JPH0471792A - Marking method - Google Patents
Marking methodInfo
- Publication number
- JPH0471792A JPH0471792A JP2183681A JP18368190A JPH0471792A JP H0471792 A JPH0471792 A JP H0471792A JP 2183681 A JP2183681 A JP 2183681A JP 18368190 A JP18368190 A JP 18368190A JP H0471792 A JPH0471792 A JP H0471792A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- base plate
- opaque
- transparent substrate
- marking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 47
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 abstract description 14
- 230000005684 electric field Effects 0.000 abstract description 12
- 239000010453 quartz Substances 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000000428 dust Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010330 laser marking Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
マーキング方法に関し、更に詳しく言えば、ガラスマス
クなどの透明基板にマーキングする方法に関し、
マーキングの際、マーキングされる透明基板から塵など
が発生するのを防止することができるマーキング方法を
提供することを目的とし、透明基板内部に焦点を結ぶよ
うにレーザ光を照射して透明基板内部を選択的に不透明
化することによりマーキングすることを含み構成する。[Detailed Description of the Invention] [Summary] Regarding a marking method, more specifically, regarding a method of marking a transparent substrate such as a glass mask, the present invention relates to a method of marking a transparent substrate such as a glass mask, and prevents dust from being generated from the transparent substrate to be marked during marking. The purpose of the present invention is to provide a marking method that can selectively make the inside of the transparent substrate opaque by irradiating a laser beam so as to focus on the inside of the transparent substrate, thereby marking the inside of the transparent substrate.
本発明は、マーキング方法に関し、更に詳しく言えば、
ガラスマスクなどの透明基板にマーキングする方法に関
する。The present invention relates to a marking method, and more specifically,
This invention relates to a method for marking transparent substrates such as glass masks.
ガラスマスク用の透明基板を購入した場合、透明基板の
製造品質を管理するため、個々の透明基板に製造ロフト
を示す記号をマーキングしている。When purchasing transparent substrates for glass masks, each transparent substrate is marked with a symbol indicating the manufacturing loft in order to control the manufacturing quality of the transparent substrate.
従来、このマーキング方法としてダイヤモンドカッタ等
を用いて第２図に示すガラスマスクの周辺部のマーク形
成領域７の石英基板５の表面に傷を付け、製造ロフトを
示す記号を描いている。Conventionally, this marking method involves using a diamond cutter or the like to scratch the surface of the quartz substrate 5 in the mark forming region 7 at the periphery of the glass mask shown in FIG. 2 to draw a symbol indicating the manufacturing loft.
しかし、石英基板５の表面に傷を付けることにより、石
英基板５から微細なガラス片が発生し、マスクパターン
形成領域６に付着したまま残存する場合がある。このた
め、マスクパターン形成領域６に形成されるマスクパタ
ーンに傷などが生じ、このマスクパターンを用いて半導
体基板に転写されたパターンにピンホールなどが発生す
るという問題がある。However, by scratching the surface of the quartz substrate 5, fine glass pieces may be generated from the quartz substrate 5 and may remain attached to the mask pattern forming area 6. For this reason, there is a problem in that the mask pattern formed in the mask pattern forming area 6 is scratched, and the pattern transferred to the semiconductor substrate using this mask pattern is pinhole-filled.
本発明は、かかる従来例の問題点に鑑みてなされたもの
であって、マーキングの際、マーキングされる透明基板
から塵などが発生するのを防止することができるマーキ
ング方法を提供することを目的とするものである。The present invention has been made in view of the problems of the conventional method, and an object of the present invention is to provide a marking method that can prevent dust from being generated from a transparent substrate to be marked during marking. That is.
［課題を解決するための手段］
上記課題は、透明基板内部に焦点を結ぶようにレーザ光
を照射して透明基板内部を選択的に不透明化することに
よりマーキングする方法によって解決される。[Means for Solving the Problems] The above problems are solved by a method of marking by irradiating laser light so as to focus on the inside of the transparent substrate to selectively make the inside of the transparent substrate opaque.
本発明の透明基板のマーキング方法によれば、透明基板
内部に焦点を結ぶようにレーザ光を照射しているので、
レーザ光の電界が透明基板内部で最も高くなり、この部
分の電界が透明基板材料の絶縁破壊の臨界電界に達する
とき、絶縁破壊により不透明化する。また、この不透明
化は、通常、高電界領域及びその周辺に局限して発生す
るので、ガラスマスクなどに用いられる十分に厚い透明
基板においては、透明基板内部にのみこの不透明な部分
を形成することができる。According to the transparent substrate marking method of the present invention, since the laser beam is irradiated so as to focus inside the transparent substrate,
The electric field of the laser beam is highest inside the transparent substrate, and when the electric field in this area reaches the critical electric field for dielectric breakdown of the transparent substrate material, the transparent substrate material becomes opaque due to dielectric breakdown. Furthermore, since this opacity usually occurs locally in and around the high electric field region, in a sufficiently thick transparent substrate used for glass masks, etc., it is necessary to form this opaque portion only inside the transparent substrate. I can do it.
これにより、マーキングする際、従来のように透明基板
の表面を物理的に傷つける必要がないので、透明基板か
ら塵などが発生するのを防止することができる。Thereby, when marking, there is no need to physically damage the surface of the transparent substrate as in the conventional method, so it is possible to prevent dust from being generated from the transparent substrate.
以下、図面を参照しながら本発明の実施例について説明
する。Embodiments of the present invention will be described below with reference to the drawings.
第１図は、本発明の実施例の透明基板のマーキング方法
に用いるレーザ照射装置の構成図である。FIG. 1 is a configuration diagram of a laser irradiation device used in a method for marking a transparent substrate according to an embodiment of the present invention.
同図において、１はＹＡＧレーザ発振器、２ａはスイッ
チング用偏向器、２ｂはピンホールで、スイッチング用
偏向器２ａとピンホール２ｂとを用いてレーザ光のスイ
ッチングを行うものである。In the figure, 1 is a YAG laser oscillator, 2a is a switching deflector, and 2b is a pinhole. The switching deflector 2a and the pinhole 2b are used to switch laser light.
また、２Ｃはマークする文字パターンに合わせてレーザ
光を偏向するパターン発生用偏向器、２ｄはスイッチン
グ用偏向器２ａとパターン発生用偏向器２Ｃとを制御す
るマークパターンコントローラ、３はレーザ光４を所定
の箇所に焦点を結ばせるレンズ等の光学系である。Further, 2C is a pattern generation deflector that deflects the laser beam according to the character pattern to be marked, 2d is a mark pattern controller that controls the switching deflector 2a and the pattern generation deflector 2C, and 3 is the laser beam 4. It is an optical system such as a lens that focuses on a predetermined location.
次に、この装置を用いて本発明の実施例の透明基板のマ
ーキング方法について、第１図および第２図を参照しな
がら説明する。Next, a method of marking a transparent substrate according to an embodiment of the present invention using this apparatus will be described with reference to FIGS. 1 and 2.
まず、識別記号を描く厚さ約２．３閣の石英基板５のマ
ーク形成領域７の所定の位置にレーザ光４が照射される
ように石英基板５を移動し、かつレーザ光４の焦点が石
英基板５の内部に位置するように光学系３を調整する。First, the quartz substrate 5 is moved so that the laser beam 4 is irradiated to a predetermined position in the mark forming area 7 of the quartz substrate 5 with a thickness of about 2.3 mm on which an identification symbol is drawn, and the focus of the laser beam 4 is Optical system 3 is adjusted so that it is located inside quartz substrate 5.
次に、ピークパワー１０酔のＹＡＧレーザ発振器１を作
動させ、レンズ３を用いてレーザ光４の焦点距離に相当
する部分のスポット直径を約５μｍに絞る。更に、ＹＡ
Ｇレーザ発振器１の出力を１００に−から徐々に上げて
いく、このとき、焦点距離に相当する部分の電界が最も
高くなる。そして、この電界はレーザ光のパワーに比例
し、かつスポットの直径の２乗に反比例して変化する。Next, the YAG laser oscillator 1 with a peak power of 10% is activated, and the spot diameter of the portion corresponding to the focal length of the laser beam 4 is focused to about 5 μm using the lens 3. Furthermore, YA
When the output of the G laser oscillator 1 is gradually increased from -100 to 100, the electric field at the portion corresponding to the focal length becomes the highest. This electric field changes in proportion to the power of the laser beam and inversely proportional to the square of the spot diameter.
次いで、焦点距離に相当する部分でレーザ光４の電界が
約１００ｋＶ／ｃ−以上の石英の臨界電界に達すると、
石英基板５の絶縁破壊が起こり、数百μ−の幅にわたっ
てガラスが不透明化する。従って、スイッチング用偏向
器２ａ、 ピンホール２ｂ、パターン発生用偏向器２ｃ
及びマークパターンコントローラ２ｄを用いて、この不
透明な部分がロフトを表す符号の形になるように連ねて
いく。これにより、表面から見ると白い符号として識別
できるようになる。Next, when the electric field of the laser beam 4 reaches the critical electric field of quartz of about 100 kV/c- or more at a portion corresponding to the focal length,
Dielectric breakdown of the quartz substrate 5 occurs, and the glass becomes opaque over a width of several hundred microns. Therefore, a switching deflector 2a, a pinhole 2b, a pattern generation deflector 2c
Then, using the mark pattern controller 2d, the opaque portions are connected in the shape of a symbol representing the loft. This makes it possible to identify it as a white code when viewed from the surface.
以上のように、本発明の実施例によれば、透明基板５内
部に焦点を結ぶようにレーザ光４を照射しているので、
レーザ光４の電界が透明基板５内部で最も高くなり、こ
の部分で絶縁破壊によりガラスが不透明化する。この不
透明化は、通常、高電界領域及びその周辺に局限して発
生するので、通常のガラスマスクなどに用いられる十分
に厚い透明基板５においては、透明基板５内部にのみこ
の不透明な部分を形成することができる。As described above, according to the embodiment of the present invention, since the laser beam 4 is irradiated so as to be focused inside the transparent substrate 5,
The electric field of the laser beam 4 is highest inside the transparent substrate 5, and the glass becomes opaque due to dielectric breakdown at this portion. This opacity usually occurs locally in the high electric field region and its surroundings, so in a sufficiently thick transparent substrate 5 used for a normal glass mask, this opaque portion is formed only inside the transparent substrate 5. can do.
これにより、従来のように、透明基板５を物理的に傷つ
けることによりマーキングして塵などが発生するのを防
止することができる。従って、ピンホールなどのマスク
パターンの不良を防止することができるので、これを用
いて作成される半導体装置の製造歩留りの向上を図るこ
とができる。This makes it possible to prevent dust and the like from being generated by marking by physically damaging the transparent substrate 5, as in the prior art. Therefore, defects in the mask pattern such as pinholes can be prevented, and the manufacturing yield of semiconductor devices manufactured using the mask pattern can be improved.
なお、実施例では、ガラスマスクについて本発明を適用
しているが、液晶用のソーダライムガラス基板その他の
透明基板に対しても適用可能である。In the examples, the present invention is applied to a glass mask, but it is also applicable to soda lime glass substrates for liquid crystals and other transparent substrates.
以上のように、本発明の透明基板のマーキング方法によ
れば、透明基板内部に焦点を結ぶようにレーザ光を照射
し、透明基板内部にのみ不透明な部分を形成することに
よりマーキングしているので、従来のように、透明基板
を物理的に傷つけることによりマーキングして塵などが
発生するのを防止することができる。これにより、透明
幕板場に形成されるマスクパターンにピンホールなどが
発生するのを防止することができるので、これを用いて
作成される半導体装置の製造歩留りの向上を図ることが
できる。As described above, according to the method for marking a transparent substrate of the present invention, marking is performed by irradiating laser light so as to focus on the inside of the transparent substrate and forming an opaque portion only inside the transparent substrate. , it is possible to prevent dust from being generated by marking by physically damaging the transparent substrate, as in the past. As a result, it is possible to prevent pinholes from occurring in the mask pattern formed on the transparent screen plate, so that it is possible to improve the manufacturing yield of semiconductor devices manufactured using the mask pattern.
第１図は、本発明の実施例の透明基板のマーキング方法
に用いるレーザマーキング装置の構成図、第２図は、マ
ーキングするガラスマスクの平面図である。
［符号の説明］
１・・・ＹＡＧレーザ発振器、
２ａ・・・スイッチング用偏向器、
２ｂ・・・ピンホール、
２ｃ・・・パターン発生用偏向器、
２ｄ・・・マークパターンコントローラ、３・・・光学
系（レンズ）、
４・・・レーザ光、
５・・・石英基板、
６・・・マスクパターン形成ＨＭ、
７・・・マーク形成領域。
レーザマーキング装置の構成図
第１図
マーキングするガラスマスクの平面図
第２図FIG. 1 is a block diagram of a laser marking device used in a method of marking a transparent substrate according to an embodiment of the present invention, and FIG. 2 is a plan view of a glass mask to be marked. [Description of symbols] 1... YAG laser oscillator, 2a... Switching deflector, 2b... Pinhole, 2c... Pattern generation deflector, 2d... Mark pattern controller, 3... - Optical system (lens), 4... Laser light, 5... Quartz substrate, 6... Mask pattern formation HM, 7... Mark formation area. Configuration diagram of laser marking device Figure 1 Plan view of glass mask to be marked Figure 2
Claims (1)
明基板内部を選択的に不透明化することによりマーキン
グする方法。A method of marking by irradiating laser light so as to focus on the inside of the transparent substrate to selectively make the inside of the transparent substrate opaque.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2183681A JPH0471792A (en) | 1990-07-10 | 1990-07-10 | Marking method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2183681A JPH0471792A (en) | 1990-07-10 | 1990-07-10 | Marking method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0471792A true JPH0471792A (en) | 1992-03-06 |
Family
ID=16140066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2183681A Pending JPH0471792A (en) | 1990-07-10 | 1990-07-10 | Marking method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0471792A (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0743128A1 (en) * | 1995-05-12 | 1996-11-20 | NAICOTEC GmbH | Process and device for marking products of transparent (solid) material with a laser |
| US5837963A (en) * | 1995-08-02 | 1998-11-17 | Tdk Corporation | Method of manufacturing a thin film magnetic head with identification marks |
| JPH11138896A (en) * | 1997-11-07 | 1999-05-25 | Sumitomo Heavy Ind Ltd | Laser marker and marking method, mark viewer and viewing method |
| JPH11156564A (en) * | 1997-11-28 | 1999-06-15 | Toshiba Ceramics Co Ltd | Heat resistant transparent member and manufacture |
| JP2001080297A (en) * | 1999-09-17 | 2001-03-27 | Kazuo Sato | Method for producing letter diagram of transparent body |
| US6392683B1 (en) | 1997-09-26 | 2002-05-21 | Sumitomo Heavy Industries, Ltd. | Method for making marks in a transparent material by using a laser |
| EP1293490A1 (en) * | 2001-09-13 | 2003-03-19 | Shin-Etsu Chemical Co., Ltd. | Internally marked quartz glass and marking method |
| US6961078B2 (en) * | 2002-05-29 | 2005-11-01 | Central Glass Company, Limited | Method for putting color to glass |
| EP1649323A2 (en) * | 2003-07-18 | 2006-04-26 | Uclt Ltd. | Method for correcting critical dimension variations in photomasks |
| JP2006320393A (en) * | 2005-05-17 | 2006-11-30 | Shogo Arai | Identification and verification method for ashes |
| JP2007523371A (en) * | 2004-02-17 | 2007-08-16 | トッパン、フォウタマスクス、インク | A method of communicating information associated with a photomask and a photomask substrate. |
| FR2899852A3 (en) * | 2006-04-13 | 2007-10-19 | Renault Sas | Glazed element for a motor vehicle, comprises obscuring design of an external light radiation, where the glazed element is separating an external zone and an internal zone |
| JPWO2005032707A1 (en) * | 2003-10-03 | 2007-11-15 | 独立行政法人産業技術総合研究所 | Fluid control method |
| DE102009059015A1 (en) * | 2009-12-17 | 2012-03-01 | Heraeus Quarzglas Gmbh & Co. Kg | Quartz glass component with opaque inner zone and method of making the same |
| JPWO2016084902A1 (en) * | 2014-11-27 | 2017-11-09 | テクノクオーツ株式会社 | Products with management information |
-
1990
- 1990-07-10 JP JP2183681A patent/JPH0471792A/en active Pending
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0743128A1 (en) * | 1995-05-12 | 1996-11-20 | NAICOTEC GmbH | Process and device for marking products of transparent (solid) material with a laser |
| US5837963A (en) * | 1995-08-02 | 1998-11-17 | Tdk Corporation | Method of manufacturing a thin film magnetic head with identification marks |
| US6587136B2 (en) | 1997-09-26 | 2003-07-01 | Sumitomo Heavy Industries Ltd. | Method for making marks in a transparent material by using a laser |
| US6392683B1 (en) | 1997-09-26 | 2002-05-21 | Sumitomo Heavy Industries, Ltd. | Method for making marks in a transparent material by using a laser |
| US6417879B2 (en) | 1997-09-26 | 2002-07-09 | Sumitomo Heavy Industries, Ltd. | Method for making marks in a transparent material by using a laser |
| US6501499B2 (en) | 1997-09-26 | 2002-12-31 | Sumitomo Heavy Industries, Ltd. | Method for making marks in a transparent material by using a laser |
| JPH11138896A (en) * | 1997-11-07 | 1999-05-25 | Sumitomo Heavy Ind Ltd | Laser marker and marking method, mark viewer and viewing method |
| JPH11156564A (en) * | 1997-11-28 | 1999-06-15 | Toshiba Ceramics Co Ltd | Heat resistant transparent member and manufacture |
| JP2001080297A (en) * | 1999-09-17 | 2001-03-27 | Kazuo Sato | Method for producing letter diagram of transparent body |
| US6744458B2 (en) | 2001-09-13 | 2004-06-01 | Shin-Etsu Chemical Co., Ltd. | Internally marked quartz glass, quartz glass substrate for optical member, and marking method |
| EP1293490A1 (en) * | 2001-09-13 | 2003-03-19 | Shin-Etsu Chemical Co., Ltd. | Internally marked quartz glass and marking method |
| US6961078B2 (en) * | 2002-05-29 | 2005-11-01 | Central Glass Company, Limited | Method for putting color to glass |
| EP1649323A2 (en) * | 2003-07-18 | 2006-04-26 | Uclt Ltd. | Method for correcting critical dimension variations in photomasks |
| EP1649323A4 (en) * | 2003-07-18 | 2012-03-07 | Zeiss Carl Sms Ltd | Method for correcting critical dimension variations in photomasks |
| JPWO2005032707A1 (en) * | 2003-10-03 | 2007-11-15 | 独立行政法人産業技術総合研究所 | Fluid control method |
| JP2007523371A (en) * | 2004-02-17 | 2007-08-16 | トッパン、フォウタマスクス、インク | A method of communicating information associated with a photomask and a photomask substrate. |
| JP2006320393A (en) * | 2005-05-17 | 2006-11-30 | Shogo Arai | Identification and verification method for ashes |
| FR2899852A3 (en) * | 2006-04-13 | 2007-10-19 | Renault Sas | Glazed element for a motor vehicle, comprises obscuring design of an external light radiation, where the glazed element is separating an external zone and an internal zone |
| DE102009059015A1 (en) * | 2009-12-17 | 2012-03-01 | Heraeus Quarzglas Gmbh & Co. Kg | Quartz glass component with opaque inner zone and method of making the same |
| DE102009059015B4 (en) * | 2009-12-17 | 2014-02-13 | Heraeus Quarzglas Gmbh & Co. Kg | Quartz glass component with opaque inner zone and method of making the same |
| JPWO2016084902A1 (en) * | 2014-11-27 | 2017-11-09 | テクノクオーツ株式会社 | Products with management information |
| US10572860B2 (en) | 2014-11-27 | 2020-02-25 | Techno Quartz Inc. | Product provided with management information |
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