) required for the development and investigation of an excellent cleaning method and cleaning device It is possible to significantly reduce the required time).
【００２０】なお、従来のウェハ上異物検査装置は、こ
の発明の方法をマイコン制御で適応することにより、
「洗浄方法及び洗浄装置の能力を定量的に評価する洗浄
能力評価パラメータ」をもった自動測定評価装置に改造
することができる。この場合、自動的に図３、図４に示
すような洗浄された異物、洗浄されなかった異物、また
は洗浄工程によって新たに汚染された異物と分別した表
現でウェハ上異物検査結果として表示される。また、洗
浄された異物についてどの異物が洗浄に伴う成長があっ
たか、あるいは退化があったかも表示される。また、こ
れらの異物に関するデータをもとに各種異物の数もマイ
コンで自動計数できるため、下式に基づき種々の洗浄能
力評価パラメータも表示することができる。 洗浄能 Ａc ＝ Ｐc ／ Ｐt × １００ (％) 非洗浄能 Ａn ＝ Ｐn ／ Ｐt × １００ (％) 汚染粒子割合 Ａp ＝ Ｐp ／ Ｐt’× １００ (％) 成長能 Ａg ＝ Ｐg ／ Ｐn × １００ (％) 退化能 Ａd ＝ Ｐd ／ Ｐn × １００ (％）The conventional on-wafer foreign matter inspection apparatus is adapted to apply the method of the present invention by microcomputer control.
It can be modified to an automatic measurement / evaluation apparatus having "a cleaning ability evaluation parameter for quantitatively evaluating the cleaning method and the capacity of the cleaning apparatus". In this case, the foreign matter on-wafer inspection result is automatically displayed as a foreign matter that has been cleaned, foreign matter that has not been cleaned, or foreign matter that is newly contaminated by the cleaning process, as shown in FIGS. .. In addition, regarding the cleaned foreign matter, which foreign matter has grown due to cleaning or has been degenerated is also displayed. Further, since the number of various foreign substances can be automatically counted by the microcomputer based on the data relating to these foreign substances, various cleaning performance evaluation parameters can be displayed based on the following formula. Cleaning capacity Ac = Pc / Pt × 100 (%) Non-cleaning capacity An = Pn / Pt × 100 (%) Contamination particle ratio Ap = Pp / Pt '× 100 (%) Growth capacity Ag = Pg / Pn × 100 (%) ) Degradation ability Ad = Pd / Pn × 100 (%)
【００２１】[0021]
【発明の効果】以上のように、この発明によれば、洗浄
前後にウェハ表面を検査し、この検査で観測される複数
個の異物の観測位置及び大きさを特定記憶し、上記洗浄
前後それぞれの検査で観測された複数個の異物の観測位
置を順次照合することにより、上記各観測位置における
異物の数及び大きさの増減を検査するとともに、異物減
少があった位置の数Ｐｃ ，異物変化がなかった位置の
数Ｐn ，異物増加があった位置の数Ｐp ，洗浄前の全異
物数Ｐt，洗浄後の全異物数Ｐt’，異物の大きさが大き
くなった位置の数Ｐg ，異物が小さくなった位置の数Ｐ
d として、以下に示す算出式に従って上記洗浄前後のウ
ェハ上異物の数及び大きさの増減評価を行い、洗浄能力
を評価するようにしたので、 洗浄能 Ａc ＝ Ｐc ／ Ｐt × １００ (％) 非洗浄能 Ａn ＝ Ｐn ／ Ｐt × １００ (％) 汚染粒子割合 Ａp ＝ Ｐp ／ Ｐt’× １００ (％) 成長能 Ａg ＝ Ｐg ／ Ｐn × １００ (％) 退化能 Ａd ＝ Ｐd ／ Ｐn × １００ (％) 洗浄されたか、あるいは洗浄されなかったか、または洗
浄工程によって新たに汚染されたかを分別することが容
易にできる効果がある。また、洗浄されなかった異物に
ついて、洗浄前後でその異物の大きさを比較することに
より洗浄に伴う異物成長の有無を容易に検査することが
できる効果がある。そして上記算出式によりウェハ上異
物数増減評価及び異物の大きさの増減評価等が行えるた
め、洗浄方法及び洗浄装置の能力を定量的に容易に評価
できる効果がある。As described above, according to the present invention, the wafer surface is inspected before and after cleaning, and the observation positions and sizes of a plurality of foreign matters observed in this inspection are stored in a specified manner. By sequentially checking the observation positions of a plurality of foreign matters observed in the above inspection, the increase and decrease in the number and size of the foreign matters at each of the above observation positions are inspected, and the number Pc of the positions where the foreign matter has decreased and the foreign matter change The number of positions Pn where there was no foreign matter, the number Pp of positions where foreign matter increased, the total number of foreign matter Pt before cleaning, the total number of foreign matter Pt 'after cleaning, the number Pg of locations where the size of foreign matter increased, and the foreign matter Number of reduced positions P
As the d, the number and size of foreign matters on the wafer before and after the cleaning are evaluated according to the following calculation formula to evaluate the cleaning performance, so that the cleaning performance Ac = Pc / Pt × 100 (%) Detergency An = Pn / Pt × 100 (%) Contamination particle ratio Ap = Pp / Pt '× 100 (%) Growth ability Ag = Pg / Pn × 100 (%) Degradation ability Ad = Pd / Pn × 100 (%) There is an effect that it is possible to easily separate whether it is washed, not washed, or newly contaminated by the washing process. In addition, by comparing the size of the foreign matter that has not been cleaned before and after cleaning, it is possible to easily inspect whether or not the foreign matter has grown due to cleaning. Since the above-mentioned calculation formula can be used to evaluate the increase / decrease in the number of foreign particles on the wafer and the increase / decrease in the size of the foreign particles, there is an effect that the cleaning method and the performance of the cleaning apparatus can be quantitatively and easily evaluated.
【図１】この発明の一実施例に係わる洗浄能力評価方法
によるウェハ洗浄前の異物観測結果を示す模式図であ
る。FIG. 1 is a schematic diagram showing a foreign matter observation result before wafer cleaning by a cleaning capacity evaluation method according to an embodiment of the present invention.
【図２】この発明の一実施例に係わる洗浄能力評価方法
によるをウェハ洗浄後の異物観測結果を示す模式図であ
る。FIG. 2 is a schematic diagram showing a foreign matter observation result after wafer cleaning by a cleaning ability evaluation method according to an embodiment of the present invention.
【図３】従来の洗浄前のウェハ表面上異物計測結果を示
す模式図である。FIG. 3 is a schematic diagram showing a conventional foreign matter measurement result on a wafer surface before cleaning.
【図４】従来の洗浄後のウェハ表面上異物計測結果を示
す模式図である。FIG. 4 is a schematic diagram showing a result of foreign matter measurement on a wafer surface after conventional cleaning.
Claims (1)
査で観測される複数個の異物の観測位置及び大きさを特
定記憶し、上記洗浄前後それぞれの検査で観測された複
数個の異物の観測位置を順次照合することにより、上記
各観測位置における異物の数及び大きさの増減を検査す
るとともに、異物減少があった位置の数Ｐc ，異物変化
がなかった位置の数Ｐn ，異物増加があった位置の数Ｐ
p ，洗浄前の全異物数Ｐt，洗浄後の全異物数Ｐt’，異
物の大きさが大きくなった位置の数Ｐg ，異物が小さく
なった位置の数Ｐd として、以下に示す算出式に従って
上記洗浄前後のウェハ上異物の数及び大きさの増減評価
を行い、洗浄能力を評価するようにしたことを特徴とす
る洗浄能力評価方法。 洗浄能 Ａc ＝ Ｐc ／ Ｐt × １００ (％) 非洗浄能 Ａn ＝ Ｐn ／ Ｐt × １００ (％) 汚染粒子割合 Ａp ＝ Ｐp ／ Ｐt’× １００ (％) 成長能 Ａg ＝ Ｐg ／ Ｐn × １００ (％) 退化能 Ａd ＝ Ｐd ／ Ｐn × １００ (％)1. A wafer surface is inspected before and after cleaning, and observation positions and sizes of a plurality of foreign matters observed in this inspection are specified and stored, and a plurality of foreign matters observed in each inspection before and after the cleaning are detected. By sequentially checking the observation positions, the increase and decrease in the number and size of foreign substances at each of the above observation positions are checked, and the number of positions where foreign substances have decreased Pc, the number of positions where foreign substances have not changed Pn, and the amount of foreign substances have increased. Number of positions P
p, the total number of foreign matter Pt before cleaning, the total number of foreign matter Pt 'after cleaning, the number Pg of positions where the size of the foreign matter becomes large, and the number Pd of positions where the size of the foreign matter becomes smaller, according to the following calculation formula. A cleaning performance evaluation method, characterized in that the cleaning performance is evaluated by increasing or decreasing the number and size of foreign matters on the wafer before and after cleaning. Cleaning capacity Ac = Pc / Pt × 100 (%) Non-cleaning capacity An = Pn / Pt × 100 (%) Contamination particle ratio Ap = Pp / Pt '× 100 (%) Growth capacity Ag = Pg / Pn × 100 (%) ) Degradation ability Ad = Pd / Pn × 100 (%)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4095085A JP3031053B2 (en) | 1992-04-15 | 1992-04-15 | Cleaning ability evaluation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4095085A JP3031053B2 (en) | 1992-04-15 | 1992-04-15 | Cleaning ability evaluation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05291225A true JPH05291225A (en) | 1993-11-05 |
| JP3031053B2 JP3031053B2 (en) | 2000-04-10 |
Family
ID=14128105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4095085A Expired - Lifetime JP3031053B2 (en) | 1992-04-15 | 1992-04-15 | Cleaning ability evaluation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3031053B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08193961A (en) * | 1994-10-13 | 1996-07-30 | Shimomura Komuten:Kk | Method for measuring stain of floor surface and the like |
| KR19990052284A (en) * | 1997-12-22 | 1999-07-05 | 윤종용 | Defect Evaluation Method of Semiconductor Epiwafer |
| US7155963B2 (en) | 2003-09-04 | 2007-01-02 | Ebara Corporation | Cleaning evaluation method for a substrate |
| JP2011257304A (en) * | 2010-06-10 | 2011-12-22 | Hitachi High-Technologies Corp | Substrate inspection method and device |
| FR3075374A1 (en) * | 2017-12-19 | 2019-06-21 | Saint-Gobain Glass France | IMPROVED GLAZING INSPECTION SYSTEM |
| WO2020137194A1 (en) * | 2018-12-27 | 2020-07-02 | 株式会社Sumco | Semiconductor wafer evaluation method and manufacturing method and semiconductor wafer manufacturing process management method |
| CN113409279A (en) * | 2021-06-24 | 2021-09-17 | 北京车和家信息技术有限公司 | Effect evaluation method, device, equipment and medium of laser radar cleaning system |
| US11181883B2 (en) * | 2016-05-31 | 2021-11-23 | Disco Corporation | Processing apparatus and processing method |
| CN113706046A (en) * | 2021-09-03 | 2021-11-26 | 陈亚军 | Entropy method based laser paint removal effect comprehensive evaluation index system and construction method |
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-
1992
- 1992-04-15 JP JP4095085A patent/JP3031053B2/en not_active Expired - Lifetime
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08193961A (en) * | 1994-10-13 | 1996-07-30 | Shimomura Komuten:Kk | Method for measuring stain of floor surface and the like |
| KR19990052284A (en) * | 1997-12-22 | 1999-07-05 | 윤종용 | Defect Evaluation Method of Semiconductor Epiwafer |
| US7155963B2 (en) | 2003-09-04 | 2007-01-02 | Ebara Corporation | Cleaning evaluation method for a substrate |
| JP2011257304A (en) * | 2010-06-10 | 2011-12-22 | Hitachi High-Technologies Corp | Substrate inspection method and device |
| US11181883B2 (en) * | 2016-05-31 | 2021-11-23 | Disco Corporation | Processing apparatus and processing method |
| CN110178020A (en) * | 2017-12-19 | 2019-08-27 | 法国圣戈班玻璃厂 | Improved glass checks system |
| WO2019122689A1 (en) * | 2017-12-19 | 2019-06-27 | Saint-Gobain Glass France | Improved glazing inspection system |
| FR3075374A1 (en) * | 2017-12-19 | 2019-06-21 | Saint-Gobain Glass France | IMPROVED GLAZING INSPECTION SYSTEM |
| WO2020137194A1 (en) * | 2018-12-27 | 2020-07-02 | 株式会社Sumco | Semiconductor wafer evaluation method and manufacturing method and semiconductor wafer manufacturing process management method |
| JP2020106399A (en) * | 2018-12-27 | 2020-07-09 | 株式会社Sumco | Method for evaluating semiconductor wafer, method for manufacturing the same, and method for managing steps for manufacturing the same |
| US12027428B2 (en) | 2018-12-27 | 2024-07-02 | Sumco Corporation | Semiconductor wafer evaluation method and manufacturing method and semiconductor wafer manufacturing process management method |
| CN113409279A (en) * | 2021-06-24 | 2021-09-17 | 北京车和家信息技术有限公司 | Effect evaluation method, device, equipment and medium of laser radar cleaning system |
| CN113706046A (en) * | 2021-09-03 | 2021-11-26 | 陈亚军 | Entropy method based laser paint removal effect comprehensive evaluation index system and construction method |
| CN113706046B (en) * | 2021-09-03 | 2024-02-27 | 陈亚军 | Comprehensive evaluation method for laser paint removal effect based on entropy method |
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