JPH05109947A - Heat conducting material and its manufacture - Google Patents
Heat conducting material and its manufactureInfo
- Publication number
- JPH05109947A JPH05109947A JP29249591A JP29249591A JPH05109947A JP H05109947 A JPH05109947 A JP H05109947A JP 29249591 A JP29249591 A JP 29249591A JP 29249591 A JP29249591 A JP 29249591A JP H05109947 A JPH05109947 A JP H05109947A
- Authority
- JP
- Japan
- Prior art keywords
- thermal expansion
- expansion metal
- metal plate
- plate
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体チップ搭載用
放熱基板やリードフレーム用材料の如く、半導体チップ
による発熱を効率良く外部に放熱するため、金属、セラ
ミックス、Ｓｉ等の半導体、プラスチックス等の被着相
手材との熱膨張係数の整合性と良好な熱伝導性を両立で
きるように、熱膨張係数及び熱伝導率を任意に変化さ
せ、かつ相手材との接合性並びに表面性状のすぐれた熱
伝導複合材料に係り、厚み方向に多数の貫通孔を設けた
低熱膨張金属板の片面に常温または再結晶温度以上に加
熱した高熱膨張金属板を圧接した２層材、あるいはさら
に低熱膨張金属板の他面に高熱膨張金属板を圧接した３
層材を直接あるいは適宜高熱膨張金属板を介在させて圧
接することにより、接合強度が高く、選定したこれら金
属板の厚さ比や貫通孔面積比を変化させることなく熱膨
張係数、熱伝導率を可変となし、受熱の均一化、熱拡散
効果の向上をはかり、表面微細孔がなくメッキやろう材
など薄膜の被着性にすぐれた熱伝導材料とその製造方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention efficiently dissipates heat generated by a semiconductor chip to the outside, such as a heat dissipating substrate for mounting a semiconductor chip or a material for a lead frame. The thermal expansion coefficient and the thermal conductivity are changed arbitrarily so that the matching of the thermal expansion coefficient with the adherend mating material and the good thermal conductivity can both be achieved, and the bondability and surface quality with the mating material are excellent. The heat conduction composite material, a two-layer material in which a high thermal expansion metal plate heated to room temperature or a recrystallization temperature or more is pressure-welded to one surface of a low thermal expansion metal plate having a large number of through holes in the thickness direction, or a low thermal expansion metal A high thermal expansion metal plate was pressed against the other surface of the plate 3
The layered material is pressed directly or with a high thermal expansion metal plate interposed as appropriate, resulting in high bonding strength, and thermal expansion coefficient and thermal conductivity without changing the thickness ratio or through hole area ratio of these selected metal plates. The present invention relates to a heat-conducting material which is variable in temperature, uniforms heat reception, improves a heat diffusion effect, has no surface fine pores, and has excellent adherence to a thin film such as plating or brazing material, and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】半導体パッケージの集積回路チップ（以
下チップ）、とりわけ大型コンピューター用のＬＳＩ
やＵＬＳＩは、高集積度化、演算速度の高速化の方向に
進んでおり、作動中における消費電力の増加に伴う発熱
量が非常に大きくなっている。該チップは大容量化して
発熱量が大きくなっており、基板材料の熱膨張係数がチ
ップ材料であるシリコンやガリウムヒ素等と大きな差が
あると、チップが剥離あるいは割れを生ずる問題があ
る。2. Description of the Related Art A semiconductor package integrated circuit chip (hereinafter referred to as a chip), especially an LSI for a large computer
2. Description of the Related Art ULSI and ULSI are advancing toward higher integration and higher calculation speed, and the amount of heat generated is extremely large due to the increase in power consumption during operation. The chip has a large capacity and a large amount of heat generation, and if the coefficient of thermal expansion of the substrate material is largely different from that of the chip material such as silicon or gallium arsenide, there is a problem that the chip peels or cracks.
【０００３】これに伴ない半導体パッケージの設計も、
熱放散性を考慮したものとなり、チップを搭載する基板
にも放熱性が要求されるようになり、基板材料の熱伝導
率が大きいことが求められている。従って、基板にはチ
ップと熱膨張係数が近く、かつ熱伝導率が大きいことが
要求されている。As a result, semiconductor package design
Since heat dissipation is taken into consideration, the heat dissipation is also required for the substrate on which the chip is mounted, and it is required that the substrate material has high thermal conductivity. Therefore, the substrate is required to have a thermal expansion coefficient close to that of the chip and a high thermal conductivity.
【０００４】従来の半導体パッケージとしては種々の構
成が提案されており、例えば基板に放熱フィンを付設し
た構成があり、放熱性を確保するためにクラッド板やＣ
ｕ−ＭｏあるいはＣｕ−Ｗ合金等の放熱基板用複合材料
（特開昭５９−１４１２４７号公報、特開昭６２−２９
４１４７号公報）が提案されている。前記複合体は熱膨
張係数、熱伝導度とも実用上満足すべき条件にかなって
いるが、Ｍｏ、Ｗ等が高密度であるため重くかつ脆いた
め、所定の寸法を得るには研削等の非塑性加工により成
形加工しなければならず、加工費が高く、歩留りが悪く
なっていた。Various structures have been proposed as conventional semiconductor packages, for example, there is a structure in which a radiation fin is attached to a substrate, and a clad plate or C is used to secure heat radiation.
Composite material for heat dissipation substrate such as u-Mo or Cu-W alloy (Japanese Patent Laid-Open Nos. 59-141247 and 62-29).
No. 4147) has been proposed. Although the thermal expansion coefficient and the thermal conductivity of the composite satisfy practical requirements, the composite is heavy and brittle because of high density of Mo, W, etc. Molding has to be performed by plastic working, resulting in high processing cost and poor yield.
【０００５】樹脂封止の半導体パッケージにおいては、
リードフレームがチップの外部への電気的接続の経路と
なるだけでなく、チップで発生する熱の放散経路として
重要な役割を果しているため、銅合金からなるリードフ
レームが多用されている。In a resin-sealed semiconductor package,
A lead frame made of a copper alloy is often used because the lead frame not only serves as a path for electrical connection to the outside of the chip but also plays an important role as a path for dissipating heat generated in the chip.
【０００６】ところが、高信頼性を要求される用途に
は、銅合金は、機械的強度が低く、チップとの熱膨張係
数の整合性が悪く、チップとアイランドとの接着界面の
剥離等が懸念されるため、チップとの熱膨張係数の整合
性から４２％Ｎｉ−Ｆｅ合金等の低熱膨張係数を有する
Ｎｉ−Ｆｅ系合金を採用した半導体パッケージも提案さ
れている。しかし、Ｎｉ−Ｆｅ系合金は熱伝導率が悪い
ため、現在の要求を満すだけの熱の放散性が得られてい
ない。また、チップと封止樹脂との熱膨張差は非常に大
きく、リードフレームとチップとの熱膨張係数の整合性
がよい場合でも、リードフレームと樹脂との間の整合性
が悪く、封止樹脂に発生するクラックを完全に防止する
ことは困難であった。However, for applications requiring high reliability, the copper alloy has low mechanical strength, poor matching of thermal expansion coefficient with the chip, and peeling of the adhesive interface between the chip and the island. Therefore, a semiconductor package using a Ni—Fe alloy having a low coefficient of thermal expansion such as 42% Ni—Fe alloy has been proposed in view of the matching of the coefficient of thermal expansion with the chip. However, since the Ni—Fe based alloy has a poor thermal conductivity, it has not been able to obtain heat dissipation enough to meet the current requirements. In addition, the difference in thermal expansion between the chip and the sealing resin is very large, and even if the matching of the thermal expansion coefficient between the lead frame and the chip is good, the matching between the lead frame and the resin is poor and the sealing resin It was difficult to completely prevent the cracks generated in the.
【０００７】さらに、セラミックス半導体パッケージで
は、Ａｌワイヤーボンディング及びガラス封着するため
に、リードフレームにはボンディングエリア及び封着位
置にＡｌを設けたＮｉ−Ｆｅ系合金が多用されている。
しかし、Ｎｉ−Ｆｅ系合金は上述の如く、熱放散性が悪
く、セラミックスとの熱膨張係数の整合性に問題があっ
た。Further, in the ceramics semiconductor package, in order to carry out Al wire bonding and glass sealing, the lead frame often uses a Ni--Fe alloy having Al in the bonding area and sealing position.
However, as described above, the Ni-Fe alloy has a poor heat dissipation property, and there is a problem in matching the coefficient of thermal expansion with ceramics.
【０００８】そこで、出願人は半導体パッケージにおけ
る上述の熱膨張係数および ／ または熱伝導率の整合
性の問題を解決するため、高熱膨張金属板に厚み方向に
所要の貫通孔を有する低熱膨張金属板を一体化し、前記
貫通孔から高熱膨張金属を低熱膨張金属板表面に露出さ
せた芯材の両面に高熱膨張金属箔を圧接し、これら金属
板の厚さ比や貫通孔面積比を適宜選定することにより、
熱膨張係数、熱伝導率を可変となし、受熱の均一化、熱
拡散効果の向上をはかり、表面微細孔がなくめっきやろ
う材など薄膜の被着性にすぐれた特徴を有する熱伝導複
合材料を提案（特願平２−４０５５０号）した。[0008] Therefore, in order to solve the above-mentioned problem of the matching of the thermal expansion coefficient and / or the thermal conductivity in the semiconductor package, the applicant has a low thermal expansion metal plate having a required through hole in the thickness direction in the high thermal expansion metal plate. And the high thermal expansion metal foil is pressure-welded to both surfaces of the core material in which the high thermal expansion metal is exposed on the surface of the low thermal expansion metal plate from the through hole, and the thickness ratio and the through hole area ratio of these metal plates are appropriately selected. By
The thermal expansion coefficient and thermal conductivity are variable, uniform heat reception and improvement of thermal diffusion effect are achieved, and there are no surface micropores, and the heat conductive composite material has excellent characteristics such as plating and brazing material adhesion to thin films. Was proposed (Japanese Patent Application No. 2-40550).
【０００９】[0009]
【発明が解決しようとする課題】上記の熱伝導複合材料
を得るには、まずプレスによる打ち抜き加工を行い小さ
な孔を多数個穿孔して網目状となし、焼鈍後に巻き取っ
たコバール板等の低熱膨張金属板コイルを、銅板などの
高熱膨張金属板コイルを巻き戻し時にその上方及び下方
より巻き戻して、冷間または温間で大径ロールにより圧
延接合し拡散焼鈍して芯材を得た後、さらにこの芯材の
上方及び下方より巻き戻したＣｕ、Ａｌ等の高熱膨張金
属箔を重ねて、冷間または温間で圧延ロールにより圧接
接合し拡散焼鈍して製造する。In order to obtain the above-mentioned heat-conductive composite material, first, a punching process by a press is performed to form a small number of small holes into a mesh shape, and low heat treatment such as Kovar plate wound after annealing is performed. After the expanded metal plate coil is rewound from the upper and lower sides of the high thermal expansion metal plate coil such as a copper plate, it is cold- or warm-rolled by a large-diameter roll and diffusion-annealed to obtain a core material. Further, a high thermal expansion metal foil of Cu, Al or the like unwound from the upper and lower sides of the core material is overlapped, cold- or warm-pressure-bonded by a rolling roll, and diffusion annealing is performed.
【００１０】この熱伝導複合材料の製造に際して、上記
の芯材にＣｕ、Ａｌ等の高熱膨張金属箔を重ねて冷間圧
接するが、接合強度を高めるために圧下力を大きくする
と、芯材表面のＣｕ、Ａｌ等の高熱膨張金属の露出面の
形状が円形あるいは楕円から長い楕円形状となり、選定
した高熱膨張金属と低熱膨張金属との表面積比が変わっ
て熱膨張係数および ／ または熱伝導率が変動し、ま
た熱膨張係数に異方性が生じる問題がある。In the production of this heat-conductive composite material, a high thermal expansion metal foil such as Cu or Al is superposed on the above core material and cold-pressed. However, if the pressing force is increased to increase the bonding strength, the surface of the core material is increased. The shape of the exposed surface of the high thermal expansion metal such as Cu or Al is changed from a circular shape or an elliptic shape to a long elliptical shape, and the surface area ratio between the selected high thermal expansion metal and low thermal expansion metal is changed to change the thermal expansion coefficient and / or the thermal conductivity. There is a problem that it fluctuates and the coefficient of thermal expansion becomes anisotropic.
【００１１】そこで、芯材表面にＣｕ、Ａｌ等の高熱膨
張金属箔を被覆するのに、上記の圧接法に代えてめっき
法にて行うことが考えられるが、めっき浴に浸漬した際
に芯材表面の高熱膨張金属と低熱膨張金属との境界にめ
っき液が残存し、これが後の拡散焼鈍時に気化してめっ
き膨れや剥がれを発生させる恐れがあり、まためっき工
程は概して煩雑で多大の製造時間を要する問題がある。Therefore, it is conceivable that the surface of the core material is coated with a high thermal expansion metal foil such as Cu or Al by a plating method instead of the above pressure welding method. The plating solution remains at the boundary between the high thermal expansion metal and the low thermal expansion metal on the surface of the material, and this may vaporize during the subsequent diffusion annealing to cause plating swelling or peeling. There is a problem that takes time.
【００１２】この発明は、受熱の均一化、熱拡散効果の
向上を図り、表面微細孔がなくめっきやろう材など薄膜
の被着性にすぐれ、チップや封止樹脂等の接着相手材の
熱膨張係数との整合性にすぐれかつ熱伝導性が良好で、
用途や目的に応じて熱膨張係数と熱伝導率を任意に選定
できる熱伝導材料の提供を目的とし、さらに、この熱伝
導材料の圧接による製造に際し、低熱膨張金属板に設け
た貫通孔形状を大きく変化させることなく、選定した熱
膨張係数および ／ または熱伝導率が得られ、また積
層される各高熱膨張金属と低熱膨張金属との接合強度を
向上させることが可能な熱伝導材料の製造方法の提供を
目的としている。The present invention achieves uniform heat reception and improvement of the heat diffusion effect, has excellent surface adherence to thin films such as plating and brazing materials without surface micropores, and heats the bonding partner materials such as chips and sealing resins. Excellent compatibility with expansion coefficient and good thermal conductivity,
The purpose of the present invention is to provide a heat-conducting material in which the coefficient of thermal expansion and thermal conductivity can be arbitrarily selected according to the application and purpose.Furthermore, when manufacturing this heat-conducting material by pressure welding, the through-hole shape provided in the low thermal expansion metal plate A method for producing a heat-conducting material, which can obtain a selected coefficient of thermal expansion and / or thermal conductivity without making a large change, and can improve the bonding strength between each of the high-thermal-expansion metal and the low-thermal-expansion metal to be laminated. Is intended to be provided.
【００１３】[0013]
【課題を解決するための手段】この発明は、厚み方向に
多数の貫通孔を設けた低熱膨張金属板の片面に常温また
は再結晶温度以上に加熱した高熱膨張金属板が圧接され
た後、他面にも高熱膨張金属板が圧接されたことを特徴
とする熱伝導材料である。According to the present invention, a low thermal expansion metal plate having a large number of through holes formed in the thickness direction is pressed against a high thermal expansion metal plate heated at room temperature or at a recrystallization temperature or higher, and thereafter It is a heat conductive material characterized in that a high thermal expansion metal plate is also pressure-welded to the surface.
【００１４】また、この発明は、厚み方向に多数の貫通
孔を設けた低熱膨張金属板の片面に常温または再結晶温
度以上に加熱した高熱膨張金属板を圧接して前記貫通孔
から高熱膨張金属を低熱膨張金属板表面に露出させて一
体化した後、低熱膨張金属板の他面に高熱膨張金属板を
圧接したことを特徴とする熱伝導材料の製造方法であ
る。Further, according to the present invention, a high thermal expansion metal plate heated at room temperature or at a recrystallization temperature or higher is pressed against one surface of a low thermal expansion metal plate having a large number of through holes formed in the thickness direction, and the high thermal expansion metal is passed through the through holes. Is exposed on the surface of the low thermal expansion metal plate to be integrated, and then the high thermal expansion metal plate is pressure-welded to the other surface of the low thermal expansion metal plate.
【００１５】また、この発明は、厚み方向に多数の貫通
孔を設けた低熱膨張金属板の片面に常温または再結晶温
度以上に加熱した高熱膨張金属板を圧接して前記貫通孔
から高熱膨張金属を低熱膨張金属板表面に露出させて一
体化した２層材を、常温または再結晶温度以上に加熱し
た高熱膨張金属板の両面に低熱膨張金属板側を当接させ
て圧接したことを特徴とする熱伝導材料並びにその製造
方法である。Further, according to the present invention, a high thermal expansion metal plate heated at room temperature or at a recrystallization temperature or higher is pressed against one surface of a low thermal expansion metal plate having a large number of through holes formed in the thickness direction, and the high thermal expansion metal is passed through the through holes. The two-layer material, which is exposed and integrated on the surface of the low-thermal-expansion metal plate, is pressure-welded by contacting the low-thermal-expansion metal plate side with both surfaces of the high-thermal-expansion metal plate heated to room temperature or above the recrystallization temperature. And a method for manufacturing the same.
【００１６】また、この発明は、厚み方向に多数の貫通
孔を設けた低熱膨張金属板の片面に常温または再結晶温
度以上に加熱した高熱膨張金属板を圧接して前記貫通孔
から高熱膨張金属を低熱膨張金属板表面に露出させて一
体化した後、低熱膨張金属板の他面に高熱膨張金属板を
圧接した３層材同士を、冷間または高熱膨張金属板の再
結晶温度以上に加熱して、直接あるいは常温または再結
晶温度以上に加熱した高熱膨張金属板を介在させて圧接
したことを特徴とする熱伝導材料並びにその製造方法で
ある。Further, according to the present invention, a high thermal expansion metal plate heated to room temperature or a recrystallization temperature or higher is pressed against one surface of a low thermal expansion metal plate having a large number of through holes formed in the thickness direction, and the high thermal expansion metal is introduced from the through holes. Is exposed on the surface of the low-thermal-expansion metal plate and integrated, and then the three-layer material in which the high-thermal-expansion metal plate is pressure-welded to the other surface of the low-thermal-expansion metal plate is heated cold or above the recrystallization temperature of the high-thermal-expansion metal plate. Then, the heat conductive material and the method for producing the same are characterized in that they are pressed against each other directly or through a high thermal expansion metal plate which is heated at room temperature or above the recrystallization temperature.
【００１７】さらにこの発明は、前記構成の熱伝導材料
において、高熱膨張金属板が、Ｃｕ、Ｃｕ合金、Ａｌ、
Ａｌ合金のうちいずれか、低熱膨張金属板が、Ｍｏ、３
０〜５０ｗｔ％Ｎｉを含有するＮｉ−Ｆｅ系合金、２５
〜３５ｗｔ％Ｎｉと４〜２０ｗｔ％Ｃｏを含有するＮｉ
−Ｃｏ−Ｆｅ系合金、Ｗのうちいずれか、高熱膨張金属
箔がＣｕ、Ｃｕ合金、Ａｌ、Ａｌ合金のうちいずれかか
らなり、実質的に５層材を構成する熱伝導材料のうち、
高熱膨張金属板の厚みｔ1、低熱膨張金属板の厚みｔ
2 、及び高熱膨張金属箔層の厚みｔ3 が、 ｔ1 ＝１ｔ2 〜５ｔ2 、ｔ3 ≦１／１０ ｔ2 ｔ1＋ｔ2＝０．１〜３０ｍｍ、ｔ3＝２〜１００μｍ を満足することが好ましい。Further, according to the present invention, in the heat conducting material having the above-mentioned structure, the high thermal expansion metal plate is Cu, Cu alloy, Al,
Any of the Al alloys, the low thermal expansion metal plate is Mo, 3
Ni-Fe based alloy containing 0 to 50 wt% Ni, 25
Ni containing ~ 35 wt% Ni and 4-20 wt% Co
-Co-Fe based alloy, any one of W, and the high thermal expansion metal foil is made of any one of Cu, Cu alloy, Al, Al alloy, and among the heat conductive materials that substantially constitute the five-layer material,
Thickness t 1 of high thermal expansion metal plate, thickness t of low thermal expansion metal plate
2 , and the thickness t 3 of the high thermal expansion metal foil layer satisfies t 1 = 1t 2 to 5t 2 , t 3 ≦ 1/10 t 2 t 1 + t 2 = 0.1 to 30 mm, and t 3 = 2 to 100 μm. Preferably.
【００１８】また、この発明は、前記構成の熱伝導材料
において、熱伝導材料の少なくとも一主面の所要位置
に、Ｃｕ、Ａｌ、Ｎｉ、Ｓｎのうちいずれかからなる金
属メッキを被着したことを特徴とする熱伝導材料であ
る。例えば、Ｃｕ、Ａｌ等の高熱膨張金属板の両主面
に、厚み方向に多数の貫通孔を設けて片面または両面に
高熱膨張金属箔を圧接したＮｉ−Ｆｅ系合金、Ｎｉ−Ｃ
ｏ−Ｆｅ系合金等の低熱膨張金属板を一体化して、さら
に最外層の高熱膨張金属箔の所要位置に上記の金属メッ
キやろう材の被着等の加工を施してプレス成形、積層な
どの加工を施すことにより、セラミックスパッケージ、
メタルパッケージなどのチップ搭載用放熱基板、リード
フレーム等、種々用途の熱伝導材料が得られる。Further, according to the present invention, in the heat conducting material having the above-mentioned structure, a metal plating made of any one of Cu, Al, Ni and Sn is deposited on a required position of at least one main surface of the heat conducting material. Is a heat-conducting material. For example, Ni-Fe alloy, Ni-C, in which a large number of through holes are provided in the thickness direction on both main surfaces of a high thermal expansion metal plate such as Cu or Al, and a high thermal expansion metal foil is pressure-welded to one surface or both surfaces, Ni-C.
A low thermal expansion metal plate such as an o-Fe alloy is integrated, and further, the above-mentioned metal plating or brazing material is applied to a required position of the outermost high thermal expansion metal foil to perform press molding, lamination, etc. By processing, ceramics package,
It is possible to obtain heat conductive materials for various uses such as heat dissipation boards for mounting chips such as metal packages and lead frames.
【００１９】[0019]
【作用】この発明による熱伝導材料は、厚み方向に多数
の貫通孔を設けた低熱膨張金属板の片面に常温または再
結晶温度以上に加熱した高熱膨張金属板を圧接した２層
材同士を高熱膨張金属板を介在させて圧接するか、ある
いは前記２層材の低熱膨張金属板面に高熱膨張金属板を
圧接した３層材をそのまま用いるか、さらに３層材同士
を直接あるいは適宜高熱膨張金属板を介在させて圧接し
た５層材構成であることを特徴とし、主に高熱膨張金属
板の厚さ比の選定により熱膨張係数を任意に変化させる
ことができ、芯材となる高熱膨張金属に高熱伝導性金属
を用い、貫通孔内に嵌入した高熱膨張金属と低熱膨張金
属板との同一平面上での露出面積比を適宜選定すること
により熱伝導率を任意に変化させ得るもので、高熱膨張
金属板と低熱膨張金属板の材質選定、組合せ、並びに前
記厚さ比と露出面積比の選定により、種々の用途、目的
に応じた熱膨張係数及び熱伝導率を設定でき、多種の熱
伝導材料を提供できる。The heat-conducting material according to the present invention comprises a low-thermal-expansion metal plate having a large number of through-holes formed in the thickness direction, and a high-thermal-expansion metal plate heated at room temperature or at a temperature higher than the recrystallization temperature on one surface of the low-heat-expansion metal plate. Pressure contact with an expanded metal plate interposed, or a three-layer material in which the high thermal expansion metal plate is pressed against the low thermal expansion metal plate surface of the two-layer material is used as it is, or the three layer materials are directly or appropriately used as a high thermal expansion metal. It is characterized by a five-layer material structure in which plates are pressure-welded with each other, and the thermal expansion coefficient can be arbitrarily changed mainly by selecting the thickness ratio of the high thermal expansion metal plate. Using a high thermal conductivity metal, the thermal conductivity can be arbitrarily changed by appropriately selecting the exposed area ratio on the same plane of the high thermal expansion metal and the low thermal expansion metal plate fitted in the through hole. High thermal expansion metal plate and low thermal expansion Genus plate material selection of the combination, as well as the selection of the exposure area ratio and the thickness ratio, a variety of applications, can set the thermal expansion coefficient and thermal conductivity according to the purpose, can provide a variety of thermally conductive material.
【００２０】また、この発明は製造法的には厚み方向に
多数の貫通孔を設けた低熱膨張金属板の片面に高熱膨張
金属板を圧接して２層材を出発素材として、高熱膨張金
属板や前記３層材を組み合せて圧接積層するため、得ら
れた熱伝導材料の外表面層の高熱膨張金属表面が均質で
すぐれた性状を有し、かつ低熱膨張金属との密着強度に
すぐれている。さらにこの発明による熱伝導材料は、基
本的に３層で構成されるため、欠陥発生率が少なく、ま
た製造工程が簡単で生産性よく安価に提供できる。Further, according to the present invention, the high thermal expansion metal plate is produced by press-contacting the high thermal expansion metal plate on one surface of the low thermal expansion metal plate having a large number of through holes in the thickness direction, and using the two-layer material as a starting material. Since the above three-layer materials are combined and pressed and laminated, the high thermal expansion metal surface of the outer surface layer of the obtained heat conductive material has a uniform and excellent property and has excellent adhesion strength with the low thermal expansion metal. .. Further, since the heat conductive material according to the present invention is basically composed of three layers, it has a low defect occurrence rate, a simple manufacturing process, and high productivity and can be provided at a low cost.
【００２１】この発明による熱伝導材料は、厚み方向に
多数の貫通孔を設けた低熱膨張金属板の一方面に、高熱
膨張金属板を圧接する際に、特に高熱膨張金属板を再結
晶温度以上に加熱することにより、またさらに前記２層
材、３層材同士の圧接に際して低熱膨張金属板に圧接し
た高熱膨張金属材料同士あるいは貫通孔から露出した高
熱膨張金属と介在させる高熱膨張金属板とで圧接される
ため、小さな圧下力でも高い圧接強度が得られ、低熱膨
張金属板に設けた貫通孔形状の変形が少なく、予め選定
した貫通孔内に嵌入した高熱膨張金属と低熱膨張金属板
との同一平面上での露出面積比（貫通孔面積比）を変動
させることなく、所定の熱膨張係数及び熱伝導率が得ら
れる。詳述すると、貫通孔を設けた低熱膨張金属板との
圧接に際して高熱膨張金属板を再結晶温度以上に加熱す
ることにより、小さな圧下力で高熱膨張金属が低熱膨張
金属板の貫通孔内に嵌入して低熱膨張金属他方表面に露
出して貫通孔内に空気溜まりなどの隙間を発生させるこ
となく、後に低熱膨張金属板の他面に圧接する高熱膨張
金属板と上記の加熱高熱膨張金属板の同材質の圧接効果
とあいまって、より小さな圧下力で高い圧接強度が得ら
れて圧延率を小さくでき、上記の露出面積比の変動が少
なくなる。また、厚み方向に多数の貫通孔を設けた低熱
膨張金属板に加熱高熱膨張金属板を圧接した２層材同士
の圧接、または２層材の低熱膨張金属板に高熱膨張金属
板を圧接する際、さらに得られた３層材同士の直接また
は高熱膨張金属板を介在させての圧接の際、高熱膨張金
属板を再結晶温度以上に加熱することにより、高熱膨張
金属同士の拡散一体化が可能で圧接強度が極めてすぐれ
ている。さらに、高熱膨張金属の流動性がよく貫通孔へ
の回り込みが良好となり、後に圧接する最外層の高熱膨
張金属板厚みを高熱膨張金属材料をめっきした場合と同
程度まで薄くすることができる。The heat-conducting material according to the present invention, when the high thermal expansion metal plate is pressed against one surface of the low thermal expansion metal plate having a large number of through holes formed in the thickness direction, the high thermal expansion metal plate is heated to a temperature not lower than the recrystallization temperature. By heating the two-layer material and the three-layer material to each other, the high thermal expansion metal material pressed against the low thermal expansion metal plate or the high thermal expansion metal plate interposed with the high thermal expansion metal exposed from the through hole. Due to the pressure contact, high pressure contact strength can be obtained even with a small pressing force, the deformation of the through hole shape provided in the low thermal expansion metal plate is small, and the high thermal expansion metal and the low thermal expansion metal plate fitted in the preselected through hole are The predetermined thermal expansion coefficient and thermal conductivity can be obtained without changing the exposed area ratio (through hole area ratio) on the same plane. More specifically, when the high thermal expansion metal plate is heated above the recrystallization temperature during pressure contact with the low thermal expansion metal plate provided with the through holes, the high thermal expansion metal is inserted into the through holes of the low thermal expansion metal plate with a small rolling force. Then, the high thermal expansion metal plate exposed to the other surface of the low thermal expansion metal and generating a gap such as an air pool in the through hole, and the high thermal expansion metal plate and the above-mentioned heating high thermal expansion metal plate that are pressed against the other surface of the low thermal expansion metal plate later. Combined with the pressure welding effect of the same material, a higher rolling contact strength can be obtained with a smaller rolling force, the rolling ratio can be reduced, and the above variation of the exposed area ratio can be reduced. In addition, when two layers of low-thermal-expansion metal plates having a large number of through-holes formed in the thickness direction are pressure-welded with a high-thermal-expansion metal plate, or when two-layer low-thermal-expansion metal plates are pressed against each other. In addition, when pressing the obtained three-layer materials directly or with a high thermal expansion metal plate interposed, by heating the high thermal expansion metal plate above the recrystallization temperature, diffusion integration of the high thermal expansion metals is possible. The pressure contact strength is extremely good. Further, the high thermal expansion metal has a good fluidity and can easily flow into the through hole, and the thickness of the outermost layer of the high thermal expansion metal plate to be pressed later can be reduced to the same level as when the high thermal expansion metal material is plated.
【００２２】この発明による熱伝導材料は、低熱膨張金
属板の全面あるいは部分的に厚み方向の貫通孔を所要間
隔、パターンで配置し、例えば貫通孔の孔寸法、形状、
配置パターン等を種々変えたり、圧延時の変形を考慮し
て厚み方向に貫通あるいは貫通しない切り目を設けるな
ど、芯材の金属板の厚さ比および ／ または低熱膨張
金属板表面に露出した高熱膨張金属と低熱膨張金属との
表面積比を選定するなどの手段を選定組み合せることに
より、材料の全体あるいは部分的に、用途、目的に応じ
た熱膨張係数及び熱伝導率を設定でき、例えば、所要の
金属、セラミックス、Ｓｉ等の半導体、プラスチックス
等の相手材の熱膨張係数との整合性を図り、かつ所要の
熱伝導性を有する材料が得られる。In the heat conductive material according to the present invention, through-holes in the thickness direction are arranged in the entire surface or a part of the low thermal expansion metal plate in a required interval and pattern.
The thickness ratio of the core metal plate and / or the low thermal expansion exposed on the surface of the metal plate By selecting and combining means such as selecting the surface area ratio of metal and low thermal expansion metal, it is possible to set the thermal expansion coefficient and the thermal conductivity according to the application and purpose, in whole or in part, of the material. The metal, the ceramics, the semiconductor such as Si, the compatibility with the thermal expansion coefficient of the mating material such as plastics, and the material having the required thermal conductivity can be obtained.
【００２３】好ましい実施態様 この発明において、高熱膨張金属板は圧接にて低熱膨張
金属板の貫通孔内に圧入充填されることから、Ｃｕ、Ｃ
ｕ合金、Ａｌ、Ａｌ合金等の展延伸性に富み、かつ高い
熱伝導性を有する材料を用いることが好ましい。また、
低熱膨張金属板には、展延性のあるＭｏ、３０〜５０ｗ
ｔ％ Ｎｉを含有するＮｉ−Ｆｅ系合金、２５〜３５ｗ
ｔ％ Ｎｉ、４〜２０ｗｔ％ Ｃｏを含有するＮｉ−Ｃ
ｏ−Ｆｅ系合金、Ｗなどを用いることができる。最外層
の高熱膨張金属板には、Ｃｕ、Ｃｕ合金、Ａｌ、Ａｌ合
金などの材料が選定でき、用途やさらに被着する薄膜層
材質を考慮して、芯材の高熱膨張金属板と同材質あるい
は異材質を適宜選定するとよい。Preferred Embodiment In the present invention, since the high thermal expansion metal plate is press-fitted into the through hole of the low thermal expansion metal plate by pressure welding, Cu, C
It is preferable to use a material that is rich in extensibility and has high thermal conductivity, such as u alloy, Al, and Al alloy. Also,
The low thermal expansion metal plate has Mo, 30 to 50w with ductility.
Ni-Fe based alloy containing t% Ni, 25-35w
Ni-C containing t% Ni, 4 to 20 wt% Co
An o-Fe based alloy, W or the like can be used. Materials such as Cu, Cu alloys, Al, and Al alloys can be selected for the outermost high-thermal-expansion metal plate, and the same material as the high-thermal-expansion metal plate of the core material can be selected in consideration of the application and the material of the thin film layer to be adhered. Alternatively, a different material may be appropriately selected.
【００２４】さらに用途などに応じて、ろう付け性や耐
食性を向上させるため、あるいはＡｕ、Ａｇメッキの被
着性を向上させるため、Ｃｕ、Ａｌ、Ｎｉ、Ｓｎなどを
メッキ、蒸着、イオンプレーティング、ＣＶＤ（ｃｈｅ
ｍｉｃａｌ ｖａｐｏｒ ｄｅｐｏｓｉｔｉｏｎ）等の
公知のコーティング技術によって被着する他、はんだ、
Ａｇろう材、セラミックス、ガラス層などを被覆、ある
いは所要位置に被着することができる。Further, in order to improve brazing property and corrosion resistance, or to improve adherence of Au or Ag plating, Cu, Al, Ni, Sn or the like is plated, vapor-deposited or ion-plated depending on the application. , CVD (che
In addition to depositing by a known coating technique such as medical vapor deposition), solder,
It can be coated with Ag brazing material, ceramics, a glass layer, or the like, or can be applied at a required position.
【００２５】また、低熱膨張金属板の板厚み方向の貫通
孔は、プレス打ち抜き等の機械加工のほか、エッチング
等の化学的加工も採用でき、貫通孔間隔が狭いほうが製
品のばらつきを低減する上で有利であり、通常３ｍｍ以
下、好ましくは１ｍｍ以下、さらに好ましくは０．５ｍ
ｍ以下であり、貫通孔形状も横断面が円、多角形状等、
縦断面がストレート、テーパー等種々形状が採用でき、
テーパー状の場合、貫通孔内への圧入を容易にしかつ接
合強度を高めることができる。さらに、当該低熱膨張金
属板の板厚み方向の貫通孔は、圧接、圧延後に高熱膨張
金属板が充填される所要の貫通孔になればよく、例え
ば、圧延前の低熱膨張金属板に、板厚みの所要方向に貫
通するかあるいは貫通直前の切り目を入れたり、該金属
板の両面から切り目方向や種々の切り目の形状を変えて
入れたりして、上述の貫通孔配置となるよう種々選定で
き、切り目の形状も、− ＋ ＜ など種々の形状が採
用でき、また、板厚みの所要方向に例えば、三角錐の如
き楔状の切り目を入れることもできる。またこの発明に
おいて、圧延率は全て冷間の場合は６０％程度必要であ
り、高熱膨張金属板を加熱する場合は高熱膨張金属同士
の結合が結晶学的にも極めて好ましい状態となり２０％
程度まで少なくできるが、３０〜５０％の圧延率が好ま
しい。The through-holes in the plate thickness direction of the low thermal expansion metal plate can be subjected to mechanical processing such as press punching, as well as chemical processing such as etching. Is advantageous, and is usually 3 mm or less, preferably 1 mm or less, more preferably 0.5 m.
m or less, and the through-hole shape has a circular cross section, a polygonal shape, etc.
Various shapes such as straight vertical section and taper can be adopted.
In the case of a taper shape, it is possible to facilitate press fitting into the through hole and increase the bonding strength. Furthermore, the through-holes in the plate thickness direction of the low thermal expansion metal plate may be pressure-contacted and may be the required through-holes to be filled with the high thermal expansion metal plate after rolling, for example, the low thermal expansion metal plate before rolling, the plate thickness Through the required direction or make a cut immediately before the penetration, or by changing the cut direction or the shape of various cuts from both sides of the metal plate, various selections can be made to have the above-mentioned through hole arrangement, Various shapes such as − + <may be adopted for the cuts, and wedge-shaped cuts such as triangular pyramids may be formed in the required direction of the plate thickness. Further, in the present invention, the rolling rate is required to be about 60% in the case of all cold rolling, and in the case of heating the high thermal expansion metal plate, the bond between the high thermal expansion metals becomes extremely preferable in terms of crystallography and is 20%.
Although it can be reduced to some extent, a rolling ratio of 30 to 50% is preferable.
【００２６】図面に基づく発明の開示 以下に図面に基づいてこの発明による熱伝導材料とその
製造方法を詳述する。図１に示すこの発明の熱伝導材料
は、高熱膨張金属板として銅板を、低熱膨張金属板とし
てコバール（Ｆｅ−Ｃｏ−Ｎｉ合金）板を用いた３層材
の例であり、厚み方向に多数の貫通孔２を有するコバー
ル板１の両面に銅板３が圧接された構成からなる。Disclosure of the Invention Based on the Drawings The heat conductive material according to the present invention and the manufacturing method thereof will be described in detail below with reference to the drawings. The heat conductive material of the present invention shown in FIG. 1 is an example of a three-layer material using a copper plate as a high thermal expansion metal plate and a Kovar (Fe-Co-Ni alloy) plate as a low thermal expansion metal plate, and has a large number in the thickness direction. The copper plate 3 is pressed against both surfaces of the Kovar plate 1 having the through holes 2.
【００２７】低熱膨張金属のコバール板１には板厚み方
向に同一寸法の貫通孔２が形成されて、コバール板１の
一方面に圧接した高熱膨張金属の銅板３の銅材が貫通孔
２を嵌入してコバール板１の他面に銅露出面４を形成
し、同面に圧接した銅板６と拡散一体化している。ま
た、ここでは板厚み方向に同一寸法の貫通孔２が形成さ
れているが、孔寸法が表裏で異なるようにテーパー状と
しかつ隣接孔が孔寸法の大小の組合せとなるように配置
することもできる。Through holes 2 of the same size are formed in the Kovar plate 1 of low thermal expansion metal in the plate thickness direction, and the copper material of the copper plate 3 of high thermal expansion metal pressed against one surface of the Kovar plate 1 forms the through holes 2. A copper exposed surface 4 is formed on the other surface of the Kovar plate 1 by being fitted therein, and the copper exposed surface 4 is diffused and integrated with the copper plate 6 pressed against the same surface. Further, here, the through holes 2 having the same size are formed in the plate thickness direction, but the holes may be tapered so that the hole sizes are different between the front and back, and the adjacent holes may be arranged so as to be a combination of large and small hole sizes. it can.
【００２８】この３層材において、コバール板１の両面
に圧接される銅板３，６の各々の厚み及び銅露出面４の
比率や分散状態等を選定することにより、各主面の熱的
特性を要求される特性に近似させることができる。さら
に、この３層材をそのまま利用する場合に銅板３の最外
層に、用途やさらに被着する薄膜層材質を考慮してＣ
ｕ、Ｃｕ合金、Ａｌ、Ａｌ合金などを選定でき、受熱の
均一化、熱拡散効果、相手材との接合性、薄膜の被着性
の向上効果が得られる。In this three-layer material, by selecting the thickness of each of the copper plates 3 and 6 pressed against both sides of the Kovar plate 1, the ratio of the copper exposed surface 4, the dispersion state, etc., the thermal characteristics of each main surface are selected. Can be approximated to the required characteristics. Furthermore, in the case where the three-layer material is used as it is, C is added to the outermost layer of the copper plate 3 in consideration of the use and the material of the thin film layer to be adhered.
u, Cu alloy, Al, Al alloy, etc. can be selected, and uniform heat reception, thermal diffusion effect, bondability with a mating material, and improvement of thin film adherence can be obtained.
【００２９】上述の銅板とコバール板の３層材熱伝導材
料を製造するには、図２に示すように、まず所要寸法、
厚みのコバール板１をコイルから巻き戻して、プレス機
１０による打ち抜き加工を行い、例えば小さな孔を多数
個穿孔して網目状となしたのち、ルーパー装置にて所要
長さがストックされ、さらにコバール板１の下面にコイ
ルから巻き戻されて再結晶温度以上に加熱炉１１にて加
熱した銅板３を圧接機１２で圧接して２層材５を得る。
さらに、２層材５のコバール板１の上面にコイルから巻
き戻された別の銅板６を圧接機１３で圧接することによ
り、コバール板１の両面に銅板３，６を圧接した３層材
７を得る。なお、コバール板１は先にプレス機１０によ
る打ち抜き加工を行い、例えば、小さな孔を多数個穿孔
して網目状となした後焼鈍し、さらに表面処理を施して
コイルに巻き取っておくことができる。また、２層材５
への別の銅板６の圧接に際して、銅板６を再結晶温度以
上に加熱しておくことにより、銅材の拡散一体化が得ら
れる。In order to manufacture the above-mentioned three-layer heat conductive material of copper plate and Kovar plate, as shown in FIG.
The thick Kovar plate 1 is unwound from the coil and punched by the press machine 10. For example, a small number of small holes are punched to form a mesh, and then the required length is stocked by the looper device. The copper plate 3 rewound from the coil on the lower surface of the plate 1 and heated in the heating furnace 11 to a temperature equal to or higher than the recrystallization temperature is pressed by the pressing machine 12 to obtain the two-layer material 5.
Further, another copper plate 6 unwound from the coil is pressed onto the upper surface of the Kovar plate 1 of the two-layer material 5 by the pressure welding machine 13, so that the copper plates 3 and 6 are pressure-welded to both surfaces of the Kovar plate 1. To get The Kovar plate 1 may be punched by the press machine 10 first, for example, a number of small holes may be punched to form a mesh, which is then annealed, and then surface-treated to be wound into a coil. it can. Also, two-layer material 5
When another copper plate 6 is pressed against the copper plate 6, the copper plate 6 is heated to a temperature equal to or higher than the recrystallization temperature, whereby diffusion integration of the copper material can be obtained.
【００３０】銅板とコバール板の３層材熱伝導材料は、
貫通孔を有するコバール板１への銅板３の圧接に際し
て、銅板３を再結晶温度以上に加熱すれば、小さな圧下
力で銅板３がコバール板１の貫通孔２内に嵌入してコバ
ール板１の他表面に露出し、高い圧接強度が得られ、コ
バール板１に設けた貫通孔形状の変形が少なく、予め選
定したコバール板１表面における銅露出面４とコバール
板１との露出面積比を変動させることなく、熱膨張に異
方性を生じることなく、所定の熱膨張係数及び熱伝導率
が得られる。The three-layer heat conductive material of copper plate and Kovar plate is
When the copper plate 3 is pressed against the Kovar plate 1 having a through hole, if the copper plate 3 is heated to a temperature higher than the recrystallization temperature, the copper plate 3 is fitted into the through hole 2 of the Kovar plate 1 with a small reduction force, and Exposed to other surface, high pressure contact strength is obtained, deformation of through-hole shape provided in Kovar plate 1 is small, and the exposed area ratio between copper exposed surface 4 and Kovar plate 1 on the surface of Kovar plate 1 selected in advance varies. The desired thermal expansion coefficient and thermal conductivity can be obtained without causing anisotropy in thermal expansion.
【００３１】また、この３層材７は、上述の如く製造工
程が簡単で、欠陥発生率が極めて少なく、このまま基板
やリードフレームなどに利用するほか、図３のＢに示す
如く、３層材７同士をそのままあるいは銅板３，６を再
結晶温度以上に加熱して圧接することにより、銅板とコ
バール板の５層材熱伝導材料を得ることができる。ま
た、３層材７同士の間に銅板などの常温または再結晶温
度以上に加熱した高熱膨張金属板を介在させて圧接する
ことにより５層材熱伝導材料を得ることができる。The three-layer material 7 has a simple manufacturing process as described above and has a very low defect occurrence rate, and is used as it is for a substrate, a lead frame and the like, and as shown in FIG. A 5-layer heat conductive material of a copper plate and a Kovar plate can be obtained by pressing 7 as they are or by heating the copper plates 3 and 6 to a recrystallization temperature or higher and press-contacting each other. Further, a five-layer heat conductive material can be obtained by interposing between the three-layer materials 7 with a high thermal expansion metal plate such as a copper plate heated at room temperature or a recrystallization temperature or higher and press-contacting each other.
【００３２】さらに、コバール板１の一方面に銅板３を
圧接して、他面に銅露出面４を有する図１の工程で最初
に得た２層材５を用いて、図３のＡに示す如く、コバー
ル板１の銅露出面４同士を常温または再結晶温度以上に
加熱した高熱膨張金属板８を介在させて圧接することに
より、銅板とコバール板の５層材熱伝導材料を得ること
ができる。なお、上記の２層材５を得るのに、圧接時に
銅板３を再結晶温度以上に加熱したが、常温で圧接して
得た後に低温焼鈍を施し、さらに常温または再結晶温度
以上に加熱した高熱膨張金属板８を介在させて圧接する
こともできる。Further, by using the two-layer material 5 first obtained in the step of FIG. 1 in which the copper plate 3 is pressure-contacted to one surface of the Kovar plate 1 and the copper exposed surface 4 is on the other surface, the A-layer of FIG. As shown in the figure, the exposed copper surfaces 4 of the Kovar plate 1 are pressed against each other with a high thermal expansion metal plate 8 heated at room temperature or higher than the recrystallization temperature interposed therebetween to obtain a five-layer heat conductive material of the copper plate and the Kovar plate. You can In order to obtain the above-mentioned two-layer material 5, the copper plate 3 was heated to a recrystallization temperature or higher at the time of pressure welding, but after being pressure-bonded at room temperature, it was subjected to low temperature annealing and further heated to a room temperature or a recrystallization temperature or higher. It is also possible to press-contact with the high thermal expansion metal plate 8 interposed.
【００３３】前述の３層材７と同様のように、得られた
多層材熱伝導材料は、２層材５または３層材７のコバー
ル板１、銅板３，６、介在させる高熱膨張金属板８の各
々の厚み及び銅露出面４の比率や分散状態等を選定する
ことにより、各主面の熱的特性を要求される特性に近似
させることできる。As in the case of the above-mentioned three-layer material 7, the obtained multilayer material heat-conducting material includes the Kovar plate 1, the copper plates 3 and 6 of the two-layer material 5 or the three-layer material 7, and the high thermal expansion metal plate to be interposed. By selecting the respective thicknesses of No. 8 and the ratio of copper exposed surface 4, the dispersion state, etc., the thermal characteristics of each main surface can be approximated to the required characteristics.
【００３４】上述の圧接に際して、高熱膨張金属材の加
熱雰囲気並びに圧接雰囲気は、非酸化性雰囲気が好まし
く、Ｎ2中、Ａｒ中、Ｈ2中あるいはこれらの混合ガス雰
囲気やアンモニア分解ガス、プロパン燃焼ガス（ＤＸ）
ガス等を用いることができる。また、加熱装置は使用す
る高熱膨張金属材材質に応じて適宜選定するが、管状
炉、光ビーム加熱装置、レーザー加熱装置、高周波加熱
装置、プラズマ加熱装置等を採用することができる。高
熱膨張金属材の加熱温度は、選定した材料の再結晶温度
以上で融点未満の温度範囲から適宜選定するが、融点よ
り１００℃程度低い温度から融点未満が好ましく、銅、
銅合金材の場合は、９５０〜１０５０℃、Ａｌ、Ａｌ合
金材の場合は、５５０〜６５０℃、Ａｇ、Ａｇ合金材の
場合は、８００〜９００℃である。In the above pressure welding, the heating atmosphere and the pressure welding atmosphere of the high thermal expansion metal material are preferably non-oxidizing atmospheres, such as N 2 , Ar, H 2 or a mixed gas atmosphere thereof, ammonia decomposition gas, propane combustion. Gas (DX)
Gas or the like can be used. Further, the heating device is appropriately selected according to the material of the high thermal expansion metal material used, but a tubular furnace, a light beam heating device, a laser heating device, a high frequency heating device, a plasma heating device or the like can be adopted. The heating temperature of the high thermal expansion metal material is appropriately selected from the temperature range above the recrystallization temperature of the selected material and below the melting point, but a temperature lower than the melting point by about 100 ° C. and below the melting point is preferable, copper,
The temperature is 950 to 1050 ° C. in the case of copper alloy material, 550 to 650 ° C. in the case of Al and Al alloy materials, and 800 to 900 ° C. in the case of Ag and Ag alloy materials.
【００３５】[0035]
【実施例】板厚０．２５ ｍｍ、板幅５０ｍｍのコバー
ル板（２９Ｎｉ−１６Ｃｏ−Ｆｅ合金）に、孔径１．０
ｍｍ、圧延方向孔間隔２．０ｍｍ、幅方向孔間隔２．０
ｍｍで多数の穿孔を施し、 ９００℃で焼鈍してワイヤ
ーブラッシングした後コイルに巻き取った。なお、コバ
ール板の３０〜２００°Ｃにおける平均熱膨張係数は
５．２×１０-6／°Ｃであった。[Example] A Kovar plate (29Ni-16Co-Fe alloy) having a plate thickness of 0.25 mm and a plate width of 50 mm was used, and the hole diameter was 1.0.
mm, rolling direction hole spacing 2.0 mm, width direction hole spacing 2.0
A large number of holes were drilled in mm, annealed at 900 ° C., wire brushed, and then wound into a coil. The average thermal expansion coefficient of the Kovar plate at 30 to 200 ° C is
It was 5.2 × 10 −6 / ° C.
【００３６】ワイヤーブラッシングした後、Ｎ2雰囲気
で９５０℃に加熱した板厚０．５ｍｍ、板幅５０ｍｍの
Ｃｕ板を、前記コイルから巻き戻したコバール板に重ね
て、Ｎ2雰囲気中の圧接機により圧接して、コバール板
の貫通孔中に銅が侵入し、銅箔表面の所要位置に銅板が
部分的に露出して一体化した板厚０．３ｍｍ の２層材
を得た。得られた熱伝導材の主面におけるＣｕ露出面は
圧延方向に略円形となり、孔間隔は圧延方向に２．０ｍ
ｍであり、コバール板に対するＣｕ露出面の比率は３５
％であった。After wire brushing, a Cu plate having a plate thickness of 0.5 mm and a plate width of 50 mm heated to 950 ° C. in an N 2 atmosphere was placed on a Kovar plate unwound from the coil, and a pressure welding machine in an N 2 atmosphere was used. Then, copper was infiltrated into the through hole of the Kovar plate, and the copper plate was partially exposed at a required position on the surface of the copper foil to obtain an integrated two-layer material having a plate thickness of 0.3 mm 2. The exposed Cu surface on the main surface of the obtained heat conductive material was substantially circular in the rolling direction, and the hole spacing was 2.0 m in the rolling direction.
m, and the ratio of the exposed Cu surface to the Kovar plate is 35.
%Met.
【００３７】さらに、Ｃｕ露出面側に板厚０．０５ｍ
ｍ、板幅５０ｍｍのＣｕ箔を圧接して、表層に２０μｍ
のＣｕ層を有し、板厚み０．３ｍｍの３層材を得た。圧
延率は１５％であった。Ｃｕ板の３０〜２００°Ｃにお
ける平均熱膨張係数は１７．２×１０-6／°Ｃであっ
た。得られた材料の厚み方向の熱伝導率は２３０ｗ／ｍ
・Ｋ、及び各主面における熱膨張係数は８×１０-6／℃
であった。Further, a plate thickness of 0.05 m on the Cu exposed surface side
20 μm on the surface layer by pressing a Cu foil with a width of 50 m and a plate width of 50 mm
A Cu layer having a thickness of 0.3 mm was obtained. The rolling rate was 15% . The average thermal expansion coefficient of the Cu plate at 30 to 200 ° C was 17.2 x 10 -6 / ° C. The thermal conductivity of the obtained material in the thickness direction is 230 w / m.
・ K and the coefficient of thermal expansion on each main surface are 8 × 10 -6 / ℃
Met.
【００３８】得られた３層の熱伝導材料を１０００℃、
５分間、水素雰囲気焼鈍後、公知の方法にてリードフレ
ームに加工し、半導体パッケージを作製したところ、チ
ップとアイランドとの接着界面の剥離や封止樹脂のクラ
ック等が発生することなく、また、従来の銅合金を用い
たリードフレームに近似する良好な熱放散性が得られ
た。The obtained three layers of heat conductive material were heated at 1000 ° C.
After annealing for 5 minutes in a hydrogen atmosphere, it was processed into a lead frame by a known method to manufacture a semiconductor package. As a result, peeling of an adhesive interface between a chip and an island or cracks in a sealing resin did not occur, and A good heat dissipation property similar to that of a lead frame using a conventional copper alloy was obtained.
【００３９】前記３層の熱伝導材料の２枚の間にＮ2雰
囲気で９５０℃に加熱した板厚０．２５ ｍｍ、板幅５
０ｍｍのＣｕ板を介在させて、同雰囲気中で圧接積層し
て全体厚み０．８ｍｍの放熱基板となした。上記放熱基
板を用いて、セラミックスパッケージを作製したとこ
ろ、良好な熱放散性が得られ、熱的整合性も優れている
ことを確認できた。A plate having a thickness of 0.25 mm and a plate width of 5 heated to 950 ° C. in an N 2 atmosphere between two sheets of the three layers of heat conductive material.
A Cu plate of 0 mm was interposed and pressure-bonded and laminated in the same atmosphere to form a heat dissipation substrate having an overall thickness of 0.8 mm. When a ceramic package was manufactured using the heat dissipation substrate, it was confirmed that good heat dissipation was obtained and thermal compatibility was also excellent.
【００４０】[0040]
【発明の効果】この発明による熱伝導材料は、厚み方向
に多数の貫通孔を設けた低熱膨張金属板の片面に常温ま
たは再結晶温度以上に加熱した高熱膨張金属板を圧接し
た２層材同士を高熱膨張金属板を介在させて圧接する
か、あるいは前記２層材の低熱膨張金属板面に高熱膨張
金属板を圧接した３層材をそのまま用いるか、さらに３
層材同士を直接あるいは適宜高熱膨張金属板を介在させ
て圧接することにより、接合強度を高くでき、選定した
これら金属板の厚さ比や貫通孔面積比を変化させること
なく、熱膨張係数、熱伝導率を任意に変化させることが
でき、金属、セラミックス、Ｓｉ等の半導体、プラスチ
ックス等の被着相手材との熱膨張係数の整合性と良好な
熱伝導性を両立でき、さらに受熱の均一化、熱拡散効果
の向上をはかり、表面微細孔がなくめっきやろう材など
薄膜の被着性にすぐれており、半導体チップ搭載用放熱
基板やリードフレーム用材料に最適な熱伝導材料であ
る。The heat conducting material according to the present invention is a two-layer material in which a high thermal expansion metal plate heated at room temperature or at a recrystallization temperature or higher is pressed against one surface of a low thermal expansion metal plate having a large number of through holes formed in the thickness direction. Is pressed with a high thermal expansion metal plate interposed, or a three-layer material in which the high thermal expansion metal plate is pressed against the low thermal expansion metal plate surface of the two-layer material is used as it is, or further 3
By joining the layered materials directly or by appropriately interposing a high thermal expansion metal plate therebetween, the joining strength can be increased, and the thermal expansion coefficient, without changing the thickness ratio or through hole area ratio of these selected metal plates, The thermal conductivity can be changed arbitrarily, and the matching of the thermal expansion coefficient with the adherend material such as metal, ceramics, semiconductor such as Si, plastics and the like and good thermal conductivity can both be achieved. With uniformization and improved heat diffusion effect, it has excellent surface adhesion to thin films such as plating and brazing materials without surface micropores, and it is the most suitable heat conduction material for semiconductor chip mounting heat dissipation board and lead frame material. ..
【図１】この発明による熱伝導材料の一部破断斜視説明
図である。FIG. 1 is a partially cutaway perspective view of a heat conductive material according to the present invention.
【図２】この発明による熱伝導材料素材を製造するため
の設備例を示す斜視説明図である。FIG. 2 is a perspective explanatory view showing an example of equipment for manufacturing a heat conductive material according to the present invention.
【図３】Ａ，Ｂともにこの発明による多層熱伝導材料の
構成と工程を示す縦断説明図である。3A and 3B are longitudinal explanatory views showing the structure and process of the multilayer heat conductive material according to the present invention in both A and B.
１ コバール板 ２ 貫通孔 ３，６ 銅板 ４ 銅露出面 ５ ２層材 ７ ３層材 ８ 高熱膨張金属板 １０ プレス 機 １１ 加熱装置 １２，１３ 圧接ロール 1 Kovar Plate 2 Through Hole 3,6 Copper Plate 4 Copper Exposed Surface 5 2 Layer Material 7 3 Layer Material 8 High Thermal Expansion Metal Plate 10 Press Machine 11 Heating Device 12,13 Pressure Roll
Claims (6)
張金属板の片面に常温または再結晶温度以上に加熱した
高熱膨張金属板が圧接された後、他面にも高熱膨張金属
板が圧接されたことを特徴とする熱伝導材料。1. A low thermal expansion metal plate having a large number of through holes formed in the thickness direction is pressed against a high thermal expansion metal plate heated to room temperature or a recrystallization temperature or higher, and then the high thermal expansion metal plate is also attached to the other surface. A heat conductive material characterized by being pressed.
張金属板の片面に常温または再結晶温度以上に加熱した
高熱膨張金属板を圧接した２層材同士の低熱膨張金属板
側が、常温または再結晶温度以上に加熱した高熱膨張金
属板を介在させて圧接一体化されたことを特徴とする熱
伝導材料。2. The low-thermal-expansion metal plate side of the two-layer material in which one surface of the low-thermal-expansion metal plate provided with a large number of through holes in the thickness direction is pressed against a high-thermal-expansion metal plate heated to room temperature or a recrystallization temperature or higher is the normal temperature. Alternatively, a heat-conducting material is characterized in that it is integrated by pressure welding with a high thermal expansion metal plate heated above the recrystallization temperature interposed.
張金属板の片面に常温または再結晶温度以上に加熱した
高熱膨張金属板を圧接し他面に高熱膨張金属板を圧接し
た３層材同士が、直接あるいは常温または再結晶温度以
上に加熱した高熱膨張金属板を介在させて圧接一体化さ
れたことを特徴とする熱伝導材料。3. A three-layer structure in which a high-thermal-expansion metal plate heated to room temperature or a recrystallization temperature or higher is pressure-contacted to one surface of a low-thermal-expansion metal plate provided with a large number of through holes in the thickness direction, and a high-thermal-expansion metal plate is pressure-contacted to the other surface. A heat-conducting material, characterized in that the materials are pressure-welded and integrated directly or through a high-thermal expansion metal plate heated to room temperature or above a recrystallization temperature.
張金属板の片面に常温または再結晶温度以上に加熱した
高熱膨張金属板を圧接して前記貫通孔から高熱膨張金属
を低熱膨張金属板表面に露出させて一体化した後、低熱
膨張金属板の他面に高熱膨張金属板を圧接したことを特
徴とする熱伝導材料の製造方法。4. A low-thermal-expansion metal which is a low-thermal-expansion metal plate having a large number of through-holes formed in its thickness direction A method for producing a heat-conducting material, which comprises exposing the surface of the plate and integrating it, and then pressing a high-thermal expansion metal plate against the other surface of the low-thermal expansion metal plate.
張金属板の片面に常温または再結晶温度以上に加熱した
高熱膨張金属板を圧接して前記貫通孔から高熱膨張金属
を低熱膨張金属板表面に露出させて一体化した２層材
を、常温または再結晶温度以上に加熱した高熱膨張金属
板の両面に低熱膨張金属板側を当接させて圧接したこと
を特徴とする熱伝導材料の製造方法。5. A low thermal expansion metal plate is formed by pressing a high thermal expansion metal plate heated at room temperature or at a recrystallization temperature or higher onto one surface of a low thermal expansion metal plate having a large number of through holes formed in the thickness direction. A two-layer material exposed and integrated on the surface of the plate is pressed against the both sides of a high thermal expansion metal plate heated at room temperature or at a recrystallization temperature or higher by contacting the low thermal expansion metal plate side. Manufacturing method.
張金属板の片面に常温または再結晶温度以上に加熱した
高熱膨張金属板を圧接して前記貫通孔から高熱膨張金属
を低熱膨張金属板表面に露出させて一体化した後、低熱
膨張金属板の他面に高熱膨張金属板を圧接した３層材同
士を、冷間または高熱膨張金属板の再結晶温度以上に加
熱して、直接あるいは常温または再結晶温度以上に加熱
した高熱膨張金属板を介在させて圧接したことを特徴と
する熱伝導材料の製造方法。6. A high thermal expansion metal plate heated at room temperature or at a recrystallization temperature or higher is pressed onto one surface of a low thermal expansion metal plate having a large number of through holes formed in the thickness direction, and the high thermal expansion metal is transferred from the through holes to the low thermal expansion metal. After exposed and integrated on the plate surface, the three-layer material in which the high thermal expansion metal plate is pressure-welded to the other surface of the low thermal expansion metal plate is heated cold or higher than the recrystallization temperature of the high thermal expansion metal plate to directly Alternatively, a method for producing a heat-conducting material is characterized in that a high thermal expansion metal plate heated to room temperature or a recrystallization temperature or higher is interposed and pressed.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29249591A JPH05109947A (en) | 1991-10-12 | 1991-10-12 | Heat conducting material and its manufacture |
| EP92309275A EP0537965B1 (en) | 1991-10-12 | 1992-10-12 | Process of manufacturing a heat-conductive material |
| DE69217810T DE69217810T2 (en) | 1991-10-12 | 1992-10-12 | Process for the production of a thermally conductive material |
| US07/959,606 US5358795A (en) | 1991-10-12 | 1992-10-13 | Heat-conductive material and method of producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29249591A JPH05109947A (en) | 1991-10-12 | 1991-10-12 | Heat conducting material and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05109947A true JPH05109947A (en) | 1993-04-30 |
Family
ID=17782564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29249591A Pending JPH05109947A (en) | 1991-10-12 | 1991-10-12 | Heat conducting material and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05109947A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006134984A (en) * | 2004-11-04 | 2006-05-25 | Neomax Material:Kk | Metal composite material and heat dissipation member containing the same |
| US7097914B2 (en) | 2001-08-28 | 2006-08-29 | Kabushiki Kaisha Toyota Jidoshokki | Composite structural material, and method of producing the same |
| WO2007105580A1 (en) * | 2006-03-13 | 2007-09-20 | Kabushiki Kaisha Toyota Jidoshokki | Base for power module |
| JP2010245496A (en) * | 2009-03-17 | 2010-10-28 | Welcon:Kk | Heat conduction composite material and method of manufacturing the same |
| JP2015015274A (en) * | 2013-07-03 | 2015-01-22 | 三菱電機株式会社 | Semiconductor device for electric power |
| WO2015055899A1 (en) * | 2013-10-18 | 2015-04-23 | Griset | Support for electronic power components, power module provided with such a support, and corresponding production method |
| CN115073793A (en) * | 2022-08-05 | 2022-09-20 | 常州富烯科技股份有限公司 | Graphene heat-conducting film, preparation method thereof and heat-conducting gasket |
-
1991
- 1991-10-12 JP JP29249591A patent/JPH05109947A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7097914B2 (en) | 2001-08-28 | 2006-08-29 | Kabushiki Kaisha Toyota Jidoshokki | Composite structural material, and method of producing the same |
| JP2006134984A (en) * | 2004-11-04 | 2006-05-25 | Neomax Material:Kk | Metal composite material and heat dissipation member containing the same |
| WO2007105580A1 (en) * | 2006-03-13 | 2007-09-20 | Kabushiki Kaisha Toyota Jidoshokki | Base for power module |
| US8102652B2 (en) | 2006-03-13 | 2012-01-24 | Kabushiki Kaisha Toyota Jidoshokki | Base for power module |
| JP5007296B2 (en) * | 2006-03-13 | 2012-08-22 | 株式会社豊田自動織機 | Power module base |
| US8824144B2 (en) | 2006-03-13 | 2014-09-02 | Kabushiki Kaisha Toyota Jidoshokki | Base for power module |
| JP2010245496A (en) * | 2009-03-17 | 2010-10-28 | Welcon:Kk | Heat conduction composite material and method of manufacturing the same |
| JP2015015274A (en) * | 2013-07-03 | 2015-01-22 | 三菱電機株式会社 | Semiconductor device for electric power |
| WO2015055899A1 (en) * | 2013-10-18 | 2015-04-23 | Griset | Support for electronic power components, power module provided with such a support, and corresponding production method |
| CN115073793A (en) * | 2022-08-05 | 2022-09-20 | 常州富烯科技股份有限公司 | Graphene heat-conducting film, preparation method thereof and heat-conducting gasket |
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