JPH0462139B2 - - Google Patents
Info
- Publication number
- JPH0462139B2 JPH0462139B2 JP58225663A JP22566383A JPH0462139B2 JP H0462139 B2 JPH0462139 B2 JP H0462139B2 JP 58225663 A JP58225663 A JP 58225663A JP 22566383 A JP22566383 A JP 22566383A JP H0462139 B2 JPH0462139 B2 JP H0462139B2
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- electron beam
- disk
- recording
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010894 electron beam technology Methods 0.000 claims description 25
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 229920002301 cellulose acetate Polymers 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- -1 TeO 2 Inorganic materials 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/10—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electron beam; Record carriers therefor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optical Recording Or Reproduction (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】
(1) 発明の技術分野
本発明は電子ビーム記録用デイスク、詳しくは
書込み読出しに用いるビームを電子ビームで行う
大容量記録デイスクに関する。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to an electron beam recording disk, and more particularly to a large capacity recording disk in which an electron beam is used for writing and reading.
(2) 技術の背景
記録の書込みおよび読出しに光デイスクを用い
る技術が知られている。それを第１図の一部断面
を示す斜視図を参照して説明すると、光デイスク
１（それは１つの円板である）に溝２が同心状に
形成され、溝２の間のトラツク３に開口部４が形
成されている。トラツク３はどの位置にあるかは
前以つて定められており、特定のトラツクの上に
デイジタル方式で開口部４を設けるか否かを
“１”と“０”の信号に対応させるとすると、ト
ラツク４に開口部を形成しまたはしないことによ
つて記録の書込みがなされ、またそれを検知する
ことによつて記録の読出しがなされる。(2) Background of the technology The technology of using optical disks for writing and reading records is known. To explain this with reference to the partially sectional perspective view of FIG. An opening 4 is formed. Assuming that the position of the track 3 is determined in advance, and whether or not an opening 4 is to be provided above a particular track is made to correspond to signals of "1" and "0" in a digital manner, Recording is performed by forming or not forming an opening in the track 4, and reading is performed by detecting this.
溝２の幅は0.7μm〜0.8μm程度に微小化されて
いるが、光ビーム（例えばレーザビーム）を用い
る記録の書込みと読出しでは光ビームの解析限界
に近づいていて光ビームを前記した長さの径より
も小に絞り込むことはできない。そこで光の代り
に電子ビーム（electron beam，EB）を用いる
技術が開発されつつあり、電子ビームは500Å径
にまで絞り込むことができるので、高密度の記録
の書込みと読出しが可能となる。このような電子
ビームを用いて作成する記録媒体はEBデイスク
と呼称されるが、本発明はEBデイスクの改良に
係わるものである。 The width of the groove 2 has been miniaturized to about 0.7 μm to 0.8 μm, but in writing and reading records using a light beam (for example, a laser beam), it is approaching the analytical limit of the light beam, and the width of the light beam is reduced to the above-mentioned length. cannot be narrowed down to a diameter smaller than the diameter of Therefore, technology is being developed that uses electron beams (EBs) instead of light, and since electron beams can be focused down to a diameter of 500 Å, it becomes possible to write and read high-density records. A recording medium created using such an electron beam is called an EB disk, and the present invention relates to improvement of the EB disk.
(3) 従来技術と問題点
従来の電子ビーム用デイスクは弱い電子ビーム
を照射してその時に反射される二次電子を検知器
によつて読み出していた。そのため読出し用の検
知器を真空系内に置かなければならず、真空系に
おいて余分な体積を必要としていた。そこで前記
二次電子の検知をかかる真空系内に配置される検
知器を用いることなくなしうる電子ビーム記録用
デイスクが要望されている。(3) Prior Art and Problems Conventional electron beam disks emit a weak electron beam and read out the secondary electrons reflected by a detector. Therefore, the readout detector had to be placed in the vacuum system, which required extra volume in the vacuum system. Therefore, there is a need for an electron beam recording disk that can detect the secondary electrons without using a detector placed in such a vacuum system.
(4) 発明の目的
本発明は上記従来の問題に鑑み、電子ビーム用
デイスクにおいて真空系内に配置された電子ビー
ムの検知器なしで、読出しの行なえる電子ビーム
記録用デイスクを提供することを目的とするもの
である。(4) Purpose of the Invention In view of the above-mentioned conventional problems, the present invention aims to provide an electron beam recording disk that can be read without an electron beam detector placed in a vacuum system. This is the purpose.
(5) 発明の構成
そしてこの目的は本発明によれば、デイスク基
板上に導電性層および該導電性層上の熱可溶性の
除去可能な非導電性層が形成され、記録は該非導
電性層に電子ビームを照射し非導電性層の被照射
部分に開口部を形成することによつてなし、読出
しは、前記電子ビームより弱い第２の電子ビーム
を該非導電性層に照射し開口部から導電性層を通
して流れる電子により発生する電流を検知してな
す構成を特徴とする電子ビーム記録用デイスクを
提供することによつて達成される。(5) Structure of the Invention According to the present invention, a conductive layer and a heat-soluble removable non-conductive layer on the conductive layer are formed on the disk substrate, and recording is performed on the non-conductive layer. The reading is performed by irradiating the non-conductive layer with an electron beam and forming an opening in the irradiated portion of the non-conductive layer, and reading is performed by irradiating the non-conductive layer with a second electron beam, which is weaker than the electron beam, through the opening. This is achieved by providing an electron beam recording disk characterized by a configuration that detects a current generated by electrons flowing through a conductive layer.
(6) 発明の実施例 以下本発明実施例を図面によつて詳説する。(6) Examples of the invention Embodiments of the present invention will be explained in detail below with reference to the drawings.
本発明者は、デイスク形状として導電性層上に
非導電性薄膜層を設け、書込みは非導電性薄膜を
電子ビーム照射により除去することにより行い、
読出しは弱い電子ビーム照射により書込み部と非
書込み部ではデイスクへの電子の流れる量が異な
ることを利用して行うことを考えた。そして非導
電層としては、酢酸セルロース、塩化ビニル、
PMMA，PVC，コロジオンなどの有機薄膜や
MgF2，SiO2，CaF2，MgO，TeO2，GeO2など
の無機薄膜を用いるとよいことを確認した。 The present inventor provided a non-conductive thin film layer on a conductive layer in the form of a disk, and performed writing by removing the non-conductive thin film by electron beam irradiation.
The idea was to perform reading by utilizing the fact that the amount of electrons flowing to the disk differs between the writing area and the non-writing area by irradiating a weak electron beam. And as a non-conductive layer, cellulose acetate, vinyl chloride,
Organic thin films such as PMMA, PVC, and collodion
It was confirmed that inorganic thin films such as MgF 2 , SiO 2 , CaF 2 , MgO, TeO 2 , and GeO 2 can be used.
本発明の実施例においては、第２図の断面図に
示される如く、EBデイスクを構成する厚さ２mm
のガラス基板２１上に導電性層として100μmの厚
さにアルミニウムAl導電層２２を真空蒸着法で
形成した後に、非導電性層として熱溶融し易い絶
縁性をもつた酢酸セルロース層２３をスピンコー
ト法により0.1μmの厚さに形成して情報記録デイ
スクを作る。 In the embodiment of the present invention, as shown in the cross-sectional view of FIG. 2, the thickness of the EB disk is 2 mm.
After forming an aluminum conductive layer 22 with a thickness of 100 μm as a conductive layer on a glass substrate 21 using a vacuum evaporation method, a cellulose acetate layer 23 having insulating properties that is easily melted by heat is spin-coated as a non-conductive layer. An information recording disk is made by forming the disk to a thickness of 0.1 μm using the method.
次いで第３図に示される如く上記の情報記録用
のEBデイスク２１に対し、10-3パスカルPa程度
の真空中において、スポツト径が500Åの電子ビ
ーム２４を、50KeVに加速して照射し、照射領
域において酢酸セルロース層２３を局部的に溶融
して開口部２５を形成して情報の書込みを行つ
た。このようにして形成されたEBデイスクのト
ラツクと開口部とは第１図に示したものと全く同
じ構造であるが、それは高密度である点において
従来の光デイスクとは異なるものである。 Next, as shown in FIG. 3, the information recording EB disk 21 is irradiated with an electron beam 24 with a spot diameter of 500 Å accelerated to 50 KeV in a vacuum of about 10 -3 Pascal Pa. In the region, the cellulose acetate layer 23 was locally melted to form an opening 25 to write information. Although the tracks and openings of the EB disk thus formed are exactly the same as those shown in FIG. 1, it differs from conventional optical disks in that it has a high density.
次に比較的弱い例えば上記の照射ビームの1/10
程度の第２の電子ビーム３０を照射した。開口部
２５ではAl導電層２２を通つて電子が流れるた
め、EBデイスク２１のAl導電層２２とつながつ
ている電流検知器３３（第４図参照）により電流
の有無が検知され、読出しが行われた。 Next, relatively weak e.g. 1/10 of the above irradiation beam
The second electron beam 30 was irradiated with a certain amount. Since electrons flow through the Al conductive layer 22 in the opening 25, the presence or absence of current is detected by the current detector 33 (see Figure 4) connected to the Al conductive layer 22 of the EB disk 21, and reading is performed. Ta.
操作においては第４図に示される如く、EBデ
イスク２１は電子ビーム装置３１内に取り付けら
れ、電流はモータ３２の軸を通り電流検知器３３
まで流れて信号読出しが行なえる。なお第４図に
おいて、３４は電子銃、３５はコントローラ、３
６は電子レンズ、３７は偏向器、３８は排気ポン
プを示す。従来技術において二次電子検知器は符
号３９を付して点線で示す如くに配置されていた
ものである。図示の装置は公知のものであるので
それの詳細な説明は省略する。 In operation, as shown in FIG.
The signal can be read out. In FIG. 4, 34 is an electron gun, 35 is a controller, and 3
6 is an electron lens, 37 is a deflector, and 38 is an exhaust pump. In the prior art, the secondary electron detector is designated by the reference numeral 39 and is arranged as shown by the dotted line. Since the illustrated device is well known, detailed description thereof will be omitted.
(7) 発明の効果
以上詳細に説明した如く本発明によれば、真空
装置内に電子ビーム検出器のない装置に使用でき
る電子ビーム記録用デイスクを提供することがで
き、かかるデイスクは保管性に優れたものである
利点がある。(7) Effects of the Invention As described in detail above, according to the present invention, it is possible to provide an electron beam recording disk that can be used in a device that does not have an electron beam detector in a vacuum device, and such a disk has excellent storage performance. It has the advantage of being superior.
なお上記の実施例においては導電性層はAl層、
非導電性層は酢酸セルロースで作つたが、本発明
の適用範囲はその場合に限定されるものではな
く、その他の導電性材料および熱可溶性非導電性
材料を用いる場合にもおよぶものである。 Note that in the above embodiments, the conductive layer is an Al layer,
Although the non-conductive layer was made of cellulose acetate, the scope of the present invention is not limited thereto, but extends to the use of other conductive materials and heat-soluble non-conductive materials.
第１図は光デイスクの一部断面を示す斜視図、
第２図は本発明にかかるEBデイスクの部分的断
面図、第３図はEB照射後の第２図のEBデイスク
の部分的断面図、第４図は第３図に示すデイスク
を読み出す装置の断面図である。
２１……EBデイスク、２２……Al層、２３…
…酢酸セルロース層、２４……EB、２５……開
口部。
FIG. 1 is a perspective view showing a partial cross section of an optical disk;
FIG. 2 is a partial sectional view of the EB disk according to the present invention, FIG. 3 is a partial sectional view of the EB disk of FIG. 2 after EB irradiation, and FIG. 4 is a partial sectional view of the EB disk of FIG. FIG. 21...EB disk, 22...Al layer, 23...
...cellulose acetate layer, 24...EB, 25...opening.
Claims (1)
上の熱可溶性の除去可能な非導電性層が形成さ
れ、 記録は該非導電性層に電子ビームを照射し非導
電性層の被照射部分に開口部を形成することによ
つてなし、 読出しは、前記電子ビームより弱い第２の電子
ビームを該非導電性層に照射し開口部から導電性
層を通して流れる電子により発生する電流を検知
してなす構成を特徴とする電子ビーム記録用デイ
スク。[Claims] 1. A conductive layer and a heat-fusible removable non-conductive layer on the conductive layer are formed on a disk substrate, and recording is performed by irradiating the non-conductive layer with an electron beam to make the non-conductive layer This is done by forming an aperture in the irradiated portion of the layer, and readout occurs by irradiating the non-conductive layer with a second electron beam weaker than the electron beam and causing electrons to flow from the aperture through the conductive layer. An electron beam recording disk characterized by a configuration that detects current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22566383A JPS60117434A (en) | 1983-11-30 | 1983-11-30 | Electron beam recording disc |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22566383A JPS60117434A (en) | 1983-11-30 | 1983-11-30 | Electron beam recording disc |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60117434A JPS60117434A (en) | 1985-06-24 |
| JPH0462139B2 true JPH0462139B2 (en) | 1992-10-05 |
Family
ID=16832823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22566383A Granted JPS60117434A (en) | 1983-11-30 | 1983-11-30 | Electron beam recording disc |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60117434A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2757887B2 (en) * | 1986-02-17 | 1998-05-25 | 株式会社島津製作所 | How to record and read information |
| JPH0766575B2 (en) * | 1986-02-17 | 1995-07-19 | 株式会社日立製作所 | Information reproducing device by electron beam |
| JP2892022B2 (en) * | 1989-01-13 | 1999-05-17 | シャープ株式会社 | Recording element |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5775896A (en) * | 1980-10-31 | 1982-05-12 | Toshiba Corp | Data recording member |
| JPS58158056A (en) * | 1982-03-16 | 1983-09-20 | Nippon Telegr & Teleph Corp <Ntt> | Laser recording medium and its manufacture |
-
1983
- 1983-11-30 JP JP22566383A patent/JPS60117434A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5775896A (en) * | 1980-10-31 | 1982-05-12 | Toshiba Corp | Data recording member |
| JPS58158056A (en) * | 1982-03-16 | 1983-09-20 | Nippon Telegr & Teleph Corp <Ntt> | Laser recording medium and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60117434A (en) | 1985-06-24 |
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