JPH05137350A - High-tension pulse generating device - Google Patents
High-tension pulse generating deviceInfo
- Publication number
- JPH05137350A JPH05137350A JP30045691A JP30045691A JPH05137350A JP H05137350 A JPH05137350 A JP H05137350A JP 30045691 A JP30045691 A JP 30045691A JP 30045691 A JP30045691 A JP 30045691A JP H05137350 A JPH05137350 A JP H05137350A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- current
- semiconductor switch
- high voltage
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Control Of Voltage And Current In General (AREA)
- Generation Of Surge Voltage And Current (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は高効率で高い繰返し周波
数を有する立上がりの速い高電圧を発生する装置に係
り、特に半導体スイッチを複数個直列接続し、半導体ス
イッチのタ―ンオンにより高電圧パスを発生する装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for generating a high voltage having a high rising rate and a high repetition rate with a high efficiency, and in particular, a plurality of semiconductor switches are connected in series and a high voltage path is provided by turning on the semiconductor switches. And a device for generating.
【０００２】[0002]
【従来の技術】近年、パルス状の大電流を利用してガス
レ―ザの励起を行ったり、パルス磁場を形成したりする
いわゆるパルスパワ―技術に対する産業上の需要が高ま
ってきている。パルス電流を得る方法としては高電圧に
充電されたコンデンサ等の回路をスイッチングする方法
が一般的であり、スイッチング素子としては低圧の水素
ガスなどを封入したサイラトロンが良く使われてきた。
しかしサイラトロンはスイッチングに放電を伴なうた
め、電極の消耗を避けることができず、素子の寿命が短
く高繰返しのパルス発生装置への応用が困難であるとい
う欠点があった、この欠点を解消するため、最近では半
導体素子により、スイッチング動作を行うという試みが
なされている。パルスパワ―用のスイッチには、数十キ
ロボルト、数キロアンペアという高電圧大電流の定格が
要求されるが、現在のところこのような定格を満たす単
独の半導体スイッチは存在せず、耐電圧は高々数キロボ
ルトしかない。このため、複数個の半導体スイッチを直
列に接続する必要が生ずる。ところがこの複数個に接続
された素子の内１個乃至数個になんらかの理由により故
障が生じて短絡状態になったとすると、スイッチ全体に
規定の電圧が印加されたとき故障のない健全な阻止にも
ｎ／（ｎ−ｆ）倍の過電圧が印加されることになり（ｎ
は全体の素子直列数，ｆは故障の生じた阻止の数）、健
全な素子も含めた全ての素子が破壊に至るという欠点が
ある。この問題を解決する方法として、直列接続された
各段の素子の電圧をモニタ―して異常を判定することが
考えられる。2. Description of the Related Art In recent years, there has been an increasing industrial demand for a so-called pulse power technique for exciting a gas laser or forming a pulse magnetic field by utilizing a large pulse current. As a method of obtaining a pulse current, a method of switching a circuit such as a capacitor charged to a high voltage is generally used, and a thyratron filled with low-pressure hydrogen gas or the like has been often used as a switching element.
However, since thyratron involves discharge during switching, the consumption of electrodes cannot be avoided, and the short life of the element makes it difficult to apply it to a pulse generator with high repetition rate. Therefore, recently, an attempt has been made to perform a switching operation by using a semiconductor element. A pulse power switch is required to have a high voltage and high current rating of several tens of kilovolts and several kiloamperes, but at the present time there is no single semiconductor switch that meets such a rating, and the withstand voltage is at most. Only a few kilovolts. Therefore, it becomes necessary to connect a plurality of semiconductor switches in series. However, if one or several of the elements connected to the plurality are broken down for some reason and become short-circuited, when a specified voltage is applied to the entire switch, it is possible to prevent failure without failure. An overvoltage of n / (n−f) times is applied (n
Is the total number of elements connected in series, f is the number of failures that have occurred, and all elements, including sound elements, are destroyed. As a method of solving this problem, it is possible to judge the abnormality by monitoring the voltage of the elements of each stage connected in series.
【０００３】図４はこのような例として、ＭＯＳＦＥＴ
を用いた従来の高電圧パルス発生装置の構成図を示して
いる。コンデンサＣ1 は高圧直流充電装置１０により充
電される。半導体スイッチ装置は、ｍ並列ｎ直列に接続
されたｍ・ｎ個のＦＥＴにより構成されており、各ＦＥ
Ｔは総合制御装置２０からの光信号を受けて動作するゲ
―ト駆動回路ＧＵからのゲ―ト駆動信号によりタ―オン
する。全てのＦＥＴがタ―ンオンすると、コンデンサＣ
1 の電荷が放電してコンデンサＣ2 に移行され放電負荷
３０にエネルギ―が注入されるという基本動作について
は周知の技術であるからここでは詳しく説明しない。こ
の高電圧パルス発生装置においては半導体スイッチの保
護は次のようにして行われる。FIG. 4 shows an example of such a MOSFET.
The block diagram of the conventional high voltage pulse generator which used is shown. The capacitor C1 is charged by the high voltage DC charging device 10. The semiconductor switch device is composed of m · n FETs connected in m parallel n series, and each FE
T is turned on by a gate drive signal from a gate drive circuit GU which operates by receiving an optical signal from the general control unit 20. When all FETs turn on, the capacitor C
Since the basic operation of discharging the electric charge of 1 and transferring it to the capacitor C2 and injecting energy into the discharge load 30 is a well-known technique, it will not be described in detail here. In this high voltage pulse generator, the semiconductor switch is protected as follows.
【０００４】即ち、直列接続されたＦＥＴの各段に並列
に過電圧保護回路４０を接続する。この過電圧保護回路
４０はツェナ―ダイオ―ドと保護用ＦＥＴから成り、ツ
ェナ―ダイオ―ドの定電圧性により、スイッチ素子であ
るＦＥＴを過電圧から保護する。また過電圧を過電圧検
出回路４１が各段に接続され、過電圧を検出してスイッ
チ装置のトリガ―信号を発生する総合制御装置２０に、
異常信号を伝送している。That is, the overvoltage protection circuit 40 is connected in parallel to each stage of the FETs connected in series. The overvoltage protection circuit 40 is composed of a Zener diode and a protection FET, and protects the FET, which is a switching element, from overvoltage by the constant voltage property of the Zener diode. In addition, an overvoltage detection circuit 41 is connected to each stage for overvoltage, and a general control device 20 that detects the overvoltage and generates a trigger signal for the switch device,
An abnormal signal is being transmitted.
【０００５】[0005]
【発明が解決しようとする課題】このような従来の高電
圧パルス発生装置においては、直列接続された半導体ス
イッチを過電圧から保護することはできるものの次のよ
うな欠点を有している。即ち、過電圧から半導体スイッ
チを保護する過電圧保護回路と、過電圧を検出して装置
の運転停止を行う過電圧検出回路が各段にそれぞれ接続
されているため、過電圧検出回路の接続が複雑なること
である。The conventional high voltage pulse generator as described above has the following drawbacks although it is possible to protect the semiconductor switches connected in series from overvoltage. That is, since an overvoltage protection circuit for protecting the semiconductor switch from the overvoltage and an overvoltage detection circuit for detecting the overvoltage and stopping the operation of the apparatus are connected to each stage, the connection of the overvoltage detection circuit becomes complicated. ..
【０００６】本発明は以上のような従来の高電圧パルス
発生装置の欠点を除去するためになされたもので、半導
体スイッチに過電圧が加わったことを容易に検出でき、
半導体スイッチ装置を過電圧から保護し、装置の運転停
止などの保護手段を講じることのできる高電圧パルス発
生装置を提供することを目的とする。The present invention has been made to eliminate the above-mentioned drawbacks of the conventional high voltage pulse generator, and it is possible to easily detect that an overvoltage is applied to the semiconductor switch.
It is an object of the present invention to provide a high voltage pulse generator capable of protecting a semiconductor switch device from overvoltage and taking protective measures such as operation stop of the device.
【０００７】[0007]
【課題を解決するための手段】本発明は前記目的を達成
するために、複数の半導体スイッチ並列に保護用半導体
スイッチを接続し、この保護用半導体スイッチのアノ―
ド端子とゲ―ト端子の間に非線形抵抗を接続し、前記保
護用半導体スイッチのカソ―ド端子にパルス電流検出装
置が配置された過電圧保護回路と、前記パルス電流検出
装置から検出された電流により前記高電圧直流充電装置
及び前記総合制御装置に停止信号を送信する異常検出装
置を備えたことを特徴とするものである。In order to achieve the above-mentioned object, the present invention connects a plurality of semiconductor switches in parallel with a protective semiconductor switch, and an anode of the protective semiconductor switch is provided.
A non-linear resistance is connected between the gate terminal and the gate terminal, and an overvoltage protection circuit in which a pulse current detection device is arranged at the cathode terminal of the protection semiconductor switch, and a current detected from the pulse current detection device. According to the above, an abnormality detection device for transmitting a stop signal to the high voltage DC charging device and the integrated control device is provided.
【０００８】[0008]
【作用】前述のように構成することにより、半導体スイ
ッチに過電圧が印加された場合には非線形抵抗の抵抗値
が変化して半導体スイッチにかかる電圧を制限し、非線
形抵抗に流れる電流が保護用の半導体スイッチのゲ―ト
に流入するために保護用半導体スイッチが自動的にタ―
ンオンして分担電圧を零にするので、主回路の半導体ス
イッチは過電圧から保護される。又、パルス電流検出装
置により電流を検出し異常検出装置に送信される。異常
が検出されると異常検出装置は直に高電圧直流充電装置
及び前記総合制御装置に停止信号を送信し装置の運転を
停止する。With the configuration described above, when an overvoltage is applied to the semiconductor switch, the resistance value of the non-linear resistance changes to limit the voltage applied to the semiconductor switch, and the current flowing in the non-linear resistance is used for protection. The semiconductor switch for protection automatically turns on in order to flow into the gate of the semiconductor switch.
Since the shared voltage is turned on to zero the shared voltage, the semiconductor switch of the main circuit is protected from overvoltage. Further, the current is detected by the pulse current detection device and transmitted to the abnormality detection device. When an abnormality is detected, the abnormality detection device immediately sends a stop signal to the high voltage DC charging device and the integrated control device to stop the operation of the device.
【０００９】[0009]
【実施例】以下、本発明の一実施例を、従来のものと同
一部には同一符号を付して示す、図１を参照して説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. 1, in which the same parts as those of the conventional one are designated by the same reference numerals.
【００１０】本発明は、図１に示すように、半導体スイ
ッチ装置は、電力用サイリスタＴｈｙをｎ個直列接続し
て構成され、各サイリスタと並列に保護用のＦＥＴが接
続される。保護用ＦＥＴのアノ―ドとゲ―ト間にはアバ
ランシェダイオ―ドＤが接続される。アバランシェダイ
オ―ドＤのブレ―クダウン電圧はサイリスタの定常アノ
―ド・カソ―ド間電圧より高く、サイリスタの許容電圧
よりも低い値とする。又、保護用ＦＥＴのカソ―ド端子
とゲ―ト端子の間には抵抗Ｒが接続され、保護用ＦＥＴ
のカソ―ド端子には変流器ＣＴが配置される。変流器Ｃ
Ｔの出力は以上検出装置５０に導かれる。In the present invention, as shown in FIG. 1, a semiconductor switch device is constituted by connecting n power thyristors Thy in series, and a protection FET is connected in parallel with each thyristor. An avalanche diode D is connected between the gate and the gate of the protection FET. The breakdown voltage of the avalanche diode D is higher than the steady voltage between the anode and cathode of the thyristor and lower than the allowable voltage of the thyristor. Further, a resistor R is connected between the cathode terminal and the gate terminal of the protection FET, and the protection FET is
A current transformer CT is arranged at the cathode terminal of the. Current transformer C
The output of T is guided to the detection device 50 as described above.
【００１１】各段の変流器ＣＴの出力は、異常検出装置
５０内部の比較回路５１に入り、予め設定された値より
入力値が大きい場合以上と判定し“１”を、入力値が設
定値以下又は入力が無い場合正常と判定して“０”をＯ
Ｒ回路５２に出力する。ＯＲ回路５２により入力の各段
の内どれかに“１”があった場合、異常検出装置５０非
常停止信号を出力する。異常検出装置５０の出力は高圧
直流充電装置１０並に総合制御装置２０の非常停止入力
信号となる。The output of the current transformer CT of each stage enters the comparison circuit 51 inside the abnormality detection device 50, and when the input value is larger than the preset value, it is judged as above and the input value is set to "1". If it is less than the value or there is no input, it is judged as normal and "0" is set to O.
Output to the R circuit 52. When there is "1" in any of the input stages by the OR circuit 52, the abnormality detection device 50 outputs an emergency stop signal. The output of the abnormality detection device 50 serves as an emergency stop input signal for the high voltage DC charging device 10 as well as for the general control device 20.
【００１２】次に前述の構成から成る本発明の動作を説
明する。今、なんらかの原因により直列接続されたサイ
リスタの内１素子乃至複数の素子に故障が発生して短絡
状態に至り、残りの健全な素子に過電圧が印加されたと
する。前記過電圧の値が並列に接続されたアバランシェ
ダイオ―ドＤのブレ―ダウン電圧を超えるとアバランシ
ェダイオ―ドＤは降伏領域に入る。アバランシェダイオ
―ドＤの代表的な電圧電流特性を図２に示す。電圧がブ
レ―ダウン電圧より大きくなるとアバランシェダイオ―
ドＤは降伏領域に入り、抵抗値が激減し大きな電流が流
れてる。この電流は、健全なサイリスタに並列接続され
た保護用ＦＥＴのゲ―トに流れ込み、ＦＥＴはタ―ンオ
ンするので健全なサイリスタの分担電圧は零になり過電
圧から保護される。一方、アバランシェダイオ―ドＤの
降伏電流は変流器ＣＴによって検出されるため、それを
受ける異常検出装置５０は直ちに高圧直流充電装置１０
並に総合制御装置２０に非常停止信号を発信し、装置の
運転を停止する。Next, the operation of the present invention having the above configuration will be described. Now, it is assumed that a failure occurs in one or more elements of the thyristors connected in series for some reason and a short circuit is caused, and an overvoltage is applied to the remaining healthy elements. When the value of the overvoltage exceeds the breakdown voltage of the avalanche diode D connected in parallel, the avalanche diode D enters the breakdown region. A typical voltage-current characteristic of the avalanche diode D is shown in FIG. Avalanche diode when the voltage becomes higher than the breakdown voltage
Do D enters the breakdown region, the resistance value is drastically reduced, and a large current flows. This current flows into the gate of the protection FET connected in parallel to the sound thyristor, and the FET turns on, so that the shared voltage of the sound thyristor becomes zero, and it is protected from overvoltage. On the other hand, since the breakdown current of the avalanche diode D is detected by the current transformer CT, the abnormality detection device 50 that receives the breakdown current immediately receives the high voltage DC charging device 10.
At the same time, an emergency stop signal is sent to the integrated control device 20 to stop the operation of the device.
【００１３】前記実施例においては、保護用の半導体ス
イッチとしてＦＥＴを使用した場合について説明した
が、サイリスタ等の他の半導体スイッチを用いても何等
問題はない。又、非線形抵抗としてアバランシェダイオ
―ドを例にとって説明したが、図３に示したような特性
を持つシリコンブレ―クオ―バ―ダイオ―ドを用いた場
合でも本発明の作用に何等変りはない。シリコンブレ―
クオ―バ―ダイオ―ドでは、端子間電圧がブレ―クオ―
バ―電圧（ＢＯＶ）を超えると非線形領域に移行し、電
流が急増する。このため、アバランシェダイオ―ドを用
いた場合と同等の効果を得ることができる。In the above embodiment, the case where the FET is used as the protection semiconductor switch has been described, but there is no problem even if another semiconductor switch such as a thyristor is used. Although the avalanche diode has been described as an example of the non-linear resistance, the operation of the present invention does not change even when a silicon breaker diode having the characteristics shown in FIG. 3 is used. .. Silicon bra
In the quadr diode, the voltage between terminals is broken
When the voltage exceeds the bar voltage (BOV), it shifts to a non-linear region and the current sharply increases. Therefore, it is possible to obtain the same effect as when the avalanche diode is used.
【００１４】[0014]
【発明の効果】以上説明したように本発明によれば半導
体スイッチ過電圧が加わったことを、容易に検出でき、
半導体スイッチ装置を過電圧から保護し、装置の停止な
どの保護手段を講じることのできる高電圧パルス発生装
置を提供することができる。As described above, according to the present invention, it is possible to easily detect that a semiconductor switch overvoltage is applied,
It is possible to provide a high-voltage pulse generator capable of protecting the semiconductor switch device from overvoltage and taking protective measures such as stopping the device.
【図１】本発明の一実施例を示す高電圧パルス発生装置
の構成図。FIG. 1 is a block diagram of a high voltage pulse generator showing an embodiment of the present invention.
【図２】アバランシェダイオ―ドの動作特性図。FIG. 2 is an operating characteristic diagram of an avalanche diode.
【図３】シリコンブレ―クオ―バ―ダイオ―ドの動作特
性図。FIG. 3 is an operating characteristic diagram of a silicon breakover diode.
【図４】従来の高電圧パルス発生装置の構成図。FIG. 4 is a configuration diagram of a conventional high voltage pulse generator.
１０…高圧直流充電電源 ２０…総合制御
装置 ３０…放電負荷 ５０…異常検出
装置 ５１…比較回路 ５２…ＯＲ回路 Ｄ …アバランシェダイオ―ド ＦＥＴ…保護用ト
ランジスタ Ｒ …抵抗 Ｔｈｙ…サイリス
タ ＣＴ…変流器 ＧＵ…ゲ―トユ
ニット10 ... High-voltage DC charging power source 20 ... Overall control device 30 ... Discharge load 50 ... Abnormality detection device 51 ... Comparison circuit 52 ... OR circuit D ... Avalanche diode FET ... Protective transistor R ... Resistor Thy ... Thyristor CT ... Current transformer GU ... gate unit
Claims (1)
て成る半導体スイッチ装置と、前記半導体スイッチを駆
動するゲ―ト駆動回路と、このゲ―ト駆動回路に制御信
号を送信する総合制御装置と、前記半導体スイッチ装置
を高電圧に充電する高電圧直流充電装置を備えた高電圧
パルス発生装置において、前記複数の半導体スイッチ並
列に保護用半導体スイッチが接続され、この保護用半導
体スイッチのアノ―ド端子とゲ―ト端子の間に非線形抵
抗が接続され、前記保護用半導体スイッチのカソ―ド端
子にパルス電流検出装置が配置された過電圧保護回路と
前記パルス電流検出装置から検出された電流により前記
高電圧直流充電装置及び前記総合制御装置に停止信号を
送信する異常検出装置を備えたことを特徴とする高電圧
パルス発生装置。1. A semiconductor switch device comprising a plurality of semiconductor switches connected in series, a gate drive circuit for driving the semiconductor switch, and a general control device for transmitting a control signal to the gate drive circuit. In a high voltage pulse generator equipped with a high voltage direct current charging device for charging the semiconductor switch device to a high voltage, a protection semiconductor switch is connected in parallel to the plurality of semiconductor switches, and an anode terminal of the protection semiconductor switch is connected. A non-linear resistance is connected between the gate terminal and the gate terminal, and a pulse current detection device is arranged at the cathode terminal of the protective semiconductor switch, and the high voltage is detected by the current detected by the pulse current detection device. A high voltage pulse generator comprising a voltage DC charging device and an abnormality detection device for transmitting a stop signal to the integrated control device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30045691A JPH05137350A (en) | 1991-11-15 | 1991-11-15 | High-tension pulse generating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30045691A JPH05137350A (en) | 1991-11-15 | 1991-11-15 | High-tension pulse generating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05137350A true JPH05137350A (en) | 1993-06-01 |
Family
ID=17885015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30045691A Pending JPH05137350A (en) | 1991-11-15 | 1991-11-15 | High-tension pulse generating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05137350A (en) |
-
1991
- 1991-11-15 JP JP30045691A patent/JPH05137350A/en active Pending
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