JPH0511439U - Crystal cutting device - Google Patents
Crystal cutting deviceInfo
- Publication number
- JPH0511439U JPH0511439U JP5813291U JP5813291U JPH0511439U JP H0511439 U JPH0511439 U JP H0511439U JP 5813291 U JP5813291 U JP 5813291U JP 5813291 U JP5813291 U JP 5813291U JP H0511439 U JPH0511439 U JP H0511439U
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- cutting device
- cutting
- wire
- jig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
(57)【要約】
【目的】製品に傷をつけることなく、生産性の高い結晶
切断装置の提供。
【構成】マルチワイヤソーのスライスベースに、スリッ
トを設け、結晶切断後そこから洗浄液を出すことによ
り、ウエハ間の砥粒を完全に排出する結晶切断装置。
(57) [Summary] [Purpose] To provide a highly productive crystal cutting device without damaging the product. [Structure] A crystal cutting device in which a slit is provided in a slice base of a multi-wire saw, and a cleaning liquid is discharged from the crystal after cutting the crystal to completely discharge abrasive grains between wafers.
Description
【0001】[0001]
本考案は結晶切断装置の改良に関するものである。 The present invention relates to an improvement of a crystal cutting device.
【0002】[0002]
従来よりGaP等の化合物半導物単結晶や水晶などを、薄板状(ウエハ)に切 断する装置として、ワイヤを用いた切断装置が使用されている。 BACKGROUND ART Conventionally, a cutting device using a wire has been used as a device for cutting a compound semiconductor single crystal such as GaP or a crystal, into a thin plate (wafer).
【0003】 これは、ワイヤ(ピアノ線)を多溝を有する滑車に多数回巻き付け、往復運動 させる。これに加工物を一定荷重で押し当てて、さらに研磨砥粒を含むスラリー をかけることにより、加工物を切断していく装置であり、一般にマルチワイヤソ ーと称されている。In this, a wire (piano wire) is wound around a pulley having multiple grooves many times and reciprocated. It is a device that cuts a workpiece by pressing the workpiece against this with a constant load and further applying a slurry containing abrasive grains, which is generally called a multi-wire saw.
【0004】 この装置の特徴は脆い材料でも薄く、しかも一度に多数枚を切断できることで ある。The characteristic of this device is that even a brittle material is thin, and more than one piece can be cut at a time.
【0005】 図5はこの装置の主要な部分の斜視図である。ワイヤ6は、ワイヤ繰り出し装 置(図示せず)から繰り出され3個ないし4個の多溝滑車5に、らせん状に多数 回巻かれたのち、巻取り装置(図示せず)に巻かれる。切断を完了すると加工物 1を切断時とは逆の方向に送り、ワイヤ6を加工物1から抜き、加工物1´を取 り出す。FIG. 5 is a perspective view of the main part of this device. The wire 6 is unwound from a wire unwinding device (not shown), is wound around the multi-groove pulleys 3 to 4 many times in a spiral, and then is wound around a winding device (not shown). When the cutting is completed, the work piece 1 is fed in the opposite direction to that at the time of cutting, the wire 6 is pulled out from the work piece 1, and the work piece 1 ′ is taken out.
【0006】 2はスライスベースである。切断は図6に示す様にスライスベース2の途中ま で行ない、切断後の加工物(薄板)1´を保持する役目を待つ。材質はガラス、 セラミック、カーボン等が使用される。Reference numeral 2 is a slice base. The cutting is performed halfway along the slice base 2 as shown in FIG. 6, and waits for the role of holding the cut workpiece (thin plate) 1 '. The material used is glass, ceramic, carbon, or the like.
【0007】 3は、加工物1及びスライスベース2を、装置に取付けるための治具である。 加工物1、スラススベース2、治具3は互いに接着剤で固定される。Reference numeral 3 is a jig for attaching the workpiece 1 and the slice base 2 to the apparatus. The workpiece 1, the thrust base 2, and the jig 3 are fixed to each other with an adhesive.
【0008】 ところで、従来のこの結晶切断装置は、加工物1から、ワイヤ6を抜く際、化 合物半導体等の比較的軟かい加工物1の場合、ワイヤ6による傷が発生しやすい 欠点があった。この傷は目視にてもはっきり認められ、製品の価値を著しく低下 させ、最悪の場合は、割れ不良となり、歩留を低下させる。By the way, in the conventional crystal cutting device, when the wire 6 is pulled out from the workpiece 1, in the case of the relatively soft workpiece 1 such as a compound semiconductor, the wire 6 is likely to be damaged. there were. These scratches are clearly visible and significantly reduce the value of the product, and in the worst case, cause cracking failure and reduce the yield.
【0009】 これは、加工物1の切断溝の間に、研磨砥粒4が残っているのと薄板1´同士 がスラリーの表面張力により吸着し、これを剥すような形でワイヤ6を抜くと吸 着力により、研磨砥粒4の付着したワイヤ6が加工物1´に押し当てられ、傷を 与えるものである。This is because the abrasive grains 4 remain between the cut grooves of the workpiece 1 and the thin plates 1 ′ are attracted by the surface tension of the slurry, and the wire 6 is pulled out in such a manner that it is peeled off. The wire 6 having the abrasive grains 4 adhered thereto is pressed against the workpiece 1 ′ by the suction force to cause scratches.
【0010】 これを防ぐためには、切断完了時にワイヤ6を切り、ワイヤ6を横方向に抜く 方法があるが、ワイヤ6を切るため、連続作業ができず、生産性が低くなる。In order to prevent this, there is a method of cutting the wire 6 at the completion of cutting and pulling out the wire 6 in the lateral direction. However, since the wire 6 is cut, continuous work cannot be performed, and the productivity is lowered.
【0011】[0011]
本考案の目的は、前記した従来技術の欠点を解消し、傷を発生させることなく 、ワイヤーを抜き、製品の価値を高め、またマルチワイヤソーの生産性を高める ことにある。 An object of the present invention is to solve the above-mentioned drawbacks of the prior art, to remove wires without causing scratches, to increase the value of the product, and to improve the productivity of the multi-wire saw.
【0012】[0012]
即ち本考案の要旨は、加工物を固定する治具の上に洗浄液供給口を設けておき 、結晶切断後そこから洗浄液を出すことにより、薄板の間の砥粒を完全に排出す る結晶切断装置にある。 That is, the gist of the present invention is to provide a cleaning liquid supply port on a jig for fixing a work piece, and after the crystal is cut, the cleaning liquid is discharged to completely discharge the abrasive grains between the thin plates. On the device.
【0013】[0013]
本考案結晶切断装置の一実施例を図1に示す。これは、加工物1、スライスベ ース7、治具8の部分であって、他の部分である溝付ローラ等は従来と変わらな いため省略してある。(従来例の図5参照) スライスベース7と治具8にはそれぞれ洗浄液供給口としてのスリットと穴が あり、外部のポンプPとホースでつながれている。加工終了時ポンプから洗浄液 を流し込むことにより、薄板の間に残っている砥粒を洗い出す。 An embodiment of the crystal cutting device of the present invention is shown in FIG. This is the portion of the workpiece 1, the slice base 7, and the jig 8, and the other portions, such as the grooved rollers, are omitted because they are the same as the conventional ones. (See FIG. 5 of the conventional example) The slice base 7 and the jig 8 each have a slit and a hole as a cleaning liquid supply port, and are connected by an external pump P and a hose. At the end of processing, a cleaning liquid is poured from the pump to wash out the abrasive grains remaining between the thin plates.
【0014】 図3は治具8でありポンプPと継ぐホースを接続するコネクター10が付いて おり、ここからスライスベース7の方に洗浄液を流すための横穴と縦穴があいて いる。縦穴はスリット状のものでもよい。FIG. 3 shows a jig 8 which is provided with a connector 10 for connecting a hose connected to the pump P, from which a slice base 7 is provided with a horizontal hole and a vertical hole for flowing a cleaning liquid. The vertical hole may have a slit shape.
【0015】 図2はスライスベース7である。中央にスリット11があけてあり、この中を 洗浄液が流れる。スリット11と治具8の縦穴の位置は、互いに接着した時に同 じ位置となる。FIG. 2 shows the slice base 7. There is a slit 11 in the center, through which the cleaning liquid flows. The positions of the slit 11 and the vertical holes of the jig 8 are the same when they are bonded to each other.
【0016】 加工前に、これらの治具8、スライスベース7、加工物1を接着する。なお、 スリット11が接着剤で埋まらぬよう、スリット11付近の接着剤を少なくする などの注意が必要である。Before processing, the jig 8, the slice base 7, and the processed product 1 are bonded. In addition, care must be taken to reduce the amount of adhesive in the vicinity of the slit 11 so that the slit 11 is not filled with the adhesive.
【0017】 加工完了時には、洗浄液9を注入することにより薄板1´の間に残った砥粒4 を排出することができる。When the processing is completed, the cleaning liquid 9 is injected so that the abrasive grains 4 remaining between the thin plates 1 ′ can be discharged.
【0018】 図4は洗浄液9の流れを示す断面図である。FIG. 4 is a sectional view showing the flow of the cleaning liquid 9.
【0019】[0019]
以上説明して通り本考案装置によれば、外から洗浄した場合には完全に洗浄さ れずに残る薄板の間の砥粒を、内から洗浄することにより、ほぼ完全に排出、洗 浄できる。 As described above, according to the device of the present invention, the abrasive grains between the thin plates that are not completely washed when washed from the outside can be almost completely discharged and washed by washing from the inside.
【0020】 これにより、薄板に傷つけることなく、容易にワイヤを抜くことができる。こ の結果、薄板の割れや不良等を防止し、歩留を向上することができる。また、表 面に傷のない商品価値が高い薄板が切断できるものであり、その実用的価値は大 なるものがある。Thus, the wire can be easily pulled out without damaging the thin plate. As a result, it is possible to prevent cracks and defects of the thin plate and improve the yield. In addition, it can cut thin plates with high surface value and no scratches, and its practical value is great.
【図1】本考案切断装置の一実施例を示す加工部の斜視
説明図。FIG. 1 is a perspective explanatory view of a processing unit showing an embodiment of a cutting device of the present invention.
【図2】本考案に用いられるスライスベースの一実施例
を示す斜視説明図。FIG. 2 is a perspective explanatory view showing an embodiment of a slice base used in the present invention.
【図3】本考案に用いられる治具の一実施例を示す斜視
説明図。FIG. 3 is a perspective explanatory view showing an embodiment of a jig used in the present invention.
【図4】本考案装置を用いて切断したウエハ部の切断完
了時の断面説明図。FIG. 4 is an explanatory cross-sectional view of a wafer portion cut by using the device of the present invention when the cutting is completed.
【図5】従来の切断装置の一例を示す斜視説明図。FIG. 5 is an explanatory perspective view showing an example of a conventional cutting device.
【図6】従来の切断装置で切断完了した時の加工物部分
の断面説明図。FIG. 6 is a cross-sectional explanatory view of a workpiece portion when the cutting is completed by a conventional cutting device.
1 加工物 1´ 薄板(切断完了後の加工物) 2 スライスベース 3 治具 4 砥粒 5 多溝滑車 6 ワイヤ 7 スライスベース 8 治具 9 洗浄液 10 コネクタ 11 スリット 1 Workpiece 1 ′ Thin plate (workpiece after completion of cutting) 2 Slice base 3 Jig 4 Abrasive grain 5 Multi-groove pulley 6 Wire 7 Slice base 8 Jig 9 Cleaning liquid 10 Connector 11 Slit
Claims (1)
に、その上部より多溝滑車に張渡されて連続的に移動す
るワイヤを研磨液を供給しながら前記半導体結晶に押当
てて複数枚のウエハに切断する結晶切断装置において結
晶切断完了後に複数枚のウエハ間に洗浄液を流すための
洗浄液供給口を治具に設けて構成されたことを特徴とす
る結晶切断装置。1. A semiconductor crystal is mounted on a jig, and a wire, which is stretched from its upper portion to a multi-groove pulley and continuously moves, is pressed against the semiconductor crystal while supplying a polishing liquid. In a crystal cutting device for cutting a wafer, a jig is provided with a cleaning liquid supply port for flowing a cleaning liquid between a plurality of wafers after completion of the crystal cutting, and the crystal cutting device is characterized.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5813291U JPH0511439U (en) | 1991-07-24 | 1991-07-24 | Crystal cutting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5813291U JPH0511439U (en) | 1991-07-24 | 1991-07-24 | Crystal cutting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0511439U true JPH0511439U (en) | 1993-02-12 |
Family
ID=13075460
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5813291U Pending JPH0511439U (en) | 1991-07-24 | 1991-07-24 | Crystal cutting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0511439U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011517133A (en) * | 2008-04-14 | 2011-05-26 | アプライド マテリアルズ インコーポレイテッド | Wire saw device and method for operating the same |
CN109968136A (en) * | 2019-04-25 | 2019-07-05 | 内蒙古中环协鑫光伏材料有限公司 | A kind of polygon silicon single crystal rod and its processing method |
-
1991
- 1991-07-24 JP JP5813291U patent/JPH0511439U/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011517133A (en) * | 2008-04-14 | 2011-05-26 | アプライド マテリアルズ インコーポレイテッド | Wire saw device and method for operating the same |
CN109968136A (en) * | 2019-04-25 | 2019-07-05 | 内蒙古中环协鑫光伏材料有限公司 | A kind of polygon silicon single crystal rod and its processing method |
CN109968136B (en) * | 2019-04-25 | 2023-08-18 | 内蒙古中环晶体材料有限公司 | Polygonal monocrystalline silicon rod and processing method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR0132274B1 (en) | Polishing apparatus of semiconductor wafer | |
US5891298A (en) | Method and apparatus for peeling protective adhesive tape from semiconductor wafer | |
US9595463B2 (en) | Wafer processing method | |
JPH01316162A (en) | Cutting method for fragile material | |
JPH11254309A (en) | Device and method for machining wafer | |
JP2010097976A (en) | Method of cutting out silicon block | |
KR102471435B1 (en) | Workpiece cutting method | |
JP2006272756A (en) | Holding device of semiconductor block | |
JP2000061803A (en) | Saw wire assembly, and cutting method and cutting device using the same | |
JP3325676B2 (en) | Slicing method of silicon ingot | |
JP2004082282A (en) | Method for slicing semiconductor block | |
JPH0511439U (en) | Crystal cutting device | |
JP2003159642A (en) | Work cutting method and multi-wire saw system | |
JPH07314436A (en) | Wire saw device | |
JP2765307B2 (en) | Cutting method with multi-wire saw | |
KR100207810B1 (en) | Method and apparatus for cutting wafer by wiresaw | |
JPH0550422A (en) | Cutting method by means of multiwire saw | |
TWI581903B (en) | Method of manufacturing substrate | |
JP3973843B2 (en) | Semiconductor wafer and manufacturing method thereof | |
JP2551229B2 (en) | Cutting method and apparatus using multi-wire saw | |
JPH11277395A (en) | Wire saw device and method for cutting work | |
JP7441779B2 (en) | How to cut the workpiece | |
JP2016082192A (en) | Division method for package substrate | |
EP1549472B1 (en) | Method for manufacturing a packaged semiconductor device, packaged semiconductor device obtained with such a method and metal carrier suitable for use in such a method | |
CN213111765U (en) | Side cut coiling mechanism is made to emery cloth |