JPH047322A - Sealing resin composition and semiconductor device sealed therewith - Google Patents
Sealing resin composition and semiconductor device sealed therewithInfo
- Publication number
- JPH047322A JPH047322A JP10974490A JP10974490A JPH047322A JP H047322 A JPH047322 A JP H047322A JP 10974490 A JP10974490 A JP 10974490A JP 10974490 A JP10974490 A JP 10974490A JP H047322 A JPH047322 A JP H047322A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- resin composition
- formula
- silica powder
- epoxy resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007789 sealing Methods 0.000 title claims description 23
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 239000011342 resin composition Substances 0.000 title claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000003822 epoxy resin Substances 0.000 claims abstract description 17
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 17
- 239000005011 phenolic resin Substances 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 10
- 239000000843 powder Substances 0.000 claims description 12
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 8
- 238000005538 encapsulation Methods 0.000 claims description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 4
- 125000005843 halogen group Chemical group 0.000 claims description 4
- 229920001568 phenolic resin Polymers 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims 4
- 229920005989 resin Polymers 0.000 abstract description 12
- 239000011347 resin Substances 0.000 abstract description 12
- 238000013329 compounding Methods 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 239000012778 molding material Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 3
- 239000006082 mold release agent Substances 0.000 description 3
- 239000010680 novolac-type phenolic resin Substances 0.000 description 3
- 239000001993 wax Substances 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000004843 novolac epoxy resin Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- QSSXJPIWXQTSIX-UHFFFAOYSA-N 1-bromo-2-methylbenzene Chemical compound CC1=CC=CC=C1Br QSSXJPIWXQTSIX-UHFFFAOYSA-N 0.000 description 1
- 101100443259 Arabidopsis thaliana DIR14 gene Proteins 0.000 description 1
- 101100443261 Arabidopsis thaliana DIR16 gene Proteins 0.000 description 1
- 235000010893 Bischofia javanica Nutrition 0.000 description 1
- 240000005220 Bischofia javanica Species 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- CAYGQBVSOZLICD-UHFFFAOYSA-N hexabromobenzene Chemical compound BrC1=C(Br)C(Br)=C(Br)C(Br)=C1Br CAYGQBVSOZLICD-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- -1 paraffins Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、成形性に優れ、信頼性の高い封止用樹脂組成
物および半導体封止装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a sealing resin composition and a semiconductor sealing device that have excellent moldability and are highly reliable.
（従来の技術）
従来、ダイオード、トランジスタ、集積回路等の電子部
品を熱硬化性樹脂を用いて封止する方法が行われてきた
。 この樹脂封止法は、ガラス、金属、セラミックを用
いたバーメチ・ツクシール方式に比較して経済的に有利
なため、広く実用化されている。 封止用樹脂として、
熱硬化性樹脂の中でも信頼性および価格の点からエポキ
シ樹脂が最も一般的に用いられている。 エポキシ樹脂
には、酸無水物、芳香族アミン、ノボラック型フェノー
ル樹脂等の硬化剤が用いられている。 なかでもノボラ
ック型フェノール樹脂を硬化剤としたエポキシ樹脂は、
他の硬化剤を利用したものに比べて、成形性、耐湿性に
優れ、毒性がなく、かつ安価であるなめ、半導体封止用
樹脂として広く使用されている。(Prior Art) Conventionally, methods have been used to seal electronic components such as diodes, transistors, and integrated circuits using thermosetting resins. This resin sealing method is economically advantageous compared to the barmetal seal method using glass, metal, or ceramic, and is therefore widely put into practical use. As a sealing resin,
Among thermosetting resins, epoxy resins are most commonly used in terms of reliability and cost. For epoxy resins, curing agents such as acid anhydrides, aromatic amines, and novolac-type phenolic resins are used. Among them, epoxy resins that use novolac type phenolic resin as a curing agent are
It is widely used as a semiconductor encapsulation resin because it has excellent moldability and moisture resistance, is non-toxic, and is inexpensive compared to those using other curing agents.
近年、半導体装置は、低価格化の要求が強く、大量生産
による製造歩留りの向上によるコストダウンが必要であ
る。 製造歩留り向上のために更に成形性に優れた封止
用樹脂の開発が要望されてきた。In recent years, there has been a strong demand for lower prices for semiconductor devices, and it is necessary to reduce costs by improving manufacturing yield through mass production. In order to improve manufacturing yields, there has been a demand for the development of sealing resins with even better moldability.
（発明が解決しようとする課題）
成形性で特に問題となるのは、金型への充填性とワイヤ
ー流れであり、封止用樹脂の低粘度化か必要とされる。(Problems to be Solved by the Invention) Particular problems with moldability are mold filling properties and wire flow, and it is necessary to lower the viscosity of the sealing resin.
封止用樹脂を低粘度化するにはフェノール樹脂および
エポキシ樹脂の両方もしくはいずれかの分子量を下げる
必要かあるが、分子量を下げるとガラス転移点も低下し
、信頼性が下がる欠点があった。In order to lower the viscosity of the sealing resin, it is necessary to lower the molecular weight of both or either of the phenol resin and the epoxy resin, but lowering the molecular weight also lowers the glass transition point, which has the disadvantage of lowering reliability.
本発明は上記の欠点を解消するためになされたもので、
成形性に優れ、金型への充填性、ワイヤー流れが少なく
、信頼性の高い封止用樹脂組成物および半導体對止装！
を提供しようとするものである。The present invention has been made to solve the above-mentioned drawbacks.
Encapsulating resin compositions and semiconductor packaging with excellent moldability, ease of filling into molds, little wire flow, and high reliability!
This is what we are trying to provide.
［発明の構成コ
（課題を解決するための手段）
本発明者は、上記の目的を達成しようと鋭意研究を重ね
た結果、特定のエポキシ樹脂および特定のフェノール樹
脂を用いることによって成形性に優れた、信頼性の高い
樹脂組成物が得られることを見いだし、本発明を完成し
たものである。[Structure of the Invention (Means for Solving the Problems) As a result of extensive research aimed at achieving the above object, the present inventor has discovered that by using a specific epoxy resin and a specific phenol resin, excellent moldability can be achieved. In addition, they discovered that a highly reliable resin composition could be obtained and completed the present invention.
すなわち、本発明は、
＜Ａ）次の一般式で示されるエポキシ樹脂（但し、式中
Ｒ１は水素原子、ハロゲン原子又はアルキル基を、Ｒ２
は水素原子又はアルキル基を、ｎは０又は１〜３の整数
を表す）
（Ｂ）次の一般式で示されるフェノール樹脂および
（但し、式中１は０又は１〜７の整数を表す）を必須成
分とし、全体の樹脂組成物に対して前記（Ｃ）のシリカ
粉末を２５〜９０重量％含有してなることを特徴とする
封止用樹脂組成物である。 また、この封止用樹脂組成
物で、半導体素子を封止してなることを特徴とする半導
体Ｍ正装！である。That is, the present invention provides <A) an epoxy resin represented by the following general formula (wherein R1 is a hydrogen atom, a halogen atom or an alkyl group, and R2
represents a hydrogen atom or an alkyl group, and n represents 0 or an integer of 1 to 3) (B) A phenol resin represented by the following general formula (wherein 1 represents 0 or an integer of 1 to 7) This is a sealing resin composition characterized in that it contains silica powder as an essential component and 25 to 90% by weight of the silica powder (C) based on the entire resin composition. Moreover, a semiconductor M formal dress characterized by sealing a semiconductor element with this sealing resin composition! It is.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明に用いる（Ａ）エポキシ樹脂は、次の一般式で示
されるエポキシ樹脂である。The epoxy resin (A) used in the present invention is represented by the following general formula.
（但し、式中Ｒ１は水素原子、ハロゲン原子又はアルキ
ル基を、Ｒ２は水素原子又はアルキル基を、ｎは０又は
１〜３の整数を表す）
これらのエポキシ樹脂ｌ脂の数平均分子量が１５００以
下であることが望ましい、 数平均分子量が１５００を
超えると樹脂の軟化温度が高くなり製造性が悪くなり好
ましくない。(However, in the formula, R1 represents a hydrogen atom, a halogen atom, or an alkyl group, R2 represents a hydrogen atom or an alkyl group, and n represents 0 or an integer of 1 to 3.) The number average molecular weight of these epoxy resins is 1500. It is desirable that the number average molecular weight is below 1,500, which is not preferable because the softening temperature of the resin increases and manufacturability deteriorates.
本発明に用いる（Ｂ）フェノール樹脂は、次の一般式で
示されるフェノール！！ｌＦ、である。The phenol resin (B) used in the present invention is a phenol represented by the following general formula! ! IF.
（但し、式中りは０又は１〜７の整数を表す）これらの
フェノール樹脂の数平均分子量が１０００以下であるこ
とが望ましい。 数平均分子量が１０００を超えると樹
脂の軟化温度が高くなり製造性が悪く好ましくない。
フェノール樹脂の配合割合は、前述した（Ａ）エポキシ
樹脂のエポキシ基（ａ ）と（Ｂ）フェノール樹脂のフ
ェノール性水酸基（ｂ）とのモル比［（ａ）／（ｂ）コ
か０．１〜１０の範囲内であることが望ましい、 モル
比が０．１未満もしくは１０を超えると耐湿性、成形作
業性、及び硬化物の電気特性が悪くなり、いずれの場合
も好ましくない。(However, in the formula, each represents 0 or an integer from 1 to 7.) It is desirable that the number average molecular weight of these phenol resins is 1000 or less. If the number average molecular weight exceeds 1000, the softening temperature of the resin will become high, resulting in poor manufacturability, which is not preferable.
The mixing ratio of the phenol resin is determined by the molar ratio of the epoxy group (a) of (A) epoxy resin and the phenolic hydroxyl group (b) of (B) phenol resin [(a)/(b) 0.1]. It is desirable that the molar ratio be within the range of 10 to 10. If the molar ratio is less than 0.1 or more than 10, the moisture resistance, molding workability, and electrical properties of the cured product will deteriorate, which is not preferable in either case.
本発明に用いる（Ｃ）シリカ粉末としては、般に封止用
として使用されているものが広く使用されるが、それら
の中でも不純物濃度が低いものが好ましい、 シリカ粉
末の配合割合は、全体の樹脂組成物に対して２５〜９０
重量％含有することが好ましい、 その割合が２５重量
％未溝では耐湿性、耐熱性および機械的特性に劣り、ま
た９０重量％を超えると極端に流動性が悪く成形性に劣
り好ましくない。As the silica powder (C) used in the present invention, those commonly used for sealing are widely used, but among them, those with a low impurity concentration are preferred.The blending ratio of the silica powder is 25-90 for resin composition
It is preferable that the content is 25% by weight without grooves, which results in poor moisture resistance, heat resistance, and mechanical properties, and if it exceeds 90% by weight, fluidity is extremely poor and moldability is undesirable.
本発明の封止用樹脂組成物は前述したエポキシ樹脂、フ
ェノール樹脂およびシリカ粉末を必須成分とするが、本
発明の目的に反しない限り、また必要に応じ例えば天然
ワックス類、合成ワックス類、直鎖脂肪酸の金属塩、酸
アミド類、エステル類、パラフィン類などの離型剤、塩
化パラフィン、ブロムトルエン、ヘキサブロムベンゼン
、三酸化アンチモンなどの難燃剤、カーボンブラック、
ベンガラなどの着色剤、種々の硬化剤等を適宜・添加配
合することができる。The sealing resin composition of the present invention has the above-mentioned epoxy resin, phenol resin, and silica powder as essential components, but as long as it does not contradict the purpose of the present invention and as necessary, for example, natural waxes, synthetic waxes, direct waxes, etc. Metal salts of chain fatty acids, acid amides, esters, mold release agents such as paraffins, flame retardants such as chlorinated paraffin, bromotoluene, hexabromobenzene, antimony trioxide, carbon black,
Coloring agents such as red iron oxide, various hardening agents, etc. can be added and blended as appropriate.
本発明の封止用樹脂組成物を成形材料として窮製する場
合の一般的な方法としては、エポキシ樹脂、フェノール
樹脂、シリカ粉末、その他を所定の組成比に選択した原
料成分をミキサー等によって十分均一に混合した後、さ
らに熱ロールによる溶融混合処理、又は二一夕等による
混合処理を行い、次いで冷却固化させ、適当な大きさに
粉砕して成形材料とすることができる。 こうして得ら
れた成形材料は、半導体素子をはじめとする電子部品あ
るいは電気部品の封止・被覆・絶縁等に適用すれば優れ
た特性と信頼性を付与させることができる６
本発明の半導体封止装置は、上記の封止用樹脂組成物を
用いて、半導体素子を封止することにより容易に製造す
ることができる。 封止を行う半導体素子としては、例
えば集積回路、大規模集積回路、トランジスタ、サイリ
スタ、ダイオード等で得に限定されるものではない。
封止の最も一般的な方法としては、低圧トランスファー
成形があるが、射出成形、圧縮成形、注型等にょる封止
も可能である。 封止用樹脂組成物は封止の際に加熱し
て硬化させ、最終的にはこの組成物の硬化物によって封
止された半導体封止装置が得られる。A general method for preparing the encapsulating resin composition of the present invention as a molding material is to thoroughly mix raw ingredients selected from epoxy resin, phenol resin, silica powder, and others in a predetermined composition ratio using a mixer or the like. After uniformly mixing, the mixture can be further melt-mixed using hot rolls or mixed overnight, followed by cooling and solidification, and pulverized into a suitable size to form a molding material. The molding material thus obtained can provide excellent properties and reliability when applied to encapsulation, coating, insulation, etc. of electronic components such as semiconductor elements or electrical components6. Semiconductor encapsulation of the present invention The device can be easily manufactured by encapsulating a semiconductor element using the above-mentioned encapsulating resin composition. The semiconductor element to be sealed may be, for example, an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, etc., but is not particularly limited.
The most common method of sealing is low-pressure transfer molding, but sealing by injection molding, compression molding, casting, etc. is also possible. The sealing resin composition is heated and cured during sealing, and a semiconductor sealing device sealed with a cured product of this composition is finally obtained.
加熱による硬化は１５０’Ｃ以上に加熱して硬化させる
ことが望ましい。For curing by heating, it is desirable to heat the material to 150'C or higher.
（実施例）
本発明を実施例によって具体的に説明するが、本発明は
以下の実施例に限定されるものではない。(Examples) The present invention will be specifically explained by examples, but the present invention is not limited to the following examples.
実施例および比較例において、「％」とあるのは「重量
％」を意味する。In Examples and Comparative Examples, "%" means "% by weight".
実施例
エポキシ樹脂（数平均分子量８９０、エポキシ当量１７
０） １８．６％にフェノール樹脂（数平均分子量４２
０、フェノール当量９０） ９．９％、シリカ粉末７
１％および離−型剤等１．５％を常温で混合し、さらに
９０〜９５℃で混練してこれを冷却粉砕して成形材料［
Ａ］を製造した。Example epoxy resin (number average molecular weight 890, epoxy equivalent weight 17
0) 18.6% phenolic resin (number average molecular weight 42
0, phenol equivalent 90) 9.9%, silica powder 7
1% and 1.5% of mold release agent etc. are mixed at room temperature, further kneaded at 90 to 95°C, cooled and pulverized to obtain a molding material [
A] was produced.
比較例 １
クレゾールノボラックエポキシ樹脂（数平均分子量９０
０、エポキシ当量２１５） １９％にノボラック型フェ
ノール樹脂（数平均分子量４５０、フェノール当量１Ｇ
？） ９．５％、シリカ粉末７１％、−離型剤等１．
５％を実施例１と同様にして成形材料［Ｂ］を製造した
。Comparative Example 1 Cresol novolac epoxy resin (number average molecular weight 90
0, epoxy equivalent 215) 19% novolak type phenolic resin (number average molecular weight 450, phenol equivalent 1G
? ) 9.5%, silica powder 71%, - mold release agent, etc. 1.
A molding material [B] was produced in the same manner as in Example 1 except for 5%.
比較例 ２
比較例１において、クレゾールノボラックエポキシ樹脂
およびノボラック型フェノール樹脂の数平均分子蓋を１
２００．６５０とした以外はすべて比較例１と同一にし
て成形材料［Ｃ］を製造した。Comparative Example 2 In Comparative Example 1, the number average molecular cap of the cresol novolac epoxy resin and the novolac type phenolic resin was 1
A molding material [C] was produced in the same manner as in Comparative Example 1 except that the molding material was 200.650.
実施例及び比較例１〜２で製造した成形材料［Ａ］〜［
Ｃ］を用いて半導体素子を封止し、１７０℃で加熱硬化
させて半導体封止装置を製造した。 成形材料及び半導
体封止装置について諸試験を行ったので、その結果を第
１表に示した。Molding materials [A] to [A] produced in Examples and Comparative Examples 1 and 2
A semiconductor device was manufactured by sealing a semiconductor element using C] and curing it by heating at 170°C. Various tests were conducted on the molding material and the semiconductor sealing device, and the results are shown in Table 1.
本発明は成形性、信頼性に優れており、本発明の効果が
確認された。The present invention has excellent moldability and reliability, and the effects of the present invention were confirmed.
第１表
（単位）
＊１ ：成形材料を用いて高化式フローテスタにより溶
融時の最低粘度を１７５℃で測定した。Table 1 (Units) *1: Using a molding material, the minimum viscosity when melted was measured at 175° C. using a Koka type flow tester.
＊２：成形材料を用いて電気部品３００個取りの金型テ
、１７５℃、３分間トランスファー成形し、未充填不良
の数を調査した。*2: Transfer molding was performed using the molding material in a mold for 300 electrical components at 175° C. for 3 minutes, and the number of unfilled defects was investigated.
＊３：成形材料を用いて半導体素子を１７５℃で３分間
トランスファー成形し、ＤＩＲ１６ビンの半導体封止装
置をつくり、それを１７５℃で８時間加熱した。 この
装！２０個につ髪）て−４０℃と＋２００℃の恒温槽に
各３０分間ずつ入れ、１００サイクルを繰り返した後、
導通テストを行い不良数を調査した。*3: Using the molding material, a semiconductor element was transfer molded at 175°C for 3 minutes to produce a DIR16 bottle semiconductor sealing device, which was then heated at 175°C for 8 hours. This outfit! After repeating 100 cycles by placing them in a constant temperature bath of -40℃ and +200℃ for 30 minutes each,
We conducted a continuity test and investigated the number of defects.
［発明の効果〕
以上の説明および第１表から明らかなように、本発明の
封止用樹脂組成物は、ガラス転移点を下げることなく、
低粘度で成形性に優れており、金型への充填性、ワイヤ
ー流れが少ないものである。[Effects of the Invention] As is clear from the above explanation and Table 1, the sealing resin composition of the present invention has the following properties:
It has low viscosity and excellent moldability, and has low mold filling properties and wire flow.
この封止用樹脂組成物を使用することにより、信頼性が
高く、製造歩留りがよく、ＣＤに寄与した半導体封止装
置を製造することができる。By using this encapsulating resin composition, it is possible to manufacture a semiconductor encapsulating device that is highly reliable, has a good manufacturing yield, and contributes to CD.
Claims (1)
化学式、表等があります▼ （但し、式中Ｒ＾１は水素原子、ハロゲン原子又はアル
キル基を、Ｒ＾２は水素原子又はアルキル基を、ｎは０
又は１〜３の整数を表す） （Ｂ）次の一般式で示されるフェノール樹脂および ▲数式、化学式、表等があります▼ （但し、式中ｍは０又は１〜７の整数を表す） （Ｃ）シリカ粉末 を必須成分とし、全体の樹脂組成物に対して前記（Ｃ）
のシリカ粉末を２５〜９０重量％含有してなることを特
徴とする封止用樹脂組成物。 ２（Ａ）次の一般式で示されるエポキシ樹脂、▲数式、
化学式、表等があります▼ （但し、式中Ｒ＾１は水素原子、ハロゲン原子又はアル
キル基を、Ｒ＾２は水素原子又はアルキル基を、ｎは０
又は１〜３の整数を表す） （Ｂ）次の一般式で示されるフェノール樹脂および ▲数式、化学式、表等があります▼ （但し、式中ｍは０又は１〜７の整数を表す） （Ｃ）シリカ粉末 を必須成分とし、全体の樹脂組成物に対して前記（Ｃ）
のシリカ粉末を２５〜９０重量％含有した封止用樹脂組
成物で、半導体素子を封止してなることを特徴とする半
導体封止装置。[Scope of Claims] 1(A) An epoxy resin represented by the following general formula, ▲Numerical formula,
There are chemical formulas, tables, etc.▼ (However, in the formula, R^1 is a hydrogen atom, a halogen atom, or an alkyl group, R^2 is a hydrogen atom or an alkyl group, and n is 0.
or an integer from 1 to 3) (B) Phenolic resin represented by the following general formula and ▲Mathematical formulas, chemical formulas, tables, etc.▼ (However, m in the formula represents 0 or an integer from 1 to 7) ( C) Silica powder is an essential component, and the above (C) is added to the entire resin composition.
A sealing resin composition comprising 25 to 90% by weight of silica powder. 2(A) Epoxy resin represented by the following general formula, ▲mathematical formula,
There are chemical formulas, tables, etc.▼ (However, in the formula, R^1 is a hydrogen atom, a halogen atom, or an alkyl group, R^2 is a hydrogen atom or an alkyl group, and n is 0.
or an integer from 1 to 3) (B) Phenolic resin represented by the following general formula and ▲Mathematical formulas, chemical formulas, tables, etc.▼ (However, m in the formula represents 0 or an integer from 1 to 7) ( C) Silica powder is an essential component, and the above (C) is added to the entire resin composition.
A semiconductor encapsulation device characterized in that a semiconductor element is encapsulated with a encapsulation resin composition containing 25 to 90% by weight of silica powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10974490A JPH047322A (en) | 1990-04-25 | 1990-04-25 | Sealing resin composition and semiconductor device sealed therewith |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10974490A JPH047322A (en) | 1990-04-25 | 1990-04-25 | Sealing resin composition and semiconductor device sealed therewith |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH047322A true JPH047322A (en) | 1992-01-10 |
Family
ID=14518149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10974490A Pending JPH047322A (en) | 1990-04-25 | 1990-04-25 | Sealing resin composition and semiconductor device sealed therewith |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH047322A (en) |
-
1990
- 1990-04-25 JP JP10974490A patent/JPH047322A/en active Pending
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