JPH05148631A - Target for sputtering - Google Patents
Target for sputteringInfo
- Publication number
- JPH05148631A JPH05148631A JP28691391A JP28691391A JPH05148631A JP H05148631 A JPH05148631 A JP H05148631A JP 28691391 A JP28691391 A JP 28691391A JP 28691391 A JP28691391 A JP 28691391A JP H05148631 A JPH05148631 A JP H05148631A
- Authority
- JP
- Japan
- Prior art keywords
- target
- alloy
- subjected
- sintered
- welding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、スパッタリング用ター
ゲットに係り、特に、磁性材料であるＣｒ−Ｐｔ−Ｃｏ
系合金をスパッタリングする際に好適に用いられるスパ
ッタリング用ターゲットに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering target, and more particularly to a magnetic material Cr-Pt-Co.
The present invention relates to a sputtering target that is preferably used when sputtering a system alloy.
【０００２】[0002]
【従来の技術】近年、情報機器の急激な進歩に伴い、記
憶装置の主要部を構成する磁気ディスクや磁気ヘッドに
ついても高保磁力かつ高密度であることが求められ、例
えば、薄膜のハードディスクでは強磁性材料をマグネト
ロンスパッタ等により直接基板上に形成する方法が採ら
れている。上記スパッタにおいて使用されるターゲット
の材料としては、磁性材料として優れた特性を備えてい
るＣｒ−Ｐｔ−Ｃｏ系合金が知られており、この合金か
らなるターゲットは一般的に粉末冶金法により製造され
ている。2. Description of the Related Art In recent years, with the rapid progress of information equipment, magnetic disks and magnetic heads constituting the main part of storage devices are required to have high coercive force and high density. A method of directly forming a magnetic material on a substrate by magnetron sputtering or the like is adopted. As a target material used in the above-mentioned sputtering, a Cr-Pt-Co alloy having excellent characteristics as a magnetic material is known, and a target made of this alloy is generally manufactured by a powder metallurgy method. ing.
【０００３】[0003]
【発明が解決しようとする課題】ところで、Ｃｒ−Ｐｔ
−Ｃｏ系合金を用いたターゲットは材料自体が溶接し難
いものであるために、ターゲット製造時に溶接性に起因
する不具合が発生するという欠点があった。特に、大型
もしくは複雑な形状のターゲットを製造する場合には、
複数のターゲット部材を所定の形状に組立た後にこれら
のターゲット部材相互を溶接するのが通例であるが、こ
の材料が溶接し難いために極めて高度の溶接技術を必要
とし、また、溶接作業自体極めて困難なものであるから
生産効率が悪く、製品歩留まりも低いという欠点があっ
た。By the way, Cr-Pt
Since the target itself using the —Co alloy is difficult to weld itself, there is a drawback in that a defect due to weldability occurs during target production. Especially when manufacturing targets with large or complicated shapes,
After assembling a plurality of target members into a predetermined shape, it is customary to weld these target members to each other, but since this material is difficult to weld, extremely advanced welding technology is required, and the welding operation itself is extremely difficult. Since they are difficult, they have the drawbacks of low production efficiency and low product yield.
【０００４】また、このターゲットでは、Ｃｒ−Ｐｔ−
Ｃｏ系合金中に含まれるＰｔが極めて高価な貴金属であ
ることから、ターゲットの材料を有効に利用する必要性
があり、そのために使用済みのターゲットを再利用する
ことが考えられている。この場合、ターゲットのマグネ
トロン放電を起こす領域に生じた凹部に、同種のターゲ
ット材料を充填し溶接する、いわゆる肉盛溶接（補修溶
接）が有力であるが、この方法では溶接が不十分になり
がちで、充填されたターゲット材が剥離したりあるいは
肉盛溶接部分に亀裂が生じたり等の不具合が生じ易く、
ターゲット材料自体を改善する必要性があった。In this target, Cr-Pt-
Since Pt contained in the Co-based alloy is an extremely expensive noble metal, it is necessary to effectively use the target material, and it is considered to reuse the used target for that purpose. In this case, so-called build-up welding (repair welding), which fills and welds the target material of the same type into the recesses formed in the region where the magnetron discharge of the target occurs, is effective, but this method tends to result in insufficient welding. Therefore, it is easy to cause problems such as peeling of the filled target material or cracks in the overlay welding portion,
There was a need to improve the target material itself.
【０００５】本発明は、上記の事情に鑑みてなされたも
のであって、材料自体の溶接性を改善することのできる
Ｃｒ−Ｐｔ−Ｃｏ系のターゲットを提供することにあ
る。The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a Cr-Pt-Co-based target capable of improving the weldability of the material itself.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
に、本発明は次の様なターゲットを採用した。すなわ
ち、Ｃｒ５〜２０重量％、Ｐｔ１０〜５５重量％、Ｂ
０.００１〜０.５重量％含有し、残部がＣｏからなるこ
とを特徴としている。In order to solve the above problems, the present invention employs the following targets. That is, Cr 5 to 20 wt%, Pt 10 to 55 wt%, B
It is characterized by containing 0.001 to 0.5% by weight and the balance being Co.
【０００７】ここで、Ｃｒ，Ｐｔ，Ｃｏの各成分の組成
が上記範囲を外れている場合には、スパッタリングによ
る生成膜の磁気特性が所望の値とならないために実用上
不適当であり、また、Ｐｔが５５重量％を越えている場
合には、脆さが増大して圧延が困難になる。If the composition of each component of Cr, Pt, and Co is out of the above range, the magnetic properties of the film produced by sputtering will not be the desired values, which is not suitable for practical use. If Pt exceeds 55% by weight, brittleness increases and rolling becomes difficult.
【０００８】また、Ｂの添加量が上記範囲の下限を下回
る場合には前記元素の効果が極めて小さなものとなり、
また、上記範囲の上限を上回る場合には前記元素の効果
が飽和しターゲットの特性を低下させるために、実用上
不適当である。When the amount of B added is less than the lower limit of the above range, the effect of the above elements becomes extremely small,
On the other hand, when the content exceeds the upper limit of the above range, the effect of the above elements is saturated and the characteristics of the target are deteriorated, which is not suitable for practical use.
【０００９】[0009]
【作用】本発明のターゲットでは、Ｃｒを５〜２０重量
％、Ｐｔを１０〜５５重量％、Ｂを０.００１〜０.５重
量％含有し、残部をＣｏとすることにより、従来のＢを
添加しないＣｒ−Ｐｔ−Ｃｏ系合金のターゲットと比べ
て溶接性が向上する。The target of the present invention contains Cr in an amount of 5 to 20% by weight, Pt in an amount of 10 to 55% by weight, B in an amount of 0.001 to 0.5% by weight, and the balance of Co in the conventional B content. The weldability is improved as compared with the target of the Cr-Pt-Co based alloy in which is not added.
【００１０】[0010]
【実施例】以下、本発明のターゲットのー実施例につい
て説明する。本発明に係るターゲットは、図１に示す様
な製造方法により作成した。まず、表１に示す組成とな
る様にターゲットの原料をそれぞれ所定量秤量した。EXAMPLES Examples of the target of the present invention will be described below. The target according to the present invention was prepared by the manufacturing method as shown in FIG. First, a predetermined amount of each target raw material was weighed so that the composition shown in Table 1 was obtained.
【００１１】[0011]
【表１】 [Table 1]
【００１２】これらの原料としては４Ｎ〜５Ｎの塊もし
くは４Ｎ〜５Ｎの粉体を用いた。次に、これらの原料を
真空溶解炉のアルミナルツボ内に投入し、この混合物を
加熱し溶融した。As these raw materials, lumps of 4N to 5N or powders of 4N to 5N were used. Next, these raw materials were put into an alumina crucible of a vacuum melting furnace, and this mixture was heated and melted.
【００１３】次に、上記の溶融物を、真空中、あるいは
不活性もしくは還元性のいずれかの雰囲気中において、
耐熱性の金型に充填し鋳造した。この金型に充填された
溶融物は、冷却されるにしたがって除々に凝固し、Ｃｒ
−Ｐｔ−Ｃｏ系合金のインゴットとなった。Next, the above melt is subjected to a vacuum or in an inert or reducing atmosphere.
A heat-resistant mold was filled and cast. The melt filled in this mold gradually solidifies as it cools, and Cr
It became an ingot of -Pt-Co alloy.
【００１４】次に、このインゴットを金型から取り出
し、ワイヤーカット加工や放電加工等の機械加工により
該インゴットを所定の形状に切断し、直方体状の素板と
した。Next, the ingot was taken out of the mold, and the ingot was cut into a predetermined shape by machining such as wire cutting or electric discharge machining to obtain a rectangular parallelepiped blank plate.
【００１５】次に、この素板をステンレススチ−ル等か
らなる金属缶に挿入した後に真空下において密封し、該
素板に熱間静水圧プレス（ＨＩＰ）処理を施し焼結体と
した。なお、ＨＩＰ処理の条件は下記の通りである。 静水圧 ：１ｔｏｎ／ｃｍ2（等方圧） 保持温度：１２５０℃ 保持時間：２時間 冷 却：炉冷 得られた焼結体に対し、６００℃で３０分間焼鈍を行っ
た。Next, this blank was inserted into a metal can made of stainless steel or the like and then sealed under vacuum, and the blank was subjected to hot isostatic pressing (HIP) to obtain a sintered body. The conditions of HIP processing are as follows. Hydrostatic pressure: 1 ton / cm 2 (isotropic pressure) Holding temperature: 1250 ° C. Holding time: 2 hours Cooling: Furnace cooling The obtained sintered body was annealed at 600 ° C. for 30 minutes.
【００１６】次に、圧縮率Ｔを５％として圧延を行っ
た。この時の圧縮率Ｔは、 Ｔ＝ΔＴ／Ｔ0 ×１００ により求められる。ここで、ΔＴは素板の厚みの減少
量、Ｔ0 は圧延前における素板の厚みである。以上の焼
鈍・圧延を繰り返し行い、所定の厚みの焼結体を得た。Next, rolling was performed with a compressibility T of 5%. The compression rate T at this time is obtained by T = ΔT / T 0 × 100. Here, ΔT is the reduction amount of the thickness of the raw plate, and T 0 is the thickness of the raw plate before rolling. The above annealing / rolling was repeated to obtain a sintered body having a predetermined thickness.
【００１７】また、この焼結体の厚みが所定の厚みにな
らない場合は、該焼結体の厚みが所定の厚みになるまで
更に焼鈍・圧延を繰り返し行い、所定の厚みとした。こ
こでは、圧延された焼結体の形状を５０ｍｍ角、厚み１
０ｍｍとした。When the thickness of this sintered body does not reach the predetermined thickness, further annealing / rolling is repeated until the thickness of the sintered body reaches the predetermined thickness to obtain the predetermined thickness. Here, the shape of the rolled sintered body is 50 mm square and the thickness is 1
It was set to 0 mm.
【００１８】次に、１００℃で１時間熱処理を行い焼結
体内部の歪を取り除き、加圧成形等により該焼結体の形
状を矯正し、切削加工、ワイヤーカット加工、鏡面研磨
等の仕上加工を行い、プレート上に該焼結体を固定し
（ボンディング）、製品（ターゲット）とした。Next, heat treatment is performed at 100 ° C. for 1 hour to remove strain inside the sintered body, and the shape of the sintered body is corrected by pressure molding or the like, and finishing such as cutting, wire cutting, and mirror polishing is performed. After processing, the sintered body was fixed on the plate (bonding) to obtain a product (target).
【００１９】また、上記実施例のターゲットと比較する
ために、表２の様に上記実施例の構成成分のうちＢを含
まない組成のターゲットを上記実施例とまったく同一の
製造工程により製造し、比較例とした。For comparison with the target of the above embodiment, a target having a composition not containing B among the constituents of the above embodiment is manufactured by the same manufacturing process as that of the above embodiment, as shown in Table 2. It was used as a comparative example.
【００２０】[0020]
【表２】 [Table 2]
【００２１】表３は、本発明の組成のターゲット（実施
例）とＢを含まない組成のターゲット（比較例）各々の
溶接部の割れや欠け等の不具合いを調べるために行った
ビードオンプレートによるカラーチェック試験の結果を
まとめたものである。ここでは、各ターゲットの上に３
本のビードを平行に置き（ＴＩＧ溶接電流１０Ａ、溶接
速度２００ｍｍ／ｍｉｎ）、表面に赤色塗料を塗布した
後これを拭い、この表面に白粉を塗布して赤色塗料がに
じみ出たか否かにより評価を行った。Table 3 shows a bead-on-plate which was used to check for defects such as cracks and chips at the welded portions of the target of the present invention (Example) and the target not containing B (Comparative Example). It is a summary of the results of the color check test by. Here, 3 on each target
The beads of the book are placed in parallel (TIG welding current 10A, welding speed 200mm / min), the surface is coated with red paint and then wiped, and white powder is applied to this surface to evaluate whether the red paint oozes out. went.
【００２２】[0022]
【表３】 [Table 3]
【００２３】表３から明らかなように、本発明のターゲ
ット（実施例）は、Ｂを含まない組成のターゲット（比
較例）と比べて、カラーチェック試験の結果が極めて良
く、したがって、ターゲット材の溶接性が優れているこ
とがわかる。As is clear from Table 3, the target of the present invention (Example) has a very good result in the color check test as compared with the target having a composition not containing B (Comparative Example). It can be seen that the weldability is excellent.
【００２４】以上説明した様に、上記実施例のターゲッ
トによれば、Ｃｒ５〜２０重量％、Ｐｔ１０〜５５重量
％、Ｂ０.００１〜０.５重量％含有し、残部がＣｏから
なることとしたので、従来のＢを含まないＣｒ−Ｐｔ−
Ｃｏ系合金のターゲットと比べて溶接性を向上させるこ
とができる。したがって、ターゲット製造時に溶接性に
起因する不具合が発生する恐れもなくなり、また、肉盛
溶接の際においても剥離や亀裂等の不具合が解消され
る。As explained above, according to the targets of the above-mentioned examples, Cr is contained in an amount of 5 to 20% by weight, Pt is in an amount of 10 to 55% by weight, B is 0.001 to 0.5% by weight, and the balance is Co. Therefore, the conventional B-free Cr-Pt-
The weldability can be improved as compared with the Co-based alloy target. Therefore, there is no fear that a defect due to the weldability will occur at the time of manufacturing the target, and defects such as peeling and cracks will also be eliminated at the time of overlay welding.
【００２５】なお、本発明のターゲットは、必要とされ
るターゲットの組成や大きさ等により、上述した製造方
法に限定されることなく様々な製造方法を適用すること
が可能である。例えば、小さな形状の場合やＨＩＰ処理
を行わなくとも均質性を高めることのできるある種の合
金の場合では、溶解、鋳造した合金に仕上加工を施しボ
ンディングしてもよい。また、ＨＩＰ処理により充分均
質性を有する合金の場合には、ＨＩＰ処理した焼結体を
焼鈍せずに仕上加工を施しボンディングしてもよい。ま
た、ＨＩＰ処理の替わりにホットプレス（ＨＰ）を適用
しても同様の効果を得ることができる。また、従来のタ
ーゲットと同様に粉末冶金法を適用しても同様の効果を
得ることができるのは勿論である。The target of the present invention is not limited to the above-mentioned manufacturing method, and various manufacturing methods can be applied depending on the required composition and size of the target. For example, in the case of a small shape or in the case of a certain alloy whose homogeneity can be improved without HIP treatment, the melted and cast alloy may be subjected to finishing and bonding. Further, in the case of an alloy having sufficient homogeneity by HIP treatment, the HIP-treated sintered body may be subjected to finishing processing and bonding without being annealed. Also, the same effect can be obtained by applying hot press (HP) instead of HIP processing. Moreover, it is needless to say that the same effect can be obtained by applying the powder metallurgy method as in the conventional target.
【００２６】[0026]
【発明の効果】以上説明した様に、本発明のターゲット
によれば、Ｃｒ５〜２０重量％、Ｐｔ１０〜５５重量
％、Ｂ０.００１〜０.５重量％含有し、残部がＣｏから
なることとしたので、従来のＢを含まないＣｒ−Ｐｔ−
Ｃｏ系合金のターゲットと比べて溶接性を向上させるこ
とができる。したがって、ターゲット製造時に溶接性に
起因する不具合が発生する恐れもなくなり、また、肉盛
溶接の際においても剥離や亀裂等の不具合が解消され
る。As described above, according to the target of the present invention, Cr is contained in an amount of 5 to 20% by weight, Pt is 10 to 55% by weight, B is 0.001 to 0.5% by weight, and the balance is Co. Therefore, conventional Cr-Pt-free B-containing
The weldability can be improved as compared with the Co-based alloy target. Therefore, there is no fear that a defect due to the weldability will occur at the time of manufacturing the target, and defects such as peeling and cracks will also be eliminated at the time of overlay welding.
【図１】本発明のターゲットの製造方法を示す工程図で
ある。FIG. 1 is a process drawing showing a method for manufacturing a target of the present invention.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成４年１月１０日[Submission date] January 10, 1992
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１８[Correction target item name] 0018
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００１８】次に、１０００℃で１時間熱処理を行い焼
結体内部の歪を取り除き、加圧成形等により該焼結体の
形状を矯正し、切削加工、ワイヤーカット加工、鏡面研
磨等の仕上加工を行い、プレート上に該焼結体を固定し
（ボンディング）、製品（ターゲット）とした。Next, heat treatment is performed at 1000 ° C. for 1 hour to remove strain inside the sintered body, and the shape of the sintered body is corrected by pressure molding or the like, and finishing such as cutting, wire cutting, mirror polishing, etc. After processing, the sintered body was fixed on the plate (bonding) to obtain a product (target).
Claims (1)
量％、Ｂ０.００１〜０.５重量％含有し、残部がＣｏか
らなることを特徴とするスパッタリング用ターゲット。1. A sputtering target comprising 5 to 20% by weight of Cr, 10 to 55% by weight of Pt, 0.001 to 0.5% by weight of B, and the balance being Co.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28691391A JPH05148631A (en) | 1991-10-31 | 1991-10-31 | Target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28691391A JPH05148631A (en) | 1991-10-31 | 1991-10-31 | Target for sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05148631A true JPH05148631A (en) | 1993-06-15 |
Family
ID=17710608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28691391A Withdrawn JPH05148631A (en) | 1991-10-31 | 1991-10-31 | Target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05148631A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4438202A1 (en) * | 1994-10-26 | 1996-05-02 | Leybold Materials Gmbh | Cobalt@-platinum@-chromium@ alloy magnetron sputtering target |
| US6406600B1 (en) * | 1999-03-29 | 2002-06-18 | Hitachi Metals, Ltd. | CoPt-base sputtering target, method of making same, magnetic recording film and Co-Pt-base magnetic recording medium |
| WO2002083974A1 (en) * | 2001-04-11 | 2002-10-24 | Heraeus, Inc. | Pt-co based sputtering targets |
| WO2003025244A2 (en) * | 2001-09-17 | 2003-03-27 | Heraeus, Inc. | Refurbishing spent sputtering targets |
| CN100445417C (en) * | 2006-12-27 | 2008-12-24 | 湖南中精伦金属材料有限公司 | Production method of cobalt base alloy target for vertical magnetic recording medium soft magnetization bottom |
| CN108687492A (en) * | 2017-04-12 | 2018-10-23 | 宁波江丰电子材料股份有限公司 | The manufacturing method of target material assembly |
| CN110117775A (en) * | 2018-02-05 | 2019-08-13 | 光洋应用材料科技股份有限公司 | The platinum boron rhenium of chromium containing cobalt sputtered target material, the platinum of chromium containing cobalt boron rhenium layer and its preparation method |
-
1991
- 1991-10-31 JP JP28691391A patent/JPH05148631A/en not_active Withdrawn
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4438202A1 (en) * | 1994-10-26 | 1996-05-02 | Leybold Materials Gmbh | Cobalt@-platinum@-chromium@ alloy magnetron sputtering target |
| US6406600B1 (en) * | 1999-03-29 | 2002-06-18 | Hitachi Metals, Ltd. | CoPt-base sputtering target, method of making same, magnetic recording film and Co-Pt-base magnetic recording medium |
| EP1595971A1 (en) * | 2001-04-11 | 2005-11-16 | Heraeus, Inc. | Pt-Co based sputtering targets and method of fabricating them |
| WO2002083974A1 (en) * | 2001-04-11 | 2002-10-24 | Heraeus, Inc. | Pt-co based sputtering targets |
| US6797137B2 (en) | 2001-04-11 | 2004-09-28 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal |
| US7229588B2 (en) | 2001-04-11 | 2007-06-12 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidified alloy powders and elemental Pt metal |
| WO2003025244A2 (en) * | 2001-09-17 | 2003-03-27 | Heraeus, Inc. | Refurbishing spent sputtering targets |
| US7175802B2 (en) | 2001-09-17 | 2007-02-13 | Heraeus, Inc. | Refurbishing spent sputtering targets |
| WO2003025244A3 (en) * | 2001-09-17 | 2004-10-14 | Heraeus Inc | Refurbishing spent sputtering targets |
| CN100445417C (en) * | 2006-12-27 | 2008-12-24 | 湖南中精伦金属材料有限公司 | Production method of cobalt base alloy target for vertical magnetic recording medium soft magnetization bottom |
| CN108687492A (en) * | 2017-04-12 | 2018-10-23 | 宁波江丰电子材料股份有限公司 | The manufacturing method of target material assembly |
| CN110117775A (en) * | 2018-02-05 | 2019-08-13 | 光洋应用材料科技股份有限公司 | The platinum boron rhenium of chromium containing cobalt sputtered target material, the platinum of chromium containing cobalt boron rhenium layer and its preparation method |
| CN110117775B (en) * | 2018-02-05 | 2021-03-05 | 光洋应用材料科技股份有限公司 | Sputtering target containing cobalt chromium platinum boron rhenium, cobalt chromium platinum boron rhenium layer and preparation method thereof |
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