JPH05157284A - Method and device for preventing increase of contacting angle of surface of substrate or base - Google Patents
Method and device for preventing increase of contacting angle of surface of substrate or baseInfo
- Publication number
- JPH05157284A JPH05157284A JP3341802A JP34180291A JPH05157284A JP H05157284 A JPH05157284 A JP H05157284A JP 3341802 A JP3341802 A JP 3341802A JP 34180291 A JP34180291 A JP 34180291A JP H05157284 A JPH05157284 A JP H05157284A
- Authority
- JP
- Japan
- Prior art keywords
- air
- contact angle
- substrate
- increase
- filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000000428 dust Substances 0.000 claims abstract description 23
- 239000010419 fine particle Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 10
- 230000009931 harmful effect Effects 0.000 claims description 24
- 238000001179 sorption measurement Methods 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 231100000614 poison Toxicity 0.000 claims description 3
- 239000003440 toxic substance Substances 0.000 claims description 3
- 230000000266 injurious effect Effects 0.000 abstract 4
- 239000000470 constituent Substances 0.000 abstract 2
- 238000004378 air conditioning Methods 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 239000003570 air Substances 0.000 description 41
- 239000003463 adsorbent Substances 0.000 description 28
- 239000007789 gas Substances 0.000 description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229930195733 hydrocarbon Natural products 0.000 description 9
- 150000002430 hydrocarbons Chemical class 0.000 description 9
- 239000000741 silica gel Substances 0.000 description 9
- 229910002027 silica gel Inorganic materials 0.000 description 9
- 239000004215 Carbon black (E152) Substances 0.000 description 8
- 239000002250 absorbent Substances 0.000 description 8
- 230000002745 absorbent Effects 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 239000002585 base Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000000356 contaminant Substances 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 229910021536 Zeolite Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000012024 dehydrating agents Substances 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000013618 particulate matter Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000010457 zeolite Substances 0.000 description 4
- MPCRDALPQLDDFX-UHFFFAOYSA-L Magnesium perchlorate Chemical compound [Mg+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O MPCRDALPQLDDFX-UHFFFAOYSA-L 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000011265 semifinished product Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000003421 catalytic decomposition reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- -1 that is Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A50/00—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE in human health protection, e.g. against extreme weather
- Y02A50/20—Air quality improvement or preservation, e.g. vehicle emission control or emission reduction by using catalytic converters
Landscapes
- Central Air Conditioning (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基材又は基盤表面の接
触角の増加を防止する方法及び装置に係り、特に半導体
や液晶などの先端産業における原材料、半製品、製品の
基材や基盤表面の接触角の増加防止に関する。 本発明の適用分野の例を以下に示す。 （１）半導体工場におけるウエハの接触角増加防止。 （２）液晶工場におけるガラス基盤の接触角増加防止。 （３）精密機械工場における基盤の接触角増加防止。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for preventing an increase in the contact angle of a substrate or substrate surface, and more particularly to a raw material, a semi-finished product, a substrate or substrate for advanced industries such as semiconductors and liquid crystals. Preventing an increase in the contact angle of the surface. Examples of fields of application of the invention are given below. (1) Prevention of increase in wafer contact angle in semiconductor factories. (2) Prevent increase of contact angle of glass substrate in LCD factory. (3) Prevent increase of the contact angle of the board in the precision machine factory.
【０００２】[0002]
【従来の技術】従来の技術に関して、半導体工業におけ
るクリーンルームの空気清浄を例に説明する。 従来のクリーンルームの空気清浄方法あるいはその装置
を大別すると、 （１）機械的ろ過方法（例えばＨＥＰＡフィルター） （２）静電的に微粒子の捕集を行う高電圧による荷電及
び導電性フィルターによるろ過方式（例えばＨＥＳＡフ
ィルター） があるが、これらの方式は、いずれも微粒子（粒子状物
質）除去を目的としており、炭化水素（Ｈ．Ｃ．）のよ
うな接触角を増加させるようなガス状の汚染物の除去に
は効果がない欠点があった。ガス状の汚染物（有害成
分）であるＨ．Ｃ．の除去法としては、燃焼分解法、触
媒分解法、Ｏ3 分解法などが知られている。しかし、こ
れらの方法はクリーンルームへの導入空気に含有する極
低濃度Ｈ．Ｃ．除去には効果がない。2. Description of the Related Art The prior art will be described by taking air cleaning in a clean room in the semiconductor industry as an example. The air cleaning methods in the conventional clean room or the apparatus therefor are roughly classified into: (1) mechanical filtration method (for example, HEPA filter) (2) filtration by a high voltage charged and conductive filter that electrostatically collects fine particles. Although there are methods (for example, HESA filter), all of these methods aim at removing fine particles (particulate matter), and gas such as hydrocarbon (HC) that increases the contact angle is used. It had the drawback of not being effective in removing contaminants. H.V., which is a gaseous pollutant (hazardous component). C. As a method for removing methane, a combustion decomposition method, a catalytic decomposition method, an O 3 decomposition method and the like are known. However, these methods have an extremely low concentration H.V. contained in the air introduced into the clean room. C. Has no effect on removal.
【０００３】また、Ｈ．Ｃ．以外のガス状有害成分とし
ては、ＳＯｘ、ＮＯｘ、ＨＣｌ、ＮＨ3 などがあり、こ
れらの除去法としては適宜のアルカリ性物質や酸性物質
を用いた中和反応や酸化反応に基づく方法などが知られ
ている。しかし、これらの方法は、成分濃度がクリーン
ルームへの導入空気に含有するような極低濃度の場合に
は効果が少ない。クリーンルームにおいては、自動車排
ガスに起因するような導入空気中の低濃度のＨ．Ｃ．も
汚染質として問題となる。また、クリーンルームにおけ
る作業で生じた各種の溶剤（例えば、アルコール、ケト
ン類等）も汚染質として問題となる。クリーンルームに
おける汚染物（粒子状物質及び接触角を増加させるガス
状有害物質）は、半導体製品の生産性（歩留り）を低下
させる原因、すなわち、ウエハ、半製品、製品の基盤表
面への汚染物の沈着による破損となるため、これらの除
去が必要となってきている。In addition, H.264. C. Other harmful gaseous components include SOx, NOx, HCl, NH 3 and the like. As a method for removing these, a method based on a neutralization reaction or an oxidation reaction using an appropriate alkaline substance or acidic substance is known. ing. However, these methods are less effective when the component concentration is an extremely low concentration such as contained in the air introduced into the clean room. In a clean room, H.O. C. Also poses a problem as a pollutant. Further, various solvents (for example, alcohols, ketones, etc.) generated in the work in the clean room also pose a problem as contaminants. Contaminants in the clean room (particulate matter and gaseous toxic substances that increase the contact angle) reduce the productivity (yield) of semiconductor products, that is, contaminants on wafers, semi-finished products, and substrate surfaces of products. These are required to be removed because they are damaged by deposition.
【０００４】[0004]
【発明が解決しようとする課題】ウエハ、半製品、製品
の基盤が、粒子状物質や接触角を増加させるガス状有害
成分に汚染されると、基盤表面の接触角が増加する。接
触角とは、表面の汚染の程度を示すものであり、表面の
ぬれ性を表わす角度で表現され、接触角が高いと汚染さ
れており、逆に接触角が低いと汚染されていない。すな
わち、半導体製品の生産性向上のためには、接触角の増
加を防止する方法や装置が必要である。そこで、本発明
は、上記した問題点に対応するための、接触角を増加す
る汚染物質を効果的に除去できる接触角の増加防止方法
及びその装置を提供することを課題とする。When a wafer, a semi-finished product, or a substrate of a product is contaminated with particulate matter or a gaseous harmful component that increases the contact angle, the contact angle of the substrate surface increases. The contact angle indicates the degree of contamination of the surface, and is represented by an angle representing the wettability of the surface. When the contact angle is high, it is contaminated, and when the contact angle is low, it is not contaminated. That is, in order to improve the productivity of semiconductor products, a method and apparatus for preventing an increase in contact angle are needed. Therefore, it is an object of the present invention to provide a contact angle increase preventing method and apparatus capable of effectively removing contaminants that increase the contact angle, in order to address the above-mentioned problems.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
に、本発明では、基材又は基盤表面の接触角の増加を防
止する方法において、該基材又は基盤と接触する空気
を、除塵手段、及び吸着及び／又は吸収手段により、該
空気中の微粒子及びガス状の有害物質を除去して、前記
基材又は基盤と接触させることを特徴とする接触角の増
加防止方法としたものである。また、本発明では、基材
又は基盤表面の接触角の増加を防止する装置において、
該基材又は基盤と接触する空気を通す微粒子を除去する
ための除塵装置とガス状有害物質を除去するためのガス
吸着及び／又は吸収除去装置とを備えることとしたもの
である。In order to solve the above problems, in the present invention, in a method for preventing an increase in the contact angle of the surface of a base material or a substrate, the air contacting the base material or the substrate is removed by a dust removing means. And the adsorption and / or absorption means to remove the fine particles in the air and the harmful substances in the gaseous state, and to bring them into contact with the base material or the substrate, thereby preventing an increase in the contact angle. .. Further, in the present invention, in the device for preventing an increase in the contact angle of the substrate or substrate surface,
The apparatus is provided with a dust removing device for removing fine particles that pass through the air in contact with the base material or the substrate and a gas adsorption and / or absorption removal device for removing gaseous toxic substances.
【０００６】次に、本発明を詳細に説明する。本発明に
おいて、微粒子の除塵には除塵フィルタが使用でき、微
粒子を効率良く捕集できるものであればいずれでも良い
が、一般に、ＨＥＰＡフィルタ、ＵＬＰＡフィルタ、静
電フィルタが簡易でかつ効果的であることから好まし
い。通常これらのフィルタの１種類又は複数を適宜に組
合せて用いることができる。また、ガス状の有害物質の
除去には、接触角を増加させるガス状有害成分を吸着及
び／又は吸収できる吸着材又は吸収材を備えたガス除去
装置が使用できる。特に、Ｈ．Ｃ．を吸着、吸収するも
のが良い。このうち、吸着材としては、活性炭、シリカ
ゲル、合成ゼオライト、モレキュラシーブ、高分子化合
物（例、スチレン系重合体、スチレン−ジビニルベンゼ
ン共重合体）がある。このうち、シリカゲル、合成ゼオ
ライト、高分子化合物が性能の面から好ましい。これら
の吸着材の使用においては、被処理空気を脱水して使用
すると、吸着性能が向上し、また寿命が延長できるので
好ましい。Next, the present invention will be described in detail. In the present invention, a dust filter can be used for removing fine particles, and any filter can be used as long as it can efficiently collect fine particles, but generally, a HEPA filter, a ULPA filter, and an electrostatic filter are simple and effective. Therefore, it is preferable. Usually, one or more of these filters can be used in an appropriate combination. Further, for removing the gaseous harmful substance, a gas removing device provided with an adsorbent or an absorbent capable of adsorbing and / or absorbing the gaseous harmful component that increases the contact angle can be used. In particular, H. C. Those that adsorb and absorb are good. Among these, the adsorbents include activated carbon, silica gel, synthetic zeolite, molecular sieves, and high molecular compounds (eg, styrene-based polymers, styrene-divinylbenzene copolymers). Of these, silica gel, synthetic zeolite, and polymer compounds are preferable in terms of performance. In the use of these adsorbents, it is preferable to dehydrate the air to be treated before use, since the adsorption performance is improved and the life can be extended.
【０００７】次に、Ｈ．Ｃ．吸収材（Ｈ．Ｃ．との反応
剤）について説明する。Ｈ．Ｃ．吸収材は、低濃度Ｈ．
Ｃ．と反応し、固定化できるものであれば、何でも使用
できる。一般には、Ｈ2 ＳＯ4 共存でＣｒ6+との反応、
Ｈ2 Ｓ2 Ｏ7 共存でのＩ2 Ｏ5 との反応を用いることが
でき、前者は低分子量のＨ．Ｃ．、後者は高分子量Ｈ．
Ｃ．に有効で適宜に用いることができる。用いる方法と
しては、ガラスビースやアルミナ表面にこれらの試薬剤
を含浸させて反応させることができる。なお、吸収とは
化学反応により反応吸収することを示す。これら吸着材
及び／又は吸収材の使用条件として、空間速度（ＳＶ）
は、１００〜２０，０００（ｈ-1）、好ましくは１００
〜５，０００（ｈ-1）である。吸着材の使用は、本例の
ような使い方の他に、ＰＳＡ（圧力スウィング吸着）、
やＴＳＡ（熱スウィング吸着）により再生を同時に行い
ながら実施することもできる。上記では、接触角を増加
させる主たるガス状有害成分がＨ．Ｃ．の場合を説明し
た。Next, H. C. The absorbent (reactant with HC) will be described. H. C. The absorbent has a low H.
C. Any substance that reacts with and can be immobilized can be used. In general, reaction with Cr 6+ in the coexistence of H 2 SO 4 ,
A reaction with I 2 O 5 in the coexistence of H 2 S 2 O 7 can be used, the former being a low molecular weight H. C. , The latter has a high molecular weight H.V.
C. And can be used appropriately. As a method of use, it is possible to impregnate the surface of glass beads or alumina with these reagent agents and react them. The term "absorption" means that the reaction is absorbed by a chemical reaction. As a usage condition of these adsorbents and / or absorbents, space velocity (SV)
Is 100 to 20,000 (h −1 ), preferably 100
˜5,000 (h −1 ). In addition to the usage as in this example, PSA (pressure swing adsorption),
It is also possible to carry out the regeneration simultaneously with TSA (thermal swing adsorption) or the like. In the above, the main gaseous harmful components that increase the contact angle are H. C. The case was explained.
【０００８】接触角の増加原因は、（１）ＳＯｘ、ＮＯ
ｘ、ＨＣｌ、ＮＨ3のような有害ガス、（２）微粒子、
（３）Ｈ．Ｃ．に大別できるが、本発明者の検討の結
果、通常の空気（通常のクリーンルームにおける環境大
気）中の濃度に対する影響では（１）微粒子、（２）
Ｈ．Ｃ．が大きい。一般に、通常の基材や基盤に対して
はＳＯｘ、ＮＯｘ、ＨＣｌ、ＮＨ3 は、通常の空気中の
濃度レベルでは、接触角の増加に対し影響は少ない。従
って、通常は本例のように除塵とＨ．Ｃ．除去で効果が
ある。しかし、ＳＯｘ、ＮＯｘ、ＨＣｌ、ＮＨ3 の濃度
が高い場合や、基材や基盤が敏感な場合や特殊な場合
（例えば、基材表面に特殊な薄膜を被覆した場合）、通
常では影響しない有害成分や濃度でも影響を受ける場合
がある。例えば、クリーンルーム又はその周辺で、前記
のＳＯｘ、ＮＯｘ、ＨＣｌ、ＮＨ3 のような有害ガスの
発生があり、これら成分の空気中の濃度が高い場合、あ
るいは基材や基盤が特殊な処理をされ敏感な状態で取扱
う場合は、本発明がすでに提案した紫外線及び／又は放
射線を有害ガスに照射して、有害ガスを微粒子化し、該
微粒子を捕集する方法（装置）（特願平３−２２，６８
６号）を適宜に組合せて用いることができる。The causes of increase in contact angle are (1) SOx and NO
x, HCl, harmful gas such as NH 3 , (2) fine particles,
(3) H. C. As a result of the study by the present inventor, the influence on the concentration in normal air (the ambient air in a normal clean room) is (1) fine particles, (2)
H. C. Is big. In general, SOx, NOx, HCl, and NH 3 have little effect on the increase of the contact angle at ordinary concentration levels in air for ordinary substrates and substrates. Therefore, normally, dust removal and H. C. Effective in removal. However, if the concentration of SOx, NOx, HCl, NH 3 is high, or if the base material or substrate is sensitive or special (for example, if the surface of the base material is coated with a special thin film), it does not usually affect the harmful effect. It may also be affected by the composition and concentration. For example, when the harmful gas such as SOx, NOx, HCl, NH 3 is generated in the clean room or its vicinity and the concentration of these components in the air is high, or the base material or the substrate is treated specially. When handling in a sensitive state, a method (apparatus) for irradiating the harmful gas with ultraviolet rays and / or radiation previously proposed by the present invention to make the harmful gas fine particles and collecting the fine particles (Japanese Patent Application No. 3-22). , 68
No. 6) can be used in an appropriate combination.
【０００９】また、このような場合は別の周知の有害ガ
ス除去材例えば活性炭、イオン交換繊維などを適宜組合
せて用いることができる。活性炭は、酸やアルカリなど
を添着したり、適宜の周知の方法により改質したものを
用いることができる。Ｈ．Ｃ．の除去においては、本発
明者がすでに提案した紫外線照射及び／又は放射線照射
によりＨ．Ｃ．を微粒子化して捕集する方法（特願平３
−１０５，０９２号）を併せて用いることができる。In such a case, another well-known harmful gas removing material such as activated carbon or ion exchange fiber can be appropriately combined and used. The activated carbon may be one which is impregnated with an acid or an alkali, or which is modified by an appropriate known method. H. C. In the removal of H. C. A method of collecting fine particles of water (Japanese Patent Application No. 3
No. -105,092) can be used together.
【００１０】[0010]
【実施例】以下、本発明を実施例により具体的に説明す
るが、本発明はこれらの実施例に限定されない。 実施例１ 本発明の基材又は基盤表面の接触角の増加防止方法を、
半導体工場におけるエアーナイフ用の供給空気に適用し
た例を図１に示す。図１において、１はクラス１，００
０のクリーンルームであり、クリーンルーム１ではクリ
ーンルーム内空気２が主に除塵フィルタ３及び接触角を
増加させるガス状有害成分を吸着する吸着材４より成る
接触角の増加を防止する装置５にて処理される。該装置
後の空気６は、除塵され、かつ接触角を増加させるガス
状有害成分が除去された清浄化空気となり、ウエハ洗浄
におけるエアーナイフ装置７へ供給される。次に、本例
の詳細を説明する。本例における接触角を増加させる主
たるガス状有害成分はＨ．Ｃ．である。EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples. Example 1 A method for preventing an increase in the contact angle of a substrate or substrate surface of the present invention,
FIG. 1 shows an example applied to supply air for an air knife in a semiconductor factory. In FIG. 1, 1 is class 100
In the clean room 1, the air 2 in the clean room is treated by the device 5 for preventing the increase of the contact angle, which is mainly composed of the dust filter 3 and the adsorbent 4 which adsorbs the gaseous harmful components for increasing the contact angle. It The air 6 after the apparatus becomes dust-free and cleaning air from which gaseous harmful components that increase the contact angle are removed, and is supplied to an air knife apparatus 7 for wafer cleaning. Next, details of this example will be described. The main gaseous toxic component that increases the contact angle in this example is H.264. C. Is.
【００１１】クリーンルーム１内の空気２は、外気８を
先ず粗フィルタ９や空気調和器１０で処理を行い、次い
で、ＨＥＰＡフィルタ１１により除塵され、クラス１，
０００が保持されているが、外気８中の極低濃度炭化水
素（主に自動車により発生）は、上記粗フィルタ９、空
気調和器１０、ＨＥＰＡフィルタ１１では除去できない
ため、クリーンルーム１内に導入されてしまう。１２は
極低濃度Ｈ．Ｃ．が共存する導入空気である。次に接触
角の増加を防止する装置５について詳しく述べる。微粒
子と極低濃度のＨ．Ｃ．を含むクリーンルーム１内の空
気２は、先ず、除塵フィルタ３にて微粒子が除去され
る。除塵フィルタ３はクラス１，０００のクリーンルー
ムにおける微粒子を効率良く捕集できるものであれば何
れでも良い。本例ではＵＬＰＡフィルタを使用してい
る。As for the air 2 in the clean room 1, the outside air 8 is first treated by the coarse filter 9 and the air conditioner 10, and then the dust is removed by the HEPA filter 11 to obtain Class 1,
000 is retained, but extremely low concentration hydrocarbons (mainly generated by automobiles) in the outside air 8 cannot be removed by the coarse filter 9, the air conditioner 10, and the HEPA filter 11, and therefore are introduced into the clean room 1. Will end up. 12 is an extremely low concentration H. C. Is co-introduced air. Next, the device 5 for preventing the increase of the contact angle will be described in detail. Fine particles and H. C. In the air 2 in the clean room 1 containing the, fine particles are first removed by the dust filter 3. The dust removing filter 3 may be any one as long as it can efficiently collect fine particles in a clean room of class 1,000. In this example, a ULPA filter is used.
【００１２】除塵後の空気は、次いでＨ．Ｃ．吸着材４
にて極低濃度Ｈ．Ｃ．が除去される。 Ｈ．Ｃ．吸着材
４は、大気中極低濃度（ｐｐｂオーダ）のＨ．Ｃ．が吸
着できるものであれば何れでも使用できる。本例では、
シリカゲルを使用している。１３は、脱水剤である。す
なわち、シリカゲルは導入空気中の水分（ＲＨ：４０
％）の吸着により性能低下をきたすので、導入空気中の
水分除去を予め行う。脱水剤は、クリーンルーム中の水
分（ＲＨ：４０％）が効率良く捕集できるものであれば
何れでも良く、一般に、脱水用ゼオライト、過塩素酸マ
グネシウムが好適に使用できる。又、装置によっては、
冷却による脱水を行っても良い。吸着材の使用における
脱水は、水分除去により吸着性が向上し、脱水により吸
着材が長時間にわたり、性能が持続できることから好ま
しい。脱水は、本例のように吸着材の直前で行う他に、
除塵フィルタ３の前方又は、吸着材の適宜の複数の位置
で行うことができる。The dust-removed air is then treated with H. C. Adsorbent 4
Very low concentration H. C. Are removed. H. C. The adsorbent 4 is made of H.O. C. Any one can be used as long as it can adsorb. In this example,
It uses silica gel. 13 is a dehydrating agent. That is, silica gel has a moisture content (RH: 40) in the introduced air.
%), The performance is deteriorated, so that water in the introduced air is removed in advance. Any dehydrating agent may be used as long as it can efficiently collect water (RH: 40%) in the clean room, and generally, dehydrating zeolite and magnesium perchlorate can be preferably used. Also, depending on the device,
Dehydration by cooling may be performed. Dehydration in the use of the adsorbent is preferable because the adsorptivity is improved by removing water and the dehydration allows the adsorbent to maintain its performance for a long time. Dehydration is performed just before the adsorbent as in this example,
It can be performed in front of the dust removal filter 3 or at a plurality of appropriate positions of the adsorbent.
【００１３】本例でのＨ．Ｃ．除去は、吸着材により行
った場合であるが、吸着材の代わりに吸収材（極低濃度
Ｈ．Ｃ．との反応剤）を用いても良い。又吸着材と吸収
材を同時に使用することもできる。また、上述実施例に
おける除塵フィルタ、吸着材及び／又は吸収材、脱水剤
の位置は、何ら限定されるものでない。上述本発明者が
すでに提案した方法（装置）との組合せや有害ガス除去
材の利用は適宜に選択して用いることができる。また、
除塵フィルタや吸着材及び／又は吸収材の使用条件は適
宜に決めることができる。すなわち、これらは利用する
クリーンルームの汚染物（微粒子、Ｈ．Ｃ．、他の有害
ガス）の濃度、種類、適用装置の種類、構造、規模、要
求性能・効率、経済性などで適宜に予備試験を行い決め
ることができる。実施例では、媒体が空気の場合につい
て説明したが、窒素やアルゴンなど他の気体に不純物と
して微粒子やガス状の有害物質が含まれる場合も同様に
実施できることは言うまでもない。In the present example, H.264. C. The removal is performed by using an adsorbent, but an absorbent (reactant with an extremely low concentration HC) may be used instead of the adsorbent. It is also possible to use the adsorbent and the absorbent at the same time. Further, the positions of the dust removing filter, the adsorbent and / or the absorbent, and the dehydrating agent in the above-mentioned embodiments are not limited at all. The combination with the method (apparatus) already proposed by the inventor and the use of the harmful gas removing material can be appropriately selected and used. Also,
The usage conditions of the dust removing filter and the adsorbent and / or the absorbent can be appropriately determined. In other words, these are appropriate preliminary tests depending on the concentration, type, type, structure, scale, required performance / efficiency, economic efficiency, etc. of contaminants (fine particles, HC, other harmful gas) in the clean room to be used. Can be decided. In the embodiments, the case where the medium is air has been described, but it goes without saying that the same can be applied to the case where other gas such as nitrogen or argon contains fine particles or gaseous harmful substances as impurities.
【００１４】実施例２ 図１に示した接触角の増加を防止する装置でクリーンル
ームの空気中の微粒子及びＨ．Ｃ．の除去を行った清浄
化空気にガラス基盤を暴露し、接触角の増加について調
べた。 クリーンルーム ： クラス１０，０００ 除塵フィルタ ： ＵＬＰＡ Ｈ．Ｃ．吸着材 ： シリカゲル 脱 水 剤 ： 過塩素酸マグネシウム Ｈ．Ｃ．吸着材のＳＶ ： １，０００（ｈ-1） 接触角の測定 ： 接触角計 ガラス基盤の前処理 ： 洗剤とアルコールで洗浄後、
Ｏ3 発生下で紫外線照射。Example 2 A device for preventing an increase in contact angle shown in FIG. C. The glass substrate was exposed to the purified air that had been removed, and the increase in contact angle was investigated. Clean room: Class 10,000 dust removal filter: ULPA H. C. Adsorbent: Silica gel Dewatering agent: Magnesium perchlorate H. C. SV of adsorbent: 1,000 (h -1 ) Contact angle measurement: Contact angle meter Pretreatment of glass substrate: After cleaning with detergent and alcohol,
UV irradiation under O 3 generation.
【００１５】結 果 １００時間暴露した接触角（θ、度）を図２に示す。図
２において、本発明のものは−○−で示し、また、比較
として、クリーンルームの空気にそのまま暴露したもの
（−●−）、除塵フィルタのみ通した空気（−□−）、
及びＨ．Ｃ．吸着材のみ通した空気（−■−）に同様に
暴露したものを示す。尚、用いた接触角計の接触角を検
出し得る度数（検出下限の接触角、θ、度）は、３〜４
度であり、本発明の除塵フィルタとシリカゲルを同時に
用いたものは、検出限界（↓）を示す。As a result, the contact angle (θ, degree) exposed for 100 hours is shown in FIG. In Fig. 2, those of the present invention are indicated by-○-, and, for comparison, those exposed directly to the air in the clean room (-●-), air that has passed only the dust removal filter (-□-),
And H .; C. The same exposure was made to the air (-■-) that passed only the adsorbent. Note that the contact angle of the contact angle meter used (the lower limit of the contact angle, θ, degrees) at which the contact angle can be detected is 3 to 4
When the dust filter of the present invention and silica gel are used at the same time, the detection limit (↓) is exhibited.
【００１６】実施例３ 実施例２において、吸着材として合成ゼオライト、高分
子化合物（スチレン系重合体）を用いた場合の１５、４
０時間後の接触角を同様に調べた。 結 果 接触角（θ、度）を表１に示す。Example 3 In Example 2, 15, 4 in the case where a synthetic zeolite or a high molecular compound (styrene polymer) was used as the adsorbent
The contact angle after 0 hours was similarly examined. Table 1 shows the result contact angles (θ, degrees).
【表１】 [Table 1]
【００１７】実施例４ 実施例２において接触角の増加を防止する装置を、酸洗
浄しているクリーンルームで用い、クリーンルーム内空
気に暴露したウエハの接触角と該装置出口の清浄化空気
に暴露したウエハの接触角を比較した。 クリーンルーム ： クラス１，０００ 除塵フィルタ ： ＵＬＰＡ 吸 着 材 ： シリカゲル（Ｈ．Ｃ．吸着材）の前
方にアルカリを添着した活性炭（酸性ガス吸着材） 吸着材のＳＶ ： シリカゲル充填層、活性炭充填層い
ずれも１，０００（ｈ-1) 脱 水 剤 ： 過塩素酸マグネシウム クリーンルームにおける酸処理 ： 硝酸と硫酸を使用 クリーンルームにおいて、クリーンルーム空気をウエハ
に暴露した空気中、ＮＯｘ、ＳＯｘ濃度 ： １０〜５
０ppmExample 4 The apparatus for preventing an increase in contact angle in Example 2 was used in a clean room where acid cleaning was performed, and the wafer was exposed to the contact angle of the wafer exposed to the air in the clean room and the clean air at the outlet of the apparatus. The contact angles of the wafers were compared. Clean room: Class 1,000 dust removal filter: ULPA adsorbent: Activated carbon (acidic gas adsorbent) in which alkali is impregnated in front of silica gel (HC adsorbent) SV of adsorbent: either silica gel packed bed or activated carbon packed bed Also 1,000 (h -1 ) Dehydrating agent: Magnesium perchlorate Acid treatment in clean room: Using nitric acid and sulfuric acid NOx and SOx concentrations in clean room air exposed to wafers in clean room: 10-5
0 ppm
【００１８】結 果 １００時間暴露した接触角（θ、度）を図３に示す。図
３において、本発明の場合は−○−で示し、また、比較
として、吸着材がシリカゲルのみ（Ｈ．Ｃ．除去のみ）
の場合−□−、及びクリーンルームの空気の場合−●−
を示す。Results The contact angle (θ, degree) exposed for 100 hours is shown in FIG. In FIG. 3, the case of the present invention is shown by-○-, and as a comparison, the adsorbent is silica gel only (HC removal only).
-□-and clean room air- ●-
Indicates.
【００１９】[0019]
【発明の効果】本発明によれば以下のような効果を奏す
る。 （１）接触角の増加を防止するにあたり、気体を除塵及
び接触角を増加させるガス状有害成分を吸着及び／又は
吸収したことによって、 気体中微粒子（粒子状物質）及びガス状有害成分が
除去される効果が生じ、微粒子及びガス状有害成分が除
去された清浄気体が得られた。 の清浄化気体を、半導体や液晶などの先端産業に
おける基材や基盤上に暴露しておくと該基材や基盤の表
面汚染が防止でき、その結果該基材や基盤の接触角が増
加しない効果が生じた。The present invention has the following effects. (1) In order to prevent an increase in contact angle, fine particles (particulate matter) in a gas and a gaseous harmful component are removed by removing dust from the gas and adsorbing and / or absorbing a gaseous harmful component that increases the contact angle. As a result, a clean gas free of fine particles and gaseous harmful components was obtained. If the cleaning gas of the above is exposed on the substrate or substrate in the advanced industry such as semiconductors and liquid crystals, the surface contamination of the substrate or substrate can be prevented, and as a result, the contact angle of the substrate or substrate does not increase. The effect occurred.
【００２０】（２）（１）において、接触角を増加させ
るガス有害成分の吸着材及び／又は吸収材、あるいは該
有害成分の適宜の除去法（例、本発明者のすでに提案し
た方法）を適宜に選択し、組合せることによって、 ＨＣ、ＳＯｘ、ＮＯｘ、ＨＣｌ、ＮＨ3 などに対
し、真に接触角を増加させる有害成分（濃度）に対応し
た（現場に対応した）好適な除去を行うことができた。(2) In (1), an adsorbent and / or an adsorbent for harmful gas components for increasing the contact angle, or an appropriate method for removing the harmful components (eg, the method already proposed by the inventor) is used. By appropriately selecting and combining them, HC, SOx, NOx, HCl, NH 3 etc. can be removed appropriately (corresponding to the site) corresponding to the harmful component (concentration) that truly increases the contact angle. I was able to do it.
【図１】本発明方法を用いた装置の概略説明図である。FIG. 1 is a schematic explanatory view of an apparatus using the method of the present invention.
【図２】実施例２の結果である暴露時間と接触角の関係
を示すグラフである。FIG. 2 is a graph showing the relationship between exposure time and contact angle, which are the results of Example 2.
【図３】実施例４の結果である暴露時間と接触角の関係
を示すグラフである。FIG. 3 is a graph showing the relationship between exposure time and contact angle, which are the results of Example 4.
１：クリーンルーム、２：空気、３：除塵フィルタ、
４：吸着材、５：接触角増加防止装置、６：処理空気、
７：エアーナイフ装置、８：外気、９：粗フィルタ、１
０：空気調和器、１１：ＨＥＰＡフィルタ、１２：導入
空気、１３：脱水剤1: Clean room, 2: Air, 3: Dust filter,
4: Adsorbent, 5: Contact angle increase prevention device, 6: Treated air,
7: Air knife device, 8: Outside air, 9: Coarse filter, 1
0: Air conditioner, 11: HEPA filter, 12: Introduced air, 13: Dehydrant
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴木 英友 神奈川県藤沢市本藤沢４丁目２番１号 株 式会社荏原総合研究所内 (72)発明者 坂本 和彦 埼玉県浦和市南元宿２−４−１ ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hidetomo Suzuki 4-2-1 Motofujisawa, Fujisawa City, Kanagawa Prefecture EBARA Research Institute Ltd. (72) Inventor, Kazuhiko Sakamoto 2-4- Minamimotojuku, Urawa City, Saitama Prefecture 1
Claims (2)
する方法において、該基材又は基盤と接触する空気を、
除塵手段、及び吸着及び／又は吸収手段により、該空気
中の微粒子及びガス状の有害物質を除去して、前記基材
又は基盤と接触させることを特徴とする接触角の増加防
止方法。1. A method for preventing an increase in the contact angle of a substrate or substrate surface, wherein air contacting the substrate or substrate is:
A method for preventing an increase in contact angle, which comprises removing fine particles and gaseous harmful substances in the air by a dust removing means and an adsorbing and / or absorbing means and bringing them into contact with the base material or the substrate.
する装置において、該基材又は基盤と接触する空気を通
す微粒子を除去するための除塵装置とガス状有害物質を
除去するためのガス吸着及び／又は吸収除去装置とを備
えたことを特徴とする接触角の増加防止装置。2. A device for preventing an increase in the contact angle of a substrate or a substrate surface, a dust removing device for removing fine particles passing through the air in contact with the substrate or substrate, and a device for removing gaseous toxic substances. A device for preventing an increase in contact angle, comprising a gas adsorption and / or absorption removal device.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3341802A JPH0796939B2 (en) | 1991-12-02 | 1991-12-02 | Method and device for preventing increase in contact angle of substrate or substrate surface |
| US09/620,247 US6340381B1 (en) | 1991-12-02 | 2000-07-20 | Method and apparatus for the preparation of clean gases |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3341802A JPH0796939B2 (en) | 1991-12-02 | 1991-12-02 | Method and device for preventing increase in contact angle of substrate or substrate surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05157284A true JPH05157284A (en) | 1993-06-22 |
| JPH0796939B2 JPH0796939B2 (en) | 1995-10-18 |
Family
ID=18348874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3341802A Expired - Lifetime JPH0796939B2 (en) | 1991-12-02 | 1991-12-02 | Method and device for preventing increase in contact angle of substrate or substrate surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0796939B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6159421A (en) * | 1995-10-17 | 2000-12-12 | Ebara Corporation | Method of cleaning gases |
| JP2018512581A (en) * | 2015-03-12 | 2018-05-17 | プロフタガレン アクチエボラグＰｒｏｖｔａｇａｒｅｎ | Methods for active or passive sampling of particles and gas phase organic and non-organic components in a fluid stream |
-
1991
- 1991-12-02 JP JP3341802A patent/JPH0796939B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6159421A (en) * | 1995-10-17 | 2000-12-12 | Ebara Corporation | Method of cleaning gases |
| JP2018512581A (en) * | 2015-03-12 | 2018-05-17 | プロフタガレン アクチエボラグＰｒｏｖｔａｇａｒｅｎ | Methods for active or passive sampling of particles and gas phase organic and non-organic components in a fluid stream |
| US10605704B2 (en) | 2015-03-12 | 2020-03-31 | Provtagaren Ab | Method for active or passive sampling of particles and gas phase organic and non-organic components in a fluid flow |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0796939B2 (en) | 1995-10-18 |
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