JPH0497976A - Silicon carbide-based composite body and its production - Google Patents
Silicon carbide-based composite body and its productionInfo
- Publication number
- JPH0497976A JPH0497976A JP2214066A JP21406690A JPH0497976A JP H0497976 A JPH0497976 A JP H0497976A JP 2214066 A JP2214066 A JP 2214066A JP 21406690 A JP21406690 A JP 21406690A JP H0497976 A JPH0497976 A JP H0497976A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- silicon carbide
- alloy
- porous body
- based composite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 49
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910000551 Silumin Inorganic materials 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 7
- 239000000956 alloy Substances 0.000 claims abstract description 7
- 229910021364 Al-Si alloy Inorganic materials 0.000 claims abstract 4
- 229910018566 Al—Si—Mg Inorganic materials 0.000 claims abstract 3
- 239000000843 powder Substances 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- LSMIOFMZNVEEBR-ICLSSMQGSA-N scilliroside Chemical compound C=1([C@@H]2[C@@]3(C)CC[C@H]4[C@@]([C@]3(CC2)O)(O)C[C@H](C2=C[C@@H](O[C@H]3[C@@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O)CC[C@@]24C)OC(=O)C)C=CC(=O)OC=1 LSMIOFMZNVEEBR-ICLSSMQGSA-N 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 3
- 238000010000 carbonizing Methods 0.000 claims 1
- 239000011148 porous material Substances 0.000 abstract description 7
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000005336 cracking Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 235000021355 Stearic acid Nutrition 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 4
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 239000008117 stearic acid Substances 0.000 description 4
- 229910000676 Si alloy Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 1
- 229910007981 Si-Mg Inorganic materials 0.000 description 1
- 229910008316 Si—Mg Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007849 furan resin Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は炭化珪素系複合体およびその製造方法に関し、
さらに詳しくは、高靭性を有する炭化珪素系複合体およ
びその製造方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a silicon carbide-based composite and a method for producing the same;
More specifically, the present invention relates to a silicon carbide composite having high toughness and a method for producing the same.
〔従来の技術］
メカニカルシール用摺動材として、炭化珪素は、高い硬
度、優れた耐食性、高い熱伝導性等の特性を有するため
、従来の金属材料、超硬合金、アルミナ等の材料にとっ
て替わり使用範囲が拡大しつつある。[Prior Art] As a sliding material for mechanical seals, silicon carbide has properties such as high hardness, excellent corrosion resistance, and high thermal conductivity, so it can replace conventional materials such as metal materials, cemented carbide, and alumina. The range of use is expanding.
反応焼結したＳｉＣ製品は、熔融Ｓｉの存在下で、炭素
粉末とＳＩＣ粉末の凝集性混合物を反応焼成することに
よって作製される。混合物中の炭素は結合性ＳｉＣに転
換し、はぼ連続したＳｉＣマトリックスが、フリーＳｉ
相中に形成される。Reactively sintered SiC products are made by reactively firing a cohesive mixture of carbon powder and SIC powder in the presence of molten Si. The carbon in the mixture converts to bonded SiC, and the nearly continuous SiC matrix becomes free Si.
Formed during phase.
このようにして作製される従来のＳｉＣ製品は跪いため
に一度クランクが発生すると、クラックが簡単に成長し
て割れやすいという問題点があった。Conventional SiC products manufactured in this manner have a problem in that once a crank occurs, cracks easily grow and break because the product is bent.
この現象は、フリーＳｉ相も極めて晩いためクランクの
進展に対しての障壁となり難いということも原因となっ
ている。This phenomenon is also caused by the fact that the free Si phase is also extremely slow and therefore hardly acts as a barrier to the development of the crank.
本発明の目的は、高靭性を有し、クラックが発生しにに
く、かつクラックが発生してもクランクの成長を阻止で
きると共に、高耐食性を向上させることができる炭化珪
素系複合体とその製造方法を提供することにある。The object of the present invention is to provide a silicon carbide-based composite that has high toughness, is resistant to cracking, can prevent the growth of cranks even if cracks occur, and can improve high corrosion resistance. The purpose is to provide a manufacturing method.
上記した目的を達成するために、本発明の炭化珪素系複
合体は、ＳｉＣの骨格よりなる多孔体の空隙を、シルミ
ン（Ａｊ！−Ｓｉ合金）および／またはガンマ−シルミ
ン（、ｌ−１−５ｉ−合金）で充填したことを特徴とす
る。In order to achieve the above object, the silicon carbide-based composite of the present invention fills the voids of a porous body made of a SiC skeleton with silmine (Aj!-Si alloy) and/or gamma-silmine (, l-1- 5i-alloy).
また、本発明の炭化珪素系複合体の製造方法は、ＳｉＣ
の多孔体を作製した後、この多孔体の空隙に、融点以上
に加熱されたシルミン（Ａｌｆｉ−Ｓｉ合金）および／
またはガンマ−シルミン（Ａｌｆｉ−Ｓｉ−Ｍｇ合金）
を含浸させることを特徴とする。Further, the method for manufacturing a silicon carbide-based composite of the present invention includes SiC
After producing a porous body, Silumin (Alfi-Si alloy) heated above the melting point and/or
or gamma-silumin (Alfi-Si-Mg alloy)
It is characterized by being impregnated with.
すなわち、本発明は、脆いＳｉ０代わりに高靭性と高耐
蝕性を有するシルミン（Ａｌｆｉ−Ｓｉ合金）、および
／またはガンマ−シルミン（ＡＩＳｉ−Ｍｇ合金）をＳ
ｉＣ多孔体の空隙に充填したものである。That is, the present invention replaces the brittle Si0 with silmine (Alfi-Si alloy) and/or gamma-silmine (AISi-Mg alloy), which has high toughness and high corrosion resistance.
It is filled into the voids of an iC porous body.
ＳｉＣ多孔体は、例えば、下記に示す３通りの方法で作
製することができる。The SiC porous body can be produced, for example, by the following three methods.
第１は、ＳｉＣ粉末と炭素粉末との混合物を所定の形状
に成形後、Ｓｉと反応結合させて作製する方法である。The first method is to form a mixture of SiC powder and carbon powder into a predetermined shape and then react and bond it with Si.
第２は、ＳｉＣ粉末と炭化性樹脂との混合物を所定の形
状に成形し、樹脂を炭化させた後、Ｓｉと反応結合させ
て作製する方法である。The second method is to mold a mixture of SiC powder and carbonizable resin into a predetermined shape, carbonize the resin, and then react and bond it with Si.
第３は、ＳｉＣ粉末に微量の焼結助剤を添加し、その混
合物を所定の形状に成形後、非酸化性雰囲気中で焼結す
る方法である。The third method is to add a small amount of sintering aid to SiC powder, mold the mixture into a predetermined shape, and then sinter it in a non-oxidizing atmosphere.
これらの方法の何れかで作製したＳＩＣ多孔体に対して
、その空隙にシルミンおよび／またはガンマ−シルミン
が充填される。ＳｉＣ多孔体は、反応焼結または常圧焼
結でつくられるが、反応焼結の場合におけるＳｉの供給
量は成形体中の残留炭素をＳｉＣとするための当量のみ
でよい。The voids of the SIC porous body produced by any of these methods are filled with silmine and/or gamma-silmine. The SiC porous body is produced by reactive sintering or pressureless sintering, but in the case of reactive sintering, the amount of Si supplied only needs to be an equivalent amount to convert residual carbon in the molded body to SiC.
ＳｉＣ成形体中にＳｉが余分に残れば、ＳｉＣ多孔体中
に含浸するシルミンおよび／またはガンマ−シルミンの
不純物として作用し、組成に変化を与え、シルミンおよ
び／またはガンマ−シルミンの特性が発揮できなくなる
。If excess Si remains in the SiC molded body, it acts as an impurity in the silmin and/or gamma-silmin impregnated into the SiC porous body, changes the composition, and makes it impossible to exhibit the characteristics of silmin and/or gamma-silmin. It disappears.
一方、ＳｉＣ成形体中のＳｉが不足すれば、炭素を残留
させることになる。On the other hand, if Si in the SiC molded body is insufficient, carbon will remain.
シルミンは１〜２０％５ｉ−Ａｊ！合金で、引っ張り強
度１０−１８ｋｇ／鰭、伸び１０〜１５％の機械的性質
があり、Ｓｉよりはるかに侵れた高靭性を持つため、そ
の複合体にもその性質を発揮させることができる。Silumin is 1-20% 5i-Aj! It is an alloy with mechanical properties such as tensile strength of 10-18 kg/fin and elongation of 10-15%, and has high toughness far superior to that of Si, so its properties can also be exhibited in composites.
また、ガンマ−シルミンは５〜９％ＳｉＯ，３％Ｍｇ−
Ａｌ！合金で、引っ張り強度１８〜２２ｋｇ／閣、伸び
４〜１０％の機械的性質があり、Ｓｉよりはるかに優れ
た高靭性を持つため、その複合体にもその性質を発揮さ
せることができる。In addition, gamma-silmine is 5-9% SiO, 3% Mg-
Al! It is an alloy with mechanical properties such as a tensile strength of 18 to 22 kg/kg and an elongation of 4 to 10%, and has a high toughness far superior to that of Si, so its properties can also be exhibited in composites.
シルミンの融点は５８０〜６８０℃であり、ガンマ−シ
ルミンの融点は６５０℃前後であるため、溶融状態で高
い流動性を有し、ＳｉＣとの濡れ性が極めて高＜溶融シ
ルミンおよび／またはガンマ−シルミンは、ＳｉＣ多孔
体中に容品に含浸する。The melting point of sirumin is 580 to 680°C, and the melting point of gamma sirumin is around 650°C, so it has high fluidity in the molten state and extremely high wettability with SiC. Sirumin is impregnated into the container in the SiC porous body.
ＳｉＣ多孔体中に充填されるシルミンおよび／またはガ
ンマ−シルミンの量は、ＳｉＣ多孔体に対して、５〜４
０体積％、望ましくは、１０〜２５体積％が好ましい、
ＳｉＣ多孔体中に充填されるシルミンおよび／またはガ
ンマ−シルミンの量が４０体積％よりも多いと、ＳＩＣ
の特長である高硬度、高熱伝導性等の特性が発揮できな
くなり、一方、ＳｉＣ多孔体中に充填されるシルミンお
よび／またはガンマ−シルミンの量が５体積％よりも少
ないと、最終的に得られる複合体の靭性が十分でない。The amount of sirumine and/or gamma sirumine filled in the SiC porous material is 5 to 4% relative to the SiC porous material.
0% by volume, preferably 10-25% by volume,
SIC
On the other hand, if the amount of silmine and/or gamma-silmine filled in the porous SiC material is less than 5% by volume, the characteristics such as high hardness and high thermal conductivity, which are the characteristics of SiC porous material, cannot be exhibited. The toughness of the composite is insufficient.
本発明の炭化珪素系複合体を製造するには、例えば、平
均粒径１０〜２０μｍのＳｉＣ粉末とこれにフェノール
樹脂、フラン樹脂、ウレタン樹脂等の樹脂を５〜１５重
量％の割合で配合し、また、ステアリン酸、パラフィン
、ワックス等の滑剤を１〜３重量％の割合で添加して湿
式混合する。In order to produce the silicon carbide composite of the present invention, for example, SiC powder with an average particle size of 10 to 20 μm is blended with a resin such as a phenol resin, a furan resin, or a urethane resin in a proportion of 5 to 15% by weight. In addition, a lubricant such as stearic acid, paraffin, wax, etc. is added in a proportion of 1 to 3% by weight and wet-mixed.
次いで乾燥後、所定の圧力で加圧成形し、真空または不
活性ガス雰囲気中、１４００〜１５００℃の温度で加熱
して前記樹脂を炭化する。そして、十分なＳｉと接触可
能な形態で再度１４５０〜１５５０°Ｃの温度で加熱す
る。After drying, the resin is press-molded at a predetermined pressure and heated at a temperature of 1,400 to 1,500° C. in a vacuum or an inert gas atmosphere to carbonize the resin. Then, it is heated again at a temperature of 1,450 to 1,550°C in a form that allows contact with sufficient Si.
次いで降温後の材料に、所定の配合割合でシルミンおよ
び／またはガンマ−シルミンを接触させ、６５０〜５０
０℃程度の温度範囲に維持する。Next, the material after cooling is brought into contact with sirumin and/or gamma sirumin at a predetermined blending ratio, and
Maintain the temperature range around 0℃.
実施例１
平均粒径１０μｍのＳＩＣ粉末に対しフェノール樹脂を
１０重量％、ステアリン酸を１重量％加えて湿式混合し
た。乾燥後、金型に移して１．５ｔｏｎ／ｃｄの圧力で
加圧成形した。非酸化性雰囲気で１５００℃に加熱し樹
脂を炭化させた。Example 1 10% by weight of phenol resin and 1% by weight of stearic acid were added to SIC powder having an average particle size of 10 μm, and wet-mixed. After drying, it was transferred to a mold and pressure-molded at a pressure of 1.5 ton/cd. The resin was carbonized by heating to 1500° C. in a non-oxidizing atmosphere.
次いで炭化物を完全にＳｉＣとするための最小必要限度
の５１と接触させつつ再び１５００℃まで加熱した。降
温後の材料に５１１５％Ａ２８５％粉末を接触させ、再
び昇温させ７５０℃に１時間保持し、除冷した。Next, the carbide was heated again to 1500° C. while being brought into contact with 51, which is the minimum necessary amount to completely convert the carbide into SiC. After cooling, the material was brought into contact with 5115%A285% powder, heated again, held at 750°C for 1 hour, and slowly cooled.
焼結体はシルミンおよび／またはガンマ−シルミンを１
５体積％含む複合体となった。シルミンおよび／または
ガンマ−シルミンの代わりにＳｉＣ多孔体の空隙にＳｉ
を含浸させた場合との比較を第１表に示す。The sintered body contains 1 silumin and/or gamma silumin.
The result was a composite containing 5% by volume. Si is added to the voids of the SiC porous material instead of sirumin and/or gamma sirumin.
Table 1 shows a comparison with the case of impregnating with.
実施例２
平均粒径１０μｍのＳｉＣ粉末に対しフェノール樹脂を
１０重量％、ステアリン酸を１重量％加えて湿式混合し
た。乾燥後、金型に移して１、５ ｔｏｎ ／ ｃ−の
圧力で加圧成形した。非酸化性雰囲気で１５００℃に加
熱し樹脂を炭化させた。Example 2 10% by weight of phenol resin and 1% by weight of stearic acid were added to SiC powder having an average particle size of 10 μm, and wet-mixed. After drying, it was transferred to a mold and press-molded at a pressure of 1.5 ton/c-. The resin was carbonized by heating to 1500° C. in a non-oxidizing atmosphere.
次いで炭化物を完全にＳｉＣとするための最小必要限度
のＳｉと接触させつつ再び１５００°Ｃまで加熱した。Next, the carbide was heated again to 1500° C. while being brought into contact with the minimum necessary amount of Si to completely convert the carbide into SiC.
降温後の材料に５ｉ１８％−Ｍｇ０．３％−Ａ１粉末を
接触させ、再び昇温させ７００°Ｃに１時間保持し、除
冷した。After cooling, the material was brought into contact with 5i18%-Mg0.3%-A1 powder, and the temperature was raised again and held at 700°C for 1 hour, followed by gradual cooling.
焼結体はシルミンおよび／またはガンマ−シルミンを１
５体積％含む複合体となった。The sintered body contains 1 silumin and/or gamma silumin.
The result was a composite containing 5% by volume.
比較例
平均粒径１０μｍのＳｉＣ粉末に対しフェノール樹脂を
１０重量％、ステアリン酸を１重量％加えて湿式混合し
た。乾燥後、金型に移して１、５ ｔ ｏ ｎ ／ ｃ
ｊの圧力で加圧成形した。非酸化性雰囲気で１５００℃
に加熱し、樹脂を炭化させた０次いで炭化物を完全にＳ
ｉＣとするためのＳｉと残留する気孔を完全に埋めるた
めのＳｉの合計量より過剰のＳｉを接触させつつ再び１
５００°Ｃまで加熱した。降温後、焼結体の上に残った
Ｓｉを除去した。Comparative Example 10% by weight of phenolic resin and 1% by weight of stearic acid were added to SiC powder having an average particle size of 10 μm and wet-mixed. After drying, transfer to a mold and make 1.5 tons/c.
Pressure molding was performed at a pressure of j. 1500℃ in non-oxidizing atmosphere
The resin was heated to 0 and then the carbide was completely S
1 again while contacting Si in excess of the total amount of Si to form iC and Si to completely fill the remaining pores.
Heated to 500°C. After the temperature was lowered, the Si remaining on the sintered body was removed.
（以下、余白）
（以下、余白）
第１表から明らかなように、ＳｉＣ多孔体の空隙にシル
ミンおよび／またはガンマ−シルミンを充填した複合体
は、比較例に比べて曲げ強度が高くなっており、破壊靭
性値は大幅に向上している。(Hereafter, margin) (Hereafter, margin) As is clear from Table 1, the composite in which the voids of the SiC porous body are filled with sirumin and/or gamma sirumin has higher bending strength than the comparative example. The fracture toughness value has been significantly improved.
本発明の材料は破壊靭性値が大きい利点を有しており、
クラックの発生が防止され、信鯨性の高い材料として用
いることができる。The material of the present invention has the advantage of a large fracture toughness value,
It prevents the occurrence of cracks and can be used as a material with high reliability.
Claims (5)
（Ａｌ−Ｓｉ合金）および／またはガンマーシルミン（
Ａｌ−Ｓｉ−Ｍｇ合金）で充填したことを特徴とする炭
化珪素系複合体。(1) Fill the voids in a porous body consisting of a SiC skeleton with silumin (Al-Si alloy) and/or gamma silumin (
1. A silicon carbide-based composite, characterized in that it is filled with an Al-Si-Mg alloy.
に、融点以上に加熱されたシルミン （Ａｌ−Ｓｉ合金）および／またはガンマーシルミン（
Ａｌ−Ｓｉ−Ｍｇ合金）を含浸させることを特徴とする
炭化珪素系複合体の製造方法。(2) After producing a SiC porous body, fill the voids of this porous body with silmine (Al-Si alloy) and/or gamma silmine (Al-Si alloy) heated above the melting point.
1. A method for producing a silicon carbide-based composite, the method comprising impregnating a silicon carbide-based composite with an Al-Si-Mg alloy.
混合物を所定の形状に成形後、Ｓｉと反応結合させて作
製することを特徴とする請求項２記載の炭化珪素系複合
体の製造方法。(3) Manufacturing the silicon carbide-based composite according to claim 2, wherein the SiC porous body is produced by molding a mixture of SiC powder and carbon powder into a predetermined shape and then reacting and bonding it with Si. Method.
の混合物を所定の形状に成形し、前記樹脂を炭化させた
後、Ｓｉと反応結合させて作製することを特徴とする請
求項２記載の炭化珪素系複合体の製造方法。(4) The SiC porous body is produced by molding a mixture of SiC powder and a carbonizable resin into a predetermined shape, carbonizing the resin, and then reacting and bonding it with Si. A method for producing the silicon carbide-based composite described above.
物を所定の形状に成形後、非酸化性雰囲気中で焼結する
ことを特徴とする請求項２記載の炭化珪素系複合体の製
造方法。(5) The silicon carbide composite according to claim 2, wherein a small amount of sintering aid is added to the SiC powder, the mixture is formed into a predetermined shape, and then sintered in a non-oxidizing atmosphere. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2214066A JPH0497976A (en) | 1990-08-13 | 1990-08-13 | Silicon carbide-based composite body and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2214066A JPH0497976A (en) | 1990-08-13 | 1990-08-13 | Silicon carbide-based composite body and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0497976A true JPH0497976A (en) | 1992-03-30 |
Family
ID=16649691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2214066A Pending JPH0497976A (en) | 1990-08-13 | 1990-08-13 | Silicon carbide-based composite body and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0497976A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000281468A (en) * | 1998-11-12 | 2000-10-10 | Denki Kagaku Kogyo Kk | Silicon carbide complex, its production and radiator article uisng the same |
| JP2012144389A (en) * | 2011-01-07 | 2012-08-02 | Taiheiyo Cement Corp | SiC/Si COMPOSITE MATERIAL |
-
1990
- 1990-08-13 JP JP2214066A patent/JPH0497976A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000281468A (en) * | 1998-11-12 | 2000-10-10 | Denki Kagaku Kogyo Kk | Silicon carbide complex, its production and radiator article uisng the same |
| JP2012144389A (en) * | 2011-01-07 | 2012-08-02 | Taiheiyo Cement Corp | SiC/Si COMPOSITE MATERIAL |
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