JPH05182869A - Solid electrolytic capacitor and manufacture thereof - Google Patents
Solid electrolytic capacitor and manufacture thereofInfo
- Publication number
- JPH05182869A JPH05182869A JP35965891A JP35965891A JPH05182869A JP H05182869 A JPH05182869 A JP H05182869A JP 35965891 A JP35965891 A JP 35965891A JP 35965891 A JP35965891 A JP 35965891A JP H05182869 A JPH05182869 A JP H05182869A
- Authority
- JP
- Japan
- Prior art keywords
- phosphorus ions
- electrolytic capacitor
- solid electrolytic
- thickness
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は耐湿性を向上した固体電
解コンデンサ及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid electrolytic capacitor having improved moisture resistance and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】固体電解コンデンサは、一般的に、タン
タル等の微粉末からなる焼結体に陽極酸化皮膜、二酸化
マンガン等の半導体層、カーボン層及び銀ペースト層を
順次設けた構成になっている。2. Description of the Related Art Generally, a solid electrolytic capacitor has a structure in which an anodized film, a semiconductor layer such as manganese dioxide, a carbon layer and a silver paste layer are sequentially provided on a sintered body made of fine powder such as tantalum. There is.
【０００３】陽極酸化皮膜は、硝酸やリン酸等の溶液中
に焼結体を浸漬し、化成電圧を印加して形成する。特
に、硝酸化成液は火花電圧が比較的に低いために、高圧
品にはリン酸化成液を用いて化成している。The anodic oxide film is formed by immersing the sintered body in a solution of nitric acid, phosphoric acid or the like and applying a chemical conversion voltage. In particular, since the nitric acid conversion liquid has a relatively low spark voltage, a phosphorylated conversion liquid is used for high-pressure products.
【０００４】[0004]
【発明が解決しようとする課題】しかし、陽極酸化皮膜
中、特に弁作用金属側から少なくとも１／２の厚さの部
分にりんイオンが含まれていると、耐湿性が低下し、そ
のなかでも特に漏れ電流（以下ＬＣという）が増加する
欠点があることがわかった。However, when phosphorus ions are contained in the anodized film, particularly in the portion having a thickness of at least 1/2 from the valve metal side, the moisture resistance is lowered, and among them, In particular, it has been found that there is a drawback that leakage current (hereinafter referred to as LC) increases.
【０００５】本発明の目的は、以上の欠点を改良し、耐
湿性を向上できる固体電解コンデンサ及びその製造方法
を提供するものである。An object of the present invention is to provide a solid electrolytic capacitor which is capable of improving the above-mentioned drawbacks and moisture resistance and a method for manufacturing the same.
【０００６】[0006]
【課題を解決するための手段】請求項１の発明は、上記
の目的を達成するために、弁作用金属に陽極酸化皮膜を
設けた固体電解コンデンサにおいて、少なくとも弁作用
金属側から１／２の厚さの部分にりんイオンを含まず、
１／２の厚さから外側の部分にりんイオンを含む陽極酸
化皮膜を設けることを特徴とする固体電解コンデンサを
提供するものである。In order to achieve the above object, a solid electrolytic capacitor having a valve action metal provided with an anodic oxide coating has at least a half of the valve action metal side. Does not contain phosphorus ions in the thickness part,
It is intended to provide a solid electrolytic capacitor characterized in that an anodized film containing phosphorus ions is provided on an outer portion from a thickness of ½.
【０００７】また、請求項２の発明は、弁作用金属を化
成して陽極酸化皮膜を形成した固体電解コンデンサの製
造方法において、りんイオンを含まない化成液を用い最
大化成電圧の少なくとも１／２以上の電圧で化成する工
程と、この工程後にりんイオンを含む化成液を用い最大
化成電圧まで化成する工程とを行うことを特徴とする固
体電解コンデンサの製造方法を提供するものである。The invention of claim 2 is a method for manufacturing a solid electrolytic capacitor in which a valve metal is formed to form an anodic oxide film, and at least half of the maximum formation voltage is used by using a formation solution containing no phosphorus ion. It is intended to provide a method for producing a solid electrolytic capacitor, which comprises performing a step of forming with the above voltage and a step of forming a maximum forming voltage using a forming solution containing phosphorus ions after this step.
【０００８】[0008]
【作用】陽極酸化皮膜をりんイオンを含む領域と含まな
い領域とに分け、少なくとも弁作用金属から１／２の厚
さの部分をりんイオンを含まない領域とすることによ
り、りんイオンによる耐湿性の低下を少なくできる。Function: The anodic oxide film is divided into a region containing phosphorus ions and a region not containing phosphorus ions, and at least a portion having a thickness of 1/2 from the valve metal is made a region not containing phosphorus ions, whereby moisture resistance by phosphorus ions is improved. Can be reduced.
【０００９】[0009]
【実施例】以下、本発明を実施例に基づいて説明する。
図１は本発明実施例に用いるコンデンサ素子の断面図を
示す。１はタンタルの微粉末からなる焼結体である。２
はこの焼結体１から引き出したタンタルのリード線であ
る。３は焼結体１を化成して形成した陽極酸化皮膜であ
る。そしてこの陽極酸化皮膜３は、タンタルの弁作用金
属側から少なくとも１／２の厚さを占めるりんイオンを
含まない部分４とそれ以外の外側のりんイオンを含む部
分５とから形成されている。６は陽極酸化皮膜３に積層
した二酸化マンガンからなる半導体層である。７は半導
体層に積層したカーボン層である。８はカーボン層に積
層した銀ペースト層である。９は銀ペースト層８に半田
１０付けした陰極リード線である。EXAMPLES The present invention will be described below based on examples.
FIG. 1 shows a sectional view of a capacitor element used in an embodiment of the present invention. Reference numeral 1 is a sintered body made of fine powder of tantalum. Two
Is a tantalum lead wire drawn from the sintered body 1. 3 is an anodized film formed by forming the sintered body 1. The anodic oxide film 3 is formed of a phosphorus ion-free portion 4 occupying at least ½ the thickness of tantalum from the valve metal side, and a portion 5 other than the outside portion containing phosphorus ions. Reference numeral 6 is a semiconductor layer made of manganese dioxide laminated on the anodic oxide film 3. Reference numeral 7 is a carbon layer laminated on the semiconductor layer. Reference numeral 8 is a silver paste layer laminated on the carbon layer. Reference numeral 9 denotes a cathode lead wire having solder 10 attached to the silver paste layer 8.
【００１０】次に、上記実施例の製造方法を説明する。
先ず、タンタルの微粉末を、タンタルのリード線２を引
き出した状態で圧縮成形し、真空熱処理して焼結体１を
形成する。焼結体１を形成後、硝酸溶液等のりんイオン
を含まない化成液に浸漬し、最大化成電圧の少なくとも
１／２以上の電圧で化成する。次に、焼結体１を、りん
酸溶液等のりんイオンを含む化成液に浸漬し、最大化成
電圧まで化成する。すなわち、化成を２段階に分けて行
い陽極酸化皮膜３を形成する。陽極酸化皮膜３を形成
後、焼結体１を、硝酸マンガン溶液に浸漬して液を含浸
し、焼成及び再化成して二酸化マンガン層６を形成す
る。二酸化マンガン層６を形成後にカーボンを塗布して
カーボン層７を形成する。カーボン層７を形成後に、銀
ペーストを塗布して銀ペースト層８を形成する。銀ペー
スト層８を形成後、これに陰極リード線９を半田１０付
けする。なお、化成は３段階以上に分けて行ってもよ
い。Next, the manufacturing method of the above embodiment will be described.
First, fine powder of tantalum is compression-molded in a state where the lead wire 2 of tantalum is pulled out and heat-treated in vacuum to form a sintered body 1. After the sintered body 1 is formed, it is dipped in a phosphoric acid-free chemical conversion solution such as a nitric acid solution, and chemical conversion is performed at a voltage of at least ½ of the maximum chemical conversion voltage. Next, the sintered body 1 is dipped in a chemical conversion solution containing phosphorus ions, such as a phosphoric acid solution, to perform chemical conversion to a maximum chemical conversion voltage. That is, formation is performed in two steps to form the anodic oxide film 3. After forming the anodic oxide film 3, the sintered body 1 is immersed in a manganese nitrate solution to be impregnated with the solution, and is baked and re-formed to form a manganese dioxide layer 6. After forming the manganese dioxide layer 6, carbon is applied to form a carbon layer 7. After forming the carbon layer 7, a silver paste is applied to form a silver paste layer 8. After forming the silver paste layer 8, the cathode lead wire 9 is soldered to the silver paste layer 8. The formation may be performed in three or more stages.
【００１１】以下に、タンタル固体電解コンデンサにつ
いて、実施例、従来例及び比較例に分けて、プレッシャ
ークッカーテストを行いＬＣの変化を求めた。実施例等
の化成条件は表１の通りとし、ＬＣの変化を表２に示し
た。なお、テストの条件は、温度１２１℃、湿度１００
％、気圧２atm、 時間０〜４４hrとする。Hereinafter, the tantalum solid electrolytic capacitor was divided into an example, a conventional example and a comparative example, and a pressure cooker test was performed to obtain a change in LC. Table 1 shows the chemical conversion conditions of Examples and the like, and Table 2 shows the changes in LC. The test conditions are a temperature of 121 ° C and a humidity of 100.
%, Atmospheric pressure 2 atm, time 0 to 44 hr.
【００１２】[0012]
【表１】 [Table 1]
【００１３】[0013]
【表２】 [Table 2]
【００１４】表２から明らかな通り、ＬＣは平均値で、
４４hr後において、実施例１及び実施例２が０．９００
〜１．１７μＡ、従来例が１１．５μＡそして比較例が
９．９０μＡとなる。すなわち、実施例１及び実施例２
は従来例の約７．８〜１０．２％、比較例の約９．１〜
１１．８％に低下する。As is clear from Table 2, LC is an average value,
After 44 hours, Example 1 and Example 2 had 0.900.
˜1.17 μA, 11.5 μA in the conventional example, and 9.90 μA in the comparative example. That is, Example 1 and Example 2
Is about 7.8 to 10.2% of the conventional example and about 9.1 to 1 of the comparative example.
It drops to 11.8%.
【００１５】[0015]
【発明の効果】以上の通り、本発明によれば、陽極酸化
皮膜をりんイオンを含む部分と含まない部分に分け、特
に、弁作用金属側から１／２の厚さの部分にはりんイオ
ンを含まない構成とすることにより、耐湿性を向上で
き、ＬＣを改善できる固体電解コンデンサ及びその製造
方法が得られる。As described above, according to the present invention, the anodic oxide film is divided into a portion containing phosphorus ions and a portion not containing phosphorus ions. By adopting a configuration that does not include, it is possible to obtain a solid electrolytic capacitor having improved moisture resistance and improved LC and a manufacturing method thereof.
【図１】本発明の実施例に用いるコンデンサ素子の断面
図を示す。FIG. 1 shows a sectional view of a capacitor element used in an embodiment of the present invention.
１…焼結体、 ３…陽極酸化皮膜、 ４…りんイオンを
含まない部分、５…りんイオンを含む部分。1 ... Sintered body, 3 ... Anodized film, 4 ... Portion not containing phosphorus ion, 5 ... Portion containing phosphorus ion.
Claims (2)
電解コンデンサにおいて、少なくとも弁作用金属側から
１／２の厚さの部分にりんイオンを含まず、１／２の厚
さから外側の部分にりんイオンを含む陽極酸化皮膜を設
けることを特徴とする固体電解コンデンサ。1. A solid electrolytic capacitor having a valve action metal provided with an anodic oxide film, wherein at least a portion having a thickness of 1/2 from the valve action metal side does not contain phosphorus ions, and a portion from a thickness of 1/2 to an outer side is formed. A solid electrolytic capacitor characterized in that an anodic oxide film containing phosphorus ions is provided on a portion thereof.
成した固体電解コンデンサの製造方法において、りんイ
オンを含まない化成液を用い最大化成電圧の少なくとも
１／２以上の電圧で化成する工程と、この工程後にりん
イオンを含む化成液を用い最大化成電圧まで化成する工
程とを行うことを特徴とする固体電解コンデンサの製造
方法。2. A method for producing a solid electrolytic capacitor in which a valve metal is formed to form an anodized film, wherein a forming solution containing no phosphorus ions is used to form at least a half of the maximum forming voltage. And a step of forming a maximum formation voltage using a formation solution containing phosphorus ions after this step, the method for producing a solid electrolytic capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3359658A JP2874423B2 (en) | 1991-12-26 | 1991-12-26 | Manufacturing method of tantalum solid electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3359658A JP2874423B2 (en) | 1991-12-26 | 1991-12-26 | Manufacturing method of tantalum solid electrolytic capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05182869A true JPH05182869A (en) | 1993-07-23 |
| JP2874423B2 JP2874423B2 (en) | 1999-03-24 |
Family
ID=18465628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3359658A Expired - Lifetime JP2874423B2 (en) | 1991-12-26 | 1991-12-26 | Manufacturing method of tantalum solid electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2874423B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1713102A1 (en) * | 2004-02-04 | 2006-10-18 | Sanyo Electric Co., Ltd. | Solid electrolytic capacitor and method for manufacturing same |
| JP2008166851A (en) * | 2004-02-04 | 2008-07-17 | Sanyo Electric Co Ltd | Solid electrolytic capacitor and method for manufacturing method thereof |
| US20230145058A1 (en) * | 2020-02-28 | 2023-05-11 | Panasonic Intellectual Property Management Co., Ltd. | Electrode for electrolytic capacitor, method for manufacturing same, and electrolytic capacitor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5245547A (en) * | 1975-10-08 | 1977-04-11 | Elna Co Ltd | Process for anodizing aluminum for electrolytic condenser |
| JPS5292360A (en) * | 1976-01-28 | 1977-08-03 | Elna Co Ltd | Method of oxidizing positive electrode of aluminum for elecrolytic capacitor |
| JPS52139993A (en) * | 1976-05-18 | 1977-11-22 | Toshiba Corp | Preparation of dielectric layer |
| JPH02277212A (en) * | 1989-04-18 | 1990-11-13 | Matsushita Electric Ind Co Ltd | Tantalum electrolytic capacitor and its manufacture |
-
1991
- 1991-12-26 JP JP3359658A patent/JP2874423B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5245547A (en) * | 1975-10-08 | 1977-04-11 | Elna Co Ltd | Process for anodizing aluminum for electrolytic condenser |
| JPS5292360A (en) * | 1976-01-28 | 1977-08-03 | Elna Co Ltd | Method of oxidizing positive electrode of aluminum for elecrolytic capacitor |
| JPS52139993A (en) * | 1976-05-18 | 1977-11-22 | Toshiba Corp | Preparation of dielectric layer |
| JPH02277212A (en) * | 1989-04-18 | 1990-11-13 | Matsushita Electric Ind Co Ltd | Tantalum electrolytic capacitor and its manufacture |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1713102A1 (en) * | 2004-02-04 | 2006-10-18 | Sanyo Electric Co., Ltd. | Solid electrolytic capacitor and method for manufacturing same |
| JP2008166851A (en) * | 2004-02-04 | 2008-07-17 | Sanyo Electric Co Ltd | Solid electrolytic capacitor and method for manufacturing method thereof |
| EP1713102A4 (en) * | 2004-02-04 | 2010-03-03 | Sanyo Electric Co | Solid electrolytic capacitor and method for manufacturing same |
| JP4545204B2 (en) * | 2004-02-04 | 2010-09-15 | 三洋電機株式会社 | Solid electrolytic capacitor and manufacturing method thereof |
| US20230145058A1 (en) * | 2020-02-28 | 2023-05-11 | Panasonic Intellectual Property Management Co., Ltd. | Electrode for electrolytic capacitor, method for manufacturing same, and electrolytic capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2874423B2 (en) | 1999-03-24 |
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