JPH05103486A - High voltage pulse generator - Google Patents
High voltage pulse generatorInfo
- Publication number
- JPH05103486A JPH05103486A JP25616791A JP25616791A JPH05103486A JP H05103486 A JPH05103486 A JP H05103486A JP 25616791 A JP25616791 A JP 25616791A JP 25616791 A JP25616791 A JP 25616791A JP H05103486 A JPH05103486 A JP H05103486A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- semiconductor switch
- high voltage
- overvoltage
- pulse generator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Generation Of Surge Voltage And Current (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は高効率で高い繰返し周波
数を有する立上がりの速い高電圧を発生する装置に係
り、特に半導体スイッチを複数個直列接続し、半導体ス
イッチのタ―ンオンにより高電圧を発生する高電圧パス
発生装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device for generating a high voltage having a high rise rate and a high repetition rate, which has a high repetition rate. The present invention relates to a high voltage path generator that generates a high voltage path.
【０００２】[0002]
【従来の技術】近年、パルス状の大電流を利用してガス
レ―ザの励起を行ったり、パルス磁場を形成したりする
いわゆるパルスパワ―技術に対する産業上の需要が高ま
ってきている。パルス電流を得る方法としては高電圧に
充電されたコンデンサ等の回路をスイッチングする方法
が一般的であり、スイッチング素子としては低圧の水素
ガスなどを封入したサイラトロンが良く使われてきた。
しかしサイラトロンはスイッチングに放電を伴なうた
め、電極の消耗を避けることができず、素子の寿命が短
く高繰返しのパルス発生装置への応用が困難であるとい
う欠点があった、この欠点を解消するため、最近では半
導体素子により、スイッチング動作を行うという試みが
なされている。パルスパワ―用のスイッチには、数十キ
ロボルト、数キロアンペアという高電圧大電流の定格が
要求されるが、現在のところ、このような定格を満す単
独の半導体スイッチは存在せず、耐電圧は高々数キロボ
ルトでしかない。このため、複数個の半導体スイッチを
直列に接続する必要が生ずる。ところが、この複数個に
接続された素子の内１個乃至数個になんらかの理由によ
り故障が生じて短絡状態になったとすると、スイッチ全
体に規定の電圧が印加されたとき故障のない健全な阻止
にもｎ／（ｎ−１）倍の過電圧が印加されることになり
（ｎは全体の素子直列数）、健全な素子も含めた全ての
素子が破壊に至るという欠点がある。これを解消する方
法として直列接続された各段の素子の電圧をモニタ―し
て異常を判定することが考えられる。2. Description of the Related Art In recent years, there has been an increasing industrial demand for a so-called pulse power technique for exciting a gas laser or forming a pulse magnetic field by utilizing a large pulse current. As a method of obtaining a pulse current, a method of switching a circuit such as a capacitor charged to a high voltage is generally used, and a thyratron filled with low-pressure hydrogen gas or the like has been often used as a switching element.
However, since thyratron involves discharge during switching, the consumption of electrodes cannot be avoided, and the short life of the element makes it difficult to apply it to a pulse generator with high repetition rate. Therefore, recently, an attempt has been made to perform a switching operation by using a semiconductor element. The pulse power switch is required to have a high voltage and high current rating of several tens of kilovolts and several kiloamperes, but at present, there is no single semiconductor switch that satisfies this rating, and the withstand voltage is high. Is no more than a few kilovolts. Therefore, it becomes necessary to connect a plurality of semiconductor switches in series. However, if a failure occurs in one or several of the elements connected to the plurality for some reason, and a short circuit occurs, it is possible to prevent failure without failure when a specified voltage is applied to the entire switch. Also, an overvoltage of n / (n-1) times is applied (n is the total number of elements in series), and there is a disadvantage that all elements including sound elements are destroyed. As a method of eliminating this, it is possible to judge the abnormality by monitoring the voltage of the elements of each stage connected in series.
【０００３】図４はこのような例としてＭＯＳＦＥＴを
用いた従来の高電圧パルス発生装置の構成図を示してい
る。コンデンサＣ1 は直流電源１０により充電される。
半導体スイッチ装置はｍ並列ｎ直列に接続されたｍ・ｎ
個のＦＥＴにより構成されおり、各ＦＥＴは制御信号送
信装置２０からの光信号を受けて動作するゲ―トFIG. 4 shows a block diagram of a conventional high voltage pulse generator using a MOSFET as such an example. The capacitor C1 is charged by the DC power supply 10.
The semiconductor switch device has m · n connected in m parallel n series.
The gate is composed of individual FETs, and each FET operates by receiving an optical signal from the control signal transmitter 20.
【０００４】駆動回路ＧＵからのゲート駆動信号により
ターンオンする。全てのＦＥＴがタ―ンオンすると、コ
ンデンサＣ1 の電荷が放電してコンデンサＣ2 に移行
し、放電負荷３０にエネルギーガ注入されるという基本
動作については周知の技術であるからここでは詳しく説
明しない。この高電圧パルス発生装置においては半導体
スイッチの保護は次のようにして行われる。即ち、直列
接続されたＦＥＴの各段に並列に過電圧保護回路４０を
接続する。この過電圧保護回路４０はツェナ―ダイオ―
ドと保護用ＦＥＴから成り、ツェナ―ダイオ―ドの定電
圧性により、スイッチ素子であるＦＥＴを過電圧から保
護する。また過電圧検出回路４１が各段の過電圧を検出
してスイッチのトリガ―信号を発生する制御信号送信装
置２０に異常信号を伝送している。It is turned on by a gate drive signal from the drive circuit GU. When all the FETs are turned on, the electric charge of the capacitor C1 is discharged to be transferred to the capacitor C2, and the basic operation of injecting energy into the discharge load 30 is a well-known technique and will not be described in detail here. In this high voltage pulse generator, the semiconductor switch is protected as follows. That is, the overvoltage protection circuit 40 is connected in parallel to each stage of the FETs connected in series. This overvoltage protection circuit 40 is a Zener diode.
It is composed of a protection FET and a protection FET, and protects the FET, which is a switching element, from overvoltage by the constant voltage property of the Zener diode. Further, the overvoltage detection circuit 41 transmits an abnormal signal to the control signal transmission device 20 which detects the overvoltage of each stage and generates the switch trigger signal.
【０００５】[0005]
【発明が解決しようとする課題】このような従来の高電
圧パルス発生装置においては、直列接続された半導体ス
イッチを過電圧から保護することはできるものの次のよ
うな欠点を有していた。即ち、過電圧から半導体スイッ
チを保護する過電圧保護回路と、過電圧を検出して装置
の運転停止を行う過電圧検出回路が各段にそれぞれ接続
されているため過電圧検出回路の接続が複雑になる。In such a conventional high voltage pulse generator, the semiconductor switches connected in series can be protected from overvoltage, but they have the following drawbacks. That is, since an overvoltage protection circuit for protecting the semiconductor switch from the overvoltage and an overvoltage detection circuit for detecting the overvoltage and stopping the operation of the apparatus are connected to each stage, the connection of the overvoltage detection circuit becomes complicated.
【０００６】本発明は以上のような従来の高電圧パルス
発生装置の欠点を除去するためになされたもので、半導
体スイッチ過電圧が加わったことを、容易に検出でき、
半導体スイッチ装置を過電圧から保護し、装置の停止な
どの保護手段を講じることのできる高電圧パルス発生装
置を提供することを目的とする。The present invention has been made in order to eliminate the above-mentioned drawbacks of the conventional high voltage pulse generator, and it is possible to easily detect that the semiconductor switch overvoltage is applied.
An object of the present invention is to provide a high voltage pulse generator capable of protecting a semiconductor switch device from overvoltage and taking protective measures such as stopping of the device.
【０００７】[0007]
【課題を解決するための手段】本発明は前記目的を達成
するために、複数個の半導体スイッチの各々のアノ―ド
端子とゲ―ト端子の間に非線形抵抗と発光素子を直列接
続した過電圧保護回路と、前記発光素子の光信号を検出
して前記高電圧直流充電装置及び前記制御信号発信装置
に停止信号を送信する異常検出装置を具備したものであ
る。In order to achieve the above object, the present invention provides an overvoltage in which a non-linear resistance and a light emitting element are connected in series between the anode terminal and the gate terminal of each of a plurality of semiconductor switches. A protection circuit and an abnormality detection device for detecting an optical signal of the light emitting element and transmitting a stop signal to the high voltage DC charging device and the control signal transmission device are provided.
【０００８】[0008]
【作用】前述のように構成することにより、半導体スイ
ッチに過電圧が印加された場合には非線形抵抗の抵抗値
が変化して半導体スイッチにかかる電圧を制限し、非線
形抵抗に流れる電流が半導体スイッチのゲ―トに流入す
るために半導体スイッチが自動的にタ―ンオンして分担
電圧を零にするので過電圧から保護される。又発光素子
に電流が流れるため光信号が異常検出装置に送信され
る。異常が検出されると異常検出装置は直に高圧直流充
電装置及びに制御信号送信装置に停止信号を発信し、装
置の運転を停止する。With the configuration described above, when an overvoltage is applied to the semiconductor switch, the resistance value of the non-linear resistance changes and the voltage applied to the semiconductor switch is limited, and the current flowing in the non-linear resistance is The semiconductor switch is turned on automatically to flow into the gate, and the shared voltage is set to zero, so that it is protected from overvoltage. Further, since a current flows through the light emitting element, an optical signal is transmitted to the abnormality detecting device. When an abnormality is detected, the abnormality detecting device immediately sends a stop signal to the high voltage DC charging device and the control signal transmitting device to stop the operation of the device.
【０００９】[0009]
【実施例】以下、本発明の一実施例を、従来のものと同
一部には同一符号を付して示す、図１を参照して説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. 1, in which the same parts as those of the conventional one are designated by the same reference numerals.
【００１０】本発明は、図１に示すように、半導体スイ
ッチ装置は、電力用サイリスタＴｈｙをｎ個直列接続し
て構成され、各々のサイリスタのアノ―ド端子とゲ―ト
端子間には抵抗Ｒ１とダイオ―ドＤ１とシリコンブレ―
クオ―バダイオ―ドＢＯＤと発光素子ＬＥＤとツェナー
ダイオードＤ４とダイオードＤ３が接続される。シリコ
ンブレ―クオ―バダイオ―ドＢＯＤのブレ―クオ―バ電
圧はサイリスタの定常アノ―ドカソ―ド間電圧より高く
サイリスタの許容電圧よりも低い値とする。According to the present invention, as shown in FIG. 1, a semiconductor switch device is constituted by connecting n power thyristors Thy in series, and a resistor is provided between the anode terminal and the gate terminal of each thyristor. R1 and diode D1 and silicon blade
The quad diode BOD, the light emitting element LED, the Zener diode D4 and the diode D3 are connected. The breakover voltage of the silicon breakover diode BOD is higher than the steady voltage between the anode and cathode of the thyristor and lower than the allowable voltage of the thyristor.
【００１１】又、発光素子ＬＥＤのカソード端子とサイ
リスタＴｈｙのカソード端子間には抵抗Ｒ２とコンデン
サＣ２が並列に接続され、サイリスタＴｈｙのアノード
端子とカソード端子には抵抗Ｒ３とコンデンサＣ３が接
続される。発光素子ＬＥＤの光出力は光ファイバーケー
ブルＬＧにより異常検出装置５０に導かれる。異常検出
装置５０内部において、各段の発光素子ＬＥＤからの光
信号は光／電変換器５１によりそれぞれ電気信号に変換
された後ＯＲ回路５２に入力される。ＯＲ回路５２の出
力が異常検出装置５０の出力となる。異常検出装置５０
の出力が高圧直流充電装置１０及び制御信号送信装置２
０の非常停止信号となる。A resistor R2 and a capacitor C2 are connected in parallel between the cathode terminal of the light emitting element LED and the cathode terminal of the thyristor Thy, and a resistor R3 and a capacitor C3 are connected to the anode terminal and the cathode terminal of the thyristor Thy. .. The optical output of the light emitting element LED is guided to the abnormality detection device 50 by the optical fiber cable LG. In the inside of the abnormality detection device 50, the optical signals from the light emitting elements LED of each stage are converted into electric signals by the photoelectric converters 51 and then input to the OR circuit 52. The output of the OR circuit 52 becomes the output of the abnormality detection device 50. Anomaly detection device 50
Output is high-voltage DC charger 10 and control signal transmitter 2
It becomes a 0 emergency stop signal.
【００１２】次に前述の構成から成る本発明の動作を説
明する。今、なんらかの原因により直列接続されたサイ
リスタの内１素子乃至複数の素子に故障が発生して短絡
状態に至り、残りの健全な素子に過電圧が印加されたと
する。前記過電圧の値が並列に接続されたシリコンブレ
―クオ―バダイオ―ド（以下単にＢＯＤと記す）のブレ
―クオ―バ―電圧（以下ＢＯＶと記す）を超えるとＢＯ
Ｄは非線形領域にはいる。ＢＯＤの代表的な電圧電流特
性を図２に示す。電圧がＢＯＶより大きくなるとＢＯＤ
は降伏領域に入り、抵抗値が激減し大きな電流が流れ
る。この電流は健全なサイリスタのゲ―トに流れ込むた
めサイリスタはタ―ンオンする。Next, the operation of the present invention having the above configuration will be described. Now, it is assumed that a failure occurs in one or more elements of the thyristors connected in series for some reason and a short circuit is caused, and an overvoltage is applied to the remaining healthy elements. When the value of the overvoltage exceeds the breakover voltage (hereinafter referred to as BOV) of a silicon breakover diode (hereinafter simply referred to as BOD) connected in parallel, BO
D is in the nonlinear region. A typical voltage-current characteristic of BOD is shown in FIG. BOD when the voltage becomes larger than BOV
Enters the breakdown region, the resistance value decreases sharply, and a large current flows. This current flows into the gate of a healthy thyristor, which turns it on.
【００１３】このように過電圧が印加された健全なサイ
リスタが自分自身がタ―ンオンして保護される。一方、
ＢＯＤの降伏電流は発光素子ＬＥＤに流れるため光信号
が光ファイバーケーブルＬＧを党して異常検出装置５０
に送信される。異常が検出されると異常検出装置５０は
直に高圧直流充電装置１０及び制御信号送信装置２０に
停止信号を発信し、装置の運転を停止する。In this way, the sound thyristor to which the overvoltage is applied is protected by turning on itself. on the other hand,
Since the breakdown current of BOD flows through the light emitting element LED, the optical signal is transmitted through the optical fiber cable LG and the abnormality detection device 50
Sent to. When an abnormality is detected, the abnormality detection device 50 immediately sends a stop signal to the high voltage DC charging device 10 and the control signal transmission device 20 to stop the operation of the device.
【００１４】以上、図１の実施例において、半導体スイ
ッチのゲ―トアノ―ド間に接続する非線形抵抗としてサ
イリスタ特性を持つシリコンブレ―クオ―バダイオ―ド
を使用した場合について説明したが、これは例えばアバ
ランシェ特性を持つダイオ―ドでも何等問題は無い。ア
バランシェ特性を持つダイオ―ドの電圧―電流特性は図
３に示されている。アバランシェダイオ―ドではダイオ
―ドの逆電圧がアバランシェ電圧ＶＡを超えると非線形
領域に入り電流が急増する。このためシリコンブレ―ク
オ―バダイオ―ドと同様に並列接続されたサイリスタの
ゲ―トに電流を流しタ―ンオンさせる。その他の働きは
全く同じであるので省略する。As described above, in the embodiment of FIG. 1, the case where the silicon breaker diode having the thyristor characteristic is used as the nonlinear resistance connected between the gate nodes of the semiconductor switch has been described. For example, a diode with avalanche characteristics will not cause any problems. The voltage-current characteristic of the diode having the avalanche characteristic is shown in FIG. In the avalanche diode, when the reverse voltage of the diode exceeds the avalanche voltage VA, the current enters a non-linear region and the current rapidly increases. Therefore, like the silicon breakover diode, a current is passed through the gate of the thyristor connected in parallel to turn it on. The other functions are exactly the same and will not be described.
【００１５】[0015]
【発明の効果】以上説明したように本発明によれば半導
体スイッチ過電圧が加わったことを、容易に検出でき、
半導体スイッチ装置を過電圧から保護し、装置の停止な
どの保護手段を講じることのできる高電圧パルス発生装
置を提供することができる。As described above, according to the present invention, it is possible to easily detect that a semiconductor switch overvoltage is applied,
It is possible to provide a high-voltage pulse generator capable of protecting the semiconductor switch device from overvoltage and taking protective measures such as stopping the device.
【図１】本発明の一実施例を示す高電圧パルス発生装置
の構成図。FIG. 1 is a block diagram of a high voltage pulse generator showing an embodiment of the present invention.
【図２】シリコンブレ―クオ―バダイオ―ドの動作特性
図。FIG. 2 is an operating characteristic diagram of a silicon breakover diode.
【図３】アバランシェダイオ―ドの動作特性図。FIG. 3 is an operating characteristic diagram of the avalanche diode.
【図４】従来の高電圧パルス発生装置の構成図。FIG. 4 is a configuration diagram of a conventional high voltage pulse generator.
１０…高圧直流充電電源 ２０…制御
信号送信装置 ３０…放電負荷 ５０…故障検出
装置10 ... High-voltage DC charging power source 20 ... Control signal transmission device 30 ... Discharge load 50 ... Failure detection device
Claims (1)
て成る半導体スイッチ装置と、前記半導体スイッチを駆
動するゲ―ト駆動回路と、このゲ―ト駆動回路に制御信
号を送信する制御信号送信装置と、前記半導体スイッチ
装置を高電圧に充電する高電圧直流充電装置とを備えた
高電圧パルス発生装置において、前記複数の半導体スイ
ッチの各々のアノ―ド端子とゲ―ト端子の間に非線形抵
抗と発光素子が直列に接続さた過電圧保護回路と、前記
発光素子の光信号を検出して前記高圧直流充電装置及び
前記制御信号送信装置に停止信号を送信する異常検出装
置を備えたことを特徴とする高電圧パルス発生装置。1. A semiconductor switch device comprising a plurality of semiconductor switches connected in series, a gate drive circuit for driving the semiconductor switch, and a control signal transmission device for transmitting a control signal to the gate drive circuit. A high-voltage pulse generator including a high-voltage direct current charging device for charging the semiconductor switch device to a high voltage, wherein a non-linear resistance is provided between an anode terminal and a gate terminal of each of the plurality of semiconductor switches. An overvoltage protection circuit in which light emitting elements are connected in series, and an abnormality detection device that detects an optical signal of the light emitting element and transmits a stop signal to the high voltage DC charging device and the control signal transmission device, High voltage pulse generator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25616791A JPH05103486A (en) | 1991-10-03 | 1991-10-03 | High voltage pulse generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25616791A JPH05103486A (en) | 1991-10-03 | 1991-10-03 | High voltage pulse generator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05103486A true JPH05103486A (en) | 1993-04-23 |
Family
ID=17288839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25616791A Pending JPH05103486A (en) | 1991-10-03 | 1991-10-03 | High voltage pulse generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05103486A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007097261A (en) * | 2005-09-27 | 2007-04-12 | Toshiba Mitsubishi-Electric Industrial System Corp | Serial semiconductor switch device |
| US20140035655A1 (en) | 2011-10-14 | 2014-02-06 | Silicon Power Corporation | Matrix-stages solid state ultrafast switch |
-
1991
- 1991-10-03 JP JP25616791A patent/JPH05103486A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007097261A (en) * | 2005-09-27 | 2007-04-12 | Toshiba Mitsubishi-Electric Industrial System Corp | Serial semiconductor switch device |
| JP4700460B2 (en) * | 2005-09-27 | 2011-06-15 | 東芝三菱電機産業システム株式会社 | Series semiconductor switch device |
| US20140035655A1 (en) | 2011-10-14 | 2014-02-06 | Silicon Power Corporation | Matrix-stages solid state ultrafast switch |
| EP2582047A3 (en) * | 2011-10-14 | 2014-02-19 | Silicon Power Corporation | Matrix-stages solid state ultrafast switch |
| US8970286B2 (en) | 2011-10-14 | 2015-03-03 | Silicon Power Corporation | Matrix-stages solid state ultrafast switch |
| US9543932B2 (en) | 2011-10-14 | 2017-01-10 | Silicon Power Corporation | Matrix stages solid state ultrafast switch |
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