JPH05150445A - Mask for exposure - Google Patents

Mask for exposure

Info

Publication number
JPH05150445A
JPH05150445A JP31612691A JP31612691A JPH05150445A JP H05150445 A JPH05150445 A JP H05150445A JP 31612691 A JP31612691 A JP 31612691A JP 31612691 A JP31612691 A JP 31612691A JP H05150445 A JPH05150445 A JP H05150445A
Authority
JP
Japan
Prior art keywords
mask
exposure
holding member
pattern
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31612691A
Other languages
Japanese (ja)
Inventor
Akira Imai
彰 今井
Shinji Okazaki
信次 岡崎
Hiroshi Fukuda
宏 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP31612691A priority Critical patent/JPH05150445A/en
Publication of JPH05150445A publication Critical patent/JPH05150445A/en
Pending legal-status Critical Current

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  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To provide a mask which is not influenced by a variation of environmental atmospheric pressure of application, etc., and does not generate abnormality of a pattern transfer due to sticking of foreign matters, etc. CONSTITUTION:In the mask for exposure which has a substrate 1 having a pattern 4 to transfer a desired mask pattern and a holding member 3 with which a thin translucent film 2 of desired thickness is set at a specified space from a pattern of the substrate 1, >= 1 opening port 5 is provided on the holding member 3. The mask by which the abnormality of pattern transfer doe not occur due to sticking of the foreign matters, etc., is obtained and the yield of a manufacturing process of a solid element is increased and the productivity is improved. Also a service life of the mask is prolonged.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、露光用マスク、更に詳
しくいえば、半導体素子、超伝導体素子、磁性体素子、
光集積回路素子等の各種固体素子の製造における微細パ
タン形成等に用いられる露光用マスクの構造に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure mask, more specifically, a semiconductor element, a superconductor element, a magnetic element,
The present invention relates to the structure of an exposure mask used for forming fine patterns in the production of various solid-state elements such as optical integrated circuit elements.

【０００２】[0002]

【従来の技術】従来、大規模集積回路等の固体素子にお
ける微細パタンの形成には縮小投影露光法が広く用いら
れてきた。上記縮小投影露光法では、透明な基板、例え
ばガラス基板上にクロムやモリブデンシリサイド等の不
透明な材質でマスクパタンが形成された透過型マスクを
用いて、マスクパタンを転写する。上記透過型マスクで
は、マスクの透明な領域にごみ等の異物が付着した場
合、これがマスクパタンと共にマスクパタンを転写する
基板上に投影されてしまうために、転写パタンの欠陥と
なってしまう。2. Description of the Related Art Conventionally, a reduction projection exposure method has been widely used for forming a fine pattern in a solid state element such as a large scale integrated circuit. In the reduction projection exposure method, the mask pattern is transferred using a transparent mask in which a mask pattern is formed on a transparent substrate such as a glass substrate with an opaque material such as chromium or molybdenum silicide. In the transmissive mask, when foreign matter such as dust adheres to the transparent region of the mask, it is projected together with the mask pattern onto the substrate on which the mask pattern is transferred, which causes a defect in the transfer pattern.

【０００３】従来、上記異物のマスクへの付着を防止す
るために露光マスク用妨塵カバー体をマスク基板上に設
けていた。これは、例えば基板上のマスクパタンから１
〜１２５ｍｍ程度の間隔で設けられた位置に約０．２μ
ｍ〜６μｍの厚さの露光光に対してほぼ透明な薄膜（ペ
リクル膜）によりマスクパタンをカバーするものであ
る。実際には、上記薄膜はこれを保持する保持部材（ス
ペーサ）により基板に接着され、かつ、マスクパタンを
隙間なく完全に覆うものである。上記透明な薄膜の材料
としては、例えばニトロセルロース、エチルセルロース
等のセルロース誘導体等のポリマー材料などが用いられ
る。Conventionally, a dust mask cover for an exposure mask is provided on a mask substrate in order to prevent the above foreign matter from adhering to the mask. This is, for example, 1 from the mask pattern on the substrate.
Approximately 0.2μ at the positions provided at intervals of ~ 125mm
The mask pattern is covered with a thin film (pellicle film) that is substantially transparent to exposure light having a thickness of m to 6 μm. In practice, the thin film is adhered to the substrate by a holding member (spacer) that holds the thin film, and completely covers the mask pattern without any gaps. As the material of the transparent thin film, for example, a polymer material such as a cellulose derivative such as nitrocellulose or ethyl cellulose is used.

【０００４】上記技術によれば、異物は上記薄膜上にし
か付着せず、マスクパタンを投影する際にマスク上に形
成されたマスクパタンに焦点を合わせることにより、上
記薄膜上に付着した異物は焦点はずれとなり、基板上に
結像されなくなる。従って、上記異物の像は基板上に転
写されなくなる。また、防塵カバー体はマスクパタンが
形成されているマスク面だけではなく、これと反対側の
面（マスク裏面）にも設ける場合もある。これは、マス
クパタン面と同様に、マスク裏面に付着した異物等が基
板上に転写されてしまうことを防止するためである。以
上の技術については例えば特許公告公報の特公昭５４ー
２８７１６号、特公昭５８ー１９６５０１、特公昭６３
ー２２５７６号等において述べられている。According to the above technique, the foreign matter adheres only to the thin film, and when the mask pattern is projected, the foreign matter adhered to the thin film is focused by focusing on the mask pattern formed on the mask. The focal point is out of focus and no image is formed on the substrate. Therefore, the image of the foreign matter is not transferred onto the substrate. The dustproof cover may be provided not only on the mask surface on which the mask pattern is formed, but also on the opposite surface (mask back surface). This is to prevent foreign matters or the like attached to the back surface of the mask from being transferred onto the substrate, as in the case of the mask pattern surface. Regarding the above technology, for example, Japanese Patent Publication No. 54-28716, Japanese Patent Publication No. 58-196501, and Japanese Patent Publication No. 63
-22576 etc.

【０００５】[0005]

【発明が解決しようとする課題】上記従来技術は、ペリ
クル膜及びこれを保持する保持部材によりマスクパタン
面のマスクパタンを完全に覆うものである。一方、Ｘ線
露光装置などでは、露光光の減衰等を防止するために光
学系を真空容器内に配置することがある。この場合、通
常、マスクも真空容器内に設置されることになる。この
ため、例えば防塵カバー体を設けたマスクを真空容器内
に設置して真空引きを行なうと、ペリクル膜で覆った空
間と雰囲気とで真空度の差が生じるために、ペリクル膜
は容易に破れてしまい本来の防塵カバー体としての機能
を有しなくなってしまうという問題があった。従って本
発明の主な目的は、真空中や、不活性ガス等の雰囲気中
で機械的に安定に機能を果たし、寿命の長い露光用マス
クを実現することである。The above prior art is to completely cover the mask pattern on the mask pattern surface with the pellicle film and the holding member holding the pellicle film. On the other hand, in an X-ray exposure apparatus or the like, an optical system may be arranged in a vacuum container in order to prevent attenuation of exposure light. In this case, the mask is usually also installed in the vacuum container. Therefore, for example, when a mask provided with a dustproof cover is placed in a vacuum container and vacuum is applied, a difference in degree of vacuum occurs between the space covered with the pellicle film and the atmosphere, and the pellicle film is easily broken. However, there is a problem that the original function as a dustproof cover is lost. Therefore, a main object of the present invention is to realize an exposure mask that has a long life and mechanically stable functions in vacuum or in an atmosphere of an inert gas or the like.

【０００６】[0006]

【課題を解決するための手段】上記目的を達成するた
め、本発明の露光用マスクは、ペリクル膜を支持する保
持部材（スペーサ）に大気、窒素、ヘリウム等の気体が
通過しうる開口部を設けた。さらに好ましい実施形態と
して、上記開口部に異物等の通過を防止し、かつ上記気
体が通過しうるフィルタ材を設けて構成した。また、上
記開口部の寸法を上記露光用マスクを用いる露光装置の
解像限界寸法のマスク上換算寸法以下とすること、上記
フィルタ材は所定の寸法以上の粒子の通過を妨止するも
のを用いることが望ましい。In order to achieve the above object, the exposure mask of the present invention has a holding member (spacer) for supporting a pellicle film with an opening through which a gas such as atmosphere, nitrogen or helium can pass. Provided. As a further preferred embodiment, the opening is provided with a filter material that prevents foreign matters and the like from passing therethrough and allows the gas to pass therethrough. Further, the size of the opening is set to be equal to or smaller than the on-mask converted size of the resolution limit size of the exposure apparatus using the exposure mask, and the filter material is used to prevent passage of particles having a predetermined size or more. Is desirable.

【０００７】[0007]

【作用】上述のように、本発明は、露光光に対して実質
的に透明な薄膜(ペリクル膜）と、これを保持する壁状
の保持部材（スペーサ）とよりフォトマスク用妨塵カバ
ー体が構成されて、マスクパタンの全域を覆う。更に、
妨塵カバー体内外が、異物等が侵入すること無く、気体
の出入りができるように構成されている。一般に、Ｘ線
露光装置などでは、露光光の減衰等を防止するために光
学系やマスクを真空容器内に配置することがある。ま
た、マスクの性能を維持するためには、真空容器内や、
他の物質と化学反応を起こしにくく安定な、窒素ガスあ
るいはヘリウム等の不活性ガス等の雰囲気中でマスクを
保管することが好ましい。このような場合、防塵カバー
体を設けたマスクを真空容器内に配置して真空引きを行
なったり、雰囲気を窒素ガスやヘリウムガス等に置換す
る必要がある。特に、真空引きを行なう場合には、真空
引きの際にペリクル膜とマスク及び保持部材で覆われた
空間と真空容器内とで圧力差が生じるため機械的強度が
一番弱い薄膜（ペリクル膜）が破れてしまう。マスク基
板に開口部を設けることはマスク精度や加工技術の面か
ら好ましくない。又、上記ペリクル膜に気体が通過しう
る開口部を設けることは、薄膜の機械的強度や薄膜の均
一性を保つことを考えると非常に困難である。As described above, the present invention comprises a dust mask cover body for a photomask, which comprises a thin film (pellicle film) substantially transparent to exposure light and a wall-shaped holding member (spacer) for holding the thin film. To cover the entire mask pattern. Furthermore,
The dustproof cover is configured so that gas can flow in and out of the inside and outside of the dustproof cover without the intrusion of foreign matter or the like. Generally, in an X-ray exposure apparatus or the like, an optical system and a mask may be arranged in a vacuum container in order to prevent attenuation of exposure light. Also, in order to maintain the performance of the mask, in the vacuum container,
It is preferable to store the mask in an atmosphere of nitrogen gas or an inert gas such as helium, which is stable and unlikely to chemically react with other substances. In such a case, it is necessary to place a mask provided with a dustproof cover inside a vacuum container to evacuate or replace the atmosphere with nitrogen gas or helium gas. In particular, when vacuuming is performed, a thin film (pellicle film) having the weakest mechanical strength (pellicle film) because a pressure difference occurs between the pellicle film, the space covered by the mask and the holding member, and the inside of the vacuum container during vacuuming. Will be torn. Providing an opening in the mask substrate is not preferable in terms of mask accuracy and processing technology. In addition, it is very difficult to provide an opening through which a gas can pass in the pellicle film, considering the mechanical strength of the thin film and the uniformity of the thin film.

【０００８】本発明の露光用マスクは、ペリクル膜を保
持する保持部材に気体が通過しうる開口部を設けること
によって、この開口部を通過してペリクル膜、保持部材
及びマスク基板とで覆われた空間と露光マスク使用雰囲
気との間の気体の流通を行うようにした。上記薄膜を保
持する保持部材はアルミ等の機械的強度の比較的高い材
料により構成されている。これによってマスク精度や加
工技術の面の問題や、薄膜の機械的強度や薄膜の均一性
の問題を生じること無く、種々の露光用マスク使用環境
で、機械的に安定に露光用マスクの機能を実行すること
ができる。In the exposure mask of the present invention, the holding member holding the pellicle film is provided with an opening through which gas can pass, and the opening is covered with the pellicle film, the holding member and the mask substrate. The gas is allowed to flow between the open space and the atmosphere in which the exposure mask is used. The holding member for holding the thin film is made of a material having a relatively high mechanical strength such as aluminum. As a result, the function of the exposure mask can be mechanically stable in various exposure mask use environments without causing problems in terms of mask accuracy and processing technology, or problems of mechanical strength of the thin film and uniformity of the thin film. Can be executed.

【０００９】[0009]

【実施例】以下本発明の実施例を図面を用いて説明す
る。図１は、本発明による露光用マスクの１実施例の構
成を示す斜視図である。本実施例は反射型露光用マスク
であり、基板（マスク）１は、所定の露光光に対して反
射率の高い領域及び反射率の低い領域を有するマスクパ
タンが形成されている。転写用のマスクパタンが形成さ
れたマスク面４を有する基板１の上に露光光に対してほ
ぼ透明な薄膜（ペリクル膜）２が壁状の保持部材３によ
ってマスク面４から一定の間隔をおいて設けられてい
る。上記壁状の保持部材３に開口部５が設けられてい
る。開口部５にはフィルタ材６が設けられている。気体
は開口部５を介してペリクル膜２と保持部材３で構成さ
れる防塵カバー体の内外に通過できる。従って、真空引
きや真空を破る場合において、ペリクル膜２が破れるこ
とを防止できる。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view showing the configuration of an embodiment of an exposure mask according to the present invention. This embodiment is a reflective exposure mask, and a substrate (mask) 1 is formed with a mask pattern having a region having a high reflectance and a region having a low reflectance with respect to predetermined exposure light. A thin film (pellicle film) 2 which is substantially transparent to exposure light is provided on a substrate 1 having a mask surface 4 on which a transfer mask pattern is formed, with a wall-shaped holding member 3 keeping a constant distance from the mask surface 4. It is provided. An opening 5 is provided in the wall-shaped holding member 3. A filter material 6 is provided in the opening 5. The gas can pass through the opening 5 into and out of the dustproof cover body composed of the pellicle film 2 and the holding member 3. Therefore, it is possible to prevent the pellicle film 2 from being broken when vacuuming or breaking the vacuum.

【００１０】開口部５を設けることにより、防塵カバー
体とマスク面４で覆われた空間に窒素あるいはヘリウム
等の気体を充填することも可能になる。すなわち、通常
の露光操作時には真空中に設置されるが、露光装置から
取り出して大気圧中でマスクを保管する場合、真空リー
ク時にたとえばヘリウムガスを開口部から充填して、さ
らに、大気圧になった後に開口部５に蓋を閉じる。これ
により、露光用マスクは大気にさらされている場合より
も安定な状態に保つことができ、マスクの寿命を延ばす
ことができる。また、開口部を２つ設けて、一つの穴か
ら例えばヘリウムガスを注入し、他の開口部から気体を
放出する様にすれば、マスクパタンが直接接する気体を
ヘリウムガスに置換することも容易になる。さらに、気
体をヘリウムガスに置換した後に開口部に蓋をする等し
て気体が通過できないようにしてやれば、マスクを安定
に保つことができ、従ってマスクの寿命を延ばすことが
できる。By providing the opening 5, it becomes possible to fill the space covered with the dustproof cover and the mask surface 4 with a gas such as nitrogen or helium. That is, it is installed in a vacuum during a normal exposure operation, but when the mask is taken out from the exposure apparatus and stored at atmospheric pressure, for example, helium gas is filled from the opening at the time of a vacuum leak, and the atmospheric pressure is further increased. After that, the lid is closed on the opening 5. As a result, the exposure mask can be kept in a more stable state than when it is exposed to the atmosphere, and the life of the mask can be extended. Also, if two openings are provided and, for example, helium gas is injected from one hole and gas is released from the other opening, it is easy to replace the gas in direct contact with the mask pattern with helium gas. become. Furthermore, by replacing the gas with helium gas and then by covering the opening with a gas to prevent the gas from passing therethrough, the mask can be kept stable and therefore the life of the mask can be extended.

【００１１】開口部５にフィルタ６を設けない場合、開
口部５の大きさよりも小さな異物がマスク面に侵入して
付着する恐れがある。そこで、開口部の大きさを、この
開口部を通過した異物等がマスク面に付着しても転写パ
タンに欠陥を生じさせないような寸法以下にすることが
必要である。例えば、このマスクを用いる露光装置の解
像限界寸法のマスク上換算寸法以下の開口部寸法とすれ
ば良い。例えば、縮小比５：１、レンズの開口数０．５
２のｉ線縮小投影露光装置を用いて最小寸法０．４μｍ
のパタンを転写する場合には、転写パタンに欠陥を生じ
させないような異物の大きさは、マスクパタン最小寸法
の１０％である０．２μｍ程度以下であることが好まし
い。If the filter 6 is not provided in the opening 5, foreign matter smaller than the size of the opening 5 may enter and adhere to the mask surface. Therefore, it is necessary to make the size of the opening equal to or smaller than a size that does not cause a defect in the transfer pattern even if foreign matter or the like that has passed through the opening adheres to the mask surface. For example, the opening size may be equal to or smaller than the mask conversion size of the resolution limit size of the exposure apparatus using this mask. For example, reduction ratio 5: 1, lens numerical aperture 0.5
Minimum size 0.4 μm using i-line reduction projection exposure system
When transferring the pattern, it is preferable that the size of the foreign matter that does not cause a defect in the transfer pattern is about 0.2 μm or less, which is 10% of the minimum size of the mask pattern.

【００１２】しかしながら、上述のような微細な寸法の
開口部を十分な気体通過量が得られる程度の個数設ける
ことは困難である。そこで、図１の実施例では、異物の
大きさよりも比較的大きな開口部を一つ以上設け、この
開口部を覆うようにして異物寸法より小さな寸法の開口
部を有するフィルタ材６を設けている。これにより、防
塵カバー体の製造は容易になる。さらに、長期の使用に
よりフィルタ材６が汚れてきてもこれを交換することに
より容易にマスクの寿命を延ばすことも可能である。[0012] However, it is difficult to provide the above-mentioned openings having the fine dimensions such that a sufficient gas passage amount can be obtained. Therefore, in the embodiment of FIG. 1, one or more openings that are relatively larger than the size of the foreign matter are provided, and the filter material 6 that covers the openings and has an opening that is smaller than the dimension of the foreign matter is provided. .. This facilitates the manufacture of the dustproof cover body. Further, even if the filter material 6 becomes dirty due to long-term use, it is possible to easily extend the life of the mask by replacing it.

【００１３】なお、上述の保持部材３に設ける開口部５
の寸法やフィルタ材６の開口部寸法は、マスクパタンの
寸法、このマスクを用いる露光装置の性能、マスクを使
用したり保管したりする場所の環境等によって最も適し
たものに設定する。さらに開口部の個数、開口部を設け
る位置等についても、装置や取扱い環境、方法等によっ
て適当な条件を用いれば良い。保持部材３の大きさは上
記マスクパタン領域を完全に覆い、かつ、マスクパタン
転写時に保持部材３がマスクパタンに対して露光光（照
明光）の影とならないような寸法であればよい。ペリク
ル膜とマスクパタンとの間隔を決定する保持部材３の高
さは、使用環境において予測される付着物の粒子寸法や
投影光学系の露光波長、開口数に基づいて、付着物がパ
タン転写時に影響を与えないように設定される。保持部
材３の形状や厚さは、機械的強度が得られ均一に露光光
に対してほぼ透明な膜（ペリクル膜）２を保持できるも
のであれば良く、材質もアルミに限るものではない。The opening 5 provided in the holding member 3 described above.
And the size of the opening of the filter material 6 are set to be most suitable depending on the size of the mask pattern, the performance of the exposure apparatus using this mask, the environment of the place where the mask is used and stored, and the like. Further, with respect to the number of openings, the positions at which the openings are provided, etc., appropriate conditions may be used depending on the apparatus, the handling environment, the method, etc. The size of the holding member 3 may be such that it completely covers the mask pattern area and that the holding member 3 does not become a shadow of the exposure light (illumination light) on the mask pattern when the mask pattern is transferred. The height of the holding member 3 that determines the distance between the pellicle film and the mask pattern is determined based on the particle size of the adhered matter, the exposure wavelength of the projection optical system, and the numerical aperture that are predicted in the use environment. It is set to have no effect. The shape and the thickness of the holding member 3 are not limited to aluminum, as long as the holding member 3 has mechanical strength and can hold the film (pellicle film) 2 that is substantially transparent to the exposure light.

【００１４】図２は、本発明による露光用マスクの他の
実施例の構成を示す斜視図である。本実施例は透過照明
で用いる透過型露光用マスクに好適な構成を示す。図１
の実施例と同じ防塵カバー体をマスクパタン面４だけで
はなく、これと反対側のマスク面に設けている。これ
は、マスクパタン面と同様にマスク裏面に付着した異物
等が基板上に転写されてしまうことを防止するためであ
る。反射照明で用いる反射型露光用マスクの場合は、マ
スクパタン面側のみに防塵カバー体を設ければよい。な
お、同図において、図１の構成分部と同一の機能部につ
いては同一の番号を付している（以下の図面についても
同様である）。FIG. 2 is a perspective view showing the structure of another embodiment of the exposure mask according to the present invention. This embodiment shows a configuration suitable for a transmissive exposure mask used in transillumination. Figure 1
The same dustproof cover as that of the above embodiment is provided not only on the mask pattern surface 4 but also on the opposite mask surface. This is to prevent foreign matters or the like attached to the back surface of the mask from being transferred onto the substrate as in the case of the mask pattern surface. In the case of a reflective exposure mask used for reflective illumination, a dustproof cover may be provided only on the mask pattern surface side. In the figure, the same functional parts as the constituent parts in FIG. 1 are designated by the same reference numerals (the same applies to the following drawings).

【００１５】図３は、本発明による露光用マスクの更に
他の実施例の構成を示す斜視図である。図面は保持部材
３の構造を見やすくするため、ペリクル膜２を除いた状
態で示している。本実施例は、マスクパタン領域が大き
な場合に、ペリクル膜２の薄膜強度を補強したものであ
る。図に示したように上述の保持部材３に加えて補強用
薄膜保持部材９を設ている。この場合、補強用薄膜保持
部材９を設ける位置、大きさをパタン転写時に転写され
ないように設定しなければならない。例えば、１個のマ
スクに２チップ分のマスクパタンが形成されている場合
には、二つのチップの境界部分（スクライブ領域）に対
応する部分に薄膜保持部材を設ければ良い。FIG. 3 is a perspective view showing the structure of still another embodiment of the exposure mask according to the present invention. In the drawing, in order to make the structure of the holding member 3 easy to see, the pellicle film 2 is removed. In this embodiment, the thin film strength of the pellicle film 2 is reinforced when the mask pattern area is large. As shown in the figure, a reinforcing thin film holding member 9 is provided in addition to the above holding member 3. In this case, the position and size of the reinforcing thin film holding member 9 must be set so as not to be transferred during pattern transfer. For example, when a mask pattern for two chips is formed on one mask, the thin film holding member may be provided at a portion corresponding to a boundary portion (scribe area) of two chips.

【００１６】図４は、本発明による露光用マスクの更に
他の実施例の構成を示す斜視図である。この図面も保持
部材３の構造を見やすくするため、ペリクル膜２を除い
た状態で示している。本実施例は、保持部材３の領域１
０内に円形の開口部を各辺に１０個ずつ（図示せず）設
け、さらに領域１０を覆うようにフィルタ材を固定した
構成である。FIG. 4 is a perspective view showing the structure of still another embodiment of the exposure mask according to the present invention. Also in this drawing, in order to make the structure of the holding member 3 easier to see, the pellicle film 2 is removed. In this embodiment, the holding member 3 has an area 1
The configuration is such that 10 circular openings (not shown) are provided in each side of 0 and filter material is fixed so as to cover the region 10.

【００１７】図５及び図６はそれぞれ本発明の露光用マ
スクの実施例における、開口部５及びその開口部５に設
けられるフィルタ６の第１の構成例を示す図である。保
持部材３の高さ方向（マスク基板に垂直）のほぼ中心部
に、外側に円形溝５−２に形成し、円形溝５−２の中心
部に開口部５−１を形成した。更に、図６に示すよう
に、円形溝５−２にちょうど入る円形溝５−２の深さよ
り薄いフィルタ材６−１を円形溝５−２にはめ込み、さ
らにゴム製円形リング７によりフィルタ材６−１を固定
している。FIGS. 5 and 6 are views showing a first configuration example of the opening 5 and the filter 6 provided in the opening 5 in the embodiment of the exposure mask of the present invention. A circular groove 5-2 was formed on the outer side at approximately the center of the holding member 3 in the height direction (perpendicular to the mask substrate), and an opening 5-1 was formed at the center of the circular groove 5-2. Further, as shown in FIG. 6, a filter material 6-1 which is thinner than the depth of the circular groove 5-2 which fits in the circular groove 5-2 is fitted into the circular groove 5-2, and further, the filter material 6 is attached by the rubber circular ring 7. -1 is fixed.

【００１８】図７は本発明の露光用マスクの実施例にお
ける、開口部５及びその開口部５に設けられるフィルタ
６の第２の構成例を示す図である。保持部材３の高さ方
向のほぼ中心部に、円形穴５が形成され、円形穴５の外
側に正方形のフィルタ材６を円形穴５を塞ぐように乗
せ、フィルタ材６を覆う長方形の固定部材８を用いてフ
ィルタ材６を保持部材３に保持部材３に固定している。
なお、図８の開口部５及びその開口部５に設けられるフ
ィルタ６の第３の構成例に示すように、フィルタ材６の
大きさの溝を保持部材３の開口部５周辺に形成して、フ
ィルタ材６の一部分が嵌まり込む様に構成してもよい。FIG. 7 is a diagram showing a second configuration example of the opening 5 and the filter 6 provided in the opening 5 in the embodiment of the exposure mask of the present invention. A circular hole 5 is formed substantially at the center in the height direction of the holding member 3, and a square fixing member 6 is placed outside the circular hole 5 so as to cover the circular hole 5, and a rectangular fixing member that covers the filtering member 6. The filter material 6 is fixed to the holding member 3 by using 8.
As shown in the third configuration example of the opening 5 and the filter 6 provided in the opening 5 in FIG. 8, a groove having the size of the filter material 6 is formed around the opening 5 of the holding member 3. Alternatively, the filter member 6 may be configured so that a part thereof is fitted therein.

【００１９】図９及び図１０はそれぞれ本発明の露光用
マスクの実施例における、開口部５及びその開口部５に
設けられるフィルタ６の第４及び第５の構成例を示す図
である。これらは図７及び図８のような固定部材８を用
いず、フィルタ材６の１部を保持部材３に形成された溝
又は開口部５に嵌め込んで固定したものである。FIGS. 9 and 10 are views showing fourth and fifth configuration examples of the opening 5 and the filter 6 provided in the opening 5 in the embodiment of the exposure mask of the present invention. These do not use the fixing member 8 as shown in FIGS. 7 and 8, but fix a part of the filter material 6 by fitting it into a groove or opening 5 formed in the holding member 3.

【００２０】以下、本発明の具体的実施例について述べ
る。 具体的実施例１ 本実施例は、最小設計寸法０．２μｍの２５６メガビッ
トＤＲＡＭ（ダイナミックランダムアクセスメモリ）級
半導体素子の配線パタン製造工程用で用いる５：１Ｘ線
（露光波長１３．８ｎｍ）縮小露光装置用の反射型マス
クに使用するために構成したものである。本実施例にお
けるマスク基板１の寸法は実質的に５インチ角であり、
マスクパタンはマスク中心を中心に１００ｍｍ角の領域
内に形成した。Specific examples of the present invention will be described below. Specific Example 1 This example is a 5: 1 X-ray (exposure wavelength 13.8 nm) reduction exposure used for a wiring pattern manufacturing process of a 256-megabit DRAM (dynamic random access memory) class semiconductor element having a minimum design dimension of 0.2 μm. It is configured for use in a reflective mask for a device. The dimensions of the mask substrate 1 in this embodiment are substantially 5 inches square,
The mask pattern was formed within a 100 mm square area centered on the center of the mask.

【００２１】ペリクル膜の保持部材３としてアルミ枠
（外側１１５ｍｍ角、内側１１０ｍｍ角、高さ１０ｍ
ｍ）を使用した。図５及び図６示す構造の開口部５を設
けた。保持部材３の一辺の側面のほぼ中心部に内径５ｍ
ｍの円形溝５−２を深さ３ｍｍに形成し、この開口部の
ほぼ中心部に内径２ｍｍの開口５−２を形成し、開口部
５を形成した。内径５ｍｍの円形溝５−２にちょうど入
る０．１μｍ以上の寸法の異物の通過を防止する厚さ
１．５ｍｍの円形のフィルタ材６を用意し、これを上記
円形溝にはめ込み、さらに内径３ｍｍのゴム製円形リン
グ７により固定した。An aluminum frame (115 mm square outside, 110 mm square inside, height 10 m) as the holding member 3 for the pellicle film
m) was used. The opening 5 having the structure shown in FIGS. 5 and 6 was provided. An inner diameter of 5 m at the center of one side surface of the holding member 3
A circular groove 5-2 of m having a depth of 3 mm was formed, and an opening 5-2 having an inner diameter of 2 mm was formed at approximately the center of this opening to form an opening 5. Prepare a circular filter material 6 having a thickness of 1.5 mm to prevent the passage of foreign matter having a size of 0.1 μm or more that fits into the circular groove 5-2 having an inner diameter of 5 mm, fit this into the circular groove, and further set the inner diameter to 3 mm. It was fixed by a circular ring 7 made of rubber.

【００２２】次に、シリコン基板上に公知の方法によっ
てダイヤモンド薄膜を所定の膜厚に形成したものを用意
し、シリコン基板側を保持部材３に接着、固定した。そ
の後、保持部材３に接着されていない部分のシリコン基
板を所定の方法により選択的に除去してダイヤモンド薄
膜を露出させて、妨塵カバー体を製造した。次にこの防
塵カバー体をエポキシ樹脂を用いてマスク基板１のマス
クパタンが形成されたマスク面４上に接着、固定した。Next, a silicon thin film having a predetermined thickness formed on a silicon substrate by a known method was prepared, and the silicon substrate side was bonded and fixed to the holding member 3. After that, a portion of the silicon substrate not adhered to the holding member 3 was selectively removed by a predetermined method to expose the diamond thin film, and a dustproof cover body was manufactured. Next, this dustproof cover was adhered and fixed on the mask surface 4 of the mask substrate 1 on which the mask pattern was formed by using an epoxy resin.

【００２３】以上のようにして製造した露光用マスクを
上記縮小投影露光装置の真空容器内に設置して、所望の
真空度になるように真空引きした。ここで、ペリクル膜
２が破壊されないように十分な時間をかけて所望の真空
度まで真空引きした。所定のパタン露光を行なった後、
真空容器の真空を破って上記マスクを取り出した。ここ
で、大気圧まで十分に時間をかけて真空度をあげるよう
にした。以上で述べたようにしてマスクを取り扱った
が、防塵カバー体は破損することなく、又、ペリクル膜
２上に若干の異物が付着したが、パタン転写に影響しな
かった。なお、本実施例ではＸ線（露光波長１３．８ｎ
ｍ）縮小露光装置用の反射型マスクを例に説明したが、
他の様々なマスクあるいはレチクルに対しても上記方法
が適用可能である。The exposure mask manufactured as described above was placed in the vacuum container of the reduction projection exposure apparatus and evacuated to a desired degree of vacuum. Here, the pellicle film 2 was evacuated to a desired degree of vacuum for a sufficient time so as not to be broken. After performing a predetermined pattern exposure,
The vacuum of the vacuum container was broken and the mask was taken out. Here, it took time to raise the degree of vacuum to atmospheric pressure. When the mask was handled as described above, the dust-proof cover body was not damaged, and some foreign matter adhered to the pellicle film 2, but it did not affect the pattern transfer. In this embodiment, X-rays (exposure wavelength: 13.8n
m) The description has been given by taking the reflective mask for the reduction exposure apparatus as an example.
The above method can be applied to various other masks or reticles.

【００２４】具体的実施例２ 本実施例は最小設計寸法０．２μｍの２５６メガビット
ＤＲＡＭ（ダイナミックランダムアクセスメモリ）級半
導体素子の配線パタン製造工程用で用いる５：１Ｘ線
（露光波長４．６ｎｍ）縮小露光装置用の反射型マスク
に使用するために構成したものである。本実施例におけ
るマスク基板１の寸法は実質的に６インチ角であり、マ
スクパタンはマスク中心を中心に１１０ｍｍ角の領域内
に形成した。保持部材３としてアルミ枠（外側１２０ｍ
ｍ角、内側１１５ｍｍ角、高さ２０ｍｍ）を用いた。Concrete Example 2 This example is a 5: 1 X-ray (exposure wavelength 4.6 nm) used in the wiring pattern manufacturing process of a 256-megabit DRAM (Dynamic Random Access Memory) class semiconductor element having a minimum design dimension of 0.2 μm. It is configured for use in a reflective mask for a reduction exposure apparatus. The dimensions of the mask substrate 1 in this example are substantially 6 inches square, and the mask pattern was formed within a 110 mm square area centering on the mask center. Aluminum frame as the holding member 3 (120 m outside)
m square, 115 mm square inside, and 20 mm high) were used.

【００２５】次に、保持部材３の側面のほぼ中心部に内
径５ｍｍの円形開口５を形成した。このような開口部５
をそれぞれの辺に１個づつ合計４個設けた。本実施例に
おいて、マスク上に直接付着した場合に大きな問題とな
るような付着物の最小寸法は０．１μｍであった。そこ
で、本実施例において、０．１μｍ以上の寸法の異物通
過を妨げるような７ｍｍ角の角形のフィルタ材６を用
い、図７示した様に固定部材８を用いて保持部材３に設
けた開口部５を十分に覆うようにして固定した。Next, a circular opening 5 having an inner diameter of 5 mm was formed in the center of the side surface of the holding member 3. Such an opening 5
4 were provided, one on each side. In the present embodiment, the minimum size of the deposit that causes a serious problem when directly deposited on the mask was 0.1 μm. Therefore, in this embodiment, a 7 mm square prismatic filter material 6 that prevents passage of foreign matter having a size of 0.1 μm or more is used, and an opening formed in the holding member 3 by using the fixing member 8 as shown in FIG. The part 5 was fixed so as to cover it sufficiently.

【００２６】次に、公知の方法でニトロセルロース膜
（ペリクル膜として用いる）を作成し、これを保持部材
３に接着、固定して妨塵カバー体を製造した。この防塵
カバー体をエポキシ樹脂を用いて上記反射型マスク上に
接着、固定した。以上のようにして製造したマスクを上
記縮小投影露光装置の真空容器内に設置して、所望の真
空度になるように真空引きした。ここで、上記ペリクル
膜が破壊されないように十分な時間をかけて所望の真空
度まで真空引きした。所定のパタン露光を行なった後、
真空容器の真空を破って上記マスクを取り出した。ここ
で、大気圧まで十分に時間をかけて所望の真空度まであ
げるようにした。上述の露光用マスクの使用では、防塵
カバー体は破損することなく、また、ペリクル膜２に異
物が付着したが、パタン転写に影響することはなかっ
た。Next, a nitrocellulose membrane (used as a pellicle membrane) was prepared by a known method, and this was adhered and fixed to the holding member 3 to manufacture a dustproof cover body. This dustproof cover was adhered and fixed on the reflective mask using an epoxy resin. The mask manufactured as described above was placed in the vacuum container of the reduction projection exposure apparatus and evacuated to a desired degree of vacuum. Here, the pellicle film was evacuated to a desired degree of vacuum for a sufficient time so as not to be destroyed. After performing a predetermined pattern exposure,
The vacuum of the vacuum container was broken and the mask was taken out. Here, it took time to raise the pressure up to atmospheric pressure to a desired degree of vacuum. When the above-mentioned exposure mask was used, the dust-proof cover body was not damaged, and foreign matter adhered to the pellicle film 2, but it did not affect the pattern transfer.

【００２７】具体的実施例３ 本実施例は、最小設計寸法０．３μｍの６４メガビット
ＤＲＡＭ（ダイナミックランダムアクセスメモリ）配線
パタン製造工程用で用いる５：１ｉ線（露光波長３６５
ｎｍ）縮小露光装置用の位相シフトマスクに使用するた
めに構成したものである。まず、位相シフトマスクを公
知の方法によって製造した。本実施例におけるマスク基
板１の寸法は６インチ角であり、マスクパタンはマスク
中心を中心に１１０ｍｍ角の領域内に形成した。保持部
材３としてアルミ枠（外径１２０ｍｍ角、内径１１５ｍ
ｍ角、高さ１０ｍｍ）を用意し、この保持部材３の側面
のほぼ中心部に内径５ｍｍの円形の開口部５を形成し
た。本実施例における開口部５及びフィルタの構成は図
９のように構成した。開口部５をそれぞれの辺に合計４
個設けた。本実施例において、マスク上に直接付着した
場合にパタン転写異常を生じる様な付着物の最小寸法は
０．２μｍであった。そこで、本実施例において、０．
２μｍ以上の寸法の異物通過を妨げるような直径７ｍｍ
の角形のエポキシ樹脂のフィルタ材６を使用した。Concrete Example 3 In this example, a 5: 1 i line (exposure wavelength 365) used for a manufacturing process of a 64 megabit DRAM (dynamic random access memory) wiring pattern having a minimum design dimension of 0.3 μm is used.
nm) for use as a phase shift mask for a reduction exposure apparatus. First, a phase shift mask was manufactured by a known method. The size of the mask substrate 1 in this embodiment is 6 inches square, and the mask pattern is formed within a 110 mm square area centering on the mask center. Aluminum frame as the holding member 3 (120 mm square outer diameter, 115 m inner diameter)
An m square and a height of 10 mm) were prepared, and a circular opening 5 having an inner diameter of 5 mm was formed at the substantially central portion of the side surface of the holding member 3. The structure of the opening 5 and the filter in this embodiment is as shown in FIG. 4 openings on each side
I provided one. In the present embodiment, the minimum size of the deposit that causes pattern transfer abnormality when directly deposited on the mask was 0.2 μm. Therefore, in the present embodiment, 0.
Diameter 7 mm that prevents the passage of foreign matter of 2 μm or more
The rectangular filter material 6 made of epoxy resin was used.

【００２８】次に、公知の方法に所定の厚さのニトロセ
ルロース膜（ペリクル膜として用いる）を作成し、これ
を上記アルミ枠に接着、固定して所望の妨塵カバー体を
製造した。この防塵カバー体をエポキシ樹脂を用いて上
記位相シフトマスクに接着、固定した。露光用マスクを
通常の製造工程で用いたが、パタン転写異常を生じるよ
うな異物がマスク上に付着することはなく、マスクの寿
命を著しく延ばすことができた。 本実施例において、
上記マスクを保管する際にヘリウム雰囲気中で保管し
た。Next, a nitrocellulose membrane (used as a pellicle membrane) having a predetermined thickness was prepared by a known method, and this was adhered and fixed to the above-mentioned aluminum frame to manufacture a desired dustproof cover body. This dustproof cover was adhered and fixed to the phase shift mask using an epoxy resin. Although the exposure mask was used in a normal manufacturing process, foreign matter that would cause pattern transfer abnormality did not adhere to the mask, and the life of the mask could be remarkably extended. In this example,
The mask was stored in a helium atmosphere.

【００２９】具体的実施例４ 本実施例では、保持部材に直径５００μｍの開口部を各
辺に一つずつ計４個設けた防塵カバー体を設けたマスク
を製造した。このマスクを所定の製造工程で用いたが、
気圧等環境も変化に対してペリクル膜が安定していたた
め、開口部を設けない防塵カバー体を設けたマスクと比
較して、より高精度に所望のパタンを転写することがで
きた。Concrete Example 4 In this example, a mask was manufactured in which a holding member was provided with a dustproof cover body having a total of four openings each having a diameter of 500 μm on each side. I used this mask in a given manufacturing process,
Since the pellicle film was stable against changes in the environment such as atmospheric pressure, it was possible to transfer a desired pattern with higher accuracy as compared with a mask provided with a dustproof cover body having no opening.

【００３０】以上、本発明の実施例について説明した
が、本発明は上記実施例に限定されるものではない。な
お、このような構造の妨塵カバー体は、マスク面を保護
することのみならず、感光性基板を保護するためにも使
用できる。これは、露光されるべき感光性基板上に異物
等が付着したり、あるいは感光性基板に対する光が遮断
されることを防止するものである。また、異物等の付着
を防止する為に、他のさまざまな構造体に応用できるこ
とは言うまでもない。Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments. The dustproof cover having such a structure can be used not only for protecting the mask surface but also for protecting the photosensitive substrate. This prevents foreign matter or the like from adhering to the photosensitive substrate to be exposed, or blocking of light to the photosensitive substrate. Further, it goes without saying that it can be applied to various other structures in order to prevent adhesion of foreign matters and the like.

【００３１】[0031]

【発明の効果】以上本発明によれば、異物等の付着によ
るパタン転写の欠陥を生じることの無いマスクが得ら
れ、また、マスクの寿命を延ばすことができる。さら
に、半導体集積回路などの素子製造工程の歩留まりを向
上し、生産性を向上することができる。As described above, according to the present invention, it is possible to obtain a mask which does not cause a pattern transfer defect due to adhesion of foreign matters and the like, and it is possible to extend the life of the mask. Further, it is possible to improve the yield in the element manufacturing process such as a semiconductor integrated circuit and improve the productivity.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明による露光用マスクの第１の実施例の構
成を示す斜視図である。FIG. 1 is a perspective view showing a configuration of a first embodiment of an exposure mask according to the present invention.

【図２】本発明による露光用マスクの第２の実施例の構
成を示す斜視図である。FIG. 2 is a perspective view showing a configuration of a second embodiment of an exposure mask according to the present invention.

【図３】本発明による露光用マスクの第３の実施例の構
成を示す斜視図である。FIG. 3 is a perspective view showing a configuration of a third embodiment of an exposure mask according to the present invention.

【図４】本発明による露光用マスクの第４の実施例の構
成を示す斜視図である。FIG. 4 is a perspective view showing a configuration of a fourth example of an exposure mask according to the present invention.

【図５】本発明の実施例における、開口部の第１の構成
例を示す図である。FIG. 5 is a diagram showing a first configuration example of the opening in the embodiment of the present invention.

【図６】図５の開口部にフィルタ材を固定した構成例を
示す図である。FIG. 6 is a diagram showing a configuration example in which a filter material is fixed to the opening of FIG.

【図７】本発明の実施例における、開口部及びフィルタ
材の第２の構成例を示す図である。FIG. 7 is a diagram showing a second configuration example of the opening and the filter material in the example of the present invention.

【図８】本発明の実施例における、開口部及びフィルタ
材の第３の構成例を示す図である。FIG. 8 is a diagram showing a third configuration example of the opening and the filter material in the example of the present invention.

【図９】本発明の実施例における、開口部及びフィルタ
材の第４の構成例を示す図である。FIG. 9 is a diagram showing a fourth configuration example of the opening and the filter material in the example of the present invention.

【図１０】本発明の実施例における、開口部及びフィル
タ材の第５の構成例を示す図である。FIG. 10 is a diagram showing a fifth configuration example of the opening and the filter material in the example of the present invention.

【符号の説明】[Explanation of symbols]

１：マスク、 ６：フィルタ材 ２：露光光に対してほぼ透明な膜、 ７：固定部材、
３：保持部材、 ８：固定部材、４：マスクパタ
ンが形成されたマスク面、９：薄膜保持部材、５：開口
部、 １０：領域。1: Mask, 6: Filter material 2: Film that is almost transparent to exposure light, 7: Fixing member,
3: holding member, 8: fixing member, 4: mask surface on which a mask pattern is formed, 9: thin film holding member, 5: opening, 10: region.

Claims (6)

【特許請求の範囲】[Claims] 【請求項１】転写用のマスクパタンが形成された基板
と、上記基板のマスクパタンから所定の間隔をおいて透
明薄膜を設けるための壁状保持部材とを有する露光用マ
スクにおいて、上記保持部材に１個以上の開口部を設け
て構成されたことを特徴とする露光用マスク。1. An exposure mask having a substrate on which a transfer mask pattern is formed and a wall-shaped holding member for providing a transparent thin film at a predetermined distance from the mask pattern of the substrate, wherein the holding member is provided. An exposure mask, characterized in that it is configured by providing one or more openings in the. 【請求項２】請求項１記載の露光用マスクにおいて、上
記基板は、所定の露光光に対して反射率の高い領域及び
反射率の低い領域を有するマスクパタンが形成された基
板であることを特徴とする露光用マスク。2. The exposure mask according to claim 1, wherein the substrate is a substrate on which a mask pattern having a region having a high reflectance and a region having a low reflectance for predetermined exposure light is formed. Characteristic exposure mask. 【請求項３】請求項１記載の露光用マスクにおいて、上
記基板は透光性の材質であり、上記マスクパタンは上記
基板の一面に形成され、更に上記基板の他面に、上記基
板の他面から所定の間隔をおいて透明薄膜を設けるため
の壁状の他の保持部材を有し、上記他の保持部材に１個
以上の開口部を設けて構成されたことを特徴とする露光
用マスク。3. The exposure mask according to claim 1, wherein the substrate is a translucent material, the mask pattern is formed on one surface of the substrate, and the mask pattern is formed on the other surface of the substrate. An exposure device characterized in that it has another wall-shaped holding member for providing a transparent thin film at a predetermined distance from the surface, and the other holding member is provided with one or more openings. mask. 【請求項４】請求項１、２又は３記載の露光用マスクに
おいて、上記透明薄膜がダイヤモンド膜であることを特
徴とする露光用マスク。4. The exposure mask according to claim 1, 2 or 3, wherein the transparent thin film is a diamond film. 【請求項５】請求項１、２、３又は４記載の露光用マス
クにおいて、上記開口部の寸法が上記露光用マスクを用
いる露光装置の解像限界寸法のマスク上換算寸法以下で
あることを特徴とする露光用マスク。5. The exposure mask according to claim 1, 2, 3 or 4, wherein the size of the opening is equal to or smaller than the on-mask conversion size of the resolution limit size of an exposure apparatus using the exposure mask. Characteristic exposure mask. 【請求項６】請求項１、２、３又は４記載の露光用マス
クにおいて、上記開口部に所定の寸法以上の粒子の通過
を妨げるフィルタ材を設けたことを特徴とする露光用マ
スク。6. The exposure mask according to claim 1, 2, 3 or 4, wherein a filter material for preventing passage of particles having a predetermined size or more is provided in the opening.
JP31612691A 1991-11-29 1991-11-29 Mask for exposure Pending JPH05150445A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31612691A JPH05150445A (en) 1991-11-29 1991-11-29 Mask for exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31612691A JPH05150445A (en) 1991-11-29 1991-11-29 Mask for exposure

Publications (1)

Publication Number Publication Date
JPH05150445A true JPH05150445A (en) 1993-06-18

Family

ID=18073541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31612691A Pending JPH05150445A (en) 1991-11-29 1991-11-29 Mask for exposure

Country Status (1)

Country Link
JP (1) JPH05150445A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001005169A (en) * 1999-06-24 2001-01-12 Shin Etsu Chem Co Ltd Pellicle and production of pellicle
US6317479B1 (en) 1996-05-17 2001-11-13 Canon Kabushiki Kaisha X-ray mask, and exposure method and apparatus using the same
WO2002069379A1 (en) * 2001-02-26 2002-09-06 Nikon Corporation X-ray reflective mask, method of protecting the reflective mask, x-ray exposure device, and method of manufacturing semiconductor device
JP2006093318A (en) * 2004-09-22 2006-04-06 Tohoku Univ Euv exposure device, euv exposure method and reflection type mask
JP2007052429A (en) * 2005-08-15 2007-03-01 Micro Lithography Inc Optical pellicle frame
US7551265B2 (en) 2004-10-01 2009-06-23 Nikon Corporation Contact material and system for ultra-clean applications
US7862961B2 (en) 2006-02-16 2011-01-04 Nikon Corporation Mask and exposure apparatus
JP2012220533A (en) * 2011-04-04 2012-11-12 Shin Etsu Chem Co Ltd Pellicle, and method for manufacturing pellicle film
TWI463252B (en) * 2006-02-16 2014-12-01 尼康股份有限公司 Exposure apparatus, exposure method and micro-device manufacturing method

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6317479B1 (en) 1996-05-17 2001-11-13 Canon Kabushiki Kaisha X-ray mask, and exposure method and apparatus using the same
US6728332B2 (en) 1996-05-17 2004-04-27 Canon Kabushiki Kaisha X-ray mask, and exposure method and apparatus using the same
US7072438B2 (en) 1996-05-17 2006-07-04 Canon Kabushiki Kaisha Reflection type mask
JP2001005169A (en) * 1999-06-24 2001-01-12 Shin Etsu Chem Co Ltd Pellicle and production of pellicle
WO2002069379A1 (en) * 2001-02-26 2002-09-06 Nikon Corporation X-ray reflective mask, method of protecting the reflective mask, x-ray exposure device, and method of manufacturing semiconductor device
JP2006093318A (en) * 2004-09-22 2006-04-06 Tohoku Univ Euv exposure device, euv exposure method and reflection type mask
US7551265B2 (en) 2004-10-01 2009-06-23 Nikon Corporation Contact material and system for ultra-clean applications
JP2007052429A (en) * 2005-08-15 2007-03-01 Micro Lithography Inc Optical pellicle frame
US7862961B2 (en) 2006-02-16 2011-01-04 Nikon Corporation Mask and exposure apparatus
TWI463252B (en) * 2006-02-16 2014-12-01 尼康股份有限公司 Exposure apparatus, exposure method and micro-device manufacturing method
JP2012220533A (en) * 2011-04-04 2012-11-12 Shin Etsu Chem Co Ltd Pellicle, and method for manufacturing pellicle film

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