JPH0438841A - Bonding wire for semiconductor element - Google Patents

Bonding wire for semiconductor element

Info

Publication number
JPH0438841A
JPH0438841A JP2146499A JP14649990A JPH0438841A JP H0438841 A JPH0438841 A JP H0438841A JP 2146499 A JP2146499 A JP 2146499A JP 14649990 A JP14649990 A JP 14649990A JP H0438841 A JPH0438841 A JP H0438841A
Authority
JP
Japan
Prior art keywords
boiling point
ball
low boiling
solid solution
base material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2146499A
Other languages
Japanese (ja)
Inventor
Katsuyuki Toyofuku
豊福　克之
Ichiro Nagamatsu
永松　一郎
Shinji Shirakawa
白川　信次
Sukehito Iga
祐人 伊賀
Takeshi Kujiraoka
鯨岡　毅
Norimasa Murakami
村上　憲正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP2146499A priority Critical patent/JPH0438841A/en
Priority to US07/708,204 priority patent/US5298219A/en
Priority to MYPI91000971A priority patent/MY113367A/en
Priority to GB9111994A priority patent/GB2245902B/en
Publication of JPH0438841A publication Critical patent/JPH0438841A/en
Priority to GB9401294A priority patent/GB2273716B/en
Priority to US08/453,999 priority patent/US5538685A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enable strength at a neck part to be equal or more than that of a bus by allowing a low boiling point element I which has a lower melt point than a base material of highly pure Pd or Pd alloy and is subjected to solid solution with Pd to be contained in the base materials by a specific amount. CONSTITUTION:A low boiling-point element I which has a lower boiling point than melt point of a base material of highly pure Pd or Pd alloy and is subjected to solid solution with Pd is contained in the base material by 25-10000ppm. A low boiling point element with a lower boiling point than the melt point of the base material is evaporated and scattered from a melted ball when the ball is formed but cannot be evaporated from a neck part, thus generating stress for vaporization. The low boiling point element I which is subjected to solid solution with Pd cannot easily escape from the Pd, cannot satisfy characteristics if the content is less than 25ppm, wire drawing machining becomes difficult since embrittlement phenomenon of bus starts to be seen at 10000ppm or more and remaining amount within the ball without being scattered when forming the ball becomes large and the ball becomes excessively hard, thus leading to chip crack when performing bonding and enabling 25-10000ppm to be needed.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は半導体素子のチップ電極と外部リードとを接続
するために用いられる半導体素子用ボンディング線、特
にボールボンディング法に好適なものに関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a bonding wire for a semiconductor device used for connecting a chip electrode of a semiconductor device and an external lead, and particularly to a bonding wire suitable for the ball bonding method.

〈従来の技術〉 従来、この種の半導体素子用ボンディング線として例え
ばキャピラリーの先端から垂下したＡｕ線の先端を電気
トーチにより溶融させてボールを形成し、このボールを
半導体素子のチップ電極に圧着して接着せしめ、その後
ループ状に外部リードまで導いて該外部リードに圧着・
切断することにより、チップ電極と外部リードを接続さ
せたものがある。<Prior art> Conventionally, this type of bonding wire for semiconductor devices has been used, for example, by melting the tip of an Au wire hanging from the tip of a capillary with an electric torch to form a ball, and then press-bonding this ball to the chip electrode of a semiconductor device. Then, lead it in a loop shape to the external lead and crimp/bond it to the external lead.
Some devices have chip electrodes and external leads connected by cutting.

〈発明が解決しようとする課題〉 しかし乍ら、このような従来の半導体素子用ボンディン
グ線ではボール形成時にこのボール直上のネック部が熱
影響を受けて線材中に蓄積された応力が緩和されるため
熱影響を受けない母線に比べ機械的強さが低下し、その
結果ボンディング作業中にネック部が破断したりワイヤ
倒れやワイヤ垂れが発生すると共に、製品の温度サイク
ル寿命試験において繰り返し温度変化により熱膨張・収
縮して発生する応力がネック部に集中し、ネック部の破
断が発生し易いという問題がある。<Problems to be Solved by the Invention> However, in such conventional bonding wires for semiconductor devices, when the ball is formed, the neck directly above the ball is affected by heat, and the stress accumulated in the wire is alleviated. As a result, the mechanical strength is lower than that of a bus bar that is not affected by heat, resulting in neck breakage, wire collapse, and wire sag during bonding operations, as well as repeated temperature changes during product temperature cycle life tests. There is a problem in that the stress generated by thermal expansion and contraction concentrates on the neck portion, making it easy for the neck portion to break.

一方、近年ＬＳＩの高密度実装化に伴って多ピン化傾向
が強まる中、ボンディング線を細線化してボンディング
ピッチを短縮することが要求されている。On the other hand, in recent years, as LSIs have become more densely packaged and the number of pins has increased, there has been a demand for thinner bonding lines to shorten the bonding pitch.

しかし、前述のボンディング線ではネック部が破断し易
いためにその線径を細くすることができず、上記要求を
満足し得ないという問題もある。However, the above-mentioned bonding wire has the problem that the neck portion is easily broken, so that the diameter of the wire cannot be made thinner, and the above-mentioned requirements cannot be satisfied.

本発明は係る従来事情に鑑み、ネック部の強さを母線と
同等以上にすることを目的とする。In view of the conventional circumstances, the present invention aims to make the strength of the neck portion equal to or higher than that of the generatrix.

く課題を解決するための手段〉 上記課題を解決するために本発明が講する技術的手段は
、高純度Ｐｄ又はＰｄ合金に、これら母材の融点より低
い沸点を有してＰｄと固溶する低沸点元素Ｉを２５〜１
１００００ａｔｐｐ含有させたことを特徴とするもので
ある。Means for Solving the Problems> The technical means taken by the present invention to solve the above problems is to form a solid solution with Pd in high-purity Pd or a Pd alloy having a boiling point lower than the melting point of these base materials. The low boiling point element I is 25 to 1
It is characterized by containing 10,000 atpp.

また、高純度Ｐｄ又はＰｄ合金に、これら母材の融点よ
り低い沸点を有してＰｄと固溶しない低沸点元素ＩＩを
５〜５００ａｔｐｐｍ含有させても良い。Further, high purity Pd or Pd alloy may contain 5 to 500 atppm of a low boiling point element II which has a boiling point lower than the melting point of these base materials and does not dissolve in solid form with Pd.

更に、高純度Ｐｄ又はＰｄ合金に、これら母材の融点よ
り低い沸点を有してＰｄと固溶する低沸点元素Ｉ及びＰ
ｄと固溶しない低沸点元素ＩＩを低沸点　　低沸点　　
　　低沸点　　低沸点元素Ｉの　元素■の　　　元素■
の　元素■のの条件において合計５〜１００００ａ　！
ｐｐｍ含有させても良い。Furthermore, high-purity Pd or Pd alloy contains low-boiling-point elements I and P that have a boiling point lower than the melting point of these base materials and form a solid solution with Pd.
Low boiling point element II that does not dissolve in solid solution with d.
Low boiling point Low boiling point element I element■ element■
A total of 5 to 10,000 a under the conditions of element ■!
It may be contained in ppm.

そして、高純度Ｐｄとは不可避不純物を含む９９９％以
上のものを母材として用いる。High purity Pd is 999% or more containing unavoidable impurities and is used as a base material.

Ｐｄ合金とは高純度Ｐｄに＾ｕ　（１０ａ＋％以下）、
人ｇ（５ｎ１％以下）　、Ｐｔ　（２０ａ＋％以下）　
、Ｒｈ　（８ａｔ％以下）　、Ｒｕ、　Ｏ５，Ｉ「（ｌ
ａｔ％以下）　、Ｃｏ、　ＭＯ，Ｆｃ。Pd alloy is high purity Pd (10a+% or less),
Persong (5n1% or less), Pt (20a+% or less)
, Rh (8 at% or less), Ru, O5, I (l
at% or less), Co, MO, Fc.

Ｔｉ　（ｌａｔｐｐｍ　〜５ｘｔ％）等の中から選ばれ
る一種又は二種以上含有させたものを用い、Ｐｄ合金と
することにより母材自身の常温及び高温で機械的強さを
向上させて高速ボンディングを可能にすると共に、ポー
ル形成時におけるネック部の結晶粒粗大化を防止してい
る。By using a Pd alloy containing one or more selected from Ti (latppm ~ 5xt%) etc., the mechanical strength of the base material itself at room temperature and high temperature is improved and high-speed bonding is possible. At the same time, coarsening of crystal grains in the neck portion during pole formation is prevented.

母材の融点より低い沸点を有してＰｄと固溶する低沸点
元素Ｉとは例えば２ｎ、　Ｃｄ、　Ｈｇ、　Ｌｉ、　Ｂ
ｅ、　Ｍｇ。The low boiling point elements I that have a boiling point lower than the melting point of the base material and form a solid solution with Pd are, for example, 2n, Cd, Hg, Li, B
e, Mg.

Ｓｂ、　Ｔｅ、　Ｂｉ、　Ｙｂ等であり、母材の融点よ
り低い沸点を有してＰｄと固溶しない低沸点元素■とは
例えばＰ、　　Ｓ、＾５　　Ｔ１等である。The low boiling point element (2), which is Sb, Te, Bi, Yb, etc. and has a boiling point lower than the melting point of the base material and does not form a solid solution with Pd, is, for example, P, S, ^5 T1, etc.

〈作用〉 上記の半導体素子のボンディング用金線における各成分
の限定理由について述べる。<Function> The reason for limiting each component in the gold wire for bonding the semiconductor element described above will be described.

母材の融点より低い沸点を有する低沸点元素はポール形
成時に熔融したボール中から蒸発飛散するものの、ネッ
ク部中からは蒸発できないが気化しようとして応力を発
生する作用があるが、そのうちＰｄと固溶する低沸点元
素ＩはＰｄから抜は難くその含有量が２５ｘｔｐｐｍ未
満では特性を満足することができず、一方１０００Ｇａ
　＋ｐｐｍ以上では母線の脆化現象が見られるようにな
るため伸線加工が難しくなると共に、ボール形成時にお
いてボール中に飛散せずに残留する量が多くなりボール
が硬くなり過ぎてボンディングの際にチップ割れの原因
となるので２５〜１１００００ａ）ｐｐとする必要があ
る。Low boiling point elements with a boiling point lower than the melting point of the base material evaporate and scatter from the molten ball during pole formation, but they cannot evaporate from the neck, but they try to vaporize and generate stress, but eventually Pd and solid The soluble low boiling point element I is difficult to remove from Pd, and if its content is less than 25xtppm, the characteristics cannot be satisfied.
If the concentration exceeds +ppm, embrittlement of the generatrix will occur, making wire drawing difficult, and at the same time, a large amount will remain in the ball without scattering during ball formation, making the ball too hard and making it difficult to bond. Since it causes chip cracking, it is necessary to set it to 25 to 110,000 a) pp.

また、Ｐｄと固溶しない低沸点元素■はＰｄから抜は易
くその含有量が５　ａｌｐｐｍ未満では特性を満足する
ことができず、一方５［１［１ａｔｐｐｍ以上では母線
の脆化現象が見られるようになるため伸線加工が難しく
なると共に、ボール中に飛散せずに残留する量が多くな
りボールが硬くなり過ぎてチップ割れの原因となるので
５〜５００＋：ｐｐｍとする必要がある。In addition, the low boiling point element (■), which does not form a solid solution with Pd, is easily extracted from Pd, and if its content is less than 5 alppm, the properties cannot be satisfied.On the other hand, if the content is less than 5 alppm, embrittlement of the generatrix is observed. This makes wire drawing difficult, and a large amount remains in the ball instead of scattering, making the ball too hard and causing chip cracking.

Ｐｄと固溶する低沸点元素Ｉ及びＰｄと固溶しない低沸
点元素■の合計の含有量の下限は、低沸点元素　低沸点
元素 ■の含有量ヤ■の含有量、１ ２５　　　　５　　　　　の条件において５ａｔｐｐｍ
未満では特性を満足することができないので上記条件に
おいて５ａｌｐｐｍとする必要がある。The lower limit of the total content of low boiling point element I that dissolves in solid solution with Pd and low boiling point element ■ that does not dissolve in solid solution with Pd is the low boiling point element content of low boiling point element ■ content of low boiling point element ■ content of 1 25 5 5atppm
If the content is less than 5 alppm, the properties cannot be satisfied, so it is necessary to set the content to 5 alppm under the above conditions.

一方、Ｐｄと固溶する低沸点元素■及びＰｄと固溶しな
い低沸点元素■の合計の含有量の上限は、低沸点元素　
低沸点元素 ■の含有量やＨの含有量、１ １００００　　　　５００　　　　　、、条件１：おい
工２ＱＯＨａｆｐｐｍ以上では母線の脆化現象が見られ
るようになるため伸線加工が難しくなると共に、ボール
中に飛散せずに残留する量が多くなりボールが硬くなり
過ぎてチップ割れの原因となるので上記条件において１
００００　ａｔｐｐｍとする必要がある。On the other hand, the upper limit of the total content of low boiling point elements ■ that dissolve solidly with Pd and low boiling point elements ■ that do not dissolve solidly with Pd is
The content of the low-boiling point element ■ and the content of H are 1 10000 500, Condition 1: If the content is higher than 2QOHafppm, embrittlement of the generatrix will be observed, making wire drawing difficult and causing scattering in the ball. Under the above conditions, 1.
It is necessary to set it to 0000 atppm.

そして高純度Ｐｄ又はＰｄ合金に、これら母材の融点よ
り低い沸点を有してＰｄと固溶する低沸点元素を２５〜
ｌ（ｌ［ｌＨａ　ｌｐｐｍ含有させるか、又はＰｄと固
溶しない低沸点元素を５〜５００ａｔｐｐｍ含有させる
か、或いはこれら低沸点元素Ｉと低沸点元素ＩＩを低沸
点　　低沸点　　　　低沸点　　低沸点元素Ｉの　元素
■の　　　元素■の　元素■の含有量　や含有量　よ□
２含有量　や含有量の条件において合計５〜１［１００
［］ａｌｐｐｍ含有させることにより、ボール形成時に
おいてボール中の低沸点元素が蒸発飛散し、これにより
金属特有のガス吸収を防いで接合に良好なボールが得ら
れると共に、ネック部中の低沸点元素は蒸発できないが
気化しようとして応力を発生し、これに伴いボンディン
グ後のネック部の破断強度が応力の発生しない母線に比
べて向上するものである。Then, high-purity Pd or Pd alloy is added with 25 to 50% of low-boiling-point elements that have a boiling point lower than the melting point of these base materials and form a solid solution with Pd.
l(l[lHa lppm, or contain 5 to 500 atppm of a low boiling point element that does not dissolve with Pd, or add these low boiling point elements I and II to low boiling point elements I. The content and content of the element■ of the element■ of the element■
2 content and content conditions, the total is 5 to 1 [100
By containing []alppm, low boiling point elements in the ball evaporate and scatter during ball formation, thereby preventing gas absorption peculiar to metals and obtaining a ball with good bonding properties. Although it cannot evaporate, it tries to evaporate and generates stress, and as a result, the breaking strength of the neck portion after bonding is improved compared to the generatrix where stress does not occur.

〈実施例〉 以下、具体的な実施例について説明する。<Example> Hereinafter, specific examples will be described.

各試料は９９．９５％の高純度Ｐｄと、この高純度Ｐｄ
に杓を１０２１％含有させたＰｄ合金と、高純度Ｐｄに
Ａｇを５ａｔｐｐｍ含有させたＰｄ合金と、高純度Ｐｄ
にＭｏを０．５ａｔ％含有させたＰｄ合金と、高純度Ｐ
ｄにＣｕを５１１％含有させたＰｄ合金を用意し、これ
ら高純度Ｐｄ及び夫々のＰｄ合金にＸｎ、　Ｃｄ、　Ｈ
ｇ、　　Ｐ、　　Ｓを添加して溶解鋳造し、次に溝ロー
ル加工を施し、その途中で焼なまし処理を施した後に線
引加工で線径３０μの母線に成形し、更に十分な応力除
去を行ったものである。Each sample is made of 99.95% high purity Pd and this high purity Pd
A Pd alloy containing 1021% Ag, a Pd alloy containing 5 atppm of Ag in high purity Pd, and a Pd alloy containing 5 atppm Ag in high purity Pd.
Pd alloy containing 0.5 at% Mo and high purity P
Prepare Pd alloys containing 511% Cu in d, and add Xn, Cd, H to these high purity Pd and each Pd alloy.
G, P, and S are added and melted and cast, then grooved and rolled, annealed during the process, and drawn to form a generatrix with a wire diameter of 30μ, which further removes sufficient stress. This is what was done.

各試料の元素含有率は表（１）に示す通りであり、その
試料？！１１〜５４は本発明の実施品、試料定５５、５
６は本発明の組成範囲にない比較品である。The element content of each sample is as shown in Table (1), and the sample? ! 11 to 54 are implementation products of the present invention, sample determination 55, 5
No. 6 is a comparative product that does not fall within the composition range of the present invention.

表（１） 上記試料によってプルテストを所定回数（ｎ４０）宛行
い、夫々のプル強度及びネック部以外の母線部分で破断
した回数と、加工性の良否と、チップ割れの有無を測定
した結果をＰｄ、各Ｐｄ合金毎に次表（２）に示す。Table (1) The above samples were subjected to a pull test a predetermined number of times (n40), and the results of measuring each pull strength, the number of breaks at the generatrix portion other than the neck, the quality of workability, and the presence or absence of chip cracking were reported for Pd. , are shown in the following table (2) for each Pd alloy.

この測定結果により本発明の組成範囲にあるものはプル
テストにおけるＣモード破断の数が範囲外のものに比べ
て明らかに多いことからネック部がそれ以外の母線部分
より強いことが判り、前述した範囲で最適であることが
理解される。From this measurement result, the number of C-mode fractures in the pull test in the composition range of the present invention is clearly higher than that in the composition range outside the range, and it is found that the neck part is stronger than the other generatrix parts. It is understood that this is optimal.

〈発明の効果〉 本発明は上記の構成であるから、以下の利点を有する。<Effect of the invention> Since the present invention has the above configuration, it has the following advantages.

■　高純度Ｐｄ又はＰｄ合金に、これら母材の融点より
低い沸点を有してＰｄと固溶する低沸点元素を２５〜ｌ
ｏ［ｌＨａｆｐｐｍ含有させるか、又はＰｄと固溶しな
い低沸点元素を５〜５００ａｔｐｐｍ含有させるか、或
いはこれら両低沸点元素Ｉ、　　ＩＩを 低沸点　　低沸点　　　　低沸点　　低沸点元素Ｉの　
元素■の　　　元素工の　元素■のさせることにより、
ボール形成時においてボール中の低沸点元素が蒸発飛散
し、これにより金属特有のガス吸収を防いで接合に良好
なボールが得られると共に、ネック部中の低沸点元素は
蒸発できないが気化しようとして応力を発生し、これに
伴いボンディング後のネック部の破断強度が応力の発生
しない母線に比べて向上するので、ネック部の強さを母
線と同等以上にすることができる。■ 25 to 10 liters of low boiling point elements that have a boiling point lower than the melting point of these base materials and dissolve in solid solution with Pd are added to high purity Pd or Pd alloy.
o[lHafppm, or 5 to 500 atppm of a low boiling point element that does not dissolve with Pd, or both low boiling point elements I and II.
By making the element■ of the element■ of the element■,
During ball formation, the low boiling point elements in the ball evaporate and scatter, thereby preventing gas absorption peculiar to metals and obtaining a ball with good bonding properties.Although the low boiling point elements in the neck cannot evaporate, they try to evaporate and create stress. As a result, the breaking strength of the neck portion after bonding is improved compared to the generatrix in which stress does not occur, so that the strength of the neck portion can be made equal to or higher than that of the generatrix.

従って、ボール形成時にネック部が熱影響を受けて母線
より弱くなる従来のものに比べ、ボンディング作業中の
ネック部の破断やワイヤ倒れ、ワイヤ垂れが発生しない
と共に、製品の温度サイクル寿命試験において繰り返し
温度変化により発生する応力が母線全体に分散して吸収
され、ボンディング線の破断の最頻発生部位であるネッ
ク部の破断は劇的に減少し、信頼性が向上する。Therefore, compared to conventional products where the neck part is affected by heat during ball formation and becomes weaker than the bus bar, the neck part does not break during the bonding process, wire falls down, or wire sag occurs, and the product is repeatedly tested during temperature cycle life tests. Stress caused by temperature changes is dispersed and absorbed over the entire generatrix, dramatically reducing the number of fractures at the neck, which is the most common site of bonding wire fracture, and improving reliability.

■　ネック部が破断し難くなるので、ボンディング線の
線径を微細化でき、これにもとないボンディングピッチ
の短縮化が可能となり、ＬＳＩの高密度実装が図れる。- Since the neck part becomes difficult to break, the wire diameter of the bonding wire can be made finer, which in turn makes it possible to shorten the bonding pitch, allowing for high-density mounting of LSIs.

Claims (3)

【特許請求の範囲】[Claims] （１）高純度Ｐｄ又はＰｄ合金に、これら母材の融点よ
り低い沸点を有してＰｄと固溶する低沸点元素 I を２
５〜１００００ａｔｐｐｍ含有させたことを特徴とする
半導体素子用ボンディング線。(1) Adding 2 low boiling point elements I, which have a boiling point lower than the melting point of these base materials and form a solid solution with Pd, to high purity Pd or Pd alloy.
A bonding wire for a semiconductor device, characterized in that the bonding wire contains 5 to 10,000 atppm. （２）高純度Ｐｄ又はＰｄ合金に、これら母材の融点よ
り低い沸点を有してＰｄと固溶しない低沸点元素IIを５
〜５００ａｔｐｐｍ含有させたことを特徴とする半導体
素子用ボンディング線。(2) High purity Pd or Pd alloy is added with 5 low boiling point elements II that have a boiling point lower than the melting point of these base materials and do not dissolve in solid solution with Pd.
A bonding wire for a semiconductor device, characterized in that it contains ~500 atppm. （３）高純度Ｐｄ又はＰｄ合金に、これら母材の融点よ
り低い沸点を有してＰｄと固溶する低沸点元素 I 及び
Ｐｄと固溶しない低沸点元素IIを （（低沸点元素 I の含有量／２５）＋（低沸点元素II
の含有量／５））≧１≧（（低沸点元素 I の含有量／
１００００）＋（低沸点元素IIの含有量／５００））と
を特徴とする半導体素子用ボンディング線。(3) High-purity Pd or Pd alloy is added with low-boiling element I, which has a boiling point lower than the melting point of these base materials and dissolves in Pd, and low-boiling element II, which does not dissolve in Pd. Content/25) + (Low boiling point element II
(content of low-boiling element I/5)) ≧1≧((content of low-boiling element I/
10,000)+(content of low boiling point element II/500)).
JP2146499A 1990-06-04 1990-06-04 Bonding wire for semiconductor element Pending JPH0438841A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2146499A JPH0438841A (en) 1990-06-04 1990-06-04 Bonding wire for semiconductor element
US07/708,204 US5298219A (en) 1990-06-04 1991-05-31 High purity gold bonding wire for semiconductor device
MYPI91000971A MY113367A (en) 1990-06-04 1991-06-03 Bonding wire for semiconductor device.
GB9111994A GB2245902B (en) 1990-06-04 1991-06-04 Bonding wire for semiconductor device
GB9401294A GB2273716B (en) 1990-06-04 1994-01-24 Bonding wire for semiconductor device
US08/453,999 US5538685A (en) 1990-06-04 1995-05-30 Palladium bonding wire for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2146499A JPH0438841A (en) 1990-06-04 1990-06-04 Bonding wire for semiconductor element

Publications (1)

Publication Number Publication Date
JPH0438841A true JPH0438841A (en) 1992-02-10

Family

ID=15409009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2146499A Pending JPH0438841A (en) 1990-06-04 1990-06-04 Bonding wire for semiconductor element

Country Status (1)

Country Link
JP (1) JPH0438841A (en)

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