JPH05182945A - Treating device - Google Patents
Treating deviceInfo
- Publication number
- JPH05182945A JPH05182945A JP34591191A JP34591191A JPH05182945A JP H05182945 A JPH05182945 A JP H05182945A JP 34591191 A JP34591191 A JP 34591191A JP 34591191 A JP34591191 A JP 34591191A JP H05182945 A JPH05182945 A JP H05182945A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cleaning
- liquid
- cleaning apparatus
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基板の洗浄，乾燥を行
う洗浄装置に係り、特にガラス基板，シリコン基板を洗
浄対象とし、液体を洗浄媒体として洗浄，乾燥を行う洗
浄装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning device for cleaning and drying a substrate, and more particularly to a cleaning device for cleaning a glass substrate or a silicon substrate and a liquid as a cleaning medium.
【０００２】[0002]
【従来の技術】半導体製造工程および液晶表示素子製造
工程においては、それらの機能を得るために各種の機能
膜が形成され、さらにそれらの膜に対し、パターン形成
が成される。パターンは機能膜上にレジスト膜を形成
し、その膜にフォトリソグラフィ技術によりパターンを
形成し、そのパターンをエッチングにより機能膜に形成
する。これらの機能膜やレジスト膜に欠陥が存在した場
合、半導体や液晶表示素子としての性能が得られない。
それ故これらの膜形成の前には欠陥の原因となる異物，
汚染を除去する目的で洗浄が行われる。洗浄方法はその
除去対象，目的により各種の洗浄液，手段がとり得る。2. Description of the Related Art In a semiconductor manufacturing process and a liquid crystal display device manufacturing process, various functional films are formed in order to obtain their functions, and pattern formation is performed on these films. As the pattern, a resist film is formed on the functional film, a pattern is formed on the film by a photolithography technique, and the pattern is formed on the functional film by etching. If there is a defect in these functional film or resist film, the performance as a semiconductor or a liquid crystal display device cannot be obtained.
Therefore, before forming these films, foreign matter that causes defects,
Cleaning is performed for the purpose of removing contamination. As the cleaning method, various cleaning liquids and means can be used depending on the object to be removed and the purpose.
【０００３】一例として図２に示す液晶表示素子用ガラ
ス基板洗浄の従来技術では、図に示していない搬送系に
てガラス基板を４ａから４ｂ，４ｃ，４ｄ，４ｅと搬送
を行いつつ、スプレーノズル７より吐出する洗浄液にて
洗浄を行った後、エアナイフ７より吹き出される高速エ
アにて基板表面の洗浄液を除去して乾燥させるものであ
った。同様の処理は、特開平１−２９３１７７号公報記
載の洗浄方法にも示されている。As an example, in a conventional technique for cleaning a glass substrate for a liquid crystal display device shown in FIG. 2, a spray nozzle is used while transporting a glass substrate from 4a to 4b, 4c, 4d, 4e by a transport system (not shown). After cleaning with the cleaning liquid discharged from No. 7, the cleaning liquid on the substrate surface was removed by high-speed air blown out from the air knife 7 and dried. Similar processing is also shown in the cleaning method described in JP-A-1-293177.
【０００４】[0004]
【発明が解決しようとする課題】洗浄の目的は上記の様
に欠陥となる異物，汚染の除去である。それ故、洗浄乾
燥の工程において新たにこれらの欠陥の原因を発生させ
てはならない。特に洗浄に用いた液体を除去する乾燥工
程において、基板と液体の濡れ性により欠陥が発生する
可能性があった。すなわち基板と液体の濡れ性が悪い状
態で、吐出した高速エアで乾燥を行うエアナイフ乾燥
や、基板を高速回転させて発生する遠心力にて乾燥を行
うスピン乾燥を行った場合や、処理液体から基板を低速
で引き上げることで重力にて液体を除去する乾燥を行っ
た場合、乾燥中に基板上の水の膜が水滴となり、基板上
の水の厚さが不均一となる。それ故、乾燥後基板上に点
状に水滴が残存する要因となる。これらの水滴が存在し
た場合、基板材質の水滴への溶出，再析出や、基板と水
滴と大気の界面において基板の酸化が生じ、酸化成分が
析出する可能性がある。これらの水滴や析出物が存在し
た場合、いわゆる乾燥じみとなり欠陥の原因となる。そ
れ故洗浄乾燥を行う場合、洗浄の媒体として用いる洗浄
液と基板との濡れ性が良好である必要がある。The purpose of cleaning is to remove foreign matter and contamination that are defective as described above. Therefore, new causes of these defects should not be generated in the washing and drying process. In particular, in the drying step of removing the liquid used for cleaning, defects may occur due to the wettability between the substrate and the liquid. That is, when the wettability between the substrate and the liquid is poor, air knife drying for drying with discharged high-speed air, spin drying for drying by centrifugal force generated by rotating the substrate at high speed, or for treating liquid When the substrate is pulled at a low speed and dried to remove the liquid by gravity, the water film on the substrate becomes water drops during the drying, and the thickness of the water on the substrate becomes uneven. Therefore, it becomes a factor that water droplets remain in spots on the substrate after drying. When these water droplets are present, there is a possibility that the substrate material may be eluted into the water droplets and re-precipitated, or the substrate may be oxidized at the interface between the substrate, the water droplets, and the atmosphere, and an oxidative component may be deposited. The presence of these water droplets or precipitates causes so-called dry bleeding and causes defects. Therefore, when cleaning and drying are performed, it is necessary that the cleaning liquid used as a cleaning medium and the substrate have good wettability.
【０００５】しかし、従来技術においては洗浄液との濡
れ性の悪い基板に対する処理が成されていなかった。そ
のため、従来技術では洗浄乾燥の処理を行う前に、別の
装置で表面の改質を行っていた。例えば基板表面をエッ
チングし、表面を改質する液に基板を浸漬する方法が取
られていた。これらの液は洗浄乾燥装置に対し、腐食等
のダメージを与える為、一貫の装置とする事は困難であ
った。However, in the prior art, the treatment of the substrate having poor wettability with the cleaning liquid has not been performed. Therefore, in the prior art, the surface was modified by another device before the cleaning and drying treatment. For example, a method of etching the substrate surface and immersing the substrate in a liquid that modifies the surface has been taken. Since these liquids cause damage such as corrosion to the washing / drying device, it is difficult to make the device consistent.
【０００６】本発明の目的は、洗浄液との濡れ性の悪い
基板を対象とした一貫の洗浄乾燥装置を供給することに
ある。An object of the present invention is to provide a consistent cleaning / drying apparatus for substrates having poor wettability with a cleaning liquid.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するた
め、基板の表面を改質し洗浄液との濡れ性を向上させる
処理を行う表面処理槽を、洗浄乾燥槽の前工程に設けた
ものである。洗浄液との濡れ性を向上させる処理とし
て、酸素を含む雰囲気中にて基板に紫外線を照射する場
合と、酸素を含む雰囲気中にて放電を起こし、その雰囲
気に基板を曝すを起こす場合を採り得る。In order to achieve the above object, a surface treatment tank for modifying a surface of a substrate to improve wettability with a cleaning liquid is provided in a step before a cleaning / drying tank. is there. As the treatment for improving the wettability with the cleaning liquid, it is possible to irradiate the substrate with ultraviolet rays in an atmosphere containing oxygen, or to generate a discharge in the atmosphere containing oxygen and expose the substrate to the atmosphere. ..
【０００８】[0008]
【作用】基板と洗浄液が濡れるという現象は、基板表面
の分子と洗浄液の分子の間に引力が存在する事である。
例えば洗浄液として水を用い、基板表面分子が極性基を
持つ分子の場合、水分子と極性基の間に水分子の水素を
介在した水素結合による引力が生じ、基板表面に水分子
が吸着される。吸着した水分子にさらに他の水分子が水
素結合により結合し、基板の上に水の層が形成される。
この現象により、基板は水に濡れた状態となる。The phenomenon that the substrate and the cleaning liquid get wet means that an attractive force exists between the molecules on the substrate surface and the cleaning liquid.
For example, when water is used as the cleaning liquid and the substrate surface molecule is a molecule having a polar group, an attractive force is generated by the hydrogen bond of the water molecule between the water molecule and the polar group, and the water molecule is adsorbed on the substrate surface. .. Another water molecule is further bonded to the adsorbed water molecule by a hydrogen bond to form a water layer on the substrate.
Due to this phenomenon, the substrate becomes wet with water.
【０００９】一方、濡れ性の悪い表面では、結合の基と
なる極性基が存在しない又は部分的にしか存在しない
為、基板と洗浄液との間の引力が弱く、基板上に水の層
を均一に形成する事が出来ない。例えば部分的に水分子
が基板に吸着した場合、その水分子上のみに他の水分子
が吸着するため基板上に水分子は水滴として付着する。On the other hand, on the surface having poor wettability, since the polar group serving as a bonding group does not exist or only partially exists, the attractive force between the substrate and the cleaning liquid is weak and a water layer is evenly formed on the substrate. Can not be formed. For example, when water molecules are partially adsorbed on the substrate, other water molecules are adsorbed only on the water molecules, so that the water molecules are attached as water droplets on the substrate.
【００１０】酸素を含む雰囲気中にて基板に紫外線を照
射した場合、紫外線の光エネルギーによる基板表面分子
の解裂や、酸素と紫外線との光化学反応により生成する
オゾン及び酸素ラジカルによる表面分子の酸化反応によ
り、基板表面に水酸基，カルボニル基等の極性基が形成
される。又、酸素を含む雰囲気中にて放電を起こし、そ
の雰囲気に基板を曝すを起こす場合も、放電により生成
する酸素ラジカルにより同様な極性基が形成される。そ
れによって、極性基の少ない濡れ性の悪い基板表面に極
性基を形成する事が出来るため、基板と洗浄液との濡れ
性を向上させる事が出来る。When the substrate is irradiated with ultraviolet rays in an atmosphere containing oxygen, the surface molecules of the substrate are cleaved by the light energy of the ultraviolet rays, and the surface molecules are oxidized by ozone and oxygen radicals generated by the photochemical reaction between oxygen and ultraviolet rays. By the reaction, polar groups such as hydroxyl group and carbonyl group are formed on the surface of the substrate. Also, when a discharge is generated in an atmosphere containing oxygen and the substrate is exposed to the atmosphere, similar polar groups are formed by oxygen radicals generated by the discharge. As a result, a polar group can be formed on the surface of the substrate having a small number of polar groups and poor wettability, so that the wettability between the substrate and the cleaning liquid can be improved.
【００１１】[0011]
【実施例】以下、本発明の実施例を図１，図３〜図４に
より説明する。Embodiments of the present invention will be described below with reference to FIGS. 1 and 3 to 4.
【００１２】図１に示す本発明の洗浄装置は、表面処理
層１と洗浄槽２と乾燥槽３より構成されている。基板４
ａは図に記載されていない搬送系により４ａの位置から
４ｂ，４ｃ，４ｄ，４ｅへと搬送される。The cleaning apparatus of the present invention shown in FIG. 1 comprises a surface treatment layer 1, a cleaning tank 2 and a drying tank 3. Board 4
A is conveyed from the position of 4a to 4b, 4c, 4d, 4e by a conveying system not shown in the figure.
【００１３】表面処理槽１の内部には紫外線灯５が配置
されている。紫外線灯５からは図３に示すように紫外線
８が照射される。本実施例では請求項３記載の発明を示
しているが、この表面処理槽１内部に請求項４に示す酸
素を含む雰囲気中で放電を起こす機能を配置する場合も
ある。An ultraviolet lamp 5 is arranged inside the surface treatment tank 1. Ultraviolet rays 8 are emitted from the ultraviolet lamp 5 as shown in FIG. In the present embodiment, the invention according to claim 3 is shown, but the surface treatment tank 1 may be provided with the function of causing discharge in the atmosphere containing oxygen according to claim 4 in some cases.
【００１４】洗浄槽２内部にはスプレーノズル６が配置
され、洗浄液が吐出される。本実施例では請求項７記載
の発明を示しているが、洗浄液に基板４ｃを浸漬して洗
浄を行う機構や、その浸漬液に超音波を付加して洗浄を
行う機構や、ブラシによる擦り洗浄を行う機構や、高圧
水を吐出して洗浄を行う機構を配置する事も可能であ
る。図３には吐出液に超音波を付加し、超音波励振され
た洗浄液で基板４ｇを洗浄する機構を示している。超音
波スプレー１１には振動板１０が配置されている。超音
波スプレー１１に供給される純水９は振動板１０により
超音波を付加され超音波励振水となる。付加される超音
波の周波数は、一例として１．１ＭＨｚであるが、洗浄
基板の汚染状態や振動板１０の発振効率により洗浄に好
ましい周波数を設定し得る。本実施例では洗浄液として
純水９を用いているが基板の汚染状態により洗剤や薬品
を用いることが出来る。洗剤や薬品を用いた場合は、そ
の処理の後に洗浄液を純水に置換する機構が必要とな
る。A spray nozzle 6 is arranged inside the cleaning tank 2 to discharge the cleaning liquid. In this embodiment, the invention according to claim 7 is shown. A mechanism for immersing the substrate 4c in the cleaning liquid for cleaning, a mechanism for applying ultrasonic waves to the immersion liquid for cleaning, and a scrubbing cleaning with a brush. It is also possible to arrange a mechanism for performing the cleaning or a mechanism for discharging high pressure water for cleaning. FIG. 3 shows a mechanism for applying ultrasonic waves to the discharge liquid and cleaning the substrate 4g with the ultrasonically excited cleaning liquid. A diaphragm 10 is arranged on the ultrasonic spray 11. The pure water 9 supplied to the ultrasonic spray 11 is subjected to ultrasonic waves by the vibrating plate 10 and becomes ultrasonically excited water. The frequency of the added ultrasonic wave is 1.1 MHz as an example, but a preferable frequency for cleaning can be set depending on the contamination state of the cleaning substrate and the oscillation efficiency of the diaphragm 10. In this embodiment, pure water 9 is used as the cleaning liquid, but detergents or chemicals can be used depending on the contamination state of the substrate. When a detergent or chemical is used, a mechanism for replacing the cleaning liquid with pure water after the treatment is required.
【００１５】乾燥槽３の内部にはエアナイフノズル７が
配置されている。エアナイフ７にエア１２を供給するこ
とでエアナイフ７の先端より高速のエアが吐出される。
本実施例は請求項１６記載の発明を示しているが、基板
４ｈを高速で回転させ、生じる遠心力で基板上の水を除
去する乾燥機構や、基板４ｈを垂直に保持し、温水に浸
漬した後基板を低速で引き上げ、重力で付着水を引き落
すとともに、温水より得られる基板の潜熱で基板を乾燥
させる機構を設ける事も可能である。An air knife nozzle 7 is arranged inside the drying tank 3. By supplying the air 12 to the air knife 7, high-speed air is discharged from the tip of the air knife 7.
This embodiment shows the invention according to claim 16, but the substrate 4h is rotated at a high speed and a drying mechanism for removing the water on the substrate by the generated centrifugal force, or the substrate 4h is held vertically and immersed in warm water. After that, it is possible to pull up the substrate at a low speed, drop the adhered water by gravity, and provide a mechanism for drying the substrate by latent heat of the substrate obtained from warm water.
【００１６】本実施例においては液晶表示素子用ガラス
基板の洗浄を示しているが、半導体用シリコンウェハ基
板の洗浄も可能である。又、本実施例においては、基板
を水平に搬送しながら処理を行う事例を示しているが、
基板を各処理槽において固定して処理したり、基板を垂
直に搬送して処理する場合もあり得る。本実施例のガラ
ス基板洗浄においては、その基板の種類を限定するもの
ではないが、本発明の効果より特にガラス基板上に疎水
性膜が形成されている基板や、その疎水性膜上に更に他
種の膜が形成されている基板の洗浄に有効である。In this embodiment, cleaning of the glass substrate for liquid crystal display element is shown, but cleaning of the silicon wafer substrate for semiconductor is also possible. In addition, in the present embodiment, an example is shown in which processing is performed while the substrate is transported horizontally.
The substrate may be fixed in each processing tank for processing, or the substrate may be conveyed vertically for processing. In the glass substrate cleaning of the present embodiment, the type of the substrate is not limited, but from the effect of the present invention, a substrate on which a hydrophobic film is formed on the glass substrate, or the hydrophobic film is further formed on the substrate. It is effective for cleaning a substrate on which another type of film is formed.
【００１７】一例としては、液晶表示素子の液晶分子の
配向を定める配向膜の塗布された基板が挙げられる。配
向膜はポリイミド系の有機物であり、洗浄液である水に
対して濡れ性の悪い膜である。又、疎水性膜上に更に他
種の膜が形成されている基板の例としては、ガラス基板
上にカラーフィルタ膜が形成され、更にその上に透明電
極膜が形成された基板が挙げられる。カラーフィルタ
は、有機質又は無機質の染料又は顔料を、有機質のバイ
ンダによりガラス基板上に膜形成したものである。これ
らの材質は疎水性である。透明電極膜は、例えば酸化イ
ンジウムに錫を添加した物質を膜形成したものである。
この膜は酸化物であるため、水分子との間に水素結合を
形成することが出来る。それ故、この膜は親水性である
が、表面に有機物が付着している場合はその有機物によ
り親水性が疎外され、疎水性となる。カラーフィルタ膜
上の透明電極膜では、下地のカラーフィルタの有機質バ
インダを構成する有機分子の一部が、透明電極膜の結晶
粒界等の隙間から透明電極膜の上に染み出る為、表面に
有機質が付着している。そのため、カラーフィルタ上の
透明電極膜は疎水性となる。本発明はこれらの洗浄に特
に有効である。As an example, there is a substrate coated with an alignment film that determines the alignment of liquid crystal molecules of a liquid crystal display element. The alignment film is a polyimide-based organic substance and has poor wettability with respect to water as a cleaning liquid. Further, as an example of the substrate in which another kind of film is further formed on the hydrophobic film, there is a substrate in which a color filter film is formed on a glass substrate and a transparent electrode film is further formed thereon. The color filter is formed by forming a film of an organic or inorganic dye or pigment on a glass substrate with an organic binder. These materials are hydrophobic. The transparent electrode film is, for example, a film formed of a material obtained by adding tin to indium oxide.
Since this film is an oxide, it can form hydrogen bonds with water molecules. Therefore, although this film is hydrophilic, when an organic substance is attached to the surface, the organic substance removes the hydrophilicity and makes it hydrophobic. In the transparent electrode film on the color filter film, some of the organic molecules that make up the organic binder of the underlying color filter seep out on the surface of the transparent electrode film through gaps such as crystal grain boundaries of the transparent electrode film. Organic matter is attached. Therefore, the transparent electrode film on the color filter becomes hydrophobic. The present invention is particularly effective for cleaning these.
【００１８】以下に本発明の洗浄装置による洗浄とその
効果の実施例を図３と図４により示す。Examples of cleaning by the cleaning apparatus of the present invention and its effects will be shown below with reference to FIGS. 3 and 4.
【００１９】基板４ｆは図に記載されていない搬送系に
より４ｆから４ｇ，４ｈへと搬送される。基板４ｆには
紫外線灯５から紫外線８が照射される。紫外線灯５は低
圧水銀灯であり、紫外線８には、２５４ｎｍと１８５ｎ
ｍの波長の紫外線が含まれている。The substrate 4f is transported from 4f to 4g, 4h by a transport system (not shown). The substrate 4f is irradiated with ultraviolet rays 8 from the ultraviolet lamp 5. The ultraviolet lamp 5 is a low-pressure mercury lamp, and the ultraviolet rays 8 are 254 nm and 185 n
It contains ultraviolet rays of wavelength m.
【００２０】図４に、基板４ｆを紫外線灯５の下を搬送
して紫外線８を照射した時の、処理回数と純水の濡れ性
向上の効果を示す。図４に示す基板の表面には、カラー
フィルタ膜とその上に酸化インジウム膜が形成されてい
る。紫外線灯５は１４０Ｗの低圧水銀灯であり、基板４
ｆは紫外線灯５から１０ｍｍ離れた点を、毎秒３０ｍｍ
で通過する。図４における接触角は、基板４ｆ上に微量
の純水を滴下して形成される水滴の、基板との接点にお
ける角度を示している。又、濡れ性は基板４ｆに純水を
塗布した時の水滴の有無を示しており、水滴が形成され
ない場合を「○」と、形成された場合を「×」と表現し
ている。FIG. 4 shows the number of treatments and the effect of improving the wettability of pure water when the substrate 4f is transported under the ultraviolet lamp 5 and irradiated with the ultraviolet rays 8. A color filter film and an indium oxide film thereon are formed on the surface of the substrate shown in FIG. The ultraviolet lamp 5 is a 140 W low-pressure mercury lamp, and the substrate 4
f is 30 mm per second at a point 10 mm away from the UV lamp 5
Pass by. The contact angle in FIG. 4 indicates the angle at the contact point with the substrate of a water droplet formed by dropping a small amount of pure water on the substrate 4f. The wettability indicates the presence or absence of water droplets when pure water is applied to the substrate 4f. The case where no water droplets are formed is expressed as "O", and the case where water drops are formed is expressed as "X".
【００２１】初期状態（処理回数０回）において接触角
は約８０度を示している。この角度は有機物の接触角度
に相当しており、この角度より基板の表面には有機物が
付着している事が示されている。有機質に本発明の処理
を行う場合、その酸化作用により有機質が二酸化炭素や
水等の気体に酸化され、基板表面から除去される。それ
故、処理回数が増加するにつれ基板表面の有機質が減少
し、接触角度は減少する。この接触角度低減の速度は、
付着した有機質の量により変動する。本例では、基板表
面の有機質を除去するためには、少なくとも処理回数２
０回以上を必要とすると推定される。一方、純水の濡れ
性は１回の処理で向上されている。これは、処理数１回
では有機質は除去されないものの、その表面に酸化によ
る極性基が形成された事を示している。この極性基に純
水が水素結合し、さらにその純水に他の純水が水素結合
する事で、基板上に水の膜が形成されて基板の濡れ性が
向上される。本発明の目的は濡れ性の悪い基板の洗浄前
処理であり、この紫外線による処理は紫外線灯５を１回
通過することで達成される。In the initial state (the number of processing times is 0), the contact angle is about 80 degrees. This angle corresponds to the contact angle of the organic substance, and this angle indicates that the organic substance is attached to the surface of the substrate. When the treatment of the present invention is applied to an organic substance, the oxidizing action oxidizes the organic substance into a gas such as carbon dioxide or water and removes it from the substrate surface. Therefore, as the number of treatments increases, the organic matter on the substrate surface decreases and the contact angle decreases. The speed of this contact angle reduction is
It varies depending on the amount of the attached organic matter. In this example, in order to remove the organic matter on the surface of the substrate, at least 2 times of treatment
It is estimated that 0 or more times are required. On the other hand, the wettability of pure water is improved by one treatment. This indicates that although the organic matter was not removed by the single treatment, polar groups were formed on the surface by oxidation. Pure water is hydrogen-bonded to this polar group, and another pure water is hydrogen-bonded to the pure water, whereby a water film is formed on the substrate and the wettability of the substrate is improved. The object of the present invention is a pretreatment for cleaning a substrate having poor wettability, and the treatment with ultraviolet rays is achieved by passing the ultraviolet lamp 5 once.
【００２２】紫外線処理により表面の濡れ性が向上した
基板４ｆは、次に純水洗浄が行われる。洗浄部に搬送さ
れた基板４ｇには超音波スプレーによる洗浄が行われ
る。超音波スプレーノズル１１に供給される純水９は、
超音波スプレーノズル内の振動板１０により超音波が付
与される。基板４ｇにはこの超音波で励振された純水が
吐出される。一例としてこの超音波の周波数は１ＭＨｚ
であるが、この周波数から生じる加速度により、基板４
ｇと基板４ｇに付着した異物の界面に純水が侵入し、基
板４ｇから異物が除去される。濡れ性の向上した基板で
はこの純水の侵入が容易である為、紫外線処理によりこ
の洗浄により異物の除去も効果的になる。The substrate 4f whose surface wettability is improved by the ultraviolet treatment is then washed with pure water. The substrate 4g transported to the cleaning unit is cleaned by ultrasonic spraying. The pure water 9 supplied to the ultrasonic spray nozzle 11 is
Ultrasonic waves are applied by the vibrating plate 10 in the ultrasonic spray nozzle. Pure water excited by the ultrasonic waves is discharged onto the substrate 4g. As an example, the frequency of this ultrasonic wave is 1 MHz
However, due to the acceleration generated from this frequency, the substrate 4
g and the foreign matter adhering to the substrate 4g penetrate pure water to remove the foreign matter from the substrate 4g. Since the deionized water can easily enter the substrate having improved wettability, the cleaning by the ultraviolet treatment can effectively remove the foreign matter.
【００２３】洗浄を終えた基板４ｇは乾燥部に搬送され
る。基板４ｈはエアナイフノズル７の間を通過する。エ
アナイフノズル７にはエア１２が供給される。供給され
たエアはエアナイフノズルの狭いスリットから吐出さ
れ、高速のエアとなる。一例としてこの時の流速は、毎
秒５０ｍ以上となる。この高速エアにより基板４ｈ上の
純水は除去される。紫外線照射により基板は濡れ性が向
上している為、高速エアによる乾燥の際、付着水は水滴
となることなく均一に基板より除去出来る。The cleaned substrate 4g is conveyed to the drying section. The substrate 4h passes between the air knife nozzles 7. Air 12 is supplied to the air knife nozzle 7. The supplied air is discharged from the narrow slit of the air knife nozzle and becomes high-speed air. As an example, the flow velocity at this time is 50 m or more per second. Pure water on the substrate 4h is removed by this high-speed air. Since the substrate has improved wettability due to ultraviolet irradiation, the adhered water can be uniformly removed from the substrate without forming water droplets when dried by high-speed air.
【００２４】[0024]
【発明の効果】本発明によれば、乾燥じみを作ることな
く基板を洗浄乾燥することが出来るため、半導体や液晶
表示素子作成の工程において、洗浄の不良による欠陥や
性能不良、生産性の低下を防止する事が出来る。又、洗
浄乾燥を一貫ラインで行えるため、オフラインの表面改
質装置が不用となる。According to the present invention, since the substrate can be washed and dried without producing a drying stain, defects and performance defects due to poor washing and a decrease in productivity are caused in the process of producing a semiconductor or a liquid crystal display element. Can be prevented. Further, since the washing and drying can be performed on an integrated line, an off-line surface modification device is unnecessary.
【図１】本発明の一実施例の洗浄装置の断面図である。FIG. 1 is a cross-sectional view of a cleaning device according to an embodiment of the present invention.
【図２】従来技術による洗浄装置の断面図である。FIG. 2 is a cross-sectional view of a conventional cleaning device.
【図３】本発明の一実施例の洗浄装置の斜視図である。FIG. 3 is a perspective view of a cleaning device according to an embodiment of the present invention.
【図４】本発明の洗浄装置による表面改質効果を示す図
である。FIG. 4 is a diagram showing a surface modification effect by the cleaning apparatus of the present invention.
１…表面処理槽、２…洗浄槽、３…乾燥槽、４ａ，４
ｂ，４ｃ，４ｄ，４ｅ，４ｆ，４ｇ，４ｈ…ガラス基
板、５…紫外線灯、６…スプレーノズル、７…エアナイ
フノズル、８…紫外線、９…純水、１０…振動板、１１
…超音波スプレーノズル、１２…エア。1 ... Surface treatment tank, 2 ... Cleaning tank, 3 ... Drying tank, 4a, 4
b, 4c, 4d, 4e, 4f, 4g, 4h ... glass substrate, 5 ... ultraviolet lamp, 6 ... spray nozzle, 7 ... air knife nozzle, 8 ... ultraviolet light, 9 ... pure water, 10 ... diaphragm, 11
… Ultrasonic spray nozzle, 12… Air.
Claims (25)
去する洗浄装置において、液体による処理の前に基板の
表面改質処理を行う手段を有することを特徴とした洗浄
装置。1. A cleaning device for treating a substrate with a liquid and then removing the liquid, comprising a means for performing a surface modification treatment on the substrate before the treatment with the liquid.
理による濡れ性改善であることを特徴とする請求項１記
載の洗浄装置。2. The cleaning apparatus according to claim 1, wherein the surface modification treatment of the substrate is an improvement of wettability by oxidation treatment of the substrate surface.
中にて基板に紫外線を照射することを特徴とする請求項
１または請求項２記載の洗浄装置。3. The cleaning apparatus according to claim 1, wherein the substrate is irradiated with ultraviolet rays in an atmosphere containing oxygen as the surface modification of the substrate.
中にて放電を起こし、その雰囲気に基板を曝すことを特
徴とする請求項１または請求項２記載の洗浄装置。4. The cleaning apparatus according to claim 1, wherein as the surface modification of the substrate, a discharge is generated in an atmosphere containing oxygen and the substrate is exposed to the atmosphere.
特徴とする請求項１〜請求項４のいずれかに記載の洗浄
装置。5. The cleaning apparatus according to any one of claims 1 to 4, wherein the treatment performed on the substrate with a liquid is cleaning.
を浸漬する洗浄を含むことを特徴とする請求項１〜請求
項５のいずれかに記載の洗浄装置。6. The cleaning apparatus according to any one of claims 1 to 5, wherein the cleaning process for cleaning the substrate with the liquid includes cleaning for immersing the substrate in the liquid.
に吐出する洗浄を含むことを特徴とする請求項１〜請求
項６のいずれかに記載の洗浄装置。7. The cleaning apparatus according to claim 1, wherein the cleaning process for cleaning the substrate with the liquid includes cleaning for discharging the liquid onto the substrate.
された液体を基板に接触させる洗浄を含むことを特徴と
する請求項１〜請求項７のいずれかに記載の洗浄装置。8. The cleaning apparatus according to any one of claims 1 to 7, wherein the cleaning process of cleaning the substrate with a liquid includes cleaning in which the ultrasonically excited liquid is brought into contact with the substrate.
る擦り洗浄を含むことを特徴とする請求項１〜請求項８
のいずれかに記載の洗浄装置。9. The cleaning process for cleaning the substrate with a liquid includes rubbing cleaning with a brush.
The cleaning device according to any one of 1.
基板に吐出する洗浄を含むことを特徴とする請求項１〜
請求項９のいずれかに記載の洗浄装置。10. The cleaning process for cleaning a substrate with a liquid includes cleaning for discharging high-pressure water onto the substrate.
The cleaning device according to claim 9.
ことを特徴とする請求項１〜請求項１０のいずれかに記
載の洗浄装置。11. The cleaning apparatus according to claim 1, wherein water is used as a liquid for cleaning.
液体を用いることを特徴とする請求項１〜請求項１１の
いずれかに記載の洗浄装置。12. The cleaning apparatus according to claim 1, wherein a liquid containing a detergent is used as the liquid for performing the cleaning process.
液体を用いることを特徴とする請求項１〜請求項１２の
いずれかに記載の洗浄装置。13. The cleaning apparatus according to claim 1, wherein a liquid containing a chemical is used as the liquid for performing the cleaning process.
る処理を行う工程を含むことを特徴とする請求項１〜請
求項１３のいずれかに記載の洗浄装置。14. The cleaning apparatus according to claim 1, further comprising a step of replacing the cleaning treatment liquid with water after the cleaning treatment.
特徴とする請求項１〜請求項１４のいずれかに記載の洗
浄装置。15. The cleaning apparatus according to claim 1, wherein the treatment for removing the liquid is drying.
基板に吐出することで基板表面の液体を除去することを
特徴とする請求項１〜請求項１５のいずれかに記載の洗
浄装置。16. The cleaning apparatus according to claim 1, wherein the drying process for removing the liquid removes the liquid on the surface of the substrate by discharging high-speed air onto the substrate.
回転することで発生する遠心力にて、基板表面の液体を
除去することを特徴とする請求項１〜請求項１５のいず
れかに記載の洗浄装置。17. The drying process for removing a liquid removes the liquid on the substrate surface by a centrifugal force generated by rotating the substrate at a high speed. The cleaning device described.
ら基板を低速で引き上げることで重力にて、基板表面の
液体を除去することを特徴とする請求項１〜請求項１５
のいずれかに記載の洗浄装置。18. The drying process for removing a liquid removes the liquid on the surface of the substrate by gravity by pulling up the substrate from the processing liquid at a low speed.
The cleaning device according to any one of 1.
あることを特徴とする請求項１〜請求項１８のいずれか
に記載の洗浄装置。19. The cleaning apparatus according to claim 1, wherein the substrate to be processed is a silicon wafer substrate.
を特徴とする請求項１〜請求項１８のいずれかに記載の
洗浄装置。20. The cleaning apparatus according to claim 1, wherein the substrate to be processed is a glass substrate.
ガラス基板であることを特徴とする請求項２０記載の洗
浄装置。21. The cleaning apparatus according to claim 20, wherein the glass substrate to be processed is a glass substrate for a liquid crystal display element.
に膜が形成されていることを特徴とする請求項２１記載
の洗浄装置。22. The cleaning apparatus according to claim 21, wherein a film is formed on a glass substrate for a liquid crystal display element to be processed.
膜が有機質を含む材質で構成されていることを特徴とす
る請求項２２記載の洗浄装置。23. The cleaning apparatus according to claim 22, wherein the film formed on the glass substrate for a liquid crystal display element is made of a material containing an organic substance.
含む材質の膜の上面に無機質の膜が形成されていること
を特徴とする請求項２２記載の洗浄装置。24. The cleaning apparatus according to claim 22, wherein an inorganic film is formed on the upper surface of the film made of a material containing an organic material on the glass substrate for a liquid crystal display element.
う工程を含むことを特徴とする請求項１〜請求項２４の
いずれかに記載の洗浄装置。25. The cleaning apparatus according to claim 1, further comprising a step of performing a cleaning process before forming a film on a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34591191A JPH05182945A (en) | 1991-12-27 | 1991-12-27 | Treating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34591191A JPH05182945A (en) | 1991-12-27 | 1991-12-27 | Treating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05182945A true JPH05182945A (en) | 1993-07-23 |
Family
ID=18379835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34591191A Pending JPH05182945A (en) | 1991-12-27 | 1991-12-27 | Treating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05182945A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997019204A1 (en) * | 1995-11-07 | 1997-05-29 | Seiko Epson Corporation | Method and apparatus for surface treatment |
| JP2001281672A (en) * | 2000-03-31 | 2001-10-10 | Fujitsu Ltd | Method of manufacturing liquid crystal display device |
| US6799588B1 (en) * | 1999-07-21 | 2004-10-05 | Steag Microtech Gmbh | Apparatus for treating substrates |
| US6893688B2 (en) | 2000-09-06 | 2005-05-17 | Seiko Epson Corporation | Method and apparatus for fabricating electro-optical device and method and apparatus for fabricating liquid crystal panel |
| US7141461B2 (en) | 1993-12-02 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| JP2010212690A (en) * | 2009-03-06 | 2010-09-24 | Imec | Method for physical force assisted cleaning with reduced damage |
| CN103008311A (en) * | 2012-12-18 | 2013-04-03 | 江苏宇迪光学股份有限公司 | Ultraviolet-based dry type cleaning method |
| KR20160088283A (en) | 2013-11-22 | 2016-07-25 | 노무라마이크로사이엔스가부시키가이샤 | Uv-transmitting-substrate cleaning device and cleaning method |
| CN110121761A (en) * | 2016-12-27 | 2019-08-13 | 应用材料公司 | System and method for soaking substrate |
-
1991
- 1991-12-27 JP JP34591191A patent/JPH05182945A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7141461B2 (en) | 1993-12-02 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| WO1997019204A1 (en) * | 1995-11-07 | 1997-05-29 | Seiko Epson Corporation | Method and apparatus for surface treatment |
| US6799588B1 (en) * | 1999-07-21 | 2004-10-05 | Steag Microtech Gmbh | Apparatus for treating substrates |
| JP2001281672A (en) * | 2000-03-31 | 2001-10-10 | Fujitsu Ltd | Method of manufacturing liquid crystal display device |
| US6893688B2 (en) | 2000-09-06 | 2005-05-17 | Seiko Epson Corporation | Method and apparatus for fabricating electro-optical device and method and apparatus for fabricating liquid crystal panel |
| JP2010212690A (en) * | 2009-03-06 | 2010-09-24 | Imec | Method for physical force assisted cleaning with reduced damage |
| CN103008311A (en) * | 2012-12-18 | 2013-04-03 | 江苏宇迪光学股份有限公司 | Ultraviolet-based dry type cleaning method |
| KR20160088283A (en) | 2013-11-22 | 2016-07-25 | 노무라마이크로사이엔스가부시키가이샤 | Uv-transmitting-substrate cleaning device and cleaning method |
| CN110121761A (en) * | 2016-12-27 | 2019-08-13 | 应用材料公司 | System and method for soaking substrate |
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