JPH05267264A - Manufacture of liquid-crystal display device - Google Patents
Manufacture of liquid-crystal display deviceInfo
- Publication number
- JPH05267264A JPH05267264A JP6291392A JP6291392A JPH05267264A JP H05267264 A JPH05267264 A JP H05267264A JP 6291392 A JP6291392 A JP 6291392A JP 6291392 A JP6291392 A JP 6291392A JP H05267264 A JPH05267264 A JP H05267264A
- Authority
- JP
- Japan
- Prior art keywords
- tft substrate
- cleaning
- tft
- ultrasonic
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thin Film Transistor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Liquid Crystal (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は液晶表示装置の製造方法
に関し、特にＴＦＴ基板の超音波洗浄工程を含む液晶表
示装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a liquid crystal display device, and more particularly to a method of manufacturing a liquid crystal display device including a step of ultrasonically cleaning a TFT substrate.
【０００２】[0002]
【従来の技術】従来、ＴＦＴ基板の洗浄は、図５に示す
よに、高い振動数を有する超音波（８００〜１，２００
ｋＨｚ）振動子５が底面に設置された超音波洗浄槽４に
ＴＦＴ基板１を収納したカセット２を入れ支持台３の上
に乗せて行われていた。この場合、ＴＦＴ基板１は振動
子５に対し、垂直に設置されていた。洗浄装置の洗浄槽
は、複数槽並列に設置され、洗浄槽は、それぞれ水，ア
ルカリ，有機溶剤（フロン，ＩＰＡ等）で満たされてい
る。2. Description of the Related Art Conventionally, as shown in FIG. 5, cleaning of a TFT substrate requires ultrasonic waves (800 to 1,200) having a high frequency.
(KHz) Transducer 5 is placed in the ultrasonic cleaning tank 4 on the bottom surface of which the cassette 2 containing the TFT substrate 1 is placed and placed on the support 3. In this case, the TFT substrate 1 was installed vertically to the vibrator 5. A plurality of cleaning tanks of the cleaning device are installed in parallel, and the cleaning tanks are filled with water, an alkali, and an organic solvent (CFC, IPA, etc.), respectively.
【０００３】超音洗浄は、超音波洗浄槽４の底面に設置
された振動子５より放射された超音波がＴＦＴ基板１上
へ達しＴＦＴ基板１上の粒子をゆり動かす事により除
去，洗浄される。超音波の周波数が８００〜１，２００
ｋＨｚと高いのは、低周波数（２８〜４０ｋＨｚ）では
キャビテーションの発生によりＴＦＴ素子が破壊される
ためである。８００〜１，２００ｋＨｚの周波数ではキ
ャビテーションは、ほとんど発生せず、ＴＦＴ素子は破
壊されない。In the ultrasonic cleaning, ultrasonic waves emitted from a vibrator 5 installed on the bottom surface of an ultrasonic cleaning tank 4 reach the TFT substrate 1 and swing and move particles on the TFT substrate 1 to remove and clean them. It The frequency of ultrasonic waves is 800 to 1,200
The reason why it is as high as kHz is that the TFT element is destroyed due to the occurrence of cavitation at a low frequency (28 to 40 kHz). Cavitation hardly occurs at a frequency of 800 to 1,200 kHz, and the TFT element is not destroyed.
【０００４】[0004]
【発明が解決しようとする課題】超音波は周波数が高く
なるに従って指向性が強くなる。指向性を示す指向性半
減角は、２８ｋＨｚで４１度，８００ｋＨｚで１．３
度，１，０００ｋＨｚで１．０度となる。従って、図５
に示すように、洗浄しようとするＴＦＴ基板１を超音波
振動子５と垂直に設置したのでは、ＴＦＴ素子６面に超
音波がうまく照射されず、したがって、洗浄効果が小さ
いという欠点がある。The directivity of ultrasonic waves becomes stronger as the frequency becomes higher. The directivity half-angle showing directivity is 41 degrees at 28 kHz and 1.3 at 800 kHz.
It becomes 1.0 degree at 1,000 kHz. Therefore, FIG.
As shown in FIG. 3, if the TFT substrate 1 to be cleaned is installed vertically to the ultrasonic transducer 5, the surface of the TFT element 6 is not well irradiated with ultrasonic waves, and therefore the cleaning effect is small.
【０００５】本発明の目的は、洗浄効果の優れた洗浄工
程を含む液晶表示装置の製造方法を提供することにあ
る。An object of the present invention is to provide a method of manufacturing a liquid crystal display device including a cleaning process having an excellent cleaning effect.
【０００６】[0006]
【課題を解決するための手段】本発明は、８００〜１，
２００ｋＨｚの周波数の超音波にて超音波洗浄を行う工
程を含む液晶表示装置の製造方法において、カセットに
収納された複数のＴＦＴ基板をそれぞれの前記ＴＦＴ基
板のＴＦＴ素子表面が隣の前記ＴＦＴ基板の前記超音波
の影にならない角度に超音波振動子側へ傾け超音波洗浄
を行う工程を含む。SUMMARY OF THE INVENTION The present invention is 800-1,
In a method of manufacturing a liquid crystal display device, which includes a step of ultrasonic cleaning with ultrasonic waves having a frequency of 200 kHz, a plurality of TFT substrates housed in a cassette are formed on a TFT element surface of an adjacent TFT substrate. The method includes a step of performing ultrasonic cleaning by inclining to an ultrasonic transducer side at an angle that does not shade the ultrasonic waves.
【０００７】[0007]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will now be described with reference to the drawings.
【０００８】図１は本発明の第１の実施例の超音波洗浄
槽の断面図、図２は図１のＴＦＴ基板の傾きを説明する
部分拡大断面図である。FIG. 1 is a sectional view of an ultrasonic cleaning tank according to a first embodiment of the present invention, and FIG. 2 is a partially enlarged sectional view for explaining the inclination of the TFT substrate of FIG.
【０００９】第１の実施例は、図１に示すように、ＴＦ
Ｔ基板１のＴＦＴ素子面６が超音波振動子５の方向に向
くようにＴＦＴ基板１をθ度傾けて設置する。具体的に
は、超音波洗浄槽４の支持台３をθ度傾ける。これによ
り、支持台３に乗せたカセット２及びカセット２に収納
されたＴＦＴ基板１も振動子５に対しθ度傾く事にな
る。In the first embodiment, as shown in FIG.
The TFT substrate 1 is installed at an angle of θ so that the TFT element surface 6 of the T substrate 1 faces the direction of the ultrasonic transducer 5. Specifically, the support base 3 of the ultrasonic cleaning tank 4 is tilted by θ degrees. As a result, the cassette 2 placed on the support base 3 and the TFT substrate 1 housed in the cassette 2 are also inclined by θ degrees with respect to the vibrator 5.
【００１０】ここで、図２に示すように、傾き角θを大
きくするとＴＦＴ基板１ａの上部が隣りのＴＦＴ基板１
ｂの影になり、超音波が照射されず、洗浄効果は逆に落
ちることになる。従って、ＴＦＴ基板１ａの長さをｌ，
ＴＦＴ基板１ａ，１ｂ間の距離をａとした場合、振動子
５よりの垂線がＴＦＴ基板１ｂの下端とＴＦＴ基板１ａ
の上端に接する時の角度θ＝ｔａｎ-1（ａ／ｌ）前後が
適当となる。Here, as shown in FIG. 2, when the tilt angle θ is increased, the upper portion of the TFT substrate 1a is adjacent to the adjacent TFT substrate 1.
The shadow of b is generated, ultrasonic waves are not irradiated, and the cleaning effect is adversely affected. Therefore, if the length of the TFT substrate 1a is 1,
When the distance between the TFT substrates 1a and 1b is a, the perpendicular line from the vibrator 5 is the lower end of the TFT substrate 1b and the TFT substrate 1a.
An angle of about θ = tan −1 (a / l) when touching the upper end of is appropriate.
【００１１】図３は本発明の第１の実施例の洗浄方法を
説明する洗浄装置の概略構成図である。FIG. 3 is a schematic configuration diagram of a cleaning apparatus for explaining the cleaning method of the first embodiment of the present invention.
【００１２】第１の実施例は、図３に示すように、ＴＦ
Ｔ基板１を収納したカセット２がローダ７より供給させ
ると、搬送ロボット１３により、まず、アルカリ槽８へ
浸漬される。ここで有機汚れを除去したあと搬送ロボッ
ト１３でリンス槽９へ移されＴＦＴ基板１に付着したア
ルカリが除去される。In the first embodiment, as shown in FIG.
When the cassette 2 accommodating the T substrate 1 is supplied from the loader 7, it is first immersed in the alkaline tank 8 by the transfer robot 13. After the organic dirt is removed here, the transfer robot 13 moves the rinse tank 9 to remove the alkali adhering to the TFT substrate 1.
【００１３】次に、超音波洗浄槽４へ移され粒子状の汚
れを除去し、次いで、高速排水リンス槽１０で洗浄さ
れ、最後に、温純水引き上げ乾燥槽１１で乾燥されアン
ローダ１２へ搬送される。リンス槽９，超音波洗浄槽
４，高速排水リンス槽１０はすべて純水で満たされてい
る。Next, the particles are transferred to the ultrasonic cleaning tank 4 to remove particulate dirt, then washed in the high-speed drainage rinse tank 10, and finally dried in the hot pure water pulling and drying tank 11 and conveyed to the unloader 12. .. The rinse tank 9, the ultrasonic cleaning tank 4, and the high-speed drainage rinse tank 10 are all filled with pure water.
【００１４】このような構成を有する洗浄装置において
ＴＦＴ基板１の洗浄を行なう。The cleaning of the TFT substrate 1 is performed in the cleaning device having such a structure.
【００１５】ここで、図２に示すｌ＝３５０ｍｍ（幅３
００ｍｍ），ａ＝７ｍｍ，θ＝０度（従来例）及び１度
の条件で洗浄を行なった結果、３μｍ以上の粒子の除去
数は θ＝０度で１０個（従来例） θ＝１度で６２個 であり、ＴＦＴ基板１を超音波振動子５の方へ傾ける事
により粒子（汚れ）が効率よく除去された。Here, l = 350 mm (width 3 shown in FIG. 2
00 mm), a = 7 mm, θ = 0 degree (conventional example), and as a result of cleaning under conditions of 1 degree, the number of particles of 3 μm or more removed is 10 at θ = 0 degree (conventional example) θ = 1 degree The number was 62 and the particles (dirt) were efficiently removed by tilting the TFT substrate 1 toward the ultrasonic vibrator 5.
【００１６】図４は本発明の第２の実施例を説明する超
音波洗浄槽の断面図である。FIG. 4 is a sectional view of an ultrasonic cleaning tank for explaining the second embodiment of the present invention.
【００１７】超音波洗浄においては定在波の発生により
洗浄むらが生じる（定在波のピッチλ／２は水中２５℃
で８００ｋＨｚの場合１ｍｍ，１，０００ｋＨｚの場合
０．７ｍｍ）。第２の実施例は、この洗浄むらを防止す
るため、図４に示すように、揺動機構を付けた例であ
る。In ultrasonic cleaning, uneven cleaning occurs due to the occurrence of standing waves (the standing wave pitch λ / 2 is 25 ° C. in water).
At 800 kHz, 1 mm, and at 1,000 kHz, 0.7 mm). The second embodiment is an example in which a swinging mechanism is attached as shown in FIG. 4 in order to prevent the uneven cleaning.
【００１８】カセット２が置かれた支持台３は揺動用カ
ム１４に接しており揺動用カム１４の回転に伴い上下動
する。従ってＴＦＴ基板１も上下動する。ここで、上下
動の距離は、定在波のピッチλ／２以上にする。The support base 3 on which the cassette 2 is placed is in contact with the swing cam 14 and moves up and down as the swing cam 14 rotates. Therefore, the TFT substrate 1 also moves up and down. Here, the vertical movement distance is set to a pitch of the standing wave λ / 2 or more.
【００１９】この結果第１の実施例と同じ条件で粒子の
除去数は、 θ＝１度で１０５個 となり、第１の実施例より効率よく除去されていること
が確認できた。As a result, under the same conditions as in the first embodiment, the number of particles removed was 105 at θ = 1 degree, and it was confirmed that the particles were removed more efficiently than in the first embodiment.
【００２０】[0020]
【発明の効果】以上説明したように本発明は、ＴＦＴ基
板１のＴＦＴの素子面６を振動子５方向へ傾ける事によ
り、超音波がＴＦＴ素子面６に効率よく照射され、従っ
て、付着した粒子（汚れ）が効率よく除去され、清浄な
ＴＦＴ素子面６が得られるという効果を有する。As described above, according to the present invention, by inclining the element surface 6 of the TFT of the TFT substrate 1 toward the vibrator 5, ultrasonic waves are efficiently irradiated to the TFT element surface 6 and thus adhered. This has the effect that particles (dirt) are efficiently removed and a clean TFT element surface 6 is obtained.
【図１】本発明の第１の実施例の超音波洗浄槽の断面図
である。FIG. 1 is a sectional view of an ultrasonic cleaning tank according to a first embodiment of the present invention.
【図２】図１のＴＦＴ基板の傾きを説明する部分拡大断
面図である。FIG. 2 is a partially enlarged cross-sectional view illustrating an inclination of the TFT substrate of FIG.
【図３】本発明の第１の実施例の洗浄方法を説明する洗
浄装置の概略構成図である。FIG. 3 is a schematic configuration diagram of a cleaning device for explaining a cleaning method according to a first embodiment of the present invention.
【図４】本発明の第２の実施例の超音波洗浄槽の断面図
である。FIG. 4 is a sectional view of an ultrasonic cleaning tank according to a second embodiment of the present invention.
【図５】従来の超音波洗浄槽の一例の断面図である。FIG. 5 is a sectional view of an example of a conventional ultrasonic cleaning tank.
１，１ａ，１ｂ ＴＦＴ基板 ２ カセット ３ 支持台 ４ 超音波洗浄槽 ５ 振動子 ６ ＴＦＴ素子面 ７ ローダ ８ アルカリ槽 ９ リンス槽 １０ 高速排水リンス槽 １１ 温純水引き上げ乾燥槽 １２ アンローダ １３ 搬送ロボット １４ 揺動用カム 1, 1a, 1b TFT substrate 2 Cassette 3 Support 4 Ultrasonic cleaning tank 5 Transducer 6 TFT element surface 7 Loader 8 Alkali tank 9 Rinsing tank 10 High-speed drainage rinse tank 11 Hot deionized water drying tank 12 Unloader 13 Transfer robot 14 Swing cam
Claims (1)
音波にて超音波洗浄を行う工程を含む液晶表示装置の製
造方法において、カセットに収納された複数のＴＦＴ基
板をそれぞれの前記ＴＦＴ基板のＴＦＴ素子表面が隣の
前記ＴＦＴ基板の前記超音波の影にならない角度に超音
波振動子側へ傾け超音波洗浄を行う工程を含むことを特
徴とする液晶表示装置の製造方法。1. A method of manufacturing a liquid crystal display device, which comprises a step of ultrasonic cleaning with ultrasonic waves having a frequency of 800 to 1,200 kHz, wherein a plurality of TFT substrates housed in a cassette are provided on each of the TFT substrates. A method for manufacturing a liquid crystal display device, comprising the step of performing ultrasonic cleaning by inclining the element surface toward the ultrasonic transducer side at an angle that does not shade the ultrasonic waves of the adjacent TFT substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6291392A JP2871938B2 (en) | 1992-03-19 | 1992-03-19 | Manufacturing method of liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6291392A JP2871938B2 (en) | 1992-03-19 | 1992-03-19 | Manufacturing method of liquid crystal display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05267264A true JPH05267264A (en) | 1993-10-15 |
| JP2871938B2 JP2871938B2 (en) | 1999-03-17 |
Family
ID=13213974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6291392A Expired - Fee Related JP2871938B2 (en) | 1992-03-19 | 1992-03-19 | Manufacturing method of liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2871938B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001060573A (en) * | 1999-04-27 | 2001-03-06 | Applied Materials Inc | Semiconductor substrate cleaning system |
| JP2008046391A (en) * | 2006-08-17 | 2008-02-28 | Seiko Epson Corp | Alloy separation and recovery method |
| JP2014517155A (en) * | 2011-06-24 | 2014-07-17 | エーシーエム リサーチ （シャンハイ） インコーポレーテッド | Method and apparatus for forming a uniform metal film on a substrate |
| WO2015162892A1 (en) * | 2014-04-22 | 2015-10-29 | 株式会社Ｊｏｌｅｄ | Method for manufacturing organic el display panel and system for manufacturing organic el display panels |
| JP2016210018A (en) * | 2015-04-30 | 2016-12-15 | 富士ゼロックス株式会社 | Cleaning device and droplet discharge device |
| JP2020147841A (en) * | 2019-03-16 | 2020-09-17 | 株式会社不二越 | Vacuum degrease washing method and vacuum degrease washing station |
-
1992
- 1992-03-19 JP JP6291392A patent/JP2871938B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001060573A (en) * | 1999-04-27 | 2001-03-06 | Applied Materials Inc | Semiconductor substrate cleaning system |
| JP2010010718A (en) * | 1999-04-27 | 2010-01-14 | Applied Materials Inc | Semiconductor substrate cleaning system |
| JP2008046391A (en) * | 2006-08-17 | 2008-02-28 | Seiko Epson Corp | Alloy separation and recovery method |
| JP2014517155A (en) * | 2011-06-24 | 2014-07-17 | エーシーエム リサーチ （シャンハイ） インコーポレーテッド | Method and apparatus for forming a uniform metal film on a substrate |
| US9666426B2 (en) | 2011-06-24 | 2017-05-30 | Acm Research (Shanghai) Inc. | Methods and apparatus for uniformly metallization on substrates |
| WO2015162892A1 (en) * | 2014-04-22 | 2015-10-29 | 株式会社Ｊｏｌｅｄ | Method for manufacturing organic el display panel and system for manufacturing organic el display panels |
| JP2016210018A (en) * | 2015-04-30 | 2016-12-15 | 富士ゼロックス株式会社 | Cleaning device and droplet discharge device |
| JP2020147841A (en) * | 2019-03-16 | 2020-09-17 | 株式会社不二越 | Vacuum degrease washing method and vacuum degrease washing station |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2871938B2 (en) | 1999-03-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6276370B1 (en) | Sonic cleaning with an interference signal | |
| US6311702B1 (en) | Megasonic cleaner | |
| JP2696017B2 (en) | Cleaning device and cleaning method | |
| US5579792A (en) | Apparatus for uniform cleaning of wafers using megasonic energy | |
| US7040330B2 (en) | Method and apparatus for megasonic cleaning of patterned substrates | |
| US20040069319A1 (en) | Method and apparatus for cleaning a substrate using megasonic power | |
| JP2002093765A (en) | Method and equipment for cleaning substrate | |
| KR20110091813A (en) | Methods and apparatus for cleaning semiconductor wafers | |
| JP2002529923A (en) | Continuous cleaning megasonic tank with transducer with reduced duty cycle | |
| JPH05267264A (en) | Manufacture of liquid-crystal display device | |
| US6209555B1 (en) | Substrate cassette for ultrasonic cleaning | |
| KR100952087B1 (en) | Method and apparatus for megasonic cleaning of patterned substrates | |
| JP3474495B2 (en) | Substrate cleaning method and cleaning apparatus | |
| JPH07328573A (en) | Washing method and apparatus | |
| US20020069895A1 (en) | Megasonic bath | |
| JP2004190043A (en) | Device and method for producing substrate | |
| US7165565B2 (en) | Megasonic wafer cleaning tank with reflector for improved wafer edge cleaning | |
| JPH05243203A (en) | Ultrasonic washer | |
| JPS61194727A (en) | Washing apparatus | |
| JP2005142309A (en) | Substrate cleaning method, apparatus, and system | |
| JP2004146439A (en) | Substrate cleaning method and device thereof | |
| JPH10154677A (en) | Method and apparatus for manufacturing semiconductor integrated circuit | |
| JPH04196219A (en) | Ultrasonic cleaning tank | |
| JP4249604B2 (en) | Substrate processing apparatus and substrate processing method | |
| JP2001170584A (en) | Ultrasonic treatment apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19981124 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080108 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090108 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100108 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110108 Year of fee payment: 12 |
|
| LAPS | Cancellation because of no payment of annual fees |