JPH0448722B2 - - Google Patents

Info

Publication number: JPH0448722B2
Authority: JP; Japan
Prior art keywords: boron nitride; nitride; titanium; chemical vapor; boron
Prior art date: 1983-11-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP58211036A

Other languages

English (en)

Japanese (ja)

Other versions

JPS60108306A (ja

Inventor

Hiroyuki Nakae

Toshiaki Matsuda

Naoki Uno

Yukio Matsunami

Toshio Hirai

Takeshi Masumoto

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Furukawa Electric Co Ltd

Original Assignee

Furukawa Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-11-11

Filing date

1983-11-11

Publication date

1992-08-07

1983-11-11 Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd

1983-11-11 Priority to JP58211036A priority Critical patent/JPS60108306A/ja

1984-11-08 Priority to EP84113503A priority patent/EP0149044B1/fr

1984-11-08 Priority to DE8484113503T priority patent/DE3463641D1/de

1984-11-09 Priority to US06/670,154 priority patent/US4565747A/en

1985-06-13 Publication of JPS60108306A publication Critical patent/JPS60108306A/ja

1992-08-07 Publication of JPH0448722B2 publication Critical patent/JPH0448722B2/ja

Status Granted legal-status Critical Current

Links

229910052582 BN Inorganic materials 0.000 claims description 102
PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 101
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 57
239000007789 gas Substances 0.000 claims description 45
238000000151 deposition Methods 0.000 claims description 41
230000008021 deposition Effects 0.000 claims description 39
239000010936 titanium Substances 0.000 claims description 34
229910052719 titanium Inorganic materials 0.000 claims description 29
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 28
238000004519 manufacturing process Methods 0.000 claims description 26
238000001556 precipitation Methods 0.000 claims description 19
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
238000000034 method Methods 0.000 claims description 13
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
229910052796 boron Inorganic materials 0.000 claims description 12
229910052757 nitrogen Inorganic materials 0.000 claims description 8
239000012808 vapor phase Substances 0.000 claims description 8
238000002156 mixing Methods 0.000 claims description 6
239000000126 substance Substances 0.000 description 31
239000000758 substrate Substances 0.000 description 17
239000011229 interlayer Substances 0.000 description 10
239000011159 matrix material Substances 0.000 description 9
CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 8
239000000463 material Substances 0.000 description 8
239000000047 product Substances 0.000 description 8
-1 BCl 3 and BF 3 Chemical class 0.000 description 6
238000005229 chemical vapour deposition Methods 0.000 description 6
238000002425 crystallisation Methods 0.000 description 5
230000008025 crystallization Effects 0.000 description 5
239000002244 precipitate Substances 0.000 description 5
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
230000000694 effects Effects 0.000 description 4
239000000395 magnesium oxide Substances 0.000 description 4
LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
BGECDVWSWDRFSP-UHFFFAOYSA-N borazine Chemical compound B1NBNBN1 BGECDVWSWDRFSP-UHFFFAOYSA-N 0.000 description 3
230000000052 comparative effect Effects 0.000 description 3
238000001816 cooling Methods 0.000 description 3
239000012774 insulation material Substances 0.000 description 3
239000010410 layer Substances 0.000 description 3
239000000203 mixture Substances 0.000 description 3
239000002994 raw material Substances 0.000 description 3
QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
229910033181 TiB2 Inorganic materials 0.000 description 2
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
239000011449 brick Substances 0.000 description 2
238000006243 chemical reaction Methods 0.000 description 2
239000004927 clay Substances 0.000 description 2
239000002131 composite material Substances 0.000 description 2
230000007797 corrosion Effects 0.000 description 2
238000005260 corrosion Methods 0.000 description 2
238000009413 insulation Methods 0.000 description 2
229910052751 metal Inorganic materials 0.000 description 2
239000002184 metal Substances 0.000 description 2
229910000069 nitrogen hydride Inorganic materials 0.000 description 2
239000000843 powder Substances 0.000 description 2
238000005245 sintering Methods 0.000 description 2
239000007787 solid Substances 0.000 description 2
229910002076 stabilized zirconia Inorganic materials 0.000 description 2
239000010409 thin film Substances 0.000 description 2
FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 1
229910017855 NH 4 F Inorganic materials 0.000 description 1
229910003074 TiCl4 Inorganic materials 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
239000004327 boric acid Substances 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
239000012159 carrier gas Substances 0.000 description 1
229910010293 ceramic material Inorganic materials 0.000 description 1
239000004020 conductor Substances 0.000 description 1
239000000470 constituent Substances 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
238000000280 densification Methods 0.000 description 1
238000010790 dilution Methods 0.000 description 1
239000012895 dilution Substances 0.000 description 1
238000010292 electrical insulation Methods 0.000 description 1
238000010894 electron beam technology Methods 0.000 description 1
238000000921 elemental analysis Methods 0.000 description 1
239000010419 fine particle Substances 0.000 description 1
229910002804 graphite Inorganic materials 0.000 description 1
239000010439 graphite Substances 0.000 description 1
150000004820 halides Chemical class 0.000 description 1
150000004678 hydrides Chemical class 0.000 description 1
230000007062 hydrolysis Effects 0.000 description 1
238000006460 hydrolysis reaction Methods 0.000 description 1
239000011810 insulating material Substances 0.000 description 1
QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
239000002245 particle Substances 0.000 description 1
239000012071 phase Substances 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
238000001272 pressureless sintering Methods 0.000 description 1
230000035939 shock Effects 0.000 description 1
238000012916 structural analysis Methods 0.000 description 1
XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
238000001947 vapour-phase growth Methods 0.000 description 1

Landscapes

Ceramic Products (AREA)
Chemical Vapour Deposition (AREA)

JP58211036A 1983-11-11 1983-11-11 窒化チタンを含む窒化ホウ素とその製造方法 Granted JPS60108306A (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP58211036A JPS60108306A (ja)	1983-11-11	1983-11-11	窒化チタンを含む窒化ホウ素とその製造方法
EP84113503A EP0149044B1 (fr)	1983-11-11	1984-11-08	Nitrure de bore contenant du nitrure de titane, procédé de fabrication et leur produits composites céramiques
DE8484113503T DE3463641D1 (en)	1983-11-11	1984-11-08	Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom
US06/670,154 US4565747A (en)	1983-11-11	1984-11-09	Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP58211036A JPS60108306A (ja)	1983-11-11	1983-11-11	窒化チタンを含む窒化ホウ素とその製造方法

Publications (2)

Publication Number	Publication Date
JPS60108306A JPS60108306A (ja)	1985-06-13
JPH0448722B2 true JPH0448722B2 (fr)	1992-08-07

Family

ID=16599301

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP58211036A Granted JPS60108306A (ja)	1983-11-11	1983-11-11	窒化チタンを含む窒化ホウ素とその製造方法

Country Status (1)

Country	Link
JP (1)	JPS60108306A (fr)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0310562A (ja) *	1989-06-08	1991-01-18	Fuji Xerox Co Ltd	信号補正装置

1983
- 1983-11-11 JP JP58211036A patent/JPS60108306A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0310562A (ja) *	1989-06-08	1991-01-18	Fuji Xerox Co Ltd	信号補正装置

Also Published As

Publication number	Publication date
JPS60108306A (ja)	1985-06-13

Publication	Publication Date	Title
EP0149044B1 (fr)	1987-05-13	Nitrure de bore contenant du nitrure de titane, procédé de fabrication et leur produits composites céramiques
Matsuda et al.	1986	Synthesis and structure of chemically vapour-deposited boron nitride
JPH0217481B2 (fr)	1990-04-20
EP0216932B1 (fr)	1992-05-13	Nitrure de bore rhomboedrique polycristallin et son procede de production
Bradshaw et al.	1999	Combustion synthesis of aluminum nitride particles and whiskers
JPS6112844B2 (fr)	1986-04-10
US4346068A (en)	1982-08-24	Process for preparing high-purity α-type silicon nitride
US5004708A (en)	1991-04-02	Pyrolytic boron nitride with columnar crystalline morphology
US4572844A (en)	1986-02-25	Method for preparing coated powder
JPS6283306A (ja)	1987-04-16	透明なｂｎ系セラミックス材料
JPH0448722B2 (fr)	1992-08-07
JP3854303B2 (ja)	2006-12-06	結晶性乱層構造窒化硼素粉末の製造方法
Kumta et al.	1991	Chemical processing of rare earth chalcogenides
JPH0359002B2 (fr)	1991-09-09
US5023215A (en)	1991-06-11	Cordierite-silicon nitride body
JPH0310562B2 (fr)	1991-02-14
JPH0463012B2 (fr)	1992-10-08
JPH03247506A (ja)	1991-11-05	多結晶炭化珪素
JPH0357075B2 (fr)	1991-08-30
JPS58145665A (ja)	1983-08-30	透光性Ｓｉ―Ｎ―Ｂ系非晶質材料およびその製造方法
JPH0357074B2 (fr)	1991-08-30
JPH0214312B2 (fr)	1990-04-06
JPH0357043B2 (fr)	1991-08-30
JPH07187620A (ja)	1995-07-25	高純度窒化アルミニウム粉末の製造方法
Zahneisen et al.	1992	Electrochemically Prepared Polymeric Precursors for the Formation of Non-Oxide Ceramics and Coatings