JPH05125541A - Plasma treating device - Google Patents
Plasma treating deviceInfo
- Publication number
- JPH05125541A JPH05125541A JP3293266A JP29326691A JPH05125541A JP H05125541 A JPH05125541 A JP H05125541A JP 3293266 A JP3293266 A JP 3293266A JP 29326691 A JP29326691 A JP 29326691A JP H05125541 A JPH05125541 A JP H05125541A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum container
- frequency electrode
- shield plate
- plasma
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、例えば半導体基板な
どの試料基板にエッチング、ＣＶＤ（Chemical Vapor D
eposition ）などのプラズマ処理を行うプラズマ処理装
置に関し、詳しくは、真空容器内の反応副生成物を除去
するためのクリーニング作業を短時間で容易に行うこと
ができ、装置稼働率を向上させるようにした、プラズマ
処理装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to etching, CVD (Chemical Vapor D) on a sample substrate such as a semiconductor substrate.
For plasma processing equipment that performs plasma processing such as eposition), in detail, it is possible to easily perform cleaning work to remove reaction by-products in the vacuum container in a short time, and to improve equipment availability. And a plasma processing apparatus.
【０００２】[0002]
【従来の技術】真空容器の内部に設けられた高周波電極
に高周波電源から高周波電圧を印加して、真空容器内に
導入された処理ガスをプラズマ化し、このプラズマによ
り高周波電極上に載置された試料基板を例えばエッチン
グするプラズマ処理装置としては、従来、その構成説明
図の図３に示すようなものが知られている。2. Description of the Related Art A high-frequency voltage is applied from a high-frequency power source to a high-frequency electrode provided inside a vacuum container to turn a processing gas introduced into the vacuum container into a plasma, and the plasma is placed on the high-frequency electrode. As a plasma processing apparatus for etching a sample substrate, for example, a plasma processing apparatus shown in FIG.
【０００３】図３において、１は、円筒状の本体1aとそ
の上部を閉じる上蓋1bとからなる真空容器であり、真空
容器１は、接地されており、本体1aに処理ガス導入口２
と処理ガス排気口３とが設けられている。４は、上面に
試料基板Ｗが載置され下部に大径部が形成された、上下
部に段差を有する円柱状をなす高周波電極である。この
高周波電極４が、絶縁体５を介して真空容器１の下端周
縁部に取り付けられて、真空容器１内にこれと電気的に
絶縁された状態で設けられている。また、高周波電極４
には、内部に冷却水を流すための冷却水導入管６と冷却
水排出管７とが接続されている。In FIG. 3, reference numeral 1 is a vacuum container comprising a cylindrical main body 1a and an upper lid 1b closing the upper part thereof. The vacuum container 1 is grounded and a processing gas introduction port 2 is provided in the main body 1a.
And a processing gas exhaust port 3 are provided. Reference numeral 4 denotes a high-frequency electrode having a columnar shape, in which a sample substrate W is placed on the upper surface and a large diameter portion is formed on the lower portion, and which has a step in the upper and lower portions. The high frequency electrode 4 is attached to the lower end peripheral portion of the vacuum container 1 via an insulator 5 and is provided in the vacuum container 1 in a state of being electrically insulated from the vacuum container 1. In addition, the high frequency electrode 4
A cooling water introduction pipe 6 and a cooling water discharge pipe 7 for flowing cooling water inside are connected to the.
【０００４】真空容器１内には、高周波電極４の不必要
な部位での放電を防ぐために、電極シールド板８が、高
周波電極４の側面部を数mm程度の間隔をおいて取り囲む
ように設けられている。電極シールド板８は、円筒状部
材8aと鍔部材8bとからなり、円筒状部材8aの下端周縁部
に外方に突出させて鍔部材8bを固定してなるものであっ
て、その鍔部材8bの周縁部が真空容器１の下部側壁面に
取り付けられている。電極シールド板８は、導電性を有
し、小径の貫通孔が多数穿設された例えばステンレス製
の多孔板を用いて形成されており、いわゆるメッシュ状
のものとされている。なお、メッシュ状としているの
は、電極シールド板８の内側の部分にガス溜まりを生じ
させないようにするためである。In the vacuum container 1, an electrode shield plate 8 is provided so as to surround the side surface of the high-frequency electrode 4 at intervals of several mm in order to prevent discharge at unnecessary portions of the high-frequency electrode 4. Has been. The electrode shield plate 8 is composed of a cylindrical member 8a and a flange member 8b, and the flange member 8b is fixed to the lower end peripheral portion of the cylindrical member 8a by protruding the flange member 8b. Is attached to the lower side wall surface of the vacuum container 1. The electrode shield plate 8 is conductive and is formed by using, for example, a perforated plate made of stainless steel in which a large number of small-diameter through holes are formed, and has a so-called mesh shape. The mesh is used to prevent gas accumulation in the inner portion of the electrode shield plate 8.
【０００５】高周波電極４には、一端側が接地された高
周波電源９がコンデンサ10を介して接続されている。ま
た、真空容器１の上蓋1bの上面側の凹部には、中心部永
久磁石11ａ、外周部永久磁石11ｂ及びヨーク11ｃからな
り、真空容器１内の高周波電極４の上方に半径方向の磁
界を形成するための磁石組立11が配されている。A high frequency power source 9 whose one end is grounded is connected to the high frequency electrode 4 via a capacitor 10. Further, the concave portion on the upper surface side of the upper lid 1b of the vacuum container 1 is composed of a central permanent magnet 11a, an outer peripheral permanent magnet 11b and a yoke 11c, and forms a radial magnetic field above the high frequency electrode 4 inside the vacuum container 1. A magnet assembly 11 is provided for this purpose.
【０００６】上記構成になるプラズマ処理装置おいて、
高周波電極４上に試料基板Ｗを載置した後、真空容器１
内が所定圧力になるように排気しながらCl2 ガス等の処
理ガスを導入し、高周波電極４に高周波電圧を印加する
と、高周波放電が起こり、真空容器１内に導入された処
理ガスがプラズマ化される。このプラズマＰにより高周
波電極４上に載置された試料基板Ｗをエッチングするよ
うにしている。In the plasma processing apparatus having the above structure,
After placing the sample substrate W on the high-frequency electrode 4, the vacuum container 1
When a processing gas such as Cl 2 gas is introduced while evacuating the interior to a predetermined pressure and a high-frequency voltage is applied to the high-frequency electrode 4, a high-frequency discharge occurs and the processing gas introduced into the vacuum container 1 is turned into plasma. To be done. The sample substrate W placed on the high-frequency electrode 4 is etched by the plasma P.
【０００７】[0007]
【発明が解決しようとする課題】上記従来のプラズマ処
理装置では、エッチング処理に伴う反応副生成物が、図
４に示すように、真空容器の内側の側壁面、電極シール
ド板の表面、高周波電極の一部などに付着する。この反
応副生成物は、パーティクルや汚染の原因となり、試料
基板の品質を低下させるものである。このため、一定の
時間間隔をおいて、真空容器のクリーニング作業（清浄
化作業）を行って反応副生成物を除去する必要がある。
ところが、高周波電極と真空容器間の空間が細長く反応
副生成物を除去し難いことから、真空容器内のクリーニ
ング作業に時間がかかり、装置稼働率が低下するという
問題点があった。また、高周波電極は、液体窒素による
低温冷却法の適用も検討されるなど、その形状が複雑に
なる傾向がある。したがって、真空容器内の反応副生成
物の除去を容易に行うことができるようにして、装置稼
働率を高めることが要請されている。In the above-described conventional plasma processing apparatus, reaction by-products associated with the etching process are, as shown in FIG. 4, the inner side wall surface of the vacuum container, the surface of the electrode shield plate, and the high frequency electrode. Attach to a part of the. This reaction by-product causes particles and contamination and deteriorates the quality of the sample substrate. Therefore, it is necessary to remove the reaction by-product by performing a cleaning operation (cleaning operation) of the vacuum container at regular time intervals.
However, since the space between the high-frequency electrode and the vacuum container is long and it is difficult to remove the reaction by-products, there is a problem that cleaning work inside the vacuum container takes time and the operation rate of the apparatus decreases. Further, the high-frequency electrode tends to have a complicated shape, such as application of a low temperature cooling method using liquid nitrogen. Therefore, it is required to increase the operation rate of the apparatus by making it possible to easily remove the reaction by-product in the vacuum container.
【０００８】この発明は、上記従来の問題点を解消する
ためになされたものであって、真空容器内に高周波電極
の側面部および真空容器の内側の側壁面を所定の間隔距
離をおいて取り囲むシールド板を設け、プラズマ処理す
るときには反応副生成物の大部分を上記シールド板に付
着させ、真空容器内のクリーニングを行うときには、プ
ラズマ処理時にシールド板に付着した反応副生成物をク
リーニング用ガスによるプラズマによって容易に除去し
得る構成とすることにより、真空容器内のクリーニング
作業を短時間で容易に行うことができ、装置稼働率を高
めることができる、プラズマ処理装置の提供を目的とす
る。The present invention has been made in order to solve the above-mentioned conventional problems, and surrounds a side surface portion of a high frequency electrode and a side wall surface inside the vacuum container with a predetermined distance in the vacuum container. A shield plate is provided, and most of the reaction by-products are attached to the shield plate during plasma processing, and when cleaning the inside of the vacuum container, the reaction by-products attached to the shield plate during plasma processing are cleaned with a cleaning gas. An object of the present invention is to provide a plasma processing apparatus that can be easily removed by plasma so that cleaning work inside a vacuum container can be easily performed in a short time and the operation rate of the apparatus can be increased.
【０００９】[0009]
【課題を解決するための手段】上記の目的を達成するた
めに、この発明によるプラズマ処理装置は、接地される
真空容器の内部に、上面に試料基板が載置される高周波
電極と、導電性を有し前記高周波電極の側面部を所定の
間隔距離をおいて取り囲むシールド板とを備え、高周波
電源から前記高周波電極に高周波電圧を印加することに
より、前記真空容器内に導入された処理ガスをプラズマ
化し、このプラズマにより前記高周波電極上に載置され
た試料基板にエッチング、ＣＶＤなどのプラズマ処理を
行うプラズマ処理装置において、前記シールド板を、前
記高周波電極の側面部および前記真空容器の内側の側壁
面を所定の間隔距離をおいて取り囲むべく形成してなる
ものとし、このシールド板を、前記試料基板をプラズマ
処理するときには接地電位に接続し、クリーニング用ガ
スを導入して前記真空容器内のクリーニングを行うとき
には、前記高周波電源の高周波電位に接続し、かつ前記
高周波電極を接地電位に接続する接続切換え手段を備え
ていることを特徴とするものである。In order to achieve the above object, a plasma processing apparatus according to the present invention comprises a high-frequency electrode having a sample substrate mounted on an upper surface thereof and a conductive material inside a vacuum container to be grounded. And a shield plate that surrounds the side surface of the high-frequency electrode at a predetermined distance, and by applying a high-frequency voltage from the high-frequency power source to the high-frequency electrode, the processing gas introduced into the vacuum container is removed. In a plasma processing apparatus that converts the plasma into plasma, and performs plasma processing such as etching and CVD on a sample substrate placed on the high-frequency electrode by the plasma, the shield plate is provided on the side surface of the high-frequency electrode and inside the vacuum container. The shield plate is formed so as to surround the side wall surface at a predetermined distance, and this shield plate is used for plasma treatment of the sample substrate. When cleaning the inside of the vacuum container by connecting to a ground potential and introducing a cleaning gas, it is provided with connection switching means for connecting to a high frequency potential of the high frequency power source and connecting the high frequency electrode to a ground potential. It is characterized by that.
【００１０】[0010]
【作用】この発明によるプラズマ処理装置おいては、シ
ールド板は、高周波電極の側面部および真空容器の内側
の側壁面を所定の間隔距離d1をおいて取り囲むべく形成
されている。この間隔距離d1としては、高周波放電にも
適用し得るパッシェンの法則（Paschen's law ）に基づ
いて、クリーニング時のクリーニング用ガスによるガス
圧力P1と上記間隔距離d1との積P1・d1の値が、シールド
板と真空容器側壁面間、およびシールド板と高周波電極
側面部間にて高周波放電を最も起こし易い値（パッシェ
ンの特性曲線における放電開始最小電圧）に対応するよ
うに設定しておけばよい。In the plasma processing apparatus according to the present invention, the shield plate is formed so as to surround the side surface portion of the high frequency electrode and the inner side wall surface of the vacuum container with a predetermined distance d 1 therebetween. As the separation distance d 1, based on the Paschen's law which can be applied to high-frequency discharge (Paschen's law), the product P 1 · d of the gas pressure P 1 and the gap distance d 1 by the cleaning gas during cleaning a value of 1, between the shield plate and the vacuum container side wall, and set to correspond to the most raised easily value high frequency discharge (discharge starting minimum voltage in the characteristic curve of Paschen) and at between the shield plate and the high frequency electrode side portions You can leave it.
【００１１】例えばエッチングを行う場合について説明
すると、高周波電極上に載置された試料基板をエッチン
グするときには、接続切換え手段により、シールド板が
真空容器と同様に接地電位に接続され、高周波電極が高
周波電源の高周波電位に接続される。また、真空容器内
の処理ガスによるガス圧力P2は、クリーニング時のクリ
ーニング用ガスによるガス圧力P1よりも低い値に設定さ
れる。そして、高周波電圧が印加されると、高周波放電
は、シールド板と高周波電極側面部との間では、エッチ
ング時のガス圧力P2と上記間隔距離d1との積P2・d1の値
が不適当なため起こらず、高周波電極上面と真空容器上
部内壁面との間で起こる。これにより、処理ガスがプラ
ズマ化されて通常のエッチングが行われ、このとき生成
する反応副生成物の大部分がシールド板に付着する。Explaining the case of etching, for example, when etching the sample substrate placed on the high-frequency electrode, the connection switching means connects the shield plate to the ground potential in the same manner as the vacuum container, so that the high-frequency electrode is exposed to high-frequency waves. Connected to the high frequency potential of the power supply. Further, the gas pressure P 2 due to the processing gas in the vacuum container is set to a value lower than the gas pressure P 1 due to the cleaning gas at the time of cleaning. Then, when a high-frequency voltage is applied, the high-frequency discharge has a value of the product P 2 · d 1 of the gas pressure P 2 at the time of etching and the distance d 1 between the shield plate and the side surface of the high-frequency electrode. It does not occur because of improperness, and occurs between the upper surface of the high frequency electrode and the inner wall surface of the upper part of the vacuum container. As a result, the processing gas is turned into plasma and normal etching is performed, and most of the reaction by-products generated at this time adhere to the shield plate.
【００１２】これに対して真空容器内のクリーニングを
行うときには、接続切換え手段により、シールド板が高
周波電源の高周波電位に接続され、高周波電極が接地電
位に接続される。真空容器は試料基板をエッチングする
ときと同様に接地されている。シールド板に高周波電圧
が印加されると、シールド板と真空容器側壁面間、およ
びシールド板と高周波電極側面部間とに高周波放電が起
こり、クリーニング用ガスがプラズマ化され、このプラ
ズマ化されたクリーニング用ガス中のラジカル，イオン
などが反応副生成物と反応し、シールド板に付着してい
た反応副生成物が除去される。また、プラズマによって
シールド板が加熱されることから、反応副生成物がより
除去され易くなる。On the other hand, when cleaning the inside of the vacuum container, the connection switching means connects the shield plate to the high frequency potential of the high frequency power source and the high frequency electrode to the ground potential. The vacuum container is grounded as in the case of etching the sample substrate. When a high-frequency voltage is applied to the shield plate, high-frequency discharge occurs between the shield plate and the side wall of the vacuum vessel, and between the shield plate and the side surface of the high-frequency electrode, and the cleaning gas is turned into plasma. Radicals and ions in the working gas react with the reaction by-products, and the reaction by-products attached to the shield plate are removed. Moreover, since the shield plate is heated by the plasma, the reaction by-product is more easily removed.
【００１３】[0013]
【実施例】以下、実施例に基づいてこの発明を説明す
る。図１はこの発明の一実施例によるエッチングを行う
プラズマ処理装置の構成説明図、図２はこの発明に係る
シールド板に付着した反応副生成物を除去する様子を説
明するための図である。なお、先に述べた図３に示すも
のと実質的に共通する部分には同一の符号を付してその
説明を省略し、異なる点についてのみ説明する。EXAMPLES The present invention will be described below based on examples. FIG. 1 is a diagram for explaining the configuration of a plasma processing apparatus for performing etching according to an embodiment of the present invention, and FIG. 2 is a diagram for explaining how to remove reaction by-products adhering to a shield plate according to the present invention. It should be noted that the portions substantially common to those shown in FIG. 3 described above are designated by the same reference numerals, the description thereof will be omitted, and only different points will be described.
【００１４】図１及び図２において、真空容器１内に
は、シールド板21が、高周波電極４の側面部および真空
容器１の側壁面を数mm程度の所定の間隔距離d1をおいて
取り囲むように設けられている。In FIGS. 1 and 2, a shield plate 21 surrounds the side surface of the high-frequency electrode 4 and the side wall surface of the vacuum container 1 at a predetermined distance d 1 of about several mm inside the vacuum container 1. Is provided.
【００１５】シールド板21は、図に示すように、高周波
電極４の側面部を取り囲むための、内側円筒状部材21
ａ、円環板部材21ｃ、及び真空容器１の側壁面を取り囲
むための外側円筒状部材21ｂとからなり、円環板部材21
ｃの内周端部に内側円筒状部材21ａをその下端部を沿わ
せて起立姿勢で固定し、円環板部材21ｃの外周端部に外
側円筒状部材21ｂをその下端部を沿わせて起立姿勢で固
定することにより、円環板部材21ｃを底面とする二重筒
状に形成したものである。As shown in the figure, the shield plate 21 is an inner cylindrical member 21 for surrounding the side surface of the high frequency electrode 4.
a, an annular plate member 21c, and an outer cylindrical member 21b for surrounding the side wall surface of the vacuum container 1,
The inner cylindrical member 21a is fixed to the inner peripheral end of c along its lower end in a standing posture, and the outer cylindrical member 21b is erected on the outer peripheral end of the annular plate member 21c along its lower end. By being fixed in an attitude, the annular plate member 21c is formed in a double cylinder shape having a bottom surface.
【００１６】上記シールド板21は、導電性を有し、この
実施例では、小径の貫通孔が多数穿設された例えばステ
ンレス製の多孔板を用いて形成されたメッシュ状のもの
とされている。シールド板21の内側の部分にガス溜まり
を生じさせないようにするため、メッシュ状としてい
る。このように構成されるシールド板21が、高周波電極
４の下部大径部上の絶縁体５に固定されたスペーサの役
目もを兼ねる取り付け用絶縁体22に、図示しないボルト
により取り付けられている。The shield plate 21 has conductivity, and in this embodiment, it is a mesh-like one formed by using a perforated plate made of, for example, stainless steel and having a large number of small through holes. .. In order to prevent gas accumulation in the inner part of the shield plate 21, it has a mesh shape. The shield plate 21 configured as described above is attached to the attachment insulator 22 that also functions as a spacer fixed to the insulator 5 on the lower large-diameter portion of the high-frequency electrode 4 by a bolt (not shown).
【００１７】23は接続切換え手段としての切換えスイッ
チである。この切換えスイッチ23は、同じように動作す
る２極の可動片S1，S2を有し、試料基板Ｗをエッチング
するときには、高周波電極４を高周波電源９の高周波電
位に接続するとともに、シールド板21を真空容器１と同
様に接地電位に接続し、真空容器１内のクリーニングを
行うときには、逆に、高周波電極４を真空容器１と同様
に接地電位に接続し、シールド板21を高周波電位に接続
するためのものである。Reference numeral 23 is a changeover switch as a connection changeover means. This change-over switch 23 has movable pieces S1 and S2 of two poles that operate in the same manner. When etching the sample substrate W, the high-frequency electrode 4 is connected to the high-frequency potential of the high-frequency power source 9 and the shield plate 21 is connected. When cleaning the inside of the vacuum container 1 by connecting to the ground potential like the vacuum container 1, the high frequency electrode 4 is connected to the ground potential like the vacuum container 1 and the shield plate 21 is connected to the high frequency potential. It is for.
【００１８】切換えスイッチ23の一方の可動片S1の共通
端子ｃに、コンデンサ10と高周波電源９とが順に直列接
続されており、高周波電源９の一方の側は接地されてい
る。もう一方の可動片S2の共通端子ｃは接地されてい
る。また、可動片S1の第１端子ａは高周波電極４に接続
されるとともに、可動片S2の第２端子ｂに接続されてい
る。さらに、可動片S1の第２端子ｂは上記シールド板21
に接続されるともに、可動片S2の第１端子ａに接続され
ている。A capacitor 10 and a high frequency power source 9 are serially connected in series to a common terminal c of one movable piece S1 of the changeover switch 23, and one side of the high frequency power source 9 is grounded. The common terminal c of the other movable piece S2 is grounded. The first terminal a of the movable piece S1 is connected to the high frequency electrode 4 and the second terminal b of the movable piece S2. Further, the second terminal b of the movable piece S1 is the shield plate 21.
And is also connected to the first terminal a of the movable piece S2.
【００１９】上記構成になるプラズマ処理装置の動作
を、図１及び図２を参照しながら、以下に説明する。ま
ず、切換えスイッチ23を操作して、高周波電極４に高周
波電源９から高周波電圧が印加され、シールド板21が接
地されるように接続する。The operation of the plasma processing apparatus having the above structure will be described below with reference to FIGS. 1 and 2. First, the changeover switch 23 is operated to apply a high frequency voltage from the high frequency power source 9 to the high frequency electrode 4 so that the shield plate 21 is grounded.
【００２０】高周波電極４上に試料基板Ｗを載置した
後、処理ガスとして例えばCl2 ガスを導入し、真空容器
１内の圧力、つまりCl2 ガスによるガス圧力P2が例えば
0.005Torr程度になるように保持する。高周波電源９を
起動して高周波電極４に高周波電圧が印加されると、高
周波放電が起こり、真空容器１内に導入されたCl2 ガス
がプラズマ化されて、真空容器１内の上部にプラズマPe
が形成される。高周波出力は、例えば150 ワット程度に
設定される。After mounting the sample substrate W on the high-frequency electrode 4, for example, Cl 2 gas is introduced as a processing gas, and the pressure in the vacuum container 1, that is, the gas pressure P 2 due to Cl 2 gas is, for example,
Hold it to about 0.005 Torr. When the high-frequency power source 9 is activated and a high-frequency voltage is applied to the high-frequency electrode 4, a high-frequency discharge occurs, the Cl 2 gas introduced into the vacuum container 1 is turned into plasma, and a plasma Pe is formed in the upper part of the vacuum container 1.
Is formed. The high frequency output is set to about 150 watts, for example.
【００２１】高周波放電は、シールド板21と高周波電極
４側面部との間では、ガス圧力P2と間隔距離d1との積P2
・d1の値が不適当なため起こらず、高周波電極４上面と
真空容器１上部内壁面との間で起こる。これにより、試
料基板Ｗのエッチングが行われ、このとき生成する反応
副生成物の大部分がシールド板21に付着する。The high frequency discharge is the product P 2 of the gas pressure P 2 and the distance d 1 between the shield plate 21 and the side surface of the high frequency electrode 4.
This does not occur because the value of d 1 is improper, and occurs between the upper surface of the high frequency electrode 4 and the inner wall surface of the upper portion of the vacuum container 1. As a result, the sample substrate W is etched, and most of the reaction by-products generated at this time adhere to the shield plate 21.
【００２２】次に、シールド板21に付着している反応副
生成物を除去して真空容器１のクリーニングを行うとき
には、切換えスイッチ23を操作して、シールド板21に高
周波電源９から高周波電圧が印加され、高周波電極４が
接地されるように接続する。そして、クリーニング用の
ハロゲンガスとして例えばNF3 ガスを導入し、真空容器
１内の圧力、つまりNF3 ガスによるガス圧力P1が、エッ
チング処理のときのガス圧力P2よりも高い値、例えば0.
1 Torr程度になるように保持する。Next, when the reaction by-product adhering to the shield plate 21 is removed and the vacuum vessel 1 is cleaned, the changeover switch 23 is operated to apply a high frequency voltage from the high frequency power source 9 to the shield plate 21. The high-frequency electrode 4 is applied and connected so that the high-frequency electrode 4 is grounded. Then, for example, NF 3 gas is introduced as a halogen gas for cleaning, and the pressure in the vacuum container 1, that is, the gas pressure P 1 by the NF 3 gas is higher than the gas pressure P 2 at the time of etching treatment, for example, 0. .
Hold it to about 1 Torr.
【００２３】高周波電源９を起動してシールド板21に高
周波電圧が印加されると、エッチング処理のときに比べ
てガス圧力P1が高く、分子の平均自由行程が短く、ガス
圧力P1と上記間隔距離d1との積P1・d1の値が、シールド
板21と真空容器１側壁面間、およびシールド21板と高周
波電極４側面部間にて高周波放電を最も起こし易い値
（パッシェンの特性曲線における放電開始最小電圧）に
対応するように設定されることから、図２に示すよう
に、シールド板21と真空容器１側壁面との間、シールド
板21と高周波電極４側面部との間に、高周波放電が起こ
りNF3 ガスによるプラズマPcが形成される。なお、高周
波出力は、例えば500 ワット程度に設定される。When the high frequency power source 9 is activated and a high frequency voltage is applied to the shield plate 21, the gas pressure P 1 is higher than in the etching process, the mean free path of molecules is short, and the gas pressure P 1 and the value of the product P 1 · d 1 of the gap distance d 1 is between the shield plate 21 and the vacuum vessel 1 side wall surface, and the shield 21 plates and at between the high-frequency electrode 4 side portions most cause likely value high frequency discharge (the Paschen Since it is set so as to correspond to the discharge starting minimum voltage in the characteristic curve), as shown in FIG. 2, between the shield plate 21 and the side wall surface of the vacuum container 1, and between the shield plate 21 and the side surface of the high frequency electrode 4. In the meantime, a high frequency discharge occurs and a plasma Pc is formed by the NF 3 gas. The high frequency output is set to about 500 watts, for example.
【００２４】このプラズマ化されたNF3 ガス中のラジカ
ル，イオンなどが反応副生成物と反応して、シールド板
21に付着していた反応副生成物が除去される。このと
き、プラズマによってシールド板21が加熱されることか
ら、反応副生成物がより除去され易くなる。Radicals, ions, etc. in the plasma-converted NF 3 gas react with the reaction by-products to form a shield plate.
The reaction by-product adhering to 21 is removed. At this time, since the shield plate 21 is heated by the plasma, the reaction byproduct is more easily removed.
【００２５】このようにして、エッチング処理するとき
には、反応副生成物の大部分をシールド板21に付着させ
ることにより、真空容器１や高周波電極４への反応副生
成物の付着を減少させることができ。そして、真空容器
１のクリーニングを行うときには、シールド板21と真空
容器１側壁面との間、およびシールド板21と高周波電極
４側面部との間にクリーニング用ガスによるプラズマを
形成させることにより、エッチング処理時にシールド板
21に付着した反応副生成物を容易に除去することができ
る。In this way, during the etching process, most of the reaction by-products are attached to the shield plate 21, so that the attachment of the reaction by-products to the vacuum container 1 and the high frequency electrode 4 can be reduced. I can. When the vacuum container 1 is cleaned, etching is performed by forming plasma with the cleaning gas between the shield plate 21 and the side wall surface of the vacuum container 1 and between the shield plate 21 and the side surface of the high frequency electrode 4. Shield plate during processing
The reaction by-product attached to 21 can be easily removed.
【００２６】これにより、真空容器内のクリーニング作
業にかかる時間が従来装置に比べて大幅減となり、装置
稼働率を高めることができる。なお、上記実施例では試
料基板をエッチングする場合の例について説明したが、
この発明によるプラズマ処理装置では、試料基板をＣＶ
Ｄ処理する場合についても、上記同様にして、真空容器
内のクリーニング作業にかかる時間を従来装置に比べて
大幅に短縮することができる。As a result, the time required for the cleaning operation inside the vacuum container is greatly reduced as compared with the conventional apparatus, and the operation rate of the apparatus can be increased. In the above embodiment, an example of etching the sample substrate has been described,
In the plasma processing apparatus according to the present invention, the sample substrate is CV
Also in the case of the D treatment, the time required for cleaning the inside of the vacuum container can be significantly reduced as compared with the conventional apparatus in the same manner as described above.
【００２７】[0027]
【発明の効果】以上述べたように、この発明によるプラ
ズマ処理装置は、接地される真空容器の内部に、試料基
板が載置される高周波電極の側面部および真空容器の側
壁面を所定の間隔距離をおいて取り囲むようにしたシー
ルド板が設けられる一方、このシールド板を、高周波電
源から高周波電圧を高周波電極に印加して試料基板をエ
ッチング、ＣＶＤなどのプラズマ処理するときには接地
電位に接続し、クリーニング用ガスを導入して真空容器
内のクリーニングを行うときには、高周波電源の高周波
電位に接続し、かつ高周波電極を接地電位に接続する接
続切換え手段が備えられた構成とされている。As described above, in the plasma processing apparatus according to the present invention, the side surface of the high-frequency electrode on which the sample substrate is placed and the side wall surface of the vacuum container are spaced by a predetermined distance inside the grounded vacuum container. While a shield plate is provided so as to surround it at a distance, this shield plate is connected to a ground potential when a high frequency voltage is applied to a high frequency electrode from a high frequency power source to etch a sample substrate and perform plasma processing such as CVD, When the cleaning gas is introduced to clean the inside of the vacuum container, connection switching means is provided for connecting to the high frequency potential of the high frequency power source and connecting the high frequency electrode to the ground potential.
【００２８】したがって、この発明によるプラズマ処理
装置によると、プラズマ処理するときには、反応副生成
物の大部分をシールド板に付着させることにより、真空
容器や高周波電極への反応副生成物の付着を減少させる
ことができ、真空容器内のクリーニングを行うときに
は、シールド板と真空容器側壁面との間、およびシール
ド板と高周波電極側面部との間にクリーニング用ガスに
よるプラズマを形成させることにより、上記プラズマ処
理時にシールド板に付着した反応副生成物を容易に除去
することができる。これにより、真空容器内のクリーニ
ング作業にかかる時間が従来装置に比べて大幅減とな
り、装置稼働率を高めることができる。Therefore, according to the plasma processing apparatus of the present invention, during plasma processing, most of the reaction by-products are attached to the shield plate to reduce the attachment of the reaction by-products to the vacuum container and the high frequency electrode. When cleaning the inside of the vacuum container, plasma generated by the cleaning gas is formed between the shield plate and the side wall of the vacuum container and between the shield plate and the side surface of the high-frequency electrode. The reaction by-product attached to the shield plate during processing can be easily removed. As a result, the time required for cleaning the inside of the vacuum container is significantly reduced as compared with the conventional apparatus, and the apparatus operating rate can be increased.
【図１】この発明の一実施例によるエッチングを行うプ
ラズマ処理装置の構成説明図である。FIG. 1 is a structural explanatory view of a plasma processing apparatus that performs etching according to an embodiment of the present invention.
【図２】この発明に係るシールド板に付着した反応副生
成物を除去する様子を説明するための図である。FIG. 2 is a diagram for explaining how to remove reaction by-products adhering to the shield plate according to the present invention.
【図３】従来のプラズマ処理装置の構成説明図である。FIG. 3 is a diagram illustrating the configuration of a conventional plasma processing apparatus.
【図４】図３に示すプラズマ処理装置における反応副生
成物の付着の様子を説明するための図である。FIG. 4 is a diagram for explaining how reaction by-products adhere in the plasma processing apparatus shown in FIG.
１…真空容器 1a…真空容器本体 1b…真空容器の上蓋
２…処理ガス導入口 ３…処理ガス排気口 ４…高周波電極 ５…絶縁体 ６
…冷却水導入管 ７…冷却水排出管 ８…電極シールド
板 ９…高周波電源 10…コンデンサ 11…磁石組立
21…シールド板 21ａ…内側円筒状部材 21ｂ…外側円
筒状部材 21ｃ…円環板部材 22…取り付け用絶縁体
23…切換えスイッチ Ｗ…試料基板 Ｐ，Pe，Pc…プラ
ズマ1 ... Vacuum container 1a ... Vacuum container main body 1b ... Vacuum container upper lid 2 ... Processing gas introduction port 3 ... Processing gas exhaust port 4 ... High frequency electrode 5 ... Insulator 6
Cooling water inlet pipe 7 Cooling water discharge pipe 8 Electrode shield plate 9 High frequency power supply 10 Capacitor 11 Magnet assembly
21 ... Shield plate 21a ... Inner cylindrical member 21b ... Outer cylindrical member 21c ... Annular plate member 22 ... Mounting insulator
23 ... Changeover switch W ... Sample substrate P, Pe, Pc ... Plasma
Claims (1)
料基板が載置される高周波電極と、導電性を有し前記高
周波電極の側面部を所定の間隔距離をおいて取り囲むシ
ールド板とを備え、高周波電源から前記高周波電極に高
周波電圧を印加することにより、前記真空容器内に導入
された処理ガスをプラズマ化し、このプラズマにより前
記高周波電極上に載置された試料基板にエッチング、Ｃ
ＶＤなどのプラズマ処理を行うプラズマ処理装置におい
て、前記シールド板を、前記高周波電極の側面部および
前記真空容器の内側の側壁面を所定の間隔距離をおいて
取り囲むべく形成してなるものとし、このシールド板
を、前記試料基板をプラズマ処理するときには接地電位
に接続し、クリーニング用ガスを導入して前記真空容器
内のクリーニングを行うときには、前記高周波電源の高
周波電位に接続し、かつ前記高周波電極を接地電位に接
続する接続切換え手段を備えていることを特徴とするプ
ラズマ処理装置。1. A high-frequency electrode having a sample substrate mounted on an upper surface thereof, and a shield plate having conductivity and surrounding a side surface portion of the high-frequency electrode with a predetermined gap distance inside a grounded vacuum container. By applying a high-frequency voltage from the high-frequency power source to the high-frequency electrode, the processing gas introduced into the vacuum container is turned into plasma, and the plasma is used to etch a sample substrate placed on the high-frequency electrode, C
In a plasma processing apparatus for performing plasma processing such as VD, the shield plate is formed to surround a side surface portion of the high frequency electrode and an inner side wall surface of the vacuum container with a predetermined distance. The shield plate is connected to the ground potential when the sample substrate is plasma-processed, and is connected to the high-frequency potential of the high-frequency power source when cleaning the vacuum container by introducing a cleaning gas, and the high-frequency electrode is connected. A plasma processing apparatus comprising a connection switching means for connecting to a ground potential.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3293266A JPH05125541A (en) | 1991-11-08 | 1991-11-08 | Plasma treating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3293266A JPH05125541A (en) | 1991-11-08 | 1991-11-08 | Plasma treating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05125541A true JPH05125541A (en) | 1993-05-21 |
Family
ID=17792601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3293266A Withdrawn JPH05125541A (en) | 1991-11-08 | 1991-11-08 | Plasma treating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05125541A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002049925A1 (en) * | 2000-12-21 | 2002-06-27 | Mitsubishi Shoji Plastics Corporation | Apparatus for manufacturing dlc-film-coated plastic container, method of manufacturing the same, and method for cleaning inner electrode |
| US6513452B2 (en) * | 1994-12-15 | 2003-02-04 | Applied Materials Inc. | Adjusting DC bias voltage in plasma chamber |
| JP2007081221A (en) * | 2005-09-15 | 2007-03-29 | Hitachi High-Technologies Corp | Plasma treatment apparatus and treatment method |
| JP2008140875A (en) * | 2006-11-30 | 2008-06-19 | Matsushita Electric Ind Co Ltd | Plasma processing apparatus, and cleaning method therefor |
| US7406925B2 (en) | 2000-10-03 | 2008-08-05 | Matsushita Electric Industrial Co., Ltd. | Plasma processing method and apparatus |
| US20110024040A1 (en) * | 2009-07-28 | 2011-02-03 | Tokyo Electron Limited | Deposit protection cover and plasma processing apparatus |
| WO2012071903A1 (en) * | 2010-12-02 | 2012-06-07 | 理想能源设备(上海)有限公司 | Plasma processing device |
| US11107706B2 (en) * | 2016-10-08 | 2021-08-31 | Beijing Naura Microelectronics Equipment Co., Ltd. | Gas phase etching device and gas phase etching apparatus |
-
1991
- 1991-11-08 JP JP3293266A patent/JPH05125541A/en not_active Withdrawn
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6513452B2 (en) * | 1994-12-15 | 2003-02-04 | Applied Materials Inc. | Adjusting DC bias voltage in plasma chamber |
| US7406925B2 (en) | 2000-10-03 | 2008-08-05 | Matsushita Electric Industrial Co., Ltd. | Plasma processing method and apparatus |
| WO2002049925A1 (en) * | 2000-12-21 | 2002-06-27 | Mitsubishi Shoji Plastics Corporation | Apparatus for manufacturing dlc-film-coated plastic container, method of manufacturing the same, and method for cleaning inner electrode |
| JP2007081221A (en) * | 2005-09-15 | 2007-03-29 | Hitachi High-Technologies Corp | Plasma treatment apparatus and treatment method |
| JP4588595B2 (en) * | 2005-09-15 | 2010-12-01 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus and processing method |
| JP2008140875A (en) * | 2006-11-30 | 2008-06-19 | Matsushita Electric Ind Co Ltd | Plasma processing apparatus, and cleaning method therefor |
| US20110024040A1 (en) * | 2009-07-28 | 2011-02-03 | Tokyo Electron Limited | Deposit protection cover and plasma processing apparatus |
| US8974600B2 (en) * | 2009-07-28 | 2015-03-10 | Tokyo Electron Limited | Deposit protection cover and plasma processing apparatus |
| WO2012071903A1 (en) * | 2010-12-02 | 2012-06-07 | 理想能源设备(上海)有限公司 | Plasma processing device |
| US9271384B2 (en) | 2010-12-02 | 2016-02-23 | Ideal Energy (Shanghai) Sunflower Thin Film Equipment, Ltd. | Plasma processing apparatus |
| US11107706B2 (en) * | 2016-10-08 | 2021-08-31 | Beijing Naura Microelectronics Equipment Co., Ltd. | Gas phase etching device and gas phase etching apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
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