JP3090548B2 - Bonding wire for semiconductor device - Google Patents

Bonding wire for semiconductor device

Info

Publication number
JP3090548B2
JP3090548B2 JP04262218A JP26221892A JP3090548B2 JP 3090548 B2 JP3090548 B2 JP 3090548B2 JP 04262218 A JP04262218 A JP 04262218A JP 26221892 A JP26221892 A JP 26221892A JP 3090548 B2 JP3090548 B2 JP 3090548B2
Authority
JP
Japan
Prior art keywords
added
wire
bonding
addition
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP04262218A
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Japanese (ja)
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JPH06112258A (en
Inventor
一光 板橋
毅 鯨岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
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Priority to JP04262218A priority Critical patent/JP3090548B2/en
Publication of JPH06112258A publication Critical patent/JPH06112258A/en
Application granted granted Critical
Publication of JP3090548B2 publication Critical patent/JP3090548B2/en
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Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45001—Core members of the connector
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    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01027—Cobalt [Co]
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  • Chemical & Material Sciences (AREA)
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  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は、半導体素子のチップ電
極と基板上の外部リードとを接続するために用いられる
半導体素子用ボンディングＡｕ線、特にワイヤボンディ
ング法及びバンプ接続法に好適なものに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device bonding Au wire used for connecting a chip electrode of a semiconductor device to an external lead on a substrate, and more particularly to a wire suitable for a wire bonding method and a bump connection method. .

【０００２】[0002]

【従来の技術】従来から、例えばキャピラリーの先端に
垂下せしめたＡｕ線の先端を電気トーチにより溶融させ
てボールを形成し、このボールをチップ上のＡｌ又はＡ
ｌ合金からなる電極に圧着・切断してバンプ電極を形成
するバンプ接続法や、前記ボールをチップ電極に圧着，
接合せしめた後、ループ状に外部リードまで導いて該外
部リードに圧着・切断することにより、チップ電極と外
部リードを接続させるワイヤボンディング法が知られて
いる。2. Description of the Related Art Heretofore, for example, a tip of an Au wire suspended at a tip of a capillary is melted by an electric torch to form a ball, and the ball is formed of Al or A on a chip.
a bump connection method in which a bump electrode is formed by pressing and cutting an electrode made of an alloy;
A wire bonding method is known in which a chip electrode and an external lead are connected by bonding, bonding, and then crimping and cutting the external lead to the external lead in a loop shape.

【０００３】また、この種ボンディングに用いるに有用
なＡｕ線として、特公昭６２−２３４５４号に開示され
るように、Ｐｔと、Ｂｅ，Ｃａ，Ｇｅの中から１種以上
とを添加してなるものがある。As an Au wire useful for this kind of bonding, Pt and one or more of Be, Ca, and Ge are added as disclosed in Japanese Patent Publication No. 23234/1987. There is something.

【０００４】[0004]

【発明が解決しようとする課題】上記従来のボンディン
グ線では、前記各元素の添加によってＡｕ線における強
度の向上は図れるものの、ボール形成時に熱影響を受け
て再結晶する領域が比較的長くなる結果、ボンディング
時におけるループ高さが高くなる。よって、近年におけ
るＬＳＩパッケージの小型，軽量化に伴う低ループ（例
えば１５０μｍ以下）の要求を満足し得るものではなか
った。In the above-mentioned conventional bonding wire, although the strength of the Au wire can be improved by the addition of each of the above-mentioned elements, the region to be recrystallized under the influence of heat at the time of ball formation becomes relatively long. Thus, the loop height during bonding increases. Therefore, it has not been possible to satisfy the demand for a low loop (for example, 150 μm or less) accompanying the recent reduction in size and weight of an LSI package.

【０００５】本発明はこのような従来事情に鑑みてなさ
れたものであり、その目的とするところは、Ｐｔの添加
によりＡｕ線の強度向上を図ると同時に、ループ高さを
低くできるＡｕ線を提供することにある。The present invention has been made in view of such circumstances, and an object of the present invention is to improve the strength of an Au wire by adding Pt, and at the same time, to reduce the loop height of an Au wire. To provide.

【０００６】[0006]

【課題を解決するための手段】以上の目的を達成するた
めに、本発明の半導体素子用ボンディング線は、高純度
Ａｕに、高純度Ｐｔを１〜３０wt％含有せしめると共
に、Ｓｃ，Ｙ，希土類元素の中から１種以上を０．００
０１〜０．０５wt％含有せしめてなることを特徴とす
る。In order to achieve the above object, a bonding wire for a semiconductor device according to the present invention comprises high-purity Au containing 1 to 30 wt% of high-purity Pt and Sc, Y, rare earth elements. 0.00 or more of one or more elements
It is characterized by containing from 0.01 to 0.05 wt%.

【０００７】また、後述の理由から、前記の配合に加え
て、Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆｅ，Ｃｏ，Ａｇの中か
ら１種以上を０．０００１〜０．０５wt％含有せしめる
ことが有用である。[0007] In addition to the above-mentioned composition, it is useful to contain at least one of Be, Ca, Ge, Ni, Fe, Co and Ag in an amount of 0.0001 to 0.05 wt% in addition to the above-mentioned composition. It is.

【０００８】[0008]

【作用】上記の構成によれば、Ｐｔの所定量の添加によ
ってＡｕ線の破断強度が向上すると同時に、Ｓｃ，Ｙ，
希土類元素の中から少なくとも１種を同時添加すること
でボール形成時の再結晶領域を短くでき、ボンディング
の際のループ高さが低くなる。According to the above structure, the breaking strength of the Au wire is improved by adding a predetermined amount of Pt, and at the same time, Sc, Y,
By simultaneously adding at least one of the rare earth elements, the recrystallized region during ball formation can be shortened, and the loop height during bonding can be reduced.

【０００９】また、Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆｅ，Ｃ
ｏ，Ａｇの同時添加によって、前記破断強度をさらに高
レベルなものにすると共に、ループ高さをより低くし得
る。Also, Be, Ca, Ge, Ni, Fe, C
By adding o and Ag simultaneously, the breaking strength can be further increased and the loop height can be further reduced.

【００１０】しかし乍ら、Ｐｔの添加量が１wt％未満で
は満足な破断強度が得られず、Ｐｔの添加量が３０wt％
を越えると伸線加工が困難になるので好ましくない。However, if the added amount of Pt is less than 1 wt%, a satisfactory breaking strength cannot be obtained, and the added amount of Pt is 30 wt%.
Exceeding this is not preferable because drawing becomes difficult.

【００１１】また、Ｓｃ，Ｙ，希土類元素の添加量が
０．０００１wt％未満だと前述の低ループ効果を得られ
ず、また、これら添加元素の添加量が０．０５wt％を越
えると、ボール形成時におけるボール形状が安定せず、
ボールとチップ電極との接合強度が低下してＡ点剥がれ
の発生率が高くなる。On the other hand, if the added amount of Sc, Y and rare earth elements is less than 0.0001 wt%, the above-described low loop effect cannot be obtained, and if the added amount of these added elements exceeds 0.05 wt%, the ball will not be obtained. The ball shape during formation is not stable,
The bonding strength between the ball and the chip electrode is reduced, and the occurrence rate of point A peeling increases.

【００１２】さらに、Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆｅ，
Ｃｏ，Ａｇの添加量が０．０００１wt％未満では上記の
効果を得られず、同添加量が０．０５wt％を越えるとボ
ール形成時におけるボール形状が安定せず、ボールとチ
ップ電極との接合強度が低下するので好ましくない。Further, Be, Ca, Ge, Ni, Fe,
If the added amount of Co and Ag is less than 0.0001% by weight, the above effect cannot be obtained. If the added amount exceeds 0.05% by weight, the shape of the ball at the time of ball formation is not stable, and the bonding between the ball and the chip electrode is not performed. It is not preferable because the strength is reduced.

【００１３】従って、Ｐｔの添加量を１〜３０wt％の範
囲に、Ｓｃ，Ｙ，希土類元素の添加量を０．０００１〜
０．０５wt％の範囲に、Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆ
ｅ，Ｃｏ，Ａｇの添加量を０．０００１〜０．０５wt％
の範囲に、夫々設定した。Therefore, the addition amount of Pt is in the range of 1 to 30 wt%, and the addition amount of Sc, Y, and rare earth element is 0.0001 to 0.001%.
Be, Ca, Ge, Ni, F
e, Co, Ag added amount of 0.0001-0.05wt%
Were set respectively in the range.

【００１４】[0014]

【実施例】以下、具体的な実施例と比較例について説明
する。高純度Ａｕ（９９．９９％以上）に、Ｐｔ，Ｓ
ｃ，Ｙ，Ｌａ，Ｃｅ、Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆｅ，
Ｃｏ，Ａｇを表１中に示す含有率に基づき添加して溶解
鋳造し、次に溝ロール加工を施し、その途中で焼なまし
処理を施した後に線引加工で線径２５μｍの母線に成形
し、更に十分な応力除去を行うことにより各試料とし
た。EXAMPLES Hereinafter, specific examples and comparative examples will be described. High purity Au (99.99% or more), Pt, S
c, Y, La, Ce, Be, Ca, Ge, Ni, Fe,
Co and Ag were added based on the contents shown in Table 1 and melted and cast, then subjected to groove roll processing, annealed in the middle, and formed into a bus bar having a wire diameter of 25 μm by wire drawing. Then, each sample was obtained by further sufficiently removing stress.

【００１５】表１中の試料Ｎｏ．１〜８は高純度Ａｕに
Ｐｔ（以下、添加元素Ｉという）を添加すると共に、Ｓ
ｃ，Ｙ，希土類元素（以下、添加元素IIという）の中か
ら少なくとも１種を添加した本発明実施品である。ま
た、試料Ｎｏ．９〜１２は、前記の配合に加えてさらに
Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆｅ，Ｃｏ，Ａｇ（以下、添
加元素III という）の中から少くとも１種を同時添加し
た本発明実施品である。Sample No. 1 in Table 1 Nos. 1 to 8 are obtained by adding Pt (hereinafter referred to as additive element I) to high-purity Au,
This is a product of the present invention in which at least one of c, Y, and rare earth elements (hereinafter, referred to as additive element II) is added. In addition, the sample No. Nos. 9 to 12 are products of the present invention in which at least one of Be, Ca, Ge, Ni, Fe, Co, and Ag (hereinafter, referred to as an additional element III) is simultaneously added in addition to the above composition. .

【００１６】また、表１中の試料Ｎｏ．１３，１４は高
純度ＡｕにＰｔのみを添加した比較品、試料Ｎｏ．１５
〜１８は高純度ＡｕにＰｔを添加すると共に、上記添加
元素III の代表としてＢｅ，Ｃａ，Ｇｅを選んで１種ま
たは２種添加し、添加元素IIを添加しない比較品、試料
ＮＯ．１９は高純度Ａｕに何も添加しない比較品であ
る。In Table 1, sample No. Samples Nos. 13 and 14 are comparative products in which only Pt is added to high-purity Au. Fifteen
Nos. 18 to 18 were obtained by adding Pt to high-purity Au, selecting Be, Ca, and Ge as representatives of the above-mentioned additional element III, adding one or two of them, and adding no additional element II. 19 is a comparative product in which nothing is added to high-purity Au.

【００１７】尚、表１では希土類元素の代表としてＬ
ａ，Ｃｅを選んだが、これ以外の希土類元素はＬａ，Ｃ
ｅと同質性のため省略した。In Table 1, L is a representative of the rare earth element.
a and Ce were selected, but the other rare earth elements were La and C
Omitted because of homogeneity with e.

【００１８】上記のようにして作製した各試料を熱処理
により所定の伸び率に合わせた後、破断強度及びループ
高さを測定した。After adjusting each of the samples prepared as described above to a predetermined elongation by heat treatment, the breaking strength and the loop height were measured.

【００１９】破断強度は、各試料を標点間距離１００ｍ
ｍにて引張速度１０ｍｍ／ｍｉｎで引張り試験を行った
時の破断荷重を測定した。The breaking strength was determined by measuring the distance between the gauges of each sample to 100 m.
The breaking load at the time of conducting a tensile test at a tensile speed of 10 mm / min at m was measured.

【００２０】ループ高さは、各試料をＡｌ薄膜（０．８
μｍ厚）のチップ電極上に所定条件にてボンディングし
た後、測定顕微鏡にて測定した。これらの結果も表１中
に示す。The loop height was determined using an Al thin film (0.8
After bonding under predetermined conditions on a chip electrode (thickness of μm), measurement was performed with a measuring microscope. These results are also shown in Table 1.

【００２１】[0021]

【表１】 [Table 1]

【００２２】而して、試料Ｎｏ．１〜８の測定結果か
ら、高純度Ａｕに添加元素Ｉ（Ｐｔ）を１〜３０wt％の
範囲内で添加すると共に、添加元素II（Ｓｃ，Ｙ，希土
類元素）の中から夫々少なくとも１種を同時添加すれ
ば、破断強度の改善が得られると同時に、ループ高さを
低くできることが確認できた。The sample No. From the measurement results of 1 to 8, the addition element I (Pt) was added to the high-purity Au in the range of 1 to 30 wt%, and at least one of each of the addition elements II (Sc, Y, rare earth element) was added. It was confirmed that the simultaneous addition can improve the breaking strength and at the same time reduce the loop height.

【００２３】また、試料Ｎｏ．９〜１２の測定結果か
ら、上記の配合に加えて添加元素III（Ｂｅ，Ｃａ，Ｇ
ｅ，Ｎｉ，Ｆｅ，Ｃｏ，Ａｇ）の中から夫々少なくとも
１種を同時添加すれば、より高レベルな破断強度が得ら
れると同時に、ループ高さをさらに低くできることが確
認できた。The sample No. From the measurement results of Nos. 9 to 12, in addition to the above composition, the additive element III (Be, Ca, G
e, Ni, Fe, Co, and Ag), it was confirmed that a higher level of breaking strength could be obtained and the loop height could be further reduced by adding at least one of each of them at the same time.

【００２４】また、試料Ｎｏ．１３，１４の測定結果、
並びに試料Ｎｏ．１５〜１８の測定結果から、Ｐｔのみ
の添加、若しくはＰｔと添加元素III の添加では、所定
の破断強度は得られるものの、ループ高さが高くなるこ
とが確認できた。さらに、試料Ｎｏ．１９の測定結果か
ら、Ｐｔの添加がない場合は所定の破断強度が得られな
いと共に、ループ高さが極めて高いことが確認できた。The sample No. 13, 14 measurement results,
And sample no. From the measurement results of Nos. 15 to 18, it was confirmed that the addition of Pt alone or the addition of Pt and the additional element III provided a predetermined breaking strength but increased the loop height. Further, the sample No. From the measurement results of No. 19, it was confirmed that when Pt was not added, a predetermined breaking strength could not be obtained and the loop height was extremely high.

【００２５】[0025]

【発明の効果】本発明に係る半導体素子用ボンディング
線は以上説明したように構成したので、Ｐｔの添加によ
る破断強度の向上効果はそのまま維持しつつ、その添加
量を所定の範囲内に限定すると共にＳｃ，Ｙ，希土類元
素を同時添加することで、ボンディング時におけるルー
プ高さを低くし得た。Since the bonding wire for a semiconductor device according to the present invention is constructed as described above, the amount of Pt added is limited to a predetermined range while maintaining the effect of improving the breaking strength by adding Pt. At the same time, by adding Sc, Y and rare earth elements simultaneously, the loop height at the time of bonding could be reduced.

【００２６】従って、ボンディング後における所定のワ
イヤ強度を得ると同時に低ループ化を実現して、ＬＳＩ
パッケージの小型，軽量化に対応するに極めて有用な半
導体素子用ボンディング線を提供できた。Therefore, it is possible to obtain a predetermined wire strength after bonding and at the same time to realize a low loop, and
A semiconductor element bonding wire that is extremely useful for reducing the size and weight of the package can be provided.

【００２７】さらに、Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆｅ，
Ｃｏ，Ａｇを所定量添加することで、より高レベルな破
断強度を得ると共に、低ループ化をさらに促進すること
ができた。Further, Be, Ca, Ge, Ni, Fe,
By adding predetermined amounts of Co and Ag, a higher level of breaking strength was obtained, and further reduction in loop was able to be promoted.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭56−49534（ＪＰ，Ａ) 特開 昭63−145729（ＪＰ，Ａ) 特開 平４−79241（ＪＰ，Ａ) 特開 平２−288348（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 301 ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-56-49534 (JP, A) JP-A-63-145729 (JP, A) JP-A-4-79241 (JP, A) JP-A-2- 288348 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) H01L 21/60 301

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 高純度Ａｕに、高純度Ｐｔを１〜３０wt
％含有せしめると共に、Ｓｃ，Ｙ，希土類元素の中から
１種以上を、０．０００１〜０．０５wt％含有せしめて
なる半導体素子用ボンディング線。1. High purity Pt is added to high purity Au in an amount of 1 to 30 wt.
%, And at least one of Sc, Y, and rare earth elements is contained at 0.0001 to 0.05 wt%. 【請求項２】 高純度Ａｕに、高純度Ｐｔを１〜３０wt
％含有せしめると共に、Ｓｃ，Ｙ，希土類元素の中から
１種以上を、０．０００１〜０．０５wt％含有せしめ、
且つ、Ｂｅ，Ｃａ，Ｇｅ，Ｎｉ，Ｆｅ，Ｃｏ，Ａｇの中
から１種以上を０．０００１〜０．０５wt％含有せしめ
てなる半導体素子用ボンディング線。2. High purity Pt is added to high purity Au in an amount of 1 to 30 wt.
%, And at least one of Sc, Y, and rare earth elements is contained at 0.0001 to 0.05 wt%.
In addition, a bonding wire for a semiconductor element containing 0.0001 to 0.05 wt% of one or more of Be, Ca, Ge, Ni, Fe, Co and Ag.
JP04262218A 1992-09-30 1992-09-30 Bonding wire for semiconductor device Expired - Lifetime JP3090548B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04262218A JP3090548B2 (en) 1992-09-30 1992-09-30 Bonding wire for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04262218A JP3090548B2 (en) 1992-09-30 1992-09-30 Bonding wire for semiconductor device

Publications (2)

Publication Number Publication Date
JPH06112258A JPH06112258A (en) 1994-04-22
JP3090548B2 true JP3090548B2 (en) 2000-09-25

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ID=17372724

Family Applications (1)

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Country Link
JP (1) JP3090548B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100273702B1 (en) * 1995-08-23 2000-11-15 사토 케이지 Process for preparing gold alloy wire for bonding
JP3367544B2 (en) * 1995-08-23 2003-01-14 田中電子工業株式会社 Gold alloy fine wire for bonding and method of manufacturing the same
US5945065A (en) * 1996-07-31 1999-08-31 Tanaka Denshi Kogyo Method for wedge bonding using a gold alloy wire
DE19821395C2 (en) 1998-05-13 2000-06-29 Heraeus Gmbh W C Use of a fine wire made of a nickel-containing gold alloy
JP5010495B2 (en) * 2007-02-06 2012-08-29 新日鉄マテリアルズ株式会社 Gold wire for semiconductor element connection
JP5582484B1 (en) 2013-12-20 2014-09-03 田中貴金属工業株式会社 Medical alloy and method for producing the same

Also Published As

Publication number Publication date
JPH06112258A (en) 1994-04-22

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