JPS6223405B2 - - Google Patents
Info
- Publication number
- JPS6223405B2 JPS6223405B2 JP54152569A JP15256979A JPS6223405B2 JP S6223405 B2 JPS6223405 B2 JP S6223405B2 JP 54152569 A JP54152569 A JP 54152569A JP 15256979 A JP15256979 A JP 15256979A JP S6223405 B2 JPS6223405 B2 JP S6223405B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- 2tio
- pbo
- catio
- tio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 claims description 27
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 22
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 18
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 16
- 239000000919 ceramic Substances 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052573 porcelain Inorganic materials 0.000 claims description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 229940126062 Compound A Drugs 0.000 claims description 2
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 8
- 238000010304 firing Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
本発明は温度補償用誘電体磁器組成物に関する
ものでその目的とするところはCaTiO3−
La2O3.2TiO3−PbO.TiO2−Bi2O3.2TiO3−
MgTiO3の５成分系の固容体からなるもので、と
もに高い値で組合される誘電率と温度係数が比較
的小さく且つ高周波での損失角が極めて優れた磁
器組成物を提供しようとするものである。
従来より温度補償用誘電体磁器組成物としては
SrTiO3、CaTiO3、MgTiO3、La2O3.2TiO3等の
組成物が用いられているが、これ等は誘電率が20
〜300、温度係数が＋100〜−3000×10-6／℃の範
囲にあることは公知の事柄である。
これ等の最大の欠点は常温での誘電率と温度係
数の関係は誘電率が大きくなる程温度係数の値も
大きくなり、温度係数の値を小さくすることはお
のずと誘電率も小さくなるという関係にあつた。
従つて、従来の磁器組成物では温度係数が小さ
くなると高い誘電率は得られなかつた。
最近ではカラーテレビ等のIFT回路で使用する
温度補償用磁器コンデンサとして特に温度係数が
小さく且つ大容量で特に高周波での損失角が小さ
く絶縁破壊電圧の優れた温度補償用コンデンサが
要望されるに至つている。
このように温度係数が小さく且つ大容量のコン
デンサを得るには温度係数の小さい例えば、
CaTiO3−HgTiO3−La2O3.2TiO2系の材料を用
い、更に厚みを薄くする以外に方法はなかつた。
しかしながら厚みを薄くすることが量産工程に
おいては、反りとかワレが発生し歩留りを悪く
し、品質的には耐電圧の低下をきたし、信頼性等
においても不安定な要素となつていた。
本発明はこれ等前述の欠点に着目して改善した
ものであり、それぞれの材料のもつ特性を有効に
組合せ生かすと共に前述の欠点を除去したもので
あり、誘電率が高く、誘電率の温度係数が−1250
〜−700×10-6／℃と比較的小さい値を示し、且
つＱが高いことを特徴とする温度補償用磁器組成
物を提供したものであり、
その構成は
「CaTiO3−La2O3.2TiO3−PbO.TiO2−
Bi2O3.2TiO3−MgTiO3系磁器組成物で酸化物に
換算して
CaO……6.82〜31.50重量％
La2O3……0.89〜34.76重量％
Bi2O3……1.45〜17.37重量％
TiO2……37.14〜51.69重量％
PbO……4.60〜30.86重量％
MgO……0.16〜3.35重量％の範囲からなる組成物
を主成分とすることを特徴とする温度補償用誘電
体磁器組成物を第１の発明とし、
CaTiO3−La2O3.2TiO3−PbO.TiO2−
Bi2O3.2TiO3−MgTiO3系磁器組成物で酸化物に
換算して
CaO……6.82〜31.50重量％
La2O3……0.89〜34.76重量％
Bi2O3……1.45〜17.37重量％
TiO2……37.14〜51.69重量％
PbO……4.60〜30.86重量％
MgO……0.16〜3.35重量％の範囲からなる主成分
とする組成物に対して、副成分としてMn、及び
希土類元素化合物の１種あるいは１種以上含む事
を特徴とする温度補償用誘電体磁器組成物」を第
２の発明とすることを特徴とするものである。
つまりCaTiO3−La2O3.2TiO2−PbO.TiO2−
Bi2O3.2TiO3−MgTiO3の５成分の、その成分割
合を変化させることによつて誘電率温度係数を−
1250×10-6／℃〜−700×10-6／℃の範囲で自由
に選択することができ、これ等の磁器は誘電率が
高くＱ値も大きい。
また焼成温度が比較的低く、従来のCaTiO3−
La2O3.2TiO2−MgTiO3系の1300℃〜1340℃焼成
していたものが約100℃低い1200℃〜1240℃で容
易に焼結が可能である。
以下本発明を実施例に従つて具体的に内容を説
明する。出発原料としてCaCO3、TiO2、La2O3、
PbO、Bi2O3、MgCO3を市販の工業用原料を用
い、CaTiO3、La2O3.2TiO2、PbO.TiO2、
Bi2O3.2TiO3、MgTiO2の形のチタン酸塩として
あらかじめ製造しておき第１表に挙げた成分比率
に調合した。この際、PbO.TiO2、Bi2O3.2TiO2は
仮焼なしの生原料PbO、TiO2、Bi2O3、として用
いても同様な特性が得られる。混合は磁器ポツト
ミルで、20時間湿式混合をおこなつた。混合物を
脱水乾燥後、粗粉砕を行ない有機バインダーを加
えポツトミルで20時間湿式粉砕を行ない粒にし
た。成形には16.5φ×0.6＝の大きさの円板を約
3t／cm2の圧力で加圧成形して、焼成は1200℃〜
1240℃の温度範囲で２時間保持して焼成をおこな
つた。このようにして得られた円板形の磁器に銀
電極を780℃で焼付けてリード線を半田付けし、
洗浄後各々の混合割合の異なる組成の電気的特性
の測定をおこなつた結果を第一表に示した。
測定条件としては室温が20℃で静電容量及びＱ
値はYEW製のＱメーター（4043A）を使用し
た。
温度係数はブントン製キヤパシタスブリツジ
（モデル−74D）、
恒温〓はエレクトロプト社製（EW−102）を
使用した。又、本実験の調合において焼成時の還
元性を防止する為、酸化剤としてMnCO3を0.20
重量％を添加せしめた。同時に焼結性を良くする
為に鉱化剤として希土類元素化合物として、
CeO2.La2O3等の添加剤を加えると一層の改良効
果が促進される。
このような製造条件で製造した組成比の異なる
組成物の電気特性値を第１表に示す。
第１表中試料No.
1.8.13.19.29.34.36.41.42.43.45.53は本発明範囲外
のもので比較の為記述した。
次に特許請求の範囲の限定理由を述べる。
本発明の限定理由については第１表に示す通
り、固有の特性を持つ相互の組成比を変化させて
Ｑ値、誘電率（εＳ）、温度係数（T.C）が多様
に変化するので第１図〜第３図に基づいて説明す
る。
The present invention relates to a dielectric ceramic composition for temperature compensation, and its purpose is to
La 2 O 3 .2TiO 3 −PbO.TiO 2 −Bi 2 O 3 .2TiO 3 −
The purpose is to provide a ceramic composition consisting of a five-component solid body of MgTiO 3 , which has a relatively small dielectric constant and temperature coefficient, both of which have high values, and an extremely excellent loss angle at high frequencies. be. Conventionally, as a dielectric ceramic composition for temperature compensation,
Compositions such as SrTiO 3 , CaTiO 3 , MgTiO 3 , La 2 O 3 .2TiO 3 are used, but these have a dielectric constant of 20.
~300, and the temperature coefficient is in the range of +100 to -3000×10 -6 /°C. The biggest drawback of these is that the relationship between the dielectric constant and the temperature coefficient at room temperature is that the larger the dielectric constant, the larger the temperature coefficient, and as the temperature coefficient decreases, the dielectric constant also decreases. It was hot. Therefore, with conventional ceramic compositions, a high dielectric constant could not be obtained when the temperature coefficient became small. Recently, there has been a demand for temperature-compensating ceramic capacitors that have particularly small temperature coefficients, large capacitances, small loss angles at high frequencies, and excellent dielectric breakdown voltages as temperature-compensating ceramic capacitors used in IFT circuits such as color televisions. It's on. In order to obtain a large capacity capacitor with a small temperature coefficient, for example,
There was no other way than to use a CaTiO 3 -HgTiO 3 -La 2 O 3 .2TiO 2 material and further reduce the thickness. However, in the mass production process, thinning the thickness causes warping and cracking, which reduces yield, reduces quality, and causes instability in reliability. The present invention focuses on and improves the above-mentioned drawbacks, and eliminates the above-mentioned drawbacks while effectively combining the characteristics of each material. is −1250
The present invention provides a temperature-compensating porcelain composition that exhibits a relatively small value of ~-700×10 -6 /℃ and is characterized by a high Q, and its composition is “CaTiO 3 −La 2 O 3 .2TiO 3 −PbO.TiO 2 −
Bi 2 O 3 .2TiO 3 −MgTiO 3 based porcelain composition, calculated as oxide CaO...6.82 to 31.50% by weight La 2 O 3 ...0.89 to 34.76% by weight Bi 2 O 3 ...1.45 to 17.37% by weight % TiO2 ...37.14-51.69% by weight PbO...4.60-30.86% by weight MgO...0.16-3.35% by weight A dielectric ceramic composition for temperature compensation, characterized in that the main component is a composition in the range of 0.16-3.35% by weight. is the first invention, CaTiO 3 −La 2 O 3 .2TiO 3 −PbO.TiO 2 −
Bi 2 O 3 .2TiO 3 −MgTiO 3 based porcelain composition, calculated as oxide CaO...6.82 to 31.50% by weight La 2 O 3 ...0.89 to 34.76% by weight Bi 2 O 3 ...1.45 to 17.37% by weight % TiO2 ...37.14-51.69% by weight PbO...4.60-30.86% by weight MgO...0.16-3.35% by weight, Mn as a subcomponent and a rare earth element compound A second invention is a "temperature-compensating dielectric ceramic composition characterized by containing one or more of the above." In other words, CaTiO 3 −La 2 O 3 .2TiO 2 −PbO.TiO 2 −
By changing the component ratio of the five components Bi 2 O 3 .2TiO 3 -MgTiO 3 , the dielectric constant temperature coefficient -
It can be freely selected within the range of 1250×10 -6 /°C to -700×10 -6 /°C, and these porcelains have a high dielectric constant and a large Q value. In addition, the firing temperature is relatively low, and compared to conventional CaTiO 3 −
The La 2 O 3 .2TiO 2 -MgTiO 3 system, which was fired at 1300°C to 1340°C, can be easily sintered at about 100°C lower, at 1200°C to 1240°C. The present invention will be specifically explained below based on examples. CaCO 3 , TiO 2 , La 2 O 3 as starting materials,
Using commercially available industrial raw materials for PbO, Bi 2 O 3 and MgCO 3 , CaTiO 3 , La 2 O 3 .2TiO 2 , PbO.TiO 2 ,
Titanates in the form of Bi 2 O 3 .2TiO 3 and MgTiO 2 were prepared in advance and mixed in the component ratios listed in Table 1. At this time, similar characteristics can be obtained even if PbO.TiO 2 and Bi 2 O 3 .2TiO 2 are used as raw raw materials PbO, TiO 2 and Bi 2 O 3 without calcination. The mixture was wet mixed in a porcelain pot mill for 20 hours. After dehydrating and drying the mixture, it was roughly pulverized, an organic binder was added, and wet pulverization was performed in a pot mill for 20 hours to form particles. For molding, a disk with a size of 16.5φ x 0.6= approx.
Pressure molded at a pressure of 3t/cm 2 and fired at 1200℃~
Firing was carried out by holding at a temperature range of 1240°C for 2 hours. Silver electrodes were baked at 780°C on the disc-shaped porcelain obtained in this way, and lead wires were soldered.
After washing, the electrical characteristics of the compositions with different mixing ratios were measured and the results are shown in Table 1. The measurement conditions are room temperature 20℃, capacitance and Q
The value was measured using a Q meter (4043A) manufactured by YEW. For the temperature coefficient, a Bunton capacitor bridge (Model-74D) was used, and for the constant temperature, an Electropt (EW-102) was used. In addition, in the preparation of this experiment, 0.20% of MnCO 3 was added as an oxidizing agent to prevent reducibility during firing.
% by weight was added. At the same time, in order to improve sinterability, rare earth element compounds are used as mineralizers.
Addition of additives such as CeO 2 .La 2 O 3 promotes further improvement effects. Table 1 shows the electrical property values of compositions having different composition ratios manufactured under such manufacturing conditions. Sample No. in Table 1
1.8.13.19.29.34.36.41.42.43.45.53 is outside the scope of the present invention and is described for comparison. Next, the reasons for limiting the scope of the claims will be described. As shown in Table 1, the reason for the limitation of the present invention is that the Q value, dielectric constant (εS), and temperature coefficient (TC) vary in various ways by changing the mutual composition ratio with unique characteristics. 〜Explained based on FIG.
【表】【table】
【表】
第１図は本発明の基礎となるCaTiO3−
La2O3.2TiO2−PbO.TiO2の領域を示す三元組成
図であり、CaTiO3が90.0mo％以下になると温度
係数（T.C）が大きくなり50.0mo％以下では焼結
が困難となりＱ値が悪化する。
又、La2O3.2TiO2は30.0mol％以上では誘電率
が低下し、Ｑ値が悪化し焼結困難となる。
又、20.0mol％以下では温度係数（T.C）が大
きくなりCaTiO3本来の特性に近ずく為に本発明
の意に反する。
更にPbO.TiO2は誘電率が向上する効果を有す
るが5.0mol％以下では誘電率（εＳ）が低く、
35.0mol％以上では温度係数が大きくなりＱ値が
悪化する。
第２図は第１図に示すCaTiO3−La2O3.2TiO2
−PbO.TiO2三成分に対する、Bi2O3.2TiO2の領域
及び効果を示すものである。Bi2O3.2TiO2は温度
特性をあまり変化させないで誘電率を大きくし、
焼成温度を下げる効果を有するが2.0重量％以下
では含有効果がなく、35.0重量％以上ではＱ値が
悪化し、更に焼成温度幅が狭くなるので望ましく
ない。
第３図は第２図と同様にMgTiO3の領域及び効
果を示すものである。
MgTiO3は、温度特性をあまり変化させずに誘
電率を大きくする効果があり、0.5重量％以下で
はMgTiO3の効果がなく、15.0重量％以上では誘
電率が低下して実用的でない。
叙上の通り、本発明はCaTiO3−La2O3.2TiO2
−PbO.TiO2−Bi2O3.2TiO3−MgTiO3系の５成分
で構成し、各成分の持つ固有の特性を持つ相互の
組成比を適宜変化させることにより、高い誘電率
でしかも誘電率の温度係数（T.C）が、−1250〜
−700×10-6／℃と極めて優れており、且つＱ値
の高い良好な性質を有する
温度補償用誘電体磁器組成物を可能としたもの
である。[Table] Figure 1 shows CaTiO 3 - which is the basis of the present invention.
This is a ternary composition diagram showing the region of La 2 O 3 .2TiO 2 −PbO.TiO 2 . When CaTiO 3 is below 90.0 mo%, the temperature coefficient (TC) increases, and below 50.0 mo%, sintering becomes difficult. Q value deteriorates. Moreover, if La 2 O 3 .2TiO 2 exceeds 30.0 mol %, the dielectric constant decreases, the Q value deteriorates, and sintering becomes difficult. Moreover, if it is less than 20.0 mol %, the temperature coefficient (TC) becomes large and approaches the original characteristics of CaTiO 3 , which is contrary to the intention of the present invention. Furthermore, PbO.TiO 2 has the effect of improving the dielectric constant, but below 5.0 mol%, the dielectric constant (εS) is low;
If it exceeds 35.0 mol%, the temperature coefficient becomes large and the Q value deteriorates. Figure 2 shows the CaTiO 3 −La 2 O 3 .2TiO 2 shown in Figure 1.
- The area and effect of Bi 2 O 3 .2TiO 2 on the three components of PbO.TiO 2 are shown. Bi 2 O 3 .2TiO 2 increases the dielectric constant without changing the temperature characteristics much,
Although it has the effect of lowering the firing temperature, if the content is less than 2.0% by weight, there is no effect, and if it is more than 35.0% by weight, the Q value deteriorates and the firing temperature range becomes narrower, which is not desirable. Similar to FIG. 2, FIG. 3 shows the area and effects of MgTiO 3 . MgTiO 3 has the effect of increasing the dielectric constant without significantly changing the temperature characteristics. If it is less than 0.5% by weight, MgTiO 3 has no effect, and if it is more than 15.0% by weight, the dielectric constant decreases and is not practical. As mentioned above, the present invention is based on CaTiO 3 −La 2 O 3 .2TiO 2
-PbO.TiO 2 -Bi 2 O 3 .2TiO 3 -MgTiO 3 It is composed of five components, each with its own unique characteristics, and by appropriately changing the mutual composition ratio, it has a high dielectric constant and a dielectric The temperature coefficient (TC) of the rate is −1250 ~
This has made it possible to create a dielectric ceramic composition for temperature compensation which has an extremely excellent property of -700×10 -6 /°C and a high Q value.
第１図は本発明の基礎となるCaTiO3−
La2O3.2TiO2−PbO.TiO2の領域を示す三元組成
図である。第２図は第１図に示すCaTiO3−
La2O3.2TiO2−PbO.TiO2三成分に対する
Bi2O3.2TiO2の領域と電気特性の関係を示す図で
ある。第３図は第２図と同様MgTiO3の領域と電
気特性の関係を示す図である。
Figure 1 shows CaTiO 3 - which is the basis of the present invention.
It is a ternary composition diagram showing a region of La 2 O 3 .2TiO 2 −PbO.TiO 2 . Figure 2 shows the CaTiO 3 − shown in Figure 1.
La 2 O 3 .2TiO 2 −PbO.TiO 2 for three components
FIG. 2 is a diagram showing the relationship between the Bi 2 O 3 .2TiO 2 region and electrical properties. FIG. 3 is a diagram showing the relationship between the MgTiO 3 region and electrical characteristics, similar to FIG. 2.
Claims (1)
Bi2O3.2TiO3−MgTiO3系磁器組成物で酸化物に
換算して CaO……6.82〜31.50重量％ La2O3……0.89〜34.76重量％ Bi2O3……1.45〜17.37重量％ TiO2……37.14〜51.69重量％ PbO……4.60〜30.86重量％ MgO……0.16〜3.35重量％の範囲からなる組成物
を主成分とすることを特徴とする温度補償用誘電
体磁器組成物。 ２ CaTiO3−La2O3.2TiO3−PbO.TiO2−
Bi2O3.2TiO3−MgTiO3系磁器組成物で酸化物に
換算して CaO……6.82〜31.50重量％ La2O3……0.89〜34.76重量％ Bi2O3……1.45〜17.37重量％ TiO2……37.14〜51.69重量％ PbO……4.60〜30.86重量％ MgO……0.16〜3.35重量％の範囲からなる主成分
とする組成物に対して、副成分としてMn、及び
希土類元素化合物の１種あるいは１種以上含む事
を特徴とする温度補償用誘電体磁器組成物。[Claims] 1 CaTiO 3 −La 2 O 3 .2TiO 3 −PbO.TiO 2 −
Bi 2 O 3 .2TiO 3 −MgTiO 3 based porcelain composition, calculated as oxide CaO...6.82 to 31.50% by weight La 2 O 3 ...0.89 to 34.76% by weight Bi 2 O 3 ...1.45 to 17.37% by weight % TiO2 ...37.14-51.69% by weight PbO...4.60-30.86% by weight MgO...0.16-3.35% by weight A dielectric ceramic composition for temperature compensation, characterized in that the main component is a composition in the range of 0.16-3.35% by weight. . 2 CaTiO 3 −La 2 O 3 .2TiO 3 −PbO.TiO 2 −
Bi 2 O 3 .2TiO 3 −MgTiO 3 based porcelain composition, calculated as oxide CaO...6.82 to 31.50% by weight La 2 O 3 ...0.89 to 34.76% by weight Bi 2 O 3 ...1.45 to 17.37% by weight % TiO2 ...37.14-51.69% by weight PbO...4.60-30.86% by weight MgO...0.16-3.35% by weight, Mn as a subcomponent and a rare earth element compound A dielectric ceramic composition for temperature compensation, characterized in that it contains one or more kinds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15256979A JPS5676107A (en) | 1979-11-26 | 1979-11-26 | Dielectric porcelain composition for compensating temperature |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15256979A JPS5676107A (en) | 1979-11-26 | 1979-11-26 | Dielectric porcelain composition for compensating temperature |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5676107A JPS5676107A (en) | 1981-06-23 |
| JPS6223405B2 true JPS6223405B2 (en) | 1987-05-22 |
Family
ID=15543337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15256979A Granted JPS5676107A (en) | 1979-11-26 | 1979-11-26 | Dielectric porcelain composition for compensating temperature |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5676107A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0777699B2 (en) * | 1989-10-07 | 1995-08-23 | エミテック・ゲゼルシャフト・フュア・エミッシオンステクノロジー・ミット・ベシュレンクテル・ハフツング | How to assemble shaft |
-
1979
- 1979-11-26 JP JP15256979A patent/JPS5676107A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0777699B2 (en) * | 1989-10-07 | 1995-08-23 | エミテック・ゲゼルシャフト・フュア・エミッシオンステクノロジー・ミット・ベシュレンクテル・ハフツング | How to assemble shaft |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5676107A (en) | 1981-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4889837A (en) | Semiconductive ceramic composition | |
| JPH0118521B2 (en) | ||
| US4820670A (en) | Dielectric ceramic composition | |
| JPS5820133B2 (en) | Porcelain for semiconductor porcelain capacitors and manufacturing method thereof | |
| JPH0118522B2 (en) | ||
| JPS6223405B2 (en) | ||
| JPS6348826B2 (en) | ||
| JPS5815078A (en) | High dielectric constant ceramic dielectric composition | |
| JPH0571538B2 (en) | ||
| JPH05345664A (en) | High dielectric ceramic composition | |
| JP3303453B2 (en) | Dielectric porcelain composition | |
| JP2643197B2 (en) | Dielectric porcelain composition | |
| JPH0361287B2 (en) | ||
| JPS6049151B2 (en) | Method for manufacturing dielectric magnetic composition | |
| JP3333017B2 (en) | Dielectric ceramic composition for temperature compensation | |
| JPS6111404B2 (en) | ||
| JPH03274606A (en) | Dielectric cramic composite | |
| JPH0734415B2 (en) | Grain boundary insulation type semiconductor porcelain composition | |
| KR100262459B1 (en) | Dielectric composition for ceramic capacitor | |
| JPH03285870A (en) | Grain boundary insulation type semiconductor porcelain composition and production thereof | |
| JPS6126207B2 (en) | ||
| JPS6044816B2 (en) | Composition for semiconductor ceramic capacitors | |
| JPS6256102B2 (en) | ||
| JPH08726B2 (en) | High-permittivity porcelain composition for temperature compensation | |
| JPS6364889B2 (en) |