JPH0450141A - Glass-ceramic substrate - Google Patents
Glass-ceramic substrateInfo
- Publication number
- JPH0450141A JPH0450141A JP15751890A JP15751890A JPH0450141A JP H0450141 A JPH0450141 A JP H0450141A JP 15751890 A JP15751890 A JP 15751890A JP 15751890 A JP15751890 A JP 15751890A JP H0450141 A JPH0450141 A JP H0450141A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- filler
- ceramic
- particles
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 27
- 239000002241 glass-ceramic Substances 0.000 title claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 69
- 239000000945 filler Substances 0.000 claims abstract description 67
- 239000002245 particle Substances 0.000 claims abstract description 65
- 239000000919 ceramic Substances 0.000 claims abstract description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052878 cordierite Inorganic materials 0.000 claims abstract 2
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910021489 α-quartz Inorganic materials 0.000 claims abstract 2
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- CNLWCVNCHLKFHK-UHFFFAOYSA-N aluminum;lithium;dioxido(oxo)silane Chemical compound [Li+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O CNLWCVNCHLKFHK-UHFFFAOYSA-N 0.000 claims 1
- 229910052644 β-spodumene Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- 238000005245 sintering Methods 0.000 abstract description 10
- 239000000843 powder Substances 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 3
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical group 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 239000004020 conductor Substances 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 239000006060 molten glass Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 239000002002 slurry Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 210000003739 neck Anatomy 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 1
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 1
- 101100348017 Drosophila melanogaster Nazo gene Proteins 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 239000006112 glass ceramic composition Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- Glass Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体または集積回路チップを搭載するため
のガラス−セラミック基板支持体、より具体的には、低
融点金属である金、銀または銅を導体材料とし、これと
誘電率の低いガラス−セラミック複合体とを同時に焼成
した信号伝搬遅延の少ない多層配線基板の製造方法に関
する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a glass-ceramic substrate support for mounting a semiconductor or integrated circuit chip, and more specifically, to a glass-ceramic substrate support for mounting a semiconductor or integrated circuit chip, and more specifically to a glass-ceramic substrate support for mounting a semiconductor or integrated circuit chip. The present invention relates to a method for manufacturing a multilayer wiring board with low signal propagation delay, in which copper is used as a conductive material and copper is simultaneously fired with a glass-ceramic composite having a low dielectric constant.
セラミック多層配線基板は、一般に、モリブデン、タン
グステンなどの高融点金属を導体材料とする。しかし、
これらの導体材料は電気抵抗が高いので、伝送損失が大
きく、雑音の発生を伴うという欠点がある。そこでこれ
らより電気抵抗が低い銅を導体材料として用いた多層配
線基板に対する要求が高まってきた。モリブテン、タン
グステンなどは高温で焼結するため、セラミック基体は
これらの導体材料と同時に焼成できるまた、本発明はフ
ィラとガラス粉末が均一に分散したフィラ、ガラス混合
粉末及び銅、金、銀等の微細な粉末を含む導体インク（
又はペースト）を用いて出発し、いわゆる、「積層グリ
ーン、シート」技術によって、銅、金、銀等の融点より
低い焼成温度でそのような基板を製造するための工程及
び材料に関する。高融点のアルミナを主成分とするセラ
ミックが用いられてきた。アルミナは熱伝導性および強
度が優れているが、誘電率が比較的高いので信号伝送の
遅延を伴うという欠点があり、また、シリコン集積回路
チップをアルミナ系基板にはんだで直接接続する場合、
アルミナとシリコンの熱膨張係数が一致していないため
、動作に伴って発生する熱サイクルのため、はんだ接続
部が破壊するという欠点である。Ceramic multilayer wiring boards generally use high melting point metals such as molybdenum and tungsten as conductor materials. but,
Since these conductor materials have high electrical resistance, they have the drawback of large transmission loss and generation of noise. Therefore, there has been an increasing demand for multilayer wiring boards using copper, which has a lower electrical resistance than these, as a conductor material. Since molybdenum, tungsten, etc. are sintered at high temperatures, the ceramic substrate can be fired at the same time as these conductive materials.Furthermore, the present invention can be used to sinter a filler in which filler and glass powder are uniformly dispersed, a glass mixed powder, and copper, gold, silver, etc. Conductive ink containing fine powder (
The present invention relates to processes and materials for producing such substrates by starting with ``laminated green, sheet'' techniques, starting from ``laminated green, sheet'' technology, and at firing temperatures below the melting points of copper, gold, silver, etc. Ceramics based on high melting point alumina have been used. Alumina has excellent thermal conductivity and strength, but its relatively high dielectric constant causes delays in signal transmission, and when directly connecting silicon integrated circuit chips to alumina-based substrates,
The disadvantage is that the thermal expansion coefficients of alumina and silicon do not match, so the solder joints break due to the thermal cycles that occur during operation.
銅を導体材料とする多層配線基板において、セラミック
基板として銅との同時焼成が可能な９００〜１０００℃
で焼結するガラスとセラミックフィラーを複合したガラ
スセラミックが注目されている。In a multilayer wiring board using copper as a conductive material, a temperature of 900 to 1000°C that allows co-firing with copper as a ceramic board.
Glass-ceramic, which is a composite of glass and ceramic filler, is attracting attention.
従来のガラスセラミック多層基板の製造ではガラスとフ
ィラの粒子径の比が考慮されておらず、はぼ、同一の粒
子径のものが用いられているため、フィラ粒子の回りを
固体のガラス粒子で覆うことが困難で固体のガラス粒子
間、ならびに、フィラ粒子間に大きな空隙を生じる。In the conventional production of glass-ceramic multilayer substrates, the ratio of the particle sizes of glass and filler is not taken into consideration, and particles of the same particle size are used, so the filler particles are surrounded by solid glass particles. This creates large voids between solid glass particles and filler particles that are difficult to cover.
このようなガラス／フィラ粒子の成形体を焼成すると、
焼成工程中にガラスを包囲しているガス雰囲気がガラス
ーフィラのマトリックス層中に気泡を生じる。すなわち
、このような気泡はガラスの固体粒子が軟化し、隣接す
る粒子と結合、または、合体しはじめる時に形成される
。さらに詳しく述べるならば、隣接する固体のガラス粒
子間、ならびに、ガラス粒子とフィラ粒子間が接合し始
めるとき閉鎖された空胴が形成される。換言すれば、二
つの隣接するガラス接子間、あるいは、フィラガラス粒
子間に頚状部が成長し、このような頚状部は他のガラス
粒子対、ならびに、フィラガラス粒子対の間にも成長し
続けて、最終的にすべての粒子間に成長する。その時点
でネットワーク全体にわたって閉じた空隙をもっている
。このようなネットワークの存在はガラスの強度を著し
く低下させる。When such a molded body of glass/filler particles is fired,
During the firing process, the gas atmosphere surrounding the glass creates bubbles in the matrix layer of the glass-filler. That is, such bubbles are formed when solid particles of glass soften and begin to bond or coalesce with adjacent particles. More specifically, closed cavities are formed when adjacent solid glass particles and between glass particles and filler particles begin to bond. In other words, necks grow between two adjacent glass glues or filler glass particles, and such necks grow between other pairs of glass particles as well as between pairs of filler glass particles. It continues to grow and eventually grows between all the particles. At that point we have a closed gap throughout the network. The presence of such networks significantly reduces the strength of the glass.
さらに、ガラスとフィラの粒子径が比較的近いため、焼
結熱処理によって形成されたセラミックフィラとガラス
のマトリックスからなるガラスセラミック構造体におい
て（ガラスのマトリックス相にフィラが分散した形状と
なり、）フィラ粒子間が離なれてしまうため強度が十分
でないという問題も生じる。Furthermore, since the particle sizes of glass and filler are relatively similar, in a glass-ceramic structure consisting of ceramic filler and glass matrix formed by sintering heat treatment, the filler particles become dispersed in the glass matrix phase. There is also the problem that the strength is not sufficient because the spaces are far apart.
本発明の主な目的は、本質的に非多孔質であり、かつ、
フィラの稠密なネットワークからなり、ガラスがそのよ
うなネットワークのすき間をうめるような微細構造をも
つガラスセラミック部材を製造するのに適したガラスセ
ラミックの製造方法を与えることである。この独特の特
細構造はこれらのガラスセラミックに、従来から用いて
きたガラス、フィラの粒子径を用いて焼結したガラス、
フィラ構造体以上に高い破壊強度を与える。The main objects of the present invention are essentially non-porous and
It is an object of the present invention to provide a method for producing a glass-ceramic material suitable for producing a glass-ceramic member having a microstructure consisting of a dense network of fillers, in which glass fills the gaps in such a network. This unique special structure is created by combining conventionally used glass, glass sintered using the particle size of filler,
Provides higher breaking strength than filler structures.
本発明の他の目的は、金、銀又は銅の厚膜回路と適合性
をもち、かつ、これらと−緒に焼成可能な厚膜回路と適
合する多層ガラスセラミック基板の製造方法を与えるこ
とである。Another object of the invention is to provide a method for manufacturing a multilayer glass-ceramic substrate that is compatible with, and can be fired with, gold, silver or copper thick film circuits. be.
本発明の他の目的は金、銀または銅の導体パターンをも
つガラス−セラミックの多層基板の製造方法を与えるこ
とにある。Another object of the invention is to provide a method for manufacturing a glass-ceramic multilayer substrate with gold, silver or copper conductor patterns.
本発明の他の目的は多層基板への応用で用いられた従来
の材料よりも低い誘電率をもつ材料の製造方法を与える
ことである
〔課題を解決するための手段〕
上記目的を達成するために、本発明はフィラの粒子径を
１〜５μｍとし、フィラ粒子径に対して固体のガラス粒
子の粒子径を三分の一以下にしたものである。Another object of the present invention is to provide a method of manufacturing a material having a lower dielectric constant than conventional materials used in multilayer substrate applications. In addition, in the present invention, the particle size of the filler is 1 to 5 μm, and the particle size of the solid glass particles is one-third or less of the filler particle size.
ガラス・フィラ複合系セラミックの破壊強度はガラス、
フィラの体積分率に依存しており、フィラの粒子径が細
かく、フィラの体積分率が大きい程強度が高いことが知
られている。さらに述べるならば、焼結工程を径たあと
ガラス・フィラ複合系の微細製造が細かいフィラ粒子の
稠密なネットワークの隙き間を溶融したガラス粒子が占
め、かつ、フィラ粒子間に空隙がないことが望ましい。The fracture strength of glass-filler composite ceramic is that of glass,
It is known that the strength depends on the volume fraction of the filler, and the smaller the particle size of the filler and the larger the volume fraction of the filler, the higher the strength. Furthermore, after the sintering process, the microfabrication of the glass-filler composite system ensures that the molten glass particles occupy the gaps in the dense network of fine filler particles, and there are no voids between the filler particles. is desirable.
従来のガラスフッ４ラ分散系では熱処理前の成形体の粒
状のガラスとフィラの粒子径がほぼ同じため、焼結工程
でフィラ間に空隙がなくフィラ粒子間が溶融したガラス
で埋められたフィラのネットワークを形成するためには
熱処理前の成形体でフィラの周囲をガラスの粒子で覆う
必要があり、フィラに対するガラスの割合を増やさなけ
ればならない。しかし、このようなフィラガラス分散系
を熱処理焼結すると、その微細構造はガラスのマトリッ
クス相中にフィラ粒子が分散する形状となり、十分な破
壊強度を得ることができない。In conventional glass fluor 4-layer dispersion systems, the particle diameters of the granular glass in the molded body and the filler before heat treatment are almost the same, so there is no void between the fillers during the sintering process, and the filler particles are filled with molten glass. In order to form a network, it is necessary to cover the filler with glass particles in the molded body before heat treatment, and the ratio of glass to the filler must be increased. However, when such a filler glass dispersion system is heat-treated and sintered, its microstructure becomes such that filler particles are dispersed in a glass matrix phase, making it impossible to obtain sufficient fracture strength.
ガラスマトリックス相を減らすことによってフィラ粒子
を相互に接近させてフィラの稠密なネットワークを形成
することが考えられる。この場合、フィラに対するガラ
ス粒子の減らすため焼結工程でフィラ粒子の隙き間を溶
融したガラスが埋めることができず、ガラスフィラ構造
体中に空隙のネットワークが形成される。このような空
隙のネットワークのガラスフィラ構造体の破壊強度を著
しく低下させる。It is conceivable that reducing the glass matrix phase brings the filler particles closer together to form a dense network of fillers. In this case, in order to reduce the amount of glass particles relative to the filler, the molten glass cannot fill the gaps between the filler particles during the sintering process, and a network of voids is formed in the glass filler structure. Such a network of voids significantly reduces the fracture strength of the glass filler structure.
ガラスフィラ複合系において、十分な破壊強度を得るた
めには最密充填したフィラのネットワークの隙き間を溶
融したガラスがうめ、しかも、ネットワークの隙き間に
空隙が残らないことが必要である。In order to obtain sufficient breaking strength in a glass filler composite system, it is necessary that the molten glass fills the gaps in the closest-packed filler network, and that no voids remain between the gaps in the network. .
本発明によれば、ガラスの粒子径がフィラの粒子径の１
７３以下に抑えられているため、フィラに対するガラス
粒子の体積分率が少なくてもフィラの周囲をガラス粒子
で覆うことができる。従って、焼成工程で比較的稠密な
フィラのネットワークが形成され、かつ、フィラのネッ
トワークの隙間を溶融したガラスが埋めるため、ネット
ワークの隙き間に空隙が生じず、高い破壊強度が得られ
る。According to the present invention, the particle size of the glass is 1 of the particle size of the filler.
Since it is suppressed to 73 or less, even if the volume fraction of glass particles to the filler is small, the periphery of the filler can be covered with glass particles. Therefore, a relatively dense network of fillers is formed in the firing process, and the gaps in the filler network are filled with molten glass, so that no voids are formed between the gaps in the network, resulting in high breaking strength.
以下、本発明の一実施例をより具体的に説明する。表１
に示す平均粒径のアルミナ粉末とホウケイ酸ガラス粉末
を体積比で５０ ： ５０の割合で配合し、アルミナ製
ポットミルで１０時時間式混合し、アルミナのガラスの
混合粉を得た。Hereinafter, one embodiment of the present invention will be described in more detail. Table 1
Alumina powder and borosilicate glass powder having an average particle size shown in the figure were mixed in a volume ratio of 50:50 and mixed in an alumina pot mill for 10 hours to obtain a mixed powder of alumina and glass.
表 １
以下余白
以下余白
以下余白
次に、成形可能なスリップ、あるいは、スラリを得るた
め適当な有機バインダ（例えば、ポリビニルブチラル樹
脂）および溶剤と混合させる。このスラリから通常のド
クタブレード技術を用いて薄い生シートを成型した。所
望の数のこれらグリーンシートを適当な温度、および、
圧力（例えば、１２０℃で１００Ｋ ｇ ／ｃ＋ｕ”
）で積層加圧機中で蓄積圧着することにより所望の部材
を得た。この部材をプログラム炉成炉を用いて空気中で
焼成した。加速速度はバインダの完全な燃焼を実現する
ため１００℃／ｈ以下とした焼結したガラスセラミック
の破壊強度は棒状試料につき３点曲げ法で測定した。Table 1 Below Margin Below Margin Below Margin Next, it is mixed with a suitable organic binder (eg, polyvinyl butyral resin) and a solvent to obtain a moldable slip or slurry. Thin green sheets were formed from this slurry using conventional doctor blade techniques. A desired number of these green sheets are heated to an appropriate temperature, and
Pressure (e.g. 100K g/c+u” at 120℃
) to obtain the desired member by accumulating pressure bonding in a lamination press machine. This member was fired in air using a programmed furnace. The acceleration rate was set to 100° C./h or less in order to achieve complete combustion of the binder. The fracture strength of the sintered glass ceramic was measured using a three-point bending method for a rod-shaped sample.
本発明のガラスセラミック基体における限定理由は以下
の通りである。The reasons for the limitations on the glass ceramic substrate of the present invention are as follows.
ガラス粒子の粒径をフィラの粒径の１／３以上にすると
フィラ粒子の周囲をガラス粒子を覆うことができなくな
り、焼成後の基体に空隙が残留し、破壊強度が低下する
。If the particle size of the glass particles is 1/3 or more of the particle size of the filler, it becomes impossible to cover the periphery of the filler particles with the glass particles, and voids remain in the substrate after firing, resulting in a decrease in breaking strength.
また、ガラス粒子の含有量が３０Ｖｏ１％より少ないと
焼結温度が高くなり、金、銀、または、銅等の導体材料
と一緒に結成することができない、一方、ガラス粒子の
含有量が８０Ｖｏ１％を越えると基体の微細構造がガラ
スマトリックス中にフィラが分散した構造となり、基体
の破壊強度が低下し、好ましくない。In addition, if the content of glass particles is less than 30Vo1%, the sintering temperature will be high and it will not be possible to form together with conductive materials such as gold, silver, or copper.On the other hand, if the content of glass particles is less than 80Vo1% If it exceeds this value, the fine structure of the substrate will become a structure in which fillers are dispersed in a glass matrix, and the fracture strength of the substrate will decrease, which is not preferable.
フィラの粒径が５μｍを越えると基体内に形成されるフ
ィラネットワークが密でなくなるため破壊強度が低下し
、好ましくない。If the particle size of the filler exceeds 5 μm, the filler network formed within the base will become less dense, resulting in a decrease in fracture strength, which is undesirable.
フィラの粒径が１μｍより小さいと生シートの成形が困
難となり、多層回路基板を製造することができない。If the particle size of the filler is smaller than 1 μm, it will be difficult to mold a green sheet, making it impossible to manufacture a multilayer circuit board.
本発明におけるガラス粒子は誘電率が低く、かつ、熱膨
張係数が小さい次の組成をもつものが好ましい。即ち、
重量％で
５１０２ ２０〜７０％
Ａ Ｑ ｚ○ａ ２〜２０％
ＢｚＯａ １５〜４０％
ＲＯ２〜５０％
Ｎ ａ ２０ ＋ ＫｚＯ１〜５％
Ｓ工０２が２０％より少ないと軟化温度が少くなり、多
層回路基板の焼成温度でガラスが比較的高い流動性をも
つため埋め込まれた導体パターンが過剰に移動し、また
、満足すべき歪みおよび寸法に関する厳しい公差を達成
することができない、７０％を越えると焼結温度が高く
なり過ぎ、金、銀または銅といった低抵抗の金属と一緒
に焼成することができず好ましくない。The glass particles used in the present invention preferably have a low dielectric constant and a low coefficient of thermal expansion and have the following composition. That is,
5102 in weight% 20-70% A Q z○a 2-20% BzOa 15-40% RO2-50% Na 20 + KzO 1-5% If S-02 is less than 20%, the softening temperature will be low and the multi-layer The relatively high fluidity of the glass at circuit board firing temperatures causes excessive movement of the embedded conductor patterns, and also makes it impossible to achieve satisfactory distortion and tight tolerances on dimensions, exceeding 70%. This is not preferable because the sintering temperature becomes too high, making it impossible to sinter together with low-resistance metals such as gold, silver, or copper.
Ａｒｔｓ○３が２％より少ないと基体の耐温性が劣り２
０％を越えるとガラスの軟化温度が高くなり、ガラス−
セラミックの生部材の焼結温度が高くなり過ぎ、いずれ
も、好ましくない。If Arts○3 is less than 2%, the temperature resistance of the substrate will be poor2
If it exceeds 0%, the softening temperature of the glass becomes high, and the glass
The sintering temperature of the ceramic raw material becomes too high, which is undesirable.
Ｂ２Ｏ３はより少ないと焼結温度が高くなり過ぎ４０％
を越えるとガラスの化学的安定性が低下して好ましくな
い。If B2O3 is less, the sintering temperature will be too high (40%)
Exceeding this is not preferable because the chemical stability of the glass decreases.
アルカリ土類酸化物、Ｍ ｇ Ｏ、Ｃａ Ｏ、Ｂ ａ
Ｏ。Alkaline earth oxide, M g O, Ca O, B a
O.
Ｓｒ○はガラス粒子製造時の溶解性を向上させるため、
及び、ガラスの熱膨張係数を調整するため添加するもの
で、それらの総量が２％より少ないと上記溶解性が充分
に向上せず、５０％を越えると熱膨張係数が大きくなり
すぎ、いずれも、好ましくない。Sr○ improves solubility during the production of glass particles,
and are added to adjust the thermal expansion coefficient of glass; if the total amount is less than 2%, the solubility will not be improved sufficiently, and if it exceeds 50%, the thermal expansion coefficient will become too large. , undesirable.
Ｎ ａ ｚ ｏおよびＫ ｚ Ｏもガラス粒子製造時の
溶解を向上させるために添加するもので、それらの総量
が１％以下では溶解が充分に向上せず、５％を越えると
熱膨張係数が大きくなり、いずれも好ましくはない。Nazo and KzO are also added to improve dissolution during the production of glass particles, and if their total amount is less than 1%, dissolution will not be improved sufficiently, and if it exceeds 5%, the coefficient of thermal expansion will decrease. Both are undesirable.
上述のガラスセラミックの製造方法は、−緒に焼結され
た金、銀または銅の導体パターンを含む多層ガラスセラ
ミック基板を製造するために用いることができる。基板
の製造工程は次のとおりである。The glass-ceramic manufacturing method described above can be used to manufacture multilayer glass-ceramic substrates containing gold, silver or copper conductor patterns sintered together. The manufacturing process of the substrate is as follows.
〈工程１〉平均粒径３μｍのアルミナ粒子の平均粒径１
μｍのホウケイ酸ガラス粒子を体積比で５０：５０の割
合で配合し、アルミナ、ガラスの混合粉を得た。次に、
適当な有機バインダおよび溶剤とともに混合し、成型可
能なスラリまたはスリップを得た。バインダには、例え
ば、フタル酸ジブチルまたは、フタル酸ジオクチル等の
可塑剤を含むポリビニルブチラール樹脂がある。溶剤は
トリクレンとブチラールの混合液を用いた。<Step 1> Average particle size 1 of alumina particles with an average particle size of 3 μm
Borosilicate glass particles of μm size were blended in a volume ratio of 50:50 to obtain a mixed powder of alumina and glass. next,
Mixing with appropriate organic binders and solvents yielded a moldable slurry or slip. Examples of the binder include polyvinyl butyral resin containing a plasticizer such as dibutyl phthalate or dioctyl phthalate. A mixture of trichlene and butyral was used as the solvent.
〈工程２〉
このようにして用意したスラリあるいはスリップをドク
ターブレード技術を用いて薄い生シートに成型した。<Step 2> The slurry or slip thus prepared was formed into a thin green sheet using a doctor blade technique.
く工程３〉
成型したシートは切断装置で必要な大きさに切り揃え、
ドリルを用いて必要な位置に貫痛孔をあけた。Step 3〉 The formed sheet is cut to the required size using a cutting device,
A perforation hole was made at the required position using a drill.
く工程４〉
ついで、スクリーン印刷法により個々のシートの貫通孔
中に金、銀または銅の導体ペーストを充填した。Step 4> Next, gold, silver, or copper conductor paste was filled into the through holes of each sheet by screen printing.
〈工程５〉
工程４の個々のグリーンシート上に必要な導体パターン
をスクリーン印刷した。<Step 5> A necessary conductor pattern was screen printed on each green sheet in Step 4.
く工程６〉
工程５で準備した複数のグリーンシートを積層プレス中
で積層圧着した。Step 6> The plurality of green sheets prepared in Step 5 were laminated and pressure-bonded in a lamination press.
〈工程７〉
セラミックを焼結温度まで加熱し、バインダを除去し、
ガラス粒子を溶融させて、フィラーの粒子間をガラスで
埋め、導体パターン中の金属粒子を焼結させて金属配線
および貫通孔を形成した。<Step 7> Heat the ceramic to sintering temperature, remove the binder,
The glass particles were melted to fill the spaces between the filler particles with glass, and the metal particles in the conductor pattern were sintered to form metal wiring and through holes.
本発明によれば、ガラスにフィラを分散したガラスセラ
ミックを密接したフィラ粒子空隙をガラスがうめた微細
構造に形成できるため、ガラスセラミックの強度を従来
方法により形成したものより二倍以上高くすることがで
きる。According to the present invention, a glass ceramic in which filler is dispersed in glass can be formed into a fine structure in which glass fills voids of closely spaced filler particles, so that the strength of the glass ceramic can be more than twice as high as that formed by conventional methods. I can do it.
また、本発明を用いて製造した多層回路基板の破壊強度
が高いためＬＳＩ、ＩＣを高密度に実装でき、また、装
置に組込まれても破壊する恐れがない。Further, since the multilayer circuit board manufactured using the present invention has high breaking strength, LSIs and ICs can be mounted at high density, and there is no risk of breaking even if it is incorporated into a device.
しかも、１０００℃以下の低温で焼結できるため、金、
銀または銅等の低抵抗の導体材料を配線に使用すること
ができる。Moreover, since it can be sintered at a low temperature of 1000℃ or less, gold,
Low resistance conductive materials such as silver or copper can be used for the wiring.
Claims (1)
ックフィラの粒径を１〜５μｍ、また、前記ガラスの粒
径を前記セラミックフィラの粒径の三分の一以下に、粉
砕し、成形した後、焼結したことを特徴とするガラス−
セラミック基体。 ２、請求項１において、前記ガラス−セラミック基体と
して、体積百分率で ガラス３０〜８０％ フィラ２０〜７０％ で構成されるガラス−セラミック基体。 ３、請求項１において、前記セラミックフィラはアルミ
ナ、α−石英、コージェライト、β−スポシューメン、
ジルコニアから選ばれた少なくとも一つであるガラス−
セラミック基体。 ４、請求項１において、前記ガラスは重量が本質的に Ｓ＿１Ｏ＿２２０〜７０％ Ａｌ＿２Ｏ＿３１〜２０％ Ｂ＿２Ｏ＿３１５〜４０％ ＲＯ２〜５０％Ｒ；アルカリ工類金属 Ｎａ＿２Ｏ＋Ｋ＿２Ｏ１〜５％ で構成されるガラス−セラミック基体。[Claims] 1. Comprised of glass and ceramic filler, the particle size of the ceramic filler is 1 to 5 μm, and the particle size of the glass is pulverized to one-third or less of the particle size of the ceramic filler. A glass characterized by being formed, formed, and sintered.
Ceramic substrate. 2. The glass-ceramic substrate according to claim 1, wherein the glass-ceramic substrate is composed of 30-80% glass and 20-70% filler in volume percentage. 3. In claim 1, the ceramic filler is alumina, α-quartz, cordierite, β-spodumene,
Glass that is at least one selected from zirconia.
Ceramic substrate. 4. A glass-ceramic substrate according to claim 1, wherein the glass consists essentially by weight of: S_1O_220-70% Al_2O_31-20% B_2O_315-40% RO2-50%R; alkaline metals Na_2O+K_2O 1-5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15751890A JPH0450141A (en) | 1990-06-18 | 1990-06-18 | Glass-ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15751890A JPH0450141A (en) | 1990-06-18 | 1990-06-18 | Glass-ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0450141A true JPH0450141A (en) | 1992-02-19 |
Family
ID=15651428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15751890A Pending JPH0450141A (en) | 1990-06-18 | 1990-06-18 | Glass-ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0450141A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0621245A1 (en) * | 1993-04-22 | 1994-10-26 | Nec Corporation | Multilayer glass ceramic substrate and method of fabricating the same |
| JP2011138625A (en) * | 2009-12-25 | 2011-07-14 | Samsung Sdi Co Ltd | Electrode substrate and photoelectric conversion element |
| JP2012229160A (en) * | 2008-04-18 | 2012-11-22 | Asahi Glass Co Ltd | Glass ceramic composition for substrate mounting light-emitting element, substrate mounting light-emitting element using the same, and light-emitting device |
-
1990
- 1990-06-18 JP JP15751890A patent/JPH0450141A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0621245A1 (en) * | 1993-04-22 | 1994-10-26 | Nec Corporation | Multilayer glass ceramic substrate and method of fabricating the same |
| JP2012229160A (en) * | 2008-04-18 | 2012-11-22 | Asahi Glass Co Ltd | Glass ceramic composition for substrate mounting light-emitting element, substrate mounting light-emitting element using the same, and light-emitting device |
| JP2011138625A (en) * | 2009-12-25 | 2011-07-14 | Samsung Sdi Co Ltd | Electrode substrate and photoelectric conversion element |
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