JPH0492459A - Resin sealing type semiconductor device - Google Patents
Resin sealing type semiconductor deviceInfo
- Publication number
- JPH0492459A JPH0492459A JP20946790A JP20946790A JPH0492459A JP H0492459 A JPH0492459 A JP H0492459A JP 20946790 A JP20946790 A JP 20946790A JP 20946790 A JP20946790 A JP 20946790A JP H0492459 A JPH0492459 A JP H0492459A
- Authority
- JP
- Japan
- Prior art keywords
- sealing resin
- resin body
- semiconductor device
- sealing
- resin material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 154
- 239000011347 resin Substances 0.000 title claims abstract description 154
- 238000007789 sealing Methods 0.000 title claims abstract description 139
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 230000002093 peripheral effect Effects 0.000 claims 2
- 239000000835 fiber Substances 0.000 claims 1
- 230000008646 thermal stress Effects 0.000 abstract description 28
- 239000000463 material Substances 0.000 abstract description 19
- 238000000465 moulding Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 3
- 230000008602 contraction Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008645 cold stress Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野ｊ
この発明は、半導体素子およびこの半導体素子の端子導
出機構を含む本体構成部を第１の封止樹脂で封止し、さ
らにこれを第２の封止樹脂で封止する樹脂封止型半導体
装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application j This invention is directed to sealing a main body component including a semiconductor element and a terminal lead-out mechanism of the semiconductor element with a first sealing resin, and further sealing this with a second sealing resin. The present invention relates to a resin-sealed semiconductor device that is sealed with a sealing resin.
［従来の技術］
半導体素子を含む本体構成部を第１の封止樹脂によって
封止すると共に、さらにこの第１の封止樹脂体を第２の
封止樹脂で封止するようにした半導体装置は、耐湿性の
向上を目的とする構成として、例えば特開昭６３−４２
１５１号公報、あるいは特開昭６４−３７０４３号公報
に示されている。さらに特開昭６４−９１４９８号公報
に示されるように、外周の第２の封止樹脂体によってコ
ネクタハウジングを外囲形成し、機能向上を図るように
することも考えられている。[Prior Art] A semiconductor device in which a main body component including a semiconductor element is sealed with a first sealing resin, and the first sealing resin body is further sealed with a second sealing resin. For example, as a structure aiming at improving moisture resistance, JP-A-63-42
This method is disclosed in Japanese Patent Application Laid-open No. 151 or Japanese Patent Application Laid-Open No. 64-37043. Furthermore, as shown in Japanese Patent Application Laid-Open No. 64-91498, it has been considered to surround the connector housing with a second sealing resin body on the outer periphery to improve its functionality.
しかし、第１の封止樹脂体をさらに第２の封止樹脂体に
よって封止することによって、冷熱ストレスによって発
生する熱応力が増大するようにムリ、本体構成部の半導
体素子と第１の封止樹脂体との間に剥離現象が発生する
ことがある。したかって耐湿性の劣化、さらに機能劣化
等が生じ、信頼性に問題が発生する。However, by further sealing the first sealing resin body with a second sealing resin body, it is impossible to increase the thermal stress generated due to cold stress. A peeling phenomenon may occur between the resin and the resin stopper. This results in deterioration in moisture resistance, further deterioration in functionality, and problems in reliability.
また特開平１−３０９３５７号公報で示されるように、
第１の封止樹脂体を低弾性率の柔らかい樹脂材料によっ
て構成することが考えられている。Also, as shown in Japanese Patent Application Laid-Open No. 1-309357,
It has been considered that the first sealing resin body is made of a soft resin material with a low elastic modulus.
しかしこのようにしたのでは、例えばアルミニウム等に
よって構成されるヒートシンクを一体的に構成すること
ができず、第１の封止樹脂体の熱伝導率も悪くなる。し
たがって、半導体チップ部分の発熱による機能損失があ
り、信頼性の低下の要因となる。However, in this case, a heat sink made of, for example, aluminum cannot be integrally constructed, and the thermal conductivity of the first sealing resin body also deteriorates. Therefore, there is a loss of function due to heat generation in the semiconductor chip portion, which causes a decrease in reliability.
［発明が解決しようとする課題］
この発明は上記のような点に鑑みなされたもので、第１
の封止樹脂体と第２の封止樹脂体とによって２重に封止
した構造であっても、第１の封止樹脂体によって封止さ
れた半導体素子と第１の封止樹脂体との間に発生する熱
応力が効果的に緩和され、耐湿性と共に信頼性が確実に
向上されるようにする樹脂封止型半導体装置を提供しよ
うとするものである。[Problem to be solved by the invention] This invention was made in view of the above points, and the first problem is
Even if the structure is double-sealed with a sealing resin body and a second sealing resin body, the semiconductor element sealed with the first sealing resin body and the first sealing resin body It is an object of the present invention to provide a resin-sealed semiconductor device in which thermal stress generated during the process is effectively alleviated, and moisture resistance and reliability are reliably improved.
［課題を解決するための手段］
この発明に係る樹脂封止型半導体装置は、半導体素子、
その他の端子導出機構を含む本体構成部を第１の封止樹
脂体によって封止すると共に、この第１の封止樹脂体を
第２の封止樹脂体によって被覆されるようにするもので
、第１の封止樹脂体の線膨脹率αｌより、第２の封止樹
脂体の線膨脹率α２を小さく設定する。[Means for Solving the Problems] A resin-sealed semiconductor device according to the present invention includes a semiconductor element,
The main body component including other terminal lead-out mechanisms is sealed with a first sealing resin body, and the first sealing resin body is covered with a second sealing resin body, The linear expansion coefficient α2 of the second sealing resin body is set smaller than the linear expansion coefficient αl of the first sealing resin body.
［作用コ
この様に構成された樹脂封止型半導体装置にあっては、
冷却時において発生される第２の封止樹脂体の収縮度合
いが、第１の封止樹脂体において発生する収縮の度合い
よりも小さいため、この冷却時において第２の封止樹脂
体の作用によって、第１の封止樹脂体の圧縮応力が緩和
される。したがって、第１の封止樹脂体によって封止さ
れた半導体素子と、第１の封止樹脂体との間に発生する
熱応力が効果的に低減されるようになる。したがって、
第１の封止樹脂と半導体素子との間に発生する剥離現象
が抑制され、信頼性が著しく向上されるようになる。[Function] In a resin-sealed semiconductor device configured in this way,
Since the degree of contraction of the second sealing resin body that occurs during cooling is smaller than the degree of contraction that occurs in the first sealing resin body, the effect of the second sealing resin body during cooling , the compressive stress of the first sealing resin body is relaxed. Therefore, thermal stress generated between the semiconductor element sealed by the first sealing resin body and the first sealing resin body is effectively reduced. therefore,
The peeling phenomenon that occurs between the first sealing resin and the semiconductor element is suppressed, and reliability is significantly improved.
［発明の実施例］ 以下、図面を参照してこの発明の一実施例を説明する。[Embodiments of the invention] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図はその断面構造を示しているもので、半導体素子
１１は例えばシリコン等を母材にして構成され、この半
導体素子１１は金属によるフレ半導体素子１１の周囲部
分には、例えば銅を主成分とする合金、４２アロイ等の
導電性を有する材料を母材として構成されたリード１４
が設けられ、このリード１４と半導体素子１１の導出端
子部とは、Ａｇ１Ａｕ、Ｃｕ等のボンディングワイヤ１
５によって接続されている。そして、リード１４は詳細
は図示していないがこの半導体装置とこの半導体装置外
部との接続等に用いられる。FIG. 1 shows its cross-sectional structure, and the semiconductor element 11 is constructed using, for example, silicon as a base material. The lead 14 is made of a conductive material such as 42 alloy as a base material.
The lead 14 and the lead-out terminal portion of the semiconductor element 11 are connected to a bonding wire 1 made of Ag1Au, Cu, etc.
Connected by 5. Although the lead 14 is not shown in detail, it is used for connection between this semiconductor device and the outside of this semiconductor device.
ここで、半導体素子１１を搭載したフレーム１２および
リード１４は、通常リードフレームとして一枚の板材よ
りプレス、ホトエツチング等によって加工形成される。Here, the frame 12 on which the semiconductor element 11 is mounted and the leads 14 are usually formed as a lead frame by pressing, photoetching, etc. from a single plate.
この様な半導体素子１１、リード１４、ボンディングワ
イヤ１５等からなる半導体装置の本体構成部は、エポキ
シ系樹脂等で構成される第１の封止樹脂体１Ｂによって
封止され、本体構成部の各構成要素は、この第１の封止
樹脂体１６によって固定される。The main body components of the semiconductor device including the semiconductor element 11, leads 14, bonding wires 15, etc. are sealed with a first sealing resin body 1B made of epoxy resin or the like, and each of the main body components The components are fixed by this first sealing resin body 16.
この第１の封止樹脂体■６は、さらにＰＰＳ、ＰＢＴ等
の熱可塑性樹脂、あるいはエポキシ系、シリコン系統の
熱硬化性樹脂によって構成された第２の封止樹脂体１７
によって封止固定される。This first sealing resin body 6 is further provided with a second sealing resin body 17 made of thermoplastic resin such as PPS or PBT, or thermosetting resin such as epoxy or silicone.
It is sealed and fixed by.
ここで、第１の封止樹脂体１６の上面部および下面部の
周囲には、これを取り囲むようにして第２図の（Ａ）に
示すように突起状帯１８が形成されており、この突起状
帯１８ ｔ−Ｊ半導体装置の本体構成部を封止するに際
して、第１の封止樹脂体１６を成形するときに形成され
る。Here, protruding bands 18 are formed around the upper and lower surfaces of the first sealing resin body 16 so as to surround them, as shown in FIG. 2(A). The protruding band 18 is formed when the first sealing resin body 16 is molded when sealing the main body component of the t-J semiconductor device.
この突起状帯１８は、第１の封止樹脂体１６の一方の面
に対してのみ形成するようにしても良く、また第２図の
（Ｂ）で示すように特に全周にわたって連続して形成さ
せる必要もない。The protruding band 18 may be formed only on one surface of the first sealing resin body 16, or may be formed continuously over the entire circumference as shown in FIG. 2(B). There is no need to form it.
そして、第２の封止樹脂体１７は、第１の封止樹脂体１
６に形成された突起状帯１８が埋め込まれるように成形
されるもので、第１および第２の封止樹脂体１６および
１７が一体的に結合されるようにしている。The second sealing resin body 17 is connected to the first sealing resin body 1.
It is molded so that the protruding band 18 formed at 6 is embedded, so that the first and second sealing resin bodies 16 and 17 are integrally joined.
この様な半導体装置において、第２の封止樹脂体１７の
熱膨張率α２は、第１の封止樹脂体１Ｂの熱膨張率α１
よりも小さく設定されている。In such a semiconductor device, the thermal expansion coefficient α2 of the second sealing resin body 17 is equal to the thermal expansion coefficient α1 of the first sealing resin body 1B.
is set smaller than.
樹脂封止型半導体装置が、高温の状態から冷却されると
、半導体素子１１と第１の封止樹脂体１６を構成する樹
脂との線膨脹率の相違によって、半導体素子１１と第１
の封止樹脂体１６の界面に、熱応力が発生する。この熱
応力は、半導体素子１１と第１の封止樹脂体１６との界
面を剥離したり、またボンディングワイヤ１５の寿命を
低下させ、さらにパッシベーションクラックの発生の要
因となる。When the resin-sealed semiconductor device is cooled from a high temperature state, the difference in linear expansion coefficient between the semiconductor element 11 and the resin constituting the first sealing resin body 16 causes the semiconductor element 11 and the first
Thermal stress is generated at the interface of the sealing resin body 16. This thermal stress causes separation of the interface between the semiconductor element 11 and the first sealing resin body 16, shortens the life of the bonding wire 15, and causes passivation cracks.
この様に界面部に発生する熱応力について、第１の封止
樹脂体１６の線膨脹率α１と、第２の封止樹脂体１７の
線膨脹率α２の関係でまとめると、以下のようになる。The thermal stress generated at the interface in this way can be summarized as follows based on the relationship between the linear expansion coefficient α1 of the first sealing resin body 16 and the linear expansion coefficient α2 of the second sealing resin body 17. Become.
第３図は第１図で示した半導体装置を３層構造でモデル
化して示したもので、その各層の断面積をＡＸ、ヤング
率をＥ Ｘ Ｘ線膨脹率をα８でそれぞれ示している。FIG. 3 shows a model of the semiconductor device shown in FIG. 1 with a three-layer structure, in which the cross-sectional area of each layer is shown as AX, the Young's modulus as E X , and the X-ray expansion coefficient as α8.
このモデルにおいてΔＴの温度変化を与えたときにの半
導体素子１１、第１および第２の封止樹脂体１６．１７
にそれぞれ発生する熱応力を、それぞれσｓ１σ１、σ
２とすると、次のような行列式で表される。In this model, the semiconductor element 11, the first and second sealing resin bodies 16 and 17 when a temperature change of ΔT is applied
The thermal stress generated in σs1σ1 and σ
2, it is expressed by the following determinant.
半導体素子１１に加わる応力σＳを求めると、次のよう
になる。The stress σS applied to the semiconductor element 11 is determined as follows.
ａｓ ＝Ｋ （Ｃ＋Ｅ２ Ａ２ （（２２−ａｌ ）
１したがって、第２の封止樹脂１７の線膨脹率α２を“
ａｌ＞α２１とすることによって、σＳを小さくするこ
とができる。as = K (C+E2 A2 ((22-al)
1 Therefore, the linear expansion coefficient α2 of the second sealing resin 17 is “
By setting al>α21, σS can be made small.
第４因は第２の封止樹脂体１７の線膨脹率α２と熱応力
との関係を示している。この図の意味するところは、第
２の封止樹脂体１７の線膨脹率α２を小さくすることに
よって、半導体素子１１と第１の封止樹脂体１６との界
面に発生する熱応力を低減することができることである
。The fourth factor shows the relationship between the linear expansion coefficient α2 of the second sealing resin body 17 and thermal stress. What this figure means is that by reducing the coefficient of linear expansion α2 of the second encapsulating resin body 17, the thermal stress generated at the interface between the semiconductor element 11 and the first encapsulating resin body 16 is reduced. This is something that can be done.
すなわち、従来の例では、冷却時に半導体素子と第１の
封止樹脂体の界面に発生する熱応力が、σ２ｃｓσ１
（図中の点Ｃおよび点１）となるものであるが、実施例
で示した構成とすると、第２の封止樹脂体１７０線膨脹
率α２を第１の封止樹脂体１６の線膨脹率α１より小さ
くすることで、発生する熱応力をσ２ｂ（図中の点ｂ）
にまで低減することができる。さらに第２の封止樹脂体
１７によって封止されていない構造において、冷却時に
半導体素子１１と第１の封止樹脂体１５との界面に発生
する熱応力σ０ （図中の点Ｏ）よりも、第２の封止樹
脂体１７の線膨脹率α２を
とすることにより、σ２ａ （図中の点ａ）にまで低減
できる。That is, in the conventional example, the thermal stress generated at the interface between the semiconductor element and the first sealing resin body during cooling is σ2csσ1
(Points C and 1 in the figure) However, if the configuration shown in the example is used, the linear expansion coefficient α2 of the second sealing resin body 170 is set to the linear expansion coefficient α2 of the first sealing resin body 16. By making the rate smaller than α1, the generated thermal stress can be reduced to σ2b (point b in the figure).
can be reduced to Furthermore, in a structure that is not sealed by the second sealing resin body 17, the thermal stress σ0 (point O in the figure) generated at the interface between the semiconductor element 11 and the first sealing resin body 15 during cooling is , the linear expansion coefficient α2 of the second sealing resin body 17 can be reduced to σ2a (point a in the figure).
ここで、第２の封止樹脂体１７かない場合の熱応力σ０
を求めると以下のようになる。Here, the thermal stress σ0 when the second sealing resin body 17 is not present
The result is as follows.
ａｏ ＝Ｋ ｆｃ＋Ｅ２ Ａ２ （α２−ａｔ ） ｌ
Ａ２−０であるので、
ａｏ −ＫＣ
−ＥＩ Ａｌ （ａｌ −ａｓ ）
次に第２の封止樹脂体】７があるときにσＯとなるよう
な線膨脹率ａ’ｏを求めると次のようになる。ao = K fc + E2 A2 (α2-at) l
Since A2-0, ao -KC -EI Al (al -as) Next, when there is a second sealing resin body ]7, finding the linear expansion coefficient a'o that becomes σO is as follows. become.
（ＥＩ Ａｌ ＋Ｅ２ Ａ２ ） （ａｌ −ａｓ
） ＋Ｅ２ Ａ２ （ｃｒｏ −ｃｒｌ ）上式をａ
ｏについて解（と次のようになる。(EI Al +E2 A2) (al -as
) +E2 A2 (cro -crl)Convert the above formula to a
The solution for o (and the following.
第２の樹脂封止体１７が存在しない状態では、フレーム
カット面が露出しており、この端面部からの湿気の侵入
によって耐湿性は低下するが、第５図で示すように第１
の封止樹脂体１６および第２の封止樹脂体１７によって
２重封止することによって、フレーム１２の端面が被覆
され、耐湿性の向上を図ることができる。When the second resin encapsulant 17 is not present, the frame cut surface is exposed, and the moisture resistance decreases due to moisture infiltration from this end surface.
By performing double sealing with the first sealing resin body 16 and the second sealing resin body 17, the end face of the frame 12 is covered, and moisture resistance can be improved.
さらに第２の封止樹脂体１７の線膨脹率α２を、Ｎ１の
封止樹脂体１Ｂの線膨脹率ａ１より小さくなるようにす
ることによって、次のような場合に熱応力低減の効果が
発揮される。Furthermore, by making the linear expansion coefficient α2 of the second sealing resin body 17 smaller than the linear expansion coefficient a1 of the N1 sealing resin body 1B, the effect of reducing thermal stress is exhibited in the following cases. be done.
まず第１に、パッケージ最終形状を変えない場合、パッ
ケージの機械的な強度を保持するため、あるいは耐湿性
確保のためにパッケージの厚さをある程度保つよう設計
する必要がある。そこで、２重モールド構造を採用した
場合には、第１の封止樹脂体１６の厚みを成形限界付近
まで薄く構成し、その後第２の封止樹脂体１７で設計上
必要とされる厚みに成形する。この際、第２の封止樹脂
体１７の線膨脹率α２が、少なくとも第１の封止樹脂体
１６の線膨脹率αＩより小さくなるように材料選定すれ
ば、単一モールドの樹脂断面積Ａと、２重モールドの第
１の封止樹脂体１６の断面積Ａｔと第２の封止樹脂体１
７の断面積Ａ２との和Ａ’（−ＡＩ＋Ａ２）が等しい限
りは、半導体素子ＩＩと樹脂との界面に発生する熱応力
は低減できる。First of all, if the final shape of the package is not changed, it is necessary to design the package to maintain a certain thickness in order to maintain its mechanical strength or ensure moisture resistance. Therefore, when a double mold structure is adopted, the thickness of the first sealing resin body 16 is reduced to near the molding limit, and then the thickness of the second sealing resin body 17 is reduced to the thickness required for the design. Shape. At this time, if the material is selected so that the linear expansion coefficient α2 of the second sealing resin body 17 is smaller than the linear expansion coefficient αI of the first sealing resin body 16, the cross-sectional area of the resin of the single mold is A. , the cross-sectional area At of the double molded first sealing resin body 16 and the second sealing resin body 1
As long as the sum A' (-AI+A2) of 7 and the cross-sectional area A2 is equal, the thermal stress generated at the interface between the semiconductor element II and the resin can be reduced.
第２に、第２の封止樹脂体１７の成形によってパッケー
ジが大きくなる場合、前記第１の場合のように成形限界
からみてパッケージの厚さに余裕のある形状の場合には
、第２の封止樹脂体１７の成形によるサイズの拡大を、
第１の封止樹脂体１６のすイズを小さくする等のことに
よって補うことができる。しかし、第１の封止樹脂体１
６が成形限界付近まで縮小化されている場合には、第２
の封止樹脂体１７によってサイズが大型化されることは
避けられない。そこで、第２の封止樹脂体１７の線膨脹
率α２か、先に述べたα０より小さい材料を選定するこ
とによって、パッケージが大型化されたとしても、熱応
力は単一のモールドのパッケージよりも低減することが
可能とされる。Second, when the package becomes larger due to molding of the second sealing resin body 17, if the package has a shape with a margin of thickness considering the molding limit as in the first case, the second sealing resin body 17 Expansion of the size by molding the sealing resin body 17,
This can be compensated for by reducing the noise of the first sealing resin body 16. However, the first sealing resin body 1
6 is reduced to near the forming limit, the second
It is inevitable that the sealing resin body 17 increases the size. Therefore, by selecting a material with a linear expansion coefficient α2 of the second sealing resin body 17 that is smaller than α0 mentioned above, even if the package is enlarged, the thermal stress will be lower than that of a single molded package. It is also possible to reduce the
材料物性的にはこの様な関係を満足させれば熱応力を低
減できる。しかし、この熱応力低減の効果をさらに高め
るために、突起状帯１８を少なくとも第１の封止樹脂体
Ｉ６の上面の縁部分か、下面部の縁部分に形成すること
によって、第１の封止樹脂体１６と第２の封止樹脂体１
７の界面におけるアンカー効果が発揮されるようにする
ことによって、−層の効果が期待できる。In terms of material properties, thermal stress can be reduced if such a relationship is satisfied. However, in order to further enhance this thermal stress reduction effect, the protruding band 18 is formed at least on the edge of the upper surface or the edge of the lower surface of the first sealing resin body I6. Sealing resin body 16 and second sealing resin body 1
By making the anchor effect at the interface of layer 7 exerted, the effect of the − layer can be expected.
第］の封止樹脂体１６と第２の封止樹脂体１７との密着
力あるいは密着性を向上するために、これまでの実施例
においては突起状帯１Ｂを第１の封止樹脂体１６の面上
に形成した。しかし、この構造は任意に選択できるもの
であり、例えば第６図の（Ａ）に示すように、第１の封
止樹脂体■６の少なくとも上面もしくは下面に溝１８１
を形成するようにしても良い。また同図の（Ｂ）で示す
ように第１の封止樹脂体ＩＢの上面もしくは下面の中央
部分に凹部１８２を形成するように構成し、また（Ｃ）
図に示すように突起状帯１８と溝１８１とを組み合わせ
形成するようにしても良い。In order to improve the adhesion or adhesion between the first sealing resin body 16 and the second sealing resin body 17, in the previous embodiments, the projecting band 1B is attached to the first sealing resin body 16. was formed on the surface of However, this structure can be selected arbitrarily; for example, as shown in FIG.
may be formed. Further, as shown in (B) of the figure, a recess 182 is formed in the center portion of the upper surface or lower surface of the first sealing resin body IB, and (C)
As shown in the figure, the protruding band 18 and the groove 181 may be formed in combination.
この様に形成される突起状帯１８、満１８１、凹部１８
２は第１の封止樹脂体１Ｂの一体成形時に形成されるも
のであるが、第１の封止樹脂体１６の成形後、切削、接
着剤等によって、第１の封止樹脂体１６の表面に固定手
段を設定することもできる。例えば第６図の（Ｄ）に示
すように第１の封止樹脂体１６の表面に接着剤１８３を
塗布し、接着剤１８３によって第１の封止樹脂体１６と
第２の封止樹脂体１７との密着性を高める。また（Ｅ）
図で示すように第１の封止樹脂体１６の表面に凹凸１８
４を形成する加工を施し、この凹凸１８４によって第２
の封止樹脂体１７か第１の封止樹脂体１６に効果的に密
着されるようにしても良い。The protruding band 18, full 181, and recess 18 formed in this way
2 is formed when the first sealing resin body 1B is integrally molded, and after the first sealing resin body 16 is molded, the first sealing resin body 16 is removed by cutting, adhesive, etc. It is also possible to provide fixing means on the surface. For example, as shown in FIG. 6(D), an adhesive 183 is applied to the surface of the first sealing resin body 16, and the adhesive 183 connects the first sealing resin body 16 and the second sealing resin body. Improves adhesion with 17. Also (E)
As shown in the figure, unevenness 18 is formed on the surface of the first sealing resin body 16.
4, and the unevenness 184 forms the second
The first sealing resin body 17 may be effectively adhered to the first sealing resin body 16.
熱可塑性樹脂によって第２の封止樹脂体１７を形成した
場合、一般的には樹脂自体の強度向上等の目的のため、
ガラス繊維等による充填材を混入している。成形時の樹
脂の流れに沿って、この充填材が配向されるようになり
、したがって樹脂の流れ方向（配向方向）とこれに垂直
な方向で線膨脹率が異なる現象が現れる。When the second sealing resin body 17 is formed of thermoplastic resin, generally for the purpose of improving the strength of the resin itself,
Contains filler such as glass fiber. The filler is oriented along the flow of the resin during molding, and therefore a phenomenon occurs in which the coefficient of linear expansion is different in the flow direction (orientation direction) of the resin and in the direction perpendicular thereto.
ここで、配向方向の線膨脹率をα２１１ 、これと垂直
の方向の線膨脹率をα２１とした場合、α２１１＜ａｌ
”および“α２１〈α１″の組み合わせならば、第１図
で示した第１の実施例の構造で効果が発揮される。しか
し、α２１１ ＜αＩ＃および“α２１＞α工”の組み
合わせの場合には、第７図に示すように配向方向の断面
積Ａｌｌより配向方向に垂直な面の断面積Ａ１を小さく
することで、目的を達成させることができる。Here, if the coefficient of linear expansion in the orientation direction is α211 and the coefficient of linear expansion in the direction perpendicular to this is α21, then α211<al
” and “α21<α1”, the structure of the first embodiment shown in FIG. The objective can be achieved by making the cross-sectional area A1 of the plane perpendicular to the orientation direction smaller than the cross-sectional area All in the orientation direction, as shown in FIG.
この図においてα２１およびＡＩで発生する熱応力はσ
ｂであり、α２１１およびＡｌｌで発生する熱応力はσ
Ｃであって、従来構造で発生する熱応力σａよりも小さ
くなる。In this figure, the thermal stress generated at α21 and AI is σ
b, and the thermal stress generated at α211 and All is σ
C, which is smaller than the thermal stress σa generated in the conventional structure.
ここで、σａ１σｂ１σＣはそれぞれ次の式で表現され
る。Here, σa1σb1σC are each expressed by the following equations.
（Ａｌｌ−Ａ２ 、Ａｌ−ＫＡ２とする）配向方向に垂
直方向の断面積Ａ１を、配向方向の断面積Ａｌｌのに倍
に設計することで、熱応力が従来に比較して下げられる
。(All-A2, Al-KA2) By designing the cross-sectional area A1 in the direction perpendicular to the orientation direction to be twice the cross-sectional area All in the orientation direction, thermal stress can be lowered compared to the conventional one.
ａｃ＜ａａ （、’、（！２１１ ＜ａｌよりａｃ
−ｃｙａ ＜Ｏ）Ｘ Ｉ（１−４Ｃ）Ｅｓ Ａｓ（α１
−α５）−Ｋ（ＥＩＡ１＋Ｅ２Ａ２＋ＥｓＡｓ）×（α
２１−α１）
−Ｃ［Ｅｓ Ａｓ（ａｌ−ａｓ）−Ｋ（（ＥＩ Ａｌ
＋Ｅ２ Ａ２（（２２１−ａＬ）＋Ｅｓ Ａｓ（α２１
−ａｌ）） ］
≧０
よって σＯ≧σｂ
第８図乃至第１３図は、それぞれこの様な点を考慮した
実施例を示しているもので、第８図で示した実施例にお
いては、第２の封止樹脂体１７の少なくとも上面もしく
は下面に窪み４０を形成し、配向方向の断面積Ａｌｌを
、配向方向に垂直な断面積ＡＩより大きくしている。こ
こで、各図の（Ｄ）図では線膨脹率の方向性を示してい
るもので、矢印の長さは絶対値の大きさを表している。ac<aa (,',(!211 <al from ac
-cya <O)X I(1-4C)Es As(α1
−α5)−K(EIA1+E2A2+EsAs)×(α
21-α1) -C[Es As(al-as)-K((EI Al
+E2 A2((221-aL)+Es As(α21
-al)) ] ≧0 Therefore, σO≧σb FIGS. 8 to 13 respectively show examples that take these points into consideration. A depression 40 is formed in at least the upper surface or the lower surface of the sealing resin body 17, and the cross-sectional area All in the orientation direction is made larger than the cross-sectional area AI perpendicular to the orientation direction. Here, the diagram (D) in each figure shows the directionality of the linear expansion coefficient, and the length of the arrow represents the magnitude of the absolute value.
第９図は第２の封止樹脂体１６の一方方向に開放部４１
を形成し、配向方向に垂直な方向の線膨脹率α２Ｉによ
って発生する熱応力を開放するようにしている。また第
１０図は第２の封止樹脂体１７の配向方向に沿って、少
なくとも］っのスリット４２を形成した構成を示すもの
で、配向方向に垂直な方向の線膨脹率α２１により発生
する熱応力を開放するようにしている。FIG. 9 shows an open portion 41 in one direction of the second sealing resin body 16.
is formed to release the thermal stress generated by the coefficient of linear expansion α2I in the direction perpendicular to the orientation direction. Furthermore, FIG. 10 shows a configuration in which at least one slit 42 is formed along the orientation direction of the second sealing resin body 17, and the heat generated by the linear expansion coefficient α21 in the direction perpendicular to the orientation direction is I'm trying to release stress.
第１１図で示した例では、第８図および第９図で示した
例を組み合わせた開放部４３を形成している。第１２図
は第８図で示した例と第１１図で示した例を組み合わせ
たスリット状開放部４４を第２の封止樹脂体１７に形成
している。In the example shown in FIG. 11, the open portion 43 is formed by combining the examples shown in FIGS. 8 and 9. In FIG. 12, a slit-like opening 44 is formed in the second sealing resin body 17, which is a combination of the example shown in FIG. 8 and the example shown in FIG.
第１３図に示した例においては、配向方向と垂直とされ
る方向に向けて、第１の封止樹脂体１６の少なくとも上
面もしくは下面に、少なくとも１つの突起４５を形成し
、配向方向にはアンカー効果を働かせ、配向方向と垂直
な方向にはアンカー効果が作用しないようにしている。In the example shown in FIG. 13, at least one protrusion 45 is formed on at least the upper surface or the lower surface of the first sealing resin body 16 in a direction perpendicular to the orientation direction, and An anchor effect is activated, and the anchor effect is prevented from acting in a direction perpendicular to the orientation direction.
この突起４５は溝てあっても良い。This protrusion 45 may have a groove.
以上種々の変形例を示したが、もちろんここで示された
例に限定されず、第２の封止樹脂体１７の少なくとも１
つの特定方向（配向方向等）の線膨脹率を、第１の封止
樹脂体１８の線膨脹率より小さくすることによって、半
導体素子１１部分の損傷の発生を確実に阻止できるもの
であり、その効果を高めるために形成された溝、突起等
の構造も、これまで示された例を種々組み合わせて構成
することができる。また、線膨脹率に異方性がある場合
は、さらに実施例で示した構造を適宜組み合わせて対処
できる。Although various modified examples have been shown above, it is of course not limited to the examples shown here, and at least one of the second sealing resin bodies 17
By making the linear expansion coefficient in two specific directions (orientation direction, etc.) smaller than the linear expansion coefficient of the first sealing resin body 18, damage to the semiconductor element 11 portion can be reliably prevented. Structures such as grooves and protrusions formed to enhance the effect can also be constructed by combining various examples shown so far. Furthermore, if there is anisotropy in the coefficient of linear expansion, this can be dealt with by appropriately combining the structures shown in the embodiments.
［発明の効果コ
以上のようにこの発明に係る樹脂封止型半導体装置によ
れば、第１の封止樹脂体の形状に工夫を加え、また第２
の封止樹脂体の形状と材料を工夫することによって、内
部に埋設される半導体素子を含む本体構造部と第１の封
止樹脂体との間に発生する熱応力が緩和されるようにな
り、この半導体装置の信頼性が効果的に向上される。[Effects of the Invention] As described above, according to the resin-sealed semiconductor device according to the present invention, the shape of the first sealing resin body is devised, and the second
By devising the shape and material of the first encapsulating resin body, the thermal stress generated between the main body structure including the semiconductor element embedded therein and the first encapsulating resin body can be alleviated. , the reliability of this semiconductor device is effectively improved.
第１図はこの発明の一実施例に係る樹脂封止型半導体装
置を説明する断面構成図、第２図の（Ａ）および（Ｂ）
はそれぞれこの実施例の第１の封止樹脂体の外観を示す
図、第３′図は熱応力を説明するためのモデルを示す図
、第４図はこのモデルに説明される熱応力の状態を示す
図、第５図は実施例で示した半導体装置のモデルを示す
図、第６図の（Ａ）〜（Ｅ）はそれぞれ半導体装置の断
面構造の例を示す図、第７図は第２の封止樹脂体のだ断
面積に対する効果を説明する図、第８図乃至第１３図は
それぞれこの発明のさらに他の実施例を示すもので、そ
れぞれ（Ａ）は平面図、（Ｂ）および（Ｃ）図はそれぞ
れ（Ａ）図のｂ−ｂ線およびｃ−ｃ線に沿った断面図、
（Ｄ）は線膨脹率の方向性を示す図である。
１１・・・半導体素子、１２・・・フレーム、１４・・
・リード、１５・・・ボンディングワイヤ、１６・・・
第１の封止樹脂体、１７・・
第２の封止樹脂体、
１８・・・突起状帯、
溝、
・・・四部、
・・・接着剤、
・・・凹凸、
４０・・・窪
み、
Ｌ
４３．
４４・・・開放部、
４２・・・ス
リ
ト。FIG. 1 is a cross-sectional configuration diagram illustrating a resin-sealed semiconductor device according to an embodiment of the present invention, and FIG. 2 (A) and (B)
are diagrams showing the appearance of the first sealing resin body of this example, Figure 3' is a diagram showing a model for explaining thermal stress, and Figure 4 is a diagram showing the state of thermal stress explained by this model. 5 is a diagram showing a model of the semiconductor device shown in the example, FIGS. 6A to 6E are diagrams each showing an example of the cross-sectional structure of the semiconductor device, and FIG. Figures 8 to 13, which illustrate the effect on the cross-sectional area of the sealing resin body in No. 2, respectively show still other embodiments of the present invention, in which (A) is a plan view and (B) is a plan view. and (C) are cross-sectional views taken along line b-b and line c-c in figure (A), respectively;
(D) is a diagram showing the directionality of linear expansion coefficient. 11... Semiconductor element, 12... Frame, 14...
・Lead, 15...Bonding wire, 16...
First sealing resin body, 17...Second sealing resin body, 18...Protruding band, groove,...Four parts,...Adhesive,...Irregularities, 40...Indentations , L 43. 44...opening part, 42...slit.
Claims (7)
するボンディングワイヤを含む本体構成部を一体的に封
止する第１の封止樹脂体と、この第１の封止樹脂体の外
周部の少なくとも一部を被覆するように形成された第２
の封止樹脂体とを具備し、 前記第１の封止樹脂体の線膨脹率よりも、前記第２の封
止樹脂体の線膨脹率が小さくされるように、前記第１お
よび第２の封止樹脂体が選定されるようにしたことを特
徴とする樹脂封止型半導体装置。(1) A first sealing resin body that integrally seals the main body components including the semiconductor element, leads, and bonding wires that connect these two, and the outer peripheral part of this first sealing resin body. a second formed to cover at least a portion of the
a sealing resin body, and the first and second sealing resin bodies are arranged such that a linear expansion coefficient of the second sealing resin body is smaller than a linear expansion coefficient of the first sealing resin body. 1. A resin-sealed semiconductor device characterized in that a molded resin body is selected from the following.
凸形状が形成され、前記第２の封止樹脂体にこの凹凸形
状部分で結合されるようにした請求項１の樹脂封止型半
導体装置。(2) The resin sealing according to claim 1, wherein an uneven shape is formed on at least one surface of the first sealing resin body, and the first sealing resin body is bonded to the second sealing resin body at the uneven portion. type semiconductor device.
するボンディングワイヤを含む本体構成部を一体的に封
止する第１の封止樹脂体と、この第１の封止樹脂体の外
周部の少なくとも一部を被覆するように形成された第２
の封止樹脂体とを具備し、 前記第１の封止樹脂体の線膨脹率よりも、前記第２の封
止樹脂体の繊維質の配列方向に対応した特定される方向
の線膨脹率が小さくされるように、前記第１および第２
の封止樹脂体が選定されるようにしたことを特徴とする
樹脂封止型半導体装置。(3) A first sealing resin body that integrally seals the main body components including the semiconductor element, leads, and bonding wires that connect these two, and the outer peripheral part of this first sealing resin body. a second formed to cover at least a portion of the
a sealing resin body, the coefficient of linear expansion of the second sealing resin body in a specified direction corresponding to the direction in which the fibers are arranged is higher than that of the first sealing resin body. the first and second
1. A resin-sealed semiconductor device characterized in that a molded resin body is selected from the following.
った断面積よりも、これと垂直の方向の断面積が大きく
設定されるようにした請求項３の樹脂封止型半導体装置
。(4) The resin-sealed semiconductor according to claim 3, wherein the cross-sectional area of the second sealing resin body in a direction perpendicular to the specified direction is set larger than the cross-sectional area along the specified direction. Device.
直の方向の少なくとも一方に、前記第１の封止樹脂体が
露出される開口が形成されるようにした請求項３の樹脂
封止型半導体装置。(5) An opening through which the first sealing resin body is exposed is formed in at least one direction perpendicular to the specified direction of the second sealing resin body. Resin-sealed semiconductor device.
って前記第１の封止樹脂体が露出される溝を形成し、前
記第２の封止樹脂体が前記溝によって２分割されるよう
にした請求項３の樹脂封止型半導体装置。(6) forming a groove in which the first sealing resin body is exposed along the specified direction of the second sealing resin body; 4. The resin-sealed semiconductor device according to claim 3, wherein the resin-sealed semiconductor device is divided into parts.
前記特定される方向に対して垂直な方向に延びるように
形成した請求項３の樹脂封止型半導体装置。(7) The uneven shape formed on the first resin sealing body is
4. The resin-sealed semiconductor device according to claim 3, wherein the resin-sealed semiconductor device is formed to extend in a direction perpendicular to the specified direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20946790A JP2936669B2 (en) | 1990-08-07 | 1990-08-07 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20946790A JP2936669B2 (en) | 1990-08-07 | 1990-08-07 | Resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0492459A true JPH0492459A (en) | 1992-03-25 |
| JP2936669B2 JP2936669B2 (en) | 1999-08-23 |
Family
ID=16573350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20946790A Expired - Fee Related JP2936669B2 (en) | 1990-08-07 | 1990-08-07 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2936669B2 (en) |
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| JP2936669B2 (en) | 1999-08-23 |
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