JPH05152263A - One-face polishing method of silicon wafer by both-face polishing machine - Google Patents
One-face polishing method of silicon wafer by both-face polishing machineInfo
- Publication number
- JPH05152263A JPH05152263A JP3309429A JP30942991A JPH05152263A JP H05152263 A JPH05152263 A JP H05152263A JP 3309429 A JP3309429 A JP 3309429A JP 30942991 A JP30942991 A JP 30942991A JP H05152263 A JPH05152263 A JP H05152263A
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafers
- polishing
- face polishing
- silicon wafer
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、高精度で作業性よくシ
リコンウェーハの片面研磨を行い得る両面研磨機による
シリコンウェーハの片面研磨方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single-sided polishing method for a silicon wafer by a double-sided polishing machine capable of polishing one side of a silicon wafer with high accuracy and workability.
【０００２】[0002]
【従来の技術】従来、両面研磨機によるシリコンウェー
ハの片面研磨方法としては、通常、次の様な方法、すな
わちワックス膜による２枚貼合わせ両面研磨方法が採ら
れている。まず、ラッピング処理が施され表面が平坦化
された２枚のシリコンウェーハを平坦化された面同士で
互いに接着し、この一対のシリコンウェーハの互いに外
方に位置した２面に対して同時にポリッシング処理を施
す方法である。この方法では、２枚のシリコンウェーハ
を接着する場合、ワックス等の熱可塑性樹脂を用いるの
が通例である。ポリッシング処理が終了したこの一対の
シリコンウェーハは表面に付着したワックス等の熱可塑
性樹脂が除去されて製品とされる。2. Description of the Related Art Conventionally, as a method for polishing a single side of a silicon wafer by a double side polishing machine, the following method, that is, a method for laminating two wafers with a wax film, has been generally used. First, two silicon wafers whose surfaces have been flattened by lapping are adhered to each other on their flattened surfaces, and polishing treatment is simultaneously performed on the two surfaces of the pair of silicon wafers located on the outer sides. Is a method of applying. In this method, when bonding two silicon wafers, it is customary to use a thermoplastic resin such as wax. The pair of silicon wafers, which have been subjected to the polishing process, are made into a product by removing the thermoplastic resin such as wax attached to the surface thereof.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記の
ワックス膜による２枚貼合わせ両面研磨方法では、接着
にワックス等の熱可塑性樹脂を用いているために該熱可
塑性樹脂の厚みによる弾性変形のむらが生じ、平滑性の
高い平面加工ができないという欠点があった。また、シ
リコンウェーハの接着や剥離が面倒であり作業効率を改
善する必要があった。また、シリコンウェーハからワッ
クスを除去した後の洗浄工程が煩雑である等の問題もあ
った。本発明は、上記の事情に鑑みてなされたもので、
高精度で平滑性の高い平面加工ができ、作業効率を向上
させコストダウンを図ることができる両面研磨機による
シリコンウェーハの片面研磨方法を提供することにあ
る。However, in the above-mentioned two-sided laminating double-side polishing method using a wax film, since a thermoplastic resin such as wax is used for adhesion, uneven elastic deformation due to the thickness of the thermoplastic resin is caused. However, there is a drawback that flat processing with high smoothness cannot be performed. Further, the adhesion and peeling of the silicon wafer are troublesome, and it is necessary to improve work efficiency. There is also a problem that the cleaning process after removing the wax from the silicon wafer is complicated. The present invention has been made in view of the above circumstances,
It is an object of the present invention to provide a single-sided polishing method for a silicon wafer by a double-sided polishing machine, which can perform highly precise and highly flat surface processing, improve work efficiency, and reduce costs.
【０００４】[0004]
【課題を解決するための手段】上記課題を解決するため
に、本発明は次の様な両面研磨機によるシリコンウェー
ハの片面研磨方法を採用した。すなわち、ＴＴＶ２μ
ｍ、ＬＴＶ１μｍ以下にエッチング仕上げされた２枚の
シリコンウェーハのそれぞれの表面を親水処理し、これ
らの表面を互いに密着させて前記シリコンウェーハ同士
を貼り合わせ、次いで、この貼り合わせた一対のシリコ
ンウェーハの外方に位置する両面を研磨し、その後、こ
の貼り合わせたシリコンウェーハを互いに剥離すること
を特徴としている。In order to solve the above-mentioned problems, the present invention employs the following single-side polishing method for a silicon wafer by a double-side polishing machine. That is, TTV2μ
m, LTV The surface of each of the two silicon wafers etched and finished to 1 μm or less is subjected to hydrophilic treatment, the surfaces are brought into close contact with each other to bond the silicon wafers together, and then the pair of bonded silicon wafers are bonded together. It is characterized in that both outer surfaces are polished and then the bonded silicon wafers are separated from each other.
【０００５】[0005]
【作用】本発明の両面研磨機によるシリコンウェーハの
片面研磨方法では、２枚のシリコンウェーハのそれぞれ
の表面を親水処理した後これらの表面を互いに密着させ
る。シリコンウェーハの表面には親水処理することによ
りＯＨ基が形成され、これらのＯＨ基同士が水素結合を
起こすことにより、これらの表面が密着し、この密着強
度は０．５ｋｇ／ｃｍ2にもなる。以上により、ワック
スを用いることなくシリコンウェーハ同士を貼り合わせ
ることが可能になる。In the single-sided polishing method for silicon wafers by the double-sided polishing machine of the present invention, the surfaces of the two silicon wafers are hydrophilically treated and then the surfaces are brought into close contact with each other. Hydrophilic treatment forms OH groups on the surface of the silicon wafer, and these OH groups form hydrogen bonds with each other to bring the surfaces into close contact with each other, and the adhesion strength reaches 0.5 kg / cm 2. .. As described above, it becomes possible to bond silicon wafers to each other without using wax.
【０００６】また、この貼り合わせた一対のシリコンウ
ェーハの外方に位置する両面を研磨し、その後、この貼
り合わせたシリコンウェーハを互いに剥離することによ
り、１回の操作で２枚のシリコンウェーハを片面研磨す
ることが可能になる。Further, by polishing both outer surfaces of the pair of bonded silicon wafers and then peeling the bonded silicon wafers from each other, two silicon wafers can be obtained by one operation. It becomes possible to polish on one side.
【０００７】[0007]
【実施例】以下、本発明の両面研磨機によるシリコンウ
ェーハの片面研磨方法の一実施例について図１を参照し
て説明する。まず、図１（ａ）に示す様に、クラス１の
クリーンルームにおいてＴＴＶ２μｍ、ＬＴＶ１μｍ以
下になる様研削、エッチング仕上げされた２枚のシリコ
ンウェーハ１，２のそれぞれのエッチング面１ａ，２ａ
を親水処理する。親水処理は、アンモニア、過酸化水素
等の溶液にシリコンウェーハ１，２のそれぞれのエッチ
ング面１ａ，２ａを所定時間浸漬することにより行われ
る。上記シリコンウェーハ１，２のそれぞれのエッチン
グ面１ａ，２ａは、親水処理することにより多数のＯＨ
基が形成される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method for polishing a single side of a silicon wafer by a double side polishing machine of the present invention will be described below with reference to FIG. First, as shown in FIG. 1 (a), the etched surfaces 1a and 2a of two silicon wafers 1 and 2 ground and etched so as to be TTV 2 μm and LTV 1 μm or less in a class 1 clean room.
Is subjected to hydrophilic treatment. The hydrophilic treatment is performed by immersing the etching surfaces 1a and 2a of the silicon wafers 1 and 2 in a solution such as ammonia and hydrogen peroxide for a predetermined time. Each of the etched surfaces 1a and 2a of the silicon wafers 1 and 2 is treated with a hydrophilic material to obtain a large number of OH.
A group is formed.
【０００８】次に、図１（ｂ）に示す様に、これらのシ
リコンウェーハ１，２の親水処理されたそれぞれのエッ
チング面１ａ，２ａ同士を密着させる。この時、エッチ
ング面１ａ，２ａに形成されたＯＨ基同士が水素結合を
起こすことにより、これらのエッチング面１ａ，２ａが
強固に密着する。Next, as shown in FIG. 1 (b), the hydrophilic etching surfaces 1a and 2a of the silicon wafers 1 and 2 are brought into close contact with each other. At this time, the OH groups formed on the etching surfaces 1a and 2a cause a hydrogen bond, so that the etching surfaces 1a and 2a firmly adhere to each other.
【０００９】次に、図１（ｃ）に示す様に、この貼り合
わせた１組のシリコンウェーハ１，２を両面研磨機のキ
ャリア１１のウェーハ装着孔１２に挿入し固定する。次
に、図１（ｄ）に示す様に、該キャリア１１を研磨布１
３が接着された定盤１４上に載置し、研磨布１５が接着
されたもう１つの定盤１６を前記定盤１４に対向させ、
これらの定盤１４，１６によりシリコンウェーハ１，２
を挟圧する。次に、前記研磨布１３，１５に液状の研磨
剤を連続供給しつつ定盤１４，１６を回転させてこれら
のシリコンウェーハ１，２のエッチングされていない面
１ｂ，２ｂを研磨する。Next, as shown in FIG. 1C, the set of bonded silicon wafers 1 and 2 is inserted and fixed in the wafer mounting hole 12 of the carrier 11 of the double-side polishing machine. Next, as shown in FIG. 1D, the carrier 11 is attached to the polishing cloth 1.
3 is placed on a surface plate 14 to which is adhered, and another surface plate 16 to which a polishing cloth 15 is adhered is opposed to the surface plate 14;
With these surface plates 14 and 16, silicon wafers 1 and 2
Pinch. Next, while the liquid polishing agent is continuously supplied to the polishing cloths 13 and 15, the surface plates 14 and 16 are rotated to polish the unetched surfaces 1b and 2b of the silicon wafers 1 and 2.
【００１０】研磨が終了したシリコンウェーハ１，２を
ウェーハ装着孔１２から外し、密着しているシリコンウ
ェーハ１，２を互いに剥離し、これらのシリコンウェー
ハ１，２を個々に洗浄し製品とする。以上により、高精
度で作業性よくシリコンウェーハ１，２の片面研磨を行
うことができる。The silicon wafers 1 and 2 which have been polished are removed from the wafer mounting holes 12 and the adhered silicon wafers 1 and 2 are separated from each other, and these silicon wafers 1 and 2 are individually washed to obtain products. As described above, the single-side polishing of the silicon wafers 1 and 2 can be performed with high accuracy and workability.
【００１１】以上説明した様に、上記一実施例の両面研
磨機によるシリコンウェーハの片面研磨方法によれば、
シリコンウェーハ１，２のそれぞれのエッチング面１
ａ，２ａを親水処理し、これらの親水処理したエッチン
グ面１ａ，２ａを密着することとしたので、ワックスを
用いることなくシリコンウェーハ同士を強固に貼り合わ
せることができ、高精度で平滑性の高い平面加工をする
ことができる。As described above, according to the single-side polishing method for a silicon wafer by the double-side polishing machine of the above-mentioned embodiment,
Etching surface 1 of each of silicon wafers 1 and 2
Since a and 2a are hydrophilically treated and the etched surfaces 1a and 2a that have been hydrophilically treated are brought into close contact with each other, silicon wafers can be firmly bonded to each other without using wax, and high precision and high smoothness can be obtained. Can be processed flat.
【００１２】また、この貼り合わせた１組のシリコンウ
ェーハ１，２のエッチングされていない面１ｂ，２ｂを
研磨し、その後、これらのシリコンウェーハ１，２を互
いに剥離することとしたので、１回の操作で２枚のシリ
コンウェーハを片面研磨することができる。以上によ
り、高精度で作業性がよく、かつコストダウンを図るこ
とができるシリコンウェーハ１，２の片面研磨方法を提
供することができる。Further, the unetched surfaces 1b and 2b of the bonded pair of silicon wafers 1 and 2 are polished, and then the silicon wafers 1 and 2 are separated from each other. It is possible to polish one surface of two silicon wafers by the operation of. As described above, it is possible to provide a single-sided polishing method for the silicon wafers 1 and 2 which is highly accurate, has good workability, and can reduce the cost.
【００１３】[0013]
【発明の効果】以上説明した様に、本発明の両面研磨機
によるシリコンウェーハの片面研磨方法によれば、２枚
のシリコンウェーハのそれぞれの表面を親水処理し、こ
れらの表面を互いに密着させて前記シリコンウェーハ同
士を貼り合わせることとしたので、ワックスを用いるこ
となくシリコンウェーハ同士を貼り合わせることがで
き、高精度で平滑性の高い平面加工をすることができ
る。As described above, according to the single-sided polishing method for a silicon wafer by the double-sided polishing machine of the present invention, the surfaces of two silicon wafers are hydrophilically treated and the surfaces are brought into close contact with each other. Since the silicon wafers are bonded to each other, the silicon wafers can be bonded to each other without using a wax, and it is possible to perform planar processing with high accuracy and high smoothness.
【００１４】また、この貼り合わせた一対のシリコンウ
ェーハの外方に位置する両面を研磨し、その後、この貼
り合わせたシリコンウェーハを互いに剥離することとし
たので、１回の操作で２枚のシリコンウェーハを片面研
磨することが可能になる。以上により、高精度で作業性
がよく、かつコストダウンを図ることができる両面研磨
機によるシリコンウェーハの片面研磨方法を提供するこ
とができる。Further, since the both outer surfaces of the pair of bonded silicon wafers are polished and then the bonded silicon wafers are separated from each other, two silicon wafers can be obtained by one operation. The wafer can be polished on one side. As described above, it is possible to provide a single-sided polishing method for a silicon wafer using a double-sided polishing machine, which is highly accurate, has good workability, and can reduce costs.
【図１】本発明の両面研磨機によるシリコンウェーハの
片面研磨方法の一実施例を示す過程図である。FIG. 1 is a process chart showing an embodiment of a method for polishing a single side of a silicon wafer by a double side polishing machine of the present invention.
１，２ シリコンウェーハ １ａ，２ａ エッチング面 １ｂ，２ｂ エッチングされていない面 １１ キャリア １２ ウェーハ装着孔 １３，１５ 研磨布 １４，１６ 定盤 1, 2 Silicon wafer 1a, 2a Etched surface 1b, 2b Unetched surface 11 Carrier 12 Wafer mounting hole 13,15 Polishing cloth 14,16 Surface plate
Claims (1)
面を親水処理し、これらの表面を互いに密着させて前記
シリコンウェーハ同士を貼り合わせ、次いで、この貼り
合わせた一対のシリコンウェーハの外方に位置する両面
を研磨し、その後、この貼り合わせたシリコンウェーハ
を互いに剥離することを特徴とする両面研磨機によるシ
リコンウェーハの片面研磨方法。1. The surface of each of two silicon wafers is subjected to a hydrophilic treatment, the surfaces are brought into close contact with each other to bond the silicon wafers to each other, and then the silicon wafers are positioned outside the pair of bonded silicon wafers. A single-sided polishing method for a silicon wafer using a double-sided polishing machine, which comprises polishing both surfaces to be polished, and then peeling the bonded silicon wafers from each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3309429A JPH05152263A (en) | 1991-11-25 | 1991-11-25 | One-face polishing method of silicon wafer by both-face polishing machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3309429A JPH05152263A (en) | 1991-11-25 | 1991-11-25 | One-face polishing method of silicon wafer by both-face polishing machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05152263A true JPH05152263A (en) | 1993-06-18 |
Family
ID=17992902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3309429A Pending JPH05152263A (en) | 1991-11-25 | 1991-11-25 | One-face polishing method of silicon wafer by both-face polishing machine |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05152263A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002359215A (en) * | 1993-09-21 | 2002-12-13 | Toshiba Corp | Polishing machine and method |
| JP2003220556A (en) * | 1993-09-21 | 2003-08-05 | Toshiba Corp | Polishing apparatus and method |
| JP2004312036A (en) * | 1993-09-21 | 2004-11-04 | Toshiba Corp | Device and method of polishing |
| JP2018133371A (en) * | 2017-02-13 | 2018-08-23 | 株式会社ディスコ | Wafer processing method |
| JP2018133370A (en) * | 2017-02-13 | 2018-08-23 | 株式会社ディスコ | Wafer processing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6051700A (en) * | 1983-08-31 | 1985-03-23 | Toshiba Corp | Bonding method of silicon crystalline body |
| JPS60121715A (en) * | 1983-12-06 | 1985-06-29 | Toshiba Corp | Bonding method for semiconductor wafer |
| JPS62264864A (en) * | 1986-05-10 | 1987-11-17 | Sony Corp | Lapping method for substrate |
| JPS6356936A (en) * | 1986-08-27 | 1988-03-11 | Nec Corp | Manufacture of semiconductor device |
-
1991
- 1991-11-25 JP JP3309429A patent/JPH05152263A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6051700A (en) * | 1983-08-31 | 1985-03-23 | Toshiba Corp | Bonding method of silicon crystalline body |
| JPS60121715A (en) * | 1983-12-06 | 1985-06-29 | Toshiba Corp | Bonding method for semiconductor wafer |
| JPS62264864A (en) * | 1986-05-10 | 1987-11-17 | Sony Corp | Lapping method for substrate |
| JPS6356936A (en) * | 1986-08-27 | 1988-03-11 | Nec Corp | Manufacture of semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002359215A (en) * | 1993-09-21 | 2002-12-13 | Toshiba Corp | Polishing machine and method |
| JP2003220556A (en) * | 1993-09-21 | 2003-08-05 | Toshiba Corp | Polishing apparatus and method |
| JP2004312036A (en) * | 1993-09-21 | 2004-11-04 | Toshiba Corp | Device and method of polishing |
| JP2018133371A (en) * | 2017-02-13 | 2018-08-23 | 株式会社ディスコ | Wafer processing method |
| JP2018133370A (en) * | 2017-02-13 | 2018-08-23 | 株式会社ディスコ | Wafer processing method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19980623 |