JPH0456289A - Manufacture of thin oxide superconductor film - Google Patents
Manufacture of thin oxide superconductor filmInfo
- Publication number
- JPH0456289A JPH0456289A JP2165670A JP16567090A JPH0456289A JP H0456289 A JPH0456289 A JP H0456289A JP 2165670 A JP2165670 A JP 2165670A JP 16567090 A JP16567090 A JP 16567090A JP H0456289 A JPH0456289 A JP H0456289A
- Authority
- JP
- Japan
- Prior art keywords
- film
- superconductor
- gas
- fine particles
- mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010408 film Substances 0.000 claims abstract description 37
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000010419 fine particle Substances 0.000 claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 abstract description 19
- 238000000034 method Methods 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 11
- 239000013078 crystal Substances 0.000 abstract description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 9
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000843 powder Substances 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011362 coarse particle Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 5
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 229910052697 platinum Inorganic materials 0.000 abstract description 4
- 229910052786 argon Inorganic materials 0.000 abstract description 3
- 230000006698 induction Effects 0.000 abstract description 3
- YRAJNWYBUCUFBD-UHFFFAOYSA-N 2,2,6,6-tetramethylheptane-3,5-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(C)(C)C YRAJNWYBUCUFBD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052788 barium Inorganic materials 0.000 abstract description 2
- 229910002929 BaSnO3 Inorganic materials 0.000 abstract 1
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
- 239000011364 vaporized material Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 241000282994 Cervidae Species 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- ZCCIPPOKBCJFDN-UHFFFAOYSA-N calcium nitrate Chemical compound [Ca+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ZCCIPPOKBCJFDN-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- UJVRJBAUJYZFIX-UHFFFAOYSA-N nitric acid;oxozirconium Chemical compound [Zr]=O.O[N+]([O-])=O.O[N+]([O-])=O UJVRJBAUJYZFIX-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、酸化物超電導体薄膜の製造方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for producing an oxide superconductor thin film.
［従来の技術］
従来、臨界温度が液体窒素温度以上である酸化物超電導
体の薄膜は、種々のＰＶＤ法（スパッタ法、蒸着法、レ
ーザービーム蒸着法など）や、ＣＶＤ法などで気相から
作製されてきた。[Prior Art] Conventionally, thin films of oxide superconductors whose critical temperature is higher than liquid nitrogen temperature have been produced from the gas phase by various PVD methods (sputtering, vapor deposition, laser beam deposition, etc.) or CVD methods. has been created.
いずれの方法でも、作製条件を適正に選ぶことにより、
液体窒素温度、Ｏ磁場下では１００万Ａ／ｃｍ”以上の
高い臨界電流密度を有する薄膜が得られるようになって
きている。In either method, by appropriately selecting the production conditions,
It has become possible to obtain thin films having high critical current densities of 1 million A/cm'' or more at liquid nitrogen temperatures and in an O magnetic field.
［発明が解決しようとする課題］
しかしながら、超電導電磁石などの応用には数テスラ以
上の強い磁場下で１０万Ａ／ｃｍ２以上の電流を流せる
材料が求められており、これまで得られた薄膜は磁場下
、特に、Ｃｕ−０面に垂直に磁場を印加した場合に大き
な電流が流せないことが問題となっている。[Problem to be solved by the invention] However, for applications such as superconducting electromagnets, a material that can flow a current of 100,000 A/cm2 or more under a strong magnetic field of several Tesla or more is required, and the thin films obtained so far are A problem is that a large current cannot flow under a magnetic field, particularly when a magnetic field is applied perpendicular to the Cu-0 plane.
この原因は、酸化物超電導体の単結晶を用いた実験結果
から、磁場下で電流の印加による磁束の移動を十分に抑
制できていないためと考えられている。磁場下で磁束の
移動を抑制するためには適切なビン止め中心を超電導体
内に導入することが必要である。非超電導体の微粒子や
、薄膜では電流方向に平行な微少なりラックなどがビン
止め中心になると考えられているが、そのような薄膜を
制御して作製する方法は未だ確立されていない。本発明
の目的は、酸化物超電導体の薄膜内に、非超電導体の微
粒子を分散させる方法を提供することである。The reason for this is thought to be that the movement of magnetic flux due to the application of current under a magnetic field cannot be sufficiently suppressed, based on experimental results using a single crystal of an oxide superconductor. In order to suppress the movement of magnetic flux under a magnetic field, it is necessary to introduce a suitable binning center into the superconductor. It is thought that fine particles of non-superconducting materials or small racks parallel to the current direction in the case of thin films are the center of binding, but a method for controlling the production of such thin films has not yet been established. An object of the present invention is to provide a method for dispersing fine particles of a non-superconductor within a thin film of an oxide superconductor.
［課題を解決するための手段］
本発明は、酸化物超電導体薄膜を気相から製造する方法
において、成膜時に導入する気体中に非超電導体の微粒
子を混合して供給し、超電導体薄膜中に非超電導体の微
粒子を分散させながら成膜することを特徴とする酸化物
超電導体薄膜の製造方法を提供するものである。[Means for Solving the Problems] The present invention provides a method for producing an oxide superconductor thin film from a gas phase, in which fine particles of a non-superconductor are mixed and supplied into the gas introduced during film formation, and the superconductor thin film is The present invention provides a method for producing an oxide superconductor thin film, which is characterized in that the film is formed while fine particles of a non-superconductor are dispersed therein.
酸化物超電導薄膜の製造方法においては、通常成膜時に
酸化するための酸素や、プラズマを発生するためや気化
した原料を反応容器に運ぶためのアルゴンなどの気体を
導入しながら製膜する。本発明においては、導入する気
体中に非超電導体の微粒子を混合浮遊させて供給し、基
体上に超電導体構成元素と同時に堆積させ、非超電導粒
子を均一に超電導体薄膜内に分散させる。したがって、
製膜方法は各種のＰＶＤ法、ＣＶＤ法を問わず適用可能
である。In the manufacturing method of oxide superconducting thin films, the film is usually formed while introducing gases such as oxygen for oxidation and argon for generating plasma and transporting vaporized raw materials to a reaction vessel. In the present invention, fine particles of a non-superconductor are mixed and suspended in the introduced gas, deposited on the substrate simultaneously with the superconductor constituent elements, and the non-superconductor particles are uniformly dispersed within the superconductor thin film. therefore,
The film forming method can be applied regardless of various PVD methods or CVD methods.
微粒子として用いる非超電導体としては超電導体構成元
素との反応性が低く、かつ、基板温度で溶融しないこと
が好ましい。この観点から、非超電導体としてはＡ、Ｂ
Ｏ，（ＡはＭｇ、 Ｃａ、Ｓｒ、Ｂａからなる群から選
ばれた１種以上、ＢはＳｎ、Ｓｉ、 Ｃｅ、 Ｔｉ、
Ｚｒからなる群から選ばれた１種以上、１≦Ｘ≦２．３
≦ｙ≦４）の組成式で表される化合物を用いることが好
ましい。It is preferable that the non-superconductor used as the fine particles has low reactivity with the superconductor constituent elements and does not melt at the substrate temperature. From this point of view, A and B are non-superconductors.
O, (A is one or more selected from the group consisting of Mg, Ca, Sr, Ba, B is Sn, Si, Ce, Ti,
One or more species selected from the group consisting of Zr, 1≦X≦2.3
It is preferable to use a compound represented by a composition formula of ≦y≦4).
微粒子をガス中に混合浮遊させるには種々の方法を用い
ることができる。例えば、非超電導体の前駆体の水溶液
をガス中に噴霧し、このガスを熱分解炉に通して非超電
導体の固体微粒子を生成させた後、超電導体製膜装置に
導入する方法を用いることができる。また、微粒子を超
音波や回転式混合器あるいは気体をバブルさせてガス中
に浮遊させる装置を用いてもよい。これらの装置を用い
る際には粗粒子を除くため、サイクロンの様な粗粒を分
溜する装置を用いることが望ましい。Various methods can be used to mix and suspend fine particles in a gas. For example, a method may be used in which an aqueous solution of a non-superconductor precursor is sprayed into a gas, the gas is passed through a pyrolysis furnace to generate solid fine particles of a non-superconductor, and then introduced into a superconductor film forming apparatus. I can do it. Further, it is also possible to use ultrasonic waves, a rotary mixer, or a device that causes gas to bubble and suspend the particles in the gas. When using these devices, in order to remove coarse particles, it is desirable to use a device that fractionates coarse particles, such as a cyclone.
［実施例］
実施例１
第１図に示すＣＶＤ成膜装置を使用した。原料としてＹ
、 Ｂａ、 Ｃｕのジピバロイルメタン錯体を使用し
、原料蒸発器をそれぞれ１２０ 、２４０．１１０℃に
加熱し、各蒸発器にアルゴンガスをそれぞれ５０ｓｅｃ
ｍ （ｓｃｃｍ ：標準状態の気体に換算して１ ｃｃ
／分）の流量で流して気化した原料を反応容器へ導入し
た。一方、平均粒径１００Å以下のＢａ５ｎＯｉ粉末を
粉末混合器に入れスターラーで撹拌して粉末を浮遊させ
ところに酸素ガスを導入して酸素ガス中に該粉末を混合
した。この混合ガスをサイクロンに通し粗粒を分級した
後、１４０ｓｅｃｍの流量で反応管に導入した。[Examples] Example 1 A CVD film forming apparatus shown in FIG. 1 was used. Y as a raw material
Using dipivaloylmethane complexes of , Ba, and Cu, the raw material evaporators were heated to 120 °C, 240 °C, and 110 °C, respectively, and argon gas was supplied to each evaporator for 50 sec.
m (sccm: 1 cc converted to standard gas
/min) to introduce the vaporized raw material into the reaction vessel. On the other hand, Ba5nOi powder having an average particle size of 100 Å or less was placed in a powder mixer and stirred with a stirrer to suspend the powder, and oxygen gas was introduced thereto to mix the powder in the oxygen gas. This mixed gas was passed through a cyclone to classify coarse particles, and then introduced into the reaction tube at a flow rate of 140 seconds.
基板として［１００］面を研磨した５ｒＴｉＯｘ結晶基
板を、高周波誘導により８５０ ’Ｃに加熱した白金サ
セプター上に置いて、上記ガスを導入しながら圧力２４
ｍｍＨｇ、成膜速度０．２μｍ／ｈの速度で２時間成膜
した。成膜後１気圧の酸素を反応管に満たし、１０℃／
ｈの速度で白金サセプタを冷却し、１００℃まで温度が
低下したところで基板を取り出した。As a substrate, a 5rTiOx crystal substrate with a polished [100] plane was placed on a platinum susceptor heated to 850'C by high frequency induction, and the above gas was introduced at a pressure of 24°C.
The film was formed for 2 hours at mmHg and a film formation rate of 0.2 μm/h. After film formation, the reaction tube was filled with 1 atm of oxygen and heated at 10℃/
The platinum susceptor was cooled at a rate of h, and the substrate was taken out when the temperature dropped to 100°C.
成膜した膜をＸ線回折装置で調べたところＣ軸が膜面に
垂直に配向したＹＢａ−Ｃｕ、Ｏ，結晶とＢａ５ｎＯｘ
結晶の混合回折図が得られた。さらに膜の組成を蛍光Ｘ
線を用いて定量分析したところ、Ｙ：Ｂａ：Ｃｕ：Ｓｎ
の原子比は１．００：２．１５：３．０２：０．１７で
あった。この膜の組織を透過型電子顕微鏡で観察したと
ころ、マトリックス中に粒径１００人程鹿の粒子が均一
に分散しているのが確認された。Examination of the formed film using an X-ray diffraction device revealed that the C-axis was oriented perpendicular to the film surface, YBa-Cu, O, crystal and Ba5nOx.
A mixed diffractogram of the crystals was obtained. Furthermore, the composition of the film was determined using fluorescent X
Quantitative analysis using lines revealed that Y:Ba:Cu:Sn
The atomic ratio of was 1.00:2.15:3.02:0.17. When the structure of this film was observed using a transmission electron microscope, it was confirmed that deer particles with a particle size of about 100 were uniformly dispersed in the matrix.
この試料を幅５００μｍにバターニングして直流四端子
法を用い７７Ｋ、５テスラの磁場化で臨界電流密度を測
定したところ、１９０，０００ Ａ／ａｍ”であった。This sample was patterned to a width of 500 μm, and the critical current density was measured using a DC four-terminal method in a magnetic field of 77 K and 5 Tesla, and found to be 190,000 A/am.
測定時に磁場は膜面に垂直に印加した。During the measurement, the magnetic field was applied perpendicular to the film surface.
比較例１
酸素ガスを粉末混合器、サイクロンを通さずに直接反応
管に導入した以外は実施例１と同様にして成膜した。Comparative Example 1 A film was formed in the same manner as in Example 1, except that oxygen gas was introduced directly into the reaction tube without passing through a powder mixer or cyclone.
得られた膜をＸ線回折装置で調べたところＣ軸が膜面に
垂直に配向したＹＢａｉＣｕ３０ｙ結晶の単−回折図が
得られた。得られた膜の原子比、Ｙ：Ｂａ：Ｃｕ＋Ｓｎ
は１．００：１．９９：３．０３：０．００であった。When the obtained film was examined using an X-ray diffractometer, a single diffraction pattern of YBaiCu30y crystal in which the C axis was oriented perpendicular to the film surface was obtained. Atomic ratio of the obtained film, Y:Ba:Cu+Sn
was 1.00:1.99:3.03:0.00.
臨界電流密度（７７Ｋ、５テスラ）を実施例１と同様に
測定したところ、９０００ Ａ／ｃｍ”であった。The critical current density (77K, 5 Tesla) was measured in the same manner as in Example 1 and found to be 9000 A/cm''.
実施例２
第２図に示す反応蒸着装置を使用した。原料としてＢｉ
、 Ｓｒ、 Ｃａ、Ｃｕの金属を使用し、原料蒸発源（
クヌーセンセル）をそれぞれ７８０．８３０゜８９０
、１２００℃に加熱した。一方、硝酸カルシウムと硝酸
ジルコニルの混合水溶液を超音波噴霧器に入れ超音波で
微小な霧状の水滴を生成させて酸素ガス中に浮遊させた
。この酸素ガスを管状炉に導き１１００℃で熱分解して
ＣａＺｒ０□の微粒子を酸素ガス中に生成させ、サイク
ロンに通して粗粒を分級した後１０１０５ｅの流量で真
空容器に導入した。Example 2 A reactive vapor deposition apparatus shown in FIG. 2 was used. Bi as a raw material
, Sr, Ca, and Cu metals are used as the raw material evaporation source (
Knudsen cell) respectively 780.830°890
, heated to 1200°C. On the other hand, a mixed aqueous solution of calcium nitrate and zirconyl nitrate was placed in an ultrasonic atomizer and ultrasonic waves were used to generate fine water droplets that were suspended in oxygen gas. This oxygen gas was introduced into a tube furnace and thermally decomposed at 1100° C. to produce fine particles of CaZr0□ in the oxygen gas, passed through a cyclone to classify coarse particles, and then introduced into a vacuum vessel at a flow rate of 10105e.
基板として［１００］面を研磨した５ｒＴｉ０３結晶基
板を、白金ヒーターにより６５０℃に加熱し、上記ガス
を導入しながら圧力４ Ｘ １０−’ｔｏｒｒ、成膜速
度０．２μｍ／ｈの速度で、高周波誘導コイルにより基
板近傍にプラズマを発生しながら２時間成膜した。成膜
後、酸素ガスを超音波噴霧器、管状炉、サイクロンを通
さず、直接真空容器に導入し、プラズマを発生した状態
でｌＯ℃／ｈの速度で冷却した。基板温度が１００℃ま
で温度が低下したところで基板を取り出した。As a substrate, a 5rTi03 crystal substrate with a polished [100] plane was heated to 650°C with a platinum heater, and the above gas was introduced while high frequency was applied at a pressure of 4 x 10-'torr and a film formation rate of 0.2 μm/h. The film was formed for 2 hours while generating plasma near the substrate using an induction coil. After film formation, oxygen gas was directly introduced into the vacuum container without passing through an ultrasonic atomizer, a tube furnace, or a cyclone, and the film was cooled at a rate of 10° C./h while generating plasma. When the substrate temperature decreased to 100° C., the substrate was taken out.
成膜した膜をＸ線回折装置で調べたところＣ軸が膜面に
垂直に配向したＢｉ２５ｒｚＣａＣｕｚＯ，結晶とＣａ
ｒｒｙ３結晶の混合回折図が得られた。さらに膜の組成
を蛍光Ｘｌｌを用いて定量分析したところ、Ｂｉ：Ｓｒ
＋Ｃａ：Ｃｕ：Ｚｒの原子比は２．００：２．０３：１
．０９：２．０１：０．１０であった。この膜の組織を
透過型電子顕微鏡で観察したところ、マトリックス中に
粒径１００人程鹿の粒子が均一に分散しているのが確認
された。Examination of the formed film using an X-ray diffraction device revealed that the C-axis was oriented perpendicular to the film surface, Bi25rzCaCuzO, crystals and Ca.
A mixed diffractogram of rry3 crystals was obtained. Furthermore, when the composition of the film was quantitatively analyzed using fluorescence Xll, it was found that Bi:Sr
+The atomic ratio of Ca:Cu:Zr is 2.00:2.03:1
．． It was 09:2.01:0.10. When the structure of this film was observed using a transmission electron microscope, it was confirmed that deer particles with a particle size of about 100 were uniformly dispersed in the matrix.
この試料を幅５００μｍにバターニングして直流四端子
法を用い７７に、２テスラの磁場化で臨界電流密度を測
定したところ、１１０，０００ Ａ／ｃｍ”であった。This sample was patterned to a width of 500 μm, and the critical current density was measured using a DC four-probe method with a magnetic field of 2 Tesla, and found to be 110,000 A/cm.
測定時に磁場は膜面に垂直に印加した。During the measurement, the magnetic field was applied perpendicular to the film surface.
比較例２
酸素ガスを超音波噴霧器、管状炉、サイクロンを通さず
に直接真空容器に導入した以外は実施例２と同様にして
成膜した。Comparative Example 2 A film was formed in the same manner as in Example 2, except that oxygen gas was directly introduced into the vacuum container without passing through an ultrasonic atomizer, a tube furnace, or a cyclone.
得られた膜をＸ線回折装置で調べたところＣ軸が膜面に
垂直に配向したＢｉｘ５ｒａＣａＣｕｚＯ，結晶の単一
回折図が得られた。得られた膜の原子比Ｂｉ：Ｓｒ：Ｃ
ａ：Ｃｕ：Ｚｒは２．００＋２．０２：０．９９：２．
０２：０．００であった。臨界電流密度（７７に、 ２
テスラ）を実施例２と同様に測定したところ、４０００
Ａ／ｃｍ”であった。When the obtained film was examined using an X-ray diffractometer, a single diffraction pattern of Bix5raCaCuzO crystal in which the C axis was oriented perpendicular to the film surface was obtained. Atomic ratio of the obtained film Bi:Sr:C
a:Cu:Zr is 2.00+2.02:0.99:2.
It was 02:0.00. Critical current density (77, 2
Tesla) was measured in the same manner as in Example 2 and found to be 4000
A/cm".
［発明の効果］
本発明の製造方法により、酸化物超電導体中に非超電導
体の微粒子が分散した薄膜が得られる。この薄膜は、磁
場下においても、高い臨界電流密度を示す。[Effects of the Invention] According to the manufacturing method of the present invention, a thin film in which fine particles of a non-superconductor are dispersed in an oxide superconductor can be obtained. This thin film exhibits a high critical current density even under a magnetic field.
図１は、実施例１で用いたＣＶＤ製膜装置の構成を示す
説明図である。
図２は、実施例２で用いた反応蒸着装置の構成を示す説
明図である。FIG. 1 is an explanatory diagram showing the configuration of the CVD film forming apparatus used in Example 1. FIG. 2 is an explanatory diagram showing the configuration of the reactive vapor deposition apparatus used in Example 2.
Claims (1)
て、成膜時に導入する気体中に非超電導体の微粒子を混
合して供給し、超電導体薄膜中に非超電導体の微粒子を
分散させながら成膜することを特徴とする酸化物超電導
体薄膜の製造方法。1. In a method for producing an oxide superconductor thin film from the gas phase, non-superconductor fine particles are mixed and supplied into the gas introduced during film formation, and while the non-superconductor fine particles are dispersed in the superconductor thin film. 1. A method for producing an oxide superconductor thin film, which comprises forming a film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2165670A JPH0456289A (en) | 1990-06-26 | 1990-06-26 | Manufacture of thin oxide superconductor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2165670A JPH0456289A (en) | 1990-06-26 | 1990-06-26 | Manufacture of thin oxide superconductor film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0456289A true JPH0456289A (en) | 1992-02-24 |
Family
ID=15816795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2165670A Pending JPH0456289A (en) | 1990-06-26 | 1990-06-26 | Manufacture of thin oxide superconductor film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0456289A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002276868A (en) * | 2001-03-15 | 2002-09-25 | Noritz Corp | Joint for piping |
-
1990
- 1990-06-26 JP JP2165670A patent/JPH0456289A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002276868A (en) * | 2001-03-15 | 2002-09-25 | Noritz Corp | Joint for piping |
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