JPH0518055B2 - - Google Patents
Info
- Publication number
- JPH0518055B2 JPH0518055B2 JP60121725A JP12172585A JPH0518055B2 JP H0518055 B2 JPH0518055 B2 JP H0518055B2 JP 60121725 A JP60121725 A JP 60121725A JP 12172585 A JP12172585 A JP 12172585A JP H0518055 B2 JPH0518055 B2 JP H0518055B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- flow path
- gas flow
- concentration
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000007789 gas Substances 0.000 claims description 152
- 239000002994 raw material Substances 0.000 claims description 34
- 239000012159 carrier gas Substances 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910007926 ZrCl Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は第１のガスと第２のガスとの混合ガス
における第２のガスの濃度、例えばキヤリアガス
と膜形成に供される原料ガスとの混合ガスにおけ
る原料ガスの濃度を測定する装置に係り、特にガ
スの熱伝導率の変化を利用して測定を行なうガス
濃度測定装置に関する。Detailed Description of the Invention [Technical Field of the Invention] The present invention relates to the concentration of the second gas in a mixed gas of the first gas and the second gas, for example, the concentration of the carrier gas and the raw material gas used for film formation. The present invention relates to a device for measuring the concentration of a raw material gas in a mixed gas, and particularly to a gas concentration measuring device that performs measurement using changes in the thermal conductivity of the gas.
原料ガスをキヤリアガスに乗せて反応炉に導
き、高温下での化学反応により試料上に薄膜を形
成するCVD法は、半導体装置およびその関連装
置において多用される膜形成技術の一つである。
CVD法においては液体または固体状の原料をガ
ス化して反応炉に供給する場合、安定な流量制御
を行なうことが重要であり、そのための種々の方
式が考案されている。その一つとしてキヤリアガ
スの流量および原料加熱温度を一定に保つこと
で、一定流量の蒸発ガス（キヤリアガスと原料ガ
スとの混合ガス）を得るキヤリアガス制御方式が
ある。しかし、この方式では原料の経時変化、蒸
発に伴う温度変化等により、蒸発量を一定に制御
することができない。
The CVD method, in which a raw material gas is carried on a carrier gas and introduced into a reactor to form a thin film on a sample through a chemical reaction at high temperatures, is one of the film formation techniques often used in semiconductor devices and related equipment.
In the CVD method, when a liquid or solid raw material is gasified and supplied to a reactor, it is important to perform stable flow control, and various methods have been devised for this purpose. One of them is a carrier gas control method that obtains a constant flow rate of evaporated gas (mixed gas of carrier gas and raw material gas) by keeping the carrier gas flow rate and raw material heating temperature constant. However, with this method, it is not possible to control the amount of evaporation to a constant level due to changes in the raw material over time, temperature changes accompanying evaporation, and the like.
この欠点を解消すべく、混合ガス中の原料ガス
の濃度を直接検出し、それに基いて原料ガス流量
を高精度に制御する方式が開発されている。具体
的には、第４図に示すようにキヤリアガス流路１
および混合ガス流路５にフイラメント２，４をそ
れぞれ挿入し、フイラメント２によりガスの熱伝
導率の変化を利用してキヤリアガスの濃度を検出
した後、キヤリアガスを原料タンク３に導びき原
料を蒸発させてキヤリアガスと原料ガスとの混合
ガスを作り、この混合ガス中の原料ガスの濃度を
同様にフイラメント４により検出する。これらの
フイラメント２，４を２辺に接続してホイートス
トン・ブリツジ回路を構成することにより、原料
ガスについての濃度比信号を求め、この濃度比信
号から原料ガスの流量を算出する。そして、この
原料ガス流量を設定流量と比較し、両者が一致す
るようにキヤリアガスの流量を調整するのであ
る。しかしながら、この方式では次のような問題
があつた。 In order to overcome this drawback, a method has been developed in which the concentration of the raw material gas in the mixed gas is directly detected and the flow rate of the raw material gas is controlled with high precision based on the detected concentration. Specifically, as shown in FIG.
After inserting the filaments 2 and 4 into the mixed gas flow path 5 and detecting the concentration of the carrier gas using the change in thermal conductivity of the gas using the filament 2, the carrier gas is led to the raw material tank 3 to evaporate the raw material. A mixed gas of the carrier gas and the raw material gas is produced, and the concentration of the raw material gas in this mixed gas is similarly detected by the filament 4. By connecting these filaments 2 and 4 on two sides to form a Wheatstone bridge circuit, a concentration ratio signal for the source gas is obtained, and the flow rate of the source gas is calculated from this concentration ratio signal. This raw material gas flow rate is then compared with the set flow rate, and the carrier gas flow rate is adjusted so that the two match. However, this method has the following problems.
最近、CVD装置における膜形成原料としては、
低蒸気圧材料の使用が要求される傾向にある。低
蒸気圧材料は材料の高温化によつて原料ガスの多
量供給を可能とする反面、高温化によつて材料の
熱分解が生じ、また固体材料の場合は粒子の固化
が起こる。これを避けるには、材料を減圧下で蒸
発させて低温化を図ればよい。ところが、上述し
た流量制御装置は常圧下では特に問題はないが、
20Torr以下というような減圧下ではガスの熱伝
導率が圧力の影響を受ける関係で、上記２つのフ
イラメント２，４間に存在する原料タンク３、配
管等の圧力損失により生じる圧力差によつて原料
ガスの濃度測定値に誤差が生じ、高精度な流量制
御が困難となる。 Recently, as a film forming raw material in CVD equipment,
The trend is to require the use of low vapor pressure materials. Low vapor pressure materials enable the supply of a large amount of raw material gas by increasing the temperature of the material, but the increase in temperature causes thermal decomposition of the material, and in the case of solid materials, solidification of particles occurs. To avoid this, the material can be evaporated under reduced pressure to lower the temperature. However, although there is no particular problem with the above-mentioned flow control device under normal pressure,
Under reduced pressure, such as 20 Torr or less, the thermal conductivity of gas is affected by the pressure, so the raw material is Errors occur in the gas concentration measurements, making it difficult to control the flow rate with high accuracy.
本発明の目的は、混合ガス中の所望のガスの濃
度をガス流路が減圧下にある場合でも、圧力によ
る影響を受けることなく高精度に測定できるガス
濃度測定装置を提供することにある。
An object of the present invention is to provide a gas concentration measuring device that can measure the concentration of a desired gas in a mixed gas with high precision without being affected by pressure even when the gas flow path is under reduced pressure.
本発明はこの目的を達成するため、第１のガス
と第２のガスとの混合ガス中の第２のガスの濃度
を測定するガス濃度測定装置において、前記混合
ガスを通過させる混合ガス流路と、前記第１のガ
スと同種のガスを参照ガスとして通過させる参照
ガス流路と、前記混合ガス流路および参照ガス流
路にそれぞれ挿入されたフイラメントと、これら
のフイラメントを少なくとも二辺に含み、前記第
２のガスの濃度に対応した不平衡電圧を出力する
ブリツジ回路と、前記混合ガス流路および参照ガ
ス流路にそれぞれの挿入された圧力センサと前記
混合ガス流路および参照ガス流路のいずれか一方
または両方に挿入された圧力調整部材を有し、前
記混合ガス流路および参照ガス流路を同圧に保持
する手段とを備えたことを特徴とする。
In order to achieve this object, the present invention provides a gas concentration measuring device that measures the concentration of a second gas in a mixed gas of a first gas and a second gas, which includes a mixed gas flow path through which the mixed gas passes. , a reference gas flow path through which a gas of the same type as the first gas passes as a reference gas, a filament inserted into the mixed gas flow path and the reference gas flow path, and at least two sides thereof include these filaments. , a bridge circuit that outputs an unbalanced voltage corresponding to the concentration of the second gas, a pressure sensor inserted into the mixed gas flow path and the reference gas flow path, and the mixed gas flow path and the reference gas flow path. The method is characterized in that it has a pressure adjustment member inserted into either or both of the gas flow paths and means for maintaining the mixed gas flow path and the reference gas flow path at the same pressure.
本発明によれば、同圧に保持された混合ガスの
流路および参照ガス流路にそれぞれの濃度を測定
するためのフイラメントが挿入されており、これ
らのフイラメントを用いたブリツジ回路によつて
第２のガスの濃度を測定するため、圧力差に起因
する濃度測定誤差が著しく減少し、高精度の濃度
測定が可能となる。
According to the present invention, filaments for measuring the respective concentrations are inserted into the mixed gas flow path and the reference gas flow path that are maintained at the same pressure, and a bridge circuit using these filaments is used to measure the concentration of each gas. Since the concentration of the second gas is measured, concentration measurement errors due to pressure differences are significantly reduced, and highly accurate concentration measurement is possible.
第１図は本発明の一実施例に係るガス濃度測定
装置の構成をCVD装置等におけるガス供給系に
適用した場合について示したものである。
FIG. 1 shows a case where the configuration of a gas concentration measuring device according to an embodiment of the present invention is applied to a gas supply system in a CVD device or the like.
図において示すように、キヤリアガス供給源１
１からのAr、He等のガスは二分岐され、一方は
キヤリアガス流路１２に、また他方は参照ガス流
路１３に送出される。キヤリアガス流路１２を通
過したキヤリアガスは、例えば高純度のWCl6，
ZrCl4，MoCl5等の低蒸気圧材料からなる原料を
収容した原料タンク１４に導入される。これによ
り原料タンク１４から原料ガスとキヤリアガスと
の混合ガスが蒸発され、この混合ガスが混合ガス
流路１５に導かれる。 As shown in the figure, carrier gas supply source 1
Gases such as Ar and He from 1 are branched into two branches, one being sent to the carrier gas flow path 12 and the other to the reference gas flow path 13. The carrier gas that has passed through the carrier gas flow path 12 contains, for example, high-purity WCl 6 ,
The raw material is introduced into a raw material tank 14 containing raw materials made of low vapor pressure materials such as ZrCl 4 and MoCl 5 . As a result, the mixed gas of the raw material gas and the carrier gas is evaporated from the raw material tank 14, and this mixed gas is guided to the mixed gas flow path 15.
混合ガス流路１５および参照ガス流路１３に
は、それぞれフイラメント１６，１７が挿入され
ている。これらのフイラメント１６，１７は、混
合ガスおよび参照ガスの濃度をそれぞれのガスの
熱伝導率の違いを利用して検出するためのもので
ある。なお、フイラメントを収納するセルは圧力
の影響をより受けにくい、つまりガスの流量に影
響されない拡散型であることが望ましい。 Filaments 16 and 17 are inserted into the mixed gas flow path 15 and the reference gas flow path 13, respectively. These filaments 16 and 17 are used to detect the concentrations of the mixed gas and the reference gas by utilizing the difference in thermal conductivity of the respective gases. Note that it is desirable that the cell that houses the filament be of a diffusion type that is less susceptible to the influence of pressure, that is, that is not influenced by the flow rate of gas.
ここで、混合ガス流路１５および参照ガス流路
１３の出口側は合流流路１８に共通に接続されて
いる。そして、混合ガス流路１５および参照ガス
流路１３に図示しない圧力センサを挿入すると共
に、混合ガス流路１５および参照ガス流路１３の
いずれか一方または両方に図示しない圧力調整部
材、例えば圧力調整用バルブを挿入して、両流路
１５，１３が同圧になるように保持している。す
なわち、フイラメント１６，１７を通過した混合
ガスおよび参照ガスは、合流用流路１８で合流さ
れた後、被ガス供給系１９、例えばCVD装置に
おける反応炉内に導入される。被ガス供給系１９
は真空ポンプ２０に接続されており、これにより
例えば20Torr程度以下の圧力に減圧されている。 Here, the outlet sides of the mixed gas flow path 15 and the reference gas flow path 13 are commonly connected to the merging flow path 18 . Then, a pressure sensor (not shown) is inserted into the mixed gas flow path 15 and the reference gas flow path 13, and a pressure adjustment member (not shown), for example, a pressure adjustment member (not shown) is inserted into either or both of the mixed gas flow path 15 and the reference gas flow path 13. A valve is inserted to maintain both channels 15 and 13 at the same pressure. That is, the mixed gas and reference gas that have passed through the filaments 16 and 17 are combined in a merging channel 18 and then introduced into a gas supply system 19, such as a reactor in a CVD apparatus. Gas supply system 19
is connected to a vacuum pump 20, which reduces the pressure to, for example, about 20 Torr or less.
フイラメント１６，１７は第２図に示すように
固定抵抗２１，２２とによりホイートストン・ブ
リツジ回路２３を構成しており、このブリツジ回
路２３に直流電源２４から電圧が印加される。フ
イラメント１６，１７は電源２４からの電流によ
り発熱し、第１図の混合ガス流路１５および参照
ガス流路１３をそれぞれ通過する混合ガスおよび
参照ガスによつて冷却されるが、そのときのフイ
ラメント１６，１７の温度はそれぞれのガスの熱
伝導率、つまりガスの濃度によつて異なり、結局
その抵抗値に差が生じる。従つて、この抵抗値の
差によりブリツジ回路２３の出力に生ずる不平衡
電圧を増幅器２５を介して取出すことによつて、
混合ガス中の原料ガスの濃度を表わす濃度比信号
を得ることができる。 As shown in FIG. 2, the filaments 16 and 17 constitute a Wheatstone bridge circuit 23 with fixed resistors 21 and 22, and a voltage is applied to this bridge circuit 23 from a DC power supply 24. The filaments 16 and 17 generate heat due to the current from the power source 24, and are cooled by the mixed gas and reference gas passing through the mixed gas flow path 15 and the reference gas flow path 13 in FIG. 1, respectively. The temperatures of 16 and 17 differ depending on the thermal conductivity of each gas, that is, the concentration of the gas, resulting in a difference in their resistance values. Therefore, by extracting the unbalanced voltage generated at the output of the bridge circuit 23 due to the difference in resistance values through the amplifier 25,
A concentration ratio signal representing the concentration of source gas in the mixed gas can be obtained.
ここで、フイラメント１６，１７が設置された
混合ガス流路１５および参照ガス流路１３は合流
流路１８で結合され、被ガス供給系１９を経て真
空ポンプ２０により規定される同じ圧力に保持さ
れているため、減圧下にありながら圧力差による
濃度検出誤差はほとんど生じない。 Here, the mixed gas flow path 15 in which the filaments 16 and 17 are installed and the reference gas flow path 13 are connected by a merging flow path 18, and are maintained at the same pressure prescribed by a vacuum pump 20 via a gas supply system 19. Therefore, there is almost no concentration detection error due to the pressure difference even though it is under reduced pressure.
すなわち、濃度検出のための２つフイラメント
を原料タンクへ至るキヤリア流路、および原料タ
ンクからの混合ガス流路にそれぞれ配置した第４
図に示すような従来装置では、混合ガス流路が減
圧下にある場合、両流路間に生じる圧力差により
ガスの分子密度が変わり、ガスの熱伝導率が影響
を受ける。このため、第３図に破線で示すように
減圧下ではブリツジ回路の出力オフセツト（零点
シフト）が非常に大きくなり、濃度検出誤差が増
大する。 That is, two filaments for concentration detection are placed in the carrier flow path leading to the raw material tank and the fourth filament located in the mixed gas flow path from the raw material tank.
In the conventional device shown in the figure, when the mixed gas flow path is under reduced pressure, the molecular density of the gas changes due to the pressure difference generated between the two flow paths, and the thermal conductivity of the gas is affected. Therefore, as shown by the broken line in FIG. 3, the output offset (zero point shift) of the bridge circuit becomes extremely large under reduced pressure, and the concentration detection error increases.
これに対し、本発明においてはフイラメント１
６，１７での圧力差がないため、第３図に実線で
示すように減圧下でもブリツジ回路２３の出力の
オフセツトは極めて少なく、高い濃度検出精度が
得られる。なお、このオフセツトが＋、−側に幅
を持つているのは、フイラメント１６，１７の温
度特性の違いに起因するものであり、温度特性が
同じであればオフセツトはほとんど発生しない。 On the other hand, in the present invention, the filament 1
Since there is no pressure difference between 6 and 17, the offset of the output of the bridge circuit 23 is extremely small even under reduced pressure, as shown by the solid line in FIG. 3, and high concentration detection accuracy can be obtained. The reason why this offset has a width on the + and - sides is due to the difference in the temperature characteristics of the filaments 16 and 17; if the temperature characteristics are the same, almost no offset will occur.
こうしてフイラメント１６，１７およびブリツ
ジ回路２３を通して得られた濃度比信号は、例え
ばキヤリアガスの流量信号に基いて混合ガス中の
原料ガスの流量信号に変換され、その原料ガス流
量信号と予め設定された原料ガス設定流量信号と
の差流量信号が零となるようにキヤリアガスの流
量が制御されることになる。 The concentration ratio signal thus obtained through the filaments 16, 17 and the bridge circuit 23 is converted into a flow rate signal of the raw material gas in the mixed gas based on, for example, the flow rate signal of the carrier gas, and the raw material gas flow rate signal and the preset raw material The flow rate of the carrier gas is controlled so that the difference flow rate signal from the gas set flow rate signal becomes zero.
このようにして減圧下においても、被ガス供給
系１９に対し例えば膜形成に供される原料ガスの
安定な供給を行なうことができる。換言すれば、
原料を減圧下において蒸発させることができるの
で、原料として低蒸気圧材料を使用することが可
能となる。その結果、低蒸気圧材料がMoCl5の場
合を例にとると、50Torrの減圧下では、常圧
（大気圧）下で蒸発させる場合に比べ10倍の蒸発
量（流量）が得られ、さらに10Torrの減圧下で
は40倍以上という極めて多量の原料ガスの安定な
供給が可能となる。 In this way, even under reduced pressure, it is possible to stably supply, for example, the raw material gas used for film formation to the gas supply system 19. In other words,
Since the raw material can be evaporated under reduced pressure, it is possible to use a low vapor pressure material as the raw material. As a result, taking MoCl 5 as a low vapor pressure material as an example, under a reduced pressure of 50 Torr, the amount of evaporation (flow rate) is 10 times greater than when evaporating under normal pressure (atmospheric pressure). Under a reduced pressure of 10 Torr, it is possible to stably supply an extremely large amount of raw material gas, which is more than 40 times larger.
なお、本発明は上記実施例に限定されるもので
はなく、例えば第２図におけるブリツジ回路内の
固定抵抗２１，２２をフイラメントに置換え、そ
れぞれ混合ガス流路１５、参照ガス流路１３に挿
入してもよい。このようにすると、減圧によるフ
イラメントの温度上昇に伴う濃度検出感度の変動
を抑制でき、さらに高精度の濃度検出が可能とな
る。また、フイラメントの温度を検知し、その結
果をブリツジ回路出力にフイードバツクする、い
わゆる定温度型ブリツジ回路を構成することも、
より高精度の濃度検出を行なう上で有効である。 Note that the present invention is not limited to the above-mentioned embodiment, and for example, the fixed resistors 21 and 22 in the bridge circuit in FIG. 2 may be replaced with filaments and inserted into the mixed gas flow path 15 and reference gas flow path 13, respectively. It's okay. In this way, it is possible to suppress fluctuations in concentration detection sensitivity due to an increase in the temperature of the filament due to reduced pressure, and it is possible to detect concentration with higher accuracy. It is also possible to configure a so-called constant temperature bridge circuit that detects the filament temperature and feeds the result back to the bridge circuit output.
This is effective in performing more accurate concentration detection.
さらに、第１図では混合ガス流路１５および参
照ガス流路１３が合流流路１８で１本の流路とな
り、両ガスが合流されてから被ガス供給系１９に
導入されているが、それぞれの流路１５，１３を
個別に被ガス供給系１９に接続し、両ガスを被ガ
ス供給系１９で混ぜるという構成にしても同様の
効果が得られる。 Furthermore, in FIG. 1, the mixed gas flow path 15 and the reference gas flow path 13 become one flow path at the merging flow path 18, and both gases are introduced into the target gas supply system 19 after being merged. A similar effect can be obtained by connecting the flow paths 15 and 13 individually to the gas supply system 19 and mixing both gases in the gas supply system 19.
また、本発明はCVD装置に限定されるもので
はなく、キヤリアガスと原料ガスとの混合ガスを
用いて減圧下で膜形成を行なうような装置一般に
有効である。 Furthermore, the present invention is not limited to CVD apparatuses, but is effective for general apparatuses that perform film formation under reduced pressure using a mixed gas of carrier gas and raw material gas.
さらに、本発明の主旨は混合ガスの濃度と、混
合ガス流路と同圧に保持された参照ガス流路を通
過する参照ガスの濃度をガスの熱伝導率の変化を
利用して検出し、ブリツジ回路を用いて混合ガス
中の濃度を測定することにあるので、参照ガスは
必ずしも混合ガスと合流される必要はない。 Furthermore, the gist of the present invention is to detect the concentration of a mixed gas and the concentration of a reference gas passing through a reference gas flow path maintained at the same pressure as the mixed gas flow path using changes in the thermal conductivity of the gas, Since the purpose is to measure the concentration in a mixed gas using a bridge circuit, the reference gas does not necessarily need to be combined with the mixed gas.
その他、本発明は要旨を逸脱しない範囲で種々
変形して実施することが可能である。 In addition, the present invention can be implemented with various modifications without departing from the scope.
第１図は本発明の一実施例に係るガス濃度測定
装置の構成を説明するための図、第２図は第１図
におけるフイラメントを含むブリツジ回路の構成
を示す図、第３図は従来装置および本発明装置に
おけるガス濃度測定用ブリツジ回路の出力オフセ
ツトのガス圧力依存性を示す図、第４図は従来の
ガス濃度測定装置の概略を説明するための図であ
る。
１１…キヤリアガス供給源、１２…キヤリアガ
ス流路、１３…参照ガス流路、１４…原料タン
ク、１５…混合ガス流路、１６，１７…フイラメ
ント、１８…合流流路、１９…被ガス供給系、２
０…真空ポンプ、２１，２２…固定抵抗、２３…
ブリツジ回路、２４…直流電源、２５…増幅器。
FIG. 1 is a diagram for explaining the configuration of a gas concentration measuring device according to an embodiment of the present invention, FIG. 2 is a diagram showing the configuration of a bridge circuit including the filament in FIG. 1, and FIG. 3 is a diagram of a conventional device. FIG. 4 is a diagram for explaining the outline of a conventional gas concentration measuring device. DESCRIPTION OF SYMBOLS 11... Carrier gas supply source, 12... Carrier gas flow path, 13... Reference gas flow path, 14... Raw material tank, 15... Mixed gas flow path, 16, 17... Filament, 18... Merging flow path, 19... Target gas supply system, 2
0... Vacuum pump, 21, 22... Fixed resistance, 23...
Bridge circuit, 24...DC power supply, 25...Amplifier.
Claims (1)
２のガスの濃度を測定するガス濃度測定装置にお
いて、 前記混合ガスを通過させるガス流路と、 前記第１のガスと同種のガスを参照ガスとして
通過させる参照ガス流路と、 前記混合ガス流路および参照ガス流路にそれぞ
れ挿入されたフイラメントと、 これらのフイラメントを少なくとも二辺に含
み、前記第２のガスの濃度に対応した不平衡電圧
を出力するブリツジ回路と、 前記混合ガス流路および参照ガス流路にそれぞ
れ挿入された圧力センサと前記混合ガス流路およ
び参照ガス流路のいずれか一方または両方に挿入
された圧力調整部材を有し、前記混合ガス流路お
よび参照ガス流路を同圧に保持する手段と を備えたことを特徴とするガス濃度測定装置。 ２ 前記第１のガスがキヤリアガスであり、前記
第２のガスが膜形成に供される原料ガスであるこ
とを特徴とする特許請求の範囲第１項記載のガス
濃度測定装置。[Scope of Claims] 1. A gas concentration measuring device for measuring the concentration of a second gas in a mixed gas of a first gas and a second gas, comprising: a gas flow path through which the mixed gas passes; a reference gas flow path through which a gas of the same type as the first gas passes as a reference gas; a filament inserted into the mixed gas flow path and the reference gas flow path, respectively; a bridge circuit that outputs an unbalanced voltage corresponding to the concentration of gas; a pressure sensor inserted into the mixed gas flow path and the reference gas flow path, and either one of the mixed gas flow path and the reference gas flow path; A gas concentration measuring device comprising: a pressure adjustment member inserted in both, and means for maintaining the mixed gas flow path and the reference gas flow path at the same pressure. 2. The gas concentration measuring device according to claim 1, wherein the first gas is a carrier gas, and the second gas is a raw material gas used for film formation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12172585A JPS61280556A (en) | 1985-06-05 | 1985-06-05 | Apparatus for measuring concentration of gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12172585A JPS61280556A (en) | 1985-06-05 | 1985-06-05 | Apparatus for measuring concentration of gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61280556A JPS61280556A (en) | 1986-12-11 |
| JPH0518055B2 true JPH0518055B2 (en) | 1993-03-10 |
Family
ID=14818333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12172585A Granted JPS61280556A (en) | 1985-06-05 | 1985-06-05 | Apparatus for measuring concentration of gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61280556A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50126293U (en) * | 1974-03-30 | 1975-10-16 |
-
1985
- 1985-06-05 JP JP12172585A patent/JPS61280556A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61280556A (en) | 1986-12-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4341107A (en) | Calibratable system for measuring fluid flow | |
| KR0163608B1 (en) | Calibration system for ultra high purity gas analysis | |
| US3650151A (en) | Fluid flow measuring system | |
| US4852389A (en) | System for controlled humidity tests | |
| US5265463A (en) | Apparatus for measuring the transmission rate of volatile organic chemicals through a barrier material | |
| JPS6291861A (en) | On-line calibrating apparatus for chemical monitor | |
| US2960870A (en) | Method and apparatus for determination of surface areas | |
| JPH0535225B2 (en) | ||
| JPH03262926A (en) | Steam flow rate measuring instrument | |
| JPH1090033A (en) | Method for quickly identifying gas flow or liquid flow and device for executing the method | |
| US3460909A (en) | Catalytic combustion detector for gas chromatography | |
| US4464925A (en) | Hydrogen, deuterium thermal conductivity detector | |
| Ackelid et al. | How a limited mass transfer in the gas phase may affect the steady-state response of a Pd-MOS hydrogen sensor | |
| JPH11512175A (en) | Apparatus and method for removal and quantification of liquid or gaseous volatile or dissolved components | |
| JPH0518055B2 (en) | ||
| JP3230431B2 (en) | Gas measurement device | |
| JPH08505468A (en) | Method for measuring calorific value of gas and / or Wobbe index of natural gas | |
| US5312761A (en) | Method for measuring trace quantity of oxygen in gas | |
| US3435678A (en) | Apparatus for flow monitoring | |
| JP2946800B2 (en) | Carbon dioxide measuring device | |
| JPH0110579Y2 (en) | ||
| CN111013415A (en) | Standard gas generation system based on temperature control | |
| SU1045083A1 (en) | Polymer membrane permeability determination method | |
| JPH02268826A (en) | Flow rate control device for evaporated gas | |
| JPS59185772A (en) | Control device for flow rate of evaporating gas in high melting metallic compound |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |