JPH05283970A - High frequency band surface acoustic wave element - Google Patents
High frequency band surface acoustic wave elementInfo
- Publication number
- JPH05283970A JPH05283970A JP7659392A JP7659392A JPH05283970A JP H05283970 A JPH05283970 A JP H05283970A JP 7659392 A JP7659392 A JP 7659392A JP 7659392 A JP7659392 A JP 7659392A JP H05283970 A JPH05283970 A JP H05283970A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film conductor
- dry etching
- surface acoustic
- acoustic wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は弾性表面波を用いる素子
に係り、特に、微細なパターンを有する高周波帯弾性表
面波素子の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an element using surface acoustic waves, and more particularly to a method of manufacturing a high frequency surface acoustic wave element having a fine pattern.
【０００２】[0002]
【従来の技術】弾性表面波素子では、くし形電極の線幅
が１μｍ以上の素子についてはEMCJ８９−４０，Ｐ３
９，１９８９に記載されているように、ホトレジスト工
程により形成したレジストパターンをマスクとして、り
ん酸系エッチャントなどによるウエットエッチングによ
り作製されている。また、くし形電極の線幅が１μｍ以
下の素子については、'８９ 信学春季全大講演論文集１
−３８０に記載されているように反応性イオンエッチン
グや、マイクロ波プラズマエッチングなどのドライエッ
チング法の適用について検討されている。2. Description of the Related Art In a surface acoustic wave device, a device having a comb-shaped electrode having a line width of 1 μm or more is referred to as EMCJ89-40, P3.
As described in JP-A No. 9,1989, it is produced by wet etching using a phosphoric acid-based etchant or the like, using a resist pattern formed by a photoresist process as a mask. For elements with a comb-shaped electrode with a line width of 1 μm or less, refer to the 1st Lecture of the 89th Annual Meeting of the IEICE Spring Conference 1
-380, the application of dry etching methods such as reactive ion etching and microwave plasma etching has been studied.
【０００３】[0003]
【発明が解決しようとする課題】弾性表面波素子は高周
波になるにつれて、より微細なくし形電極が必要とな
る。しかし、現在広く用いられているウエットエッチン
グ法では線幅が１μｍ以下の素子となると、サイドエッ
チングによる電極線幅の変動が無視出来なくなり、ま
た、より微細なパターンになるにつれてエッチング液が
スペース部にしみこまず、エッチングが進まなくなるな
どの問題が発生するため、１μｍ以下の微細なパターン
の加工にはウエットエッチング法では対応出来ない。The surface acoustic wave device requires finer comb-shaped electrodes as the frequency becomes higher. However, in the wet etching method which is widely used at present, when the line width becomes 1 μm or less, the variation of the electrode line width due to side etching cannot be ignored, and the etching solution becomes a space part as the pattern becomes finer. Since there is a problem that the etching does not progress, the wet etching method cannot deal with the processing of a fine pattern of 1 μm or less.
【０００４】また現在、１μｍ以下の微細なくし形電極
を要する高周波帯弾性表面波素子の電極加工法として適
用が進められているドライエッチング法を用いた場合、
基板損傷の発生が問題となり、素子特性において損失の
増加，中心周波数の変動など多くの悪影響を与える。現
状のドライエッチング法のうち、基板損傷が小さいとい
われているマイクロ波プラズマエッチング法を適用して
も、基板損傷を皆無にすることは難しい。Further, when the dry etching method which is currently being applied as an electrode processing method for a high frequency band surface acoustic wave element requiring a fine comb-shaped electrode of 1 μm or less is used,
The occurrence of substrate damage becomes a problem, which has many adverse effects such as increased loss and fluctuation of center frequency in device characteristics. Among the current dry etching methods, it is difficult to eliminate substrate damage even if the microwave plasma etching method, which is said to cause little substrate damage, is applied.
【０００５】また、ドライエッチング法を適用する場
合、薄膜導体を加工するための反応性ガスとして塩素系
のガスを用いるため薄膜導体の表面に塩素系の反応生成
物が付着し、薄膜導体を腐食するため特別な腐食処理対
策が必要となる。Further, when the dry etching method is applied, since a chlorine-based gas is used as a reactive gas for processing the thin film conductor, a chlorine-based reaction product adheres to the surface of the thin film conductor and corrodes the thin film conductor. Therefore, special corrosion treatment measures are required.
【０００６】本発明の目的は１μｍ以下の微細なパター
ンを精度良く形成するためにドライエッチング法を適用
し、その際の問題点である弾性表面波の素子特性に影響
を与える基板損傷を皆無にし、良好な周波数特性を実現
することにあり、また、その弾性表面波素子を提供する
ことにある。An object of the present invention is to apply a dry etching method in order to form a fine pattern of 1 μm or less with high accuracy, and to eliminate the substrate damage that affects the device characteristics of surface acoustic waves, which is a problem at that time. , To realize good frequency characteristics, and to provide the surface acoustic wave device.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に本発明では以下のような手段を用いる。In order to achieve the above object, the present invention uses the following means.
【０００８】(１) １μｍ以下の微細なパターンを精度
良く形成するためにくし形電極の加工法として、異方性
エッチングであるドライエッチング法を適用する。 (２) ドライエッチング法を適用する際に問題となる圧
電結晶基板の損傷を無くすために、プラズマ発光法など
の終点判定法を用いて、薄膜導体を残した状態でドライ
エッチングを終了させる。 (３) 腐食防止処理を簡単な方法により実現させるため
にドライエッチングのマスクとして用いるレジストパタ
ーンには第１の感光性樹脂層と第２の樹脂層からなる２
層レジスト構造を用い、その第２の樹脂層には薄膜導体
を溶解させる溶液に溶解する性質を持つものを用いる。 (４) ドライエッチング後に圧電結晶基板上に残した薄
膜導体を除去して完全なくし形電極とするために、薄膜
導体を溶解させる溶液に浸漬させてウエットエッチング
を行ない、同時にレジストパターン除去，腐食防止処理
を行う。(1) A dry etching method, which is anisotropic etching, is applied as a processing method of the comb-shaped electrode in order to form a fine pattern of 1 μm or less with high precision. (2) In order to eliminate damage to the piezoelectric crystal substrate, which is a problem when applying the dry etching method, an end point determination method such as a plasma emission method is used to end the dry etching with the thin film conductor left. (3) The resist pattern used as a dry etching mask for realizing the corrosion prevention treatment by a simple method includes a first photosensitive resin layer and a second resin layer.
A layer resist structure is used, and the second resin layer having a property of being dissolved in a solution that dissolves the thin film conductor is used. (4) Wet etching is performed by immersing the thin film conductor in a solution that dissolves the thin film conductor in order to remove the thin film conductor left on the piezoelectric crystal substrate after dry etching to form a completely stripped electrode, and at the same time remove the resist pattern and prevent corrosion. Perform processing.
【０００９】[0009]
【作用】前記したように線幅１μｍ以下の微細なくし形
電極を要する高周波帯弾性表面波素子の電極加工には、
ドライエッチング法の適用が不可欠であるが、この場合
には基板損傷が問題となる。そこで、ドライエッチング
法により薄膜導体の加工を行なう際に、プラズマ発光法
などのエッチング終点判定法により薄膜導体を残した状
態でドライエッチングを終了することにより、圧電結晶
基板表面がプラズマにさらされることが無くなり、圧電
結晶基板に損傷が発生しない作用がある。その後、ドラ
イエッチング時に残した薄膜導体をウエット法を用いて
エッチングすることにより作成した弾性表面波素子の圧
電結晶基板には、全く基板損傷が発生しないという作用
がある。As described above, in the electrode processing of the high frequency band surface acoustic wave element which requires the fine comb-shaped electrode having the line width of 1 μm or less,
Application of the dry etching method is indispensable, but in this case, substrate damage becomes a problem. Therefore, when the thin film conductor is processed by the dry etching method, the surface of the piezoelectric crystal substrate is exposed to the plasma by terminating the dry etching with the thin film conductor left by the etching end point determination method such as the plasma emission method. Is eliminated, and the piezoelectric crystal substrate is not damaged. After that, the piezoelectric crystal substrate of the surface acoustic wave device produced by etching the thin film conductor left at the time of dry etching using a wet method has an effect that no substrate damage occurs.
【００１０】また、レジストパターンが第１の感光性樹
脂層と第２の樹脂層からなり、その第２の樹脂層が薄膜
導体を溶解させる溶液に溶解するという性質を持つこと
を特徴とする２層レジスト構造を用いることにより、ド
ライエッチング後に残した薄膜導体をウエット法により
エッチングする際に、第２の樹脂層が溶解するため第１
の感光性樹脂層が剥離し、レジスト除去も同時に行なえ
るという作用がある。Further, the resist pattern is composed of a first photosensitive resin layer and a second resin layer, and the second resin layer has a property of being dissolved in a solution for dissolving the thin film conductor. By using the layer resist structure, the second resin layer is dissolved when the thin film conductor left after the dry etching is etched by the wet method.
The photosensitive resin layer is peeled off, and the resist can be removed at the same time.
【００１１】さらに、ドライエッチング後に残した薄膜
導体をウエット法によりエッチングする工程において、
薄膜導体の表面層が除去されることで、ドライエッチン
グ時に薄膜導体表面に付着し、薄膜導体の腐食の原因と
なる反応生成物の除去が同時に行なえるため、特別な腐
食防止対策を行なう必要が無いという作用がある。ま
た、この製造方法では電極加工をドライエッチング主体
により行なっていることから１μｍ以下の微細なパター
ンにも適用可能であり、かつ充分な寸法精度も得られる
という作用もある。Further, in the step of etching the thin film conductor left after dry etching by the wet method,
By removing the surface layer of the thin-film conductor, it is possible to remove the reaction products that adhere to the surface of the thin-film conductor during dry etching and cause the corrosion of the thin-film conductor, so it is necessary to take special measures to prevent corrosion. There is no action. Further, in this manufacturing method, since the electrode processing is mainly performed by dry etching, it can be applied to a fine pattern of 1 μm or less, and there is also an effect that sufficient dimensional accuracy can be obtained.
【００１２】また、ドライエッチング後のウエットエッ
チング工程，レジスト除去工程，腐食防止処理工程を兼
ねることが出来、全てを一つの工程として行なえるため
製造工程を簡単に出来る。Further, the wet etching step after the dry etching, the resist removing step, and the corrosion preventing step can be combined, and since all of them can be performed as one step, the manufacturing step can be simplified.
【００１３】[0013]
【実施例】図１は本発明の製造方法を説明する工程図で
ある。まず、図（ａ）に示したように水晶基板などの圧
電結晶基板１の上に薄膜導体２としてＡｌを抵抗加熱蒸
着などの蒸着法により被着した。その上に第２の樹脂層
としてジミチルアセテートを成分とした水溶性の樹脂
を、さらに第２の樹脂層上に第１の感光性樹脂層として
ｉ線用ホトレジストを、通常の回転塗布法により形成し
た。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a process chart for explaining the manufacturing method of the present invention. First, as shown in FIG. 1A, Al was deposited as a thin film conductor 2 on a piezoelectric crystal substrate 1 such as a quartz substrate by a vapor deposition method such as resistance heating vapor deposition. A water-soluble resin containing dimityl acetate as a second resin layer was further formed thereon, and an i-line photoresist was formed as a first photosensitive resin layer on the second resin layer by a conventional spin coating method. Formed.
【００１４】次に、１／５縮小投影露光法などを用いた
通常のホトレジスト工程により、図（ｂ）に示したよう
なホトレジストパターン３′＋４′を形成する。この時
に第２の樹脂層はレジスト現像液に対しても溶解する性
質から第１の感光性樹脂層とともにレジスト現像液によ
りパターン形成され、中間層パターン３′となる。Then, a photoresist pattern 3 '+ 4' as shown in FIG. 1B is formed by a normal photoresist process using a 1/5 reduction projection exposure method or the like. At this time, the second resin layer is patterned by the resist developing solution together with the first photosensitive resin layer due to the property that it is also dissolved in the resist developing solution, and becomes the intermediate layer pattern 3 '.
【００１５】次に、ホトレジストパターン３′＋４′を
マスクとして線幅１μｍ以下の微細なパターンを精度良
く形成するために、マイクロ波プラズマエッチング法な
どのドライエッチング法を適用して薄膜導体２のＡｌ膜
を加工する。この際に、プラズマ発光法などのエッチン
グ終点判定法を用いてエッチングの進行をモニタし、薄
膜導体を残した状態でドライエッチングを終了させ、図
（ｃ）に示したように、圧電基板１の表面が露出しない
ような状態とする。Next, in order to accurately form a fine pattern having a line width of 1 μm or less using the photoresist pattern 3 '+ 4' as a mask, a dry etching method such as a microwave plasma etching method is applied to form an Al of the thin film conductor 2. Process the membrane. At this time, the progress of the etching is monitored by using an etching end point determination method such as a plasma emission method, and the dry etching is terminated with the thin film conductor left, and as shown in FIG. Make sure that the surface is not exposed.
【００１６】次に、圧電基板１上に残した薄膜導体を除
去して、完全なくし形電極とするために薄膜導体を溶解
させる溶液としてりん酸を主成分としたエッチング液に
浸漬させてウエットエッチングを行なう。この時に中間
層パターン３′がエッチング液に溶解するため、ホトレ
ジストパターン４′も中間層パターン３′と同時に剥離
し、ホトレジストパターン３′＋４′が除去される。さ
らに、塩素系ガスを用いたドライエッチングの際に薄膜
導体上に付着して、薄膜導体を腐食する原因となる反応
生成物も除去されるため、腐食処理工程も同時に行なう
事が出来る。Then, the thin film conductor left on the piezoelectric substrate 1 is removed, and the thin film conductor is dissolved by wet etching by immersing it in an etching solution containing phosphoric acid as a main component in order to form a completely comb-shaped electrode. Do. At this time, since the intermediate layer pattern 3'is dissolved in the etching solution, the photoresist pattern 4'is also peeled off at the same time as the intermediate layer pattern 3'and the photoresist patterns 3 '+ 4' are removed. Furthermore, since the reaction product that adheres to the thin film conductor and causes corrosion of the thin film conductor during dry etching using a chlorine-based gas is also removed, the corrosion treatment step can be performed at the same time.
【００１７】図２はドライエッチングを用いた従来技術
による製造方法を説明する工程図である。図（ａ）に示
したように圧電結晶基板１の上に薄膜導体２としてＡｌ
を抵抗加熱蒸着などの蒸着法により被着した。その上に
ホトレジスト４を、通常の回転塗布法により形成する。FIG. 2 is a process diagram for explaining a conventional manufacturing method using dry etching. As the thin film conductor 2 is formed on the piezoelectric crystal substrate 1 as shown in FIG.
Was deposited by a vapor deposition method such as resistance heating vapor deposition. A photoresist 4 is formed thereon by a usual spin coating method.
【００１８】次に、１／５縮小投影露光法などを用いた
通常の露光，現像工程により、図（ｂ）に示したような
ホトレジストパターン４′を形成する。Next, a photoresist pattern 4'as shown in FIG. 1B is formed by the ordinary exposure and development steps using the 1/5 reduction projection exposure method or the like.
【００１９】ホトレジストパターン４′をマスクとして
塩素系ガスを用いたドライエッチングを行なって、薄膜
導体２のＡｌ膜を加工し、図（ｃ）に示したようにくし
形電極２′を形成する。Using the photoresist pattern 4'as a mask, dry etching using a chlorine-based gas is performed to process the Al film of the thin film conductor 2 to form a comb-shaped electrode 2'as shown in FIG.
【００２０】次に、酸素アッシング処理を行ないレジス
トパターン４′の除去を行ない、さらに、ウエット処理
などの腐食処理を行ない、図（ｄ）に示すようなくし形
電極を得る。Next, an oxygen ashing process is performed to remove the resist pattern 4'and a corrosion process such as a wet process is performed to obtain a comb-shaped electrode as shown in FIG.
【００２１】この従来方法ではドライエッチング時に圧
電結晶基板表面がプラズマにさらされることにより、図
に示したように基板表面が削れ、表面が凸凹となる。こ
の基板損傷が弾性表面波の進行を妨げ、損失の悪化，リ
ップルの増大など素子特性に悪影響を与えるという問題
が発生する。In this conventional method, the surface of the piezoelectric crystal substrate is exposed to plasma during dry etching, so that the surface of the substrate is scraped as shown in FIG. This substrate damage hinders the progress of surface acoustic waves, and causes a problem that the device characteristics are adversely affected such as deterioration of loss and increase of ripples.
【００２２】このように従来方法では前記の問題点があ
ったが、本発明の実施例に示した製造方法を用いること
により、ドライエッチング時において圧電結晶基板表面
がプラズマにさらされることが無いため損傷が発生せ
ず、かつ、薄膜導体の大部分をドライエッチングにより
削り、ウエットエッチングを短時間にすることでサイド
エッチングによる寸法変動を低く抑えることが出来るた
め、良好な寸法精度でくし形電極を加工することが出来
る。さらに、レジストパターンとして第２の樹脂層が薄
膜導体のエッチング液に溶けるという性質を持つ２層レ
ジスト構造を用いることにより、ウエットエッチングを
行なう際にレジスト除去工程、及び、腐食防止処理工程
を同時に行なうことが出来、製造工程を非常に簡素にす
る事が出来る。As described above, the conventional method has the above-mentioned problems, but by using the manufacturing method shown in the embodiment of the present invention, the surface of the piezoelectric crystal substrate is not exposed to plasma during dry etching. Since the dimensional fluctuation due to side etching can be suppressed to a low level by removing most of the thin-film conductor by dry etching and shortening wet etching in a short time without causing damage, it is possible to form a comb-shaped electrode with good dimensional accuracy. It can be processed. Further, by using a two-layer resist structure having the property that the second resin layer is soluble in the etching solution for the thin film conductor as the resist pattern, the resist removal step and the corrosion prevention treatment step are simultaneously performed when performing wet etching. The manufacturing process can be greatly simplified.
【００２３】従って、本発明により寸法精度も良好で、
かつ、圧電結晶基板表面に損傷の無い高周波帯弾性表面
波素子を以上に示した簡単な製造方法により実現でき
る。Therefore, according to the present invention, the dimensional accuracy is good,
In addition, the high frequency band surface acoustic wave element having no damage on the surface of the piezoelectric crystal substrate can be realized by the simple manufacturing method described above.
【００２４】[0024]
【発明の効果】本発明によれば、１μｍ以下の微細なパ
ターンをウエットエッチング法の約２倍の加工精度で形
成することが出来、しかも、圧電結晶基板に損傷を与え
ないため、素子損失の劣化が無く、かつ、リップルも低
く抑えた良好な周波数特性を持つ高周波帯弾性表面波素
子を実現できる。According to the present invention, a fine pattern of 1 μm or less can be formed with a processing accuracy about twice as high as that of the wet etching method, and moreover, the piezoelectric crystal substrate is not damaged, resulting in a device loss. It is possible to realize a high frequency surface acoustic wave element having good frequency characteristics without deterioration and having a low ripple.
【００２５】また、本発明の製造方法において、くし形
電極の加工の際のマスクとなるレジストパターンとして
前記したような特徴を持つ２層レジスト構造を用いるこ
とにより、ウエットエッチング，レジスト除去，腐食防
止処理の三つの工程を同時に行なうことが出来るため、
高周波帯弾性表面波素子を非常に簡単な製造工程で実現
できる。Further, in the manufacturing method of the present invention, by using the two-layer resist structure having the above-mentioned characteristics as the resist pattern serving as a mask when processing the comb-shaped electrode, wet etching, resist removal, and corrosion prevention are performed. Since the three steps of processing can be performed simultaneously,
The high frequency band surface acoustic wave device can be realized by a very simple manufacturing process.
【００２６】本発明は、良好な周波数特性を持った、１
μｍ以下の微細なパターンを有する高周波帯弾性表面波
素子を簡素な工程により実現可能とする製造方法を提供
することが出来る。The present invention has a good frequency characteristic of 1
It is possible to provide a manufacturing method capable of realizing a high frequency band surface acoustic wave element having a fine pattern of μm or less by a simple process.
【図１】本発明による製造工程の実施例を示す工程図。FIG. 1 is a process drawing showing an embodiment of a manufacturing process according to the present invention.
【図２】ドライエッチングを適用した従来法による圧電
性基板の損傷を示す工程図。FIG. 2 is a process diagram showing damage to a piezoelectric substrate by a conventional method to which dry etching is applied.
１…圧電結晶基板、１′…基板損傷の発生した圧電結晶
基板、２…薄膜導体、２′…くし形電極、３…第２の樹
脂層、３′…中間層パターン、４…第１の感光性樹脂
層、４′…ホトレジストパターン。DESCRIPTION OF SYMBOLS 1 ... Piezoelectric crystal substrate, 1 '... Piezoelectric crystal substrate with damaged substrate, 2 ... Thin film conductor, 2' ... Comb-shaped electrode, 3 ... Second resin layer, 3 '... Intermediate layer pattern, 4 ... First Photosensitive resin layer, 4 '... Photoresist pattern.
Claims (7)
とも一対のくし形電極によって励振する弾性表面波を用
いる素子において、前記薄膜導体の下部に存在する圧電
結晶基板と前記薄膜導体の無い部分に存在する前記圧電
結晶基板の間に段差が無いこと、もしくは前記薄膜導体
の無い部分の前記圧電結晶基板表面に結晶格子歪が存在
しないことを特徴とする高周波帯弾性表面波素子。1. An element using surface acoustic waves excited by at least a pair of comb-shaped electrodes of a thin film conductor provided on a piezoelectric crystal substrate, wherein the piezoelectric crystal substrate below the thin film conductor and a portion without the thin film conductor. 2. A high frequency band surface acoustic wave device, characterized in that there is no step between the piezoelectric crystal substrates existing in 1., or there is no crystal lattice distortion on the surface of the piezoelectric crystal substrate where there is no thin film conductor.
前記薄膜導体上にホトレジスト工程により形成したレジ
ストパターンをマスクとして、反応性ガスを用いたドラ
イエッチングを行なって前記薄膜導体を加工する際に、
プラズマ発光法などのエッチング終点判定法を用いて前
記薄膜導体を完全に消失させずにドライエッチングを終
了させることを特徴とする高周波帯弾性表面波素子の製
造方法。2. A method of manufacturing an element according to claim 1, wherein
When processing the thin film conductor by dry etching using a reactive gas, using the resist pattern formed by the photoresist process on the thin film conductor as a mask,
A method of manufacturing a high frequency band surface acoustic wave element, characterized in that dry etching is terminated without completely eliminating the thin film conductor by using an etching end point determination method such as a plasma emission method.
記薄膜導体を残すことにより、ドライエッチングによる
前記圧電結晶基板への損傷を皆無にする高周波帯弾性表
面波素子の製造方法。3. The method of manufacturing a high frequency surface acoustic wave device according to claim 2, wherein the thin film conductor is left on the piezoelectric substrate to prevent damage to the piezoelectric crystal substrate due to dry etching.
レジストパターンとして第１の感光性樹脂層と第２の樹
脂層からなる２層レジスト構造を用い、前記第２の樹脂
層が前記薄膜導体を溶解させる溶液に溶解する高周波帯
弾性表面波素子の製造方法。4. The two-layer resist structure comprising a first photosensitive resin layer and a second resin layer as a resist pattern used as a mask according to claim 2 or 3, wherein the second resin layer is the thin film conductor. A method of manufacturing a high frequency band surface acoustic wave device, which is dissolved in a solution which dissolves.
ッチング後に前記薄膜導体を溶解する溶液に浸漬させる
ことにより、前記圧電結晶基板上に残した前記薄膜導体
を除去して、完全なくし形電極とするとともに、２層レ
ジスト構造の下層である前記第２の樹脂層を溶解させて
第１の感光性樹脂層の除去を行なう高周波帯弾性表面波
素子の製造方法。5. The complete comb-shaped electrode according to claim 2, wherein the thin film conductor left on the piezoelectric crystal substrate is removed by immersing it in a solution that dissolves the thin film conductor after dry etching. And a method for manufacturing a high frequency band surface acoustic wave device, wherein the second resin layer, which is the lower layer of the two-layer resist structure, is dissolved to remove the first photosensitive resin layer.
イエッチング後に前記薄膜導体を溶解する溶液に浸漬さ
せることにより、前記圧電結晶基板上に残した前記薄膜
導体を除去して完全なくし形電極とするとともに、前記
薄膜導体の表面層を除去することでドライエッチングに
より前記薄膜導体表面に付着し、前記薄膜導体の腐食の
原因となる反応生成物の除去を行なう高周波帯弾性表面
波素子の製造方法。6. The method according to claim 2, 3, 4 or 5, wherein the thin film conductor left on the piezoelectric crystal substrate is removed by immersing it in a solution that dissolves the thin film conductor after dry etching. A high frequency band surface acoustic wave element that serves as an electrode and removes a reaction product that adheres to the surface of the thin film conductor by dry etching by removing the surface layer of the thin film conductor and removes a reaction product that causes corrosion of the thin film conductor. Production method.
前記製造方法により作製する素子のくし形電極の寸法が
１μｍ以下である高周波帯弾性表面波素子の製造方法。7. The method according to claim 2, 3, 4, 5, or 6,
A method for manufacturing a high frequency band surface acoustic wave device, wherein the size of the comb-shaped electrode of the device manufactured by the above manufacturing method is 1 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7659392A JPH05283970A (en) | 1992-03-31 | 1992-03-31 | High frequency band surface acoustic wave element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7659392A JPH05283970A (en) | 1992-03-31 | 1992-03-31 | High frequency band surface acoustic wave element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05283970A true JPH05283970A (en) | 1993-10-29 |
Family
ID=13609613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7659392A Pending JPH05283970A (en) | 1992-03-31 | 1992-03-31 | High frequency band surface acoustic wave element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05283970A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1520628A1 (en) * | 2003-10-02 | 2005-04-06 | Sony Corporation | Detecting interaction between substances |
| JP2006094472A (en) * | 2004-08-27 | 2006-04-06 | Kyocera Corp | Surface acoustic wave element and method for manufacturing same and communication apparatus |
| US7122938B2 (en) | 2003-05-12 | 2006-10-17 | Shin-Etsu Chemical Co., Ltd | Surface acoustic wave device |
| US7253706B2 (en) | 2004-06-15 | 2007-08-07 | Seiko Epson Corporation | Method for manufacturing surface acoustic wave element, as well as surface acoustic wave element manufactured by the same method |
| JP2010177820A (en) * | 2009-01-27 | 2010-08-12 | Epson Toyocom Corp | Method of manufacturing surface acoustic wave element |
| US7843112B2 (en) * | 2005-09-30 | 2010-11-30 | Seiko Epson Corporation | Surface acoustic wave device, module device, oscillation circuit, and method for manufacturing surface acoustic wave device |
| US8097178B2 (en) | 2004-08-27 | 2012-01-17 | Kyocera Corporation | Surface acoustic wave device and manufacturing method therefor, and communications equipment |
-
1992
- 1992-03-31 JP JP7659392A patent/JPH05283970A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7122938B2 (en) | 2003-05-12 | 2006-10-17 | Shin-Etsu Chemical Co., Ltd | Surface acoustic wave device |
| EP1520628A1 (en) * | 2003-10-02 | 2005-04-06 | Sony Corporation | Detecting interaction between substances |
| US7253706B2 (en) | 2004-06-15 | 2007-08-07 | Seiko Epson Corporation | Method for manufacturing surface acoustic wave element, as well as surface acoustic wave element manufactured by the same method |
| JP2006094472A (en) * | 2004-08-27 | 2006-04-06 | Kyocera Corp | Surface acoustic wave element and method for manufacturing same and communication apparatus |
| US8097178B2 (en) | 2004-08-27 | 2012-01-17 | Kyocera Corporation | Surface acoustic wave device and manufacturing method therefor, and communications equipment |
| US7843112B2 (en) * | 2005-09-30 | 2010-11-30 | Seiko Epson Corporation | Surface acoustic wave device, module device, oscillation circuit, and method for manufacturing surface acoustic wave device |
| US8018122B2 (en) | 2005-09-30 | 2011-09-13 | Epson Toyocom Corporation | Surface acoustic wave device, module device, oscillation circuit, and method for manufacturing surface acoustic wave device |
| JP2010177820A (en) * | 2009-01-27 | 2010-08-12 | Epson Toyocom Corp | Method of manufacturing surface acoustic wave element |
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