JPH0478268U - - Google Patents
Info
- Publication number
- JPH0478268U JPH0478268U JP11964190U JP11964190U JPH0478268U JP H0478268 U JPH0478268 U JP H0478268U JP 11964190 U JP11964190 U JP 11964190U JP 11964190 U JP11964190 U JP 11964190U JP H0478268 U JPH0478268 U JP H0478268U
- Authority
- JP
- Japan
- Prior art keywords
- beam source
- sample
- strip
- cooling device
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims 1
Description
第１図は、この考案の一実施例に係る低温エツ
チング装置を示す斜視図である。第２図は、第１
図の線−に沿う拡大断面図である。第３図は
、従来の低温エツチング装置の断面図である。
２０……帯状ビーム源、２２……ビーム、２４
……部屋、３４……スリツト状ノズル、３６……
エツチングガス、３８……冷却装置、４０……試
料、４２……ボールねじ、４４……モータ。
FIG. 1 is a perspective view showing a low temperature etching apparatus according to an embodiment of this invention. Figure 2 shows the first
FIG. 3 is an enlarged cross-sectional view taken along line - in the figure. FIG. 3 is a sectional view of a conventional low temperature etching apparatus. 20... Strip beam source, 22... Beam, 24
...Room, 34...Slit-shaped nozzle, 36...
Etching gas, 38... Cooling device, 40... Sample, 42... Ball screw, 44... Motor.
Claims (1)
に帯状のビームを照射する帯状ビーム源と、この
帯状ビーム源のビーム出口部に設けられた細長い
部屋であつて排気されるものと、この部屋の両外
側に前記帯状ビーム源の長手方向に沿つてそれぞ
れ設けられていてエツチングガスを前記試料に向
けて噴射するスリツト状ノズルと、前記試料を保
持すると共に同試料を冷却して前記エツチングガ
スを試料表面に液化吸着させる冷却装置と、前記
帯状ビーム源および冷却装置の少なくとも一方を
移動させる駆動機構とを備えることを特徴とする
低温エツチング装置。 A vacuum vessel, a band beam source that irradiates a sample housed in the vacuum vessel with a band beam, a long and narrow room provided at the beam exit of the band beam source that is evacuated, and this room. a slit-shaped nozzle that is provided along the longitudinal direction of the strip beam source on both sides of the strip beam source and injects etching gas toward the sample; 1. A low-temperature etching apparatus comprising: a cooling device for liquefaction adsorption onto a sample surface; and a drive mechanism for moving at least one of the strip beam source and the cooling device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11964190U JPH0478268U (en) | 1990-11-14 | 1990-11-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11964190U JPH0478268U (en) | 1990-11-14 | 1990-11-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0478268U true JPH0478268U (en) | 1992-07-08 |
Family
ID=31867586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11964190U Pending JPH0478268U (en) | 1990-11-14 | 1990-11-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0478268U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015029072A (en) * | 2013-06-10 | 2015-02-12 | エフ・イ−・アイ・カンパニー | Electron beam-induced etching |
| JP2018523922A (en) * | 2015-08-07 | 2018-08-23 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | Apparatus and technique for processing substrates using directional plasma and reactive gas |
-
1990
- 1990-11-14 JP JP11964190U patent/JPH0478268U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015029072A (en) * | 2013-06-10 | 2015-02-12 | エフ・イ−・アイ・カンパニー | Electron beam-induced etching |
| US10304658B2 (en) | 2013-06-10 | 2019-05-28 | Fei Company | Electron beam-induced etching |
| JP2018523922A (en) * | 2015-08-07 | 2018-08-23 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | Apparatus and technique for processing substrates using directional plasma and reactive gas |