JPH05267269A - Method and apparatus for vacuum drying - Google Patents
Method and apparatus for vacuum dryingInfo
- Publication number
- JPH05267269A JPH05267269A JP6173892A JP6173892A JPH05267269A JP H05267269 A JPH05267269 A JP H05267269A JP 6173892 A JP6173892 A JP 6173892A JP 6173892 A JP6173892 A JP 6173892A JP H05267269 A JPH05267269 A JP H05267269A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- drying
- work
- vacuum
- iced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Solid Materials (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、乾燥技術に関し、特
に、たとえば半導体集積回路装置の製造工程で用いられ
るウエハ乾燥技術に適用して有効な技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a drying technique, and more particularly to a technique effectively applied to a wafer drying technique used in a manufacturing process of a semiconductor integrated circuit device, for example.
【０００２】[0002]
【従来の技術】従来の乾燥装置としては、たとえば、ス
ピン乾燥装置およびベーパ乾燥装置が使用されている。2. Description of the Related Art For example, spin dryers and vapor dryers are used as conventional dryers.
【０００３】前記スピン乾燥装置は、半導体ウエハを高
速回転させ、半導体ウエハに付着した水滴を遠心力で除
去する構造となっている。The spin dryer has a structure in which a semiconductor wafer is rotated at a high speed and water droplets attached to the semiconductor wafer are removed by centrifugal force.
【０００４】また、前記ベーパ乾燥装置は、半導体ウエ
ハに付着した水滴をイソプロピルアルコールの蒸気で置
換して乾燥する構造となっている。Further, the vapor drying device has a structure in which water droplets attached to a semiconductor wafer are replaced with vapor of isopropyl alcohol and dried.
【０００５】[0005]
【発明が解決しようとする課題】しかし、前記した従来
のスピン乾燥装置の構造では、半導体ウエハを高速回転
させるため、回転機構部のシールの劣化や静電気の発生
により、半導体ウエハに異物が付着し易いという問題が
あった。However, in the structure of the conventional spin drying apparatus described above, since the semiconductor wafer is rotated at a high speed, foreign matter adheres to the semiconductor wafer due to deterioration of the seal of the rotating mechanism and generation of static electricity. There was a problem that it was easy.
【０００６】また、前記した従来のベーパ乾燥装置の構
造では、半導体ウエハを高清浄化できる点で優れている
が、可燃性のイソプロピルアルコールの蒸気を使用する
ため、火災を発生し易く、危険性が高いという問題があ
った。Further, the structure of the conventional vapor dryer described above is excellent in that the semiconductor wafer can be highly cleaned, but since it uses the vapor of combustible isopropyl alcohol, it easily causes a fire and is dangerous. There was a problem of being expensive.
【０００７】本発明の目的は、ワークを高清浄に乾燥す
ることのできる乾燥技術を提供することにある。An object of the present invention is to provide a drying technique capable of drying a work with high cleanliness.
【０００８】本発明の他の目的は、従来、問題となって
いた乾燥の際の異物の付着をなくし、安全性を向上させ
ることのできる乾燥技術を提供することにある。Another object of the present invention is to provide a drying technique capable of eliminating the adhesion of foreign matter during drying, which has been a problem in the past, and improving safety.
【０００９】本発明の前記ならびにその他の目的と新規
な特徴は、本明細書の記述および添付図面から明らかに
なるであろう。The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
【００１０】[0010]
【課題を解決するための手段】本願において開示される
発明のうち、代表的なものの概要を簡単に説明すれば、
以下の通りである。Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.
【００１１】本発明における真空乾燥装置は、ワークに
付着した水滴もしくは水分を急冷却して氷化させる冷却
手段と、前記氷化したワークの雰囲気を真空状態にする
真空手段とを備えた構造としたものである。The vacuum drying apparatus according to the present invention has a structure including cooling means for rapidly cooling water droplets or water adhering to a work to be frozen, and vacuum means for bringing the atmosphere of the frozen work into a vacuum state. It was done.
【００１２】[0012]
【作用】洗浄済のワークを乾燥させる場合、まず、洗浄
によりワークを清浄に保った状態でワークに付着した水
滴もしくは水分を急冷却して氷化させ、次いで、ワーク
の雰囲気を真空状態にして氷化した氷を昇華させてワー
クを乾燥する。[Function] When the washed work is dried, first, the water droplets or water attached to the work is rapidly cooled to be iced while the work is kept clean by washing, and then the work atmosphere is vacuumed. Sublimate the frozen ice and dry the work.
【００１３】このように、洗浄によりワークに付着した
水滴を急冷却して氷化させ、この氷化した氷を昇華させ
ることにより、ワークの表面にウォーターマークと呼ば
れるシミ等を残さずにワークを高清浄に乾燥することが
できる。As described above, the water droplets attached to the work by the washing are rapidly cooled to be iced, and the iced ice is sublimated to leave the work without leaving a stain called a watermark on the surface of the work. Highly clean and dry.
【００１４】したがって、従来、問題となっていた乾燥
の際の異物の付着をなくし、可燃性のイソプロピルアル
コールの使用を不要にし、安全性を向上させることがで
きる。Therefore, it is possible to improve the safety by eliminating the adhesion of foreign matter during drying, which has been a problem in the past, and by eliminating the use of flammable isopropyl alcohol.
【００１５】[0015]
【実施例】図１は本発明の一実施例である真空乾燥装置
を備えた洗浄乾燥システムを示す断面図である。FIG. 1 is a sectional view showing a cleaning / drying system equipped with a vacuum dryer according to an embodiment of the present invention.
【００１６】半導体ウエハの洗浄乾燥を行う洗浄乾燥シ
ステムは、ケーシングＣの内部に順次隣接して配置され
るローダ部１と、洗浄部２と、乾燥部３と、アンローダ
部４とから構成されている。The cleaning / drying system for cleaning / drying a semiconductor wafer is composed of a loader section 1, a cleaning section 2, a drying section 3 and an unloader section 4 which are sequentially arranged inside the casing C so as to be adjacent to each other. There is.
【００１７】前記ローダ部１は搬送機構または作業者に
より搬送される半導体ウエハ１１を１枚以上収納する収
納治具１０ａがアッパフロア１６上にセットされる構造
となっている。The loader unit 1 has a structure in which a storage jig 10a for storing one or more semiconductor wafers 11 transferred by a transfer mechanism or an operator is set on the upper floor 16.
【００１８】前記洗浄部２は、超純水５をオーバーフロ
ーさせる洗浄槽６がロアフロア１７上に配置され、この
洗浄槽６内の超純水５に搬送機構により半導体ウエハ１
１を浸積させて洗浄を行う構造となっている。In the cleaning unit 2, a cleaning tank 6 for overflowing the ultrapure water 5 is arranged on the lower floor 17, and the semiconductor wafer 1 is transferred to the ultrapure water 5 in the cleaning tank 6 by a transfer mechanism.
1 has been soaked for cleaning.
【００１９】前記アンローダ部４は、搬送機構または作
業者により搬送される高清浄なウエハ収納治具１０ｂが
アッパフロア１６上にセットされており、乾燥が終了し
た高清浄な半導体ウエハ１１は搬送機構により高清浄な
ウエハ収納治具１０ｂに収納される構造となっている。In the unloader section 4, a highly clean wafer storage jig 10b transported by a transport mechanism or an operator is set on the upper floor 16, and a highly clean semiconductor wafer 11 which has been dried is transported by the transport mechanism. The structure is such that the wafer is stored in a highly clean wafer storage jig 10b.
【００２０】本実施例における真空乾燥装置は、前記洗
浄部２に隣接した設けられた乾燥部３に適用したもので
ある。The vacuum drying apparatus in this embodiment is applied to the drying section 3 provided adjacent to the cleaning section 2.
【００２１】すなわち、この乾燥部３は、ロアフロア１
７に配置される乾燥チャンバ３ａを備え、この乾燥チャ
ンバ３ａの開口端部は蓋で覆われ、乾燥中は密閉される
構造となっている。That is, the drying section 3 is the lower floor 1
7 is provided with a drying chamber 3a, the open end of the drying chamber 3a is covered with a lid, and the drying chamber 3a is sealed during drying.
【００２２】また、乾燥チャンバ３ａには、液化Ｎ2 や
液化Ｈｅ等の不活性ガス１２を供給する液化不活性ガス
供給部７および真空ポンプ８が配管１５を介して接続さ
れ、洗浄により半導体ウエハ１１を清浄に保った状態で
半導体ウエハ１１に付着した水滴１３を急冷却して氷化
させ、半導体ウエハ１１の雰囲気を真空状態にして氷化
した氷１４を昇華させて半導体ウエハ１１を乾燥する構
造となっている。Further, a liquefied inert gas supply unit 7 for supplying an inert gas 12 such as liquefied N 2 or liquefied He and a vacuum pump 8 are connected to the drying chamber 3a through a pipe 15, and the semiconductor wafer is cleaned by cleaning. While keeping 11 clean, the water droplets 13 attached to the semiconductor wafer 11 are rapidly cooled to be iced, and the atmosphere of the semiconductor wafer 11 is brought to a vacuum state to sublimate the iced ice 14 to dry the semiconductor wafer 11. It has a structure.
【００２３】次に、本実施例の作用について説明する。Next, the operation of this embodiment will be described.
【００２４】半導体ウエハ１１の洗浄乾燥処理を行う場
合、半導体ウエハ１１を１枚以上収納したウエハ収納治
具１０ａが搬送機構によりローダ部１にセットされると
前記ウエハ収納治具１０ａから半導体ウエハ１１のみが
搬送機構により取り出され、洗浄部２に搬送される。When the semiconductor wafer 11 is washed and dried, when the wafer storage jig 10a containing one or more semiconductor wafers 11 is set in the loader section 1 by the transfer mechanism, the semiconductor wafer 11 is removed from the wafer storage jig 10a. Only the carrier is taken out by the transfer mechanism and transferred to the cleaning unit 2.
【００２５】洗浄部２では、半導体ウエハ１１は超純水
５をオーバーフローさせた洗浄槽６で洗浄され、表面が
清浄化される。洗浄済の半導体ウエハ１１は搬送機構に
より乾燥部３に搬送される。In the cleaning unit 2, the semiconductor wafer 11 is cleaned in the cleaning tank 6 in which the ultrapure water 5 has overflowed to clean the surface. The cleaned semiconductor wafer 11 is transferred to the drying unit 3 by the transfer mechanism.
【００２６】乾燥部３では、乾燥チャンバ３ａに洗浄済
の半導体ウエハ１１が収納され、蓋９で密閉される。半
導体ウエハ１１に付着した水滴１３は、液化不活性ガス
供給部７から供給される不活性ガス１２によって急冷却
され、氷１４となる。In the drying section 3, the cleaned semiconductor wafer 11 is housed in the drying chamber 3a and sealed with the lid 9. The water droplets 13 attached to the semiconductor wafer 11 are rapidly cooled by the inert gas 12 supplied from the liquefied inert gas supply unit 7 to become ice 14.
【００２７】その後、半導体ウエハ１１の雰囲気は真空
ポンプ８によって真空状態にされ、半導体ウエハ１１に
付着した氷１４は昇華され、半導体ウエハ１は乾燥さ
れ、搬送機構によりアンローダ部４に搬送される。After that, the atmosphere of the semiconductor wafer 11 is evacuated by the vacuum pump 8, the ice 14 adhering to the semiconductor wafer 11 is sublimated, the semiconductor wafer 1 is dried, and the semiconductor wafer 1 is transferred to the unloader section 4 by the transfer mechanism.
【００２８】アンローダ部４では、乾燥を終了した高清
浄な半導体ウエハ１１は搬送機構により高清浄なウエハ
収納治具１０ｂに収納され、洗浄乾燥処理を終了する。In the unloader section 4, the highly clean semiconductor wafer 11 that has been dried is stored in the highly clean wafer storage jig 10b by the transfer mechanism, and the cleaning / drying process is completed.
【００２９】このように、半導体ウエハ１１を清浄に保
った状態で半導体ウエハ１１に付着した水滴１３を急冷
却して氷１４とし、半導体ウエハ１１の雰囲気を真空状
態にして半導体ウエハ１１に付着した氷１４を昇華させ
ることにより、半導体ウエハ１１の表面にウォーターマ
ークと呼ばれるシミ等を残さずに半導体ウエハ１１を高
清浄に乾燥することができる。As described above, while the semiconductor wafer 11 is kept clean, the water droplets 13 attached to the semiconductor wafer 11 are rapidly cooled to form ice 14, and the atmosphere of the semiconductor wafer 11 is vacuumed to be attached to the semiconductor wafer 11. By sublimating the ice 14, the semiconductor wafer 11 can be highly cleanly dried without leaving a stain called a watermark on the surface of the semiconductor wafer 11.
【００３０】したがって、従来、問題となっていた乾燥
の際の異物の付着をなくし、可燃性のイソプロピルアル
コールの使用を不要にし、安全性を向上させることがで
きる。Therefore, it is possible to improve the safety by eliminating the adhesion of foreign matter during the drying, which has been a problem in the past, and by eliminating the use of flammable isopropyl alcohol.
【００３１】以上本発明者によってなされた発明を実施
例に基づき具体的に説明したが、本発明は前記実施例に
限定されるものではなく、その要旨を逸脱しない範囲で
種々変更可能であることはいうまでもない。Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Needless to say.
【００３２】たとえば、前記実施例では、洗浄部に超純
水をオーバーフローさせる洗浄槽を設けた場合について
説明したが、これに限らず、純水を蒸気化させ、半導体
ウエハを蒸気洗浄する蒸気洗浄ユニットを設けることも
できる。For example, in the above-described embodiment, the case where the cleaning section is provided with a cleaning tank for overflowing ultrapure water has been described, but the invention is not limited to this, and steam cleaning in which pure water is vaporized and semiconductor wafers are vapor-cleaned Units can also be provided.
【００３３】また、真空ポンプとして、荒引きポンプと
ターボ分子ポンプなどのドライポンプとの組み合わせた
ものを使用し、オイルミストの混入を防止することもで
きる。Further, as the vacuum pump, a combination of a roughing pump and a dry pump such as a turbo molecular pump can be used to prevent mixing of oil mist.
【００３４】また、半導体ウエハとウエハ収納治具とを
一緒に洗浄乾燥しても良い。The semiconductor wafer and the wafer storage jig may be washed and dried together.
【００３５】また、ローダ部と洗浄部との間に無機薬品
や有機溶剤による薬品洗浄部を設け、半導体ウエハの洗
浄乾燥を一貫処理することもできる。Further, a chemical cleaning section using an inorganic chemical or an organic solvent may be provided between the loader section and the cleaning section so that cleaning and drying of the semiconductor wafer can be carried out consistently.
【００３６】以上の説明では、主として本発明者によっ
てなされた発明をその背景となった利用分野である、半
導体ウエハの真空乾燥方法および装置で説明したが、他
の電子部品の真空乾燥方法および装置にも適用できる。In the above description, the invention made by the present inventor was mainly described in the background of the field of application, which is the method and apparatus for vacuum drying semiconductor wafers. However, the method and apparatus for vacuum drying other electronic components are described. Can also be applied to.
【００３７】[0037]
【発明の効果】本願において開示される発明のうち、代
表的なものによって得られる効果を簡単に説明すれば、
以下のとおりである。The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.
It is as follows.
【００３８】(1).ワークに付着した水滴もしくは水分を
急冷却して氷化させ、ワークの雰囲気を真空状態にして
氷化した氷を昇華させてワークを乾燥する真空乾燥方法
および装置としたので、ワークの表面にウォーターマー
クと呼ばれるシミ等を残さずにワークを高清浄に乾燥す
ることができる。(1). A vacuum drying method and apparatus for rapidly cooling water droplets or water adhering to a work to be iced, bringing the atmosphere of the work into a vacuum state and sublimating the iced ice to dry the work. Therefore, the work can be highly cleanly dried without leaving a stain called a watermark on the surface of the work.
【００３９】(2).前記(1) の効果により、従来、問題と
なっていた乾燥の際の異物の付着をなくし、可燃性のイ
ソプロピルアルコールの使用を不要にし、安全性を向上
させることができる。(2) Due to the effect of the above (1), it is possible to eliminate the adhesion of foreign matter during drying, which has been a problem in the past, and to eliminate the use of flammable isopropyl alcohol, thereby improving safety. it can.
【図１】本発明の一実施例である乾燥装置を備えた洗浄
乾燥システムを示す断面図である。FIG. 1 is a cross-sectional view showing a cleaning / drying system including a drying device according to an embodiment of the present invention.
１ ローダ部 ２ 洗浄部 ３ 乾燥部 ３ａ 乾燥チャンバ ４ アンローダ部 ５ 超純水 ６ 洗浄槽 ７ 液化不活性ガス供給部 ８ 真空ポンプ ９ 蓋 １０ａ ウエハ収納治具 １０ｂ ウエハ収納治具 １１ 半導体ウエハ １２ 不活性ガス １３ 水滴 １４ 氷 １５ 配管 １６ アッパフロア １７ ロアフロア Ｃ ケーシング DESCRIPTION OF SYMBOLS 1 loader section 2 cleaning section 3 drying section 3a drying chamber 4 unloader section 5 ultrapure water 6 cleaning tank 7 liquefied inert gas supply section 8 vacuum pump 9 lid 10a wafer storage jig 10b wafer storage jig 11 semiconductor wafer 12 inert Gas 13 Water drops 14 Ice 15 Piping 16 Upper floor 17 Lower floor C Casing
───────────────────────────────────────────────────── フロントページの続き (72)発明者 野口 雄二 東京都小平市上水本町５丁目20番１号 株 式会社日立製作所武蔵工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yuji Noguchi 5-20-1 Kamimizuhonmachi, Kodaira-shi, Tokyo Hitachi, Ltd. Musashi Factory
Claims (3)
冷却して氷化させ、ワークの雰囲気を真空状態にして氷
化した氷を昇華させてワークを乾燥することを特徴とす
る真空乾燥方法。1. A vacuum drying method, characterized in that water droplets or water attached to a work is rapidly cooled to be iced, the atmosphere of the work is brought to a vacuum state to sublimate the iced ice, and the work is dried.
冷却して氷化させる冷却手段と、前記氷化したワークの
雰囲気を真空状態にする真空手段とを備えたことを特徴
とする真空乾燥装置。2. A vacuum drying apparatus comprising: a cooling means for rapidly cooling water droplets or water attached to a work to be frozen, and a vacuum means for bringing an atmosphere of the frozen work into a vacuum state. ..
ことを特徴とする請求項２の真空乾燥装置。3. The vacuum drying apparatus according to claim 2, wherein a liquefied inert gas is used for the cooling means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6173892A JPH05267269A (en) | 1992-03-18 | 1992-03-18 | Method and apparatus for vacuum drying |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6173892A JPH05267269A (en) | 1992-03-18 | 1992-03-18 | Method and apparatus for vacuum drying |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05267269A true JPH05267269A (en) | 1993-10-15 |
Family
ID=13179837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6173892A Pending JPH05267269A (en) | 1992-03-18 | 1992-03-18 | Method and apparatus for vacuum drying |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05267269A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007111269A1 (en) * | 2006-03-24 | 2007-10-04 | Central Research Institute Of Electric Power Industry | Method of removing ice from ice-containing material with use of liquefied substance |
| JP2012015450A (en) * | 2010-07-05 | 2012-01-19 | Three M Innovative Properties Co | Method for drying surface structure |
| JP2012074564A (en) * | 2010-09-29 | 2012-04-12 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate processing method |
| JP2013201302A (en) * | 2012-03-26 | 2013-10-03 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate processing method |
-
1992
- 1992-03-18 JP JP6173892A patent/JPH05267269A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007111269A1 (en) * | 2006-03-24 | 2007-10-04 | Central Research Institute Of Electric Power Industry | Method of removing ice from ice-containing material with use of liquefied substance |
| JP4734406B2 (en) * | 2006-03-24 | 2011-07-27 | 財団法人電力中央研究所 | Method for removing ice from ice-containing material using liquefied material |
| JP2012015450A (en) * | 2010-07-05 | 2012-01-19 | Three M Innovative Properties Co | Method for drying surface structure |
| JP2012074564A (en) * | 2010-09-29 | 2012-04-12 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate processing method |
| US9922848B2 (en) | 2010-09-29 | 2018-03-20 | SCREEN Holdings Co., Ltd. | Apparatus for and method of processing substrate |
| JP2013201302A (en) * | 2012-03-26 | 2013-10-03 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate processing method |
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