JPH05166715A - Processing device - Google Patents
Processing deviceInfo
- Publication number
- JPH05166715A JPH05166715A JP3351192A JP35119291A JPH05166715A JP H05166715 A JPH05166715 A JP H05166715A JP 3351192 A JP3351192 A JP 3351192A JP 35119291 A JP35119291 A JP 35119291A JP H05166715 A JPH05166715 A JP H05166715A
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- liquid
- processing
- wafer
- receiving portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Details Or Accessories Of Spraying Plant Or Apparatus (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、例えば半導体ウエハ
等の被処理体の表面に現像液等の処理液を供給する処理
装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus for supplying a processing liquid such as a developing liquid to the surface of an object to be processed such as a semiconductor wafer.
【０００２】[0002]
【従来の技術】従来のこの種の処理装置として、例えば
半導体ウエハ等の被処理体を回転可能なスピンチャック
上に保持し、スピンチャックの上方に、半導体ウエハと
対向するように処理液供給ノズルを配設し、そして、処
理液供給ノズルに設けられたノズル孔から半導体ウエハ
表面に処理液例えば現像液を滴下供給すると共に、スピ
ンチャックと処理液供給ノズルとを相対的に回転させて
現像液を半導体ウエハに膜状に被着する装置が知られて
いる。2. Description of the Related Art As a conventional processing apparatus of this type, for example, a processing object such as a semiconductor wafer is held on a rotatable spin chuck, and a processing liquid supply nozzle is provided above the spin chuck so as to face the semiconductor wafer. And a processing solution, for example, a developing solution is dripped and supplied to the surface of the semiconductor wafer from a nozzle hole provided in the processing solution supply nozzle, and the spin chuck and the processing solution supply nozzle are relatively rotated to develop the developing solution. There is known a device for depositing a film on a semiconductor wafer.
【０００３】このように構成される処理装置において、
一般にスピンチャックの側方には、不使用時の処理液供
給ノズルを保持する待機手段が設けられている。この待
機手段は、例えばノズル孔を非接触に保持すべく開口部
を有する箱状の容器にて形成されている。In the processing apparatus having such a configuration,
Generally, a stand-by means for holding the processing liquid supply nozzle when not in use is provided on the side of the spin chuck. This standby means is formed of, for example, a box-shaped container having an opening for holding the nozzle hole in a non-contact manner.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
この種の処理装置の待機手段においては、ノズル孔を開
口部に位置させて処理液供給ノズルを単に保持する構造
であるため、ノズル孔に現像液が残存し、この残存する
現像液が劣化、固化し、パーティクルとして付着するこ
とがあった。パーティクルが処理液供給ノズルに付着す
ると、半導体ウエハ表面への現像液の被着の不均一を招
くと共に、半導体ウエハを汚染して、被処理体の品質の
低下をきたすという問題がある。この問題を解決する手
段として、待機中に劣化した処理液が処理液供給ノズル
部に残存するのを防止するために処理液供給ノズルから
劣化した処理液を滴下させるダミーディスペンスと称す
る方法が考えられるが、この方法においては処理液のド
レン排液の流れが悪くオーバーフローあるいは飛散気味
となり、待機手段側に付着するパーティクルがノズル先
端に再付着する虞れがあり、パーティクルの再付着によ
り、上述と同様の問題が生じる。また、この方法は現像
液の無駄な消費量が増えて不経済である。However, in the conventional standby means of this type of processing apparatus, since the structure is such that the nozzle hole is located at the opening and the processing liquid supply nozzle is simply held, the development is performed in the nozzle hole. The liquid remained, and the remaining developer sometimes deteriorated and solidified and adhered as particles. When the particles adhere to the processing liquid supply nozzle, there is a problem in that the developer is not evenly adhered to the surface of the semiconductor wafer, and the semiconductor wafer is contaminated, and the quality of the object to be processed deteriorates. As a means for solving this problem, there is a method called a dummy dispense in which the deteriorated processing liquid is dropped from the processing liquid supply nozzle in order to prevent the processing liquid deteriorated during standby from remaining in the processing liquid supply nozzle portion. However, in this method, the flow of the drainage of the processing liquid is poor and it may be overflowed or scattered, and there is a possibility that particles adhering to the standby means may re-adhere to the nozzle tip. Problems arise. In addition, this method is uneconomical because wasteful consumption of the developer increases.
【０００５】この発明は上記事情に鑑みなされたもので
あり、不使用時の処理液供給ノズルのノズル孔先端部を
待機中に洗浄して、被処理体への処理液の均一被着と被
処理体の汚染防止を図ることを目的とする処理装置を提
供するものである。The present invention has been made in view of the above circumstances, and the tip of the nozzle hole of the processing liquid supply nozzle when not in use is cleaned during standby to uniformly deposit the processing liquid on the object to be processed and to cover the object. It is intended to provide a processing device intended to prevent contamination of a processing body.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
に、この発明の処理装置は、被処理体の表面に処理液を
滴下する多数のノズル孔を配列する処理液供給ノズル
と、不使用時の上記処理液供給ノズルを保持する待機手
段とを具備する処理装置を前提とし、上記待機手段は、
上記ノズル孔の先端部を包囲し得るように配設される樋
状の液体受部を具備し、上記液体受部内に洗浄液又は処
理液を溢流して上記ノズル孔先端部を洗浄することを特
徴とするものである。In order to achieve the above object, the processing apparatus of the present invention includes a processing liquid supply nozzle in which a large number of nozzle holes for dropping the processing liquid are arranged on the surface of an object to be processed, and it is not used. On the premise of a processing apparatus comprising a standby means for holding the processing liquid supply nozzle at the time, the standby means is
A trough-shaped liquid receiving portion is provided so as to surround the tip of the nozzle hole, and the tip of the nozzle hole is washed by overflowing a cleaning liquid or a processing liquid into the liquid receiving portion. It is what
【０００７】この発明において、少なくとも上記液体受
部内に洗浄液又は処理液を溢流させてノズル孔先端部を
洗浄するものであれば、洗浄後の乾燥処理は自然乾燥で
あってもよいが、好ましくは液体受部内又は液体受部の
側方にガス供給口を設けてなる方がよい。In the present invention, as long as at least the cleaning liquid or the processing liquid is overflowed into the liquid receiving portion to clean the tip of the nozzle hole, the drying treatment after the cleaning may be natural drying, but it is preferable. It is better to provide a gas supply port in the liquid receiving portion or on the side of the liquid receiving portion.
【０００８】[0008]
【作用】上記のように構成されるこの発明の処理装置に
よれば、待機手段に、処理液供給ノズルのノズル孔の先
端部を包囲し得るように配設される樋状の液体受部を具
備させ、液体受部内に洗浄液又は処理液を供給すること
により、洗浄液又は処理液が液体受部を溢流しつつノズ
ル孔先端部に接触してノズル孔先端部を洗浄することが
できる。According to the processing apparatus of the present invention configured as described above, the standby means is provided with the gutter-shaped liquid receiving portion arranged so as to surround the tip of the nozzle hole of the processing liquid supply nozzle. By supplying the cleaning liquid or the processing liquid into the liquid receiving portion, the cleaning liquid or the processing liquid overflows the liquid receiving portion and comes into contact with the nozzle hole tip portion to clean the nozzle hole tip portion.
【０００９】また、液体受部内又は液体受部の側方に設
けられたガス供給口から乾燥ガスを供給することによ
り、洗浄後のノズル孔先端部を均一かつ迅速に乾燥する
ことができる。Further, by supplying the dry gas from the gas supply port provided in the liquid receiving portion or on the side of the liquid receiving portion, the tip of the nozzle hole after cleaning can be uniformly and quickly dried.
【００１０】[0010]
【実施例】以下に、この発明の実施例を図面に基いて詳
細に説明する。この実施例はレジスト塗布現像装置に適
用したものである。Embodiments of the present invention will be described below in detail with reference to the drawings. This embodiment is applied to a resist coating / developing apparatus.
【００１１】図１に示すように、このレジスト塗布現像
装置は、被処理体例えば半導体ウエハＷ（以下、単にウ
エハという）に種々の処理を施す処理機構が配設された
処理機構ユニット１０と、処理機構ユニット１０にウエ
ハＷを自動的に搬入・搬出するための搬入・搬出機構１
とで主要部が構成されている。As shown in FIG. 1, the resist coating / developing apparatus includes a processing mechanism unit 10 in which a processing mechanism for performing various processes on an object to be processed, for example, a semiconductor wafer W (hereinafter, simply referred to as a wafer), is provided. A loading / unloading mechanism 1 for automatically loading / unloading the wafer W into / from the processing mechanism unit 10.
The main part consists of and.
【００１２】搬入・搬出機構１は、処理前のウエハＷを
収納するウエハキャリア２と、処理後のウエハＷを収納
するウエハキャリア３と、ウエハＷを吸着保持するアー
ム４と、このアーム４をＸ，Ｙ，Ｚ（垂直）及びθ（回
転）方向に移動させる移動機構５と、ウエハＷがアライ
メントされかつ処理機構ユニット１０との間でウエハＷ
の受け渡しがなされるアライメントステージ６とを備え
ている。The loading / unloading mechanism 1 includes a wafer carrier 2 for storing an unprocessed wafer W, a wafer carrier 3 for storing a processed wafer W, an arm 4 for sucking and holding the wafer W, and an arm 4. The wafer W is aligned between the moving mechanism 5 that moves the wafer W in the X, Y, Z (vertical) and θ (rotation) directions and the processing mechanism unit 10.
And an alignment stage 6 for delivering and receiving.
【００１３】処理機構ユニット１０には、アライメント
ステージ６よりＸ方向に形成された搬送路１１に沿って
移動自在に搬送機構１２が設けられている。搬送機構１
２にはＹ，Ｚ及びθ方向に移動自在にメインアーム１３
が設けられている。搬送路１１の一方の側には、ウエハ
Ｗとレジスト液膜との密着性を向上させるためのアドヒ
ージョン処理を行うアドヒージョン処理機構１４と、ウ
エハＷに塗布されたレジスト中に残存する溶剤を加熱蒸
発させるためのプリベーク機構１５と、加熱処理された
ウエハＷを冷却する冷却機構１６とが配設されている。
また、搬送路１１の他方の側には、ウエハＷの表面に処
理液例えば現像液を塗布する現像機構１７（処理装置）
と、ウエハＷ上にレジスト膜を塗布形成する塗布機構１
８とが配設されている。The processing mechanism unit 10 is provided with a transport mechanism 12 which is movable along a transport path 11 formed in the X direction from the alignment stage 6. Transport mechanism 1
2 has a main arm 13 movably in Y, Z and θ directions.
Is provided. On one side of the transfer path 11, an adhesion processing mechanism 14 for performing an adhesion process for improving the adhesion between the wafer W and the resist liquid film, and a solvent remaining in the resist applied to the wafer W are heated and evaporated. A pre-bake mechanism 15 for performing the heating and a cooling mechanism 16 for cooling the heat-treated wafer W are provided.
Further, on the other side of the transfer path 11, a developing mechanism 17 (processing device) for applying a processing liquid, for example, a developing liquid onto the surface of the wafer W.
And a coating mechanism 1 for coating and forming a resist film on the wafer W.
And 8 are provided.
【００１４】上記のように構成されるレジスト塗布現像
装置において、まず、処理前のウエハＷは、搬入・搬出
機構１のアーム４によってウエハキャリア２から搬出さ
れてアライメントステージ６上に載置され位置決めされ
る。次いで、アライメントステージ６上のウエハＷは、
搬送機構１２のメインアーム１３に保持されて、各処理
機構１４〜１８へと搬送され、レジスト塗布及び現像処
理される。そして、処理後のウエハＷはメインアーム１
３によってアライメントステージ６に戻され、更にアー
ム４により搬送されてウエハキャリア３に収納されるこ
とになる。In the resist coating and developing apparatus configured as described above, first, the unprocessed wafer W is unloaded from the wafer carrier 2 by the arm 4 of the loading / unloading mechanism 1 and placed on the alignment stage 6 for positioning. To be done. Then, the wafer W on the alignment stage 6 is
It is held by the main arm 13 of the transfer mechanism 12 and is transferred to each of the processing mechanisms 14 to 18 for resist coating and development processing. Then, the processed wafer W is transferred to the main arm 1
It is returned to the alignment stage 6 by 3, and further transported by the arm 4 and stored in the wafer carrier 3.
【００１５】次に、この発明の処理装置１７について説
明する。Next, the processing device 17 of the present invention will be described.
【００１６】この発明の処理装置は、図１に示すよう
に、ウエハＷを吸着保持すると共に垂直移動及び水平回
転可能に保持するスピンチャック２０と、このスピンチ
ャック２０の上方に移動されてウエハＷの表面に処理液
である現像液を供給する処理液供給ノズル２１と、スピ
ンチャック２０の一方側に配置されて不使用時の処理液
供給ノズル２１を保持する待機手段２３と、スピンチャ
ック２０の他方側に配置されて現像処理後、ウエハＷを
リンスするためのリンス液供給ノズル２４と、処理液供
給ノズル２１をスピンチャック２０上及び待機手段２３
上に選択移動するノズル移動機構２５とで主要部が構成
されている。As shown in FIG. 1, the processing apparatus of the present invention includes a spin chuck 20 that holds a wafer W by suction and vertically and horizontally rotatably, and a wafer W moved above the spin chuck 20. Of the spin chuck 20, a process solution supply nozzle 21 for supplying a developing solution, which is a process solution, to the surface of the spin chuck 20, a standby means 23 arranged on one side of the spin chuck 20 and holding the process solution supply nozzle 21 when not in use. The rinse liquid supply nozzle 24 for rinsing the wafer W and the processing liquid supply nozzle 21 on the spin chuck 20 and the standby means 23 are disposed on the other side and after the development processing.
The main part is constituted by the nozzle moving mechanism 25 that selectively moves upward.
【００１７】上記処理液供給ノズル２１は、ウエハＷの
直径とほぼ同じ長さに形成された矩形容器２６と、この
矩形容器２６の底部から下方に向って突出される突出部
２７に適宜間隔をおいて穿設される多数の細孔からなる
ノズル孔２２と、Ｏリング２８を介して矩形容器２６を
気密に閉塞する開閉可能な蓋体２９とで構成されてい
る。蓋体２９には、処理液供給管３０が接続され、図示
しない処理液供給源から不活性ガスの気体等により、所
定圧で矩形容器２６内に所定の現像液Ｌを圧送し供給可
能としている（図２参照）。The processing liquid supply nozzle 21 has a rectangular container 26 formed to have a length substantially equal to the diameter of the wafer W and a protrusion 27 projecting downward from the bottom of the rectangular container 26. It is composed of a nozzle hole 22 formed of a large number of small holes and a lid 29 that can be opened and closed to hermetically close the rectangular container 26 via an O-ring 28. A processing liquid supply pipe 30 is connected to the lid 29, and a predetermined developing liquid L can be pressure-fed and supplied into the rectangular container 26 at a predetermined pressure by an inert gas gas or the like from a processing liquid supply source (not shown). (See Figure 2).
【００１８】一方、待機手段２３は、図２及び図３に示
すように、処理液供給ノズル２１のノズル孔２２を開口
部３２に位置させて保持する開口箱状のノズル保持体３
１と、このノズル保持体３１の開口部側の内方に配設さ
れてノズル孔２２に付着する処理液を洗浄するための樋
状の液体受部３４とを具備してなる。この場合、ノズル
保持体３１の開口部周辺の上面には処理液供給ノズル２
１が保持される際に当接する気密シール用のＯリング３
３が周設されている。また、ノズル保持体３１の底部３
５はテーパ状に形成されて底部３５の低所には洗浄液の
排出口３６が設けられている。一方、液体受部３４はノ
ズル孔先端部（具体的には、ノズル孔２２先端部及びそ
の両側の突出部２７）を包囲し得るようにノズル保持体
３１の長手方向の両端壁に架設される断面Ｕ字状溝３７
を有する樋状体にて形成され、その底部３７ａに適宜間
隔をおいて複数の排液用小孔３８が穿設されている。ま
た、ノズル保持体３１の長手方向における両方の側壁部
には液体受部３４に開口する洗浄液供給口３９及び乾燥
ガス供給口４４が設けられている。洗浄液供給口３９に
は、ポンプ４０を介して洗浄液Ｌ（例えば純水）を収容
するタンク４１が接続され、乾燥ガス供給口４４にはフ
ァン４２を介して乾燥ガス例えば窒素ガス（Ｎ2 ガス）
供給源４３が接続されるようになっている。On the other hand, as shown in FIGS. 2 and 3, the standby means 23 has an opening box-shaped nozzle holder 3 for holding the nozzle hole 22 of the treatment liquid supply nozzle 21 at the opening 32.
1 and a trough-shaped liquid receiving portion 34 arranged inside the nozzle holder 31 on the opening side for cleaning the processing liquid adhering to the nozzle hole 22. In this case, the processing liquid supply nozzle 2 is provided on the upper surface of the nozzle holder 31 around the opening.
O-ring 3 for airtight seal that abuts when 1 is held
3 are installed around. In addition, the bottom portion 3 of the nozzle holder 31
Reference numeral 5 is formed in a tapered shape, and a cleaning liquid discharge port 36 is provided at a low portion of the bottom portion 35. On the other hand, the liquid receiving portion 34 is installed on both end walls in the longitudinal direction of the nozzle holder 31 so as to surround the nozzle hole tip (specifically, the nozzle hole 22 tip and the protrusions 27 on both sides thereof). U-shaped groove 37
It is formed of a trough-like body having a plurality of drainage small holes 38 at appropriate intervals at its bottom 37a. Further, a cleaning liquid supply port 39 and a dry gas supply port 44 opening to the liquid receiving part 34 are provided on both side wall parts in the longitudinal direction of the nozzle holder 31. A tank 41 containing a cleaning liquid L (for example, pure water) is connected to the cleaning liquid supply port 39 via a pump 40, and a drying gas such as nitrogen gas (N2 gas) is connected to the drying gas supply port 44 via a fan 42.
The supply source 43 is connected.
【００１９】上記のように構成されるこの発明の処理装
置において、ウエハＷの表面に現像液を被着するには、
予め処理液供給ノズル２１の矩形容器２６内に現像液を
供給して矩形容器２６内を現像液で満たした状態として
おき、待機手段２３に待機させておく。そして、メイン
アーム１３によって上昇したスピンチャック２０上にウ
エハＷを載置し、スピンチャック２０を下降する。In the processing apparatus of the present invention configured as described above, in order to deposit the developing solution on the surface of the wafer W,
The developing solution is previously supplied into the rectangular container 26 of the processing solution supply nozzle 21 so that the rectangular container 26 is filled with the developing solution, and the standby means 23 is made to stand by. Then, the wafer W is placed on the spin chuck 20 raised by the main arm 13, and the spin chuck 20 is lowered.
【００２０】次に、ノズル移動機構２５によって処理液
供給ノズル２１をウエハＷの中心位置付近まで水平移動
させた後、スピンチャック２０と処理液供給ノズル２１
とを相対的に上下移動させ、処理液供給ノズル２１のノ
ズル孔先端部とウエハＷとの間が微小間隔例えば０．１
mm〜１．５mmの範囲となるように設定する。そして、処
理液供給管３０から所定圧力で矩形容器２６内に所定の
現像液を供給することにより、各ノズル孔２２から滲み
出させるようにして現像液をウエハＷ表面に帯状に供給
する。これに伴ってスピンチャック２０によりウエハＷ
を低速回転で約１／２回転させると、ウエハＷ表面に供
給された現像液は処理液供給ノズル２１によって滲み出
されつつ押し広げられる。これにより、ウエハＷ表面均
一に薄く現像液を被着することができる。Next, after the processing liquid supply nozzle 21 is horizontally moved to the vicinity of the central position of the wafer W by the nozzle moving mechanism 25, the spin chuck 20 and the processing liquid supply nozzle 21 are moved.
Are vertically moved relative to each other so that the distance between the tip of the nozzle hole of the processing liquid supply nozzle 21 and the wafer W is very small, for example, 0.1.
Set so that the range is from mm to 1.5 mm. Then, by supplying a predetermined developing solution into the rectangular container 26 at a predetermined pressure from the processing solution supply pipe 30, the developing solution is supplied to the surface of the wafer W in a strip shape so as to be exuded from each nozzle hole 22. Along with this, the wafer W is rotated by the spin chuck 20.
Is rotated at a low speed for about 1/2 rotation, the developing solution supplied to the surface of the wafer W is spread while being exuded by the processing solution supply nozzle 21. As a result, the surface of the wafer W can be uniformly and thinly coated with the developing solution.
【００２１】その後、処理液供給ノズル２１はノズル移
動機構２５によってウエハＷ表面から退避された後、待
機手段２３のノズル保持体３１の上方まで水平移動さ
れ、そして、下降されてノズル保持体３１上に載置保持
される。このとき、処理液供給ノズル２１のノズル孔２
２の先端部は液体受部３４のＵ字状溝３７にて包囲され
る。この状態において、洗浄液供給源側が洗浄液供給口
３９に接続され、ポンプ４０が作動することにより、洗
浄液タンク４１から洗浄液Ｌが液体受部３４内に供給さ
れると、洗浄液Ｌは液体受部３４を溢流しつつノズル孔
先端部に接触して、ノズル孔先端部に付着する劣化、固
化した処理液を洗い流してノズル保持体３１の底部３５
へ流れる。したがって、処理液供給ノズル２１にはノズ
ル保持体３１側からのパーティクルの付着がなく、次の
処理液被着工程において、ウエハＷの表面に均一に清浄
な処理液を被着することができると共に、ウエハＷの汚
染を防止することができる。また、処理液供給ノズル２
１の待機中にノズル孔先端部の洗浄がなされるので、ウ
エハＷの処理を効率良く行うことができる。After that, the processing liquid supply nozzle 21 is retracted from the surface of the wafer W by the nozzle moving mechanism 25, then horizontally moved to a position above the nozzle holder 31 of the standby means 23, and then lowered to move it above the nozzle holder 31. Placed and held on. At this time, the nozzle hole 2 of the processing liquid supply nozzle 21
The front end of 2 is surrounded by the U-shaped groove 37 of the liquid receiving portion 34. In this state, when the cleaning liquid supply source side is connected to the cleaning liquid supply port 39 and the pump 40 is operated to supply the cleaning liquid L from the cleaning liquid tank 41 into the liquid receiving portion 34, the cleaning liquid L is supplied to the liquid receiving portion 34. The overflowing liquid comes into contact with the tip of the nozzle hole to wash away the deteriorated and solidified treatment liquid adhering to the tip of the nozzle hole, and to wash away the bottom portion 35 of the nozzle holder 31.
Flows to. Therefore, particles do not adhere to the processing liquid supply nozzle 21 from the nozzle holder 31 side, and in the next processing liquid deposition step, a clean processing liquid can be uniformly deposited on the surface of the wafer W. The contamination of the wafer W can be prevented. Further, the processing liquid supply nozzle 2
Since the tip of the nozzle hole is cleaned while waiting for No. 1, the wafer W can be efficiently processed.
【００２２】なお、洗浄後、洗浄液の供給を停止する
と、液体受部３４中の洗浄液は排液用小孔３８からノズ
ル保持体３１の底部３５へ流れ落ち、その後、排出口３
６から外部の所定場所へ排出される。また、洗浄後、乾
燥ガス供給口４４に乾燥ガス供給源４３が接続され、フ
ァン４２の駆動によって乾燥ガス（Ｎ2 ガス）が液体受
部３４内に供給されることにより、洗浄されたノズル孔
先端部は迅速に乾燥され、次の処理液供給ノズル２１に
よる処理工程に備えることができる。なお、処理液供給
ノズル２１が待機手段２３にて保持されて待機している
間、現像液が被着されたウエハＷはリンス液供給ノズル
２４から供給されるリンス液（例えば純水）によってリ
ンスが行われた後、リンス液の振り切りを行って処理は
終了する。When the supply of the cleaning liquid is stopped after the cleaning, the cleaning liquid in the liquid receiving portion 34 flows down from the small drainage hole 38 to the bottom portion 35 of the nozzle holder 31, and then the discharge port 3
6 is discharged to a predetermined place outside. After the cleaning, the dry gas supply source 43 is connected to the dry gas supply port 44, and the dry gas (N2 gas) is supplied into the liquid receiving portion 34 by driving the fan 42, whereby the cleaned nozzle hole tip The parts are dried quickly and can be prepared for the next processing step by the processing liquid supply nozzle 21. While the processing liquid supply nozzle 21 is held by the standby means 23 and is on standby, the wafer W coated with the developing solution is rinsed with the rinse liquid (for example, pure water) supplied from the rinse liquid supply nozzle 24. After that, the rinse liquid is shaken off, and the process ends.
【００２３】上記実施例では乾燥ガスを液体受部３４に
開口する乾燥ガス供給口４４から供給する場合について
説明したが、必ずしもこのような構造とする必要はな
く、図４に示すように、ノズル保持体３１の長手方向と
直交する方向の両側壁４５に沿って乾燥ガス通路４６を
設け、この乾燥ガス通路４６から液体受部３４の側方に
向って開口する複数の乾燥ガス供給口４７を適宜間隔を
おいて直線状に設ける構造としてもよい。このように構
成することにより、乾燥ガスが均一にノズル全体に供給
され、ノズル孔先端部の洗浄と均一な乾燥を行うことが
できる。この場合、乾燥ガス供給口４７は液体受部３４
の両側に設けてあるが、乾燥ガス供給口４７は必ずしも
液体受部３４の両側に設ける必要はなく、片側のみに設
けてもよい。In the above embodiment, the case where the dry gas is supplied from the dry gas supply port 44 opening in the liquid receiving portion 34 has been described, but it is not always necessary to have such a structure, and as shown in FIG. A dry gas passage 46 is provided along both side walls 45 in a direction orthogonal to the longitudinal direction of the holding body 31, and a plurality of dry gas supply ports 47 opening from the dry gas passage 46 to the side of the liquid receiving portion 34 are provided. The structure may be linearly provided with appropriate intervals. With this configuration, the dry gas is uniformly supplied to the entire nozzle, and the tip of the nozzle hole can be cleaned and uniformly dried. In this case, the dry gas supply port 47 is connected to the liquid receiving portion 34.
Although the dry gas supply ports 47 are not necessarily provided on both sides of the liquid receiving portion 34, they may be provided on only one side.
【００２４】なお、図４において、その他の部分は上記
第一実施例と同じであるので、同一部分には同一符号を
付して、その説明は省略する。In FIG. 4, the other parts are the same as those in the first embodiment, so the same parts are designated by the same reference numerals and the description thereof is omitted.
【００２５】また、上記実施例では洗浄液を液体受部３
４内に供給して洗浄液Ｌの溢流によってノズル孔先端部
を洗浄する場合について説明したが、洗浄液Ｌに代えて
処理液供給ノズル２１の矩形容器２６内に収容される処
理液Ｍを液体受部３４内に供給し、上記と同様に溢流さ
せることにより、ノズル孔先端部を洗浄することも可能
である。また、洗浄後の乾燥を必要としない場合には上
記乾燥ガス供給口４４又は乾燥ガス供給口４７を設けな
くてもよい。Further, in the above embodiment, the cleaning liquid is supplied to the liquid receiving portion 3
The case where the tip of the nozzle hole is cleaned by supplying the cleaning liquid L to the inside of the rectangular container 26 in the rectangular container 26 of the processing liquid supply nozzle 21 instead of the cleaning liquid L is described. It is also possible to wash the tip of the nozzle hole by supplying it into the portion 34 and causing it to overflow in the same manner as described above. Further, when the drying after cleaning is not required, the dry gas supply port 44 or the dry gas supply port 47 may not be provided.
【００２６】なお、上記実施例では被処理体が半導体ウ
エハの場合について説明したが必ずしも被処理体は半導
体ウエハに限られるものではなく、例えばＬＣＤ基板、
ガラス基板あるいはプリント基板等について同様に処理
液を被着するものにも適用できるものである。また、上
記実施例では処理装置をレジスト塗布現像装置に適用し
た場合について説明したが、レジスト塗布現像装置以外
にも、例えばエッチング液塗布処理や磁性液塗布処理等
を行う装置にも適用できることは勿論である。In the above embodiment, the case where the object to be processed is a semiconductor wafer has been described, but the object to be processed is not necessarily limited to the semiconductor wafer, and for example an LCD substrate,
It can also be applied to a glass substrate, a printed circuit board or the like to which the treatment liquid is applied. Further, in the above-mentioned embodiments, the case where the processing apparatus is applied to the resist coating and developing apparatus has been described, but it is needless to say that the processing apparatus can be applied not only to the resist coating and developing apparatus but also to an apparatus for performing etching solution coating processing, magnetic liquid coating processing and the like. Is.
【００２７】[0027]
【発明の効果】以上に説明したように、この発明の処理
装置は上記のように構成されているので、以下のような
効果が得られる。As described above, since the processing apparatus of the present invention is constructed as described above, the following effects can be obtained.
【００２８】１）請求項１記載の処理装置によれば、不
使用時の処理液供給ノズルを保持する待機手段に、ノズ
ル孔の先端部を包囲し得るように配設される樋状の液体
受部を具備するので、処理工程を終えた処理液供給ノズ
ルの待機中に、ノズル孔に付着する処理液を洗浄するこ
とができ、以後の処理工程における処理液供給の均一化
が図れると共に、被処理体の汚染を防止することができ
る。1) According to the processing apparatus of the first aspect, a trough-shaped liquid is arranged in the standby means for holding the processing liquid supply nozzle when not in use so as to surround the tip of the nozzle hole. Since the receiving portion is provided, the treatment liquid adhering to the nozzle holes can be washed while the treatment liquid supply nozzle that has finished the treatment process is on standby, and the treatment liquid can be supplied uniformly in the subsequent treatment steps. It is possible to prevent contamination of the object to be processed.
【００２９】２）請求項２記載の処理装置によれば、液
体受部内又は液体受部の側方に設けられたガス供給口か
ら乾燥ガスを供給するので、洗浄後のノズル孔先端部を
均一かつ迅速に乾燥することができ、被処理体の処理作
業を能率良く行うことができる。2) According to the processing apparatus of the second aspect, since the dry gas is supplied from the gas supply port provided in the liquid receiving portion or on the side of the liquid receiving portion, the tip end portion of the nozzle hole after cleaning is made uniform. In addition, it can be dried quickly, and the work of treating the object can be efficiently performed.
【図１】この発明の処理装置をレジスト塗布現像装置に
適用した一実施例を示す概略平面図である。FIG. 1 is a schematic plan view showing an embodiment in which the processing apparatus of the present invention is applied to a resist coating / developing apparatus.
【図２】この発明の処理装置の要部の一例を示す断面図
である。FIG. 2 is a sectional view showing an example of a main part of the processing apparatus of the present invention.
【図３】この発明における待機手段の一例を示す断面斜
視図である。FIG. 3 is a cross-sectional perspective view showing an example of a standby means according to the present invention.
【図４】この発明の処理装置の別の実施例の要部を示す
断面図である。FIG. 4 is a cross-sectional view showing the main parts of another embodiment of the processing apparatus of the present invention.
２１ 処理液供給ノズル ２２ ノズル孔 ２３ 待機手段 ３１ ノズル保持体 ３２ 開口部 ３４ 液体受部 ３７ Ｕ字状溝 ３９ 洗浄液兼乾燥ガス供給口 ４３ 乾燥ガス供給源 ４４ 乾燥ガス供給口 ４６ 乾燥ガス通路 ４７ 乾燥ガス供給口 Ｌ 洗浄液 Ｍ 現像液（処理液） 21 Processing Liquid Supply Nozzle 22 Nozzle Hole 23 Standby Means 31 Nozzle Holder 32 Opening 34 Liquid Receiving Section 37 U-Shaped Groove 39 Cleaning Liquid / Dry Gas Supply Port 43 Dry Gas Supply Source 44 Dry Gas Supply Port 46 Dry Gas Passage 47 Drying Gas supply port L Cleaning liquid M Developer (treatment liquid)
Claims (2)
のノズル孔を配列する処理液供給ノズルと、不使用時の
上記処理液供給ノズルを保持する待機手段とを具備する
処理装置において、 上記待機手段は、上記ノズル孔の先端部を包囲し得るよ
うに配設される樋状の液体受部を具備し、 上記液体受部内に洗浄液又は処理液を溢流して上記ノズ
ル孔先端部を洗浄することを特徴とする処理装置。1. A processing apparatus comprising a processing liquid supply nozzle having a large number of nozzle holes for dropping a processing liquid on the surface of an object to be processed, and a standby means for holding the processing liquid supply nozzle when not in use. The standby means includes a trough-shaped liquid receiving portion arranged so as to surround the tip end portion of the nozzle hole, and the cleaning liquid or the processing liquid overflows into the liquid receiving portion to allow the tip end portion of the nozzle hole to overflow. A processing device for cleaning the above.
給口を設けてなることを特徴とする請求項１記載の処理
装置。2. The processing apparatus according to claim 1, wherein a gas supply port is provided inside or at a side of the liquid receiving portion.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3351192A JP2890081B2 (en) | 1991-12-13 | 1991-12-13 | Processing device and processing method |
| US07/988,797 US5275658A (en) | 1991-12-13 | 1992-12-10 | Liquid supply apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3351192A JP2890081B2 (en) | 1991-12-13 | 1991-12-13 | Processing device and processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05166715A true JPH05166715A (en) | 1993-07-02 |
| JP2890081B2 JP2890081B2 (en) | 1999-05-10 |
Family
ID=18415680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3351192A Expired - Lifetime JP2890081B2 (en) | 1991-12-13 | 1991-12-13 | Processing device and processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2890081B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6210481B1 (en) | 1998-05-19 | 2001-04-03 | Tokyo Electron Limited | Apparatus and method of cleaning nozzle and apparatus of processing substrate |
| JP2001334198A (en) * | 2000-03-24 | 2001-12-04 | Tokyo Electron Ltd | Coat processing method and coat processing device |
| JP2008118027A (en) * | 2006-11-07 | 2008-05-22 | Disco Abrasive Syst Ltd | Protective-film coating device |
| US10700166B2 (en) | 2012-05-31 | 2020-06-30 | Tokyo Electron Limited | Nozzle cleaning device, nozzle cleaning method, and substrate processing apparatus |
-
1991
- 1991-12-13 JP JP3351192A patent/JP2890081B2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6210481B1 (en) | 1998-05-19 | 2001-04-03 | Tokyo Electron Limited | Apparatus and method of cleaning nozzle and apparatus of processing substrate |
| US6287390B2 (en) | 1998-05-19 | 2001-09-11 | Tokyo Electron Limited | Apparatus and method of cleaning nozzle and apparatus of processing substrate |
| JP2001334198A (en) * | 2000-03-24 | 2001-12-04 | Tokyo Electron Ltd | Coat processing method and coat processing device |
| JP2008118027A (en) * | 2006-11-07 | 2008-05-22 | Disco Abrasive Syst Ltd | Protective-film coating device |
| US10700166B2 (en) | 2012-05-31 | 2020-06-30 | Tokyo Electron Limited | Nozzle cleaning device, nozzle cleaning method, and substrate processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2890081B2 (en) | 1999-05-10 |
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