JPH0512863B2 - - Google Patents

Info

Publication number: JPH0512863B2
Authority: JP; Japan
Prior art keywords: conductivity type; semiconductor layer; layer; semiconductor; thickness
Prior art date: 1981-11-06
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP56177201A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5879752A (ja

Inventor

Mitsuzo Sakamoto

Tomoyuki Watabe

Takahiro Okabe

Minoru Nagata

Tooru Nakamura

Akira Muramatsu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-11-06

Filing date

1981-11-06

Publication date

1993-02-19

1981-11-06 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1981-11-06 Priority to JP56177201A priority Critical patent/JPS5879752A/ja

1983-05-13 Publication of JPS5879752A publication Critical patent/JPS5879752A/ja

1993-02-19 Publication of JPH0512863B2 publication Critical patent/JPH0512863B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 claims description 58
238000002955 isolation Methods 0.000 claims description 38
238000005530 etching Methods 0.000 claims description 15
238000000034 method Methods 0.000 claims description 14
239000000758 substrate Substances 0.000 claims description 13
238000004519 manufacturing process Methods 0.000 claims description 11
239000011810 insulating material Substances 0.000 claims 4
239000004020 conductor Substances 0.000 claims 1
239000012535 impurity Substances 0.000 description 39
229910052814 silicon oxide Inorganic materials 0.000 description 19
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
238000009792 diffusion process Methods 0.000 description 12
238000005468 ion implantation Methods 0.000 description 8
230000003647 oxidation Effects 0.000 description 5
238000007254 oxidation reaction Methods 0.000 description 5
230000000694 effects Effects 0.000 description 4
229920002120 photoresistant polymer Polymers 0.000 description 4
LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
229910052782 aluminium Inorganic materials 0.000 description 2
229910052787 antimony Inorganic materials 0.000 description 2
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
229910052796 boron Inorganic materials 0.000 description 2
230000008021 deposition Effects 0.000 description 2
238000010586 diagram Methods 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
230000003071 parasitic effect Effects 0.000 description 2
229910052698 phosphorus Inorganic materials 0.000 description 2
239000011574 phosphorus Substances 0.000 description 2
-1 PSG Chemical class 0.000 description 1
239000004642 Polyimide Substances 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
230000003321 amplification Effects 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
239000000969 carrier Substances 0.000 description 1
239000002131 composite material Substances 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
230000010354 integration Effects 0.000 description 1
238000005304 joining Methods 0.000 description 1
238000003199 nucleic acid amplification method Methods 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
238000002161 passivation Methods 0.000 description 1
238000000059 patterning Methods 0.000 description 1
229920001721 polyimide Polymers 0.000 description 1
239000011347 resin Substances 0.000 description 1
229920005989 resin Polymers 0.000 description 1
238000000926 separation method Methods 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
230000008719 thickening Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Bipolar Transistors (AREA)
Element Separation (AREA)
Bipolar Integrated Circuits (AREA)

JP56177201A 1981-11-06 1981-11-06 半導体装置の製造方法 Granted JPS5879752A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP56177201A JPS5879752A (ja)	1981-11-06	1981-11-06	半導体装置の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP56177201A JPS5879752A (ja)	1981-11-06	1981-11-06	半導体装置の製造方法

Publications (2)

Publication Number	Publication Date
JPS5879752A JPS5879752A (ja)	1983-05-13
JPH0512863B2 true JPH0512863B2 (ko)	1993-02-19

Family

ID=16026938

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP56177201A Granted JPS5879752A (ja)	1981-11-06	1981-11-06	半導体装置の製造方法

Country Status (1)

Country	Link
JP (1)	JPS5879752A (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS60158657A (ja) *	1984-01-29	1985-08-20	Rohm Co Ltd	半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS516488A (ko) *	1974-07-05	1976-01-20	Hitachi Ltd
JPS5456357A (en) *	1977-10-14	1979-05-07	Hitachi Ltd	Production of semiconductor device
JPS5655060A (en) *	1979-10-11	1981-05-15	Fujitsu Ltd	Semiconductor integrated circuit device

1981
- 1981-11-06 JP JP56177201A patent/JPS5879752A/ja active Granted

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS516488A (ko) *	1974-07-05	1976-01-20	Hitachi Ltd
JPS5456357A (en) *	1977-10-14	1979-05-07	Hitachi Ltd	Production of semiconductor device
JPS5655060A (en) *	1979-10-11	1981-05-15	Fujitsu Ltd	Semiconductor integrated circuit device

Also Published As

Publication number	Publication date
JPS5879752A (ja)	1983-05-13

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