JPH05166607A - Composite varistor - Google Patents
Composite varistorInfo
- Publication number
- JPH05166607A JPH05166607A JP3351971A JP35197191A JPH05166607A JP H05166607 A JPH05166607 A JP H05166607A JP 3351971 A JP3351971 A JP 3351971A JP 35197191 A JP35197191 A JP 35197191A JP H05166607 A JPH05166607 A JP H05166607A
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- sintered body
- composite
- capacitance
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えばノイズ吸収素子
として採用されるＳｒＴｉＯ3 系複合バリスタに関し、
特に非直線係数を小さくすることなくバリスタ電圧を低
くしてノイズ吸収特性を向上でき、しかも素子を小型化
した場合の静電容量の低下を回避して周波数特性を向上
できるように改善されたバリスタに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a SrTiO 3 -based composite varistor used as, for example, a noise absorbing element,
In particular, the varistor is improved so that the noise absorption characteristics can be improved by lowering the varistor voltage without reducing the nonlinear coefficient, and further, the frequency characteristics can be improved by avoiding the decrease in capacitance when the element is downsized. Regarding
【０００２】[0002]
【従来の技術】従来から、印加電圧に応じて抵抗値が非
直線的に変化するＳｒＴｉＯ3 系バリスタは、静電容量
が大きいことから高周波ノイズ吸収特性に優れており、
電源やマイクロモータのノイズ吸収素子として広く用い
られている。このような複合バリスタとして、従来、リ
ングバリスタが知られており、これはリング状の焼結体
の一主面上に複数の電極を形成した構造となっている。
また、近年、マイクロモータ等における駆動電圧の低電
圧化に伴って、より小型化に対応できるとともに、非直
線係数及び周波数特性に優れた素子が要請されている。2. Description of the Related Art Conventionally, a SrTiO 3 varistor whose resistance value changes non-linearly according to an applied voltage is excellent in high frequency noise absorption characteristics because of its large capacitance.
It is widely used as a noise absorbing element for power supplies and micromotors. As such a composite varistor, a ring varistor is conventionally known, which has a structure in which a plurality of electrodes are formed on one main surface of a ring-shaped sintered body.
In addition, in recent years, along with the reduction of driving voltage in micromotors and the like, there has been a demand for an element which can be more downsized and which is excellent in nonlinear coefficient and frequency characteristics.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来の複合バリスタでは、バリスタ電圧を低電圧化すると
非直線係数が小さくなることから、トランジェントノイ
ズの吸収特性が悪化するという問題点がある。また、バ
リスタ素子を小型化すると、それだけ電極面積が小さく
なることから、静電容量も小さくなるとともに、リング
バリスタでは直列抵抗成分が大きくなり、その結果容量
分散が大きくなって高周波数特性が悪化するという問題
点がある。However, the above-mentioned conventional composite varistor has a problem that the transient noise absorption characteristic is deteriorated because the nonlinear coefficient becomes small when the varistor voltage is lowered. Further, as the size of the varistor element becomes smaller, the electrode area becomes smaller accordingly, so that the capacitance also becomes smaller, and in the ring varistor, the series resistance component becomes larger, and as a result, the capacitance dispersion becomes larger and the high frequency characteristics deteriorate. There is a problem.
【０００４】本発明は上記従来の状況に鑑みてなされた
もので、非直線係数を低下させることなく低電圧化を実
現できるとともに、素子を小型化する場合の静電容量の
低下を回避できる複合バリスタを提供することを目的と
している。The present invention has been made in view of the above-mentioned conventional situation, and it is possible to realize a lower voltage without lowering the nonlinear coefficient and to prevent a decrease in capacitance when the element is downsized. Intended to provide baristas.
【０００５】[0005]
【課題を解決するための手段】そこで本発明は、半導体
セラミックからなる焼結体にＣｏをＣｏＯに換算して0.
01〜0.1mol％含有させ、かつ上記焼結体にホウケイ酸亜
鉛を0.1 〜1.5 wt％拡散させたことを特徴とする複合バ
リスタである。ここで、上記Ｃｏの含有量を0.01〜0.1m
ol％に限定したのは、これを0.01mol％以下にすると高
周波での静電容量が小さくなって周波数特性の改善効果
が得られなくなるからであり、また0.1mol％を越えると
静電容量は大きくなるものの、非直線係数が小さくなる
からである。また、上記ホウケイ酸亜鉛の拡散量を0.1
〜1.5 wt％の範囲としたのは、この範囲を外れると非直
線係数が小さくなり、ノイズ吸収特性の改善効果が得ら
れなくなるからである。Therefore, according to the present invention, in a sintered body made of a semiconductor ceramic, Co is converted to CoO and converted to CoO.
It is a composite varistor characterized by containing 0.1 to 0.1 mol% of zinc borosilicate and diffusing 0.1 to 1.5 wt% of zinc borosilicate into the above sintered body. Here, the content of Co is 0.01 to 0.1 m
The reason for limiting it to ol% is that if it is set to 0.01 mol% or less, the capacitance at high frequency becomes small and the effect of improving frequency characteristics cannot be obtained. This is because the non-linear coefficient becomes smaller although it becomes larger. Further, the diffusion amount of the zinc borosilicate is 0.1
The reason why the range is up to 1.5 wt% is that if it deviates from this range, the nonlinear coefficient becomes small and the effect of improving the noise absorption characteristics cannot be obtained.
【０００６】[0006]
【作用】本発明に係る複合バリスタによれば、焼結体に
ＣｏをＣｏＯに換算して0.01〜0.1 mol ％を含有させた
ので、バリスタ素子の小型化により電極面積が小さくな
っても静電容量を大きくでき、しかも高周波での容量の
分散を小さくできることから、小型化を可能にしながら
周波数特性を改善できる。また、上記焼結体にホウケイ
酸亜鉛を0.1 〜1.5 wt％拡散させたので、低電圧化した
場合の非直線係数を確保でき、それだけノイズ吸収特性
を向上できる。According to the composite varistor of the present invention, since 0.01 to 0.1 mol% of Co is converted to CoO in the sintered body, the electrostatic capacitance is reduced even if the electrode area is reduced due to the miniaturization of the varistor element. Since the capacity can be increased and the dispersion of the capacity at high frequencies can be reduced, the frequency characteristics can be improved while enabling miniaturization. Further, since zinc borosilicate is diffused in the sintered body in an amount of 0.1 to 1.5 wt%, the nonlinear coefficient can be secured when the voltage is lowered, and the noise absorption characteristic can be improved accordingly.
【０００７】[0007]
【実施例】以下、本発明の実施例を図について説明す
る。図１は、本発明の一実施例による複合バリスタを説
明するための図である。本実施例では、リングバリスタ
の一製造方法を説明し、これにより得られたバリスタの
効果を確認するために行った試験結果について説明す
る。まず、本実施例のリングバリスタの製造方法につい
て説明する。Ｓｒ0.9 Ｃａ0.1 Ｅｒ0.005 ＴｉＯ3 とな
るようＳｒＣＯ3,ＣａＣＯ3,Ｅｒ2Ｏ3,ＴｉＯ2 を配合
し、これに純水を加えボールミルで粉砕混合してスラリ
ーを形成する。このスラリーを脱水乾燥させた後、造粒
し、1200℃で２時間仮焼成した後、再び粉砕して仮焼成
粉を形成する。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram for explaining a composite varistor according to an embodiment of the present invention. In this example, a method for manufacturing a ring varistor will be described, and the test results performed to confirm the effect of the varistor obtained thereby will be described. First, a method of manufacturing the ring varistor of this embodiment will be described. Sr 0.9 Ca 0.1 Er 0.005 blending TiO 3 become as SrCO 3, CaCO 3, Er 2 O 3, TiO 2, this was pulverized and mixed in a ball mill adding pure water to form a slurry. The slurry is dehydrated and dried, granulated, calcined at 1200 ° C. for 2 hours, and then pulverized again to form a calcined powder.
【０００８】次に、上記仮焼成粉に、ＣｏをＣｏＯ3 に
換算して0.01〜0.1 mol ％添加するとともに、ＳｉＯ2
を0.05wt％を添加する。これにバインダー及び純水を加
えてボールミルで粉砕混合し、これによりスラリーを形
成する。Next, 0.01 to 0.1 mol% of Co converted to CoO 3 is added to the above calcined powder, and SiO 2 is added.
0.05 wt% is added. A binder and pure water are added to this, and the mixture is ground and mixed by a ball mill to form a slurry.
【０００９】上記スラリーをスプレー乾燥・造粒してセ
ラミック粉末を形成し、このセラミック粉末をプレスに
より圧力を加えて、外径10mmφ, 内径６mmφ, 厚さ0.8m
m のリング状の成形体に形成する。次いで、この成形体
を昇温加熱してバインダーを燃焼させた後、還元性雰囲
気中にて1400℃で３時間焼成する。これにより、図１に
示すようなリング状の焼結体２を得る。The slurry is spray-dried and granulated to form a ceramic powder, and the ceramic powder is pressed by a press to have an outer diameter of 10 mmφ, an inner diameter of 6 mmφ and a thickness of 0.8 m.
It is formed into a ring-shaped molded body of m. Next, the molded body is heated and heated to burn the binder, and then fired in a reducing atmosphere at 1400 ° C. for 3 hours. As a result, a ring-shaped sintered body 2 as shown in FIG. 1 is obtained.
【００１０】このようにして得られた焼結体２に、これ
の重量に対して0.1 〜1.5 wt％のホウケイ酸亜鉛を塗布
し、これを850 ℃に加熱して30分熱処理する。これによ
り上記焼結体２の表面部分にホウケイ酸亜鉛が浸透拡散
することとなる。On the sintered body 2 thus obtained, 0.1 to 1.5 wt% of zinc borosilicate is applied to the weight of the sintered body 2, which is heated to 850 ° C. and heat-treated for 30 minutes. This causes zinc borosilicate to permeate and diffuse into the surface portion of the sintered body 2.
【００１１】最後に、上記焼結体２の一主面２ａ上に、
２mm程度のギャップｔを設けて３つの電極３を形成す
る。これにより本実施例のリングバリスタ１が製造され
る。Finally, on one main surface 2a of the sintered body 2,
Three electrodes 3 are formed with a gap t of about 2 mm. As a result, the ring varistor 1 of this embodiment is manufactured.
【００１２】[0012]
【表１】 [Table 1]
【００１３】表１は、上述の方法により製造されたリン
グバリスタ１の効果を確認するために行った試験結果を
示す。この試験は、表１に示すように、Ｃｏの添加量を
０〜0.5 mol ％の範囲で変化させて焼結体を形成し、こ
の焼結体のホウケイ酸亜鉛の塗布量を0.5 wt％とした場
合のバリスタ電圧Ｖ10mA，非直線係数α，及び静電容量
nFを測定した( 表中、NO. １〜NO. １０）。また、Ｃｏ
の添加量を0.05mol ％とし、ホウケイ酸亜鉛の塗布量を
0.1 〜2.0 wt％の範囲で変化させた場合の上記各電気的
特性を測定した( 表中、NO. １１〜NO. １８）。さら
に、モニターとして従来のリングバリスタについても同
様の試験を行った（表中、NO. １９，NO.２０）。Table 1 shows the results of tests conducted to confirm the effect of the ring varistor 1 manufactured by the above method. In this test, as shown in Table 1, the amount of Co added was changed in the range of 0 to 0.5 mol% to form a sintered body, and the amount of zinc borosilicate applied to this sintered body was set to 0.5 wt%. Varistor voltage V 10mA , nonlinear coefficient α, and capacitance
The nF was measured (NO. 1 to NO. 10 in the table). Also, Co
The amount of zinc borosilicate applied is 0.05 mol%.
Each of the above electrical characteristics was measured in the case of changing in the range of 0.1 to 2.0 wt% (NO. 11 to NO. 18 in the table). Further, the same test was performed on a conventional ring varistor as a monitor (NO. 19, NO. 20 in the table).
【００１４】表１からも明らかなように、Ｃｏ量を０〜
0.005 mol ％とした比較試料（NO.１〜NO. ４）の場合
は、１MHz の高周波での静電容量が64.7〜70.3ｎＦと小
さくなっており、従来試料（NO. １９，２０）と略同様
に周波数特性が低い。また、Ｃｏ量を0.3 〜0.5 mol ％
とした比較試料（NO. ９，NO. １０）の場合は、静電容
量は大きくなるものの、Ｖ10mAが1.1 〜1.3Vと上昇し難
く、かつ非直線係数も1.5 〜2.0 と小さくなっている。
これに対してＣｏ量が0.01〜0.1mol％の範囲内の本実施
例試料（NO. ５〜NO. ８）の場合は、Ｖ10mAが2.2 〜2.
9V、非直線係数が3.7 〜4.9 、静電容量が115.1 〜131.
7nF,96.4〜118.1nF と何れの特性も満足できる値が得ら
れていることがわかる。また、ホウケイ酸亜鉛の塗布量
を1.75〜2.0 wt％とした比較試料（NO. １７，NO. １
８）の場合は、Ｖ10mAが8.4 〜17.6Ｖと上昇し、これに
伴って非直線係数も1.9 〜2.3 と悪化している。これに
対してホウケイ酸亜鉛の塗布量を0.1 〜1.5 wt％の範囲
内とした本実施例試料（NO. １１〜NO. １６）の場合
は、Ｖ10mAが2.2 〜5.8Vと低い値でありながら、非直線
係数は3.4 〜5.0 と向上しており、ノイズ吸収特性が改
善できていることがわかる。As is clear from Table 1, the Co content is 0 to
In the case of the comparative samples (NO.1 to NO.4) with 0.005 mol%, the capacitance at the high frequency of 1MHz is as small as 64.7 to 70.3nF, which is almost same as the conventional samples (NO.19,20). Similarly, the frequency characteristic is low. In addition, the Co content is 0.3 to 0.5 mol%
In the case of the comparative samples (NO. 9 and NO. 10), although the capacitance is large, V 10mA is difficult to rise to 1.1 to 1.3V, and the non-linear coefficient is also small to 1.5 to 2.0. ..
On the other hand, in the case of the sample of this example (NO. 5 to NO. 8) in which the amount of Co is in the range of 0.01 to 0.1 mol%, V 10 mA is 2.2 to 2.
9V, non-linear coefficient 3.7-4.9, capacitance 115.1-131.
It can be seen that satisfactory values were obtained for all characteristics, 7nF and 96.4 to 118.1nF. In addition, a comparative sample in which the coating amount of zinc borosilicate was 1.75 to 2.0 wt% (NO. 17, NO. 1
In the case of 8), V 10mA rises to 8.4 to 17.6V, and the non-linear coefficient deteriorates to 1.9 to 2.3 accordingly. On the other hand, in the case of the samples of this example (NO. 11 to NO. 16) in which the coating amount of zinc borosilicate was within the range of 0.1 to 1.5 wt%, V 10mA was a low value of 2.2 to 5.8V. However, the nonlinear coefficient is improved to 3.4 to 5.0, which shows that the noise absorption characteristics are improved.
【００１５】また、図２は、１KHz 〜10MHz の周波数に
おける静電容量の変化率を示す特性図である。図中、破
線は本実施例試料、実線は従来試料を示す。同図からも
明らかなように、従来試料の場合は、高周波での容量分
散が大きいことから、例えば１MHz での静電容量の変化
率は−50％程度と大きくなっている。これに対して本実
施例試料の場合は、１MHz での静電容量の変化率は−10
％程度と小さく周波数特性が向上していることがわか
る。FIG. 2 is a characteristic diagram showing the rate of change of electrostatic capacitance at frequencies of 1 KHz to 10 MHz. In the figure, the broken line indicates the sample of this example, and the solid line indicates the conventional sample. As is clear from the figure, in the case of the conventional sample, since the capacitance dispersion at high frequency is large, the rate of change in capacitance at 1 MHz is as large as -50%. On the other hand, in the case of the sample of this example, the rate of change in capacitance at 1 MHz is -10.
It can be seen that the frequency characteristic is improved as small as about%.
【００１６】[0016]
【発明の効果】以上のように本発明に係る複合バリスタ
によれば、焼結体にＣｏをＣｏＯに換算して0.01〜0.1
mol ％添加するとともに、ホウケイ酸亜鉛を0.1 〜1.5
wt％拡散したので、非直線係数を小さくすることなくバ
リスタ電圧を低くしてノイズ吸収特性を向上できる効果
があり、さらにバリスタ素子を小型化した場合の静電容
量の低下を回避して周波数特性を向上できる効果があ
る。As described above, according to the composite varistor according to the present invention, the sintered body has 0.01 to 0.1 when Co is converted to CoO.
Add 0.1% to 1.5% zinc borosilicate while adding mol%
Since it has been diffused by wt%, it has the effect of lowering the varistor voltage and improving the noise absorption characteristics without reducing the nonlinear coefficient, and also avoids the reduction in capacitance when miniaturizing the varistor element and avoids frequency characteristics. There is an effect that can improve.
【図１】本発明の一実施例による複合バリスタを説明す
るための斜視図である。FIG. 1 is a perspective view illustrating a composite varistor according to an exemplary embodiment of the present invention.
【図２】上記実施例の効果を確認するために行った試験
結果を示す特性図である。FIG. 2 is a characteristic diagram showing the results of a test conducted to confirm the effects of the above-described examples.
１ リングバリスタ（複合バリスタ） ２ 焼結体 1 Ring varistor (composite varistor) 2 Sintered body
───────────────────────────────────────────────────── フロントページの続き (72)発明者 服部 康次 京都府長岡京市天神２丁目26番10号 株式 会社村田製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Koji Hattori 2-26-10 Tenjin Tenjin, Nagaokakyo, Kyoto Prefecture Murata Manufacturing Co., Ltd.
Claims (1)
体に、ＣｏをＣｏＯに換算して0.01〜0.10mol ％含有さ
せ、かつ上記焼結体にホウケイ酸亜鉛を0.1〜1.5wt％拡
散させたことを特徴とする複合バリスタ。1. A ceramic sintered body having a non-linear voltage characteristic contains 0.01 to 0.10 mol% of Co in terms of CoO, and 0.1 to 1.5 wt% of zinc borosilicate is diffused into the sintered body. A compound varistor characterized by
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35197191A JP3182825B2 (en) | 1991-12-13 | 1991-12-13 | Composite varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35197191A JP3182825B2 (en) | 1991-12-13 | 1991-12-13 | Composite varistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05166607A true JPH05166607A (en) | 1993-07-02 |
| JP3182825B2 JP3182825B2 (en) | 2001-07-03 |
Family
ID=18420887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35197191A Expired - Fee Related JP3182825B2 (en) | 1991-12-13 | 1991-12-13 | Composite varistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3182825B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8146547B2 (en) | 2007-04-16 | 2012-04-03 | Scuderi Group, Llc | Variable valve actuator with a pneumatic booster |
| CN107039182A (en) * | 2016-01-25 | 2017-08-11 | Tdk株式会社 | Electronic unit |
| CN114914042A (en) * | 2022-05-07 | 2022-08-16 | 吉林昱丰电气科技有限公司 | High-energy high-residual-voltage-ratio nonlinear resistor disc and parallel circuit |
-
1991
- 1991-12-13 JP JP35197191A patent/JP3182825B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8146547B2 (en) | 2007-04-16 | 2012-04-03 | Scuderi Group, Llc | Variable valve actuator with a pneumatic booster |
| CN107039182A (en) * | 2016-01-25 | 2017-08-11 | Tdk株式会社 | Electronic unit |
| CN107039182B (en) * | 2016-01-25 | 2020-03-03 | Tdk株式会社 | Electronic component |
| CN114914042A (en) * | 2022-05-07 | 2022-08-16 | 吉林昱丰电气科技有限公司 | High-energy high-residual-voltage-ratio nonlinear resistor disc and parallel circuit |
| CN114914042B (en) * | 2022-05-07 | 2024-02-02 | 吉林昱丰电气科技有限公司 | High-energy high-residual voltage ratio nonlinear resistor and parallel circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3182825B2 (en) | 2001-07-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4987107A (en) | Ceramic composition for reduction-reoxidation type semiconductive capacitor | |
| EP0157276B1 (en) | Voltage-dependent non-linear resistance ceramic composition | |
| JP3319314B2 (en) | Barium titanate-based semiconductor porcelain composition | |
| JPH11297510A (en) | Laminated varistor | |
| JPH05166607A (en) | Composite varistor | |
| JPH10229003A (en) | Varistor, chip-type varistor, and manufacture of varistor | |
| JP3030557B2 (en) | Electronic components using dielectric porcelain materials | |
| JPS61193419A (en) | Reduction/reoxidation type semiconductor capacitor ceramic composition | |
| JPH0442855A (en) | Porcelain composition and its production | |
| JPS6116131B2 (en) | ||
| JP2850355B2 (en) | Ceramic capacitor and method of manufacturing the same | |
| JP2707706B2 (en) | Grain boundary insulating semiconductor ceramic capacitor and method of manufacturing the same | |
| JP3000847B2 (en) | Semiconductor porcelain composition and method for producing the same | |
| JP2808777B2 (en) | Varistor manufacturing method | |
| JPH0785459B2 (en) | Grain boundary insulation type semiconductor ceramic capacitor | |
| JP2725405B2 (en) | Voltage-dependent nonlinear resistor porcelain and method of manufacturing the same | |
| JPS63289706A (en) | Ceramic forming constituent and both semiconductor and dielectric ceramic substrates as well as condenser therewith | |
| JP2773309B2 (en) | Ceramic capacitor and method of manufacturing the same | |
| JPH0684691A (en) | Dielectric ceramic and ceramic capacitor | |
| JPS5849661A (en) | High dielectric constant ceramic composition | |
| JP2646734B2 (en) | Ceramic capacitor and method of manufacturing the same | |
| JP2998586B2 (en) | Semiconductor porcelain composition and method for producing the same | |
| JP2697123B2 (en) | Ceramic capacitor and method of manufacturing the same | |
| JPS6223405B2 (en) | ||
| JPH01289205A (en) | Voltage-dependent nonlinear resistance element and manufacture thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20010327 |
|
| LAPS | Cancellation because of no payment of annual fees |